REGISTER now for FREE 
|
FREE patent keyword monitoring and additional FREE benefits. REGISTER now for FREE
|
|
|
Coating Apparatus > Gas Or Vapor Deposition Gas Or Vapor DepositionGas Or Vapor Deposition patent applications listed are from June 2005 to current and include Date, Patent Application Number, Patent Title, Patent Abstract summary and are linked to the corresponding patent application page.01/24/08 - 20080017108 - Gas combustion apparatus A method of combusting a gas comprises the steps of conveying the gas to a combustion nozzle connected to a combustion chamber, and supplying to the chamber gas for forming a pilot flame around the combustion nozzle. To form the pilot flame, hydrogen is supplied to the chamber through a ... 01/17/08 - 20080011230 - Chemical vapor deposition equipment Chemical vapor deposition equipment includes a reactor, an adjustable pipe, and an exhausted pipe. The adjustable pipe includes a compressible body, a bushing, and a ring positioned at an end of the body for connecting with the exhausted pipe. The bushing is positioned inside the body, and an end of ... 12/27/07 - 20070295273 - Systems and methods for forming metal oxides using metal diketonates and/or ketoimines A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands. ... 12/06/07 - 20070277734 - Process chamber for dielectric gapfill A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma ... 11/08/07 - 20070256637 - Methods and apparatus for using a reinforced diffuser in substrate processing The invention provides methods and apparatus for using a reinforced gas diffuser in substrate processing. A gas diffuser for use in a PECVD processes includes an aluminum plate with reinforcement material embedded within the aluminum plate. The reinforcement material is adapted to support the aluminum plate and maintain a flatness ... 11/08/07 - 20070256636 - Gas preheater for chemical vapor processing furnace A gas preheater (10) that includes an exit plate (20) having first and second sides (22, 24) and a plurality of through holes (26) and at least one body (34) mounted adjacent the first side (22), the at least one body (34) having a first end (36) and a second ... 11/08/07 - 20070256635 - Uv activation of nh3 for iii-n deposition Systems are disclosed for fabricating compound nitride semiconductor structures. The systems include a housing defining a processing chamber, a substrate holder disposed within the processing chamber, an NH3 source, a group-III precursor source, an ultraviolet source, and a CVD showerhead disposed over the substrate holder. The showerhead has a first ... 11/01/07 - 20070251451 - Nanolayer thick film processing system A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; ... 10/11/07 - 20070234956 - Method and apparatus for providing uniform gas delivery to a reactor A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas ... 10/11/07 - 20070234955 - Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system A method and apparatus is described for reducing CO poisoning of a thin metal film formed on a substrate using a metal carbonyl precursor. The thin metal film is formed on the substrate resting on a substrate holder in a thin film deposition system. The substrate holder comprises a shield ... 09/20/07 - 20070215047 - Vacuum device where power supply mechanism is mounted and power supply method An improvement has been made in contact states between a rotating electrode arranged inside a vacuum chamber and a power supply mechanism which touches the rotating electrode to supply electric power thereto. A vacuum device is provided with a vacuum chamber, a rotating electrode arranged inside and electrically insulated from ... 09/13/07 - 20070209589 - Slab cross flow cvd reactor A method and system for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a generally rectangular chamber that is configured for cross flow and/or zone flow control of reactant gases therethrough. One reactant gas can be injected into the chamber from one end thereof to ... 09/13/07 - 20070209588 - Exhaust system for a vacuum processing system A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to ... 08/30/07 - 20070199509 - Apparatus for the efficient coating of substrates A process for the coating of substrates comprising insertion of a substrate into a process oven, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the ... 08/02/07 - 20070175392 - Multiple precursor dispensing apparatus An apparatus for dispensing multiple precursors to a manufacturing tool includes a fluidic manifold having a plurality of interconnected sub-manifolds, a plurality of tanks, each tank containing a different precursor, and wherein each of the sub-manifolds is connected to one of the tanks. A system for dispensing multiple precursors to ... 07/19/07 - 20070163498 - Gas dispersion shield and method A gas dispersion shield and method for protecting the bottom surface of a gas deposition chamber, while injecting gas from a gas insertion channel into the chamber at a non-vertical angle. The gas dispersion shield includes a cylindrically shaped vertical sidewall, an annular flange extending horizontally and outwardly from the ... 07/19/07 - 20070163497 - Two-dimensional aperture array for vapor deposition A method for forming a layer on a surface in making a device, including providing a distribution member for receiving vaporized material, the distribution member having one or more walls defining a polygonal two-dimensional pattern of apertures is formed in a wall, which deliver vaporized material in a molecular flow ... 07/12/07 - 20070157884 - Organosiloxane copolymer film, production method and deposition apparatus for said copolymer film, and semiconductor device using said copolymer film An insulated organic copolymer is provided, having the excellent mechanical strength and deposition property at an interface contacting the lower base or the upper layer of the inorganic insulation film, and the effective dielectric constant is low as the whole film, which is suitable as the interlayer insulation film that ... 07/12/07 - 20070157883 - Device for coating both sides of substrates with a hydrophobic layer A device for coating both sides of a substrate with a hydrophobic layer in a vacuum coating system has a substrate holder, a first evaporator arranged one side of said substrate bolder for evaporating a substance forming the hydrophobic layer, and a second evaporator arranged on another side that is ... 07/12/07 - 20070157882 - Producing method of semiconductor device and substrate processing apparatus Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1) carried in the process chamber (4), a step for supplying ... 07/05/07 - 20070151514 - Apparatus and method for hybrid chemical processing In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body, and delivery sub-assemblies coupled to the lid assembly and configured to deliver process gases into a centralized expanding conduit, ... 06/28/07 - 20070144438 - Systems and methods of forming refractory metal nitride layers using disilazanes A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound. ... 06/28/07 - 20070144437 - Epitaxial apparatus This epitaxial apparatus includes: a supporting member to support a substrate; an external wall that is provided to surround the supporting member from the sides and that has a gas supply port for supplying gas on the substrate; an inner lid member provided in a removable manner on the external ... 06/28/07 - 20070144436 - Gas coupler for substrate processing chamber A gas coupler is capable of conducting gas between a gas component, gas source and substrate processing chamber. The gas coupler comprises a metal block comprising a gas component seating surface having a plurality of gas component coupling ports. The block also has a plurality of sidewalls at right angles ... 06/28/07 - 20070144435 - Adjusting mechanism and adjusting method thereof An adjusting mechanism adjusts a boat to be parallel to a furnace having an opening and a receiving space, which has a first symmetrical line. When the boat having a second symmetrical line is inserted into the space, a first gap area is formed between sidewalls of the space and ... 06/21/07 - 20070137567 - Apparatus for manufacturing a semiconductor device An apparatus for manufacturing a semiconductor device, including a process chamber which holds a substrate to be subjected to a prescribed process, a gas inlet pipe which introduces a process gas into the process chamber, a gas outlet pipe which discharges the gas from the process chamber to outside the ... 06/21/07 - 20070137566 - Modular device for coating surfaces The invention relates to a vacuum chamber for coating items (10) in which a physical vapor deposition method (PVD) is carried out. The aim of the invention is to create a vacuum chamber of the aforementioned kind which can be provided with modular cathodes. For this purpose, the vacuum chamber ... 06/14/07 - 20070131169 - Methods, systems, and apparatus for uniform chemical-vapor depositions Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common technique for forming layers is called chemical-vapor deposition (CVD.) Conventional CVD systems not only form layers that have non-uniform thickness, but also have large chambers that ... 06/14/07 - 20070131168 - Gas supplying unit and substrate processing apparatus The invention relates to a gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate. The gas supplying unit includes a plurality of nickel members. A large number of gas-supplying holes is ... 06/14/07 - 20070131167 - Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and ... 05/31/07 - 20070119369 - Method for producing reactive intermediates for transport polymerization A method of producing a reactive intermediate having at least two free radicals from a precursor having a general formula of Xm—Ar—(CZ′Z″Y)n via a reactor made at least partially of a material M that is reactive with the precursor to produce at least one of MaYb and McXd is disclosed. ... 