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Bulk Effect Switching In Amorphous Material

Bulk Effect Switching In Amorphous Material patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Bulk Effect Device > Bulk Effect Switching In Amorphous Material



Method of forming controllably conductive oxide
05/28/15 - 20150144857 - In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is...

Semiconductor device
05/28/15 - 20150144858 - The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one...

Semiconductor devices and methods of manufacturing the same
05/14/15 - 20150129824 - A semiconductor device includes a first electrode on a substrate, a selection device pattern, a variable resistance layer pattern, a first protective layer pattern, a second protective layer pattern and a second electrode. The selection device pattern is wider, in a given direction, than the variable resistance layer pattern. The...

Semiconductor device and method for producing semiconductor device
05/14/15 - 20150129825 - A semiconductor device according to the present invention comprises a first pillar-shaped semiconductor layer, a gate insulating film formed around the first pillar-shaped semiconductor layer, a gate electrode made of a metal and formed around the gate insulating film, a gate line made of a metal and connected to the...

Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device
05/07/15 - 20150123063 - An object is to provide a memory including a memory device which includes a layer whose resistance changes and in which reset can be performed by using a reset gate. The object is achieved by a memory device including a pillar-shaped layer whose resistance changes, a reset gate insulating film...

Conductive bridge memory system and method of manufacture thereof
04/02/15 - 20150090947 - A conductive bridge memory system and method of manufacture thereof including: providing a dielectric layer having a hole on a bottom electrode, the hole over the bottom electrode; forming an ionic source layer in the hole and over the bottom electrode including: depositing a reactivation layer over the bottom electrode,...

Resistive memory apparatus and manufacturing method thereof
04/02/15 - 20150090948 - A resistive memory apparatus includes a first electrode formed on a semiconductor substrate, an insulating layer formed on the first electrode and including a hole exposing an upper surface of the first electrode, a data storage unit in which a first resistance-variable material and a second resistance-variable material are alternately...

Memory device and method for manufacturing the same
03/12/15 - 20150069314 - A memory device according to an embodiment includes an ion metal layer containing a first metal, an opposing electrode, a resistance change layer disposed between the ion metal layer and the opposing electrode, a first layer disposed in a central portion of a space between the ion metal layer and...

Nonvolatile memory device and method of manufacturing the same
03/05/15 - 20150060749 - According to an embodiment, a first impurity diffusion layer is provided in a region lower than a drain region and the first impurity diffusion layer diffuses impurities of a second conductivity type. A second impurity diffusion layer is provided between the drain region and the first impurity diffusion layer, and...

Methods, apparatuses, and circuits for programming a memory device
02/26/15 - 20150053907 - Subject matter described pertains to methods, apparatuses, and circuits for programming a memory device....

Phase change memory cell with improved phase change material
02/19/15 - 20150048291 - A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density...

Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same
02/19/15 - 20150048292 - A semiconductor device, a resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device includes a pillar extending substantially perpendicular from a semiconductor substrate, the pillar including an inner portion and an outer portion surrounding the inner portion. A junction region is...

Three-dimensional semiconductor device, variable resistive memory device including the same, and method of manufacturing the same
02/19/15 - 20150048293 - A three-dimensional semiconductor device, a resistive variable memory device including the same, and a method of manufacturing the same are provided. The 3D semiconductor device includes a source formed of a first semiconductor material, a channel layer formed on the source and formed of the first semiconductor material, a lightly...

Variable resistive memory device including vertical channel pmos transistor and method of manufacturing the same
02/19/15 - 20150048294 - A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding...

Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
02/19/15 - 20150048295 - A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same are provided. The semiconductor device includes an active pillar formed on a semiconductor substrate, and including a first region and a second region surrounding at least one surface of the first...

Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
02/19/15 - 20150048296 - A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same. The semiconductor device includes an active pillar formed on a semiconductor substrate, the active pillar including an inner region and an outer region surrounding the inner region, and a fin gate...

Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof
02/12/15 - 20150041746 - A method of manufacture of a non-volatile memory system comprising: forming a dielectric layer having a hole; depositing a first electrode in the hole of the dielectric layer; applying an ion source layer over the first electrode; and depositing a second electrode over the ion source layer including: depositing an...

Phase change material layers
02/12/15 - 20150041747 - A phase change material layer includes germanium (Ge), antimony (Sb), tellurium (Te) and at least one impurity elements. An atomic concentration of impurity elements ranges from about 0<a≦about 0.25 and an atomic concentration of antimony (Sb) ranges from about 0.03<c≦about 0.15....

Nonvolatile memory element and method of manufacturing the same
02/12/15 - 20150041748 - A variable resistance layer between a first electrode and a second electrode includes: a first variable resistance layer contacting the first electrode; and a second variable resistance layer contacting the second electrode and having a lower degree of oxygen deficiency than the first variable resistance layer. A principal face of...

Nonvolatile memory transistor and device including the same
01/29/15 - 20150028278 - Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation...

Method of making a resistive random access memory device
01/22/15 - 20150021537 - The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming...

Device switching using layered device structure
01/22/15 - 20150021538 - A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a...

Memory device
01/08/15 - 20150008385 - According to one embodiment, a memory device includes a stacked film stacked in a superlattice structure. The stacked film includes a first layer, a second layer, and a third layer different in composition. The first layer is provided between the second layer and the third layer. The second layer includes...

Morphology control of ultra-thin meox layer
01/08/15 - 20150008386 - A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer...

Self-selecting pcm device not requiring a dedicated selector transistor
01/08/15 - 20150008387 - A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture....

Conductive metal oxide structures in non volatile re writable memory devices
12/18/14 - 20140367629 - A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions...

3 dimensional semiconductor device and method of manufacturing the same
12/11/14 - 20140361233 - A 3D semiconductor device and a method of manufacturing the same are provided. The method includes forming a first semiconductor layer including a common source node on a semiconductor substrate, forming a transistor region on the first semiconductor layer, wherein the transistor region includes a horizontal channel region substantially parallel...

Electric element
12/11/14 - 20140361234 - A temperature dependent electric element includes a phase change portion including at least one conductive phase change material having a predetermined phase transition temperature, a detector portion configured to detect a change in conductivity of the phase change material caused by a temperature change to a detect phase transition of...

Nonvolatile resistive memory element with a metal nitride containing switching layer
12/11/14 - 20140361235 - A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal...

Reram materials stack for low-operating-power and high-density applications
12/04/14 - 20140353566 - A switching element for resistive-switching memory (ReRAM) provides a controllable, consistent filament break-point at an abrupt structural discontinuity between a layer of high-k high-ionicity variable-resistance (VR) material and a layer of low-k low-ionicity VR material. The high-ionicity layer may be crystalline and the low-ionicity layer may be amorphous. The consistent...

Current-limiting layer and a current-reducing layer in a memory device
12/04/14 - 20140353567 - A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can...

Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix
11/27/14 - 20140346423 - Films having a comb-like structure of nanocolumns of Sm2O3 embedded in a SrTiO3 formed spontaneously on a substrate surface by pulsed laser deposition. In an embodiment, the nanocolumns had a width of about 20 nm with spaces between nanocolumns of about 10 nm. The films exhibited memristive behavior, and were...

Cross-point memory utilizing ru/si diode
11/27/14 - 20140346424 - Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium material and a silicon material. The diodes further include an interface of ruthenium or ruthenium silicide between the silicon material and the ruthenium material....

Phase change memory cell with constriction structure
11/27/14 - 20140346425 - Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by...

Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device
11/20/14 - 20140339488 - A semiconductor device includes a first conductive layer; a second conductive layer; and a resistance variable element interposed between the first conductive layer and the second conductive layer and includes a doped first metal oxide layer and a second metal oxide layer. A density of oxygen vacancies of the second...

Phase-change memory device and method for manufacturing the same
11/20/14 - 20140339489 - A phase-change memory device is provided. The memory device includes a lower electrode, a phase-change material layer formed on the lower electrode, an upper electrode formed on the phase-change material layer, and a stress insulation film formed to surround the phase-change material layer....

Resistive switching memory device having improved nonlinearity and method of fabricating the same
11/20/14 - 20140339490 - A nonvolatile resistive switching memory (ReRAM) device having no selection device is provided. The ReRAM device includes a lower electrode that is formed on on a substrate; a metal oxide layer that is formed on the lower electrode, the metal oxide layer having a resistive switching characteristic; an upper electrode...

Single crystal high dielectric constant material and method for making same
11/13/14 - 20140332746 - The invention provides a stable oxide material system for a capacitor, electronic device or a memory device having an effective high-k value with an effective zero alpha while exhibiting low leakage current density. The stable oxide material comprises Mx-Si1-xO2, wherein the elements M & Si are mixed such that the...

Memristor based on a mixed metal oxide
11/13/14 - 20140332747 - The present invention relates to micro- and nano-electronics devices based on non-conventional materials. Such memristor devices with stable and reproducible characteristics can be used in the production of computer systems based on the analog architecture of artificial neural networks. The device in question consists of an active layer situated between...

Method for manufacturing semiconductor memory device and semiconductor memory device
11/06/14 - 20140326939 - According to one embodiment, a manufacturing method of a semiconductor memory device includes forming a stacked body in which word line material layers and insulating layers are alternately stacked on a base layer. The method includes forming first holes on the stacked body so as to be arranged in a...

Resistance random access memory device
10/30/14 - 20140319442 - A resistance random access memory device is provided, including a first resistance change layer, a second resistance change layer and an ion source layer. The first resistance change layer is made of a first material. The second resistance change layer is provided on the first resistance change layer. The second...

Sequential atomic layer deposition of electrodes and resistive switching components
10/30/14 - 20140319443 - Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without...

High-speed, high-density, and low-power consumption phase-change memory unit, and preparation method thereof
10/02/14 - 20140291597 - The present invention provides a high-speed, high-density, and low-power consumption phase-change memory unit, and a preparation method thereof In the preparation method of the present invention, a transition material layer with an accommodation space is first prepared on a surface of a structure of a formed first electrode, where the...

Resistive random access memory
10/02/14 - 20140291598 - Disclosed is a nonvolatile resistive random access memory. The nonvolatile resistive random access memory includes an upper electrode, a lower electrode, an ion supply layer formed on the lower electrode, and a resistance change layer formed on the ion supply layer. The ion supply layer includes copper-doped carbon. A low-power...

Resistive random access memory
10/02/14 - 20140291599 - Disclosed is a nonvolatile resistive random access memory. The nonvolatile resistive random access memory includes a first electrode, a second electrode, an ion conducting layer disposed between the first and second electrodes, a first heat diffusion preventing layer formed on the first electrode, and a second heat diffusion preventing layer...

Memory device
09/25/14 - 20140284535 - A memory device according to an embodiment, includes a substrate, two or more resistance change memory cells stacked on the substrate, two or more transistors stacked on the substrate, and two or more wirings stacked on the substrate. One of the memory cells and one of the transistors are connected...

Resistance random access memory device
09/25/14 - 20140284536 - A resistance random access memory device according to one embodiment includes an interlayer insulation film which a trench is made therein, an ion supply layer provided along a bottom surface and a side surface of the trench, a portion of the ion supply layer provided along the bottom surface is...

Memory element
09/25/14 - 20140284537 - According one embodiment, a memory element includes: a first electrode layer; a second electrode layer including a metal element; and a memory layer provided between the first electrode layer and the second electrode layer, the memory layer including an oxide layer, and a platinum group metal being dispersed in at...

Memory cells having storage elements that share material layers with steering elements and methods of forming the same
09/25/14 - 20140284538 - A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top...

Resistive switching random access memory with asymmetric source and drain
09/18/14 - 20140264222 - The present disclosure provides one embodiment of a resistive random access memory (RRAM) structure. The RRAM structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage; and a field effect transistor (FET) formed on the semiconductor substrate and coupled with the resistive memory element....

Metal aluminum nitride embedded resistors for resistive random memory access cells
09/18/14 - 20140264223 - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low...

