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Etching A Substrate: Processes > Nongaseous Phase Etching Of Substrate Nongaseous Phase Etching Of SubstrateNongaseous Phase Etching Of Substrate patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/17/08 - 20080011717 - Chemical etch solution and technique for imaging a device's shallow junction profile The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a ... 01/10/08 - 20080006605 - Method of manufacturing a porous resin substrate having perforations and method of making a porous resin substrate including perforations having electrically conductive wall faces A method of manufacturing a perforated porous resin substrate, the method including the following steps: Step 1 of forming at least one perforation penetrating in the thickness direction from a first surface to a second surface in a porous resin substrate made of a resin material containing a fluoropolymer; Step ... 01/10/08 - 20080006604 - Devices and methods for using electrofluid and colloidal technology At least one exemplary embodiment is directed to a device that uses a charged photoresist which is subsequently patterned by electric and/or magnetic fields and subsequently exposed and developed to provide an etchable pattern in a semiconductor substrate. ... 01/03/08 - 20080000877 - Method for fabricating soft mold and pattern forming method using the same A method for forming a soft mold includes providing a master mold having at least one pattern thereon, forming pre-polymer layer on the master mold, applying water on the pre-polymer layer, hardening the pre-polymer layer to form a soft mold, removing water, and separating the soft mold from the master ... 11/08/07 - 20070257011 - Advanced process control for low variation treatment in immersion processing The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period ... 11/08/07 - 20070257010 - Method and composition for selectively stripping nickel from a substrate A method of stripping nickel from a printed wiring board comprises providing a printed wiring board with a nickel deposit on a surface and contacting the nickel deposit with phosphate ions and an oxidizer. An aqueous solution comprises ammonium ions, phosphate ions and an oxidizing agent present in amounts effective ... 10/04/07 - 20070228011 - Novel chemical composition to reduce defects A chemical composition and methods to remove defects while maintaining corrosion protection of conductors on a substrate are described. The composition includes a conductive solution, a corrosion inhibitor; and a surfactant. A surfactant-to-inhibitor ratio in the composition is a function of a metal. The surfactant is an anionic surfactant, a ... 10/04/07 - 20070228010 - Systems and methods for removing/containing wafer edge defects post liner deposition A method removes and/or contains edge residue. A wafer comprised of a semiconductor material having a top surface, a bottom surface and an edge surface is provided. The bottom surface and the top surface are substantially planar and the edge surface is non-planar. Residue can be located on the edge ... 09/27/07 - 20070221624 - Electron emission device, method of manufacturing the electron emission device, and electron emission display using the electron emission device An electron emission device including a first electrode, an electron emission region formed on the first electrode, and a second electrode disposed on the first electrode with an insulating layer interposed between the first and second electrodes. The insulating layer and the second electrode are provided with openings for exposing ... 09/06/07 - 20070205181 - Substrate processing method Disclosed is a substrate processing method that dissolves and deforms a photoresist film having a first pattern formed on a substrate to reshape the resist film into a second pattern. The method includes: evacuating a processing chamber, thereby reducing an internal pressure of the processing chamber from a standard pressure ... 08/09/07 - 20070181533 - Process for cleaning aluminum and aluminum alloy surfaces with nitric acid and chromic acid-free compositions A process for cleaning (e.g., desmutting) an aluminum surface, using compositions free of nitric acid and chromic acid and comprising, in one embodiment, an oxidant and at least one mineral acid salt. In another embodiment, the process uses a composition free of nitric acid and chromic acid and comprising an ... 08/09/07 - 20070181532 - Cmp clean process for high performance copper/low-k devices A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes ... 08/02/07 - 20070175862 - Anisotropic etching agent composition used for manufacturing of micro-structures of silicon and etching method An anisotropic etching agent composition for manufacturing of micro-structures of silicon comprising an alkali compound and hydroxylamines; an anisotropic etching method with the use of the etching agent composition. The alkali compound is preferably tetramethylammonium hydroxide, and the hydroxylamines is preferably at least one kind selected from the group consisting ... 07/19/07 - 20070163997 - Poly etch without separate oxide decap The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may ... 07/12/07 - 20070158307 - Method for selective etching Disclosed is a method of selective etching a first material on a substrate with a high selectivity towards a second material by flowing a liquid etchant across a substrate surface at a flow sufficient fast to generate a minimum mean velocity v parallel to the substrate's surface. ... 07/05/07 - 20070151949 - Semiconductor processes and apparatuses thereof Methods of semiconductor processing and apparatuses are disclosed. An organic solvent is applied over a surface of a material layer on a substrate in which the material layer includes a short-chain structure. A fluorine-containing solution is applied over the surface of the material layer to substantially remove the material layer ... 07/05/07 - 20070151948 - Method of selectively stripping a metallic coating A process for chemically stripping a metallic coating on an external surface of a substrate without attacking an internal surface defined by an internal passage within the substrate. Processing steps include depositing within the internal passage a thermally-decomposable wax having a melting temperature above 75° C. so as to mask ... 06/28/07 - 20070145009 - Etch compositions and methods of processing a substrate The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, ... 06/28/07 - 20070145008 - Techniques of anisotropic wet etch micromachining for comb drive transducers and resonance frequency reduction Wet anisotropic etching techniques are well known micromachining apparatus in MEMS technology. The wet anisotropic etchant etch some of the material crystal planes faster than the other. For example the (001) planes are etched much faster than the (111) planes. The final shape is dependent upon the etch mask and ... 06/21/07 - 20070138139 - Method of manufacturing semiconductor device, acid etching resistance material and copolymer (in the general formula (2), R5 is a hydrogen atom or methyl group). ... 06/21/07 - 20070138138 - Hot rolled steel sheet excellent in chemical convertibility and method of production of the same The present invention provides a high strength hot rolled steel sheet raised in Si content, wherein a conversion coating can be formed homogeneously over the entire surface of the steel sheet, no new step is added in the production of the steel sheet, and quality control is also facilitated, comprising, ... 06/07/07 - 20070125751 - Stripping device and stripping apparatus A stripping apparatus has a simplified structure for stripping a supporting plate from a layered structure, occupies less space, and strips a supporting plate in a shorter period of time. The stripping apparatus comprises a transfer robot, a cassette, a stripping device and a cleaning device which surround the transfer ... 05/24/07 - 20070114208 - Substrate treating method and apparatus A substrate treating method includes heating a substrate having an ion-implanted film formed on a surface thereof in an oxygen environment, and removing the film from the surface of the substrate by supplying a treating solution containing sulfuric acid and hydrogen peroxide solution or a treating solution containing ozone to ... 05/17/07 - 20070108162 - Implant surface preparation The surface of a device that is surgically implantable in living bone is prepared. The device is made of titanium with a native oxide layer on the surface. The method of preparation comprises the steps of removing the native oxide layer from the surface of the device and performing further ... 03/08/07 - 20070051700 - Composition for cleaning substrates and method of forming gate using the composition Provided are a substrate cleaning composition including a fluoride compound, an inorganic acid, and deionized water, and a method of forming a gate using the same. The fluoride compound is one of HF, NH4F, and a combination thereof, and the inorganic acid is one of HNO3, HCI, HCIO4, H2SO4, or ... 03/01/07 - 20070045231 - Resist removing method and resist removing apparatus In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface. ... 02/15/07 - 20070034605 - Evaporation control using coating A novel arrangement and method for depositing evaporation control agents so as to coat immersion lithographic solutions which are employed on the surface of semiconductor wafers in connection with the etching of the surfaces of the wafer through the intermediary of an immersion lithographic process. ... 01/18/07 - 20070012662 - Solution for wet treatment of hafnium containing materials, use of the solution and a wet treatment process It is one object to devise a solution which is suitable for a wet treatment of Hafnium containing high-k materials. Furthermore, it is an object to devise a use of this solution in the field of semiconductor device manufacturing. It is also an objective of the invention to devise a ... 01/04/07 - 20070000871 - Floor-etching solution The present invention is directed toward a floor-etching solution comprising a ketone such as 1-methyl-2-pyrrolidinone, a surfactant, and water. The solution further comprises a viscosity such that it may be applied to a surface by spraying, spritzing, or other similar application methods. The solution further comprises an evaporation rate low ... 