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Etching A Substrate: Processes > Gas Phase Etching Of Substrate > With Measuring, Testing, Or Inspecting With Measuring, Testing, Or InspectingWith Measuring, Testing, Or Inspecting patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.09/27/07 - 20070221620 - Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and ... 09/27/07 - 20070221619 - Etching method Recessing a trench using feed forward data is disclosed. In one embodiment, a method includes providing a region on a wafer including a trench area that includes a trench and a field area that is free of any trench, and a material applied over the region so as to fill ... 08/23/07 - 20070193975 - Using positive dc offset of bias rf to neutralize charge build-up of etch features Apparatus, systems and methods for plasma etching substrates are provided. The invention achieves dissipation of charge build-up on a substrate being plasma etched to avoid notching or twisting in high aspect ratio contents and similar features. Charge build-up on a substrate being etched by plasma etching can be dissipated by ... 08/16/07 - 20070187363 - Substrate processing apparatus and substrate processing method A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The ... 08/09/07 - 20070181528 - Method of etching treatment The formation and adhesion of excessive deposits are suppressed in an etching process in which a resist of the ArF lithography generation and later is used as a mask. In an etching treatment method which is performed, by use of an etching apparatus which has a vacuum chamber 101, means ... 07/05/07 - 20070151946 - Method for monitoring edge bead removal process of copper metal interconnection Disclosed is a method for monitoring an edge bead removal process for a copper metal interconnection. The method includes the steps of (a) forming a copper metal layer on a semiconductor wafer, (b) performing the edge bead removal (EBR) process of removing the copper metal layer formed in an edge ... 06/28/07 - 20070145005 - Controlling system and method for operating the same The invention is directed to a method for controlling a critical dimension of a patterned photoresist layer. The method comprises steps of measuring a critical dimension of a raised pattern in a patterned photoresist layer after a photolithography process is performed on the photoresist layer. A determining process is performed ... 06/14/07 - 20070131650 - Plasma chamber wall segment temperature control A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other ... 05/31/07 - 20070119814 - Apparatus and method for detecting an endpoint in a vapor phase etch Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that ... 05/24/07 - 20070114206 - Plasma chamber wall segment temperature control A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other ... 05/03/07 - 20070095789 - Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes ... 05/03/07 - 20070095788 - Method of controlling a chamber based upon predetermined concurrent behavoir of selected plasma parameters as a function of selected chamber paramenters The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch ... 04/26/07 - 20070090091 - Method for controlling uniformity of thin films fabricated in processing systems A method for spatial uniformity control in thin film processing is devised which is applicable to any film quality (thickness, composition, microstructure, electrical properties, etc.) as well as to all deposition systems (CVD, PVD, etch, ALD, etc.) where the substrate is rotated to improve uniformity of the deposited thin films. ... 04/12/07 - 20070080140 - Plasma reactor control by translating desired values of m plasma parameters to values of n chamber parameters The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for ... 04/12/07 - 20070080139 - Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural plasma parameters by controlling chamber parameters of source power, bias power and chamber pressure. The plasma parameters may be selected from of a group including ... 04/12/07 - 20070080138 - Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters The invention involves a method of characterizing a plasma reactor chamber through the behavior of many selected plasma parameters as functions of many selected chamber parameters. The plasma parameters may be selected from a group including ion density, wafer voltage, etch rate and wafer current or other plasma parameters. The ... 04/12/07 - 20070080137 - Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure The invention involves a method of characterizing a plasma reactor chamber through the behavior of plasma parameters selected from a group comprising ion density, wafer voltage, etch rate, wafer current, as functions of chamber parameters of source power, bias power and chamber pressure. The method begins by performing two steps ... 04/05/07 - 20070075037 - Dimension monitoring method and system A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first ... 04/05/07 - 20070075036 - Method and apparatus for measuring plasma density in processing reactors using a short dielectric cap An apparatus for measuring plasma density of a plasma processing reactor, comprises a stationary compact probe having a short dielectric cap with a short coaxial cable inserted therein and having an open metal antenna tip. The probe can be utilized to determine resonant plasma frequency near its tip location. Two ... 03/01/07 - 20070045228 - Etching depth measuring device, etching apparatus, and etching depth measuring method An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part ... 01/25/07 - 20070017896 - Method for controlling a process for fabricating integrated devices A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch ... 12/28/06 - 20060289384 - Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the ... 12/21/06 - 20060283835 - Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power A workpiece is processed in a plasma reactor chamber in accordance with desired values of two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power. First, the chamber is characterized by performing the ... 11/30/06 - 20060266735 - Plasma generation and control using dual frequency rf signals A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a ... 11/23/06 - 20060261036 - Method for patterning on a wafer having at least one substrate for the realization of an integrated circuit A method is provided for patterning a wafer comprising at least one substrate for the manufacture of an integrated circuit. The method comprises: etching at least one portion of the substrate with a reactive gas plasma to obtain an optical emission signal, resulting from the products of the reaction between ... 11/16/06 - 20060255010 - Method and system for line-dimension control of an etch process A method and system for controlling a dimension of an etched feature. The method includes: measuring a mask feature formed on a top surface of a layer on a substrate to obtain a mask feature dimension value; and calculating a mask trim plasma etch time based on the mask feature ... 11/09/06 - 20060249479 - Method for inspection, proces for making analytic piece, method for analysis, analyzer, process for producing soi wafer, and soi wafer An inspection method is provided for accurate measurement of conductive materials as defects within a silicon oxide film base material embedded in a SOI wafer sample. In the method, the internal state of a sample 2 is inspected by measuring an conductive material within an insulating base material 11 formed ... 10/12/06 - 20060226117 - Phase change based heating element system and method A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection ... 08/17/06 - 20060180570 - Application of in-situ plasma measurements to performance and control of a plasma processing system A system and method for managing a plasma system is described. In one embodiment the method includes measuring at least one aspect of a state of plasma in the plasma system so as to obtain plasma state data, receiving subsystem data, which is indicative of at least one subsystem of ... 08/03/06 - 20060169670 - Method for etching a sample and etching system To reduce the use of expensive reactive gas, which is frequently also environmentally harmful, during etching by a plasma the reactive gas is first fed through a reaction chamber of an etching system for stabilization, until all the process parameters are adjusted to their setpoints. During this stabilization, all of ... 07/20/06 - 20060157446 - End point detection method for plasma etching of semiconductor wafers with low exposed area A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as provided by a sensor. All or less than all of the data during a first time period may be used to ... 07/20/06 - 20060157445 - Gas setting method, gas setting apparatus, etching apparatus and substrate processing system Mixing ratio and flow rate of a first gaseous mixture supplied to a central portion of the substrate are set. Subsequently, etching is performed by changing a mixing ratio of a second gaseous mixture supplied to an outer peripheral portion of the substrate while a setting of the first gaseous ... 07/13/06 - 20060151430 - Method and system for processing multi-layer films A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and ... 07/13/06 - 20060151429 - Plasma processing method A plasma processing method utilizing a plasma processing apparatus comprising a control unit and a processing chamber for performing a plasma processing in which the processing chamber comprises a plasma status detecting unit for detecting the processing status in the processing chamber and outputting plural output signals. The method includes ... 07/06/06 - 20060144818 - System for detecting film quality variation and method using the same A system includes a throttle valve moving in response to a pressure present in a vacuum pump line for controlling the pressure of the vacuum pump line based on the movement of the throttle valve; a monometer for detecting the movement of the throttle valve and outputting movement data indicative ... 07/06/06 - 20060144817 - Low-pressure removal of photoresist and etch residue A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first ... 06/29/06 - 20060138082 - Method and apparatus for determining consumable lifetime A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system ... 05/04/06 - 20060091108 - Method and apparatus for controlling etch processes during fabrication of semiconductor devices A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such ... 04/13/06 - 20060076315 - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus A semiconductor device manufacturing method and a semiconductor device manufacturing apparatus which enable to detect an etching end-point with high accuracy are provided. In etching of a lower layer formed on a semiconductor wafer using a mask which comprises a plurality of patterns extending in a predetermined direction (line-and-space patterns) ... 03/30/06 - 20060065625 - Periodic patterns and technique to control misalignment between two layers A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. ... 03/30/06 - 20060065624 - Etching method of organic insulating film This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, ... 03/30/06 - 20060065623 - Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma ... 03/02/06 - 20060043062 - Methods of downstream microwave photoresist removal and via clean, particularly following stop-on tin etching A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined ... 02/23/06 - 20060037938 - Method and apparatus for detecting endpoint The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint signal by filtering the at least one endpoint signal, wherein the ... 02/16/06 - 20060032835 - Method and apparatus for simulating standard test wafers A method and apparatus are provided for simulating a standard wafer in semiconductor manufacturing equipment. The apparatus includes a support layer suitable for being handled by the semiconductor manufacturing equipment. Applied to the support layer is a mixture including a process agent and a material. During use, the present invention ... 02/02/06 - 20060021970 - Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters A RF sensor for sensing and analyzing parameters of plasma processing. The RF sensor is provided with a plasma processing tool and an antenna for receiving RF energy radiated from the plasma processing tool. The antenna is located proximate to the plasma processing tool so as to be non-invasive. Additionally, ... 