Wafer encapsulated microelectromechanical structure and method of manufacturing same -> Monitor Keywords

Site News |

Monitor Keywords |

Monitor Archive |

Organizer |

Account Info |

07/26/07 - USPTO Class 257 | 58 views | #20070170529 | Prev - Next | About this Page

Wafer encapsulated microelectromechanical structure and method of manufacturing same

Title: Wafer encapsulated microelectromechanical structure and method of manufacturing same

Brief Patent Description - Full Patent Description - Patent Claims

The Patent Description & Claims data below is from USPTO Patent Application 20070170529, Wafer encapsulated microelectromechanical structure and method of manufacturing same.

1-30. (canceled)

31. A microelectromechanical device comprising:a first substrate;a chamber;a microelectromechanical structure, wherein the microelectromechanical structure is (i) formed from a portion of the first substrate and (ii) at least partially disposed in the chamber;a second substrate, bonded to the first substrate, wherein a surface of the second substrate forms a wall of the chamber;a trench, disposed in the second substrate; andan isolation region, disposed in or on the first substrate and aligned with the trench.

32. The microelectromechanical device of claim 31 wherein the first substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

33. The microelectromechanical device of claim 32 wherein the second substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

34. The microelectromechanical device of claim 31 wherein the first substrate is a semiconductor on insulator substrate.

35. The microelectromechanical device of claim 31 wherein the second substrate is a semiconductor material having a first conductivity and the trench includes (i) a semiconductor material having a second conductivity or (ii) an insulation material.

36. The microelectromechanical device of claim 31 wherein the second substrate is a semiconductor material having a first conductivity and the isolation region is a semiconductor material having a second conductivity.

37. The microelectromechanical device of claim 36 wherein the trench includes a semiconductor material having the second conductivity.

38. The microelectromechanical device of claim 31 wherein the trench (i) defines, at least in part, a contact area and (ii) includes an insulation material.

39. The microelectromechanical device of claim 31 wherein the isolation region includes an insulation material.

40. The microelectromechanical device of claim 31 further comprising a contact, wherein a portion of the contact is formed from a portion of the second substrate.

41. The microelectromechanical device of claim 40 wherein the trench is disposed around at least a portion of the portion of the contact.

42. The microelectromechanical device of claim 41 wherein the portion of the contact is a semiconductor material having a first conductivity, the second substrate is a semiconductor material having the first conductivity and the trench includes a semiconductor material having a second conductivity.

43. The microelectromechanical device of claim 41 wherein the portion of the contact is a semiconductor material having a first conductivity, the second substrate is a semiconductor material having the first conductivity and the isolation region is a semiconductor material having a second conductivity.

44. The microelectromechanical device of claim 31 wherein the trench includes (i) a semiconductor material having the second conductivity or (ii) an insulation material.

45. The microelectromechanical device of claim 31 wherein the first substrate includes an insulation layer and wherein the second substrate is bonded to a surface of the insulation layer.

46. The microelectromechanical device of claim 45 wherein the insulation layer includes a cavity formed therein and wherein the cavity forms a portion of the chamber.

47. A microelectromechanical device comprising:a first substrate;a second substrate, wherein the second substrate is bonded to the first substrate;a chamber;a microelectromechanical structure, wherein the microelectromechanical structure is (i) formed from a portion of the second substrate and (ii) at least partially disposed in the chamber;a third substrate, bonded to the second substrate, wherein a surface of the third substrate forms a wall of the chamber;a trench, disposed in the third substrate; andan isolation region, disposed in or on the second substrate and aligned with the trench.

48. The microelectromechanical device of claim 47 wherein the second substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

49. The microelectromechanical device of claim 47 wherein the third substrate comprises carbon, polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

50. The microelectromechanical device of claim 47 wherein the third substrate is a semiconductor material having a first conductivity and the trench includes a semiconductor material having a second conductivity.

51. The microelectromechanical device of claim 47 wherein the third substrate is a semiconductor material having a first conductivity and the isolation region is a semiconductor material having a second conductivity.

52. The microelectromechanical device of claim 51 wherein the trench includes a semiconductor material having the second conductivity.

53. The microelectromechanical device of claim 47 wherein the trench includes an insulation material.

54. The microelectromechanical device of claim 47 wherein the isolation region includes an insulation material.

55. The microelectromechanical device of claim 47 further comprising a contact, wherein a portion of the contact is formed from a portion of the third substrate.

56. The microelectromechanical device of claim 55 wherein the trench is disposed around at least a portion of the portion of the contact.

57. The microelectromechanical device of claim 55 wherein the portion of the contact is a semiconductor material having a first conductivity, the third substrate is a semiconductor material having the first conductivity and the trench includes a semiconductor material having a second conductivity.

58. The microelectromechanical device of claim 55 wherein the portion of the contact is a semiconductor material having a first conductivity, the third substrate is a semiconductor material having the first conductivity and the isolation region is a semiconductor material having a second conductivity.

59. The microelectromechanical device of claim 47 wherein the trench includes (i) a semiconductor material having the second conductivity or (ii) an insulation material.

60. The microelectromechanical device of claim 47 wherein the first substrate includes an insulation layer and wherein the second substrate is bonded to a surface of the insulation layer.

61. The microelectromechanical device of claim 60 wherein the insulation layer includes a cavity formed therein and wherein the cavity forms a portion of the chamber.

Brief Patent Description - Full Patent Description - Patent Claims

Click on the above for other options relating to this Wafer encapsulated microelectromechanical structure and method of manufacturing same patent application.
###

How KEYWORD MONITOR works... a FREE service from FreshPatents
1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored.
3. Each week you receive an email with patent applications related to your keywords.
Start now! - Receive info on patent apps like Wafer encapsulated microelectromechanical structure and method of manufacturing same or other areas of interest.
###

Previous Patent Application:
Structure for reducing overlap capacitance in field effect transistors
Next Patent Application:
Wafer encapsulated microelectromechanical structure and method of manufacturing same
Industry Class:
Active solid-state devices (e.g., transistors, solid-state diodes)

###

Design/code © 2009 FreshContext LLC/Freshpatents.com. Website Terms and Conditions - Also read: About this Page
Patent data source: patents published by the United States Patent and Trademark Office (USPTO)
Information published here is for research/educational purposes only (and in conjunction with our Keyword Monitor) and is not meant to be used in place of the full USPTO patent document/images or a comprehensive patent archive search. Complete official applications are on file at the USPTO and often contain additional data/images (Freshpatents is currently text-only). FreshPatents.com is not affiliated with or endorsed by the USPTO or firms/individuals or products/designs/ideas related to listed patents.

FreshPatents.com Support
Thank you for viewing the Wafer encapsulated microelectromechanical structure and method of manufacturing same patent info.
IP-related news and info

Results in 0.43793 seconds

Other interesting Feshpatents.com categories:
Accenture , Agouron Pharmaceuticals , Amgen , AT&T , Bausch & Lomb , Callaway Golf 174

* Protect your Inventions
* US Patent Office filing

Provisional Patent
Utility Patent

PATENT INFO