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Substrate processing apparatus and substrate processing methodRelated Patent Categories: Brushing, Scrubbing, And General Cleaning, Machines, With Air Blast Or SuctionSubstrate processing apparatus and substrate processing method description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070130716, Substrate processing apparatus and substrate processing method. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus and a substrate processing method that subject a substrate to predetermined processing. [0003] 2. Description of the Background Art [0004] Substrate processing apparatuses have been conventionally used to subject various types of substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, and glass substrates for optical disks, and other substrates to various types of processing. [0005] In the substrate processing apparatuses, a chemical liquid using BHF (buffered hydrofluoric acid), DHF (dilute hydrofluoric acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, ammonia, or the like is supplied to the substrate, to subject the substrate to surface processing (hereinafter referred to as chemical liquid processing). [0006] In the substrate processing apparatus that performs the chemical liquid processing, a deposit of the chemical liquid adheres to a tip portion of a nozzle for supplying the chemical liquid to the substrate. The deposit of the chemical liquid is formed by supplying the chemical liquid to the substrate using the nozzle and then drying the chemical liquid adhering to the tip portion of the nozzle. [0007] This phenomenon easily occurs when a chemical liquid containing a salt, e.g., a solution mixture of ammonium fluoride and hydrofluoric acid (BHF) or a solution mixture of ammonium fluoride and phosphoric acid is used. [0008] In a substrate processing apparatus that individually supplies an acid chemical liquid and an alkali chemical liquid to a substrate, when nozzles for respectively supplying the chemical liquids are arranged in close proximity to each other, components of the chemical liquids respectively adhering to the nozzles may be diffused into a peripheral atmosphere to react with each other, thereby producing a salt. In this case, a deposit is liable to adhere to tip portions of the nozzles. [0009] The deposit adhering to the tip portion of the nozzle grows as the chemical liquid is supplied to the substrate. In this case, the deposit that has grown drops on the substrate from the nozzle, or the supply conditions of the chemical liquid supplied from the nozzle to the substrate are changed so that processing defects occur in the substrate. [0010] In order to remove the deposit adhering to the tip portion of the nozzle, there is a chemical liquid supply nozzle with a nozzle cleaning mechanism that can uniformly clean a tip portion of a nozzle (see, e.g., JP 6--44137, U). [0011] The chemical liquid supply nozzle with a nozzle cleaning mechanism comprises a nozzle block having a through hole formed therein as the nozzle cleaning mechanism. The nozzle is inserted into the through hole of the nozzle block, thereby causing a gap to be formed between an outer peripheral surface of the nozzle and an inner peripheral surface of the nozzle block. [0012] After supplying the chemical liquid to the substrate, the nozzle is inserted into the nozzle block, so that a cleaning liquid is supplied to the gap between the nozzle and the nozzle block. This causes the cleaning liquid flowing into the gap between the nozzle and the nozzle block to flow into the tip portion of the nozzle, so that the chemical liquid adhering to the tip portion of the nozzle is cleaned away. As a result, the deposit is prevented from adhering to the tip portion of the nozzle. [0013] Even if the nozzle is cleaned with the cleaning liquid, as described above, however, the chemical liquid may slightly remain on a surface of the nozzle. In this case, a part of the chemical liquid is mixed into the cleaning liquid remaining on the main surface of the nozzle after the cleaning, and a crystal of the chemical liquid is deposited on the nozzle as the cleaning liquid is dried. As a result, the problems that the deposit drops on the substrate and the supply conditions of the chemical liquid are changed are not sufficiently solved. SUMMARY OF THE INVENTION [0014] An object of the invention is to provide a substrate processing apparatus and a substrate processing method in which processing defects in a substrate due to a deposit formed on a nozzle are sufficiently prevented. [0015] (1) A substrate processing apparatus according to an aspect of the present invention comprises a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to the first end opening and discharges a chemical liquid for processing a substrate from the first end opening; a chemical liquid supply system that is connected to the first flowpath and supplies the chemical liquid; and a suction device that is connected to the second flow path and applies suction through the second flow path. [0016] In the substrate processing apparatus, the nozzle has the first flow path having the first end opening and the second flow path having the second end opening. The first end opening of the first flow path and the second end opening of the second flow path are adjacent to each other. The chemical liquid is supplied to the first flow path from the chemical liquid supply system, and is discharged from the first end opening. Further, the suction device applies suction through the second flow path. [0017] In this case, the chemical liquid remaining in the vicinity of the first end opening is sucked in through the second flow path. This prevents the chemical liquid from remaining in the vicinity of the first end opening. [0018] In a case where a deposit of the chemical liquid is formed in the first flow path, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, and suction is applied through the second flow path, which causes the deposit of the chemical liquid to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining in the vicinity of the first end opening. [0019] This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining. As a result, processing defects in the substrate due to the deposit of the chemical liquid are sufficiently prevented. [0020] (2) The suction device may apply suction through the second flow path after the discharge of the chemical liquid through the first flow path from the chemical liquid supply system is completed. [0021] In this case, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, which causes the deposit in the first flow path to be cleaned away with the chemical liquid. Further, suction is applied through the second flow path, which can prevent the chemical liquid from remaining in the vicinity of the first end opening. [0022] This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining. Continue reading about Substrate processing apparatus and substrate processing method... Full patent description for Substrate processing apparatus and substrate processing method Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Substrate processing apparatus and substrate processing method patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. 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