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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device)

Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device)

Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

07/31/14 - 20140209854 - Nanowire capacitor for bidirectional operation
A method of fabricating an electronic device includes the following steps. At least one first set and at least one second set of nanowires and pads are etched in an SOI layer of an SOI wafer. A first gate stack is formed that surrounds at least a portion of each...

07/31/14 - 20140209855 - Nanowire structures having wrap-around contacts
Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of...

07/24/14 - 20140203238 - Wire-last integration method and structure for iii-v nanowire devices
In one aspect, a method of fabricating a nanowire FET device includes the following steps. A layer of III-V semiconductor material is formed on an SOI layer of an SOI wafer. Fins are etched into the III-V material and SOI layer. One or more dummy gates are formed over a...

07/17/14 - 20140197370 - Overlap capacitance nanowire
A device and method for fabricating a nanowire include patterning a first set of structures on a substrate. A dummy structure is formed over portions of the substrate and the first set of structures. Exposed portions of the substrate are etched to provide an unetched raised portion. First spacers are...

07/17/14 - 20140197371 - Overlap capacitance nanowire
A device and method for fabricating a nanowire include patterning a first set of structures on a substrate. A dummy structure is formed over portions of the substrate and the first set of structures. Exposed portions of the substrate are etched to provide an unetched raised portion. First spacers are...

07/10/14 - 20140191185 - Apparatus and method for fabricating nano resonator using laser interference lithography
A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern....

07/10/14 - 20140191186 - Regenerative nanosensor devices
The present invention provides a regenerative nanosensor device for the detection of one or more analytes of interest. In certain embodiments, the device comprises a nanostructure having a reversible functionalized coating comprising a supramolecular assembly. Controllable and selective disruption of the assembly promotes desorption of at least part of the...

07/03/14 - 20140183441 - Apparatus for generating/detecting terahertz wave using graphene and manufacturing method of the same
Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate;...

06/26/14 - 20140175372 - Recessed contact to semiconductor nanowires
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor...

06/26/14 - 20140175373 - Topological insulator structure
A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0<x<1, 0<y<2. Values of x and y satisfies that an amount...

06/26/14 - 20140175374 - Hybrid cmos nanowire mesh device and finfet device
A semiconductor hybrid structure on an SOI substrate. A first portion of the SOI substrate containing a nanowire mesh device and a second portion of the SOI substrate containing a FINFET device. The nanowire mesh device including stacked and spaced apart semiconductor nanowires located on the substrate, each semiconductor nanowire...

06/26/14 - 20140175375 - Hybrid cmos nanowire mesh device and pdsoi device
A semiconductor hybrid structure on an SOI substrate. A first portion of the SOI substrate contains a nanowire mesh device and a second portion of the SOI substrate contains a partially depleted semiconductor on insulator (PDSOI) device. The nanowire mesh device includes stacked and spaced apart semiconductor nanowires located on...

06/05/14 - 20140151630 - Protection for the epitaxial structure of metal devices
Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased...

06/05/14 - 20140151631 - Asymmetric bottom contacted device
The invention provides a Bottom Contacted 2D-layer Device (BCD) for the determination of graphene doping and chemical sensing. The device can be made by transfer of high quality CVD grown graphene films onto n- or p-doped silicon substrates yielding Schottky barrier diodes. Exposure to liquids and gases change the charge...

05/29/14 - 20140145143 - Carbon nanotube transistor voltage converter circuit
A voltage converter circuit includes one or more single-walled carbon nanotube transistors, capable of handling relatively high amounts of current. The transistors are formed using a porous structure which has a number of single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another porous material. The circuit...

05/22/14 - 20140138610 - Magnetic domain wall shift register memory device readout
A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires....

05/22/14 - 20140138611 - In nanowire, device using the same and method of manufacturing in nanowire
There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through...

05/22/14 - 20140138612 - Fullerene-doped nanostructures and methods therefor
Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase...

03/27/14 - 20140084238 - Nano-patterned substrate and epitaxial structure cross-reference to related application
A nano-patterned substrate includes a substrate and a plurality of nano-structures. The substrate has an upper surface and each of the plurality of nano-structures comprises a semiconductor buffer region and a buffer region formed on the upper surface of the substrate, wherein one of the pluralities of nano-structures has a...

03/06/14 - 20140061582 - Suspended nanowire structure
A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the...

03/06/14 - 20140061583 - Silicon nanotube mosfet
A nanotubular MOSFET device extends a scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner and outer gate separated from each other by a tubular shaped epitaxially grown silicon layer, and a source and drain respectively separated...

02/27/14 - 20140054540 - Device including semiconductor nanocrystals & method
A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode...

02/20/14 - 20140048764 - Sub-10 nm graphene nanoribbon lattices
A graphene lattice comprising an ordered array of graphene nanoribbons is provided in which each graphene nanoribbon in the ordered array has a width that is less than 10 nm. The graphene lattice including the ordered array of graphene nanoribbons is formed by utilizing a layer of porous anodized alumina...

02/13/14 - 20140042385 - Contacts-first self-aligned carbon nanotube transistor with gate-all-around
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first...

02/13/14 - 20140042386 - Nanowire structures having non-discrete source and drain regions
Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires....

02/06/14 - 20140034899 - Graphene semiconductor and electrical device including the same
A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene....

01/30/14 - 20140027708 - Photonic integrated circuits based on quantum cascade structures
Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region...

