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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Bulk Effect Device > Bulk Effect Switching In Amorphous Material > With Specified Electrode Composition Or Configuration With Specified Electrode Composition Or ConfigurationWith Specified Electrode Composition Or Configuration patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/31/08 - 20080023686 - Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same Example embodiments may provide a doped phase change layer and a method of operating and fabricating a phase change memory with the example embodiment doped phase change layer. The phase change memory may include a storage node having a phase change layer and a switching device, wherein the phase change ... 01/17/08 - 20080011999 - Microelectronic devices using sacrificial layers and structures fabricated by same A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are removed to form an opening that exposes a portion of the region. A conductive layer is formed on ... 01/10/08 - 20080006814 - Msm binary switch memory A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top ... 01/10/08 - 20080006813 - Semiconductor memory device and fabrication method thereof A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electrode. The contact portion is formed integrally with the ... 01/10/08 - 20080006812 - Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, ... 01/03/08 - 20080001137 - Optimized solid electrolyte for programmable metallization cell devices and structures A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, ... 01/03/08 - 20080001136 - Electrically writeable and erasable memory medium A memory cell for an electrically writeable and erasable memory medium as well as a memory medium thereof is provided. The memory cell comprises a data recording element, the data recording element has a plurality of multiple-layer structure disposed one on top of another, each the multiple-layer structure comprising a ... 12/20/07 - 20070290186 - Non-volatile variable resistance memory device and method of fabricating the same A non-volatile variable resistance memory device and a method of fabricating the same are provided. The non-volatile variable resistance memory device may include a lower electrode, a buffer layer on the lower electrode, an oxide layer on the buffer layer and an upper electrode on the oxide layer. The buffer ... 12/06/07 - 20070278470 - Phase-change memory device and manufacturing process thereof A phase-change memory cell is formed by a phase-change memory element and by a selection element, which is formed in a semiconductor material body and is connected to the phase-change memory element. The phase-change memory element is made up of a calcogenic material layer and a heater. The selection element ... 11/29/07 - 20070272913 - Forming nonvolatile phase change memory cell having a reduced thermal contact area The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volume assists this phase change. In the present invention, a ... 11/29/07 - 20070272912 - Conductive paste and method of manufacturing electronic component using the same Exemplary embodiments provided a conductive paste including an organic gold compound and a glass component in a solvent. When electrodes are formed on both surfaces of piezoelectric members using the conductive paste according to the invention, it is possible to improve the close adhesion property between the electrodes and the ... 10/11/07 - 20070235711 - Methods of reducing the bandgap energy of a metal oxide Disclosed are methods of reducing the bandgap of a metal oxide by alloying a binary oxide with a Group VI element that is isovalent with oxygen. The Group VI element substitutes for at least a portion of the oxygen in the binary oxide to form the alloyed, ternary oxide. Such ... 10/11/07 - 20070235710 - Nonvolatile memory In non-volatile storage device using a variable resistance material, when a crystal state and a noncrystalline state co-exists in the variable resistance material, a crystallization time is shorted, resulting in decrease of the time to maintain information stored. Heat radiation is not rapidly performed during rewriting and thus it takes ... 10/11/07 - 20070235709 - Memory element with improved contacts A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material. ... 09/20/07 - 20070215853 - Multi-layer phase-changeable memory devices and methods of fabricating the same A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a ... 09/20/07 - 20070215852 - Manufacturing method for pipe-shaped electrode phase change memory A method for manufacturing a memory cell device includes forming a bottom electrode comprising a pipe-shaped member, a top, a bottom and sidewalls having thickness in a dimension orthogonal to the axis of the pipe-shaped member, and having a ring-shaped top surface. A disc shaped member is formed on the ... 09/06/07 - 20070205406 - Phase change memory device and method of manufacture thereof A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode ... 08/16/07 - 20070187664 - Phase change memory cell with high read margin at low power operation A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material ... 08/16/07 - 20070187663 - Damascene phase change memory A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties. ... 08/09/07 - 20070181867 - Phase change memory materials, devices and methods A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and/or Te. Moreover, La can be substituted with ... 06/21/07 - 20070138458 - Damascene phase change ram and manufacturing method A method for manufacturing a memory device uses a damascene process to define memory elements. The device comprises a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness ... 05/31/07 - 20070120107 - Phase-change memory device and method of manufacturing same A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other ... 05/24/07 - 20070114509 - Memory cell comprising nickel-cobalt oxide switching element Oxides of both nickel and cobalt have lower resistivity than either nickel oxide or cobalt oxide. Nickel oxide and cobalt oxide can be reversibly switched between two or more stable resistivity states by application of suitable electrical pulses. It is expected that oxides including both nickel and cobalt, or (NixCoy)O, ... 05/17/07 - 20070108433 - Semiconductor memory device and method of fabricating the same In a semiconductor memory device and a method of fabricating the same, a semiconductor memory device having a transistor and a data storing portion includes a heating portion interposed between the transistor and the data storing portion and a metal interconnection layer connected to the data storing portion, wherein the ... 