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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Bulk Effect Device > Bulk Effect Switching In Amorphous Material Bulk Effect Switching In Amorphous MaterialBulk Effect Switching In Amorphous Material patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017841 - Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first ... 01/17/08 - 20080011998 - Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method A method of fabricating a chalcogenide memory cell is described. The cross-sectional area of a chalcogenide memory element within the cell is controlled by the thickness of a bottom electrode and the width of a word line. The method allows the formation of ultra small chalcogenide memory cells. ... 12/20/07 - 20070290184 - Method for programming a multilevel phase change memory device A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at ... 11/08/07 - 20070257246 - Electric device with nanowires comprising a phase change material The method according to the invention is directed to manufacturing an electric device (100) according to the invention, having a body (102) with a resistor comprising a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase ... 11/01/07 - 20070252128 - Switching device and methods for controlling electron tunneling therein A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular ... 11/01/07 - 20070252127 - Phase change memory element with a peripheral connection to a thin film electrode and method of manufacture thereof A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change element ... 11/01/07 - 20070252126 - Driver and drive method for organic bistable electrical device and organic led display An electroluminescent device based on bistability, and method for its use. The device alternates between a low resistance state and a high resistance state by application of an electrical voltage. A bistable electrical device has two electrodes sandwiching an organic material that produces bistable action. An organic light emitting diode ... 10/25/07 - 20070246699 - Phase change memory cell with vacuum spacer A memory device. The device includes first and second electrode members, in spaced relation on a substrate. A phase change element lies in electrical contact with the first and second electrode elements and spans the space separating them. The phase change element includes two segments, each in contact with one ... 10/11/07 - 20070235707 - Multi-terminal phase change devices Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created ... 09/27/07 - 20070221906 - Phase-changeable memory devices including nitrogen and/or silicon dopants A phase-changeable memory device includes a substrate having a field effect transistor therein and a phase-changeable material electrically coupled to a source region of the field effect transistor. The phase-changeable material includes a chalcogenide composition containing at least germanium, bismuth and tellurium and at least one dopant selected from a ... 09/27/07 - 20070221905 - Reduced power consumption phase change memory and methods for forming the same Memory cells for reduced power consumption and methods for forming the same are provided. A memory cell has a layer of phase change material. A first portion of the phase change material layer includes the programmable volume of the memory cell and its crystalline state has a higher resistivity than ... 09/13/07 - 20070210297 - Electrical structure with a solid state electrolyte layer, memory with a memory cell and method for fabricating the electrical structure The invention refers to a memory, a method of fabricating an electrical structure, and an electrical structure containing a substrate, a solid state electrolyte layer, and an electrode layer. The electrical structure contains a layer region arranged at an interface between the solid state electrolyte layer and the electrode layer. ... 09/13/07 - 20070210296 - Electrode for phase change memory device and method An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (ANx), where A is one of titanium (Ti) and tungsten (W) and x greater than zero, but is less ... 07/12/07 - 20070158631 - Phase change current density control structure A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is ... 07/05/07 - 20070152204 - Pcram device with switching glass layer A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device. ... 05/31/07 - 20070120104 - Phase change material and non-volatile memory device using the same The present invention provides a phase change memory cell comprising (GeASbBTeC)1−x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention ... 05/24/07 - 20070114508 - Reversible resistivity-switching metal oxide or nitride layer with added metal A layer of resistivity-switching metal oxide or nitride can attain at least two stable resistivity states. Such a layer may be used in a state-change element in a nonvolatile memory cell, storing its data state, for example a “0” or a “1”, in this resistivity state. Including additional metal atoms ... 05/17/07 - 20070108429 - Pipe shaped phase change memory A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped member. An integrated circuit including an array of pipe-shaped phase change memory cells is described. ... 05/03/07 - 20070096072 - Lateral phase change memory A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a ... 05/03/07 - 20070096071 - Multi-terminal phase change devices Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created ... 03/29/07 - 20070069192 - Thermal switching element and method for manufacturing the same The present invention provides a thermal switching element that has a quite different configuration from that of a conventional technique and can control heat transfer by the application of energy, and a method for manufacturing the thermal switching element. The thermal switching element includes a first electrode, a second electrode, ... 