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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) > Heterojunction

Heterojunction

Heterojunction patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/24/14 - 20140110662 - Graphene-based composite structure and method for making the same
A graphene-based composite structure is disclosed. The graphene-based composite structure includes a graphene layer, a transition metal layer, and a substrate. The graphene layer, transition metal layer, and substrate are stacked together in series to form a sandwich structure. The graphene layer and the transition metal layer are coupled by...

03/27/14 - 20140084239 - Non-planar semiconductor device having channel region with low band-gap cladding layer
Non-planar semiconductor devices having channel regions with low band-gap cladding layers are described. For example, a semiconductor device includes a vertical arrangement of a plurality of nanowires disposed above a substrate. Each nanowire includes an inner region having a first band gap and an outer cladding layer surrounding the inner...

03/20/14 - 20140077151 - Optoelectric device with semiconductor microwires or nanowires and method for manufacturing the same
An optoelectric device including microwires or nanowires on a support, each microwire or nanowire including at least one portion mainly containing a III-V compound in contact with the support, wherein the III-V compound is based on a first group-V element and on a second group-III element, wherein a surface of...

02/20/14 - 20140048765 - Semiconductor device and method for manufacturing the same
The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that the source...

11/21/13 - 20130306934 - Biosensor comprising reduced graphene oxide layer
The present invention relates to a horizontal biosensor, comprising a reduced graphene oxide layer formed on a substrate; a molecular linker formed on the reduced graphene oxide layer; and a metal nanoparticle layer formed on the molecular linker....

10/03/13 - 20130256628 - Epitaxial structure
An epitaxial structure is provided. The epitaxial structure comprises a substrate, a carbon nanotube layer and an epitaxial layer stacked in that order. The substrate has an epitaxial growth surface and defines a plurality of first grooves and first bulges on the epitaxial growth surface. The carbon nanotube layer covers...

07/18/13 - 20130181185 - Tunneling field effect transistor and method for fabricating the same
A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer,...

06/06/13 - 20130140518 - Quantum dot gate fets and circuits configured as biosensors and gene sequencers
Quantum dot (QD) gate FETs and the use of quantum dot (QD) gate FETs for the purpose of sensing analytes and proteins is disclosed and described. Analytes, proteins, miRNAs, and DNAs functionalized to the QDs change the charge density in the gate and hence the current-voltage characteristics. In one embodiment,...

10/25/12 - 20120267605 - Methods for the production of nanoscale heterostructures
The present invention is directed to a novel synthetic method for producing nanoscale heterostructures, and particularly nanoscale heterostructure particles, rods and sheets, that comprise a metal core and a monocrystalline semiconductor shell with substantial lattice mismatches between them. More specifically, the invention concerns the use of controlled soft acid-base coordination...

10/11/12 - 20120256160 - Piezo-phototronic effect devices
A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying...

10/04/12 - 20120248403 - Layer assembly
The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one...

09/27/12 - 20120241717 - Organic photosensitive optoelectronic devices
A photosensitive optoelectronic device (1) comprises a plurality of organic semiconductor sub-cells (10, 11, 12, 13) arranged in a stack between electrodes (3, 5), each sub-cell comprising donor material (14, 16, 23, 25) and acceptor material (15, 17, 24, 26) providing a heterojunction. There is a recombination layer (19, 22,...

07/12/12 - 20120175584 - Structures for radiation detection and energy conversion using quantum dots
Inorganic semiconducting materials such as silicon are used as a host matrix in which quantum dots reside to provide a radiation detector or energy converter. The quantum dot material may be disposed by incorporating materials sensitive to neutron detection such as boron-containing compounds, or the use of methods such as...

07/12/12 - 20120175585 - Cage nanostructures and prepartion thereof
A unique family of nanoparticles characterized by their nanometric size and cage-like shapes (hollow structures), capable of holding in their hollow cavity a variety of materials is disclosed herein....

05/24/12 - 20120126200 - Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part...

04/26/12 - 20120097917 - Aligned, coated nanowire arrays for gas sensing
Aligned nanowire arrays were coated with semiconductor shell layers, and optionally with noble metal nanoparticles for use as three dimensional gas sensors. The sensors show room-temperature responses to low concentrations of various gases. Arrays containing different sensor types can discriminate among different gases, based upon changes in conductivity and response...

03/01/12 - 20120049150 - Semiconductor device, manufacturing method therefor, and solar cell
A semiconductor device includes: a silicon layer (12); an intermediate silicide layer (28) that is provided on the silicon layer (12), has openings, and includes barium silicide; and an upper silicide layer (14) that covers the intermediate silicide layer (28), is positioned to be in contact with the silicon layer...

11/10/11 - 20110272665 - Nitride semiconductor device
LC1<LC2<LC3  (1)...

09/15/11 - 20110220865 - Transistor and manufacturing method thereof
According to an embodiment of the present invention, a transistor includes a source electrode, a drain electrode, a graphene film formed between the source electrode and the drain electrode and having a first region and a second region, and a gate electrode formed on the first region and the second...

08/11/11 - 20110193055 - Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them
Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part...

12/10/09 - 20090302306 - Nano electronic device and fabricating method of the same
Disclosed herein are a nano electronic device and a method of fabricating the same. The nano electronic device includes a ferroelectric nano-structure and a semiconducting nano-wire. Polarization formed on the ferroelectric nano-structure is utilized....

07/30/09 - 20090189143 - Nanotube array electronic and opto-electronic devices
Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The discussed electronic and photonic devices and circuits rely on the nanotube arrays grown on a variety of substrates, such as glass or Si wafer. The planar, multiple layer deposition technique and simple methods of change of the nanotube...

07/30/09 - 20090189144 - Device for absorbing or emitting light and methods of making the same
A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of...

07/16/09 - 20090179189 - Method for producing an electronic device with a layer structure and an electronic device
The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and...

04/02/09 - 20090085026 - Structure and method for manipulating spin quantum state through dipole polarization switching
Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in a hybrid double quantum disk structure, composed of a diluted magnetic semiconductor and a ferroelectric compound semiconductor, is...