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Ion Beam Sputter Deposition

Ion Beam Sputter Deposition patent applications listed include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.

Related Categories:

Chemistry: Electrical And Wave Energy


Non-distilling Bottoms Treatment > Coating, Forming Or Etching By Sputtering > Ion Beam Sputter Deposition



Reactive sputtering process
10/23/14 - 20140311892 - Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material...

Tool and process for treating an object by plasma generators
08/21/14 - 20140231242 - An apparatus for treating a surface of an object comprises a vacuum chamber in which the object is intended to be placed, and means, in communication with the vacuum chamber, for treating the surface of the object, comprising at least two plasma generator. The apparatus also comprises means for controlling...

Generating a highly ionized plasma in a plasma chamber
06/26/14 - 20140174909 - A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy...

Supersonic beam apparatus and cluster ion beam forming method
04/24/14 - 20140110244 - Provided is a supersonic beam apparatus including a nozzle for injecting a gas at a supersonic velocity into a vacuum; a skimmer arranged at a downstream of the nozzle; and an ionization part for ionizing a particle in a supersonic beam formed by the skimmer from the gas injected from...

Device and method for ion beam sputtering
04/03/14 - 20140090973 - The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which include a plurality of targets of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less...

Film deposition apparatus and film deposition method
03/27/14 - 20140083840 - A film deposition apparatus includes: a chamber including a chamber wall that is formed with a window; a target holder disposed in the chamber for supporting a target; a radio frequency power device; a pole plate unit disposed in the chamber and including a first pole plate that is electrically...

Hydrophilic coatings, methods for depositing hydrophilic coatings and improved deposition technology for thin films
03/06/14 - 20140061028 - The invention provides certain embodiments that involve sputtering techniques for applying a mixed oxide film comprising silica and titania. In these embodiments, the techniques involve sputtering at least two targets in a common chamber (e.g., in a shared gaseous atmosphere). A first of these targets includes silicon, while a second...

Method for using sputtering target and method for forming oxide film
02/13/14 - 20140042014 - In a method for using a sputtering target, by making an ion collide with the sputtering target, a sputtered particle whose size is greater than or equal to 1/3000 and less than or equal to 1/20, preferably greater than or equal to 1/1000 and less than or equal to 1/30...

Film deposition assisted by angular selective etch on a surface
01/16/14 - 20140014497 - An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be...

Method for manufacturing metal foil provided with electrical resistance layer
01/16/14 - 20140014498 - The present invention provides a method for producing a metal foil with an electric resistance layer which can stably obtain electric characteristics of a resistive element, suppress peeling between the metal foil and the electric resistance layer disposed on the metal foil, and realize a high sheet resistance value and...

Method and apparatus for surface processing of a substrate using an energetic particle beam
08/15/13 - 20130206583 - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to...

Method for producing cubic zirconia layers
06/20/13 - 20130153408 - In order to produce zirconia-based layers on a deposition substrate, wherein reactive spark deposition using pulsed spark current and/or the application of a magnetic field that is perpendicular to the spark target are employed, a mixed target comprising elemental zircon and at least one stabilizer is used, or a zirconium...

Localized, in-vacuum modification of small structures
03/21/13 - 20130068611 - A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to...

Dual plasma source systems and methods for reactive plasma deposition
01/17/13 - 20130015055 - A plasma processing system for providing a uniform erosion of a surface of a target is provided. The system includes a dual plasma source arrangement, wherein each plasma source of the dual plasma source arrangement having a source housing for generating plasma therein. The system further includes a set of...

Method of forming carbon film, and method of manufacturing magnetic recording medium
01/10/13 - 20130008776 - There is provided a method of forming a carbon film which enables formation of a dense carbon film exhibiting high wettability with respect to a lubricant and also having high hardness, the method of forming a carbon film including: introducing a raw material gas (G) containing carbon and hydrogen into...

Plasma sputtering process for producing particles
12/06/12 - 20120305385 - A high production rate plasma sputtering process for producing particles having a size of 10 μm or less is disclosed. The process causes ionization of at least a part of the sputtered target atoms and is performed at such parameters that the pick-up probability of ionized sputtered target atoms on...

Process for deposition of amorphous carbon
10/25/12 - 20120267238 - A method for increasing oil-out survivability in a mechanical system having a plurality of components each having a least one surface, includes placing at least one of the plurality of components into a vacuum chamber having at least one broad-beam ion gun; supplying an inert gas to the broad-beam ion...

Device and method for coating a substrate
09/27/12 - 20120241310 - An apparatus for coating a substrate has a vacuum chamber designed to receive the substrate and at least one sputtering target to be ablated during operation of the apparatus by particle bombardment. At least one window is arranged in the wall of the vacuum chamber. A device for determining the...

Method and device for producing three-dimensional objects
09/20/12 - 20120234671 - The invention concerns a method for producing three-dimensional objects (3) layer by layer using a powdery material (5) which can be solidified by irradiating it with a high-energy beam....

