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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device)Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/01/07 - 20070252131 - Method of interconnect formation using focused beams A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a ... 11/01/07 - 20070252130 - Transistor with tunneling dust electrode A transistor-like electronic device operates somewhat as a triode vacuum tube. Two electrodes (source and drain) sandwich an intermediate layer of organic semiconductor material in which fine metallic particles are dispersed. Due to the fineness and number of the particles, they are close enough to each other that electrons can ... 10/11/07 - 20070235714 - Nanowire composite and preparation method thereof A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed ... 09/13/07 - 20070210298 - Device and method for manipulating direction of motion of current carriers A device and method for manipulating a direction of motion of current carriers are presented. The device comprises a structure containing a two-dimensional gas of current carriers configured to define at least one region of inhomogeneity which is characterized by a substantially varying value of at least one parameter from ... 07/26/07 - 20070170414 - Field emission devices using modified carbon nanotubes The present invention relates to a field emission device comprising an anode and a cathode, wherein said cathode includes carbon nanotubes nanotubes which have been subjected to energy, plasma, chemical, or mechanical treatment. The present invention also relates to a field emission cathode comprising carbon nanotubes which have been subject ... 06/28/07 - 20070145347 - Coupled quantum well devices (cqwd) containing two or more direct selective contacts and methods of making same The present invention relates to a device structure that contains two or more conducting layers, two peripheral insulating layers, one or more intermediate insulating layers, and two or more conductive contacts. The two or more conducting layers are sandwiched between the two peripheral insulating layers, and they are spaced apart ... 06/21/07 - 20070138459 - Ternary oxide nanostructures and methods of making same A single crystalline ternary nanostructure having the formula AxByOz, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, ... 06/07/07 - 20070125995 - Horizontal emitting, vertical emitting, beam shaped, distributed feedback (dfb) lasers fabricated by growth over a patterned substrate with multiple overgrowth A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and ... 05/17/07 - 20070108435 - Method of making nanowires A novel technique for manufacturing nanostructures and nanostructure is disclosed. The invention exploits techniques to deposit a second semiconductor material on a first semiconductor material with incomplete coverage of the second layer, and forming the nanostructures by filling the holes in the second semiconductor layer with a third semiconductor material. ... 05/17/07 - 20070108434 - Quantum dot based pressure switch A semiconductor heterostructure based pressure switch comprising: first and second small bandgap material regions separated by a larger bandgap material region; a third small bandgap material region within the region of larger bandgap material, the third material region and larger bandgap material region defining at least one quantum dot; and, ... 04/19/07 - 20070085069 - Method and apparatus for manufacturing ic chip packaged device A film substrate that has antenna circuits formed at a fixed spacing on one surface thereof is transported at a constant speed, and IC chips are moved along the film substrate, and are mounted at the fixed spacing on the film substrate so as to be connected to the antenna ... 03/15/07 - 20070057245 - Artificial band gap A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the ... 01/18/07 - 20070012907 - Doped semiconductor nanocrystal layers and preparation thereof The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent ... 11/09/06 - 20060249726 - Semiconductor devices including nano tubes and methods of operating and fabricating the same Nano semiconductor switch devices are provided that include a semiconductor substrate and a conductive layer on the semiconductor substrate. A first insulating layer is provided on the conductive layer and the semiconductor substrate. The first insulating layer defines a contact hole that exposes at least a portion of the conductive ... 11/02/06 - 20060243957 - Binary signal converters for distinguishing direct signals carried by nanowires Various embodiments of the present invention are directed to a binary signal converter that facilitates distinguishing an original direct signal on a nanowire by superimposing an alternating signal on the original direct signal. The binary signal converter includes an alternating signal source connected to the nanowire that superimposes an alternating ... 10/26/06 - 20060237708 - Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, ... 08/24/06 - 20060186396 - Optical element and method for manufacturing the same An optical element has: an emission section including a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer and a second semiconductor layer of a second conductivity type formed above the active layer; an interlayer dielectric layer; and an electrostatic breakdown prevention ... 