12/28/06 - 20060289386 - Etchant, method of etching, laminate formed thereby, and device An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet ... 12/21/06 - 20060283837 - Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the water and the ozone being at ... 12/14/06 - 20060278613 - Method and device for removing material from a three-dimensional surface in a multi-layered manner by means of a laser, using a polygon network which is described by a mathematical function and represents the surface The invention relates to a method for removing material from a three-dimensional surface (1) of any shape in a single or multilayered manner by means of a material removing agent (9), such as a laser, that acts in points on the a surface and where a surface structure (2) is ... 11/23/06 - 20060261038 - Single wafer cleaning method to reduce particle defects on a wafer surface Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the ... 11/16/06 - 20060255013 - Method and device for producing a system having a component applied to a predetermined location of a surface of a substrate A method for producing a system with a substrate with a surface and a component applied to a predetermined location of the surface of the substrate includes a step of generating a liquid volume containing the component and a step of applying the liquid volume containing the component on the ... 11/16/06 - 20060255012 - Removal of particles from substrate surfaces using supercritical processing A method and system is described for treating a substrate to remove particles using a supercritical fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for removing particles from the substrate surface. The process chemistry comprises an etchant, a surfactant ... 10/26/06 - 20060237392 - Polymer remover Compositions useful for the removal of post-plasma processing polymeric residue from substrates, such as electronic devices, are provided. Also provided are methods of removing the post-plasma processing residues and methods of manufacturing integrated circuits using the compositions. ... 10/12/06 - 20060226122 - Selective wet etching of metal nitrides In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG, ... 10/05/06 - 20060219661 - Surface treatment methods for implants made of titanium or titanium alloy A method of producing a generally uniformly roughened surface on Ti 6/4 alloy or titanium for contact with living bone comprises exposing the Ti 6/4 alloy or titanium in an aqueous solution of citric acid and hydrofluoric acid for a suitable time period to remove the native oxide from the ... 09/14/06 - 20060201913 - Methods and compositions for removing group viii metal-containing materials from surfaces A method and composition for removing Group VIII metal-containing materials from a surface (preferably, a platinum-containing, and more preferably, a platinum-rhodium-containing surface) involves the use of a mixture of phosphoric acid, sulfuric acid, nitric acid, and hydrochloric acid. ... 09/14/06 - 20060201912 - Method for reducing linewidth and size of metal, semiconductor or insulator patterns Disclosed herein is a method for forming metal, semiconductor or insulator patterns. The method comprises the steps of: (S302) forming metal, semiconductor or insulator patterns 202 with the larger sizes or linewidths by the prior method; and (S306) reducing the sizes or linewidths of the patterns 202 by etching the ... 08/31/06 - 20060191869 - Method for roughening copper surfaces for bonding to substrates The invention is directed to a method and composition for providing roughened copper surfaces suitable for subsequent multilayer lamination. A smooth copper surface is contacted with an adhesion promoting composition under conditions effective to provide a roughened copper surface, the adhesion promoting composition consisting essentially of an oxidizer, a pH ... 08/31/06 - 20060191868 - Concept for the wet-chemical removal of a sacrificial material in a material structure In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical ... 08/24/06 - 20060186088 - Etching and cleaning bpsg material using supercritical processing A method for etching and removing post-etch residue from a BPSG material is disclosed. In accordance with the method of the present invention, the BPSG material is etched and the residue is removed from the substrate structure using supercritical solutions. ... 08/17/06 - 20060180574 - Thin film support substrate for use in hydrogen production filter and production method of hydrogen production filter In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal ... 08/17/06 - 20060180573 - Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fluorosilicic acid. ... 08/17/06 - 20060180572 - Removal of post etch residue for a substrate with open metal surfaces A method and system is described for treating a substrate having an open metal surface thereon using a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for removing residues from the substrate surface. The process chemistry comprises ... 08/10/06 - 20060175293 - Semiconductor device and method for manufacturing multilayered substrate for semiconductor device A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on ... 