03/01/07 - 20070045604 - Resistance variable memory device with nanoparticle electrode and method of fabrication A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle. ... 02/15/07 - 20070034849 - Multi-layer chalcogenide devices A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes ... 02/15/07 - 20070034848 - Reproducible resistance variable insulating memory devices and methods for forming same The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric field at the tip of the bottom ... 02/01/07 - 20070023743 - Phase-change tan resistor based triple-state/multi-state read only memory The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN ... 01/25/07 - 20070018148 - Phase change memory with u-shaped chalcogenide cell A phase change memory may be made of a chalcogenide material having a U-shape. The U-shaped chalcogenide may transition between amorphous and crystalline phases in an upper part of a vertical portion thereof. As a result, in some embodiments, self-heating may be achieved without the need for a heater, and ... 01/18/07 - 20070012905 - Novel phase change random access memory A phase change memory device with a reduced phase change volume and lower drive current and a method for forming the same are provided. The method includes forming a bottom insulating layer comprising a bottom electrode contact, forming a bottom electrode film on the bottom electrode contact, forming an anti-reflective ... 01/11/07 - 20070007506 - Layered resistance variable memory device and method of fabrication The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least ... 01/11/07 - 20070007505 - Chalcogenide pvd components A chalcogenide PVD component includes a bonded mixture of particles of a first solid and a second solid. The first solid contains a first compound. The particle mixture may exhibit a minimum solid phase change temperature greater than a solid phase change phase temperature of an element in the first ... 12/28/06 - 20060289847 - Reducing the time to program a phase change memory to the set state A phase change memory may be formed with a chalcogenide layer that contains titanium. The titanium reduces the crystallization time. Set state resistance may also be decreased, thereby reducing the access time of the semiconductor memory, in some embodiments. ... 12/21/06 - 20060284158 - Self-aligned, embedded phase change ram and manufacturing method An integrated circuit with an embedded memory comprises a substrate and a plurality of conductor layers arranged for interconnecting components of the integrated circuit. An intermediate layer in the plurality of conductor layers includes a first electrode having a top surface, a second electrode having a top surface, an insulating ... 12/21/06 - 20060284157 - Thin film plate phase change ram circuit and manufacturing method A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs include a first ... 12/21/06 - 20060284156 - Phase change memory cell defined by imprint lithography A memory cell includes a first electrode, a second electrode, and a phase-change material between the first electrode and the second electrode. A minimum cross-sectional area of a current path between the first electrode and the second electrode is defined by an imprint lithography process. ... 11/09/06 - 20060249724 - Method and structure for peltier-controlled phase change memory A memory cell includes a phase change material (PCM) element that stores an information bit. A heating element external to the PCM element changes the information bit. A cooling element increases the speed of the information bit change. ... 10/19/06 - 20060231823 - Structure for amorphous carbon based non-volatile memory A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the ... 10/12/06 - 20060226411 - Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor formed on the substrate, and a storage node coupled to the transistor, wherein the storage node includes: a lower electrode ... 10/12/06 - 20060226410 - Heating phase change material A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to ... 10/12/06 - 20060226409 - Structure for confining the switching current in phase memory (pcm) cells Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a narrow channel of phase change material to a top contact. The channel is tapered from ... 10/05/06 - 20060219994 - Structure for amorphous carbon based non-volatile memory A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the ... 08/31/06 - 20060192193 - Phase-change ram and method for fabricating the same A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between ... 08/10/06 - 20060175597 - Phase change memory cell with high read margin at low power operation A memory cell device includes a first electrode, a heater adjacent the first electrode, phase-change material adjacent the heater, a second electrode adjacent the phase-change material, and isolation material adjacent the phase-change material for thermally isolating the phase-change material. ... 08/10/06 - 20060175596 - Phase change memory cell with high read margin at low power operation The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the ... 08/03/06 - 20060169968 - Pillar phase change memory cell The present invention includes a phase-change memory cell device and method that includes a memory cell, a selection device, a contact, and a sublithographic pillar. The contact is coupled to the selection device. The phase-change pillar is coupled to the contact. The sublithographic pillar is coupled to the contact. The ... 