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  Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel displayUSPTO Application #: 20060138405Title: Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display Abstract: A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region. (end of abstract) Agent: Knobbe Martens Olson & Bear LLP - Irvine, CA, US Inventors: Nam-Choul Yang, Hye-Dong Kim, Min-Chul Suh, Jae-Bon Koo, Sang-Min Lee, Hun-Jung Lee USPTO Applicaton #: 20060138405 - Class: 257040000 (USPTO) Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Organic Semiconductor Material The Patent Description & Claims data below is from USPTO Patent Application 20060138405. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit of Korean Patent Application No. 10-2004-0111097, filed on Dec. 23, 2004, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present embodiments relate to a thin film transistor (TFT), a flat panel display having the TFT and a method for manufacturing the TFT and the flat panel display; and more particularly, to a thin film transistor (TFT) having a transformed region in an organic semiconductor layer that provides the same result as patterning the organic semiconductor layer, a flat panel display having the TFT and a method for manufacturing the TFT and the flat panel display. [0004] 2. Description of the Related Art [0005] A thin film transistor (TFT) has been used in a flat panel display as a switching element for controlling operations of each pixel or as a driving element for operating a pixel. The TFT includes a liquid crystal display element, an organic electroluminescent display element and an inorganic light emitting display element. [0006] The TFT includes an active layer having a source region and a drain region which are doped with a high concentration of impurity and a channel region formed between the source region and the drain region. The TFT also includes a gate electrode formed on a predetermined region of a substrate where the channel region is faced and the gate electrode is insulated from the active layer. The TFT further includes a source electrode coupled to the source region and a drain electrode, each coupled to the drain region. [0007] The flat panel display has become thinner and has been required to have flexibility. [0008] For manufacturing thinner flat panel displays having flexibility, a plastic substrate has been used as a substrate of the flat panel display instead of a glass substrate. When using a plastic substrate, a high temperature thermal process cannot be performed in manufacturing the flat panel display. Accordingly, there are difficulties in using a conventional polysilicon thin film transistor for manufacturing the flat panel display. [0009] To overcome the above problem, an organic semiconductor has been used. The organic semiconductor can be formed in a low temperature thermal process for manufacturing a thin film transistor (TFT) which is relatively inexpensive. [0010] However, a photo lithographing method cannot be used for patterning the organic semiconductor layer. In other words, the pattern is formed on the organic semiconductor forming an active channel. If a combination method of a wet type and a dry type of etching methods is used for forming the pattern on the organic semiconductor, the organic semiconductor is damaged. [0011] Therefore, a new method for patterning the organic semiconductor is needed. SUMMARY OF THE INVENTION [0012] One embodiment relates to a thin film transistor, comprising: [0013] a gate electrode; [0014] a source electrode and a drain electrode, each insulated from the gate electrode; and [0015] an organic semiconductor layer insulated from the gate electrode and coupled to the source electrode and the drain electrode, [0016] wherein the organic semiconductor layer comprises a transformed region around at least a channel region, the transformed region having a crystal structure distinguished from other regions. [0017] In one aspect, the crystal size of the transformed region is smaller than the crystal size of the other regions. [0018] In another aspect, the transformed region has lower current mobility than the other regions. [0019] In yet another aspect, the transformed region is formed by emitting light on a predetermined region where the transformed region is formed. [0020] In still another aspect, the transformed region is formed by performing a thermal process on a predetermined region where the transformed region is formed. [0021] In another aspect, the transformed region comprises a boundary having a closed curve shape surrounding at least the channel region. [0022] In another aspect, the transformed region comprises a boundary formed on at least one pair of substantially parallel lines where at least the channel region is located between the substantially parallel lines. [0023] In another aspect, the transformed region comprises a boundary substantially parallel to a line connecting the source region, the channel region and the drain region. [0024] In another aspect, an insulation layer is formed covering the gate electrode, and the organic semiconductor layer is formed on the insulation layer. [0025] Another embodiment relates to an insulation layer covering the gate electrode; wherein, the source electrode and drain electrode are each formed on the insulation layer; [0026] a passivation layer covering the insulation layer, the source electrode and the drain electrode; wherein, the passivation layer has an opening over the source electrode or the drain electrode, wherein the organic semiconductor layer is formed on the passivation layer. Continue reading... Full patent description for Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. 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