01/05/06 - 20060000800 - Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units A sample processing method for processing a sample by introducing a gas into a vacuum vessel and generating plasma in the vacuum vessel. The sample processing method includes the steps of measuring an intensity of light emitted from a light-emitting diode in the vacuum vessel, at the outside of the ... 01/05/06 - 20060000799 - Methods and apparatus for determining endpoint in a plasma processing system In a plasma processing system, a method of determining a process threshold is disclosed. The method includes exposing a substrate to a plasma process, including a process start portion, a substantially steady state portion, and process end portion. The method also includes collecting a first set of data during the ... 12/01/05 - 20050263485 - Method and apparatus for process control in time division multiplexed (tdm) etch processes The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated ... 12/01/05 - 20050263484 - Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods An apparatus for adjusting an etching area of a semiconductor wafer includes an adjustable shielding plate. The adjustable shielding plate includes a plurality of shielding members. Each of the plurality of shielding members are movable between a first position configured to shield a portion of a semiconductor wafer from an ... 11/17/05 - 20050252884 - Method and system for predicting process performance using material processing tool and sensor data A material processing system including a process tool and a process performance prediction system. The performance prediction system includes sensors coupled to the tool to measure tool data and a controller coupled to the sensors to receive tool data, where the controller is configured to predict the process performance for ... 11/10/05 - 20050247669 - Method for repairing a phase shift mask A method is disclosed for repairing an attenuated phase shift mask. The mask initially has a mask substrate coated with a predetermined shift layer material, a mask pattern layer, and an energy beam resist layer sequentially. After forming a predetermined mask pattern in the mask pattern layer through an energy ... 10/27/05 - 20050236364 - Etching system and etching method An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching ... 10/13/05 - 20050224457 - Method and apparatus for repairing shape, and method for manufacturing semiconductor device using those The invention relates to a method for enabling repair of a defect in a substrate, particularly the invention provides a method and apparatus for enabling repair of a pattern shape in a semiconductor device, which has not been able to be practiced because of lack of a suitable method, and ... 10/06/05 - 20050218115 - Anti-clogging nozzle for semiconductor processing Embodiments of the present invention are directed to reducing clogging of nozzles and to reducing flow variance through the nozzles in a semiconductor processing chamber. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a ... 10/06/05 - 20050218114 - Method and system for performing a chemical oxide removal process A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a reactive gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. An inert gas can, for example, also be introduced ... 10/06/05 - 20050218113 - Method and system for adjusting a chemical oxide removal process using partial pressure A method and system for trimming a feature on a substrate. During a chemical treatment of the substrate, the substrate is exposed to a reactive gaseous chemistry, such as HF/NH3, under controlled conditions. An inert gas can also be introduced with the reactant gaseous chemistry. A process model is developed ... 09/29/05 - 20050211668 - Methods of processing a substrate with minimal scalloping The present invention provides methods of processing a substrate with minimal scalloping. By processing substrates with minimal scalloping, feature tolerance and quality may be improved. An embodiment of the present invention provides a method for etching a feature in a layer through an etching mask by alternating steps of polymer ... 09/29/05 - 20050211667 - Method and apparatus for measurement of thin films and residues on semiconductor substrates A method of sensing properties of materials on a substrate is provided. The method includes scanning along a path defined over a surface of a substrate that can have a film. The substrate is configured to spin when present. The method includes sensing properties of the film at a plurality ... 09/01/05 - 20050189320 - Plasma processing method A plasma processing method for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature controller. The process recipe includes a plurality of temperature setting parameters ... 08/04/05 - 20050167398 - Vacuum processing apparatus and control method therefor There is provided a vacuum processing apparatus and an exhausting apparatus of the vacuum processing apparatus according to which the auxiliary vacuum pump can be made smaller or eliminated, and hence energy-saving and space-saving can be achieved, and moreover the floor space occupied by the exhausting apparatus can be reduced, ... 08/04/05 - 20050167397 - Critical dimension control in a semiconductor fabrication process A method for controlling a critical dimension in an etched structure comprises the steps of: forming a hard mask above a substrate, measuring a critical dimension of the hard mask, and using the measured hard mask critical dimension to control a critical dimension trim operation performed on a circuit trace ... 08/04/05 - 20050167396 - A measurement to determine plasma leakage Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated ... 06/02/05 - 20050115924 - Integration function of rf signal to analyze steady state and non-steady state ( initializaion) of plasmas An integration function of an RF signal (i.e., a Fourier Transform of the voltage, current, phase and up to the fourth respective harmonic) is used to determine and predict etch rate and other etch chamber conditions. Different parts of the RF signal curve are integrated, thereby effectively separating the various ... ### FreshPatents.com Support - Terms & Conditions |