07/20/06 - 20060157679 - Structure and method for biasing phase change memory array for reliable writing A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected memory cells are disturbed. In order to avoid disturbing unselected memory ... 07/13/06 - 20060151771 - Phase-change-type semiconductor memory device A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the bit lines and selection lines. Each memory cell includes a chalcogenide ... 06/29/06 - 20060138393 - Ge precursor, gst thin layer formed using the same, phase-change memory device including the gst thin layer, and method of manufacturing the gst thin layer Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The ... 06/22/06 - 20060131554 - Nonvolatile memory device having two or more resistance elements and methods of forming and using the same A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold ... 05/18/06 - 20060102887 - Protection of active layers of memory cells during processing of other elements A method of fabricating an electronic structure by providing a conductive layer, providing a dielectric layer over the conductive layer, providing first and second openings through the dielectric layer, providing first and second conductive bodies in the first and second openings respectively and in contact with the conductive layer, providing ... 05/04/06 - 20060091374 - Multibit phase change memory device and method of driving the same A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of ... 05/04/06 - 20060091373 - Method for programming a multilevel phase change memory device A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at ... 04/27/06 - 20060086931 - Electro- and electroless plating of metal in the manufacture of pcram devices Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a ... 04/13/06 - 20060076548 - Prams having a plurality of active regions located vertically in sequence and methods of forming the same There are provided PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same. The PRAM and the method provide an approach to rapidly changing phase in a phase change layer pattern with a given design rule. A semiconductor substrate defining at least one ... 03/09/06 - 20060049389 - Electric device comprising phase change material The electric device (1, 100) has a body (2, 101) with a resistor (7, 250) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 250) has an electric resistance which depends on whether the phase change material is in the first ... 03/02/06 - 20060043355 - Prams having phase-change layer pattern with electrode contact area and methods of forming the same According to some embodiments of the present invention, there are provided PRAMS having a phase-change layer pattern interposed between a molding layer and a forming layer pattern, and methods of forming the same that include a node conductive layer pattern, a molding layer, a forming layer pattern and a protecting ... 03/02/06 - 20060043354 - Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from ... 01/12/06 - 20060006374 - Phase-change memory device and method of manufacturing the same Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a first oxide layer formed on a dielectric interlayer and a ... 01/05/06 - 20060001016 - Initializing phase change memories A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions. As a result of the threshold increase, it is possible to transition cells, initially fabricated in the ... 12/29/05 - 20050285095 - Resistive semiconductor element based on a solid-state ion conductor A nonvolatile, resistively switching memory cell has a layer of a porous dielectric between a first electrode. The dielectric is not a chalcogenide. ... 12/29/05 - 20050285094 - Phase-changeable memory devices Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on ... 11/17/05 - 20050253128 - Techniques for spin-flop switching with offset field Techniques for reducing switching fields in semiconductor devices are provided. In one aspect, a semiconductor device comprising at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is provided. The semiconductor device is configured such that a thickness of at least one of the ... 11/10/05 - 20050247921 - Memory device using multi-layer with a graded resistance change A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer. ... 11/03/05 - 20050242337 - Switching device for reconfigurable interconnect and method for making the same A switching device to be reversibly switched between an electrically isolating off-state and an electrically conducting on-state for use in, e.g., a reconfigurable interconnect. The device includes two separate electrodes, one of which being a reactive metal electrode and the other one being an inert electrode, and a solid state ... 08/11/05 - 20050173691 - Structure for phase change memory and the method of forming same A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change material. A contact structure formed in the first insulating ... 08/04/05 - 20050167645 - Phase change memory devices including memory elements having variable cross-sectional areas A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and ... 07/21/05 - 20050156150 - Phase change memory and phase change recording medium A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change ... 06/30/05 - 20050139816 - Memory devices having sharp-tipped phase change layer patterns and methods of forming the same Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact ... 06/16/05 - 20050127347 - Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same A protection layer is formed on a semiconductor substrate having a cell array region and an alignment key region. A plurality of data storage elements are formed on the protection layer in the cell array region. An insulating layer is formed on the data storage elements, a barrier layer is ... ### FreshPatents.com Support |