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Thin film transistor substrate, method of manufacturing the same and display apparatus having the sameRelated Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Field Effect Device, Having Insulated Electrode (e.g., Mosfet, Mos Diode), Insulated Gate Capacitor Or Insulated Gate Transistor Combined With Capacitor (e.g., Dynamic Memory Cell), Stacked CapacitorThin film transistor substrate, method of manufacturing the same and display apparatus having the same description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070187741, Thin film transistor substrate, method of manufacturing the same and display apparatus having the same. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] This application claims priority to Korean Patent Application No. 2005-33519, filed on Apr. 22, 2005 and all the benefits accruing therefrom under 35 U.S.C. .sctn.119, and the contents of which in its entirety are herein incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a thin film transistor ("TFT") substrate, a method of manufacturing the TFT substrate, and a display apparatus having the TFT substrate. More particularly, the present invention relates to a TFT substrate capable of preventing a variation of a storage capacitance, a method of manufacturing the TFT substrate, and a display apparatus having the TFT substrate. [0004] 2. Description of the Related Art [0005] In general, a TFT substrate is used for a circuit substrate to individually drive a plurality of pixels in a display apparatus such as a liquid crystal display ("LCD") apparatus, an organic electro luminescence apparatus, and so on. [0006] A voltage is charged in the pixels of the TFT substrate during a predetermined time, and the voltage charged in the pixels is held by a storage capacitor during one frame. [0007] A structure of the TFT substrate is classified into an organic layer structure and a non-organic layer structure. The TFT of an organic layer structure employs an organic layer to planarize a surface of the TFT substrate, whereas the TFT of a non-organic layer structure lacks the organic layer of the organic layer structure. In the TFT substrate of the non-organic layer structure, the storage capacitor is defined by a gate line, a pixel electrode, a gate insulating layer, and an inorganic layer. The gate insulating layer and the inorganic layer are disposed between the gate line and the pixel electrode. However, the TFT substrate of the organic layer structure further includes the organic layer disposed on the inorganic layer. In the TFT substrate of the organic layer structure, a capacitance for the storage capacitor decreases because the organic layer acts as a dielectric substance. However, when an overlapped area between the gate line and the pixel electrode increases in order to increase the capacitance for the storage capacitor, an opening ratio of the TFT substrate decreases. Thus, the storage capacitor defined by the gate line, a data line, and the gate insulating layer has been developed for the TFT substrate of the organic layer structure. [0008] In general, the TFT substrate is manufactured via a five-mask process or a four-mask process. However, in the TFT substrate manufactured via the four-mask process where the data line and an active layer are simultaneously patterned, the active layer remains under the data line. The storage capacitor is, therefore, formed in a metal oxide semiconductor ("MOS") structure in the four-mask process. [0009] However, a capacitor of the storage capacitor having the MOS structure periodically varies according to a polarity of a voltage applied to the storage capacitor. As a result, a display defect such as a flicker or an afterimage occurs on a screen of the LCD apparatus. BRIEF SUMMARY OF THE INVENTION [0010] The present invention provides a thin film transistor ("TFT") substrate capable of preventing a capacitance variation of a storage capacitor having a metal oxide semiconductor ("MOS") structure so as to improve display quality. [0011] The present invention also provides a method of manufacturing the above-mentioned TFT substrate. [0012] The present invention also provides a display apparatus having the above-mentioned TFT substrate. [0013] In an exemplary embodiment of the present invention, a TFT substrate includes an insulating substrate, a gate member, a storage member, a gate insulating layer, an active layer, a data member, a passivation layer, and a pixel electrode. The gate member is formed on the insulating substrate and has a gate line and a gate electrode electrically connected to the gate line. The storage member is also formed on the insulating substrate and has a storage line, a first storage electrode, and a second storage electrode. The gate insulating layer covers the gate member and the storage member. The active layer is formed on the insulating layer and is overlapped with the gate electrode, the first storage electrode, and the second storage electrode. The data member is formed on the active layer and has a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode, and a fourth storage electrode overlapped with the second storage electrode. The passivation layer covers the data member, and the pixel electrode is formed on the passivation layer. [0014] In an exemplary embodiment of a method of manufacturing a thin film transistor substrate according to the present invention, a gate member having a gate line and a gate electrode electrically connected to the gate line is formed on an insulating substrate. A storage member having a storage line, a first storage electrode, and a second storage electrode is also formed on the insulating substrate. A gate insulating layer is then formed on the insulating substrate so that the gate insulating layer covers the gate member and the storage member. An active layer is formed on the gate insulating layer so that the active layer is overlapped with the gate electrode, the first storage electrode, and the second storage electrode. A data member is formed on the active layer. The data member has a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode, and a fourth storage electrode overlapped with the second storage electrode. A passivation layer is formed on the gate insulating layer so that the passivation layer covers the active layer and the data member. A pixel electrode is formed on the passivation layer. [0015] In still another exemplary embodiment of the present invention, a display apparatus includes a thin film transistor substrate, an opposite substrate having a common electrode formed on a surface opposite to the thin film transistor substrate, and a liquid crystal layer disposed between the thin film transistor substrate and the opposite substrate. The thin film transistor substrate includes an insulating substrate, a gate member, a storage member, a gate insulating layer, an active layer, a data member, a passivation layer, and a pixel electrode. The gate member is formed on the insulating substrate and has a gate line and a gate electrode electrically connected to the gate line. The storage member is formed on the insulating substrate and has a storage line, a first storage electrode, and a second storage electrode. The gate insulating layer covers the gate member and the storage member. The active layer is formed on the insulating layer and overlaps the gate electrode, the first storage electrode, and the second storage electrode. The data member is formed on the active layer and has a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode, and a fourth storage electrode overlapped with the second storage electrode. The passivation layer covers the data member, and the pixel electrode is formed on the passivation layer. [0016] In yet another exemplary embodiment of the present invention, a thin film transistor substrate includes a first storage capacitor and a second storage capacitor wherein voltages having different polarities from each other are applied to the first storage capacitor and the second storage capacitor, respectively, and wherein a capacitance variation of the first storage capacitor is compensated by a capacitance variation of the second storage capacitor and a total capacitance of the first and second storage capacitors is maintained. [0017] According to the above, a capacitance variation of a storage capacitor may be prevented, thereby improving display quality of the display apparatus. BRIEF DESCRIPTION OF THE DRAWINGS [0018] The above and other advantages of the present invention will become readily apparent by reference to the following detailed description when considered in conjunction with the accompanying drawings wherein: [0019] FIG. 1 is a plan view showing an exemplary embodiment of a TFT substrate according to the present invention; [0020] FIG. 2 is a cross-sectional view taken along line I-I' in FIG. 1; [0021] FIG. 3 is an equivalent circuit diagram of the TFT substrate in FIG. 1; Continue reading about Thin film transistor substrate, method of manufacturing the same and display apparatus having the same... 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