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Chemistry: Electrical And Wave Energy > Non-distilling Bottoms Treatment > Coating, Forming Or Etching By Sputtering > Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.) Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.)Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.) patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017502 - Ti oxide film having visible light-responsive photocatalytic activites and process for its production A Ti oxide film is produced by a process comprising sputtering a Ti oxide film on a substrate in an atmosphere of at least one gas selected from the group consisting of a rare gas, a nitrogen-containing gas and an oxygen-containing gas within a chamber by means of a sputtering ... 11/08/07 - 20070256927 - Coating apparatus for the coating of a substrate and also method for coating The invention relates to a coating apparatus (1) with a process chamber (2) for the coating of substrate (S) by means of cathode sputtering, said process chamber (2) having an inlet (3) and an outlet (4) for a process gas, for setting up and maintaining a gas atmosphere, as well ... 10/04/07 - 20070227878 - Forming ovonic threshold switches with reduced deposition chamber gas pressure A phase change memory including an ovonic threshold switch may be formed with reduced argon in the ovonic threshold switch. The presence of argon adversely impacts the performance of the ovonic threshold switch. Argon concentration can be reduced by depositing the phase change material for the ovonic threshold switch in ... 09/06/07 - 20070205096 - Magnetron based wafer processing A wafer magnetron includes a support for supporting a wafer; a generator to provide an electric field substantially perpendicular to the wafer surface; and a magnet system for generating a magnetic field, a portion of the magnetic field lines being parallel to the wafer surface. ... 07/12/07 - 20070158183 - Methods and apparatus for purging a substrate carrier In a first aspect, a substrate carrier is provided that includes an enclosure adapted to be sealable and to house at least one substrate. The substrate carrier includes a first port leading into the enclosure and adapted to allow a flow of gas into the enclosure while the substrate carrier ... 07/12/07 - 20070158182 - Silicon dot forming method and apparatus A silicon sputter target is arranged in a silicon dot forming chamber, and a silicon dot formation target substrate is arranged in the chamber. Plasma is formed from a sputtering gas (typically a hydrogen gas) supplied into the chamber, and chemical sputtering is effected on the target with the plasma ... 07/12/07 - 20070158181 - Method & apparatus for cathode sputtering with uniform process gas distribution A method of sputter depositing a substantially circumferentially uniform thin film on a surface of a circular, planar disk-shaped substrate, comprising steps of: (a) providing a cathode sputtering apparatus including: a vacuum chamber; a cathode sputtering source comprising a circularly-shaped sputtering target assembly with a first target having a planar ... 06/14/07 - 20070131537 - System and method for performing semiconductor processing on target substrate A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional ... 05/24/07 - 20070114124 - Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral ... 05/24/07 - 20070114123 - Deposition on charge sensitive materials with ion beam deposition A method is described that involves applying a first voltage to a first mesh located above a wafer. The wafer has a charge sensitive material exposed thereon. The method also involves applying a second voltage to a second mesh located above the wafer. The method also involves depositing a layer ... 05/10/07 - 20070102284 - Small scanned magentron A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation ... 05/10/07 - 20070102283 - Pvd method to condition a substrate surface A method for conditioning a surface of a substrate, particularly substrates useful in a fuel cell, is disclosed. In one aspect, a method is disclosed for treating a substrate to increase the substrate's resistance to acid etching. The method includes depositing a layer of etch-resistant material via a PVD process ... 12/21/06 - 20060283703 - Bonding of target tiles to backing plate with patterned bonding agent A target assembly including a plurality of target tiles bonded to a backing plate by adhesive, for example of indium or conductive polymer, filled into recesses in the backing plate formed beneath each of the target tiles. A sole peripheral recess formed as a rectangular close band may be formed ... 12/07/06 - 20060272937 - Method & apparatus for formation of oriented magnetic films for magnetic recording media A method of forming a layer of a magnetic material with radially oriented magnetic anisotropy, comprising sequential steps of providing a circular, annular disk-shaped substrate having an inner diameter and an outer diameter, forming a layer of a magnetic material with non-radially oriented magnetic anisotropy over at least one surface ... 10/05/06 - 20060219547 - Vertical production of photovoltaic devices The present invention provides a photovoltaic thin-film solar cell produced by a providing a vertically oriented pallet based substrate to a series of reaction chambers where layers can be sequentially formed on the pallet. ... 09/28/06 - 20060213764 - Ionized physical vapor deposition (ipvd) process An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is ... 