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Bulk Effect Device

Bulk Effect Device patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)


Bulk Effect Device



Semiconductor memory device
09/25/14 - 20140284533 - According to one embodiment, a semiconductor memory device comprises a cell transistor includes a first gate electrode buried in a semiconductor substrate and a first diffusion layer and a second diffusion layer formed to sandwich the first gate electrode, a first lower electrode formed on the first diffusion layer, a...

Magnetoresistive element and manufacturing method thereof
09/25/14 - 20140284534 - According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a first magnetic layer having a variable magnetization direction. A first nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer having a fixed magnetization direction is provided on the first nonmagnetic layer. The...

Using saturated and unsaturated ald processes to deposit oxides as reram switching layer
06/19/14 - 20140166956 - A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and...

Hybrid circuit of nitride-based transistor and memristor
06/19/14 - 20140166957 - A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active...

Controlling reram forming voltage with doping
06/19/14 - 20140166958 - An internal electrical field in a resistive memory element can be formed to reduce the forming voltage. The internal electric field can be formed by incorporating one or more charged layers within the switching dielectric layer of the resistive memory element. The charged layers can include adjacent charge layers to...

Embedded non-volatile memory
06/12/14 - 20140158963 - The present invention is a method of incorporating a non-volatile memory into a CMOS process that requires four or fewer masks and limited additional processing steps. The present invention is an epi-silicon or poly-silicon process sequence that is introduced into a standard CMOS process (i) after the MOS transistors' gate...

Self-aligned wire for spintronic device
06/05/14 - 20140151620 - A method for fabricating a spintronic cell includes forming a cavity in a substrate, forming a wire in the cavity, depositing a spacer layer over exposed portions of the substrate and the conductive field line, depositing a layer of conductive material on a portion of the spacer layer, removing portions...

Resistive memory device fabricated from single polymer material
04/10/14 - 20140097395 - A polymer-based device comprising a substrate; a first electrode disposed on the substrate; an active polymer layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the active polymer layer, wherein the first and the second electrodes are organic electrodes...

Magnetic random access memory with switching assist layer
01/30/14 - 20140027697 - A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of...

Magnetic device and method of manufacturing the same
01/23/14 - 20140021426 - A magnetic device comprises a memory cell comprising a magnetic resistance device and lower and upper electrodes with the magnetic resistance device interposed therebetween to apply current to the magnetic resistance device. The magnetic resistance device includes: a buffer layer for controlling a crystalline axis for inducing perpendicular magnetic anisotropy...

Semiconductor device
01/23/14 - 20140021427 - According to one embodiment, a semiconductor device includes a substrate and an interconnect region on the substrate. The interconnect region includes a first interconnect having a first contact portion whose plane shape is a ring-like plane shape, a second interconnect disposed below the first interconnect, and a contact electrode passing...

Thermally-confined spacer pcm cells
01/16/14 - 20140014888 - A memory device includes an array of contacts and a patterned insulating layer over the array of contacts. The patterned insulating layer includes a trench. The trench includes a sidewall aligned over a plurality of contacts in the array. A plurality of bottom electrodes on a lower portion of the...

Semiconductor devices and methods of fabricating the same
01/16/14 - 20140014889 - A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating...

Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the same
12/12/13 - 20130328005 - A semiconductor device includes a substrate extending in a horizontal direction. An active pillar is present on the substrate extending in a vertical direction relative to the horizontal direction of extension of the substrate. A variable resistive pattern is present on the substrate extending in the vertical direction along the...

Memory arrays and methods of forming an array of memory cells
12/05/13 - 20130320283 - A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line contacts. Longitudinal orientation of the lines of covering material is used in forming lines comprising programmable material and outer electrode material that are between...

Variable resistance memory device and method for fabricating the same
11/14/13 - 20130299763 - A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a...

Semiconductor device and its manufacturing method
10/24/13 - 20130277635 - In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The...

Nonvolatile memory device and method for manufacturing the same
09/26/13 - 20130248795 - According to one embodiment, a nonvolatile memory device includes a first function layer. The first function layer includes a first electrode layer, a second electrode layer, and a variable resistance layer. The second electrode layer is opposed to the first electrode layer. The variable resistance layer is provided between the...

Nonvolatile memory device and method for manufacturing same
09/26/13 - 20130248796 - According to one embodiment, a nonvolatile memory device includes a first wiring layer. The device includes a second wiring layer intersecting with the first wiring layer. And the device includes a first memory layer provided at a position where the first wiring layer and the second wiring layer intersect. And...

Semiconductor memory device
09/12/13 - 20130234086 - A semiconductor memory device according to an embodiment comprises a semiconductor layer, a variable resistance layer, a sidewall layer, and a buried layer. The semiconductor layer functions as a rectifying device. The variable resistance layer is provided above or below the semiconductor layer and reversibly changes its resistance. The sidewall...

Non-volatile resistance change device
09/12/13 - 20130234087 - ....

Semiconductor device
09/12/13 - 20130234088 - According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film...

Variable resistive memory device
08/29/13 - 20130221306 - A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell...

Memory structures, memory arrays, methods of forming memory structures and methods of forming memory arrays
08/22/13 - 20130214230 - Some embodiments include methods of forming memory structures. An electrically insulative line is formed over a base. Electrode material is deposited over the line and patterned to form a pair of bottom electrodes along the sidewalls of the line. Programmable material is formed over the bottom electrodes, and a top...

Self-isolated conductive bridge memory device
08/08/13 - 20130200320 - A conductive-bridge random access memory device is disclosed comprising a second metal layer configured to provide second metal cations; a layer of insulator adjacent to the second metal layer; the layer of insulator comprising a layer of first insulator and a layer of second insulator; the layer of second insulator...

Semiconductor device
07/18/13 - 20130181180 - A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an...

Nonvolatile semiconductor memory device and method of manufacturing the same
07/11/13 - 20130175490 - According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion...

Semiconductor devices and methods of manufacturing the same
07/11/13 - 20130175491 - Semiconductor devices, and methods of manufacturing the same, include a field region in a semiconductor substrate to define an active region. An interlayer insulating layer is on the semiconductor substrate. A semiconductor pattern is within a hole vertically extending through the interlayer insulating layer. The semiconductor pattern is in contact...

Variable resistance memory device and method for fabricating the same
07/04/13 - 20130168628 - A variable resistance memory device includes a first trench extending in a first direction formed in a first insulation layer, a first conductive layer in the first trench, a protective layer over the first conductive layer in the first trench, a second insulation layer over the first insulation layer and...

Phase-change random access memory device and method of manufacturing the same
05/30/13 - 20130134371 - A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat...

Semiconductor device and method of manufacturing the same
05/30/13 - 20130134372 - According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to...

Memory cells, integrated devices, and methods of forming memory cells
05/23/13 - 20130126812 - Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common...

Mram with sidewall protection and method of fabrication
02/07/13 - 20130032775 - BEOL memory cells are described that include one or more sidewall protection layers on the memory device (including, for example, an MTJ element) deposited prior to interconnect via etching to prevent the formation of electrical shorts between layers. One embodiment uses a single layer sidewall protection sleeve that is deposited...

Memristor with controlled electrode grain size
01/31/13 - 20130026434 - A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second...

Memory cell
01/03/13 - 20130001494 - A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that...

Phase change memory cell and phase chage memory
12/27/12 - 20120326109 - A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase...

Phase change memory devices and methods of manufacturing the same
12/27/12 - 20120326110 - A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on...

Phase-change memory device including a vertically-stacked capacitor and a method of the same
12/06/12 - 20120305872 - A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes a phase change memory structure, and the vertically-stacked capacitor structure electrically connected to the phase change memory structure and comprising a first capacitor and a second capacitor that...

Vertical interconnect structure, memory device and associated production method
12/06/12 - 20120305873 - The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is...

Nonvolatile semiconductor memory device and manufacturing method thereof
11/29/12 - 20120298945 - A nonvolatile semiconductor memory device of the present invention includes a substrate (1), first wires (2), memory cells each including a resistance variable element (5) and a portion of a diode element (6), second wires (11) which respectively cross the first wires (2) to be perpendicular to the first wires...

Shaping a phase change layer in a phase change memory cell
11/29/12 - 20120298946 - A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard...

Resistance variable memory cells and methods
11/08/12 - 20120280195 - Resistance variable memory cells and methods are described herein. One or more methods of forming a resistance variable memory cell include forming a silicide material on a terminal of a select device associated with the resistance variable memory cell, forming a modified region of the silicide material by modifying a...

Electroforming free memristor
11/08/12 - 20120280196 - An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material (112) and reactive particles (114)...

Flat lower bottom electrode for phase change memory cell
11/08/12 - 20120280197 - A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is...

Lateral phase change memory
09/27/12 - 20120241704 - A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a...

Memory cell constructions, and methods for fabricating memory cell constructions
09/13/12 - 20120228573 - Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient of expansion than the programmable material. A retaining shell may be formed adjacent the programmable material. The memory cell may be thermally...

