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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor March listing by industry category 03/12

20120073494 - Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride: A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is... Agent: Soraa, Inc.

20120073495 - Manufacturing method of silicon carbide single crystal: In a manufacturing method of a silicon carbide single crystal, a seed crystal made of silicon carbide is prepared. The seed crystal has a growth surface and a stacking fault generation region and includes a threading dislocation that reaches the growth surface. The growth surface is inclined at a predetermined... Agent: Denso Corporation

20120067272 - Single crystal pulling-up apparatus and single crystal pulling-up method: According to one exemplary embodiment, a single crystal pulling-up apparatus of pulling-up silicon single crystals by a Czochralski method, is provided with: a neck diameter measuring portion which measures a diameter of a grown neck portion; a first compensation portion which outputs a first compensated pulling-up speed for the seed... Agent: Covalent Materials Corporation

20120067273 - Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of... Agent: 1366 Technologies Inc.

20120067274 - Film forming apparatus, wafer holder, and film forming method: A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further... Agent: Hitachi Kokusai Electric Inc.

20120067275 - Compound semiconductor device including ain layer of controlled skewness: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the... Agent: Fujitsu Limited

20120060748 - Method and apparatus for continuous crystal growth: A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules... Agent: Siemens Medical Solutions Usa, Inc.

20120060749 - Apparatus of manufacturing silicon carbide single crystal and method of manufacturing silicon carbide single crystal: Disclosed is an apparatus (1) for manufacturing a silicon carbide single crystal, which comprises: a crucible main body (11) that is opened at the top and holds a sublimation material (50) in the bottom portion (11a); a cover member (12) which covers the upper opening (11b) of the crucible main... Agent: Bridgestone Corporation

20120060750 - Method of forming crystalline oxide semiconductor film: An oxide semiconductor film with excellent crystallinity is formed. At the time when an oxide semiconductor film is formed, as a substrate is heated to a temperature of higher than or equal to a first temperature and lower than a second temperature, a part of the substrate having a typical... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120060751 - Manufacturing method of silicon carbide single crystal: A manufacturing method of a SiC single crystal includes growing a SiC single crystal on a surface of a SiC seed crystal, which satisfies following conditions: (i) the SiC seed crystal includes a main growth surface composed of a plurality of sub-growth surfaces; (ii) among directions from an uppermost portion... Agent: Denso Corporation

20120055395 - Czochralski crystal growth process furnace that maintains constant melt line orientation and method of operation: A Czochralski process (“CZ”) crystal growth method and furnace having a heater capable of generating a heating zone, a crucible within the heating zone and capable of retaining a volume of molten crystal growth material forming a melt line oriented in a designated position within the heating zone, a seed... Agent: Siemens Medical Solutions Usa, Inc.

20120055396 - Intermediate materials and methods for high-temperature applications: A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a compound,... Agent: Advanced Renewableenergy Company LLC

20120048178 - Process for production of polycrystalline silicon: The invention provides a process for producing polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen by means of one or more nozzles into a reactor including at least one heated filament rod on which silicon is deposited, wherein an Archimedes number Arn which describes... Agent: Wacker Chemie Ag

20120048179 - Crystal growth apparatus with ceramic coating and methods for preventing molten material breach in a crystal growth apparatus: A method for preventing molten material breach in a crystal growth apparatus includes providing a chamber of the crystal growth apparatus which is coated with a ceramic material. The chamber can be coated on an interior surface to prevent damage to the chamber itself, which is made of steel, and... Agent: Gt Solar, Inc.

20120048180 - Film-forming manufacturing apparatus and method: It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas... Agent:

20120048181 - In-situ growth of engineered defects in graphene by epitaxial reproduction: Engineered defects are reproduced in-situ with graphene via a combination of surface manipulation and epitaxial reproduction. A substrate surface that is lattice-matched to graphene is manipulated to create one or more non-planar features in the hexagonal crystal lattice. These non-planar features strain and asymmetrically distort the hexagonal crystal lattice of... Agent: Raytheon Company

20120048182 - Gallium trichloride injection scheme: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V... Agent:

20120048183 - Method and apparatus for growth of multi-component single crystals: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.... Agent: Rensselaer Polytechnic Institute