05/24/07 - 20070113783 - Band shield for substrate processing chamber A band shield for a substrate processing chamber has a cylindrical wall with a slit therethrough. A flange extends radially outward from a bottom end of the cylindrical wall. A casing extends radially outwardly from a top end of the cylindrical wall and wraps around the slit to join to ... 05/17/07 - 20070107660 - Heated gas box for pecvd applications A method and apparatus for a chamber for chemical vapor deposition on a substrate in a processing region comprising a gas box having a heated lid comprising a gas inlet passage, and a face plate connected to the heated lid positioned to conduct gas from the heated gas box to ... 05/03/07 - 20070095285 - Apparatus for cyclical depositing of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber. ... 05/03/07 - 20070095284 - Gas treating device and film forming device A gas treating device includes a mounting base to support a substrate, a treatment container, a post mix type shower head, and a gas supply mechanism having a source gas flow path to supply a source gas to the shower head and an oxidizing gas supply path to supply an ... 05/03/07 - 20070095283 - Pumping system for atomic layer deposition A pumping apparatus for evacuating a reactant from a reactive region includes a vacuum able chamber, a hearth for supporting a workpiece, one or more gas introduction valves, one or more exhaust evacuation valves, and an adjustable valve providing one or more pathways there through formed by alignment of separate ... 05/03/07 - 20070095282 - Apparatus for manufacturing semiconductor device with pump unit and method for cleaning the pump unit An apparatus for manufacturing a semiconductor device includes a chamber and an exhaust system for exhausting byproducts from the chamber and adjusting an internal pressure of the chamber. The exhaust system includes an exhaust pipe connected to the chamber, a pump unit coupled with the exhaust pipe, and a cleaning ... 05/03/07 - 20070095281 - System and method for power function ramping of microwave liner discharge sources One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power ... 04/26/07 - 20070089674 - Precursor material delivery system with thermal enhancements for atomic layer deposition A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. At least a portion of the flow path may be formed in one or more blocks of thermally conductive material ... 04/19/07 - 20070084404 - Reactor surface passivation through chemical deactivation Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A ... 04/19/07 - 20070084404 - Reactor surface passivation through chemical deactivation Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A ... 04/12/07 - 20070079760 - Vaporizer and semiconductor processing system A vaporizer for generating a process gas from a liquid material includes a container defining a process space of the vaporizer, and an injector having a spray port configured to spray the liquid material in an atomized state downward in the container. A lower block is disposed below the spray ... 04/12/07 - 20070079759 - Ampoule splash guard apparatus Embodiments of the invention provide an apparatus for generating a precursor gas used in a vapor deposition process system. The apparatus contains a canister or an ampoule for containing a chemical precursor and a splash guard contained within the ampoule. The splash guard is positioned to obstruct the chemical precursor ... 04/12/07 - 20070079758 - Wide range pressure control using turbo pump The present invention is an apparatus and method for controlling a process flow rate and a pressure in a vacuum process chamber that is evacuated by a turbomolecular pump. A throttle valve between the pump and the process chamber is controlled to regulate the pressure and flow rate. A backing ... 04/05/07 - 20070074662 - Plasma processing apparatus for forming film containing carbons on object to be deposited There is disclosed a plasma processing apparatus for making a gas including hydrocarbon plasma and forming a film including carbons on an object to be coated with a film. The apparatus includes a first reaction chamber for performing a first plasma process on the object to be deposited, a second ... 04/05/07 - 20070074661 - Cvd reactor with stabilized process chamber height The invention relates to a CVD reactor which comprises a process chamber, disposed inside a reactor housing and having process chamber walls, a process chamber bottom and a process chamber ceiling spaced apart by a distance from the process chamber bottom. The reactor housing comprises at least one reactor wall ... 04/05/07 - 20070074660 - Thermal processing appratus and thermal processing method The thermal processing apparatus of the present invention includes: a processing container for containing an object to be processed; a plurality of heaters for heating the object to be processed; a plurality of temperature sensors for respectively detecting temperatures at a plurality of predetermined positions in the processing container; a ... 03/29/07 - 20070068454 - Jig for manufacturing semiconductor devices and method for manufacturing the jig A jig is used for dicing a semiconductor device on which a plurality of chip regions are formed. The jig includes partitions that forms grids and a bottom wall the partitions are supported. When the semiconductor wafer is placed on the jig, the partitions support dicing regions of the semiconductor ... 03/22/07 - 20070062448 - Cvd apparatus of improved in-plane uniformity A CVD apparatus includes a vertical boat extending in a vertical direction and capable of holding plural substrates in a horizontal state such that the substrates are aligned in the vertical direction, an inner tube extending in the vertical direction and provided so as to surround the boat laterally, an ... 03/08/07 - 20070051311 - System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process Via holes are formed in a continuous inline shadow mask production system by depositing a first conductor layer and subsequently depositing a first insulator layer over a portion of the first conductor layer. The first insulator layer is deposited in a manner to define at least one notch along its ... 03/08/07 - 20070051310 - Semiconductor manufacturing apparatus A semiconductor manufacturing apparatus has a nozzle with a plurality of tiny holes. The nozzle Is connected to a vacuum pump through a valve without closing its end so as to be evacuated and purged independently of the reaction chamber. ... 03/08/07 - 20070051309 - Pump ring A pump ring. The pump ring is suitable for a reaction chamber and capable for extracting gas from the reaction chamber in a uniform gas flow rate. The pump ring comprises a ring body and a top ring part located on the ring body. The top ring part is apart ... 03/01/07 - 20070044714 - Method and apparatus for maintaining a cross sectional shape of a diffuser during processing A diffuser for delivering one or more process gasses to a reaction region inside a chamber. The diffuser includes a first plate having a first coefficient of thermal expansion and a second plate coupled to the first plate. The second plate has a second coefficient of thermal expansion that is ... 02/22/07 - 20070039550 - Pulsed mass flow delivery system and method A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller ... 02/22/07 - 20070039549 - Pulsed mass flow delivery system and method A system for delivering a desired mass of gas, including a chamber, a first valve controlling flow into the chamber, a second valve controlling flow out of the chamber, a pressure transducer connected to the chamber, an input device for providing a desired mass to be delivered, and a controller ... 02/08/07 - 20070028839 - Method and apparatus for an improved deposition shield in a plasma processing system The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield. ... 02/08/07 - 20070028838 - Gas manifold valve cluster The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and ... 02/08/07 - 20070028837 - An apparatus for plasma treatment The present invention provides an apparatus (10) for plasma treatment of a substrate surface (16). The apparatus comprises a plasma source (12) for generating a plasma and a plasma-control electrode (14). The apparatus further comprises a drive means for effecting a relative movement between the plasma-control electrode (14) and the ... 02/01/07 - 20070022953 - Source gas-supplying unit and chemical vapor deposition apparatus having the same A source gas-supplying unit may include a chamber for receiving a liquid source. A first pipe may extend into the chamber to dip into the liquid source. The first pipe may provide a carrier gas to bubble through the liquid source to generate a vapor source. A second pipe may ... 02/01/07 - 20070022952 - Unique passivation technique for a cvd blocker plate to prevent particle formation Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker ... 02/01/07 - 20070022951 - Sensor for pulsed deposition monitoring and control Delivery of gas by a pulsed gas delivery device is monitored using a sensor. The sensor may include a source that generates radiation at a spectral range that includes an absorption frequency of the gas being delivered. The radiation is transmitted through a receptacle into which the delivered gas has ... 01/25/07 - 20070017444 - Rotatable valve A rotatable valve allows the flow of a fluid to be switched between at least two different paths by rotating an element within the valve. Advantageously, both the housing of the valve and the rotatable element within the housing are formed of glass, making the valve resistant to corrosion. The ... 