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Yoshihisa Kagawa patents

Recent patents with Yoshihisa Kagawa listed as an inventor - additional entries may be under other spellings.


Yoshihisa Kagawa - Related organizations: Sony Corporation patents

Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

11/24/16 - 20160343763 - Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to
Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii

Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

11/24/16 - 20160343762 - Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to
Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii

Memory device and method of manufacturing the same

08/25/16 - 20160248004 - A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least
Inventors: Yoshihisa Kagawa

Semiconductor device and solid-state imaging device

08/11/16 - 20160233264 - The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate
Inventors: Yoshihisa Kagawa, Nobutoshi Fujii, Masanaga Fukasawa, Tokihisa Kaneguchi, Yoshiya Hagimoto, Kenichi Aoyagi, Ikue Mitsuhashi

Semiconductor device and manufacturing method

02/04/16 - 20160035777 - A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a
Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa

Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

09/24/15 - 20150270212 - Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to
Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii

Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

12/11/14 - 20140362267 - Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to
Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii

Semiconductor device and manufacturing method

09/25/14 - 20140284744 - A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a
Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa

Semiconductor device

05/29/14 - 20140145338 - A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first
Inventors: Nobutoshi Fujii, Yoshihisa Kagawa

Semiconductor apparatus, electronic device, and method of manufacturing semiconductor apparatus

05/15/14 - 20140131874 - A semiconductor apparatus, electronic device, and method of manufacturing the semiconductor apparatus are disclosed. In one example, the semiconductor apparatus comprises a first semiconductor part that includes a first wiring, and a second semiconductor part that is adhered to the first semiconductor part and which includes a second wiring electrically
Inventors: Yoshihisa Kagawa, Naoki Komai

Semiconductor memory device and a method of manufacturing the same

10/03/13 - 20130256626 - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of
Inventors: Yoshihisa Kagawa, Tetsuya Mizuguchi, Ichiro Fujiwara, Akira Kouchiyama, Satoshi Sasaki, Naomi Yamada

Semiconductor apparatus, electronic device, and method of manufacturing semiconductor apparatus

09/27/12 - 20120241961 - Disclosed herein is a semiconductor apparatus including: a first semiconductor part including a first wiring; a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and a metallic oxide formed by a reaction between oxygen and
Inventors: Yoshihisa Kagawa, Naoki Komai

Memory device and method of manufacturing the same

10/06/11 - 20110240948 - A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least
Inventors: Yoshihisa Kagawa

Semiconductor memory device and a method of manufacturing the same

02/10/11 - 20110031466 - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of
Inventors: Yoshihisa Kagawa, Tetsuya Mizuguchi, Ichiro Fujiwara, Akira Kouchiyama, Satoshi Sasaki, Naomi Yamada


### Yoshihisa Kagawa patent invention listings

The bibliographic references displayed about Yoshihisa Kagawa's patents are for a recent sample of Yoshihisa Kagawa's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Yoshihisa Kagawa filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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