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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus thereforBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 11/28/2013 > 1 patent applications in 1 patent subcategories.
20130312657 - Crystal growth system and method for lead-contained compositions using batch auto-feeding: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal... Agent: H.c.materials Corporation11/21/2013 > 4 patent applications in 4 patent subcategories.
20130305981 - Manufacturing apparatus of sic single crystal, jig for use in the manufacturing apparatus, and method for manufacturing sic single crystal: A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and... Agent: Nippon Steel & Sumitomo Metal Corporation
20130305982 - Process for growing silicon carbide single crystal and device for the same: Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si—C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for... Agent:
20130305983 - Physical vapor transport growth system for simultaneously growing more than one sic single crystal and method of growing: The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing... Agent: Sicrystal Ag
20130305984 - Graphite crucible for single crystal pulling apparatus and method of manufacturing same: A graphite crucible (2) for retaining a quartz crucible (1) has a graphite crucible substrate (3) as a graphite crucible forming material, and a coating film (4) made of a carbonized phenolic resin and formed over the entire surface of the graphite crucible substrate (3). The phenolic resin is impregnated... Agent: Toyo Tanso Co., Ltd.11/14/2013 > 3 patent applications in 3 patent subcategories.
20130298821 - Method and apparatus for the production of crystalline silicon substrates: An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt... Agent: Amg Advanced Metallurgical Group N.v.
20130298822 - Silicon melt contact member, process for production thereof, and process for production of crystalline silicon: Provided are a silicon melt contact member which is markedly improved in liquid repellency to a silicon melt, which can retain the liquid repellency permanently, and which is suitable for production of crystalline silicon; and a process for efficient production of crystalline silicon, particularly, spherical crystalline silicon having high crystallinity,... Agent: Yamaguchi University
20130298823 - Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers... Agent:11/07/2013 > 1 patent applications in 1 patent subcategories.
20130291788 - Method for the preparation of doped garnet structure single crystals with diameters of up to 500 mm: Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained... Agent: Crytur Spol. S.r.o.Previous industry: Signals and indicators
Next industry: Coating apparatus
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