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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device)

Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device)

Thin Active Physical Layer Which Is (1) An Active Potential Well Layer Thin Enough To Establish Discrete Quantum Energy Levels Or (2) An Active Barrier Layer Thin Enough To Permit Quantum Mechanical Tunneling Or (3) An Active Layer Thin Enough To Permit Carrier Transmission With Substantially No Scattering (e.g., Superlattice Quantum Well, Or Ballistic Transport Device) patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

03/27/14 - 20140084238 - Nano-patterned substrate and epitaxial structure cross-reference to related application
A nano-patterned substrate includes a substrate and a plurality of nano-structures. The substrate has an upper surface and each of the plurality of nano-structures comprises a semiconductor buffer region and a buffer region formed on the upper surface of the substrate, wherein one of the pluralities of nano-structures has a...

03/06/14 - 20140061582 - Suspended nanowire structure
A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the...

03/06/14 - 20140061583 - Silicon nanotube mosfet
A nanotubular MOSFET device extends a scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner and outer gate separated from each other by a tubular shaped epitaxially grown silicon layer, and a source and drain respectively separated...

02/27/14 - 20140054540 - Device including semiconductor nanocrystals & method
A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode...

02/20/14 - 20140048764 - Sub-10 nm graphene nanoribbon lattices
A graphene lattice comprising an ordered array of graphene nanoribbons is provided in which each graphene nanoribbon in the ordered array has a width that is less than 10 nm. The graphene lattice including the ordered array of graphene nanoribbons is formed by utilizing a layer of porous anodized alumina...

02/13/14 - 20140042385 - Contacts-first self-aligned carbon nanotube transistor with gate-all-around
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first...

02/13/14 - 20140042386 - Nanowire structures having non-discrete source and drain regions
Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires....

02/06/14 - 20140034899 - Graphene semiconductor and electrical device including the same
A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene....

01/30/14 - 20140027708 - Photonic integrated circuits based on quantum cascade structures
Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region...

01/09/14 - 20140008604 - Super-long semiconductor nano-wire structure and method of making
The present invention disclosure provides a super-long semiconductor nanowire structure. The super-long semiconductor nanowire structure is intermittently widened to prevent fractures in the super-long semiconductor nanowire structure. At the same time, the present invention further provides a method of making a super-long semiconductor nanowire structure. The method forms an intermittently...

01/09/14 - 20140008605 - Method for dispersing quantum dots or quantum wires in zeolite, method for stabilizing quantum dots or quantum wires in zeolite, and zeolite containing quantum dots or quantum wires dispersed by the method
The present application relates to a method for dispersing quantum dots (QDs) or quantum wires in zeolite, to zeolite containing quantum dots or quantum wires dispersed by the method, and to a method for stabilizing quantum dots or quantum wires in zeolite....

01/09/14 - 20140008606 - Cylindrical-shaped nanotube field effect transistor
A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a...

01/02/14 - 20140001432 - Applications for nanopillar structures
A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask....

01/02/14 - 20140001433 - Methods for passivating a carbonic nanolayer
Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a...

12/05/13 - 20130320293 - Semiconductor light emitting device package and method of manufacturing the same
A semiconductor light emitting device package includes a base unit including a main body having electrical insulation properties and at least one pair of first and second through electrodes formed in the main body in a thickness direction thereof and formed of a semiconductor material, and a light emitting structure...

12/05/13 - 20130320294 - Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor...

11/28/13 - 20130313512 - Graphene electronic device and method of fabricating the same
A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption...

11/28/13 - 20130313513 - Semiconductor devices having modulated nanowire counts
Semiconductor devices having modulated nanowire counts and methods to form such devices are described. For example, a semiconductor structure includes a first semiconductor device having a plurality of nanowires disposed above a substrate and stacked in a first vertical plane with a first uppermost nanowire. A second semiconductor device has...

11/14/13 - 20130299771 - Semiconductor device including transistor
A semiconductor device has a semiconductor body including a source region, a channel region, and a drain region, which are sequentially arranged in a longitudinal direction and are doped with the same type of impurity, a gate electrode including metal, and a gate dielectric layer interposed between the semiconductor body...