Performance enhancement of forming-free reram devices using 3d nanoparticles
09/18/14 - 20140264224 - Resistive random access memory (ReRAM) cells can include an embedded metal nanoparticle switching layer and electrodes. The metal nanoparticles can be formed using a micelle solution. The generation of the nanoparticles can be controlled in multiple dimensions to achieve desirable performance characteristics, such as low power consumption as well as...

Resistance-variable memory device
09/18/14 - 20140264225 - According to one embodiment, a resistance-variable memory device that is suitable for miniaturization is provided. A resistance-variable memory device according to the embodiment comprises a resistance-variable layer, and an ion supply layer that is laminated on the resistance-variable layer and that contains a silver alloy. A silver concentration of the...

Integration of an amorphous silicon resistive switching device
09/18/14 - 20140264226 - An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching...

Semiconductor memory and method of manufacturing the same
09/18/14 - 20140264227 - A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the...

Phase change memory cell with heat shield
09/11/14 - 20140252294 - A phase change memory cell, an array of the phase change memory cells, and a method for fabricating the phase change memory cells. The phase change memory cell includes a bottom electrode, a heating element, and a heat shield. During programming of the phase change memory cell, the bottom electrode...

One transistor and one resistive (1t1r) random access memory (rram) structure with dual spacers
09/11/14 - 20140252295 - The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode...

Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
08/28/14 - 20140239244 - A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first...

Memory device
08/21/14 - 20140231740 - According to one embodiment, a memory device includes first and second conductive layers, a variable resistance portion, and a multiple tunnel junction portion. The variable resistance portion is provided between the first and second conductive layers. The multiple tunnel junction portion is provided between the first conductive layer and the...

Planar resistive memory integration
08/21/14 - 20140231741 - In an example, a single damascene structure is formed by, for example, providing a dielectric layer, forming a void in the dielectric layer, and forming a portion of a first two-terminal resistive memory cell and a portion of a second two-terminal resistive memory cell within the void. The portions of...

Nonvolatile memory device and method for manufacturing the same
08/14/14 - 20140225053 - A variable resistance layer includes a first variable resistance layer comprising a first metal oxide that is oxygen deficient and a second variable resistance layer comprising a second metal oxide having a degree of oxygen deficiency that is different from that of the first metal oxide, wherein the second variable...

Transition metal oxide bilayers
08/07/14 - 20140217348 - Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the...

Non-volatile memory device and method of manufacturing the same
07/31/14 - 20140209846 - According to one embodiment, there are provided a memory cell forming region, a first wiring hookup region in which first wirings extending in a first direction are formed by being drawn outside of the memory cell forming region, a second wiring hookup region which is disposed in a layer above...

Phase-change memory device having multiple diodes
07/31/14 - 20140209847 - A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the...

Memory constructions
07/31/14 - 20140209848 - Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the...

Variable resistance nonvolatile memory element and method of manufacturing the same
07/24/14 - 20140203234 - A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first...

Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method
07/17/14 - 20140197368 - A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second...

Method of fabricating a vertical mos transistor
07/10/14 - 20140191178 - The disclosure relates to a method of fabricating a vertical MOS transistor, comprising the steps of: forming, above a semiconductor surface, a conductive layer in at least one dielectric layer; etching a hole through at least the conductive layer, the hole exposing an inner lateral edge of the conductive layer...

Vertical bipolar transistor
07/10/14 - 20140191179 - The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed...

Low temperature p+ polycrystalline silicon material for non-volatile memory device
07/10/14 - 20140191180 - A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is...

Moox-based resistance switching materials
07/03/14 - 20140183432 - Molybdenum oxide can be used to form switching elements in a resistive memory device. The atomic ratio of oxygen to molybdenum can be between 2 and 3. The molybdenum oxide exists in various Magneli phases, such as Mo13O33, Mo4O11, Mo17O47, Mo8O23, or Mo9O26. An electric field can be established across...

Semiconductor memory device
07/03/14 - 20140183433 - A semiconductor memory device according to an embodiment comprises a semiconductor layer, a variable resistance layer, a sidewall layer, and a buried layer. The semiconductor layer functions as a rectifying device. The variable resistance layer is provided above or below the semiconductor layer and reversibly changes its resistance. The sidewall...

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