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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor March listing by industry category 03/11

20110073034 - Apparatus and process for crystal growth: The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein... Agent: Durham Scientific Crystals Limited

20110067625 - Crystal growth method and apparatus: A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the... Agent: Kabushiki Kaisha Toshiba

20110067626 - Apparatus for the fabrication of periodically poled frequency doubling crystals: c

20110061587 - Method of producing pretreated metal fluorides and fluoride crystals: [Means for Solution] A metal fluoride is heated in a temperature range of not lower than 300° K. but not higher than 1780° K in the co-presence of a carbonyl fluoride of an amount of not less than 1/100 mol per mol of the metal fluoride to thereby obtain a... Agent:

20110056427 - Single-crystal manufacturing apparatus and single-crystal manufacturing method: A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly... Agent: Shin-etsu Handotai Co., Ltd.

20110056428 - Method of producing single crystal silicon: The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides... Agent: Sumco Corporation

20110056429 - Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices: A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over... Agent: Soraa, Inc.

20110056430 - Equipment for growing sapphire single crystal: The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot... Agent:

20110048315 - Method and apparatus for venting gas between a crucible and a susceptor: During a CZ or similar process, a silica crucible is held in a graphite or similar susceptor while being heated to above between about 1580 and 1620 degrees C. Vents or grooves formed in at least one of the outer surface of the crucible and the inner surface of the... Agent:

20110048316 - High-temperature process improvements using helium under regulated pressure: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a... Agent: