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Substrate processing method and substrate processing apparatusRelated Patent Categories: Etching A Substrate: Processes, Nongaseous Phase Etching Of SubstrateSubstrate processing method and substrate processing apparatus description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060163205, Substrate processing method and substrate processing apparatus. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] This invention relates to a substrate processing apparatus and substrate processing method for removing, utilizing a processing liquid, adhesives such as resist, polymers, etc., which adhere to the substrate during the process of the substrate, such as semiconductor device manufacturing process. [0003] 2. Description of the Related Art [0004] Recently, in the process of manufacturing semiconductor devices, the miniaturization of design rules has rapidly progressed. Along with this has come the use of a low-dielectric-constant organic film as an interlayer insulating film called low-k film, and the use of Cu having low electrical resistance as a wiring-layer material instead of Al, in view of the high speed operation of the semiconductor devices. [0005] Dual damascene process has been utilized to form Cu wiring layers with the interlayer insulating film being arranged between the adjacent Cu wiring layers. The dual damascene process, for example, is carried out in the following order. A stop layer is formed on the already-formed Cu wiring layer in the damascene structure of the under level, and on the stop layer a low-k interlayer insulating film is formed. On the interlayer insulating film, a resist film is formed according to a predetermined pattern. Via-etching is carried out by using the resist film as a mask. Then, after the resist film and the polymers in the hole are removed, a sacrifice layer is formed. Once again, a resist film with a specific pattern is formed on the interlayer insulating film, and trench etch is carried out by using the resist film as a mask. Then the resist and polymers in the hole are removed. Then, after the sacrifice layer and the stopper layer are removed by etching, a top Cu wiring or a plug is formed. [0006] The removal of the aforementioned resist and polymers is conducted by performing wet cleaning after dry ashing. This is because, it is not possible, until now, to completely remove the resist and the polymer only through the application of wet cleaning, utilizing a processing liquid. [0007] However, when dry ashing is conducted at the step of removing resist after the manner of pattern processing, damage is done to the low-k film that is the interlayer insulating film, causing a variety of problems with integration with the Cu wiring. SUMMARY OF THE INVENTION [0008] The objective of the present invention, developed in consideration of the aforementioned problems, is to provide a method and apparatus for removing a resist and a polymer layer without damaging the underlying layer. [0009] To attain the above objective, the present invention provides a substrate processing method, which includes: a step of preparing a substrate on which objects to be removed are adhered, the objects including a resist film and a polymer layer; a step of supplying a first processing liquid onto a substrate in such a manner that the first processing liquid flows on a surface of the substrate, thereby altering the condition of the objects; and a step of supplying a second processing liquid onto a substrate in such a manner that the second processing liquid flows on a surface of the substrate, thereby dissolving the objects thus altered by the first processing liquid and lifting them off from the substrate. [0010] The objects to be removed from the substrate may include a sputtered metal. In this case, the metal is oxidized by the first processing liquid in the step of supplying the first processing liquid, and the step of supplying the second processing liquid is carried out while avoiding oxidation of the substrate. [0011] According to the second aspect of the present invention, a substrate processing apparatus is provided, which includes: a rotor adapted to hold the substrate; an enclosure defining a processing space configured to accommodate the rotor; means for supplying a first processing liquid to the substrate, the first processing liquid having an ability of altering a condition of objects to be removed that are adhered on the substrate, the objects including a resist film and a polymer layer; means for supplying a second processing liquid to the substrate, the second processing liquid having an ability of dissolving the objects and lifting off the objects. [0012] The objects to be removed from the substrate may further include a sputtered metal. In this case, the first processing liquid further has an ability of oxidizing the metal, and the second processing liquid further has an ability of dissolving the sputtered metal oxidized by the first processing liquid. [0013] Preferably, the apparatus further include an inert gas feeder that supplies an inert gas to establish a non-oxidizing atmosphere in the processing space. [0014] The above and other objectives, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention in conjunction with the accompanying drawings. BREIF DESCRIPTION OF THE DRAWINGS [0015] FIG. 1 is a cross-sectional view of the wafer processing apparatus, in which the inner cylinder is imposed on the outer pipe; [0016] FIG. 2 is a cross-sectional view of the processing apparatus displaying the status in which the inner cylinder is in the position of being removed to the exterior of the outer cylinder; [0017] FIG. 3 is a cross-sectional view of the processing apparatus taken along the line A-A shown in FIG. 1; [0018] FIG. 4 is an enlarged cross-sectional view of the switching mechanism of the processing apparatus of FIG. 1, and parts disposed adjacent to the switching mechanism; [0019] FIG. 5 is an enlarged cross-sectional view of the seal mechanism of the processing apparatus of FIG. 1, and parts disposed adjacent to the switching mechanism; [0020] FIG. 6 is an illustration schematically showing the structure of the first processing liquid supply mechanism of the processing apparatus; [0021] FIGS. 7(a) to 7(c) are illustrations of filter devices that are attached to the recycle pipe of the first processing liquid supply mechanism of the processing apparatus shown in FIG. 6; Continue reading about Substrate processing method and substrate processing apparatus... 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