07/20/06 - 20060157340 - Transfer chamber for vacuum processing system A transfer chamber for a substrate processing tool includes a main body having side walls adapted to couple to at least one processing chamber and at least one load lock chamber. The main body houses at least a portion of a robot adapted to transport a substrate between the processing ... 07/13/06 - 20060151312 - Method for producing a multilayer coating and device for carrying out said method A method for producing one or more coating on a displaccable substrate in a vacuum chamber with the aid of a residual gas, by means of a sputtering device said coating being formed from at least two constituents, whereby a sputtering material of the sputtering device constitutes at least one ... 06/08/06 - 20060118406 - Sputtered transparent conductive films A hollow cathode sputtering apparatus and related method for introducing dopants into a sputtered coating is provided. The method utilizes a sputter reactor which includes a cathode channel that allows a gas stream to flow therein and a flow exit end from which gases may flow out of and towards ... 06/01/06 - 20060113182 - Driving frequency modulation system and method for plasma accelerator A plasma accelerator (300) is disclosed that has three separate sections of coils (301-316) disposed outside the plasma chamber (321). The separate sections of coils include an initial discharge section (309-316), an acceleration section (303-308), and a nozzle section (301-302). Each section of coils is driven by signals of a ... 05/04/06 - 20060091000 - Novel thiosilicate phosphor compositions and deposition methods using barium-silicon vacuum deposition sources for deposition of thiosilicate phosphor films The present invention relates to novel thiosilicate phosphor compositions. The invention is further a physical vapour deposition method for the deposition of rare earth activated thiosilicate phosphor compositions comprising providing at least one or more source materials where the source materials may comprise a barium silicon alloy, an intermetallic barium ... 05/04/06 - 20060090999 - Sputter coating system A sputter coating system comprises a vacuum chamber, means for generating a vacuum in the vacuum chamber, a gas feed system attached to the vacuum chamber, a gas plasma forming system attached to the vacuum chamber, a system for confining and guiding a gas plasma within the vacuum chamber, and ... 04/13/06 - 20060076232 - Magnetron having continuously variable radial position A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to ... 04/13/06 - 20060076231 - Method for magnetron sputter deposition A method for depositing a coating on an interior surface of a hollowed workpiece. The method comprises providing the hollowed workpiece in a vacuum chamber, the hollowed workpiece comprising an interior surface substantially defining a bore having a longitudinal axis; positioning a magnetron within thed bore along substantially the length ... 04/13/06 - 20060076230 - Sputtering target fixture A method and apparatus for sputter deposition. The method including: providing a sputter target having a back surface and an exposed front surface; providing a source of magnetic field lines, the magnetic field lines extending through the sputter target from the back surface to the exposed front surface of the ... 03/30/06 - 20060065517 - Target and method of diffusion bonding target to backing plate Sputter target assemblies (10) and methods of making the sputter target assemblies in which the HIP processes conventionally used are minimized, or eliminated, while producing higher yields of sputter target assemblies in less time. In one instance the sputter target assemblies include a single, or multiple, layered interlayer (14, 16) ... 03/23/06 - 20060060465 - Apparatus for forming nanoholes and method for forming nanoholes A vacuum chamber 1 has a plasma generating space 11 in its interior. A magnetic field generating means 4 applies a fluctuating magnetic field to the plasma generating space 11 to cause plasma there to fluctuate. A substrate 6 is placed in the plasma generating space 11 so that when ... 03/16/06 - 20060054496 - Biased pulse dc reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films ... 03/16/06 - 20060054495 - Substrate processing system In a substrate processing system for the treatment of substrates in vacuum two linear assemblies of process modules are stacked one above the other and connected by at least one lift module allowing for the transport from the first set to the second set. Along the traveling path through the ... 03/16/06 - 20060054494 - Physical vapor deposition apparatus for depositing thin multilayer films and methods of depositing such films A compact and economical physical vapor deposition (PVD) module for depositing thin film multi-layers with extreme control of thickness, uniformity and surface smoothness. The module includes multiple deposition sources positioned in a conical cluster with confocal arrangement about a single common deposition zone that is defined by a deposition aperture ... 03/16/06 - 20060054493 - Method for the production of a substrate and unit for the same In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9) with a given movement. ... 03/09/06 - 20060049034 - Laser ablation apparatus and method of preparing nanoparticles using the same A laser ablation apparatus and a method of preparing nanoparticles using the same are provided. The laser ablation apparatus may include: a reaction chamber having a discharge space therein; a susceptor on which a target is mounted, disposed inside the reaction chamber; a laser generator causing a plasma discharge by ... 