12/28/06 - 20060288935 - Film formation method and apparatus for semiconductor process In a film formation method for a semiconductor process, a target substrate having a target surface with a natural oxide film is loaded into a reaction chamber, while setting the reaction chamber at a load temperature lower than a threshold temperature at which the natural oxide film starts being stabilized. ... 12/28/06 - 20060288934 - Electrode assembly and plasma processing apparatus An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented so that a worsening of the ability to carry out maintenance can be prevented. An upper electrode assembly has an ... 12/28/06 - 20060288933 - Chemical vapor deposition reactor A chemical vapor deposition reactor is provided. The chemical vapor deposition reactor includes a deposition chamber, a substrate within the deposition chamber, at least two inlet ports extending into the deposition chamber for supplying a first and a second gases to the deposition chamber respectively and a particle source for ... 12/21/06 - 20060283390 - Semiconductor manufacturing apparatus enabling inspection of mass flow controller maintaining connection thereto An opening/closing of a plurality of valves are controlled so that a plurality of gases flow into a chamber in an operation of a semiconductor manufacturing apparatus, and the opening/closing of the plurality of valves are controlled so that a gas A flows into mass flowmeters in an inspection of ... 12/21/06 - 20060283389 - System for growing silicon carbide crystals A system for growing silicon carbide crystals on substrates is described and comprises a chamber (1) which extends along an axis, wherein the chamber (1) has separate input means (2, ;) for gases containing carbon and for gases containing silicon, substrate support means (4) disposed in a first end zone ... 12/14/06 - 20060278162 - Vacuum treatment apparatus and vapor deposition apparatus It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to ... 12/07/06 - 20060272578 - Cvd reactor comprising a photodiode array The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body ... 12/07/06 - 20060272577 - Method and apparatus for decreasing deposition time of a thin film A method and apparatus for decreasing deposition time of a thin film are disclosed. The apparatus includes a removable shield assembly disposed in a vacuum chamber. The shield assembly forms an enclosure to house a substrate during an ALD process. A gas line coupled to the shield assembly introduces a ... 11/30/06 - 20060266289 - Reaction system for growing a thin film An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to ... 11/30/06 - 20060266288 - High plasma utilization for remote plasma clean A method and apparatus for cleaning a chemical vapor deposition chamber are provided. The chemical vapor deposition chamber includes an inlet that introduces reactive species into the chamber from a remote plasma source while bypassing a gas distribution assembly of the chamber and an inlet that introduces reactive species from ... 11/30/06 - 20060266287 - Method and system for passivating a processing chamber A method and system for passivating a processing chamber is provided, whereby the processing chamber is exposed to one or more cycles of citric acid, or nitric acid. The processing chamber is fabricated, for example, from stainless steel. Each cycle may be performed at a pressure greater than atmospheric pressure, ... 11/23/06 - 20060260544 - Substrate processing and method of manufacturing device A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of ... 11/16/06 - 20060254516 - Heating element cvd system and heating element cvd metod using the same A heating element CVD system and a heating element CVD method which are capable of forming a high quality polycrystalline silicon film (polysilicon film) as a device in the case of producing a silicon film by using a heating element CVD system. The heating element CVD system and the heating ... 11/16/06 - 20060254515 - Deposition tool cleaning process having a moving plasma zone The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The ... 11/16/06 - 20060254514 - Catalyst enhanced chemical vapor deposition apparatus A catalyst enhanced chemical vapor deposition (CECVD) apparatus is provided in which the showerhead and catalyst support are separated from each other. The CECVD apparatus has excellent spacing between the showerhead, catalyst wire and substrate and can be purged to prevent contaminants from forming on parts functioning at low temperatures. ... 11/16/06 - 20060254513 - Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be ... 11/16/06 - 20060254512 - Apparatus for attachment of semiconductor hardware A plasma processing method and system including an apparatus and method for securing semiconductor hardware without the use of exposed threaded hardware. Consistent mechanical and electrical contact between parts in the assembled condition can also be achieved. ... 11/02/06 - 20060243207 - Fluid mixing and delivery system A gas mixing and delivery system includes a first gas supply vessel including a first gas stored at a first pressure, a second gas supply vessel including a second gas stored at a second pressure, and a mixing vessel connected to each of the first and second gas supply vessels. ... 10/19/06 - 20060231026 - Vapor deposition systems having separate portions configured for purging using different materials A vapor deposition system can include a first portion of the vapor deposition system that is configured to be purged using a first material and a second portion that is configured to be purged using a second material. Related methods are also disclosed. ... 10/12/06 - 20060225650 - Atomic layer deposition apparatus with point of use generated reactive gas species An apparatus for atomic layer deposition preventing mixing of a precursor gas and input gas is disclosed. From the apparatus a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity ... 10/12/06 - 20060225649 - Deposition reactor and method of determining its diffuser A deposition reactor for use in depositing a film of oxide having a high permittivity or dielectric constant on a wafer. The reactor includes a diffuser whose front face is formed so that the gap between a peripheral part and an upper face of the wafer to be treated decreases ... 10/05/06 - 20060219170 - Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency A pore cathode for use in a deposition chamber for the plasma enhanced deposition of photovoltaic materials onto one or more webs of substrate material. The cathode is planar and serves the dual functions of (1) an electrode for the plasma deposition process and (2) a distribution conduit for the ... 10/05/06 - 20060219169 - Hdp-cvd seasoning process for high power hdp-cvd gapfil to improve particle performance A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at ... 10/05/06 - 20060219168 - Solid precursor vaporization system for use in chemical vapor deposition A solid precursor vaporization system configured for use in a deposition system, such as thermal chemical vapor deposition (TCVD), is described. The solid precursor vaporization system comprises a plurality of concentric solid precursor cylinders supported on a gas distribution plate and configured to provide a substantially constant surface area as ... 10/05/06 - 20060219167 - Apparatus and method of vacuum metallic sintering for a semiconductor An apparatus and method of vacuum metallic sintering for a semiconductor uses a quartz tube, a vacuum air-extracting apparatus, a furnace and a gas injection pipe. The metal sintered does not produce metal oxide in a vacuum established by the vacuum air-extracting apparatus. After sintering, a movable furnace can withdraw ... 09/28/06 - 20060213441 - Apparatus and method for controlled application of reactive vapors to produce thin films and coatings A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method ... 09/28/06 - 20060213440 - Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas ... 09/28/06 - 20060213439 - Plasma enhanced atomic layer deposition system having reduced contamination A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to ... 09/28/06 - 20060213438 - Plasma enhanced atomic layer deposition system A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first ... 09/28/06 - 20060213437 - Plasma enhanced atomic layer deposition system A plasma enhanced atomic layer deposition (PEALD) system includes a processing chamber defining an isolated processing space within the processing chamber, and a substrate holder provided within the processing chamber and configured to support a substrate. A first process material supply system is configured to supply a first process material ... 09/28/06 - 20060213436 - Substrate processing apparatus A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space ... 09/21/06 - 20060207506 - Heated gas line body feedthrough for vapor and gas delivery systems and methods of employing same A feedthrough device for use in deposition chambers such as chemical vapor deposition chambers and atomic layer deposition chambers and methods using the same in association with such chambers as well as chambers so equipped. The feedthrough device includes an associated heating device to maintain the temperature of the feedthrough ... 09/21/06 - 20060207505 - Method and apparatus for forming multi-layered thin film by using photolysis chemical vapor deposition A method of forming a multi-layered thin film uses photolysis chemical vapor deposition (PCVD). In the method, a substrate for a process of forming the multi-layered thin film is prepared. At least two source gases are supplied to the substrate. Reaction lights having particular wavelengths are prepared, which are absorbed ... 09/21/06 - 20060207504 - Film formation method and apparatus for semiconductor process A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply ... 09/21/06 - 20060207503 - Vaporizer and method of vaporizing a liquid for thin film delivery A vaporizer including an inlet for liquid and an outlet for gas, a gas valve controlling gas flow to the outlet of the vaporizer, and means for heating liquid flowing between the liquid inlet and the gas valve. The vaporizer also includes means for increasing a heat transfer rate of ... 09/21/06 - 20060207502 - Plasma confinement ring assemblies having reduced polymer deposition characteristics Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma ... 09/14/06 - 20060201428 - Shower head and method of fabricating the same Provided is a shower head used in a reactor for thin film deposition, and a method of fabricating the shower head. The shower head for injecting gases onto a wafer mounted on a wafer block includes: a first supply path supplying a first reaction gas and a second supply path ... 09/14/06 - 20060201427 - Cvd coating device The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate ... 09/14/06 - 20060201426 - Reactor for producing reactive intermediates for transport polymerization A reactor system for removing a leaving group from a gas-phase precursor to form a gas-phase radical species for transport polymerization is disclosed, wherein the reactor system comprises a reactor body, a plurality of reactor passages extending at least partially through the reactor body, and a heater body disposed in ... 09/14/06 - 20060201425 - Precursor preparation for controlled deposition coatings We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different ... 09/07/06 - 20060196421 - Apparatus for the deposition of high dielectric constant films An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and ... 09/07/06 - 20060196420 - High density plasma chemical vapor deposition apparatus A high density plasma chemical vapor deposition apparatus includes an upper gas supply nozzle which includes a nozzle body, a gas supply passage formed vertically in the nozzle body, a nozzle cover attached to a lower surface of the horizontal portion of the nozzle body, and a plurality of gas ... 09/07/06 - 20060196419 - Method and system for coating sections of internal surfaces A method and system for coating the internal surfaces of a localized area or section of a workpiece is presented. Conductive structures are inserted into one or more openings of a workpiece to define the section to be coated. In some embodiments, a bias voltage is connected to a workpiece ... 09/07/06 - 20060196418 - Apparatuses and methods for deposition of material on surfaces An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas ... 09/07/06 - 20060196417 - Gas distribution systems for deposition processes Gas distribution systems for deposition processes and methods of using the same. A substrate support member holding a substrate is disposed in a processing chamber. A plurality of first and second gas nozzles is connected to a gas distribution ring disposed in the processing chamber. The first gas nozzles provide ... 08/31/06 - 20060191478 - High density plasma cvd chamber The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a ... 08/31/06 - 20060191477 - Apparatus for the formation of a metal film An apparatus for forming a metal film, including a reaction vessel in which a substrate to be treated is placed, a raw material gas feed pipe inserted into the inlet vessel for feeding chlorine or hydrogen chloride, a spiral tube attached to the inner end of the raw material gas ... 08/24/06 - 20060185593 - Chemical vapor deposition system and method of exhausting gas from the system A chemical vapor deposition system is provided. In the chemical vapor deposition system, an amount of a first reaction gas remaining between a process chamber and a first reaction gas supplying unit is exhausted to a vacuum pump, and an amount of a second reaction gas remaining between the process ... 08/24/06 - 20060185592 - Vertical batch processing apparatus A vertical batch processing apparatus is configured to transform a semiconductor oxide film on target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film. The apparatus includes a first process gas supply circuit having ... 08/24/06 - 20060185591 - High temperature chemical vapor deposition apparatus Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 100 torr are provided. The apparatus is provided with a feeding system having injection means for differential ... 08/24/06 - 20060185590 - High temperature chemical vapor deposition apparatus Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 10 torr are provided. The apparatus is provided with means for defining a volume space in the ... 08/24/06 - 20060185589 - Silicon gas injector and method of making A gas injector tube usable in a batch thermal treatment oven including two silicon shells joined together with an adhesive formed of a fine silicon powder and a curable silica-forming agent, such as a spin-on glass, which is ultrasonically homogenized. The tube may have a gas outlet on its distal ... 08/03/06 - 20060169208 - Substrate processing apparatus and substrate processing method A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into ... 08/03/06 - 20060169207 - Semiconductor manufacturing apparatus capable of preventing adhesion of particles A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the ... 08/03/06 - 20060169206 - Load lock system for ion beam processing A load lock system includes a first load lock defining a first chamber, a second load lock defining a second chamber, and a vacuum pumping system to vacuum pump the first and second chambers. The vacuum pumping system includes a high vacuum pump, a first valve to connect the first ... 07/27/06 - 20060162658 - Ruthenium layer deposition apparatus and method An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate ... 07/27/06 - 20060162657 - Confinement ring drive A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. ... 07/27/06 - 20060162656 - Reduced volume, high conductance process chamber A vacuum processing apparatus including a process chamber having a plurality of pumping ports, and a plurality of pumping cells each connected to a respective pumping port of the plurality of pumping ports. The plurality of pumping ports is preferably located on a lower wall of the process chamber adjacent ... 07/20/06 - 20060156981 - Wafer support pin assembly A semiconductor wafer support pin assembly. A susceptor has at least three support pins configured to raise a wafer above the top surface of the susceptor. Each support pin includes and upper pin and a lower pin, which lock together by means of a quick-release mechanism in the form of ... 07/20/06 - 20060156980 - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first ... 07/20/06 - 20060156979 - Substrate processing apparatus using a batch processing chamber Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform ... 07/13/06 - 20060150907 - Method and device for blacking components The invention concerns a method for blacking components. In order to develop a method which creates black surfaces on components which are not inclined to peal off, and in which no fluids or baths are used which are expensive to produce, maintain or dispose of, it is proposed that the ... 07/13/06 - 20060150906 - Wafer boat for reduced shadow marks Wafer boats include three or more boat rods having recesses ground into them to support wafers. Recess heights are increased relative to conventional boats in order to reduce shadow marks in layers deposited by chemical vapor deposition (CVD) employing BTBAS or other CVD processes that are particularly sensitive to shadow ... 07/13/06 - 20060150905 - Substrate processing apparatus A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the ... 07/13/06 - 20060150904 - Substrate-processing apparatus and method of producing a semiconductor device A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the ... 07/06/06 - 20060144334 - Method and apparatus for deposition of low dielectric constant materials A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has ... 07/06/06 - 20060144333 - Atomic layer deposition apparatus and method An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first deposition precursor is fed to the chamber under first vacuum conditions effective to form a first monolayer on the substrate. The first vacuum conditions are maintained at least in part by a ... 07/06/06 - 20060144332 - Controlled flow of source material via droplet evaporation A system for delivering a controlled and stable flow of vaporizable source material for use in semiconductor manufacturing applications. The system includes a droplet generator, which includes a plurality of nozzles and a pressure producing means. When sufficient pressure is applied to a liquefied or liquefiable source material, droplets of ... 06/29/06 - 20060137608 - Atomic layer deposition apparatus An atomic layer deposition (ALD) apparatus is, suitable for thermal ALD and plasma-enhanced ALD of conductive and non-conductive films. The ALD apparatus can maintain electrical insulation of a gas dispersion structure, such as a showerhead assembly, which acts as an RF electrode to generate plasma inside a reaction chamber while ... 06/29/06 - 20060137607 - Combination of showerhead and temperature control means for controlling the temperature of the showerhead, and deposition apparatus having the same A chemical vapor deposition apparatus has a showerhead, and temperature control apparatus including a heater and a heat dissipation plate for regulating the temperature of the showerhead. The showerhead includes a bottom plate having gas spray openings, and an upper plate. The heater is disposed on an upper plate of ... 06/29/06 - 20060137606 - High density plasma chemical vapor deposition apparatus for manufacturing semiconductor A high-density plasma CVD apparatus designed to allow an angle of gas injectors to be adjusted according to an etching rate of a chemical mechanical polishing process. The apparatus comprises a deposition chamber constituted by an upper chamber equipped to an upper portion of the deposition chamber and a lower ... 