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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor December patent applications/inventions, industry category 12/13Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 12/26/2013 > 2 patent applications in 2 patent subcategories. patent applications/inventions, industry category
20130340671 - Silica glass crucible, method for manufacturing same, and method for manufacturing silicon single crystal: A method for manufacturing a silica glass crucible, includes: preparing a crucible base material that is made of silica glass and has a crucible shape; fabricating a synthetic silica glass material based on a direct method or a soot method; processing the synthetic silica glass material into the crucible shape... Agent: Shin-etsu Handotai Co., Ltd.
20130340672 - Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid.... Agent: The Regents Of The University Of California12/19/2013 > 3 patent applications in 2 patent subcategories. patent applications/inventions, industry category
20130333611 - Lattice matching layer for use in a multilayer substrate structure: A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a... Agent: Tivra Corporation
20130333613 - Method for surfactant crystal growth of a metal-nonmetal compound: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the... Agent: Mosiac Crystals Ltd.
20130333612 - Photoalignment of materials including liquid crystals: Embodiments described herein relate to compositions, devices, and methods for the alignment of certain materials including liquid crystals. In some cases, a photoresponsive material include a moiety capable of undergoing a di-pi-methane rearrangement. Methods described herein may provide chemically and/or thermally stable alignment materials for use in a various technologies,... Agent: Massachusetts Institute Of Technology12/12/2013 > 2 patent applications in 2 patent subcategories. patent applications/inventions, industry category
20130327265 - Method for producing silicon carbide crystal: There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000° C. and not more than 2500°... Agent: Sumitomo Electric Industries, Ltd.
20130327266 - Temperature-controlled purge gate valve for chemical vapor deposition chamber: The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In... Agent: Soitec12/05/2013 > 5 patent applications in 5 patent subcategories. patent applications/inventions, industry category
20130319317 - Crystal production method: A crystal production method includes the following steps. A material is melted in a crucible to form a thin film. A seed crystal is then contacted with the thin film to form a solid-liquid interface, wherein the shape and size of a bottom surface of the seed crystal is the... Agent: Hon Hai Precision Industry Co., Ltd.
20130319318 - Crystal holding mechanism of single crystal pulling device and method for producing single crystal ingot: The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion... Agent: Sumco Corporation
20130319319 - Susceptor and method for manufacturing epitaxial wafer using the same: The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having... Agent: Shin-etsu Handotai Co., Ltd.
20130319320 - Production method of an aluminum based group iii nitride single crystal: A production method of aluminum based group III nitride single crystal includes a reaction step, wherein a halogenated gas and an aluminum contact at 300° C. or more to 700° C. or less, producing a mixed gas including an aluminum trihalide gas and an aluminum monohalide gas; a converting step,... Agent: Tokuyama Corporation
20130319321 - Metallic crucibles and methods of forming the same: In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article.... Agent:Previous industry: Signals and indicators
Next industry: Coating apparatus
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