11/14/13 - 20130299772 - Heavily doped semiconductor nanoparticles
Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding...

10/31/13 - 20130285007 - Silicon nanocrystal inks, films, and methods
Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for...

10/31/13 - 20130285008 - Nanowires, method of fabrication the same and uses thereof
A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid...

10/17/13 - 20130270511 - Graphene pressure sensors
Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the...

10/17/13 - 20130270512 - Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture
Architectures and techniques for co-integration of heterogeneous materials, such as group III-V semiconductor materials and group IV semiconductors (e.g., Ge) on a same substrate (e.g. silicon). In embodiments, multi-layer heterogeneous semiconductor material stacks having alternating nanowire and sacrificial layers are employed to release nanowires and permit formation of a coaxial...

10/17/13 - 20130270513 - Electropositive metal containing layers for semiconductor applications
Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the...

10/03/13 - 20130256627 - Sensors incorporating freestanding carbon nanostructures
Sensors for detecting IR radiation, UV radiation, X-Rays, light, gas, and chemicals. The sensors herein incorporate freestanding carbon nanostructures, such as single-walled carbon nanotubes (“SWCNT”), atomically thin carbon sheets having a thickness of about between 1 atom and about 5 atoms (“graphene”), and combinations thereof. The freestanding carbon nanostructures are...

09/19/13 - 20130240828 - Semiconductor device and method of manufacturing the same
A semiconductor device according to embodiments includes a semiconductor substrate, a buried insulating layer which is formed on the semiconductor substrate, a semiconductor layer which is formed on the buried insulating layer and includes a narrow portion and two wide portions which are larger than the narrow portion in width...

09/19/13 - 20130240829 - Quantum dot structure, method for forming quantum dot structure, wavelength conversion element, light-light conversion device, and photoelectric conversion device
This quantum dot structure has a matrix layer and a plurality of crystalline quantum dots provided spaced within the matrix layer. The quantum dots are provided at positions that differ in the direction of thickness of the matrix layer....

09/19/13 - 20130240830 - Direct and sequential formation of monolayers of boron nitride and graphene on substrates
The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be...

09/12/13 - 20130234105 - Bond type flip-chip light-emitting structure and method of manufacturing the same
A bond type flip-chip light-emitting structure and method of manufacturing the same. Firstly, form a positive electrode and a negative electrode on an epitaxy layer. Next, deposit an insulation layer on parts of the positive electrode and negative electrode, to expose respectively a positive electrode via hole and a negative...

08/29/13 - 20130221319 - Gate-all around semiconductor nanowire fet's on bulk semicoductor wafers
Non-planar semiconductor devices are provided that include at least one semiconductor nanowire suspended above a semiconductor oxide layer that is present on a first portion of a bulk semiconductor substrate. An end segment of the at least one semiconductor nanowire is attached to a first semiconductor pad region and another...

08/29/13 - 20130221320 - Led with embedded doped current blocking layer
The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a...

08/22/13 - 20130214242 - Integrated circuitry components, switches, and memory cells
A switch includes a graphene structure extending longitudinally between a pair of electrodes and being conductively connected to both electrodes of said pair. First and second electrically conductive structures are laterally outward of the graphene structure and on opposing sides of the graphene structure from one another. Ferroelectric material is...

08/22/13 - 20130214243 - Nanowires made of novel precursors and method for the production thereof
The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or...

08/15/13 - 20130207070 - Nanocomposite material and its use in optoelectronics
Material comprising a matrix made of semiconducting or insulating, transparent material in which core/shell type nanoparticles are dispersed, the core of which consists of a semiconductor and the shell of which is formed from a material chosen from the oxides TiO2 and/or CeO2. These nanocomposite materials may especially be used...

08/08/13 - 20130200332 - Transistor arrangement and a method of forming a transistor arrangement
In an embodiment, a transistor arrangement is provided. The transistor arrangement comprises a nanowire including a first nanowire region and a second nanowire region; a first gate contact disposed over the first nanowire region; an insulating region disposed over the second nanowire region; a second gate contact disposed over the...

08/08/13 - 20130200333 - Semiconductor light-emitting element with cortex-like nanostructures
The present invention is to provide a semiconductor light-emitting element. The element comprises a substrate and a nanostructural layer. The nanostructural layer is formed on the substrate and comprises a plurality of void-embedded cortex-like nanostructures, wherein the volumetric porosity of the nanostructural layer is ranged from 30% to 59%. Compared...

08/01/13 - 20130193404 - Photoconversion device with enhanced photon absorption
An infrared photoconversion device comprising a collector with at least an active layer made of a single sheet of doped single-layer, bilayer, or multilayer graphene patterned as nanodisks or nanoribbons. The single sheet of doped graphene presents high absorbance and thus, the efficiency of devices such as photovoltaic cells, photodetectors,...

08/01/13 - 20130193405 - Imprinted semiconductor multiplex detection array
An array of sensor devices, each sensor including a set of semiconducting nanotraces having a width less than about 100 nm is provided. Method for fabricating the arrays is disclosed, providing a top-down approach for large arrays with multiple copies of the detection device in a single processing step. Nanodimensional...

07/25/13 - 20130187122 - Photonic device having embedded nano-scale structures
The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound...

06/27/13 - 20130161584 - Light emitting diode (led) using three-dimensional gallium nitride (gan) pillar structures with planar surfaces
A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or...

06/20/13 - 20130153855 - Chemical oxidation of graphene and carbon nanotubes using cerium (iv) ammonium nitrate
A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially...

06/13/13 - 20130146834 - Quantum dot-matrix thin film and method of producing the same
A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are imbedded; and an interface layer disposed between the quantum dots and the inorganic matrix to surround surfaces of...

06/06/13 - 20130140517 - Thin and flexible gallium nitride and method of making the same
A material for use in electronic circuits. The material includes a thin layer of gallium nitride (GaN), the thin layer of GaN produced in a high-volume production setting without mechanical planarization having a thickness of as low as 10 nm and a defect density as low as 105 per cm2....

05/30/13 - 20130134384 - Method of post treating graphene and method of manufacturing graphene using the same
Provided is a method of post treating graphene including providing graphene on a metal thin film, providing a carrier on the graphene, hardening the carrier, and removing the metal thin film from the graphene....

05/23/13 - 20130126824 - Semiconductive nanowire solid state optical device and control method thereof
Disclosed are a semiconductor nanowire solid state optical device and a control method thereof. The device comprises a nanowire, a first electrode, a second electrode, an electrical circuit and a mechanical micro device. The nanowire has a first end and a second end. The first electrode is coupled to the...

05/09/13 - 20130112937 - Nanowire field effect transistor device
A method for forming a field effect transistor device includes forming a nanowire suspended above a substrate, forming a dummy gate stack on a portion of the substrate and around a portion of the nanowire, removing exposed portions of the nanowire, epitaxially growing nanowire extension portions from exposed portions of...

05/09/13 - 20130112938 - Nanowire field effect transistor device
A field effect transistor device includes a nanowire, a gate stack comprising a gate dielectric layer disposed on the nanowire, a gate conductor layer disposed on the dielectric layer and a substrate, and an active region including a sidewall contact portion disposed on the substrate adjacent to the gate stack,...

04/25/13 - 20130099194 - Method of making graphene layers, and articles made thereby
There is provided a method for forming a graphene layer. The method includes forming an article that comprises a carbon-containing self-assembled monolayer (SAM). A layer of nickel is deposited on the SAM. The article is heated in a reducing atmosphere and coolded. The heating and cooling steps are carried out...

04/25/13 - 20130099195 - Direct formation of graphene on semiconductor substrates
The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the...

04/25/13 - 20130099196 - Semiconductor-graphene hybrids formed using solution growth
A novel method for fabrication of hybrid semiconductor-graphene nanostructures in large scale by floating graphene sheets on the surface of a solution is provided. Using this approach, crystalline ZnO nano/micro-rod bundles on graphene fabricated using chemical vapor deposition were prepared. UV detectors fabricated using the as-prepared hybrid ZnO-graphene nano-structure with...

04/25/13 - 20130099197 - Doped graphene electronic materials
A graphene substrate is doped with one or more functional groups to form an electronic device....