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Tandem photovoltaic cells

USPTO Application #: 20070181179
Title: Tandem photovoltaic cells
Abstract: Tandem photovoltaic cells having a recombination layer, as well as related systems, methods, and components, are disclosed. (end of abstract)
Agent: Fish & Richardson PC - Minneapolis, MN, US
Inventors: Christoph Brabec, Russell Gaudiana, Christoph Waldauf
USPTO Applicaton #: 20070181179 - Class: 136263000 (USPTO)
Related Patent Categories: Batteries: Thermoelectric And Photoelectric, Photoelectric, Cells, Organic Active Material Containing
The Patent Description & Claims data below is from USPTO Patent Application 20070181179.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] Pursuant to 35 U.S.C. .sctn. 119(e), this application claims priority to U.S. Provisional Application Ser. No. 60/752,608, filed Dec. 21, 2005, U.S. Provisional Application Ser. No. 60/790,606, filed Apr. 11, 2006, U.S. Provisional Application Ser. No. 60/792,485, filed Apr. 17, 2006, U.S. Provisional Application Ser. No. 60/792,635, filed Apr. 17, 2006, U.S. Provisional Application Ser. No. 60/793,442, filed Apr. 20, 2006, U.S. Provisional Application Ser. No. 60/795,103, filed Apr. 26, 2006, U.S. Provisional Application Ser. No. 60/797,881, filed May 5, 2006, and U.S. Provisional Application Ser. No. 60/798,258, filed May 5, 2006, the contents of which are hereby incorporated by reference.

TECHNICAL FIELD

[0002] The invention relates to tandem photovoltaic cells having a recombination layer, as well as related systems, methods, and components.

BACKGROUND

[0003] Photovoltaic cells are commonly used to transfer energy in the form of light into energy in the form of electricity. A typical photovoltaic cell includes a photoactive material disposed between two electrodes. Generally, light passes through one or both of the electrodes to interact with the photoactive material to generate electricity. As a result, the ability of one or both of the electrodes to transmit light (e.g., light at one or more wavelengths absorbed by a photoactive material) can limit the overall efficiency of a photovoltaic cell. In many photovoltaic cells, a film of semiconductive material (e.g., indium tin oxide) is used to form the electrode(s) through which light passes because, although the semiconductive material may have a lower electrical conductivity than electrically conductive materials, the semiconductive material can transmit more light than many electrically conductive materials.

[0004] There is an increasing interest in the development of photovoltaic technology due primarily to a desire to reduce consumption of and dependency on fossil fuel-based energy sources. Photovoltaic technology is also viewed by many as being an environmentally friendly energy technology. However, for photovoltaic technology to be a commercially feasible energy technology, the material and manufacturing costs of a photovoltaic system (a system that uses one or more photovoltaic cells to convert light to electrical energy) should be recoverable over some reasonable time frame. But, in some instances the costs (e.g., due to materials and/or manufacture) associated with practically designed photovoltaic systems have restricted their availability and use.

SUMMARY

[0005] The invention relates to tandem photovoltaic cells having a recombination layer, as well as related systems, methods, and components.

[0006] In one aspect, this invention features a system that includes first and second electrodes, a recombination layer between the first and second electrodes, a first photoactive layer between the first electrode and the recombination layer, and a second photoactive layer between the second electrode and the recombination layer. The recombination layer includes a semiconductor material. The system is configured as a photovoltaic system.

[0007] In another aspect, this invention features a system that include first and second electrodes, first and second photoactive layers between the first and second electrodes, and a third layer between the first and second photoactive layers. The first photoactive layer includes a first semiconductor material and the second photoactive layer includes a second semiconductor material. The third layer includes a third semiconductor material different from the first or second semiconductor material. The system is configured as a photovoltaic system.

[0008] In another aspect, this invention features a system that includes first and second electrodes, first and second photoactive layers between the first and second electrodes, a third layer including an n-type semiconductor material, and a fourth layer include an p-type semiconductor material. The first photoactive layer is between the first electrode and the third layer, which is between the first and second photoactive layers. The second photoactive layer is between the second electrode and the fourth layer, which is between the second photoactive layer and the third layer. The system is configured as a photovoltaic system.

