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07/26/07 - USPTO Class 257 | 1 views | #20070170440 | Prev - Next | About this Page

Wafer encapsulated microelectromechanical structure and method of manufacturing same

Title: Wafer encapsulated microelectromechanical structure and method of manufacturing same

Brief Patent Description - Full Patent Description - Patent Claims

The Patent Description & Claims data below is from USPTO Patent Application 20070170440, Wafer encapsulated microelectromechanical structure and method of manufacturing same.

1. A microelectromechanical device comprising:a first substrate;a chamber;a microelectromechanical structure, wherein the microelectromechanical structure is (i) formed from a portion of the first substrate and (ii) at least partially disposed in the chamber;a second substrate, bonded to the first substrate, wherein a surface of the second substrate forms a wall of the chamber; anda contact, wherein:a first portion of the contact is (i) formed from a portion of the first substrate and (ii) at least a portion thereof is disposed outside the chamber; anda second portion of the contact is formed from a portion of the second substrate.

2. The microelectromechanical device of claim 1 wherein the second substrate includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

3. The microelectromechanical device of claim 2 wherein the first substrate includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

4. The microelectromechanical device of claim 2 wherein:the first portion of the contact is a semiconductor material having a first conductivity;the second substrate is a semiconductor material having a second conductivity; andthe second portion of the contact is a semiconductor material having the first conductivity.

5. The microelectromechanical device of claim 4 wherein the second portion of the contact is a polycrystalline or monocrystalline silicon that is counterdoped to include the first conductivity.

6. The microelectromechanical device of claim 1 further including a trench, disposed in the second substrate and around at least a portion of the second portion of the contact.

7. The microelectromechanical device of claim 6 wherein the trench includes a first material disposed therein to electrically isolate the second portion of the contact from the second substrate.

8. The microelectromechanical device of claim 6 wherein the first material is an insulation material.

9. The microelectromechanical device of claim 1 wherein the first substrate is an semiconductor on insulator substrate.

10. The microelectromechanical device of claim 1 wherein the first and second substrates are bonded using fusion bonding, anodic-like bonding, silicon direct bonding, soldering, thermo compression, thermo-sonic, laser bonding and/or glass reflow.

11. A microelectromechanical device comprising:a first substrate;a second substrate, wherein the second substrate is bonded to the first substrate;a chamber;a microelectromechanical structure, wherein the microelectromechanical structure is (i) formed from a portion of the second substrate and (ii) at least partially disposed in the chamber;a third substrate, bonded to the second substrate, wherein a surface of the third substrate forms a wall of the chamber; anda contact, wherein:a first portion of the contact is (i) formed from a portion of the second substrate and (ii) at least a portion thereof is disposed outside the chamber; anda second portion of the contact is formed from a portion of the third substrate.

12. The microelectromechanical device of claim 11 wherein the second substrate includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

13. The microelectromechanical device of claim 12 wherein the third substrate includes polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, or gallium arsenide.

14. The microelectromechanical device of claim 12 wherein:the first portion of the contact is a semiconductor material having a first conductivity;the third substrate is a semiconductor material having a second conductivity; andthe second portion of the contact is a semiconductor material having the first conductivity.

15. The microelectromechanical device of claim 14 wherein the second portion of the contact is a polycrystalline or monocrystalline silicon that is counterdoped to include the first conductivity.

16. The microelectromechanical device of claim 17 further including a trench, disposed in the third substrate and around at least a portion of the second portion of the contact.

17. The microelectromechanical device of claim 16 wherein the trench includes a first material disposed therein to electrically isolate the second portion of the contact from the third substrate.

18. The microelectromechanical device of claim 16 wherein the first material is an insulator material.

19. The microelectromechanical device of claim 16 further including an isolation region disposed in the second substrate such that the trench is aligned with and juxtaposed to the isolation region.

20. The microelectromechanical device of claim 19 wherein:the first portion of the contact is a semiconductor material having a first conductivity;the isolation region is a semiconductor material having a second conductivity; andthe second portion of the contact is a semiconductor material having the first conductivity.

21. The microelectromechanical device of claim 20 wherein the trench includes a first material disposed therein to electrically isolate the second portion of the contact from the second substrate.

22. The microelectromechanical device of claim 16 wherein the first material is a semiconductor material having the second conductivity.

23. The microelectromechanical device of claim 11 further including an isolation region, disposed in the first substrate such that the first portion of the contact is aligned with and juxtaposed to the isolation region.

24. The microelectromechanical device of claim 11 further including:a first isolation region, disposed in the first substrate such that the first portion of the contact is aligned with and juxtaposed to the first isolation region; anda second isolation region, disposed in the second substrate such that the second portion of the contact is aligned with and juxtaposed to the second isolation region.

25. The microelectromechanical device of claim 24 wherein:the first and second portions of the contact are semiconductor materials having a first conductivity; andthe first and second isolation regions are semiconductor materials having the second conductivity.

26. The microelectromechanical device of claim 25 further including a trench, disposed in the third substrate and around at least a portion of the second portion of the contact.

27. The microelectromechanical device of claim 26 wherein the trench includes a first material disposed therein to electrically isolate the second portion of the contact from the third substrate.

28. The microelectromechanical device of claim 27 wherein the trench is aligned with and juxtaposed to the second isolation region.

29. The microelectromechanical device of claim 28 wherein the first material is an insulator material.

30. The microelectromechanical device of claim 11 wherein the second and third substrates are bonded using fusion bonding, anodic-like bonding, silicon direct bonding, soldering, thermo compression, thermo-sonic, laser bonding and/or glass reflow.

Brief Patent Description - Full Patent Description - Patent Claims

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Industry Class:
Active solid-state devices (e.g., transistors, solid-state diodes)

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