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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor April category listing, related patent applications 04/11

20110094438 - Laminated body and the method for production thereof: The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an... Agent:

20110088612 - Method for producing silicon carbide single crystal: A method for producing a silicon carbide single crystal including a steps of, loading a sublimation-raw material into a reaction vessel of a production apparatus for a silicon carbide single crystal, and placing a seed crystal for a silicon carbide single crystal in such a manner that the seed crystal... Agent: Bridgestone Corporation

20110088613 - Process for controlling the growth of a raloxifene hydrochloride crystal: A process is described for controlling the growth of a raloxifene hydrochloride crystal i.e. for the control of raloxifene hydrochloride crystal size, comprising the steps of: a) heating under reflux a mass comprising crystalline raloxifene hydrochloride, methanol and water for a time of about 10 minutes; b) cooling the mass... Agent:

20110083601 - High growth rate deposition for group iii/v materials: Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized... Agent: Alta Devices, Inc.

20110083602 - Multi-rotation epitaxial growth apparatus and reactors incorporating same: A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is... Agent:

20110079175 - Image sensor and method for manufacturing the same: Provided are a quartz crucible and a method of manufacturing the quartz crucible. The quartz crucible is used in a single crystal growth apparatus. The quartz crucible comprises an inner layer including silica, and an outer layer including silica disposed outside the inner layer to surround the inner layer, wherein... Agent: