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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Bulk Effect Device > Bulk Effect Switching In Amorphous Material

Bulk Effect Switching In Amorphous Material

Bulk Effect Switching In Amorphous Material patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

09/18/14 - 20140264222 - Resistive switching random access memory with asymmetric source and drain
The present disclosure provides one embodiment of a resistive random access memory (RRAM) structure. The RRAM structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage; and a field effect transistor (FET) formed on the semiconductor substrate and coupled with the resistive memory element....

09/18/14 - 20140264223 - Metal aluminum nitride embedded resistors for resistive random memory access cells
Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low...

09/18/14 - 20140264224 - Performance enhancement of forming-free reram devices using 3d nanoparticles
Resistive random access memory (ReRAM) cells can include an embedded metal nanoparticle switching layer and electrodes. The metal nanoparticles can be formed using a micelle solution. The generation of the nanoparticles can be controlled in multiple dimensions to achieve desirable performance characteristics, such as low power consumption as well as...

09/18/14 - 20140264225 - Resistance-variable memory device
According to one embodiment, a resistance-variable memory device that is suitable for miniaturization is provided. A resistance-variable memory device according to the embodiment comprises a resistance-variable layer, and an ion supply layer that is laminated on the resistance-variable layer and that contains a silver alloy. A silver concentration of the...

09/18/14 - 20140264226 - Integration of an amorphous silicon resistive switching device
An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching...

09/18/14 - 20140264227 - Semiconductor memory and method of manufacturing the same
A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the...

09/11/14 - 20140252294 - Phase change memory cell with heat shield
A phase change memory cell, an array of the phase change memory cells, and a method for fabricating the phase change memory cells. The phase change memory cell includes a bottom electrode, a heating element, and a heat shield. During programming of the phase change memory cell, the bottom electrode...

09/11/14 - 20140252295 - One transistor and one resistive (1t1r) random access memory (rram) structure with dual spacers
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode...

08/28/14 - 20140239244 - Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first...

08/21/14 - 20140231740 - Memory device
According to one embodiment, a memory device includes first and second conductive layers, a variable resistance portion, and a multiple tunnel junction portion. The variable resistance portion is provided between the first and second conductive layers. The multiple tunnel junction portion is provided between the first conductive layer and the...

08/21/14 - 20140231741 - Planar resistive memory integration
In an example, a single damascene structure is formed by, for example, providing a dielectric layer, forming a void in the dielectric layer, and forming a portion of a first two-terminal resistive memory cell and a portion of a second two-terminal resistive memory cell within the void. The portions of...

08/14/14 - 20140225053 - Nonvolatile memory device and method for manufacturing the same
A variable resistance layer includes a first variable resistance layer comprising a first metal oxide that is oxygen deficient and a second variable resistance layer comprising a second metal oxide having a degree of oxygen deficiency that is different from that of the first metal oxide, wherein the second variable...

08/07/14 - 20140217348 - Transition metal oxide bilayers
Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the...

07/31/14 - 20140209846 - Non-volatile memory device and method of manufacturing the same
According to one embodiment, there are provided a memory cell forming region, a first wiring hookup region in which first wirings extending in a first direction are formed by being drawn outside of the memory cell forming region, a second wiring hookup region which is disposed in a layer above...

07/31/14 - 20140209847 - Phase-change memory device having multiple diodes
A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the...

07/31/14 - 20140209848 - Memory constructions
Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the...

07/24/14 - 20140203234 - Variable resistance nonvolatile memory element and method of manufacturing the same
A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first...

07/17/14 - 20140197368 - Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method
A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second...

07/10/14 - 20140191178 - Method of fabricating a vertical mos transistor
The disclosure relates to a method of fabricating a vertical MOS transistor, comprising the steps of: forming, above a semiconductor surface, a conductive layer in at least one dielectric layer; etching a hole through at least the conductive layer, the hole exposing an inner lateral edge of the conductive layer...

07/10/14 - 20140191179 - Vertical bipolar transistor
The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed...

07/10/14 - 20140191180 - Low temperature p+ polycrystalline silicon material for non-volatile memory device
A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is...

07/03/14 - 20140183432 - Moox-based resistance switching materials
Molybdenum oxide can be used to form switching elements in a resistive memory device. The atomic ratio of oxygen to molybdenum can be between 2 and 3. The molybdenum oxide exists in various Magneli phases, such as Mo13O33, Mo4O11, Mo17O47, Mo8O23, or Mo9O26. An electric field can be established across...

07/03/14 - 20140183433 - Semiconductor memory device
A semiconductor memory device according to an embodiment comprises a semiconductor layer, a variable resistance layer, a sidewall layer, and a buried layer. The semiconductor layer functions as a rectifying device. The variable resistance layer is provided above or below the semiconductor layer and reversibly changes its resistance. The sidewall...

06/26/14 - 20140175354 - Sequential atomic layer deposition of electrodes and resistive switching components
Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without...

06/26/14 - 20140175355 - Carbon doped resistive switching layers
Provided are carbon doped resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching. Relative to many conventional...