05/17/07 - 20070108432 - Damascene phase change memory A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties. ... 05/17/07 - 20070108431 - I-shaped phase change memory cell A memory device includes two electrodes, vertically separated and having mutually opposed contact surfaces, between which lies a phase change cell. The phase change cell includes an upper phase change member, having a contact surface in electrical contact with the first electrode; a lower phase change member, having a contact ... 05/17/07 - 20070108430 - Thermally contained/insulated phase change memory device and method (combined) A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielectric material layer, including a phase-change layer positioned between and in electrical contact ... 05/10/07 - 20070102691 - Silver-selenide/chalcogenide glass stack for resistance variable memory The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one ... 05/03/07 - 20070096074 - Electrically rewritable non-volatile memory element and method of manufacturing the same A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase ... 03/22/07 - 20070063181 - Memory device and method of making same A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of ... 03/08/07 - 20070051936 - Phase change memory cell with tubular heater and manufacturing method thereof A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heating element. The contact ... 03/01/07 - 20070045606 - Shaping a phase change layer in a phase change memory cell A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard ... 03/01/07 - 20070045605 - Method for fabricating chalcogenide-applied memory A chalcogenide memory cell includes a lower electrode, a chalcogenide layer, and an upper electrode. The lower electrode includes a tapered cavity. The chalcogenide layer is formed in the tapered cavity of the lower electrode. One side of the chalcogenide layer is adjacent to the lower electrode. The upper electrode ... 02/15/07 - 20070034851 - Chalcogenide devices and materials having reduced germanium or telluruim content A chalcogenide material and chalcogenide memory device exhibiting fast operation (short set pulse times) over an extended range of reset state resistances. Electrical devices containing the instant chalcogenide materials permit rapid transformations from the reset state to the set state for reset and set states having a high resistance ratio. ... 02/15/07 - 20070034850 - Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the ... 02/08/07 - 20070029538 - Method for fabricating an integrated device comprising a structure with a solid electrolyte Method for fabricating an integrated device, comprising the step of providing a substrate, which includes an electrode element, and a step of providing a solid electrolyte element coupled to the electrode element. The solid electrolyte element is provided in a crystalline state and in conjunction with electrode element such to ... 02/08/07 - 20070029537 - Phase change memory cell and method of formation A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second ... 02/01/07 - 20070023744 - Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers. ... 01/25/07 - 20070018149 - Semiconductor device and method of producing the same In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely used as a phase change region. Therefore, the phase change region is not increased ... 01/04/07 - 20070001160 - Phase change material for high density non-volatile memory The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type ... 12/28/06 - 20060289851 - Resistance variable memory device and method of fabrication Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a ... 12/21/06 - 20060284160 - Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic ... 12/07/06 - 20060273297 - Phase change memory cell having ring contacts A memory cell includes a first ring contact, a second ring contact, and phase-change material contacting the first ring contact and the second ring contact. ... 11/30/06 - 20060266993 - Phase change random access memory devices and methods of operating the same Provided are phase change random access memory (PRAM) devices and methods of operating the same. The PRAM device may include a switching device, a lower electrode, a lower electrode contact layer, a phase change layer and/or an upper electrode. The lower electrode may be connected to a switching device. The ... 11/30/06 - 20060266992 - Semiconductor storage device and manufacturing method thereof Since a chalcogenide material has low adhesion to a silicon oxide film, there is a problem in that it tends to separate from the film during the manufacturing step of a phase change memory. In addition, since the chalcogenide material has to be heated to its melting point or higher ... 11/30/06 - 20060266991 - Phase change memory device and method for manufacturing the same Disclosed is a phase change memory device having a uniformly decreased writing current necessary for phase change of a phase change layer and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate having a lower pattern; a first oxide layer formed on the semiconductor ... 11/16/06 - 20060255328 - Using conductive oxidation for phase change memory electrodes A memory may include a phase change memory material having an electrode including a material that is a conductive oxide or that forms a conductive oxide. ... 11/09/06 - 20060249725 - Multilevel phase change memory A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. ... 10/19/06 - 20060231824 - Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device. ... 09/21/06 - 20060208249 - Programmable conductor memory cell structure and method therefor In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depends, in part, on the ... 08/10/06 - 20060175599 - Phase change memory cell with high read margin at low power operation A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material ... 08/10/06 - 20060175598 - Memory device including barrier layer for improved switching speed and data retention The present memory device includes a first electrode, a passive layer on and in contact with the first electrode, the passive layer including copper sulfide, a barrier layer on and in contact with the passive layer, an active layer on and in contact with the barrier layer, and a second ... 07/27/06 - 20060163554 - Electric device comprising phase change material The electric device (1, 100) comprises a resistor (36, 250) comprising a phase change material which is able to be in a first phase and in a second phase. The resistor (36, 250) has an electrical resistance which has a first value when the phase change material is in the ... 