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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor October categorized by USPTO classification 10/11

20110259259 - Method for manufacturing a silicon wafer: Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from... Agent: Sumco Corporation

20110259260 - Silicon single crystal pull-up apparatus and method of manufacturing silicon single crystal: A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation... Agent: Sumco Corporation

20110259261 - Reaction vessel for growing single crystal and method for growing single crystal: It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a... Agent: Toyoda Gosei Co., Ltd.

20110259262 - Systems and methods for growing monocrystalline silicon ingots by directional solidification: Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90),... Agent: Gt Solar, Inc.

20110253031 - Process for producing single-crystal sapphire: Following steps are implemented: a melting step in which aluminum oxide within a crucible is melted to obtain an aluminum melt; a shoulder-portion formation step in which a seed crystal brought into contact with the aluminum melt is pulled up to thereby form a shoulder portion below the seed crystal;... Agent: Showa Denko K.k.

20110253032 - Apparatus for manufacturing quantum dot with a plurality of heating zones and method for manufacturing quantum dot: Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer... Agent:

20110253033 - Crystal growing system and method thereof: Provided is a system and method for growing crystals. The method includes substantially fully covering a seed crystal in a charge material, using a heat source to melt the charge material, cooling the seed crystal to keep the seed crystal at least partially intact as the charge material melts, allowing... Agent: Advanced Renewableenergy Co. LLC

20110253034 - Crystal preparing device, crystal preparing method, and crystal: In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal... Agent:

20110247546 - Ribbon crystal string for increasing wafer yield: A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.... Agent: Evergreen Solar, Inc.

20110247547 - Process for producing single-crystal sapphire: Following steps are implemented: a melting step in which aluminum oxide within a crucible placed in a chamber is melted to obtain an aluminum melt; a shoulder-portion formation step in which a seed crystal brought into contact with the aluminum melt is pulled up to thereby form a shoulder portion... Agent: Showa Denko K.k.

20110247548 - Method for fabricating of zno particle and method for fabricating of zno rod: Disclosed herein are a method for preparing zinc oxide (ZnO) nanoparticles and a method for preparing ZnO nanorods. The method for preparing ZnO nanoparticles may include: preparing a growth solution containing a zinc salt, a precipitator, and a growth inhibitor; and applying heat to the growth solution to prepare ZnO... Agent: Gwangju Institute Of Science And Technology

20110247549 - Methods and apparati for making thin semiconductor bodies from molten material: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The... Agent: 1366 Technologies Inc.

20110247550 - Apparatus for making epitaxial film: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting... Agent:

20110239930 - Method for manufacturing silicon carbide single crystal: At a stage where the growth height of the silicon carbide single crystal 15 reaches 0.5 to several mm, the guide member 14 used at the initial growth stage is replaced with another guide member 14. This guide member 14 has a length and an angle θ to the growth... Agent: Bridgestone Corporation

20110239931 - Epitaxial silicon wafer and fabrication method thereof: An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the... Agent: Sumco Corporation

20110239932 - Method for reducing defects in epitaxially grown on the group iii-nitride materials: The present invention discloses a method to grow group III-nitride materials on a non-native substrate with much reduced threading dislocation (TD) density and smooth surface by using MBE. The first layer is to suppress the formation of screw TD while the second layer is to bend the propagation of edge... Agent: National Chiao Tung University

20110239933 - Device and method for the production of silicon blocks: Device for the production of silicon blocks, the device comprising a vessel for receiving a silicon melt with a bottom, an inside, an outside and a central longitudinal axis and at least one support plate which is at least partially in direct contact with the bottom, and which forms a... Agent: