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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes) > Bulk Effect Device

Bulk Effect Device

Bulk Effect Device patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

04/10/14 - 20140097395 - Resistive memory device fabricated from single polymer material
A polymer-based device comprising a substrate; a first electrode disposed on the substrate; an active polymer layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the active polymer layer, wherein the first and the second electrodes are organic electrodes...

01/30/14 - 20140027697 - Magnetic random access memory with switching assist layer
A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of...

01/23/14 - 20140021426 - Magnetic device and method of manufacturing the same
A magnetic device comprises a memory cell comprising a magnetic resistance device and lower and upper electrodes with the magnetic resistance device interposed therebetween to apply current to the magnetic resistance device. The magnetic resistance device includes: a buffer layer for controlling a crystalline axis for inducing perpendicular magnetic anisotropy...

01/23/14 - 20140021427 - Semiconductor device
According to one embodiment, a semiconductor device includes a substrate and an interconnect region on the substrate. The interconnect region includes a first interconnect having a first contact portion whose plane shape is a ring-like plane shape, a second interconnect disposed below the first interconnect, and a contact electrode passing...

01/16/14 - 20140014888 - Thermally-confined spacer pcm cells
A memory device includes an array of contacts and a patterned insulating layer over the array of contacts. The patterned insulating layer includes a trench. The trench includes a sidewall aligned over a plurality of contacts in the array. A plurality of bottom electrodes on a lower portion of the...

01/16/14 - 20140014889 - Semiconductor devices and methods of fabricating the same
A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating...

12/12/13 - 20130328005 - Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the same
A semiconductor device includes a substrate extending in a horizontal direction. An active pillar is present on the substrate extending in a vertical direction relative to the horizontal direction of extension of the substrate. A variable resistive pattern is present on the substrate extending in the vertical direction along the...

12/05/13 - 20130320283 - Memory arrays and methods of forming an array of memory cells
A method of forming an array of memory cells includes forming lines of covering material that are elevationally over and along lines of spaced sense line contacts. Longitudinal orientation of the lines of covering material is used in forming lines comprising programmable material and outer electrode material that are between...

11/14/13 - 20130299763 - Variable resistance memory device and method for fabricating the same
A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a...

10/24/13 - 20130277635 - Semiconductor device and its manufacturing method
In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The...

09/26/13 - 20130248795 - Nonvolatile memory device and method for manufacturing the same
According to one embodiment, a nonvolatile memory device includes a first function layer. The first function layer includes a first electrode layer, a second electrode layer, and a variable resistance layer. The second electrode layer is opposed to the first electrode layer. The variable resistance layer is provided between the...

09/26/13 - 20130248796 - Nonvolatile memory device and method for manufacturing same
According to one embodiment, a nonvolatile memory device includes a first wiring layer. The device includes a second wiring layer intersecting with the first wiring layer. And the device includes a first memory layer provided at a position where the first wiring layer and the second wiring layer intersect. And...

09/12/13 - 20130234086 - Semiconductor memory device
A semiconductor memory device according to an embodiment comprises a semiconductor layer, a variable resistance layer, a sidewall layer, and a buried layer. The semiconductor layer functions as a rectifying device. The variable resistance layer is provided above or below the semiconductor layer and reversibly changes its resistance. The sidewall...

09/12/13 - 20130234087 - Non-volatile resistance change device
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09/12/13 - 20130234088 - Semiconductor device
According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film...

08/29/13 - 20130221306 - Variable resistive memory device
A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell...

08/22/13 - 20130214230 - Memory structures, memory arrays, methods of forming memory structures and methods of forming memory arrays
Some embodiments include methods of forming memory structures. An electrically insulative line is formed over a base. Electrode material is deposited over the line and patterned to form a pair of bottom electrodes along the sidewalls of the line. Programmable material is formed over the bottom electrodes, and a top...

08/08/13 - 20130200320 - Self-isolated conductive bridge memory device
A conductive-bridge random access memory device is disclosed comprising a second metal layer configured to provide second metal cations; a layer of insulator adjacent to the second metal layer; the layer of insulator comprising a layer of first insulator and a layer of second insulator; the layer of second insulator...

07/18/13 - 20130181180 - Semiconductor device
A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an...

07/11/13 - 20130175490 - Nonvolatile semiconductor memory device and method of manufacturing the same
According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion...

07/11/13 - 20130175491 - Semiconductor devices and methods of manufacturing the same
Semiconductor devices, and methods of manufacturing the same, include a field region in a semiconductor substrate to define an active region. An interlayer insulating layer is on the semiconductor substrate. A semiconductor pattern is within a hole vertically extending through the interlayer insulating layer. The semiconductor pattern is in contact...

07/04/13 - 20130168628 - Variable resistance memory device and method for fabricating the same
A variable resistance memory device includes a first trench extending in a first direction formed in a first insulation layer, a first conductive layer in the first trench, a protective layer over the first conductive layer in the first trench, a second insulation layer over the first insulation layer and...

05/30/13 - 20130134371 - Phase-change random access memory device and method of manufacturing the same
A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat...

05/30/13 - 20130134372 - Semiconductor device and method of manufacturing the same
According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to...

05/23/13 - 20130126812 - Memory cells, integrated devices, and methods of forming memory cells
Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common...

02/07/13 - 20130032775 - Mram with sidewall protection and method of fabrication
BEOL memory cells are described that include one or more sidewall protection layers on the memory device (including, for example, an MTJ element) deposited prior to interconnect via etching to prevent the formation of electrical shorts between layers. One embodiment uses a single layer sidewall protection sleeve that is deposited...

01/31/13 - 20130026434 - Memristor with controlled electrode grain size
A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second...

01/03/13 - 20130001494 - Memory cell
A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that...

12/27/12 - 20120326109 - Phase change memory cell and phase chage memory
A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase...

12/27/12 - 20120326110 - Phase change memory devices and methods of manufacturing the same
A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on...

12/06/12 - 20120305872 - Phase-change memory device including a vertically-stacked capacitor and a method of the same
A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes a phase change memory structure, and the vertically-stacked capacitor structure electrically connected to the phase change memory structure and comprising a first capacitor and a second capacitor that...

12/06/12 - 20120305873 - Vertical interconnect structure, memory device and associated production method
The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is...

11/29/12 - 20120298945 - Nonvolatile semiconductor memory device and manufacturing method thereof
A nonvolatile semiconductor memory device of the present invention includes a substrate (1), first wires (2), memory cells each including a resistance variable element (5) and a portion of a diode element (6), second wires (11) which respectively cross the first wires (2) to be perpendicular to the first wires...

11/29/12 - 20120298946 - Shaping a phase change layer in a phase change memory cell
A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard...

11/08/12 - 20120280195 - Resistance variable memory cells and methods
Resistance variable memory cells and methods are described herein. One or more methods of forming a resistance variable memory cell include forming a silicide material on a terminal of a select device associated with the resistance variable memory cell, forming a modified region of the silicide material by modifying a...

11/08/12 - 20120280196 - Electroforming free memristor
An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material (112) and reactive particles (114)...

11/08/12 - 20120280197 - Flat lower bottom electrode for phase change memory cell
A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is...

09/27/12 - 20120241704 - Lateral phase change memory
A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a...

09/13/12 - 20120228573 - Memory cell constructions, and methods for fabricating memory cell constructions
Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient of expansion than the programmable material. A retaining shell may be formed adjacent the programmable material. The memory cell may be thermally...

08/23/12 - 20120211715 - Semiconductor device including phase change material and method of manufacturing same
Disclosed herein is a device that includes: an interlayer insulation film having a through hole; and a phase change storage element provided in the through hole. The phase change storage element includes: an outer electrode being a conductive film of cylindrical shape and being formed along an inner wall of...

08/16/12 - 20120205605 - Organic redox active compounds with reversible storage of charges and substrates and molecular memory devices comprising them
An organic redox active compound with reversible storage of charge is disclosed. The material characterized by a formula R-M-Y-T. According to some aspects, R represents a deconjugating group, M represents an organic redox active fragment, not comprising any metal ion or metal, capable of reversibly storing at least one charge,...

07/12/12 - 20120175580 - Variable resistance memory
A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a...

07/05/12 - 20120168704 - Method of etching a programmable memory microelectronic device
A method of etching a programmable memory microelectronic device (10) having a substrate covered with at least one of the following layers in succession: a first electrode (2) based on a first metallic element; a layer (4) of chalcogenide doped with a second metallic element; a second electrode (5) based...

05/31/12 - 20120132879 - Nonvolatile memory device and method of manufacturing the same
Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection...

03/22/12 - 20120068136 - Phase change memory device, storage system having the same and fabricating method thereof
Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact...

03/15/12 - 20120061637 - 3-d structured nonvolatile memory array and method for fabricating the same
The present invention relates to a field of nonvolatile memory technology in ULSI circuits manufacturing technology and discloses a 3D-structured resistive-switching memory array and a method for fabricating the same. The 3D-structured resistive-switching memory array according to the invention includes a substrate and a stack structure of bottom electrodes/isolation dielectric...

03/15/12 - 20120061638 - Memory element and memory device
There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory...

02/16/12 - 20120037871 - Novel bifunctional molecules comprising a cycloalkyne or heterocycloalkyne group and a redox group
The invention relates to compounds comprising a cycloalkyne or heterocycloalkyne group and a redox group. Said compounds are of general formula (I) wherein Z is a cycloalkyne or heterocycloalkyne with at least 8 links, optionally substituted by a halogen atom or a linear or branched C1 to C5 alkyl, A...

01/12/12 - 20120007031 - Phase change memory cell with heater and method therefor
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at...

12/29/11 - 20110315942 - Solid-state memory
A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to...

12/15/11 - 20110303887 - Memory storage device and method of manufacturing the same
A memory storage device includes: a lower electrode formed to be separated for each of memory cells; a memory storage layer formed on the lower electrode and capable of recording information according to a change in resistance; and an upper electrode formed on the memory storage layer, wherein the memory...