REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Chemistry: Electrical And Wave Energy > Non-distilling Bottoms Treatment > Coating, Forming Or Etching By Sputtering > Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.) > Specified Deposition Material Or Use > Semiconductor SemiconductorSemiconductor patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.06/14/07 - 20070131538 - Systems and methods for back-biased face target sputtering Systems and methods are disclosed for forming stacked substrates with data storage arrays formed on each substrate in an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other ... 05/31/07 - 20070119705 - Back-biased face target sputtering based memory data sensing technique Systems and methods are disclosed to form an exemplary memory structure by flowing argon gas and oxygen gas in a deposition chamber; providing a low oxygen flow rate approximately between 0 and ten percent (10%) of an argon flow rate, a pressure approximately between 2×10−5 Torr and 1×10−3 Torr, and ... 03/15/07 - 20070056846 - Silicon dot forming method and silicon dot forming apparatus A substrate is accommodated in a vacuum chamber provided with a silicon sputter target, a sputtering gas (typically a hydrogen gas) is supplied into the vacuum chamber, a high-frequency power is applied to the gas to form plasma in the chamber, a bias voltage is applied to the target for ... 06/08/06 - 20060118407 - Methods for making low silicon content ni-si sputtering targets and targets made thereby A method for making nickel/silicon sputter targets, targets made thereby and sputtering processes using such targets. Molten nickel is blended with sufficient molten silicon and cast to form an alloy containing trace amounts, up to less than 4.39 wt % silicon, and preferably 2.0 wt % silicon. Preferably, the cast ... 08/11/05 - 20050173240 - Method and device for manufacturing semiconductor or insulator/metallic laminar composite cluster A semiconductor or nonconductor vapor is generated by sputtering targets 11U, 11D in a first sputtering chamber 10, while a metal vapor is generated by sputtering targets 21U, 21D in a second sputtering chamber 20. The semiconductor or nonconductor vapor and the metal vapor are aggregated to clusters during travelling ... ### FreshPatents.com Support |