03/02/06 - 20060042928 - Method for coating piston rings for internal combustion engines The invention relates to a method for coating piston rings (10) for internal combustion engines, wherein at least the bearing surface of the piston ring is provided with an anti-abrasion and anti-corrosion coating (12) by means of a PVD or electroplating process. According to said method, the anti-abrasion and anti-corrosion ... 02/16/06 - 20060032738 - Power delivery control and balancing between multiple loads A plasma process machine includes at least two electrodes disposed in a processing chamber and in contact with targets, an alternating current source connected to supply power to the electrodes, and a power delivery controller adapted to control power delivered by the alternating current source to the electrodes. The power ... 02/16/06 - 20060032737 - Magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate The invention relates to a magnetron sputtering device particularly comprising at least one vacuum chamber and being intended for the coating of multicomponent films on a substrate by means of magnetron co-sputtering; said device is provided with a cylindrical cathode (1, 1′) mounted rotatably around the axial longitudinal shaft and ... 02/02/06 - 20060021869 - System for and method of ensuring accurate shadow mask-to-substrate registration in a deposition process A deposition system uses the same low coefficient of thermal expansion (CTE) material, for example, a CTE of below 10 ppm/° C. in the temperature range of 0-200° C., for forming both a shadow mask and a substrate upon which depositions occur in order to overcome the heating effects of ... 01/19/06 - 20060011470 - Sputtering magnetron control devices Embodiments relate to manipulating and controlling the magnetic field profile of a magnetron within a sputtering system dynamically (i.e., in real time), to most effectively utilize the target material as required by any stage of its erosion and to sputter deposit films with a desired profile or characteristics. In particular, ... 01/19/06 - 20060011469 - Coating system for coating a mold A coating system for coating a core insert includes a vacuum chamber (19) for providing a coating space, a pump system (10) for evacuating the vacuum chamber (19), a DC power supplier (18), a DC magnetron (14), and a gas-in system (16) for providing the vacuum chamber (19) a sputtering ... 01/19/06 - 20060011468 - Method and system for coating internal surfaces of prefabricated process piping in the field The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum source is connected at ... 01/12/06 - 20060006058 - Staggered target tiles A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against ... 01/05/06 - 20060000705 - Cylindrical target with oscillating magnet for magnetron sputtering In some embodiments, the invention includes a cylindrical cathode target assembly for use in sputtering target material onto a substrate that comprises a generally cylindrical target, means for rotating the target about its axis during a sputtering operation, an elongated magnet carried within the target for generation of a plasma-containing ... 12/29/05 - 20050284746 - Systems and methods for a target and backing plate assembly A target (1) and backing plate (10) assembly and method of making the same. The target (1) and backing plate (10) assembly provides a mechanical interlock between the target (1) and backing plate (10) in addition to diffusion bonding between dissimilar materials comprising the target (1) and backing plate (10). ... 12/22/05 - 20050279624 - Highly ionized pvd with moving magnetic field envelope for uniform coverage of feature structure and wafer This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step ... 12/08/05 - 20050269200 - Film deposition Films are deposited on a substrate using a plasma chamber having a target disposed about an axis and a magnetron rotatable about the axis at an adjustable offset from the axis to vary the pattern of ions impinging on the target. In the deposition of the films, a first film ... 12/01/05 - 20050263389 - Variable quadruple electromagnet array in plasma processing A quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor, preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a ... 11/24/05 - 20050258027 - Back-biased face target sputtering based programmable logic device Systems and methods are disclosed for forming memory arrays on a substrate in an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region ... 11/17/05 - 20050252763 - High deposition rate sputtering Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply ... 11/10/05 - 20050247554 - Pulsed magnetron for sputter deposition A magnetron sputter reactor for sputtering deposition materials such as nickel and cobalt, for example, and its method of use, in which self-ionized plasma (SIP) sputtering is promoted. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during ... 09/29/05 - 20050211548 - Selectable dual position magnetron A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one ... 09/29/05 - 20050211547 - Reactive sputter deposition plasma reactor and process using plural ion shower grids A reactive sputter deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid ... 09/29/05 - 20050211546 - Reactive sputter deposition plasma process using an ion shower grid A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane ... 09/22/05 - 20050205412 - Sputtering device for manufacturing thin films A sputtering station for depositing a thin film on a substrate includes a cathode comprising two targets placed opposite each other defining a plasma region, permanent magnets or coils to generate a magnetic field, yokes to direct the magnetic field and two independent power supplies connected to each target to ... 