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Solid-state image sensor having its photosensitive cells broadened in areaSolid-state image sensor having its photosensitive cells broadened in area description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060197859, Solid-state image sensor having its photosensitive cells broadened in area. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a solid-state image sensor and an image pickup apparatus using the same. More specifically, the present invention relates to a solid-state image sensor having an array of photosensitive cells generating signal charges in response to the amount of light incident thereto to output an electric signal derived from the signal charges. Also specifically, the present invention relates to an image pickup apparatus comprising the above image sensor and configured to pick up an image to produce corresponding image information to record such image information, the apparatus being implemented as, but not limited to, an electric still camera, image input apparatus, movie or a cellular phone. [0003] 2. Description of the Background Art [0004] U.S. Pat. No. 6,236,434 to Yamada, for example, discloses a solid-state image sensor including an array of photosensitive cells arranged in the following unique pattern. The photosensitive cells on one row or line are shifted from the photosensitive cells on another row or line adjoining it by substantially one-half of a pixel, or layout, pitch. Also, vertical transfer paths are formed on a semiconductor substrate in such a zigzag manner as to meander between nearby photosensitive cells; between ones of the photosensitive cells adjoining each other in the direction of rows or lines two vertical transfer paths are positioned while between ones of the photosensitive cells adjoining each other in the diagonal direction one vertical transfer path is positioned. With this arrangement, it is possible to optimize the spatial sampling points of an image captured and effect simultaneous readout of whole pixels. [0005] In the image sensor taught in the above document, signal charges generated in photosensitive cells positioned above and below non-photosensitive or invalid regions in the vertical direction of its imaging area are used to generate signal charges for the invalid regions in the form of virtual pixels. This is successful to equivalently implement an image resolution two times as great as the number of photosensitive cells actually arranged on the image sensor for thereby producing a high-quality image signal that includes a minimum of moire and other false signals. [0006] With the unique arrangement of photosensitive cells stated above, it is possible to broaden the range of configurations of color filters and those of microlenses applicable to a solid-state image sensor and therefore to increase the photo-sensitive efficiency of the image sensor. This, in turn, reduces the non-photosensitive or invalid regions as far as possible to thereby promote high integration of the image sensor. Further, the above solid-state image sensor is free from a difference in characteristic between photosensitive cells ascribable to relative displacements between photosensitive cells and vertical transfer paths, which are brought about on the fabrication process. The fabrication of such solid-state image sensors themselves is relatively easy because the conventional technology for producing a double-layer-deposited electrode structure is available. [0007] Today, there is an increasing demand for a further increase in the number of pixels included in a solid-state image sensor. However, the number of pixels cannot be increased without reducing the cell size, i.e. the size of the individual pixel and therefore the area ratio of channel stops separating the photosensitive cells from the vertical transfer paths as well as machining accuracy. SUMMARY OF THE INVENTION [0008] It is an object of the present invention to provide a solid-state image sensor that allows the cell size to be reduced for increasing the number of pixels while preserving the conventional characteristic, and an image pickup apparatus using the same. [0009] A solid-state image sensor of the present invention includes an array of photosensitive cells arranged on a semiconductor substrate for generating signal charges by photoelectric conversion. The photosensitive cells on any one row are arranged at a pitch and shifted in the direction of the row by an interval from the photosensitive cells on rows adjoining the above row. A plurality of column transfer paths transfer signal charges read out from the photosensitive cells in the direction of column. Transfer gates cause the signal charges stored in the photosensitive cells to be read out to the column transfer paths. A row transfer path transfers the signal charges input from the column transfer paths in the direction of row. The column transfer paths each are formed at one side of every other column of the photosensitive cells. The transfer gates each are positioned between a particular photosensitive cell and a particular column transfer path adjacent thereto at a side contacting the particular column transfer path. [0010] Also, an image pickup apparatus of the present invention includes a solid-state image sensor having the configuration described above to produce an image signal. The apparatus further includes a driver for generating a drive signal for driving the image sensor and feeding the drive signal to the image sensor, a timing signal generator for providing the driver with a timing for generating the timing signal, a controller for controlling the operation of the timing signal generator, a control panel for feeding an operation signal to the controller, and a signal processor for processing the image signal output from the image sensor. Again, the column transfer paths each are formed at one side of every other column of photosensitive cells while the transfer gates each are positioned between a particular photosensitive cell and a particular column transfer path adjacent thereto at a side contacting the particular column transfer path. BRIEF DESCRIPTION OF THE DRAWINGS [0011] The objects and features of the present invention will become more apparent from consideration of the following detailed description taken in conjunction with the accompanying drawings in which: [0012] FIG. 1 is a view schematically showing part of a solid-state image sensor embodying the present invention and implemented as a CCD image sensor; [0013] FIG. 2 is a view similar to FIG. 1, schematically showing an optimized form of the image sensor shown in FIG. 1; [0014] FIG. 3 is a timing chart showing drive signals for the image sensor of FIG. 1 or 2; [0015] FIG. 4 is a timing chart useful for understanding the application of the drive signals shown in FIG. 3, lines (B) through (E), in a usual readout mode; [0016] FIG. 5 is a potential chart schematically showing how packets are formed and shifted in response to the drive signals of FIG. 3; [0017] FIG. 6 schematically shows part of an alternative embodiment of the solid-state image sensor in accordance with the present invention and also implemented as a CCD image sensor; [0018] FIG. 7 schematically shows part of an alternative arrangement of color filter segments included in the image sensor of FIG. 6; [0019] FIG. 8 schematically shows part of an implementation included in the arrangement of FIG. 7 for coping with color shading; and [0020] FIG. 9 is a schematic block diagram showing a digital cameral including the solid-state image sensor of the present invention. 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