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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor November recently filed with US Patent Office 11/10

20100294195 - Method for charging with liquefied ammonia, method for producing nitride crystal, and reactor for growth of nitride crystal: A method for charging with liquefied ammonia comprising sequentially a feeding step of feeding gaseous ammonia in a condenser, a liquefaction step of converting the gaseous ammonia into a liquefied ammonia in the condenser, and a charging step of feeding the liquefied ammonia formed in the condenser to a vessel... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, L.L.P.

20100294196 - Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate: The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to... Agent: Oliff & Berridge, PLC

20100294197 - Methods for producing epitaxially coated silicon wafers: Epitaxially coated silicon wafers are produced by placing a wafer polished on its front side on a susceptor in an epitaxy reactor, first pretreating under a hydrogen atmosphere and in a second and a third step with addition of an etching medium to the hydrogen atmosphere, and subsequently providing an... Agent: Brooks Kushman P.C.

20100294198 - Crystal growing system having multiple rotatable crucibles and using a temperature gradient method: A crystal growing system having multiple rotatable crucibles and using a temperature gradient method comprises a crystal furnace, a plurality of crucibles, a supporting device, and a temperature control device. The crystal furnace includes a furnace body, a heater, and a hearth, wherein the furnace body from outer to inner... Agent: Yichuan Pan

20100288184 - Silicon single crystal wafer for igbt and method for manufacturing silicon single crystal wafer for igbt: A method for manufacturing a silicon single crystal wafer for IGBT, including introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms/cm3 or less at a... Agent: Anton E. Skaugset Kolisch Hartwell, P.C.

20100288185 - Method and an apparatus for growing a silicon single crystal from a melt: Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the... Agent: Brooks Kushman P.C.

20100288186 - Formation of silicon sheets by impinging fluid: Techniques are generally disclosed for forming crystalline bodies. An example system, device or method for forming crystalline bodies may include a crucible for containing molten crystalline material and a support for accommodating a seed on an end thereof, the support being movable along a translation axis in a pull direction... Agent: Dorsey & Whitney LLP Intellectual Property Department

20100288187 - Method for growing silicon carbide single crystal: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20100288188 - Method for growing silicon carbide single crystal: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga,... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20100288189 - Floating semiconductor foils: One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density... Agent: Uri Cohen

20100288190 - Growth method of non-polarized-plane inn: A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O2 (100) substrate by the metal organic chemical vapor deposition (MOCVD), and m-plane is one kind of non-polarized-plane, In-rich denotes that the component of In x is higher than 0.3 in InxGa1−xN.... Agent: GlobalIPServices

20100288191 - Method of growing gallium nitride crystal and method of manufacturing gallium nitride substrate: In a method of growing a gallium nitride crystal, the following steps are performed. First, a base substrate is prepared. Then, a first gallium nitride layer is grown on the base substrate. Thereafter, a second gallium nitride layer less brittle than the first gallium nitride layer is grown.... Agent: Drinker Biddle & Reath (dc)

20100288192 - Method for manufacturing epitaxial silicon wafer: A silicon oxide film on a wafer front surface, including on internal surfaces of pits, is removed by hydrogen fluoride gas. The pits are thus completely filled with a film growth component at a time of epitaxial film growth. Thereby, productivity is not reduced; wafer flatness is enhanced; and micro-roughness... Agent: Greenblum & Bernstein, P.L.C

20100282160 - Single crystals and methods for fabricating same: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals... Agent: Larson Newman & Abel, LLP

20100275836 - Method for growing group iii nitride crystal: The present method for growing group III nitride crystal includes the steps of: preparing a substrate including group III nitride seed crystal constituting one main surface thereof; forming a plurality of facets on the main surface of the substrate through vapor phase etching; and growing group III nitride crystal on... Agent: Drinker Biddle & Reath (dc)

20100275837 - Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.... Agent: Gates & Cooper LLP Howard Hughes Center