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Chemistry: Electrical And Wave Energy > Non-distilling Bottoms Treatment > Coating, Forming Or Etching By Sputtering > Ion Beam Sputter Deposition

Ion Beam Sputter Deposition

Ion Beam Sputter Deposition patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

10/23/14 - 20140311892 - Reactive sputtering process
Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material...

08/21/14 - 20140231242 - Tool and process for treating an object by plasma generators
An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling...

06/26/14 - 20140174909 - Generating a highly ionized plasma in a plasma chamber
A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy...

04/24/14 - 20140110244 - Supersonic beam apparatus and cluster ion beam forming method
Provided is a supersonic beam apparatus including a nozzle for injecting a gas at a supersonic velocity into a vacuum; a skimmer arranged at a downstream of the nozzle; and an ionization part for ionizing a particle in a supersonic beam formed by the skimmer from the gas injected from...

04/03/14 - 20140090973 - Device and method for ion beam sputtering
The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which include a plurality of targets of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less...

03/27/14 - 20140083840 - Film deposition apparatus and film deposition method
A film deposition apparatus includes: a chamber including a chamber wall that is formed with a window; a target holder disposed in the chamber for supporting a target; a radio frequency power device; a pole plate unit disposed in the chamber and including a first pole plate that is electrically...

03/06/14 - 20140061028 - Hydrophilic coatings, methods for depositing hydrophilic coatings and improved deposition technology for thin films
The invention provides certain embodiments that involve sputtering techniques for applying a mixed oxide film comprising silica and titania. In these embodiments, the techniques involve sputtering at least two targets in a common chamber (e.g., in a shared gaseous atmosphere). A first of these targets includes silicon, while a second...

02/13/14 - 20140042014 - Method for using sputtering target and method for forming oxide film
In a method for using a sputtering target, by making an ion collide with the sputtering target, a sputtered particle whose size is greater than or equal to 1/3000 and less than or equal to 1/20, preferably greater than or equal to 1/1000 and less than or equal to 1/30...

01/16/14 - 20140014497 - Film deposition assisted by angular selective etch on a surface
An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be...

01/16/14 - 20140014498 - Method for manufacturing metal foil provided with electrical resistance layer
The present invention provides a method for producing a metal foil with an electric resistance layer which can stably obtain electric characteristics of a resistive element, suppress peeling between the metal foil and the electric resistance layer disposed on the metal foil, and realize a high sheet resistance value and...

08/15/13 - 20130206583 - Method and apparatus for surface processing of a substrate using an energetic particle beam
Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to...

06/20/13 - 20130153408 - Method for producing cubic zirconia layers
In order to produce zirconia-based layers on a deposition substrate, wherein reactive spark deposition using pulsed spark current and/or the application of a magnetic field that is perpendicular to the spark target are employed, a mixed target comprising elemental zircon and at least one stabilizer is used, or a zirconium...

03/21/13 - 20130068611 - Localized, in-vacuum modification of small structures
A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to...

01/17/13 - 20130015055 - Dual plasma source systems and methods for reactive plasma deposition
A plasma processing system for providing a uniform erosion of a surface of a target is provided. The system includes a dual plasma source arrangement, wherein each plasma source of the dual plasma source arrangement having a source housing for generating plasma therein. The system further includes a set of...

01/10/13 - 20130008776 - Method of forming carbon film, and method of manufacturing magnetic recording medium
There is provided a method of forming a carbon film which enables formation of a dense carbon film exhibiting high wettability with respect to a lubricant and also having high hardness, the method of forming a carbon film including: introducing a raw material gas (G) containing carbon and hydrogen into...

12/06/12 - 20120305385 - Plasma sputtering process for producing particles
A high production rate plasma sputtering process for producing particles having a size of 10 μm or less is disclosed. The process causes ionization of at least a part of the sputtered target atoms and is performed at such parameters that the pick-up probability of ionized sputtered target atoms on...

10/25/12 - 20120267238 - Process for deposition of amorphous carbon
A method for increasing oil-out survivability in a mechanical system having a plurality of components each having a least one surface, includes placing at least one of the plurality of components into a vacuum chamber having at least one broad-beam ion gun; supplying an inert gas to the broad-beam ion...

09/27/12 - 20120241310 - Device and method for coating a substrate
An apparatus for coating a substrate has a vacuum chamber designed to receive the substrate and at least one sputtering target to be ablated during operation of the apparatus by particle bombardment. At least one window is arranged in the wall of the vacuum chamber. A device for determining the...

09/20/12 - 20120234671 - Method and device for producing three-dimensional objects
The invention concerns a method for producing three-dimensional objects (3) layer by layer using a powdery material (5) which can be solidified by irradiating it with a high-energy beam....

06/14/12 - 20120145534 - Process for producing reflective mask blank for euv lithography and process for producing substrate with functional film for the mask blank
A process for producing a reflective mask blank for EUVL, which comprises at least a step of forming a Mo/Si multilayer reflective film, a step of forming a ruthenium (Ru) film or Ru compound film as a protective layer on the multilayer reflective film, and a step of forming an...

05/24/12 - 20120125764 - Method for producing oxide thin film
A method for producing an oxide thin film, including depositing sputtered particles from a metallic deposition source on a deposition area under the condition of a sputtering energy density of 9.5 W/cm2 to 20 W/cm2 according to a magnetron sputtering method to form the oxide thin film, while irradiating an...