09/22/05 - 20050205411 - [physical vapor deposition process and apparatus therefor] A physical vapor deposition apparatus is provided. The physical vapor deposition apparatus comprises: a reaction chamber; and an electromagnet magnetron device disposed above and outside said reaction chamber, wherein when performing a physical vapor deposition process, the magnetic poles of said electromagnet magnetron device are reversed in-situ to reduce the ... 09/15/05 - 20050199485 - Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. ... 08/25/05 - 20050183945 - Back-biased face target sputtering based memory Systems and methods are disclosed for forming memory arrays on a substrate in an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region ... 08/25/05 - 20050183944 - Reducing stress in coatings produced by physical vapour deposition Coatings are deposited using arc-based deposition methods using a large negative bias on the substrate, of −1,500 V or more negative, which is varied during deposition, resulting in reduced stress in the coating. ... 08/25/05 - 20050183943 - Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coating chamber along a coating line by a single person ... 08/18/05 - 20050178654 - High deposition rate sputtering Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply ... 08/18/05 - 20050178653 - Method for elimination of sputtering into the backing plate of a target/backing plate assembly A method for preventing sputtering into the backing plate of a sputter target assembly using a novel backing plate having an annular groove disposed on an area of an intended erosion groove of the sputter target and having a tubular channel connecting the groove to the atmosphere. A sputter target/backing ... 08/11/05 - 20050173238 - Automatically adjusting serial connections of thick and thin layers and method for the production thereof The invention relates to a method for the production of automatically adjusting serial connections of thick and/or thin layers. Said method comprises the following steps: applying electrically conductive strip conductors (20) to a substrate (10); applying a first main layer (30) at an angle α to the substrate surface; applying ... 08/04/05 - 20050167263 - High-power pulsed magnetically enhanced plasma processing Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate ... 08/04/05 - 20050167262 - Passive bipolar arc control system and method A method and system for controlling arcs in a DC sputtering system with a passive circuit is presented. The arc control system includes a sputtering chamber that houses an anode and a sputtering target formed from a target material and serving as a cathode. A DC power supply provides a ... 07/14/05 - 20050150758 - Processes and device for the deposition of films on substrates It is in the object of the present invention to improve current deposition processes and devices for the fabrication of multilayer systems to better control the energy contribution at different stages of the deposition. This is achieved by depositing films by sputtering in a scheme providing for thermalized particles. One ... 07/07/05 - 20050145478 - Two dimensional magnetron scanning for flat panel sputtering A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions ... 07/07/05 - 20050145477 - Device for targeted application of deposition material to a substrate The invention relates to a device for the targeted application of deposition material to a substrate, especially for focusing the sputter flow in a PVD-system. The invention is characterised in that the deposition material is directed through a filter structure (90) having several channel-shaped individual structures (60) onto said substrate ... 06/23/05 - 20050133361 - Compensation of spacing between magnetron and sputter target A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the ... 06/16/05 - 20050126904 - Apparatus and process for physical vapor deposition An apparatus for physical vapor deposition (PVD) is described. The apparatus includes a chamber, a target back plate, a wafer base, a target and a mobile magnetron device. The target back plate is located over a top surface of the chamber, and the wafer base is located over a bottom ... 06/16/05 - 20050126903 - Method for formation of titanium nitride films A procedure for the synthesis of titanium nitride (TiN) thin films on metal substrate by vapor deposition using a magnetized sheet plasma source is disclosed. TiN films on metal substrate exhibiting the stoichiometric TiN and Ti2N were synthesized in a mixed N2/Ar plasma with initial gas filing ratio of preferably ... 06/09/05 - 20050121310 - Method and substrate to control flow of underfill A selective sputtering method and resulting substrate are provided. This may involve obtaining a substrate and identifying a die placement area and a keep out area of the substrate. A protective area may be formed over the substrate between the die placement area and the keep out area. This may ... 06/02/05 - 20050115824 - Method of fault detection for material process system A method for material processing utilizing a material processing system to perform a process. The method performs a process (510), measures a scan of data (520), and transforms the data scan (530) into a signature (540) including at least one spatial component. The scan of data (530) can include a ... 06/02/05 - 20050115823 - Apparatus A vacuum sputtering apparatus capable of depositing a plurality of thin film layers on a substrate, the apparatus comprising: a vacuum chamber (1) having gas inlet means and gas evacuation means; a substrate support table (2) arranged to be rotatable about at least one axis perpendicular to the plane of ... ### FreshPatents.com Support |