08/24/06 - 20060186395 - Thin-film capacitative element and electronic circuit and electronic equipment including the same A thin film capacitive element according to the present invention includes between a first electrode layer and a second electrode layer a dielectric layer formed of a dielectric material containing a bismuth layer structured compound having a composition represented by the stoichiometric compositional formula: (Bi2O2)2+(Am−1BmO3m+1)2− but containing bismuth (Bi) in ... 07/13/06 - 20060151773 - Solid-state imager and method for manufacturing same A solid-state imager is disclosed wherein isolation regions (4) are covered with power supply lines (8), a light-transmitting lens film (24) whose surface forms continuous convex portions above the isolation regions (4) convex towards channel regions (5) is provided, and a light-transmitting material having a refractive index lower than that ... 05/25/06 - 20060108572 - Stacked module systems and methods The present invention provides methods for constructing stacked circuit modules and precursor assemblies with flexible circuitry. Using the methods of the present invention, a single set of flexible circuitry whether articulated as one or two flex circuits may be employed with CSP devices of a variety of configurations either with ... 05/11/06 - 20060097241 - Novel class of superlattice materials and superlattice precursors, and method for their manufacture and use The present disclosure concerns novel materials comprising at least two crystalline materials. In certain embodiments, at least one of the crystalline materials is a diffusion barrier, and at least one material has a high power factor. The disclosed materials are particularly useful as superlattices, particularly thermoelectric superlattices, and superlattice precursors. ... 05/04/06 - 20060091376 - Semiconductor light-emitting device with improved light extraction efficiency The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while ... 05/04/06 - 20060091375 - Systems and methods for quantum braiding Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice according to at least one predefined rule, identifying a second quantum state of the ... 01/19/06 - 20060011903 - Nitride based semiconductor light-emitting device The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAlyGa1-x-yN (0<x<1, 0≦y≦0.2), wherein a threshold mode gain of each of the at ... 12/22/05 - 20050279988 - Nanotube-based transfer devices and related circuits Nanotube transfer devices controllably form a nanotube-based electrically conductive channel between a first node and a second node under the control of a control structure. A control structure induces a nanotube channel element to deflect so as to form and unform the conductive channel between the nodes. The nanotube channel ... 12/22/05 - 20050279987 - Nanostructure sensor device with polymer recognition layer A nanostructure device is made up of a nanostructure, such as a single-walled carbon nanotube, spanning two electrical conductors, mounted on a substrate. A passivation layer may cover a portion of the conductors and the nanostructure. A thin polymer layer is deposited over an exposed portion of the nanotube. In ... 12/15/05 - 20050274942 - Nanoscale programmable structures and methods of forming and using same A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms within or on the ion conductor and between the electrodes. ... 12/15/05 - 20050274941 - Semiconductor quantum well devices and methods of making the same Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved heavy-hole and light-hole valance band quantum wells. Each of the quantum wells includes a quantum well layer interposed between barrier layers. One ... 11/10/05 - 20050247923 - Semiconductor nano-structure and method of forming the same A semiconductor nano structure having a germanium structure and a germanium nano structure formed on a surface of germanium structure is provided. In addition, a method of forming the semiconductor nano structure on a semiconductor structure by illumination of a pulse laser is provided. The pulse laser has pulse illumination ... 10/13/05 - 20050224779 - Large scale patterned growth of aligned one-dimensional nanostructures A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect ... 07/28/05 - 20050161659 - Nanowire and electronic device The nanowire (10) comprises a first region (1), a second region (2), and a third region (3), wherein the diameter (c) of the second region (2) is greater than the diameters (a) of the first and the third region (1, 3), therewith interrupting at least partially the quantization of the ... 07/21/05 - 20050156151 - Light-receiving assembly This invention relates to a light-receiving module in which transmission impedance of lead terminals are, matched by simple method. The module has a semiconductor light-receiving device, such as a photo diode, a plurality of lead terminals for transmitting an electrical signal converted by the semiconductor device, and a metal base ... ### FreshPatents.com Support |