04/05/12 - 20120080306 - Photovoltaic device and method for making
One aspect of the present invention provides a method to make a film. The method includes providing a target comprising a semiconductor material within an environment comprising oxygen; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the target with the...

04/05/12 - 20120080307 - Ion beam distribution
An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile...

04/05/12 - 20120080308 - Plume steering
Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example...

03/01/12 - 20120048723 - Sputter target feed system
An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target....

11/17/11 - 20110278156 - Multiple anode ion source
An ion source is provided. The ion source comprises a first cylindrical anode and a second cylindrical anode. The first cylindrical anode is concentric with the second cylindrical anode. The ion source further comprises an electron source positioned within the first cylindrical anode or the second cylindrical anode....

09/22/11 - 20110226611 - Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith
A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically...

09/15/11 - 20110220487 - Protective enclosure for an ion gun, device for depositing materials through vacuum evaporation comprising such a protective enclosure and method for depositing materials
The present invention relates to a protective enclosure for an ion gun and to a device for depositing materials through vacuum evaporation comprising such an enclosure and methods of using each. According to the invention, the protective enclosure comprises a side wall intended to surround said ion gun, and an...

09/01/11 - 20110209983 - Use of high energy heavy ion beam for direct sputtering
High energy heavy ions are used to produce free space regions by sputtering the high energy beam through a mask onto a substrate. The invention also includes a method of focusing the high energy beam with a beam focusing system. The invention is in part based on an experiment in...

06/16/11 - 20110139605 - Ion beam source
This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions....

05/05/11 - 20110100798 - Charged particle extraction device and method of design there for
The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the...

04/21/11 - 20110089022 - Method and apparatus for surface processing of a substrate
Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel...

03/10/11 - 20110056825 - Dielectric-layer-coated substrate and installation for production thereof
The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion...

01/20/11 - 20110011734 - Plasma gun and plasma gun deposition system including the same
A plasma gun of the present invention includes: a container having a plasma outflow opening; a cathode (18) which is disposed inside the container to generate plasma by discharge; an auxiliary anode which is disposed to be able to be located between the plasma outflow opening and the cathode and...

12/23/10 - 20100320075 - High-temperature ionic state compound crystallization technology
The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum...

12/16/10 - 20100314244 - Ionized physical vapor deposition for microstructure controlled thin film deposition
Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency...

11/25/10 - 20100294648 - Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source....

11/04/10 - 20100276272 - Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor
A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer...

11/04/10 - 20100276273 - Method and apparatus for controlling ion energy distribution
Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary system includes an ion-energy control portion, and the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy setting that is indicative of a desired distribution of energies...

07/29/10 - 20100187095 - Manufacturing method of a boride film, and manufacturing method of an electron-emitting device
A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of...

06/24/10 - 20100155224 - Multi-component deposition
Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition....

05/06/10 - 20100108494 - Microporous article having metallic nanoparticle coating
A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described....

04/01/10 - 20100078311 - Aluminum floride thin film deposition method
An aluminum fluoride thin film deposition method includes the steps of (a) putting a substrate and a pure aluminum target in a plasma sputtering system, (b) applying argon plasma to the plasma sputtering system to remove impurities from the aluminum target, (c) applying CF4 gas, which is stable at room...

03/11/10 - 20100059362 - Techniques for manufacturing solar cells
Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may be comprise disposing the solar cell downstream of an ion source; disposing a mask between the ion source and the solar cell, the mask including a front surface, a back surface, and at least one...

02/11/10 - 20100032288 - Coating and ion beam mixing apparatus and method to enhance the corrosion resistance of the materials at the elevated temperature using the same
The present invention relates, in general, to shoes for measuring the quantity of motion and a method of measuring the quantity of motion using the shoes and, more particularly, to artificial intelligence shoes, in which various numerical values (calorie consumption, body fat, and a pulse), measured by a walking sensor...

02/04/10 - 20100025228 - Method for preparing thin gan layers by implantation and recycling of a starting substrate
A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium...

01/21/10 - 20100012480 - Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency rf impedance tuning
The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency...

12/31/09 - 20090321247 - Ionized physical vapor deposition (ipvd) process
A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross...

11/26/09 - 20090288942 - Particulate capture in a plasma tool
A method and apparatus for increasing adhesion of particles ejected from a substrate being sputtered to interior surfaces of a vacuum chamber containing the substrate. The method includes: forming a viscous coating on a at least some regions of interior surfaces of the vacuum chamber, the viscous coating having a...

10/01/09 - 20090242385 - Method of depositing metal-containing films by inductively coupled physical vapor deposition
A method for depositing a metal-containing film on a substrate using an inductively coupled (ICP) physical vapor deposition (PVD) system. The ICP PVD deposition is performed under process conditions that thermalize neutral sputtered metal atoms by collisions with a process gas and minimize or eliminate exposure of ions to the...

10/01/09 - 20090242386 - System and method of fabricating pores in polymer membranes
A system of the present disclosure has a particle source that generates an ion beam and a vacuum chamber that houses a polymer film. The particle source bombards the polymer film with the ion beam. The system further has a controller that controls the particle source based upon an amount...

10/01/09 - 20090242387 - Process for producing silica glass containing tio2, and optical material for euv lithography employing silica glass containing tio2
The claimed invention relates to a process for producing an optical material for EUV lithography, wherein the optical material contains a silica glass having a TiO2 concentration of from 3 to 12 mass % and a hydrogen molecule content of less than 5×1017 molecules/cm3 in the glass. The process including...