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02/14/08 - USPTO Class 219 |  38 views | #20080035612 | Prev - Next | About this Page  219 rss/xml feed  monitor keywords

Systems and methods utilizing an aperture with a reactive atom plasma torch

USPTO Application #: 20080035612
Title: Systems and methods utilizing an aperture with a reactive atom plasma torch
Abstract: A method for reducing heat applied to a workpiece by a plasma discharge of a reactive plasma torch comprises determining a footprint of the plasma discharge on a surface of the workpiece based on a distance of the reactive atom plasma torch from the surface, determining a maximum heat absorbable by the workpiece, and determining an adjusted footprint of the reactive atom plasma torch on the surface based on the maximum heat absorbable by the workpiece. An aperture of an aperture device is selected based on the adjusted footprint of the reactive atom plasma torch. The aperture device is then positioned so that a portion of the plasma is one or both of deflected and absorbed by the aperture device, thereby reducing the heat absorbed by the workpiece.
(end of abstract)
Agent: Fliesler Meyer LLP - San Francisco, CA, US
Inventors: Andrew Chang, Jeffrey W. Carr, Jude Kelley, Peter S. Fiske
USPTO Applicaton #: 20080035612 - Class: 219121440 (USPTO)

Related Patent Categories: Electric Heating, Metal Heating (e.g., Resistance Heating), By Arc, Using Plasma, Cutting, Methods
The Patent Description & Claims data below is from USPTO Patent Application 20080035612.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords

CLAIM OF PRIORITY

[0001] This application is a Continuation of U.S. patent application Ser. No. 10/911,821, entitled "Systems and Methods Utilizing an Aperture with a Reactive Atom Plasma Torch," by Andrew Chang, et al., filed Aug. 5, 2004, which claims priority to U.S. Provisional patent application No. 60/495,176, entitled "Systems and Methods Utilizing an Aperture with a Reactive Atom Plasma Torch," by Andrew Chang, et al., filed Aug. 14, 2003.

CROSS-REFERENCED CASES

[0002] The following patent and applications are cross-referenced and incorporated herein by reference:

[0003] U.S. patent application Ser. No. 10/008,236 entitled "Apparatus and Method for Reactive Atom Processing for Material Deposition," by Jeffrey W. Carr, filed Nov. 7, 2001, now U.S. Pat. No. 6,660,177 B2, issued Dec. 9, 2003.

[0004] U.S. patent application Ser. No. 10/384,506 entitled "Apparatus and Method for Non-Contact Cleaning of a Surface," by Jeffrey W. Carr, filed Mar. 7, 2003; PCT Application No. PCT/US2004/006773, filed Mar. 5, 2004, now published as WO 2004/081258 A2 on Sep. 23, 2004.

[0005] U.S. patent application Ser. No. 10/754,326, entitled "Apparatus for Non-Contact Cleaning of a Surface," by Jeffrey W. Carr, filed Jan. 9, 2004.

FIELD OF THE INVENTION

[0006] The field of the invention relates to the selective modification or removal of material from a surface.

BACKGROUND

[0007] Modern materials present a number of formidable challenges to the fabricators of a wide range of optical, semiconductor, and electronic components, many of which require precision shaping, smoothing, and polishing. The use of plasmas to etch materials has become an important technique in the optical component and semiconductor industries. Recent advances have introduced sub-aperture plasma processes, such as reactive atom processing (RAP), which act more like traditional machining tools by etching only specific areas of a workpiece.

[0008] A plasma etching process differs from its mechanical counterpart by the mechanism in which material is removed. Traditional machine tools use mechanical parts to physically cut away material from a workpiece. Plasma etching processes, on the other hand, rely upon chemical reactions to transform the solid material of the workpiece into a volatile or otherwise labile byproduct. Plasmas offer advantages such as the contact-free removal of material, in which little to no force is extered on the workpiece. Reliance upon a chemical means of material removal introduces a whole new set of factors to consider when treating a material.

[0009] A RAP torch can be used to deterministically shape and polish surfaces using a plasma or a flame. The discharge emitted from the RAP torch can remove material for the surface of a workpiece, somewhat analogous to the end mill used in traditional machining. The footprint of a typical RAP torch tool is roughly Gaussian in shape, and has a size that can be determined by the inside diameter of the outer tube that contains and directs the plasma host gas or non-reactive species.

[0010] In traditional machining, a variety of tool shapes and sizes are required. For maximum utility, machine tools have been designed to allow rapid interchange of bits and cutters. This approach is also possible with a RAP tool, but the presence of induction coils tends to complicate the changeover. Before any shift occurs, the unit must cool down and the enclosure must be purged of any dangerous fumes. The gas lines to the torch must be disconnected to remove the torch assembly and then purged before a new unit is installed. Depending on the size and type of the new torch, it may be necessary to replace coils used to generate the inductively coupled plasma (ICP). Once the torch assembly and coils have been swapped, the entire setup must be meticulously realigned and tested in order to assure proper function.

BRIEF DESCRIPTION OF THE FIGURES

[0011] FIG. 1 is a diagram of an ICP RAP torch system that can be used in accordance with one embodiment of the present invention.

[0012] FIG. 2 is a diagram showing the shape and footprint of a plasma discharge from a RAP torch such as that shown in FIG. 1.

[0013] FIG. 3 is a diagram showing the shape and footprint of the plasma discharge of FIG. 2 while passing the discharge through an aperture in accordance with one embodiment of the present invention.

[0014] FIG. 4 is a top view of a liquid-cooled aperture device that can be used with the torch of FIG. 1.

[0015] FIG. 5 is a perspective view of a trench that can be formed in a substrate using the torch of FIG. 2.

[0016] FIG. 6 is a perspective view of a trench that can be formed in a substrate by the torch and aperture combination of FIG. 3.

[0017] FIG. 7 is a top view showing a multi-aperture device that can be used with the torch of FIG. 1.

[0018] FIGS. 8(a) and 8(b) are diagrams of a plasma torch that can be used in place of the ICP RAP torch of FIG. 1.

[0019] FIG. 9 is a diagram of an MIP torch system that can be used in accordance with another embodiment of the present invention.

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