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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Bulk Effect Device > Bulk Effect Switching In Amorphous Material > With Means To Localize Region Of Conduction (e.g., "pore" Structure) With Means To Localize Region Of Conduction (e.g., "pore" Structure)With Means To Localize Region Of Conduction (e.g., "pore" Structure) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.10/11/07 - 20070235708 - Programmable via structure for three dimensional integration technology A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM ... 10/04/07 - 20070228354 - Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielectric rupture antifuse is ruptured in a preconditioning ... 07/26/07 - 20070170413 - Semiconductor memory Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of ... 06/28/07 - 20070145346 - Connection electrode for phase change material, associated phase change memory element, and associated production process The present disclosure relates to a connection electrode for phase change materials, to an associated phase change memory element and to an associated production process, wherein a plurality of separate insulation regions are formed in an electrode material at least at a connection surface. This reduces the overall size of ... 05/31/07 - 20070120106 - Phase-change memory device and method of manufacturing same A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other ... 05/31/07 - 20070120105 - Lateral phase change memory with spacer electrodes and method of manufacturing the same A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the ... 05/03/07 - 20070096073 - Increasing phase change memory column landing margin A phase change memory with higher column landing margin may be formed. In one approach, the column landing margin may be increased by increasing the height of an electrode. For example, the electrode being made of two disparate materials, one of which includes nitride and the other of which does ... 04/26/07 - 20070090336 - Semiconductor memory In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an upper electrode wire connected to the chalcogenide layer and another wiring layer. ... 04/12/07 - 20070080335 - Gettering using voids formed by surface transformation One aspect of this disclosure relates to a semiconductor structure, comprising a gettering region proximate to a device region in a semiconductor wafer. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids through a surface transformation process. Each of the voids has an interior surface that ... 04/05/07 - 20070075304 - Reduced current phase-change memory device A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other. ... 03/22/07 - 20070063180 - Electrically rewritable non-volatile memory element and method of manufacturing the same A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the ... 02/22/07 - 20070040159 - Manufacturing method and structure for improving the characteristics of phase change memory A manufacturing method and structure for better phase change memory characteristics by improving the interface and the hole-filling properties. The present invention can reduce the power consumption needed to operate and is easy to fabricate. ... 01/18/07 - 20070012906 - Phase-change semiconductor device and methods of manufacturing the same In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall ... 12/28/06 - 20060289850 - Phase change memory and phase change recording medium A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change ... 12/28/06 - 20060289849 - Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented ... 12/28/06 - 20060289848 - Reducing oxidation of phase change memory electrodes A phase change memory may be formed in a way which reduces oxygen infiltration through a chalcogenide layer overlying a lower electrode. Such infiltration may cause oxidation of the lower electrode which adversely affects performance. In one such embodiment, an etch through an overlying upper electrode layer may be stopped ... 12/21/06 - 20060284159 - Phase change memory device and method for manufacturing the same A phase change memory device reduces the current necessary to cause a phase change of a phase change layer. The phase change memory device includes a first oxide layer formed on a semiconductor substrate; a lower electrode formed inside the first oxide layer; a second oxide layer formed on the ... 12/14/06 - 20060278863 - Phase change ram device and method for fabricating the same Disclosed are a phase change RAM device and a method for fabricating a phase change RAM device, which can efficiently lower intensity of current required for changing a phase of a phase change layer. The method includes the steps of providing a semiconductor substrate formed with an insulating interlayer including ... 11/30/06 - 20060266990 - Lateral phase change memory and method therefor Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein ... 09/21/06 - 20060208248 - Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparticles or metal ions fed into the nanopores. ... 09/14/06 - 20060202187 - Photonic device Embodiments of methods, apparatuses, devices, or systems for forming a photonic device are described. ... 08/24/06 - 20060186394 - Snse-based limited reprogrammable cell Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode ... 08/17/06 - 20060180803 - Phase change memory devices and fabrication methods thereof In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film ... 