[0009] In another aspect, this invention features a system that includes first and second electrodes, a recombination layer between the first and second electrodes, a first photoactive layer between the first electrode and the recombination layer, and a second photoactive layer between the second electrode and the recombination layer. At least one of the first and second electrodes includes a mesh electrode. The recombination layer includes a semiconductor material. The system is configured as a photovoltaic system.

[0010] In still another aspect, this invention features a method that includes preparing a photovoltaic system having a recombination layer by a roll-to-roll process. Embodiments can include one or more of the following features. In some embodiments, the semiconductor material in the recombination layer includes a p-type semiconductor material and an n-type semiconductor material.

[0011] In some embodiments, the p-type semiconductor material includes a polymer selected from the group consisting of polythiophenes (e.g., poly(3,4-ethylene dioxythiophene) (PEDOT)), polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, polycyclopentadithiophenes, polysilacyclopentadithiophenes, polycyclopentadithiazoles, polythiazolothiazoles, polythiazoles, polybenzothiadiazoles, poly(thiophene oxide)s, poly(cyclopentadithiophene oxide)s, polythiadiazoloquinoxalines, polybenzoisothiazoles, polybenzothiazoles, polythienothiophenes, poly(thienothiophene oxide)s, polydithienothiophenes, poly(dithienothiophene oxide)s, polytetrahydroisoindoles, and copolymers thereof.

[0012] In some embodiments, the p-type semiconductor material includes a metal oxide. For example, the metal oxide can include an oxide selected from the group consisting of copper oxides, strontium copper oxides, and strontium titanium oxides. In certain embodiments, the p-type semiconductor material includes a p-doped metal oxide (e.g., p-doped zinc oxides or p-doped titanium oxides).

[0013] In some embodiments, the n-type semiconductor material includes a metal oxide. For example, the metal oxide can include an oxide selected from the group consisting of titanium oxides, zinc oxides, tungsten oxides, molybdenum oxides, and combinations thereof. In other embodiments, the n-type semiconductor material includes a material selected from the group consisting of fullerenes, inorganic nanoparticles, oxadiazoles, discotic liquid crystals, carbon nanorods, inorganic nanorods, polymers containing CN groups, polymers containing CF.sub.3 groups, and combinations thereof.

[0014] In some embodiments, the p-type and n-type semiconductor materials are blended into one layer.

[0015] In some embodiments, the recombination layer includes two layers, one layer including the p-type semiconductor material and the other layer including the n-type semiconductor material.

[0016] In some embodiments, the first or second photoactive layer includes an electron donor material and an electron acceptor material.

[0017] In some embodiments, the electron donor material includes a polymer selected from the group consisting of polythiophenes, polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, polycyclopentadithiophenes, polysilacyclopentadithiophenes, polycyclopentadithiazoles, polythiazolothiazoles, polythiazoles, polybenzothiadiazoles, poly(thiophene oxide)s, poly(cyclopentadithiophene oxide)s, polythiadiazoloquinoxaline, polybenzoisothiazole, polybenzothiazole, polythienothiophene, poly(thienothiophene oxide), polydithienothiophene, poly(dithienothiophene oxide)s, polytetrahydroisoindoles, and copolymers thereof. For example, the electron donor material can include a polymer selected from the group consisting of polythiophenes (e.g., poly(3-hexylthiophene) (P3HT)), polycyclopentadithiophenes (e.g., poly(cyclopentadithiophene-co-benzothiadiazole)), and copolymers thereof.

[0018] In some embodiments, the electron acceptor material includes a material selected from the group consisting of fullerenes, inorganic nanoparticles, oxadiazoles, discotic liquid crystals, carbon nanorods, inorganic nanorods, polymers containing CN groups, polymers containing CF.sub.3 groups, and combinations thereof. For example, the electron acceptor material can include a substituted fullerene (e.g., C61-phenyl-butyric acid methyl ester (PCBM)).

[0019] In some embodiments, the first photoactive layer has a first band gap and the second photoactive layer has a second band gap different from the first band gap.

[0020] In some embodiments, the system further includes a hole carrier layer between the first photoactive layer and the first electrode. The hole carrier layer can include a polymer selected from the group consisting of polythiophenes, polyanilines, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, and copolymers thereof.

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