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09/27/07 - USPTO Class 428 |  114 views | #20070224399 | Prev - Next | About this Page  428 rss/xml feed  monitor keywords

Thick porous anodic alumina films and nanowire arrays grown on a solid substrate

USPTO Application #: 20070224399
Title: Thick porous anodic alumina films and nanowire arrays grown on a solid substrate
Abstract: The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method (end of abstract)



Agent: Daly, Crowley, Mofford & Durkee, LLP - Canton, MA, US
Inventors: Oded Rabin, Paul R. Herz, Mildred S. Dresselhaus, Akintunde I. Akinwande, Yu-Ming Lin
USPTO Applicaton #: 20070224399 - Class: 428209000 (USPTO)

Related Patent Categories: Stock Material Or Miscellaneous Articles, Structurally Defined Web Or Sheet (e.g., Overall Dimension, Etc.), Discontinuous Or Differential Coating, Impregnation Or Bond (e.g., Artwork, Printing, Retouched Photograph, Etc.), Including Metal Layer

Thick porous anodic alumina films and nanowire arrays grown on a solid substrate description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20070224399, Thick porous anodic alumina films and nanowire arrays grown on a solid substrate.

Brief Patent Description - Full Patent Description - Patent Application Claims
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[0001] This application claims priority under 35 U.S.C. .sctn.119(e) to provisional patent application Ser. No. 60/333,403 filed Nov. 26, 2001; the disclosure of which is incorporated by reference herein.

FIELD OF THE INVENTION

[0003] The present invention relates generally to porous anodic alumina films and more specifically to a method and apparatus incorporating porous anodic alumina films as a template for the fabrication of nanostructured devices.

BACKGROUND OF THE INVENTION

[0004] Porous anodic alumina (PAA) films are films generated by electrochemical oxidation of aluminum under selective conditions (electrolyte, temperature and voltage). These films have a unique morphology of a honeycomb array of channels, several nanometers in diameter and several microns in length, which are perpendicular to the surface of the film. At the alumina-aluminum interface however there is a non-porous undulated alumina barrier layer several nanometers thick. Since the pore size, the pore length, the inter-pore distance, and the barrier layer thickness can all be controlled by the anodization conditions, PAA films have attracted a lot of interest as a nanotechnology tool. PAA films have found applications as filters, collimators, as templates for nano-patterning and nanowire growth, and as photonic bandgap materials

[0005] PAA films have several disadvantages associated with them. These disadvantages have precluded the use of PAA films in a wider range of applications. Free-standing anodic films are extremely fragile and cannot sustain stress. Even when the film is attached to the aluminum substrate, the film may fracture since aluminum is a soft metal. Such uniform, small-feature and controllable porous structures have being successfully grown only on aluminum, and not on any other substrate. The growing porous film is separated from the underlying metallic aluminum by a scalloped layer of oxide, known as the barrier layer. The barrier layer prevents electrical contact to be established with the bottoms of the pores of the film.

[0006] The conventional way of fabricating the PAA films starts with an aluminum sheet that goes through several steps of mechanical and electrochemical polishing. Once the surface roughness of the sheet is down to the sub-micron level, the metal is anodized in an acidic bath and the porous alumina is obtained. The quality of the starting anodic alumina is usually low in terms of the ordering and uniformity of the pores. Therefore, this initial film is typically etched away and a new PAA film is grown under the same or similar anodization conditions. The pores cannot be provided all the way through the aluminum, since an electrical path through the aluminum is necessary to perform the anodization, and the aluminum substrate functions as an electrode for the anodization process. In order to obtain a PAA membrane in which the pores run completely through the film and are open (and accessible) on both sides, it is necessary to etch away the metallic aluminum sustaining the oxide and subsequently also to etch away the barrier layer, or to detach the membrane from the aluminum substrate by one of the available methods to do so.

[0007] In practice, this process has several disadvantages associated with it. The mechanical polishing steps introduce imperfections and contamination, limit the active area of the film, and limit the throughput of the process. Another disadvantage with the prior art process is that after the removal of the sustaining metal, the free-standing PAA film is very brittle and is hard to manipulate effectively. Further, during the etch steps the surface topography of the film is degraded thereby affecting the optical properties of the film and its use as a mask.

[0008] It would, therefore, be desirable to provide a method which allows for the fabrication of PAA films on a wide variety of substrates. When a rigid substrate is used, the resulting anodic film is more tractable, easily grown on extensive areas in a uniform manner, and can be manipulated without danger of fracturing. It would be further desirable to provide the film on patterned and non-planar surfaces. It would still further be desirable to provide the PAA film missing the barrier layer (partially or completely) such that the bottom of the pores can be readily accessed electrically such as by a conducting layer on the substrate. Having such a film, an array of nanowires perpendicular to the surface of the film can be deposited into the pores.

[0009] It would be further desirable to provide the PAA film on a patterned conducting layer such that the resulting anodic film can be provided with one set of pores filled with one type of nanowire material (e g n-type material) and another set of pores provided with a different nanowire material (e.g. p-type). It would be further desirable to provide the PAA film missing the barrier layer on a patterned conducting layer such that pores, or nanowires within the pores, can be electrically addressed independently from each other. It would further be desirable to provide the PAA templates such that multiple stages of the templates can be built, and can be stacked to form a multi-stage device.

SUMMARY OF THE INVENTION

[0010] The present new technology described herein allows for the fabrication of PAA films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An alumina template is formed on the substrate. When a rigid substrate such as a conventional silicon wafer is used, the resulting anodic film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are prepared by filling the pores of the template by a different material. The nanowires may be formed from various materials within the same template. Arrays of nanowires may be stacked on top of each other into a multi-stage architecture.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The invention will be more fully understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0012] FIG. 1 is a schematic illustration of the presently disclosed process for fabricating a PAA film, FIG. 2A is a SEM micrograph of a top surface of a PAA film formed by the presently disclosed method;

[0013] FIG. 2B is a SEM micrograph of a bottom surface of the PAA film of FIG. 2A;

[0014] FIG. 2C is an AFM micrograph of a top surface of a PAA film of FIG. 2A;

[0015] FIG. 2D is an AFM micrograph of a bottom surface of a PAA film of FIG. 2A;

[0016] FIG. 3 is a SEM image showing the presence of nanowires within the template;

[0017] FIG. 4 is a cross-sectional view of a PAA template filled with nanowires;

[0018] FIG. 5 is a cross-sectional view of the interface between the barrier layer and a silicon oxide adhesion layer;

[0019] FIG. 6 is an image of nanowires attached to a substrate after the removal of the template;

[0020] FIG. 7A is a side view SEM image of a PAA film grown in a trench between two pieces of other material;

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