07/20/06 - 20060157683 - Nonvolatile phase change memory cell having a reduced thermal contact area The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volume assists this phase change. In the present invention, a ... 07/20/06 - 20060157682 - Write-once nonvolatile phase change memory array The invention provides for a write-once nonvolatile memory array, the memory cells comprising a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. The initial, unprogrammed state of each memory cell is a crystalline, low-resistance state, while the programmed state is an ... 07/06/06 - 20060145135 - Phase-change multi-level cell and operating method thereof A phase-change multi-level memory cell is described, including a semiconductor substrate, a gate structure, two S/D regions, and two phase-change storing units electrically connected to the two S/D regions respectively. One phase-change storing unit can be programmed to one of many phases having different electrical resistances, and combination variations of ... 06/15/06 - 20060124916 - Self-aligned small contact phase-change memory method and device The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalcogenide memory. Particular aspects of the present invention ... 06/15/06 - 20060124915 - Production of an optoelectronic component that is enclosed in plastic, and corresponding methods The invention relates to a simplified method for assembling optoelectronic components that are enclosed in plastic and the construction thereof. The individual component unit contains a semiconductor chip (11) and an optical window (10). A hermetic inclusion of at least the optically active of the semiconductor chip via the window ... 06/01/06 - 20060113521 - Chalcogenide memory having a small active region A chalcogenide phase change memory cell has a substrate with a conductor line. The conductor line has a contact end. An insulating layer is located over the substrate and conductor line. An aperture is located in the insulating layer. The aperture extends to the substrate. A memory material is conformally ... 05/11/06 - 20060097239 - Multilevel phase-change memory, manufacture method and operating method thereof A multilevel phase-change memory, manufacture method and operating method thereof are provided. The memory includes a first phase change layer, a second phase change layer, a first heating layer formed on one surface of the first phase change layer, a second heating layer formed between the first heating layer and ... 05/11/06 - 20060097238 - Non-volatile memory element and production method thereof and storage memory arrangement A nonvolatile memory element and to associated production methods and memory element arrangements are presented. The nonvolatile memory element has a changeover material and a first and second electrically conductive electrode present at the changeover material. To reduce a forming voltage, a first electrode has a field amplifier structure for ... 03/09/06 - 20060049391 - Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof An electronic semiconductor device has a sublithographic contact area between a first conductive region and a second conductive region. The first conductive region is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated shape. One of the walls of the first conductive ... 03/09/06 - 20060049390 - Resistively switching nonvolatile memory cell based on alkali metal ion drift A nonvolatile, resistively switching memory cell includes a layer arranged between a first electrode and a second electrode. The layer includes one or more chalcogenide compound(s) selected from the group consisting of CuInS, CuInSe, CdInS, CdInSe, ZnInS, MnInS, MnZnInS, ZnInSe, InS, InSSe and InSe, with alkali metal or alkaline-earth metal ... 02/16/06 - 20060033094 - Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device. ... 01/19/06 - 20060011902 - Phase change memory device and method for forming the same A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical ... 11/10/05 - 20050247922 - Phase random access memory with high density A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at ... 11/03/05 - 20050242339 - Apparatus and method for transverse characterization of materials An apparatus for transverse characterization of materials includes a lower pattern of contacts, separated by spacings, a material, and an upper pattern of a multiplicity of contacts, separated by spacings differing from the spacings of the lower pattern. The transverse characterization method includes receiving lower pattern of a multiplicity of ... 10/06/05 - 20050218394 - Micro electronic component A micro electronic component, preferably in the form of an electronic memory, includes the use of clusters as an electronic memory. Also disclosed as part of the present invention is a method for fabricating a micro electronic component. The present invention contemplates fabrication of an especially compact electronic memory that ... 08/25/05 - 20050184283 - Semiconductor device having a triple gate transistor and method for manufacturing the same In a semiconductor capable of reducing NBTI and a method for manufacturing the same, a multi-gate transistor includes an active region, gate dielectric, channels in the active region, and gate electrodes, and is formed on a semiconductor wafer. The active region has a top and side surfaces, and is oriented ... 08/25/05 - 20050184282 - Phase change memory cell and method of its manufacture A phase change memory cell includes a resistive heating element for a phase change body that can expeditiously and efficiently heat a portion of the body with the voltage and current usable with MOSFETs. This is achieved through minimizing the area of an interface between a conductive layer and the ... 06/23/05 - 20050133778 - Chalcogenide glass constant current device, and its method of fabrication and operation The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing ... 06/16/05 - 20050127350 - Field emission phase change diode memory A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a ... 06/09/05 - 20050121659 - Non-volatile memory and the fabrication method thereof A non-volatile memory, which comprises an insulating substrate (11) that has a first electrode (18) that extends through the substrate from the front surface to the rear surface thereof; a second electrode (13) that is formed on one side of the insulating substrate (11); and a recording layer (12) that ... ### FreshPatents.com Support |