06/22/06 - 20060130759 - Substrate processing system for performing exposure process in gas atmosphere A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber. The substrate processing system is used, for example, for performing an exposure process of an organic film formed on a substrate in a gas atmosphere obtained by vaporizing an organic solvent solution for dissolving ... 06/22/06 - 20060130758 - Methods and arrangement for the reduction of byproduct deposition in a plasma processing system In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region ... 06/22/06 - 20060130757 - Apparatus for active dispersion of precursors An apparatus for controlling precursor chemistry. The apparatus includes a chamber including a mixing space, at least one input coupled to the mixing space; and at least one output coupled to the mixing space. A motor subassembly coupled to the chamber and coupled to a mixing element in the mixing ... 06/22/06 - 20060130756 - Self-cooling gas delivery apparatus under high vacuum for high density plasma applications A gas distributor for use in a semiconductor processing chamber is provided. The gas distributor comprises a gas inlet, a gas outlet, and a stem section having a spiral thread. The gas distributor further comprises a body having a gas deflecting surface that extends radially outward away from the stem ... 06/22/06 - 20060130755 - Pulsed mass flow measurement system and method A system for measuring a pulsed mass flow rate of gas passing from an upstream source of gas to a downstream process chamber through an on/off type valve of the source of gas. The system includes a passageway for connecting the source of gas to the process chamber, a flow ... 06/15/06 - 20060124058 - Substrate processing device A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, ... 06/08/06 - 20060118041 - Guard ring A guard ring for a deposition apparatus, wherein when a wafer is placed on a deposition apparatus and the guard ring is placed to surround the wafer, the a top surface of the guard ring adjacent to the wafer is higher than or equal to that of the wafer. Moreover, ... 06/08/06 - 20060118040 - Chemical vapor deposition apparatus having a reaction chamber condition detection function and a detection method thereof A chemical vapor deposition apparatus includes a heating holder positioned in a reaction chamber, a shower head positioned substantially parallel to and above the heating holder, and a reaction chamber condition detector electrically connected to the heating holder and the shower head. The heating holder and the shower head form ... 06/01/06 - 20060112877 - Nozzle and plasma apparatus incorporating the nozzle Provided are improved nozzles suitable for injecting source gases or other gases into a plasma chamber in which the gas is conveyed along a single passage or channel to an outlet region at which point the single channel is divided into a plurality of outlet channels. The outlet channels are ... 06/01/06 - 20060112876 - Semiconductor processing apparatus A semiconductor processing apparatus, designed to inject reactant gas with uniform pressure and flux therein, includes a chamber in which a process is performed, a gas supply to supply reactant gas to the chamber, a gas dispenser having a plurality of nozzles to inject the reactant gas into the chamber, ... 05/25/06 - 20060107898 - Method and apparatus for measuring consumption of reactants A method and apparatus for measuring the consumption of reactants includes a partial pressure sensor for measuring the partial pressure of a reactant in a reactant stream. The partial pressure sensor includes a first pressure sensor that has a first sensitivity to the composition of the gas stream and a ... 05/18/06 - 20060102077 - Vacuum treatment system A vacuum treatment system (1) for treating workpieces has a treatment chamber (10) that can be evacuated and in which a low-volt arc-discharge device is placed, with at least one locking loading/unloading aperture and at least one coating source placed on one side wall of the treatment chamber. It also ... 05/18/06 - 20060102076 - Apparatus and method for the deposition of silicon nitride films A method and apparatus for a chemical vapor deposition (CVD) chamber provides uniform heat distribution, uniform distribution of process chemicals in the CVD chamber, and minimization of by-product and condensate residue in the chamber. The improvements include a processing chamber comprising a chamber body, a base, and a chamber lid ... 05/11/06 - 20060096534 - Apparatus for depositing thin film on wafer A thin film deposition apparatus that can effectively use a chemical source having a high vaporization temperature is provided. The thin film deposition apparatus includes a chamber for depositing a thin film on a wafer, a canister for accommodating a liquid chemical source to be supplied to the chamber, and ... 05/11/06 - 20060096533 - Fluid control device A body 2 comprises a center channel block 11 and side channel blocks 12, 13. Each of shut-off valves 5, 6 is removably mounted on both the center channel block and one of the side channel blocks. The center channel block has Y-shaped channels 22 identical in number with the ... 05/11/06 - 20060096532 - Thin film forming apparatus The present invention relates to a thin forming apparatus, i.e. an apparatus for forming thin films of various materials on substrates, for example, in processes of fabricating semiconductor wafers or liquid crystal displays (LCDs). The thin film forming apparatus comprises a substrate support for mounting a substrate on which a ... 05/11/06 - 20060096531 - Processing device and processing method A chamber having an approximately triangular transverse cross section is provided with a gas supply opening at its one side, and is provided with an exhaust opening at a vertex facing the one side. Further, the gas supply opening is provided with a showerhead-like gas supply section. Based on this ... 05/04/06 - 20060090700 - Gas-introducing system and plasma cvd apparatus A gas-introducing system for plasma CVD and cleaning includes: a showerhead including a top plate with a gas inlet port and a shower plate; a rectifying plate installed in the interior space of the showerhead and dividing the interior space into an upper space and a lower space; a structure ... 05/04/06 - 20060090699 - Thermal spraying apparatus and also a thermal spraying process The invention relates to a thermal spraying apparatus (1) for coating a surface (2) of a substrate (3) by means of a coating material (4). The thermal spraying apparatus (1) includes a spray pistol (5) with a heating device for heating the coating material (4) in a heating zone (6) ... 04/27/06 - 20060086319 - Processing gas supply mechanism, film forming apparatus and method, and computer storage medium storing program for controlling same A processing gas supply mechanism installed on a processing chamber of a film forming apparatus for supplying a processing gas containing a metal organic compound onto a substrate to be processed includes a processing gas inlet opening for introducing the processing gas, a diffusion space for diffusing the processing gas ... 04/27/06 - 20060086318 - Gas diffusion plate In a gas diffusion plate, a plurality of through holes for passing a processing gas used in processing a substrate are provided. Each one of the through holes provided in a peripheral region of the gas diffusion plate is formed so that an area of an inlet thereof is larger ... 04/20/06 - 20060081183 - Plasma treatment processing apparatus A processing apparatus that provides a plasma treatment to an object includes a process chamber that accommodates an object to be processed, and generates plasma, a gas introducing part for introducing gas into the process chamber, and a mechanism that arranges the object at an upper side in a flow ... 04/20/06 - 20060081182 - Method of cleaning thin film deposition system, thin film deposition system and program A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls ... 04/20/06 - 20060081181 - Film forming system and film forming method A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from ... 04/06/06 - 20060070574 - Method and system for binding halide-based contaminants A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the ... 04/06/06 - 20060070573 - Apparatus and method for coating an article A coating apparatus includes a mounting member for mounting a turbine airfoil in a coating chamber. The mounting member defines a chamber therein and includes a mounting port that is adapted to receive the turbine airfoil. The mounting port provides a fluid connection between the chamber and an internal passage ... 03/30/06 - 20060065194 - Diffuser and semiconductor device manufacturing equipment having the same Semiconductor device manufacturing equipment includes a plurality of process chambers in which one or more fabrication processes takes place, a transfer chamber selectively communicating with the process chambers by means of doors, a vacuum pump and a source of vent gas which are connected to the transfer chamber via vacuum/vent ... 03/23/06 - 20060060142 - Substrate processing apparatus A substrate processing apparatus includes: a reaction tube; a gas introducing tube which is in communication with said reaction tube; a gas exhausting tube having a closing member, and a controller which controls an opening of the closing member to substantially stop exhaustion through the exhausting tube from a predetermined ... 03/23/06 - 20060060141 - Process gas introducing mechanism and plasma processing device A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas ... 03/23/06 - 20060060140 - Apparatus for treating thin film and method of treating thin film An apparatus for treating a substrate includes a stage adapted to receive the substrate; a gas shield facing the substrate and having a retention space, the gas shield including: a top plate; a bottom plate facing the substrate and having pump holes around the retention space; and a middle plate ... 