07/27/06 - 20060163553 - Phase change memory and fabricating method thereof A phase change memory including a phase change layer, a first electrode, and a porous dielectric layer formed with a plurality of pores. The porous dielectric layer is formed between the phase change layer and the first electrode. Therefore, the phase change layer may make contact with the first electrode ... 07/20/06 - 20060157681 - Horizontal chalcogenide element defined by a pad for use in solid-state memories A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or ... 07/20/06 - 20060157680 - Semiconductor integrated circuit device With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising ... 07/06/06 - 20060145134 - Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of ... 06/29/06 - 20060138394 - Structure having pores, device using the same, and manufacturing methods therefor A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths. The minute structure comprising pores comprises a) a substrate, b) a plurality of electroconductive layers formed ... 06/22/06 - 20060131555 - Resistance variable devices with controllable channels A memory element having a first electrode is provided, wherein the first electrode comprises at least one conductive nanostructure. The memory element further includes a second electrode and a resistance variable material layer between the first and second electrodes. The first electrode electrically is coupled to the resistance variable material. ... 06/01/06 - 20060113520 - Semiconductor integrated circuit device and method of manufacturing the same Disclosed herein is a phase change memory semiconductor integrated circuit device using a chalcogenide film that solves a problem that the operation temperature capable of ensuring long time memory retention is low due to low phase change temperature is and, at the same time, a problem that power consumption of ... 04/20/06 - 20060081830 - Air gaps between conductive lines for reduced rc delay of integrated circuits Methods of forming air gaps or porous dielectric materials between interconnects of integrated circuits and structures thereof. Air gaps or highly porous dielectric material having a dielectric constant of close to or equal to 1.0 are formed in a first region but not a second region of an interconnect layer. ... 04/13/06 - 20060076549 - Semiconductor memory The object of providing a non-volatile semiconductor memory that stands out by good scalability and a high retention time as well as ensures low switching voltages at low switching times and achieves a great number of switching cycles at good temperature stability is solved by the present invention with a ... 04/06/06 - 20060071204 - Resistive memory element An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical signals to at least a portion of the volume of resistive memory material; and a volume of heating ... 03/23/06 - 20060060832 - Memory component with memory cells having changeable resistance and fabrication method therefor The invention relates to a memory component having memory cells based on an active solid electrolyte material which can be changed in terms of its resistance value. The active solid electrolyte material is embedded between a bottom and top electrode, can be switched between an on state with a low ... 03/16/06 - 20060054878 - Vertical elevated pore phase change memory A vertical elevated pore structure for a phase change memory may include a pore with a lower electrode beneath the pore contacting the phase change material in the pore. The lower electrode may be made up of a higher resistivity lower electrode and a lower resistivity lower electrode underneath the ... 01/05/06 - 20060001017 - Phase-change random access memory device and method for manufacturing the same Disclosed are a phase-change random access memory device and a method for manufacturing the same by performing a photolithography process using electronic beam. The phase-change random access memory device includes a first insulation layer having first contact holes and a second contact hole, conductive plugs for filling the first contact ... 12/29/05 - 20050285096 - Programmable structure, an array including the structure, and methods of forming the same A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, ... 12/22/05 - 20050279986 - Method to form a film A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film. ... 11/03/05 - 20050242338 - Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of ... 10/13/05 - 20050224778 - Forming self-aligned nano-electrodes A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using spacer technology, the gap between the electrodes may be made very ... 09/22/05 - 20050205856 - Enhancement of fabrication yields of nanomechanical devices by thin film deposition A protective film is applied onto a nanostructural feature supported on a sacrificial layer by energy beam assisted deposit of material from a vapor through which the beam passes. A wet etchant is applied to etch away the sacrificial layer beneath the nanostructural feature to leave it suspended as a ... 06/16/05 - 20050127349 - Phase change tip storage cell A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change ... 06/16/05 - 20050127348 - Integrated circuit with upstanding stylus A stylus, an integrated circuit (IC) and method of forming the IC. The stylus extends upward from its apex and has a substantially circular cross section that decreases in diameter upward from the apex. The stylus is formed in a mold that may be formed in an orifice in a ... ### FreshPatents.com Support |