Process for producing reflective mask blank for euv lithography and process for producing substrate with functional film for the mask blank
06/14/12 - 20120145534 - A process for producing a reflective mask blank for EUVL, which comprises at least a step of forming a Mo/Si multilayer reflective film, a step of forming a ruthenium (Ru) film or Ru compound film as a protective layer on the multilayer reflective film, and a step of forming an...

Method for producing oxide thin film
05/24/12 - 20120125764 - A method for producing an oxide thin film, including depositing sputtered particles from a metallic deposition source on a deposition area under the condition of a sputtering energy density of 9.5 W/cm2 to 20 W/cm2 according to a magnetron sputtering method to form the oxide thin film, while irradiating an...

Photovoltaic device and method for making
04/05/12 - 20120080306 - One aspect of the present invention provides a method to make a film. The method includes providing a target comprising a semiconductor material within an environment comprising oxygen; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the target with the...

Ion beam distribution
04/05/12 - 20120080307 - An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile...

Plume steering
04/05/12 - 20120080308 - Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example...

Sputter target feed system
03/01/12 - 20120048723 - An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target....

Multiple anode ion source
11/17/11 - 20110278156 - An ion source is provided. The ion source comprises a first cylindrical anode and a second cylindrical anode. The first cylindrical anode is concentric with the second cylindrical anode. The ion source further comprises an electron source positioned within the first cylindrical anode or the second cylindrical anode....

Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith
09/22/11 - 20110226611 - A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically...

Protective enclosure for an ion gun, device for depositing materials through vacuum evaporation comprising such a protective enclosure and method for depositing materials
09/15/11 - 20110220487 - The present invention relates to a protective enclosure for an ion gun and to a device for depositing materials through vacuum evaporation comprising such an enclosure and methods of using each. According to the invention, the protective enclosure comprises a side wall intended to surround said ion gun, and an...

Use of high energy heavy ion beam for direct sputtering
09/01/11 - 20110209983 - High energy heavy ions are used to produce free space regions by sputtering the high energy beam through a mask onto a substrate. The invention also includes a method of focusing the high energy beam with a beam focusing system. The invention is in part based on an experiment in...

Ion beam source
06/16/11 - 20110139605 - This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions....

Charged particle extraction device and method of design there for
05/05/11 - 20110100798 - The present invention provides a method for extracting a charged particle beam from a charged particle source. A set of electrodes is provided at the output of the source. The potentials applied to the electrodes produce a low-emittance growth beam with substantially zero electric field at the output of the...

Method and apparatus for surface processing of a substrate
04/21/11 - 20110089022 - Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel...

Dielectric-layer-coated substrate and installation for production thereof
03/10/11 - 20110056825 - The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion...

Plasma gun and plasma gun deposition system including the same
01/20/11 - 20110011734 - A plasma gun of the present invention includes: a container having a plasma outflow opening; a cathode (18) which is disposed inside the container to generate plasma by discharge; an auxiliary anode which is disposed to be able to be located between the plasma outflow opening and the cathode and...

High-temperature ionic state compound crystallization technology
12/23/10 - 20100320075 - The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum...

Ionized physical vapor deposition for microstructure controlled thin film deposition
12/16/10 - 20100314244 - Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency...

Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
11/25/10 - 20100294648 - The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source....

Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor
11/04/10 - 20100276272 - A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer...

Method and apparatus for controlling ion energy distribution
11/04/10 - 20100276273 - Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary system includes an ion-energy control portion, and the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy setting that is indicative of a desired distribution of energies...

Manufacturing method of a boride film, and manufacturing method of an electron-emitting device
07/29/10 - 20100187095 - A boride film is deposited on a substrate through an opening portion a shield member located between the substrate and a target by means of a sputtering method. The shield member is arranged so as to shield between an erosion region of the target and the substrate. A distribution of...

Multi-component deposition
06/24/10 - 20100155224 - Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition....

Microporous article having metallic nanoparticle coating
05/06/10 - 20100108494 - A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described....

Aluminum floride thin film deposition method
04/01/10 - 20100078311 - An aluminum fluoride thin film deposition method includes the steps of (a) putting a substrate and a pure aluminum target in a plasma sputtering system, (b) applying argon plasma to the plasma sputtering system to remove impurities from the aluminum target, (c) applying CF4 gas, which is stable at room...

Techniques for manufacturing solar cells
03/11/10 - 20100059362 - Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may be comprise disposing the solar cell downstream of an ion source; disposing a mask between the ion source and the solar cell, the mask including a front surface, a back surface, and at least one...

Coating and ion beam mixing apparatus and method to enhance the corrosion resistance of the materials at the elevated temperature using the same
02/11/10 - 20100032288 - The present invention relates, in general, to shoes for measuring the quantity of motion and a method of measuring the quantity of motion using the shoes and, more particularly, to artificial intelligence shoes, in which various numerical values (calorie consumption, body fat, and a pulse), measured by a walking sensor...