03/23/06 - 20060060139 - Precursor gas delivery with carrier gas mixing A system and method are described that control the amount of precursor that is delivered to a process chamber by precisely measuring the mole fraction of the gas mixture being delivered. A gas delivery system includes a delivery chamber, a precursor inlet valve, a carrier inlet valve, an outlet valve, ... 03/23/06 - 20060060138 - Diffuser gravity support An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gasses through the diffuser and is designed to provide ... 03/23/06 - 20060060137 - Deposition of tin films in a batch reactor Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or ... 03/16/06 - 20060054088 - Vapor phase epitaxial growth apparatus and semiconductor wafer production method A vapor phase epitaxial growth apparatus, comprising a chamber, to which a wafer is fed; a gas introduction device for introducing a reaction gas into the chamber; a gas flow amount sensor for detecting a flow amount of the reaction gas introduced by the gas introduction device; heaters for heating ... 03/16/06 - 20060054087 - Process chamber for manufacturing seminconductor devices The present invention is directed to a plasma process chamber capable of maintaining a high vacuum in the idle state. The present invention maintains a high vacuum in the idle state and prevents a contamination of the wafer transferred into the process chamber. ... 03/09/06 - 20060048709 - Plasma processing apparatus Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular ... 03/09/06 - 20060048708 - Coater having interrupted conveyor system Methods and coaters for applying films onto a substrate (e.g., a large-area glass substrate) are disclosed. Certain embodiments involve a coater for applying thin films onto a sheet-like substrate. The coater in some embodiments has a transport system adapted for conveying the substrate along a path of substrate travel extending ... 03/09/06 - 20060048707 - Anti-clogging nozzle for semiconductor processing Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and ... 03/09/06 - 20060048706 - Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device by using the same In a process for manufacturing a hyperfine semiconductor device, an apparatus for manufacturing a semiconductor device such as a schottky barrier MOSFET and a method for manufacturing the semiconductor device using the same are provided. Two chambers are connected with each other. A cleaning process, a metal layer forming process, ... 03/02/06 - 20060042544 - Film formation apparatus and method of using the same A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction ... 02/23/06 - 20060037536 - Plasma resistant member, manufacturing method for the same and method of forming a thermal spray coat The present invention concerns a plasma resistant member comprising Y2O3 or YAG thermal performed thermal spray on an alumina base material, wherein the surface roughness Ra of the alumina base material is 5 μm or more and 15 μm or less. By rendering the surface layer of the alumina base ... 02/16/06 - 20060032445 - Substrate processing apparatus and method, and gas nozzle for improving purge efficiency A substrate processing apparatus capable of efficiently purging not only a process space but also the inside of a processing gas feed nozzle when a multi element compound film is formed on a substrate by laminating a molecular layer thereon, wherein an exhaust line is connected to one end of ... 02/16/06 - 20060032444 - Film forming apparatus and film forming method A thin film formation apparatus that introduces, in a first operational phase thereof, a source gas into a processing vessel capable of being evacuated and accommodating a substrate to be processed, and forms a thin film on the substrate by causing a reaction in the introduced source gas. The apparatus ... 02/16/06 - 20060032443 - Film formation method and apparatus for semiconductor process An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a ... 02/16/06 - 20060032442 - Method and apparatus for forming silicon oxide film A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with an Si-containing gas, an oxidizing gas, and a deoxidizing gas. This method alternately includes first to fourth steps. The first step is arranged to perform supply of the ... 02/16/06 - 20060032441 - Method and apparatus for recycling inert gas A method for recycling an inert gas evacuated from a material deposition process chamber 10 comprises cooling the evacuated inert gas and recirculating a proportion of the cooled gas to the chamber 10 at a first temperature for use as a cooling gas in the material deposition process 12, and ... 02/16/06 - 20060032440 - Apparatus and method for depositing a material on a substrate Apparatus and a method for depositing a material on a substrate utilizes a distributor including a permeable member through which a carrier gas and a material are passed to provide a vapor that is deposited on a conveyed substrate. A secondary gas can be provided to promote uniform distribution of ... 02/09/06 - 20060027167 - Processing apparatus and processing method A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process ... 02/09/06 - 20060027166 - Substrate processing apparatus and substrate processing method using such substrate processing apparatus A substrate processing apparatus vacuum reactor is internally divided into an upper part and a lower part that are separated from each other by an electrically conductive partitioning plate grounded. The upper part of the vacuum reactor is a plasma discharge space in which an rf electrode is arranged, and ... 02/09/06 - 20060027165 - Heated gas box for pecvd applications Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber ... 02/02/06 - 20060021574 - Multi-gas distribution injector for chemical vapor deposition reactors A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and ... 02/02/06 - 20060021573 - Vapor deposition systems and methods Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages. ... 02/02/06 - 20060021572 - High vacuum plasma-assisted chemical vapor deposition system The invention is directed to a novel approach to thin film synthesis that is described as high vacuum plasma-assisted chemical vapor deposition (HVP-CVD). In one application of HVP-CVD, atomic oxygen and organometallic precursors are simultaneously introduced into a high vacuum chamber. Gas-phase chemistry is eliminated or substantially eliminated in the ... 02/02/06 - 20060021571 - Vacuum pump line with nickel-chromium heater layer A vacuum pump line for a process chamber is disclosed. The vacuum pump line includes a pump line wall and a heater layer comprising a nickel-chromium alloy surrounding the pump line wall for heating the pump line wall. A method for fabricating a pump line for a process chamber is ... 01/26/06 - 20060016395 - Plasma processing apparatus Disclosed is a plasma processing apparatus including a plasma producing chamber into which a microwave and a plasma producing gas are to be introduced, a processing chamber being able to be communicated with the plasma producing chamber, a wafer table provided inside the processing chamber, for carrying thereon a wafer ... 01/12/06 - 20060005768 - Doping method, doping apparatus, and control system for doping apparatus A doping method capable of controlling a dose amount in response to a change the ratio in ion species during a doping process, a control system for controlling a doping amount, and a doping apparatus having a control system are provided. An ion current value of a specific ion in ... 01/12/06 - 20060005767 - Chamber component having knurled surface A substrate retaining clamp for a substrate processing chamber has a ring having an annular portion that surrounds a substrate in the chamber. The ring also has an overhang ledge to cover a periphery of the substrate. The retaining clamp has a knurled exposed surface of the overhang ledge that ... 01/05/06 - 20060000412 - Systems and apparatus for atomic-layer deposition The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber enclosing a substrate, forming an inner chamber within the outer chamber, and introducing an oxidant into the inner chamber, and introducing an aluminum precursor into the inner ... 01/05/06 - 20060000411 - Method of forming a layer on a semiconductor substrate and apparatus for performing the same In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A ... 12/29/05 - 20050284372 - Chamber component having grooved surface with depressions A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying component structure and a surface on the underlying structure. The surface has a plurality of concentric grooves that are radially spaced apart across the surface, and electron ... 12/29/05 - 20050284371 - Deposition apparatus for providing uniform low-k dielectric Improvements in a PECVD chamber to provide better uniformity in film thickness and mechanical strength are described. Less contact surface is provided to the outer edge of the wafer and non-uniform gas distribution occurs through adjustments to the gas distribution plate to provide this uniformity. ... 12/29/05 - 20050284370 - High rate atomic layer deposition apparatus and method of using A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce ... 12/15/05 - 20050274322 - Reactor for producing reactive intermediates for low dielectric constant polymer thin films A reactor for forming a reactive intermediate for a transport polymerization process is disclosed, wherein the reactor includes an exterior unit having an inlet, an outlet, and an interior disposed between the inlet and the outlet; a heater body located in said interior, wherein the heater body is at least ... 12/15/05 - 20050274321 - Plasma processing apparatus and method A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature ... 12/15/05 - 20050274320 - Erosion resistant process chamber components A substrate processing chamber component demonstrates reduced erosion in an energized gas. The component has a ceramic structure composed of aluminum oxide with a surface exposed to the energized gas in the chamber. The erosion of the surface by the energized gas is substantially reduced by erosion resistant properties of ... 12/01/05 - 20050263072 - Uniformity control for low flow process and chamber to chamber matching Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. ... 12/01/05 - 20050263071 - Apparatus and system for manufacturing a semiconductor The present invention provides an apparatus for manufacturing a semiconductor including: a reactor; a substrate holder for supporting a substrate; a primary gas supply unit for supplying a primary gas to the reactor; a secondary gas supply unit for supplying a secondary gas to the reactor; a first plasma generator ... 12/01/05 - 20050263070 - Pressure control and plasma confinement in a plasma processing chamber A plasma apparatus which includes a vacuum chamber provided with an exhaust port and a chuck assembly disposed inside the vacuum chamber. The plasma apparatus also includes a plasma confinement and pressure control apparatus disposed proximate to the substrate. The plasma confinement and pressure control apparatus includes a plurality of ... 11/17/05 - 20050252450 - Plasma spray method and apparatus for applying a coating utilizing particle kinetics A method of operation of a plasma torch and the plasma apparatus to produce a hot gas jet stream directed towards a workpiece to be coated by first injecting a cold high pressure carrier gas containing a powder material into a cold main high pressure gas flow and then directing ... 11/17/05 - 20050252449 - Control of gas flow and delivery to suppress the formation of particles in an mocvd/ald system The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the ... 11/17/05 - 20050252448 - Apparatus and method for preventing residual gases from polluting wafer An apparatus for preventing a residual gas from polluting a wafer is provided. The apparatus mainly includes a chemical vapor deposition (CVD) station, a delivery pipeline, a purge pipeline and a check valve. The delivery pipeline is connected to the CVD station and the purge pipeline is connected to the ... 11/17/05 - 20050252447 - Gas blocker plate for improved deposition Embodiments of the present invention are directed to a blocker for a gas distribution system for use in semiconductor deposition apparatus. The gas distribution system includes a faceplate having a plurality of faceplate apertures to distribute a gas flow onto a surface of a substrate disposed downstream of the faceplate ... 11/03/05 - 20050241581 - Chemical vapor deposition apparatuses and deposition methods A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of ... 11/03/05 - 20050241580 - Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas Disclosed are thin film deposition system and method. The thin film deposition system includes a reaction chamber; at least one susceptor installed in the reaction chamber for mounting a substrate thereon; a first gas sprayer rotatably located above the susceptor; and at least one second gas sprayer installed above the ... 11/03/05 - 20050241579 - Face shield to improve uniformity of blanket cvd processes A gas delivery assembly for uniform gas flow within a processing system is provided. In one aspect, a gas delivery assembly includes sidewalls at least partially disposed about a gas delivery component disposed within the processing system. The gas delivery shield also includes a bottom wall having a varied profile ... 10/20/05 - 20050229849 - High productivity plasma processing chamber Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections ... 10/20/05 - 20050229848 - Thin-film deposition apparatus A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging ... 10/13/05 - 20050223987 - Film forming apparatus A film forming apparatus according to the present invention has a source material supply section, a vaporizer, and a film forming chamber. The vaporizer comprises a nozzle which spays the liquid material supplied from the source material supply section, a vaporization chamber which has one end in which the nozzle ... 10/13/05 - 20050223986 - Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser ... 10/13/05 - 20050223985 - Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The ... 10/13/05 - 20050223984 - Chemical vapor deposition (cvd) apparatus usable in the manufacture of superconducting conductors A chemical vapor deposition (CVD) apparatus including a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, and at least one precursor composition monitor. The precursor supply system includes at least one precursor source, at least one a delivery mechanism including at ... 10/13/05 - 20050223983 - Chemical vapor deposition (cvd) apparatus usable in the manufacture of superconducting conductors A chemical vapor deposition (CVD) apparatus usable in the manufacture of a superconducting conductor on an elongate substrate is disclosed. The CVD apparatus includes a reactor, at least one substrate heater, and at least one precursor injector having a longitudinal flow distributor. Optionally, the CVD apparatus may include one of ... 10/13/05 - 20050223982 - Apparatus and method for depositing thin film on wafer using remote plasma A remote-plasma ALD apparatus includes a reaction chamber, an exhaust line for exhausting gas from the reaction chamber, a first reactive gas supply unit for selectively supplying a first reactive gas to the reactant chamber or the exhaust line, a first reactive gas transfer line for connecting the first reactive ... 10/13/05 - 20050223981 - Processing device using shower head structure and processing method A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing ... 10/06/05 - 20050217580 - Gas distribution system The present invention provides a gas distribution apparatus useful in semiconductor manufacturing. The gas distribution apparatus comprises a unitary member and a gas distribution network formed within the unitary member for uniformly delivering a gas into a process region. The gas distribution network is formed of an inlet passage extending ... 10/06/05 - 20050217579 - Method and apparatus for production of metal film or the like In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are ... 10/06/05 - 20050217578 - Reactor having a movable shutter A shutter assembly for a reactor includes a cylindrical shutter for selectively closing a passthrough opening of the reactor, the shutter forming a closed loop and including an internal cavity adapted to receive a cooling fluid, tubing connected with the cylindrical shutter for supplying the cooling fluid to the internal ... 10/06/05 - 20050217577 - Vertical type semiconductor device producing apparatus A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes ... 10/06/05 - 20050217576 - Vacuum processing apparatus A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a ... 10/06/05 - 20050217575 - Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers are disclosed herein. In one embodiment, an ampoule includes a vessel having an interior volume configured to receive a precursor with a headspace above the precursor. The ampoule further includes a carrier gas ... 09/29/05 - 20050211168 - Mixing box, and apparatus and method for producing films A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed ... 09/29/05 - 20050211167 - Processing device and processing method The ceiling surface (12b) of a chamber (12) is substantially entirely formed with a gas supply port (19). Further, the gas supply port (19) has shower head (20) fitted therein. The peripheral edge of the ceiling surface (12b) has connected thereto a second side wall (12d) forming an angle greater ... 09/22/05 - 20050205010 - In situ growth of oxide and silicon layers A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is ... 09/15/05 - 20050199185 - Convertible maintenance valve A vacuum treatment unit, especially for continuous coating of passing substrates, preferably a glass coating unit, with at least two, preferably various adjacently disposed chambers or chamber areas which by means of one or various chambers and/or separating walls are reciprocally separated and are interconnected through openings in said chamber ... 09/15/05 - 20050199184 - Gas distributor having directed gas flow and cleaning method A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a ... 09/15/05 - 20050199183 - Plasma processing apparatus The purpose of the invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The present plasma processing apparatus for processing a substrate placed on a substrate holder disposed in a processing chamber using a plasma generated in the processing ... 09/15/05 - 20050199182 - Apparatus for the preparation of film A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face ... 09/08/05 - 20050193947 - Deposition reactors and systems Methods for depositing material onto workpieces, methods of controlling the delivery of gases in deposition processes, and apparatus for depositing materials onto workpieces. One embodiment of a method for depositing material onto a workpiece comprises placing a micro-device workpiece having a plurality of submicron features in a reactor proximate to ... 09/08/05 - 20050193946 - Apparatus and method for preventing corrosion of a vacuum gauge A vacuum process apparatus for preventing corrosion of a vacuum gauge is disclosed. The apparatus includes a process chamber used to proceed a vacuum process reaction. A vacuum gauge is connected to the process chamber. A protective gas source without water vapor which supplies a protective gas without water vapor ... 