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  Thin film transistor substrate and method for forming metal wire thereofUSPTO Application #: 20070187690Title: Thin film transistor substrate and method for forming metal wire thereof Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability. (end of abstract)
Agent: Macpherson Kwok Chen & Heid LLP - San Jose, CA, US Inventors: Jae-Gab Lee, Chang-Oh Jeong, Myung-Mo Sung, Hee-Jung Yang, Beom-Seok Cho USPTO Applicaton #: 20070187690 - Class: 257072000 (USPTO) Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Non-single Crystal, Or Recrystallized, Semiconductor Material Forms Part Of Active Junction (including Field-induced Active Junction), Field Effect Device In Non-single Crystal, Or Recrystallized, Semiconductor Material, In Array Having Structure For Use As Imager Or Display, Or With Transparent Electrode The Patent Description & Claims data below is from USPTO Patent Application 20070187690. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] (a) Field of the Invention [0002] The present invention relates to a thin film transistor substrate and a metal wiring method thereof, and more particularly to a thin film transistor substrate having superior adhesion ability and diffusion resistance and a metal wiring method thereof. [0003] (b) Description of the Related Art [0004] A thin film transistor (TFT) is one of the devices widely used as switching devices of TFT liquid crystal displays. [0005] A thin film transistor substrate comprises a scanning signal wiring or gate wiring that transfers scanning signals, a picture signal wiring or data wiring that transfers picture signals, a thin film transistor that connects the gate wiring and the data wiring, a pixel electrode connected to the thin film transistor, a gate insulation film that covers the gate wiring, and a passivation film that protects the thin film transistor and the data wiring. A thin film transistor comprises a semiconductor layer that forms a gate electrode and channels, a source electrode, a drain electrode, a gate insulation film and a passivation layer. A thin film transistor is a switching device that transfers or interrupts picture signals transferred through the data wiring depending on scanning signals transferred by the gate wiring. [0006] In TFT LCDs using the thin film transistor as a switching device, an electric field is applied to the liquid crystal using optical anisotropy and polarization of the liquid crystal. The electric field controls arrangement orientation of the liquid crystal molecules to offer images. [0007] In the active matrix liquid crystal display (AMLCD), which is being actively researched and developed, the pixel electrodes connected with the thin film transistor are arranged in matrix form, so that it can offer large screen size and high resolution, such as SXGA or UXGA. [0008] In order to make such large-area and high-resolution liquid crystal displays as SXGA or UXGA, resistance of gate wiring, data wiring and other wirings should be low. In particular, if the resistance of the gate wiring is high, the image quality worsens because of cross-talks due to signal delay caused by the wiring resistance. Metals that can be used for the wiring and their characteristics are summarized in the following Table 1. TABLE-US-00001 TABLE 1 Specific resistance Adhesion Heat Metal (.mu..OMEGA. cm) Price ability resistance Cu 2 Low Low High Au 3 High Low High Al 4 Low High Low Mo 20 Moderate High High Cr 50 Moderate High High [0009] As seen in Table 1, aluminum has low heat resistance. While copper is satisfactory in cost and heat resistance, it has poor adhesion ability to the substrate. Therefore, many researches are trying to improve the adhesion ability of copper to the substrate. [0010] In this regard, wirings of copper alloys, such as Cu/Ti/Si, Cu/TiN/Si, Cu/Ta/Si and Cu/TaN/Si, are widely used. However, these copper alloy wirings are manufactured through complicated processes. Also, they have weak adhesion of Si and Cu, and the anti-diffusion films are thick. Moreover, the anti-diffusion films react with Cu during heat treatment. [0011] Recently, the copper-silver alloy wirings are widely used. However, silver has weak adhesion ability to the glass substrate or silicon layers. The weak adhesion ability causes problems like the thin film's coming off from the substrate or breaking of the wiring. Also, silver is easily damaged by dry-type etching agents for etching insulation film consisting of silicon nitride, etc. SUMMARY OF THE INVENTION [0012] The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and metal wiring and a metal wiring method thereof. [0013] The thin film transistor substrate of the present invention has cross-linked self-assembled monolayers between Si surface and metal wiring, thereby offering good adhesion ability and anti-diffusion ability. BRIEF DESCRIPTION OF THE DRAWINGS [0014] FIGS. 1a and 1b show copper or copper alloy wiring structure, wherein an anti-diffusion film is formed between the Si surface and Cu. [0015] FIGS. 2a to 2d show AES (Auger electron spectrometer) depth profiles of copper (Cu) wiring, wherein self-assembled monolayers are formed between the Si surface and Cu or Cu(Ag), before and after heat treatment at 300.degree. C. [0016] FIG. 3 is a graph that shows change in specific resistance of copper or copper alloy on top of the self-assembled monolayers according to the temperature. [0017] FIGS. 4a and 4b show a thin film transistor substrate for a liquid crystal display of the present invention. [0018] FIGS. 5a and 5b are cross-sectional views along the line V-V' of FIGS. 4a and 4b, respectively. [0019] FIGS. 6a, 7a, 8a and 9a show a thin film transistor substrate for a liquid crystal display of the present invention, which is being prepared by a sequential process. [0020] FIG. 6b is a cross-sectional view along the line VIb-VIb' of FIG. 6a. [0021] FIG. 7b is a cross-sectional view along the line VIIb-VIIb' of FIG. 7a and shows the step next to that of FIG. 6b. 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