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Wood, Herron & Evans, LLP (tokyo Electron) patentsThe following is a sampling of recent Wood, Herron & Evans, LLP (tokyo Electron) patent applications (USPTO Patent Application #, Patent Title) sorted by month.
April 2008 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20080087638 - Selective-redeposition sources for calibrating a plasma process
20080083615 - Thermal-stress-failure-resistant dielectric windows in vacuum processing systems
20080083731 - Inline physical shape profiling for predictive temperature correction during baking of wafers in a semiconductor photolithography process
20080078325 - Processing system containing a hot filament hydrogen radical source for integrated substrate processing
20080078504 - Self-calibrating optical emission spectroscopy for plasma monitoring
20080079111 - Semiconductor devices containing nitrided high dielectric constant films
20080079934 - Method of real time dynamic cd control
20080081110 - Apparatus and method for removing an edge bead of a spin-coated layer
20080081111 - Apparatus and method for thermally processing a substrate with a heated liquid
20080081113 - Nitrogen profile engineering in nitrided high dielectric constant films
20080081271 - Method of real time dynamic cd control
20080081464 - Method of integrated substrated processing using a hot filament hydrogen radical souce
20080081473 - Method for integrated substrate processing in copper metallization
20080081474 - Integration of a variable thickness copper seed layer in copper metallization
20080081482 - Selective-redeposition structures for calibrating a plasma process
March 2008 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20080073321 - Method of patterning an anti-reflective coating by partial etching
20080076069 - Method of patterning an anti-reflective coating by partial developing
20080076073 - Method for double imaging a developable anti-reflective coating
20080076074 - Method for double patterning a developable anti-reflective coating
20080076075 - Method for double patterning a thin film
20080053489 - Substrate cleaning method
February 2008 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20080048132 - Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipment
20080035055 - Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
20080035062 - Deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
20080035605 - Exhaust assembly for plasma processing system and method
November 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070259285 - Method for creating a built-in self test (bist) table for monitoring a monolayer deposition (mld) system
20070259534 - In-situ formation of oxidized aluminum nitride films
20070255991 - Monitoring a thermal processing system
October 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070234953 - Monitoring a monolayer deposition (mld) system using a built-in self test (bist) table
20070234955 - Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
20070234962 - System for introducing a precursor gas to a vapor deposition system
20070235319 - Multi-processing using an ionized physical vapor deposition (ipvd) system
20070235321 - Depositing rhuthenium films using ionized physical vapor deposition (ipvd)
20070235821 - Semiconductor device with gate dielectric containing mixed rare earth elements
20070235822 - Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements
20070237697 - Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
20070237698 - Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
20070237699 - Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
20070237895 - Method and system for initiating a deposition process utilizing a metal carbonyl precursor
20070238279 - Barrier deposition using ionized physical vapor deposition (ipvd)
20070238288 - Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features
20070238313 - Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing
20070239375 - Monitoring a system during low-pressure processes
20070231241 - Method and integrated system for purifying and delivering a metal carbonyl precursor
20070231489 - Method for introducing a precursor gas to a vapor deposition system
20070231757 - Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
20070232040 - Method for reducing carbon monoxide poisoning in a thin film deposition system
20070233427 - Monitoring a single-wafer processing system
September 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070221125 - Semiconductor processing system with wireless sensor network monitoring system incorporated therewith
20070224712 - Method of monitoring a semiconductor processing system using a wireless sensor network
20070224793 - Temperature-controlled metallic dry-fill process
20070215048 - Method and apparatus for reducing particle contamination in a deposition system
20070218197 - Vacuum processing system and method of making
20070218200 - Method and apparatus for reducing particle formation in a vapor distribution system
August 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070189356 - Exhaust buildup monitoring in semiconductor processing
June 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070131544 - Enhanced reliability deposition baffle for ipvd
May 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070113789 - Method and system for depositing material on a substrate using a solid precursor
20070113981 - Etch system with integrated inductive coupling
20070105392 - Batch photoresist dry strip and ash system and process
20070099398 - Method and system for forming a nitrided germanium-containing layer using plasma processing
20070099435 - Method and system for forming a nitrided germanium-containing layer using plasma processing
April 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070087582 - Gas jet reduction of iso-dense field thickness bias for gapfill process
20070074968 - Icp source for ipvd for uniform plasma in combination high pressure deposition and low pressure etch process
20070077682 - Method and apparatus for a metallic dry-filling process
20070077683 - Method and apparatus for a metallic dry-filling process
February 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070037412 - In-situ atomic layer deposition
20070029193 - Segmented biased peripheral electrode in plasma processing method and apparatus
20070032079 - Method for thin film deposition using multi-tray film precursor evaporation system
January 2007 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20070012337 - In-line metrology for supercritical fluid processing
November 2006 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20060266287 - Method and system for passivating a processing chamber
20060254519 - Locally-efficient inductive plasma coupling for plasma processing system
20060254615 - Treatment of substrate using functionalizing agent in supercritical carbon dioxide
20060255012 - Removal of particles from substrate surfaces using supercritical processing
October 2006 - Wood, Herron & Evans, LLP (tokyo Electron) patents
20060241891 - Wafer curvature estimation, monitoring, and compensation
20060228494 - Method and system for depositing a layer from light-induced vaporization of a solid precursor
20060219160 - Method and system for forming a variable thickness seed layer
20060219168 - Solid precursor vaporization system for use in chemical vapor deposition
20060219177 - Method and system for depositing material on a substrate using a solid precursor
20060220248 - Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
20060222768 - Method and system for precursor delivery
20060222769 - Method for saturating a carrier gas with precursor vapor
20060223310 - Method for forming a barrier/seed layer for copper metallization
20060224008 - Method and system for refurbishing a metal carbonyl precursor
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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Wood, Herron & Evans, LLP (tokyo Electron) in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Wood, Herron & Evans, LLP (tokyo Electron) with additional patents listed. Browse our Agent directory for other possible listings.
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