01/09/14 - 20140008604 - Super-long semiconductor nano-wire structure and method of making
The present invention disclosure provides a super-long semiconductor nanowire structure. The super-long semiconductor nanowire structure is intermittently widened to prevent fractures in the super-long semiconductor nanowire structure. At the same time, the present invention further provides a method of making a super-long semiconductor nanowire structure. The method forms an intermittently...

01/09/14 - 20140008605 - Method for dispersing quantum dots or quantum wires in zeolite, method for stabilizing quantum dots or quantum wires in zeolite, and zeolite containing quantum dots or quantum wires dispersed by the method
The present application relates to a method for dispersing quantum dots (QDs) or quantum wires in zeolite, to zeolite containing quantum dots or quantum wires dispersed by the method, and to a method for stabilizing quantum dots or quantum wires in zeolite....

01/09/14 - 20140008606 - Cylindrical-shaped nanotube field effect transistor
A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a...

01/02/14 - 20140001432 - Applications for nanopillar structures
A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask....

01/02/14 - 20140001433 - Methods for passivating a carbonic nanolayer
Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a...

12/05/13 - 20130320293 - Semiconductor light emitting device package and method of manufacturing the same
A semiconductor light emitting device package includes a base unit including a main body having electrical insulation properties and at least one pair of first and second through electrodes formed in the main body in a thickness direction thereof and formed of a semiconductor material, and a light emitting structure...

12/05/13 - 20130320294 - Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor...

11/28/13 - 20130313512 - Graphene electronic device and method of fabricating the same
A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption...

11/28/13 - 20130313513 - Semiconductor devices having modulated nanowire counts
Semiconductor devices having modulated nanowire counts and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a plurality of nanowires disposed above a substrate and stacked in a first vertical plane with a first uppermost nanowire. A second semiconductor device has...

11/14/13 - 20130299771 - Semiconductor device including transistor
A semiconductor device has a semiconductor body including a source region, a channel region, and a drain region, which are sequentially arranged in a longitudinal direction and are doped with the same type of impurity, a gate electrode including metal, and a gate dielectric layer interposed between the semiconductor body...

11/14/13 - 20130299772 - Heavily doped semiconductor nanoparticles
Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding...

10/31/13 - 20130285007 - Silicon nanocrystal inks, films, and methods
Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for...

10/31/13 - 20130285008 - Nanowires, method of fabrication the same and uses thereof
A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid...

10/17/13 - 20130270511 - Graphene pressure sensors
Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the...

10/17/13 - 20130270512 - Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture
Architectures and techniques for co-integration of heterogeneous materials, such as group III-V semiconductor materials and group IV semiconductors (e.g., Ge) on a same substrate (e.g. silicon). In embodiments, multi-layer heterogeneous semiconductor material stacks having alternating nanowire and sacrificial layers are employed to release nanowires and permit formation of a coaxial...

10/17/13 - 20130270513 - Electropositive metal containing layers for semiconductor applications
Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the...

10/03/13 - 20130256627 - Sensors incorporating freestanding carbon nanostructures
Sensors for detecting IR radiation, UV radiation, X-Rays, light, gas, and chemicals. The sensors herein incorporate freestanding carbon nanostructures, such as single-walled carbon nanotubes (“SWCNT”), atomically thin carbon sheets having a thickness of about between 1 atom and about 5 atoms (“graphene”), and combinations thereof. The freestanding carbon nanostructures are...

09/19/13 - 20130240828 - Semiconductor device and method of manufacturing the same
A semiconductor device according to embodiments includes a semiconductor substrate, a buried insulating layer which is formed on the semiconductor substrate, a semiconductor layer which is formed on the buried insulating layer and includes a narrow portion and two wide portions which are larger than the narrow portion in width...

09/19/13 - 20130240829 - Quantum dot structure, method for forming quantum dot structure, wavelength conversion element, light-light conversion device, and photoelectric conversion device
This quantum dot structure has a matrix layer and a plurality of crystalline quantum dots provided spaced within the matrix layer. The quantum dots are provided at positions that differ in the direction of thickness of the matrix layer....

09/19/13 - 20130240830 - Direct and sequential formation of monolayers of boron nitride and graphene on substrates
The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be...

09/12/13 - 20130234105 - Bond type flip-chip light-emitting structure and method of manufacturing the same
A bond type flip-chip light-emitting structure and method of manufacturing the same. Firstly, form a positive electrode and a negative electrode on an epitaxy layer. Next, deposit an insulation layer on parts of the positive electrode and negative electrode, to expose respectively a positive electrode via hole and a negative...

08/29/13 - 20130221319 - Gate-all around semiconductor nanowire fet's on bulk semicoductor wafers
Non-planar semiconductor devices are provided that include at least one semiconductor nanowire suspended above a semiconductor oxide layer that is present on a first portion of a bulk semiconductor substrate. An end segment of the at least one semiconductor nanowire is attached to a first semiconductor pad region and another...

08/29/13 - 20130221320 - Led with embedded doped current blocking layer
The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a...

08/22/13 - 20130214242 - Integrated circuitry components, switches, and memory cells
A switch includes a graphene structure extending longitudinally between a pair of electrodes and being conductively connected to both electrodes of said pair. First and second electrically conductive structures are laterally outward of the graphene structure and on opposing sides of the graphene structure from one another. Ferroelectric material is...

08/22/13 - 20130214243 - Nanowires made of novel precursors and method for the production thereof
The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or...