07/27/06 - 20060163205 - Substrate processing method and substrate processing apparatus A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and ... 07/27/06 - 20060163204 - Tape removal in semiconductor structure fabrication A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer comprises an adhesive material. The method includes the step of submerging the tape in a liquid chemical comprising monoethanolamine or ... 07/13/06 - 20060151434 - Selective surface texturing through the use of random application of thixotropic etching agents An improved process for predictably treating a substrate surface is provided comprising the use of a pre-selected thixotropic etchants to achieve a superior and predetermined substrate surface. ... 07/06/06 - 20060144822 - Apparatus and method for wet-etching A wet-etching apparatus (20) includes a first etching chamber (213), a second etching chamber (215), and a cleaning chamber (214) located between the first and second etching chambers. The wet-etching apparatus includes the cleaning chamber disposed between the first and second etching chambers. After being etched in the first etching ... 06/15/06 - 20060124590 - Alkali etching liquid for silicon wafer and etching method using same An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including ... 06/08/06 - 20060118522 - Etching composition and use thereof with feedback control of hf in beol clean In a process for making a semiconductor device, a first aqueous mixture is prepared and a fluorine-containing compound is combined with the first aqueous mixture to obtain an etchant composition. A sample of the etchant composition is taken and compared to a standard dilute solution of the fluorine-containing compound to ... 06/08/06 - 20060118521 - Method for etching doughnut-type glass substrates A method for etching doughnut-type glass substrates, which comprises laminating a plurality of doughnut-type glass substrates each having a circular hole at its center so that the circular holes form a cylindrical hole, and applying an etching treatment to inner peripheral edge surfaces of the plurality of the laminated doughnut-type ... 05/18/06 - 20060102591 - Method and system for treating a substrate using a supercritical fluid A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at temperature approximately equal to and exceeding 80° C., which is greater ... 05/18/06 - 20060102590 - Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry. ... 05/04/06 - 20060091110 - Cleaning solution and method for cleaning semiconductor device by using the same The present invention provides a cleaning solution and a method for cleaning a semiconductor device by the same capable of preventing damages on a tungsten layer from the cleaning solution and removing particles. The cleaning solution includes a deionized water-based ammonia solution; a surfactant added to the ammonia solution; and ... 04/06/06 - 20060070979 - Using ozone to process wafer like objects The present invention relates to methods of processing wafer-like objects (e.g., having an exposed copper feature and/or including low-k dielectric material) with ozone. In certain preferred embodiments, a base is also used to process the wafer-like object(s). ... 03/23/06 - 20060060567 - Method for directly forming a cutter mold with double etching and apparatus thereof A method for directly forming a cutter mold with double etching and an apparatus thereof includes the following steps: a metal plate for being made the cutter mold is tightly pressed with a light-resisting agent membrane first, an image of cutter mold drawing, which provides lines with widths thereof being ... 03/16/06 - 20060054597 - Wet etchant composition and method for etching hfo2 and zro2 A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent present at about 0.1 weight percent to ... 03/09/06 - 20060049141 - Method of manufacturing metal cover with blind holes therein An exemplary method of manufacturing a metal cover (1) with blind holes (3) therein includes: step (60), preparing a metal substrate; step (62), covering the metal substrate with a protective film formed by electrophoretic deposition; step (64), forming holes in the protective film according to an intended pattern of the ... 03/09/06 - 20060049140 - Method and apparatus for liquid etching A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a ... 03/02/06 - 20060043070 - High temperature functioning stripper for cured difficult to remove photoresist coatings A chemical stripping solvent composition is provided for removing cured polymeric isoprene from inorganic substrates comprising normal and isoparaffins exhibiting a high flash point and a sulfonic acid dissolving system. The stripping composition comprises a blend of chemistries, designed to operate at high temperature processing conditions without attack to sensitive ... 03/02/06 - 20060043069 - Mirror etching solution Mirror etching solution is a solution of water and sulfated potash and when applied to the electroplated surface on the back, or non-reflective mirror surface effectively simulates the appearance of a tarnished or deteriorated “antique” mirror. The electroplated surface applied to the back of new mirrors is normally sealed with ... 