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07/26/07 - USPTO Class 257 | 1 views | #20070170438 | Prev - Next | About this Page

Wafer encapsulated microelectromechanical structure and method of manufacturing same

Title: Wafer encapsulated microelectromechanical structure and method of manufacturing same

Brief Patent Description - Full Patent Description - Patent Claims

The Patent Description & Claims data below is from USPTO Patent Application 20070170438, Wafer encapsulated microelectromechanical structure and method of manufacturing same.

1-30. (canceled)

31. A system comprising:a first substrate;a chamber;a microelectromechanical structure, wherein the microelectromechanical structure is (i) formed from a portion of the first substrate and (ii) at least partially disposed in the chamber;a second substrate, bonded to the first substrate, wherein a surface of the second substrate forms a wall of the chamber;circuitry disposed in or on the second substrate; anda contact, wherein:a first portion of the contact is (i) formed from a portion of the first substrate and (ii) at least a portion thereof is disposed outside the chamber; anda second portion of the contact is formed from a portion of the second substrate.

32. The system of claim 31 wherein:the first substrate includes carbon, polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, and/or gallium arsenide; andthe second substrate includes carbon, polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, and/or gallium arsenide.

33. The system of claim 32 wherein:the first portion of the contact is a semiconductor material having a first conductivity;the second substrate is a semiconductor material having a second conductivity; andthe second portion of the contact is a semiconductor material having the first conductivity.

34. The system of claim 33 wherein the second portion of the contact is a semiconductor material that is counterdoped to include the first conductivity.

35. The system of claim 31 further including a trench disposed in the second substrate and around at least a portion of the second portion of the contact.

36. The system of claim 35 wherein the trench includes an insulation material disposed therein to electrically isolate the second portion of the contact from the second substrate.

37. The system of claim 31 wherein the first substrate is a semiconductor on insulator substrate.

38. The system of claim 31 wherein the first and second substrates are bonded using fusion bonding, anodic-like bonding, silicon direct bonding, soldering, thermo compression, thermo-sonic, laser bonding and/or glass reflow.

39. The system of claim 31 wherein the contact is electrically coupled to the circuitry.

40. The system of claim 39 wherein the circuitry generates clock signals from an output signal of the microelectromechanical structure.

41. The system of claim 40 wherein the circuitry adjusts, compensates, corrects and/or controls the frequency and/or phase compensation of the output signal of the microelectromechanical structure.

42. The system of claim 41 wherein the circuitry includes one or more phase locked loops, delay locked loops, digital synthesizer, frequency synthesizer, fractional synthesizer, numerically controlled oscillator, and/or frequency locked loops.

43. The system of claim 31 wherein the microelectromechanical device is a portion of an accelerometer, gyroscope, transducer, filter and/or resonator.

44. The system of claim 31 wherein the microelectromechanical structure includes more than one mechanical structure.

45. The system of claim 44 wherein at least one of the mechanical structures is a filter, resonator, accelerometer, gyroscope, pressure sensor, strain sensor, tactile sensor, magnetic sensor or temperature sensor.

46. A system comprising:a first substrate;a second substrate, wherein the second substrate is bonded to the first substrate;a chamber;a microelectromechanical structure, wherein the microelectromechanical structure is (i) formed from a portion of the second substrate and (ii) at least partially disposed in the chamber;a third substrate, bonded to the second substrate, wherein a surface of the third substrate forms a wall of the chamber; andcircuitry disposed in or on the third substrate.

47. The system of claim 46 wherein:the first substrate includes carbon, polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, and/or gallium arsenide; andthe second substrate includes carbon, polycrystalline silicon, porous polycrystalline silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium, and/or gallium arsenide.

48. The system of claim 46 further including a contact having:a first portion of the contact (i) formed from a portion of the second substrate and (ii) at least a portion thereof being disposed outside the chamber; anda second portion of the contact formed from a portion of the third substrate;wherein:the first portion of the contact is a semiconductor material having a first conductivity;the third substrate is a semiconductor material having a second conductivity; andthe second portion of the contact is a semiconductor material having the first conductivity.

49. The system of claim 48 wherein the second portion of the contact is a polycrystalline or monocrystalline silicon that is counterdoped to include the first conductivity.

50. The system of claim 46 further including:a contact having:a first portion of the contact (i) formed from a portion of the second substrate and (ii) at least a portion thereof being disposed outside the chamber; anda second portion of the contact formed from a portion of the third substrate; anda trench disposed in the third substrate and around at least a portion of the second portion of the contact.

51. The system of claim 50 wherein the trench includes an insulation material disposed therein to electrically isolate the second portion of the contact from the third substrate.

52. The system of claim 50 further including an isolation region disposed in the second substrate such that the trench is aligned with and juxtaposed to the isolation region.

53. The system of claim 52 wherein:the first portion of the contact is a semiconductor material having a first conductivity;the isolation region is a semiconductor material having a second conductivity; andthe second portion of the contact is a semiconductor material having the first conductivity.

54. The system of claim 46 further including:a contact having:a first portion of the contact (i) formed from a portion of the second substrate and (ii) at least a portion thereof being disposed outside the chamber; anda second portion of the contact formed from a portion of the third substrate; andan isolation region, disposed in the first substrate such that a first portion of the contact is aligned with and juxtaposed to the isolation region.

55. The system of claim 46 further including:a contact having:a first portion of the contact (i) formed from a portion of the second substrate and (ii) at least a portion thereof being disposed outside the chamber; anda second portion of the contact formed from a portion of the third substrate;a first isolation region, disposed in the first substrate such that the first portion of the contact is aligned with and juxtaposed to the first isolation region; anda second isolation region, disposed in the second substrate such that the second portion of the contact is aligned with and juxtaposed to the second isolation region.

56. The system of claim 55 wherein:the first and second portions of the contact are semiconductor materials having a first conductivity; andthe first and second isolation regions are semiconductor materials having the second conductivity.

57. The system of claim 56 further including a trench, disposed in the third substrate and around at least a portion of the second portion of the contact.

58. The system of claim 57 wherein the trench includes an insulation material disposed therein to electrically isolate the second portion of the contact from the third substrate.

59. The system of claim 58 wherein the trench is aligned with and juxtaposed to the second isolation region.

60. The system of claim 46 wherein the second and third substrates are bonded using fusion bonding, anodic-like bonding, silicon direct bonding, soldering, thermo compression, thermo-sonic, laser bonding and/or glass reflow.

61. The system of claim 46 wherein the contact is electrically coupled to the circuitry.

62. The system of claim 61 wherein the circuitry generates clock signals from an output signal of the microelectromechanical structure.

63. The system of claim 62 wherein the circuitry adjusts, compensates, corrects and/or controls the frequency and/or phase compensation of the output signal of the microelectromechanical structure.

64. The system of claim 63 wherein the circuitry includes one or more phase locked loops, delay locked loops, digital synthesizer, frequency synthesizer, fractional synthesizer, numerically controlled oscillator, and/or frequency locked loops.

65. The system of claim 61 wherein the microelectromechanical device is a portion of an accelerometer, gyroscope, transducer, filter and/or resonator.

66. The system of claim 46 wherein the microelectromechanical structure includes more than one mechanical structure.

67. The system of claim 66 wherein at least one of the mechanical structures is a filter, resonator, accelerometer, gyroscope, pressure sensor, strain sensor, tactile sensor, magnetic sensor or temperature sensor.

Brief Patent Description - Full Patent Description - Patent Claims

Click on the above for other options relating to this Wafer encapsulated microelectromechanical structure and method of manufacturing same patent application.

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