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Chemistry: Electrical And Wave Energy > Apparatus > Coating, Forming Or Etching By Sputtering > Coating > Specified Target Particulars > Target Composition Target CompositionTarget Composition patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.11/01/07 - 20070251821 - Soft magnetic target material There is disclosed a soft magnetic target material with an improved atmospheric resistance without deterioration of magnetic properties. A soft magnetic target material according to the first aspect comprises a Fe—Co based alloy having a Fe:Co atomic ratio of 100:0 to 20:80, wherein the alloy further comprises one or both ... 11/01/07 - 20070251819 - Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets The invention includes methods of forming hollow cathode magnetron sputtering targets. A metallic material is processed to produce an average grain size of less than or equal to about 30 microns and subsequently subjected to deep drawing. The invention includes three-dimensional sputtering targets comprising materials containing at least one element ... 10/18/07 - 20070240981 - Sputter target with high-melting phase A sputter target is made of a material comprising at least two phases or components, wherein at least one minor phase has low solubility in the matrix and has a higher melting point than the matrix. The at least one minor phase has a mean particle size of 10 μm ... 06/28/07 - 20070144900 - Indium oxide-tin oxide powder and sputtering target using the same The indium oxide-tin oxide powder containing an In—Sn oxide as a predominant component is characterized in that the oxide powder contains no compound oxide (In4Sn3O12) detectable through X-ray diffraction and has a SnO2 solid solution amount in In2O3 of 2.3 mass or more, the SnO2 solid solution amount being calculated ... 03/22/07 - 20070062810 - Sputtering system using silver-based alloy An alloy based on silver is provided, which can be used for reflective layers with a reflection factor of >90% in the visible spectral range of daylight and which exhibits a high resistance to corrosion in sulfur-containing atmospheres. The alloy contains about 0.01 to 5 wt % indium and/or tin ... 03/08/07 - 20070051624 - Copper or copper alloy target/copper alloy backing plate assembly Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, ... 03/01/07 - 20070045109 - Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta. ... 01/25/07 - 20070017803 - Enhanced sputter target manufacturing method A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials ... 10/05/06 - 20060219549 - Sputtering target of silver alloy for producing reflection layer of optical recording medium Ag alloy sputtering target of the invention comprises (1) an Ag alloy containing 0.1 to 20 wt % of Zn, 0.1 to 3 wt % of Al, and a balance of Ag, (2) an Ag alloy containing 0.1 to 20 wt % of Zn, 0.1 to 3 wt % of ... 09/21/06 - 20060207876 - Sputtering target and method for preparation thereof A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In ... 07/13/06 - 20060151321 - Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body A hollow cylindrical ceramic sintered body having high density, a process for producing the sintered boy, and a cylindrical ceramic sputtering target having high quality without cracks or breakage, are disclosed. The hollow cylindrical ceramic sintered body is obtained by placing a cylindrical ceramic molding to be sintered on a ... 06/08/06 - 20060118413 - Target and manufacturing method thereof A sputtering target is provided, including a target material and a backing plate that are bonded with a strong adhesion at a reduced cost. The method for bonding the target material and the backing plate does not use a special soldering material, and is therefore cheaper and more reliable. The ... 04/27/06 - 20060086610 - Ge-cr alloy sputtering target and process for producing the same A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a ... 03/02/06 - 20060042938 - Sputter target material for improved magnetic layer A sputter target composed of a ferromagnetic alloy having a base metal, and X, where X is a metal having an atomic diameter of less than 0.266 nm and an oxidation potential greater than the base metal. The base metal may be Fe, Co, or any other ferromagnetic material, and ... 11/24/05 - 20050258033 - Sputtering target A sputtering target which is prepared from a material containing silicon carbide and silicon wherein a volume ratio of silicon carbide ranges from 50% to 70%, when it is defined in such that a volume ratio (%) of silicon carbide=the whole volume of silicon carbide/(the whole volume of silicon carbide+the ... 10/20/05 - 20050230244 - Sputter target material and method of producing the same A sputter target material which is of a sintered material, wherein the sputter target material consists of 0.5 to 50 atomic % in total of at least one metal element (M) selected from the group of Ti, Zr, V, Nb and Cr, and the balance of Mo and unavoidable impurities, ... 07/21/05 - 20050155856 - Tantalum sputtering target and method for preparation thereof Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, ... 06/09/05 - 20050121320 - Copper alloy sputtering target and method for manufacturing the target A copper alloy sputtering target most suitable for formation of an interconnection material of a semiconductor device, particularly for formation of a seed layer, characterized in that the target contains 0.4 to 5 wt % of Sn, and the structure of the target does not substantially contain any precipitates, and ... 06/02/05 - 20050115829 - Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its ... 06/02/05 - 20050115828 - Non-stoichiometric niox ceramic target The subject of the invention is an essentially ceramic target for a sputtering device, especially for magnetically enhanced sputtering, said target comprising predominantly nickel oxide, the nickel oxide NiOx being oxygen-deficient with respect to the stoichiometric composition. ... ### FreshPatents.com Support |