01/26/06 - 20060016786 - Method and apparatus for removing sic or low k material film The present invention disclosed a method and apparatus for removing a SiC or a low k dielectric film, wherein the SiC or low k dielectric film is deposited on a substrate. The method comprising: Process the low k dielectric film or SiC film with high temperature oxidation, such as wet ... 01/26/06 - 20060016785 - Composition for removing photoresist and/or etching residue from a substrate and use thereof Compositions containing certain organic solvents comprising at least 50% by weight of a glycol ether and a quaternary ammonium compound are capable of removing residues such as photoresist and/or etching residue from an article. ... 01/19/06 - 20060011584 - Etchant and etching method An etching solution having an etch rate of 2 Å/minute or greater for a film having a relative dielectric constant of 8 or higher (a High-k film, and whose ratio of the etch rate of a thermal oxide (THOX) film to that of a High-k film is ([THOX etch rate]/[High-k ... 01/12/06 - 20060006141 - Biomedical electrochemical sensor array and method of fabrication Methods for fabricating a plurality of sensors on a flexible substrate, with each sensor having associated electrodes and at least one well include (a) providing a flexible substrate material layer having a surface area defined by a length and width thereof; (b) forming a plurality of sensor elements onto the ... 12/22/05 - 20050279732 - Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench and at the trench opening is removed ... 12/15/05 - 20050274695 - Method of forming a molding surface for a shingle mold Improvements in composite shingle manufacturing are realized through the use of an acid etching solution along with machining to generate a molding surface particularly well suited for the molding of shingles having the look of “natural” materials, such as slate. Upon the selection of a specific pattern that will define ... 12/01/05 - 20050263489 - Ruthenium silicide wet etch A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed. ... 12/01/05 - 20050263488 - Etching system and method for treating the etching solution thereof The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the ... 11/24/05 - 20050258138 - Wafer recovering method, wafer, and fabrication method In order to use an etching solution of less complicated composition for recovering used wafers, embodiments of the present invention provide a recovering method, and also provide a kind of wafer, which is used as a process control wafer or dummy wafer, and fabrication methods. In one embodiment, a wafer-recovering ... 11/10/05 - 20050247673 - Confinement of fluids on surfaces The invention is directed to a device for applying a fluid to a surface, the device comprising a first conduit for directing a flow of a first fluid towards the surface and a second conduit for directing a flow of a second fluid away from the surface, the first conduit ... 11/03/05 - 20050242062 - Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includes placing the target substrate on the substrate holding mechanism, laying out an auxiliary ... 10/27/05 - 20050236367 - Compositions and processes for format-flexible, roll-to-roll manufacturing of electrophoretic displays The invention is directed to compositions and processes useful for the roll-to-roll manufacturing of electrophoretic displays. ... 10/13/05 - 20050224459 - Etching solution, etched article and method for etched article An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 10O Å/min or less at 25° C., and an etching rate ratio:etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less. ... 09/29/05 - 20050211673 - Amorphous material processing method There are provided a method of processing an amorphous material which is capable of forming surface projections of uniform height in desired positions on the amorphous material, and a magnetic disk substrate using the amorphous material. A predetermined pressure is applied to selected parts of a surface of an amorphous ... 09/15/05 - 20050199587 - Non-chrome plating on plastic The invention comprises a process of preparing a non-conductive substrate for subsequent metalization. The process replaces the traditional chromic acid etching step with an etching solution comprising a permanganate and a mineral acid. The process also includes a novel activation solution comprising a palladium salt and an amine complexor. The ... 09/08/05 - 20050194356 - Removing photoresist from a workpiece using water and ozone and a photoresist penetrating additive Photoresist is quickly removed from a wafer using a process liquid including water, ozone and a photoresist penetrating additive, such as ammonium hydroxide. The penetrating additive creates cracks in the photoresist layer. The process liquid moves through the cracks and etches away the underlying adhesion layer. The photoresist layer is ... 09/01/05 - 20050189321 - Method for removing organic material from a substrate and for oxidizing oxidizable material thereon Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are ... ### FreshPatents.com Support |