Method for preparing thin gan layers by implantation and recycling of a starting substrate
02/04/10 - 20100025228 - A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium...

Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency rf impedance tuning
01/21/10 - 20100012480 - The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency...

Ionized physical vapor deposition (ipvd) process
12/31/09 - 20090321247 - A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross...

Particulate capture in a plasma tool
11/26/09 - 20090288942 - A method and apparatus for increasing adhesion of particles ejected from a substrate being sputtered to interior surfaces of a vacuum chamber containing the substrate. The method includes: forming a viscous coating on a at least some regions of interior surfaces of the vacuum chamber, the viscous coating having a...

Method of depositing metal-containing films by inductively coupled physical vapor deposition
10/01/09 - 20090242385 - A method for depositing a metal-containing film on a substrate using an inductively coupled (ICP) physical vapor deposition (PVD) system. The ICP PVD deposition is performed under process conditions that thermalize neutral sputtered metal atoms by collisions with a process gas and minimize or eliminate exposure of ions to the...

System and method of fabricating pores in polymer membranes
10/01/09 - 20090242386 - A system of the present disclosure has a particle source that generates an ion beam and a vacuum chamber that houses a polymer film. The particle source bombards the polymer film with the ion beam. The system further has a controller that controls the particle source based upon an amount...

Process for producing silica glass containing tio2, and optical material for euv lithography employing silica glass containing tio2
10/01/09 - 20090242387 - The claimed invention relates to a process for producing an optical material for EUV lithography, wherein the optical material contains a silica glass having a TiO2 concentration of from 3 to 12 mass % and a hydrogen molecule content of less than 5×1017 molecules/cm3 in the glass. The process including...

Capillaritron ion beam sputtering system and thin film production method
09/24/09 - 20090236217 - A capillaritron ion beam sputtering system and a thin film production method are disclosed. By utilizing reactive capillaritron ion beam sputtering deposition, argon and oxygen are passed through a capillaritron ion source simultaneously. Argon is being ionized and accelerated by a voltage to bombard a zinc target and create zinc...

Cathode and counter-cathode arrangement in an ion source
08/27/09 - 20090211896 - The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc...

Method of manufacturing a perpendicular magnetic write head with stepped trailing magnetic shield using collimated sputter deposition
07/02/09 - 20090166183 - A method for manufacturing a magnetic write head having a stepped trailing shield. The stepped trailing shield is formed by forming a non-magnetic bump over a write pole prior to electroplating a wrap-around magnetic shield. This bump is formed by constructing a mask having an opening configured to define the...

Perpendicular magnetic medium with shields between tracks
07/02/09 - 20090166184 - A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium....

Ion assisted deposition method for forming multilayer film
07/02/09 - 20090166185 - An ion assisted deposition (IAD) method for forming a film on a substrate is disclosed. The film includes a number of layers. The substrate is bombarded by an ion source with a low ion energy at a initial period of forming each of the layers and a high ion energy...

Sputtering devices and methods
06/11/09 - 20090145743 - The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field...

Method for forming a corrugation multilayer
05/21/09 - 20090127096 - A method for forming a corrugation multilayer is provided. A periodic substrate is obtained, and then a corrugated reshaping layer is formed on the periodic substrate. The corrugated reshaping layer may be formed by an ion beam sputtering system and a bias etching system. Afterward, the following steps a and...

Oxide sintered body, target, transparent conductive film obtained by using the same, and transparent conductive substrate
04/23/09 - 20090101493 - Provided are an oxide sintered body having zinc oxide as a main component and still more containing magnesium, a target obtained by processing the same, a transparent conductive film having excellent chemical resistance and low resistance, obtained by a direct-current sputtering method or an ion plating method by using the...

Film deposition apparatus and method of film deposition
03/19/09 - 20090071818 - An ion beam sputtering film deposition apparatus is provided which can form a high-quality thin film that is dense, smooth and faultless. The film deposition apparatus has ion beam irradiating unit, a target 105 containing a film forming substance to be sputtered, and holding unit 112 to hold a substrate...

Method of arc ion plating and target for use therein
03/12/09 - 20090065348 - It is an object of the present invention to provide an arc ion plating method and a target used therein, capable of obtaining a uniform film thickness distribution substantially throughout the overall length of a work and also capable of improving the yield of the target material and reducing the...

Alignment film forming apparatus and methos
02/26/09 - 20090050469 - An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film...

Method and device for enhancing solderability
02/26/09 - 20090050470 - A method and a device for enhancing the solderability of a lead-free component are provided. The provided method is compatible with the conventional soldering process and is capable of improving the wetting ability of the solder so as to enhance the solderability and the ability of anti-oxidation thereof. Besides, it...