09/01/05 - 20050188921 - Matrix assisted pulsed-laser evaporation technique for coating a medical device and associated system and medical device A method is provided for coating at least a portion of at least one medical device. The method includes arranging the at least one medical device in a vapor cone and directing a laser at a frozen target. The target includes an agent and the laser vaporizes the agent into ... 08/25/05 - 20050183665 - Apparatus for manufacturing flat-panel display A flat-panel display (FPD) manufacturing apparatus is disclosed which not only includes a load lock chamber, a feeding chamber, and a processing chamber, at least one of which has a vertically-stacked chamber structure to achieve an enhancement in substrate processing efficiency, but also includes a temporary substrate storing space for ... 08/25/05 - 20050183664 - Batch-type deposition apparatus having gland portion Batch-type deposition apparatus having a gland portion are provided. The apparatus include a reaction furnace, a gas nozzle located in the reaction furnace, a gas supply conduit located outside the reaction furnace and a gland portion for connecting the gas nozzle to the gas supply conduit. The gland portion includes ... 08/25/05 - 20050183663 - Systems and methods for manufacture of carbon nanotubes A horizontally-disposed reaction tube for generating multi-walled carbon nanotubes is described. Gaseous reactants and very fine solid catalyst particles are introduced into the horizontally-disposed reaction tube, and chemical reactions take place to grow multi-wall carbon nanotubes on the catalyst particles. ... 08/18/05 - 20050178327 - Pressure gradient cvi/cvd apparatus and method An apparatus and method for densifying porous structures inside a furnace using pressure gradient CVI/CVD. The apparatus includes a stack of porous structures where each porous structure has an aperture therethrough. The apparatus also includes at least one ring-like spacer disposed within the stack of porous structures between neighboring porous ... 08/11/05 - 20050172896 - Injector for plasma mass filter An injection system for introducing feed material into a plasma mass filter includes an injector for producing a jet of feed material. For a plasma mass filter having a cylindrical wall that surrounds a plasma chamber, the injector is mounted to the outside of wall and oriented to deliver a ... 08/11/05 - 20050172895 - Mocvd apparatus and mocvd method [Solving Means] An MOCVD apparatus according to the present invention is an apparatus for supplying a source gas as a mixture of an MO source gas with an oxidizing gas to a substrate 13 to thereby form a film. The MOCVD apparatus includes a substrate holder 14 for holding the ... 07/28/05 - 20050160984 - Method and apparatus for ald on a rotary susceptor A chemical vapor deposition method and apparatus is disclosed. The process is carried out in an apparatus having a number reactive zones, each surrounded by a corresponding exhaust zone, all of which are both contained within a buffer zone. Pressure relationships are controlled such that buffer gas from the buffer ... 07/28/05 - 20050160983 - Ald apparatus and method An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance. ... 07/28/05 - 20050160982 - Plasma enhanced semicondutor deposition apparatus A plasma enhanced chemical vapor deposition apparatus includes a process chamber, and at least one gas injection pipe extending within the process chamber. Each gas injection pipe has an injection region from which source gases are injected through the sidewall of the pipe into the process chamber. To this end, ... 07/28/05 - 20050160981 - Systems and methods for forming zirconium and/or hafnium-containing layers A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4 with one or more zirconium and/or hafnium precursor compounds of the ... 07/21/05 - 20050155552 - Cvd process for forming a thin film The present invention is a CVD process for forming a thin film which includes a step of recovering an organometallic compound component from an exhaust gas which has been conventionally discarded, and a purifying step of purifying the recovered organometallic compound to thereby eliminate a by-product formed in a film ... 07/21/05 - 20050155551 - Deposition apparatus and related methods including a pulse fluid supplier having a buffer A deposition apparatus for depositing a predetermined material on a semiconductor substrate includes a chamber configured to perform a deposition process and a source gas supplier having a pulse fluid supplier configured to cyclically supply a source of a source gas to the chamber. The pulse fluid supplier includes a ... 07/14/05 - 20050150456 - Processing device and method of maintaining the device, mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism A processing device in which maintenance can be easily carried out and a burden on a worker can be reduced, and a method of maintaining the device are provided. An upper electrode unit 106 structuring a ceiling portion of a processing chamber 102 of an etching device 100 is structured ... 07/14/05 - 20050150455 - Processing apparatus and processing method The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object ... 07/14/05 - 20050150454 - Deposition chamber and method for depositing low dielectric constant films An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the ... 07/14/05 - 20050150453 - Bladder-based apparatus and method for dispensing coatings The invention is related to a coating delivery system that includes at least one pressure vessel having an inner surface, a flexible bladder disposed in a first pressure vessel and having an open condition and a closed condition, an internal region disposed between the inner surface and the bladder, and ... 07/14/05 - 20050150452 - Process kit design for deposition chamber The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit ... 07/07/05 - 20050145171 - Processing method utilizing an apparatus to be sealed against workpiece A processing method is performed for processing a workpiece such as a semiconductor wafer. The processing method utilizes an apparatus comprising a cover for covering a portion of a surface, to be processed, of a workpiece, a process chamber formed by the cover and the surface, to be processed, of ... 07/07/05 - 20050145170 - Substrate processing apparatus and cleaning method therefor A substrate processing apparatus has a pressure-reducible reaction chamber, a substrate support provided in the reaction chamber, a gas inlet port provided in a wall portion of the reaction chamber to introduce a gas into the reaction chamber, a first plate provided between the substrate support and the gas inlet ... 06/30/05 - 20050139160 - Clamshell and small volume chamber with fixed substrate support Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the ... 06/16/05 - 20050126485 - Component having an interior surface coated with a thin film inert corrosion resistant barrier The present invention reduces corrosion rates on metal surfaces, such as the interior surfaces of gas flow control components by depositing a chemically inert layer on the metal surface of the component and other associated parts of the component that are exposed to corrosive gases. The disclosed method provides for ... 06/16/05 - 20050126484 - Edge flow faceplate for improvement of cvd film properties Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of ... 06/16/05 - 20050126483 - Arrangement for depositing atomic layers on substrates An arrangement for depositing atomic layers on substrates produces very thin films in an evacuable reaction chamber. Substrates or wafers are arranged on a wafer chuck and the reaction chamber is connected via valves to a source for TMA, water and a cleaning gas. The invention is intended to significantly ... 06/16/05 - 20050126482 - Forming thin film on semiconductor wafer A system and method of forming a thin film on a semiconductor wafer includes: a reaction tube adapted to provide a sealed space to process a wafer; dual wafer loading boats including a first wafer loading boat and a second wafer loading boat, the first wafer loading boat arranged within ... 06/09/05 - 20050120955 - Film forming apparatus A film forming unit includes a source vessel for receiving a raw material from which source gas is produced, a processing vessel for applying a film forming process on a semiconductor substrate, a source supply line for supplying the source gas from the source vessel to the processing vessel, a ... 06/09/05 - 20050120954 - Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow ... 06/09/05 - 20050120953 - Method of and apparatus for supplying a dynamic protective layer to a mirror A method of supplying a dynamic protective layer to a mirror in a lithographic apparatus to protect the mirror from etching by ions is disclosed. The method includes supplying a gaseous matter to a chamber that contains the mirror, monitoring reflectivity of the mirror, and controlling the thickness of the ... 06/09/05 - 20050120952 - Thermal projection device The invention relates to a device and a method for control of the operation of a thermal projection torch (12), characterized in that the characteristics of the jet (16) and the temperature of the deposit (24) on the piece (22) are measured by means of a camera (54) and a ... 06/02/05 - 20050115502 - System and method for feedforward control in thin film coating processes A system and method for feedforward control in thin film coating processes. A standard PID feedback control system that continuously monitors two or more process variables in a reactive sputtering process is combined with a feedforward control system to improve system performance. The control system enables much faster stabilization of ... 06/02/05 - 20050115501 - Processing device and method of maintaining the device A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller (15) controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage (41) ... ### FreshPatents.com Support |