06/26/14 - 20140175356 - Resistive random access memory access cells having thermally isolating structures
Provided are resistive random access memory (ReRAM) cells including resistive switching layers and thermally isolating structures for limiting heat dissipation from the switching layers during operation. Thermally isolating structures may be positioned within a stack or adjacent to the stack. For example, a stack may include one or two thermally...

06/26/14 - 20140175357 - Morphology control of ultra-thin meox layer
A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer...

06/26/14 - 20140175358 - Phase-change random access memory device and method of manufacturing the same
A phase-change random access memory device and a method of manufacturing the same are provided. The method includes providing a semiconductor substrate including a heating electrode, forming an interlayer insulating layer including a preliminary phase-change region on the semiconductor substrate, reducing a diameter of an inlet portion of the preliminary...

06/26/14 - 20140175359 - Diffusion barrier layer for resistive random access memory cells
Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The...

06/19/14 - 20140166959 - Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and mosfet select devices for memory and logic applications
The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change...

06/12/14 - 20140158964 - Semiconductor devices having blocking layers and methods of forming the same
A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or...

06/12/14 - 20140158965 - Memory cells and methods of forming memory cells
A method of forming a memory cell includes forming programmable material within an opening in dielectric material over an elevationally inner conductive electrode of the memory cell. Conductive electrode material is formed over the dielectric material and within the opening. The programmable material within the opening has an elevationally outer...

06/05/14 - 20140151621 - Method of forming anneal-resistant embedded resistor for non-volatile memory application
Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first...

06/05/14 - 20140151622 - Phase change memory
A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second...

06/05/14 - 20140151623 - Resistive random access memory devices formed on fiber and methods of manufacturing the same
Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an...

06/05/14 - 20140151624 - Target, method for producing the same, memory, and method for producing the same
A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element...

06/05/14 - 20140151625 - Nonvolatile memory device using a varistor as a current limiter element
Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to...

05/29/14 - 20140145135 - Sub-oxide interface layer for two-terminal memory
Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can created comprising a non-stoichimetric sub-oxide that can be a combination...

05/29/14 - 20140145136 - Non-volatile memory device and manufacturing method thereof
A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first...

05/29/14 - 20140145137 - Resistive random access memory devices having variable resistance layers
Resistive memory devices are provided having a gate stack including insulating layers and gates stacked on a substrate in a vertical direction, a channel penetrating the gate stack in the vertical direction to be electrically connected to the substrate, a gate insulating layer provided between the channel and the gates,...

05/29/14 - 20140145138 - Resistive random access memory devices, and related semiconductor device structures
A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random...

05/22/14 - 20140138597 - Non-volatile semiconductor memory device
First conductive layers extend in a first direction horizontal to a substrate as a longitudinal direction, and are stacked in a direction perpendicular to a substrate. An interlayer insulating layer is provided between the first conductive layers. The variable resistance layers functioning as a variable resistance element are formed continuously...

05/22/14 - 20140138598 - Nonvolatile memory device
According to one embodiment, nonvolatile memory device includes a semiconductor layer, a conductive layer and a resistance change layer. The semiconductor layer has an impurity concentration less than 1×1019 cm−3. The resistance change layer is provided between the semiconductor layer and the conductive layer. The resistance change layer includes a...

05/22/14 - 20140138599 - Nonvolatile memory element and method for manufacturing the same
A nonvolatile memory element includes a first and a second electrode layers, and a variable resistance layer provided between the first and the second electrode layers and having a resistance value reversibly changing according to application of an electrical pulse, wherein the variable resistance layer includes a first variable resistance...

05/15/14 - 20140131649 - Magnetoresistance element and magnetic memory
According to one embodiment, a magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected...

05/01/14 - 20140117298 - Complementary metal oxide heterojunction memory devices and methods related thereto
A resistive memory device is disclosed. The memory device comprises one or mo re metal oxide layers. An oxygen vacancy or ion concentrations of the one or more metal oxide layer is controlled in the formation and the operation of the memory device to provide robust memory operation....

05/01/14 - 20140117299 - Memory cells, memory cell arrays, methods of using and methods of making
A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second...

05/01/14 - 20140117300 - Memory elements using self-aligned phase change material layers and methods of manufacturing same
A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in...

04/24/14 - 20140110656 - Phase change memory with various grain sizes
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The...

04/17/14 - 20140103280 - Nonvolatile resistive memory element with a passivated switching layer
A nonvolatile resistive memory element has a novel variable resistance layer that is passivated with non-metallic dopant atoms, such as nitrogen, either during or after deposition of the switching layer. The presence of the non-metallic dopant atoms in the variable resistance layer enables the switching layer to operate with reduced...

04/10/14 - 20140097396 - Non-volatile memory device and manufacturing method thereof
wherein the side wall protective layer extends across the second electrode to a position which is above an upper end of the second electrode and below an upper end of the connection layer such that an upper end of the side wall protective layer is located above the upper end...