Semiconductor device including phase change material and method of manufacturing same
08/23/12 - 20120211715 - Disclosed herein is a device that includes: an interlayer insulation film having a through hole; and a phase change storage element provided in the through hole. The phase change storage element includes: an outer electrode being a conductive film of cylindrical shape and being formed along an inner wall of...

Organic redox active compounds with reversible storage of charges and substrates and molecular memory devices comprising them
08/16/12 - 20120205605 - An organic redox active compound with reversible storage of charge is disclosed. The material characterized by a formula R-M-Y-T. According to some aspects, R represents a deconjugating group, M represents an organic redox active fragment, not comprising any metal ion or metal, capable of reversibly storing at least one charge,...

Variable resistance memory
07/12/12 - 20120175580 - A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a...

Method of etching a programmable memory microelectronic device
07/05/12 - 20120168704 - A method of etching a programmable memory microelectronic device (10) having a substrate covered with at least one of the following layers in succession: a first electrode (2) based on a first metallic element; a layer (4) of chalcogenide doped with a second metallic element; a second electrode (5) based...

Nonvolatile memory device and method of manufacturing the same
05/31/12 - 20120132879 - Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection...

Phase change memory device, storage system having the same and fabricating method thereof
03/22/12 - 20120068136 - Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact...

3-d structured nonvolatile memory array and method for fabricating the same
03/15/12 - 20120061637 - The present invention relates to a field of nonvolatile memory technology in ULSI circuits manufacturing technology and discloses a 3D-structured resistive-switching memory array and a method for fabricating the same. The 3D-structured resistive-switching memory array according to the invention includes a substrate and a stack structure of bottom electrodes/isolation dielectric...

Memory element and memory device
03/15/12 - 20120061638 - There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory...

Novel bifunctional molecules comprising a cycloalkyne or heterocycloalkyne group and a redox group
02/16/12 - 20120037871 - The invention relates to compounds comprising a cycloalkyne or heterocycloalkyne group and a redox group. Said compounds are of general formula (I) wherein Z is a cycloalkyne or heterocycloalkyne with at least 8 links, optionally substituted by a halogen atom or a linear or branched C1 to C5 alkyl, A...

Phase change memory cell with heater and method therefor
01/12/12 - 20120007031 - A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at...

Solid-state memory
12/29/11 - 20110315942 - A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to...

Memory storage device and method of manufacturing the same
12/15/11 - 20110303887 - A memory storage device includes: a lower electrode formed to be separated for each of memory cells; a memory storage layer formed on the lower electrode and capable of recording information according to a change in resistance; and an upper electrode formed on the memory storage layer, wherein the memory...

Phase change memory cells and fabrication thereof
12/08/11 - 20110297908 - A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (10). A...

Magnetic memory element and magnetic memory
12/08/11 - 20110297909 - A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having...

Semiconductor device
11/17/11 - 20110278527 - According to one embodiment, a semiconductor device includes a substrate and an interconnect region on the substrate. The interconnect region includes a first interconnect having a first contact portion whose plane shape is a ring-like plane shape, a second interconnect disposed below the first interconnect, and a contact electrode passing...

Method for fabricating a phase-change memory cell
10/13/11 - 20110248233 - A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change...

Vertical interconnect structure, memory device and associated production method
10/13/11 - 20110248234 - The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is...

Silicon-based memristive device
10/06/11 - 20110240941 - A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a mobile dopant species (210, 215) within the silicon memristive matrix (105) which moves in response to a programming electrical...

Semiconductor device and method of manufacturing the same
09/15/11 - 20110220858 - A semiconductor device and a method of manufacturing the same. The semiconductor device may include a lower electrode having a hollow cylindrical shape of which an upper portion is open, the lower electrode being disposed on a substrate, an insulating structure wrapping the lower electrode and including a nitride, a...

Two-terminal nanotube devices and systems and methods of making same
09/15/11 - 20110220859 - A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of...

Reducing temporal changes in phase change memories
09/01/11 - 20110210300 - A phase change memory in the reset state may be heated to reduce or eliminate electrical drift....

Memory cell formed using a recess and methods for forming the same
08/11/11 - 20110193042 - In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer; (2) selectively removing the metal hardmask layer to create a void; and (3) forming a carbon-based...

Continuous plane of thin-film materials for a two-terminal cross-point memory
06/09/11 - 20110133147 - A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of...

Self-aligned bipolar junction transistors
04/14/11 - 20110084247 - A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a plurality of silicide protection strips, and at least one control contact region. Silicide regions are formed on the second...

Memristor with a non-planar substrate
02/03/11 - 20110024710 - A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such...

Apparatus for reducing photodiode thermal gain coefficient and method of making same
02/03/11 - 20110024711 - An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer...