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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor September class, title,number 09/10

20100242831 - Methods for weighing a pulled object having a changing weight: Methods are disclosed for pulling an object while measuring the weight of the object. The object is pulled upward using a cable extending over a first cylinder. The cable further extends over a second cylinder. The cable travels along a cable path between an uppermost portion of each of the... Agent: Richard A. Schuth (memc) Armstrong Teasdale LLP

20100242832 - Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal: Provided is a seed crystal for pulling a silicon single crystal that can reduce generation of slip dislocation due to thermal shock that occurs at the time of contact with a silicon melt, suppress propagation of this slip dislocation, and eliminate dislocation even though a diameter of a neck portion... Agent: Greenblum & Bernstein, P.L.C

20100242833 - Aln crystal and method of its growth: The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (4) having a major face (4m) with a 0 cm−2 density of... Agent: Judge Patent Associates

20100242834 - Method for producing single crystalline diamonds: A method for producing one or more single crystalline diamonds. The method comprises placing one or more substrates on a substrate holder in chemical vapor vaporization (CVD) chamber. A mixture of gases including at least one gas having a carbon component is provided adjacent to the one or more substrates... Agent: William L Botjer

20100242835 - High volume delivery system for gallium trichloride: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and... Agent: Winston & Strawn LLP Patent Department

20100242836 - Systems for weighing a pulled object: Pulling systems are disclosed for measuring the weight of an object coupled to a first end of a cable. The cable is routed over a pulley suspended from a load cell. The force exerted by the cable on the pulley is used to calculate the weight of the object. The... Agent: Richard A. Schuth (memc) Armstrong Teasdale LLP

20100236472 - Method for growing silicon carbide single crystal: A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20100236473 - Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of... Agent: Greenblum & Bernstein, P.L.C

20100229785 - Apparatus and method for producing single crystal: A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible... Agent: Oliff & Berridge, PLC

20100229786 - Method for growing group iii nitride crystal: A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the... Agent: Judge Patent Associates

20100229787 - Crystal manufacturing apparatus: A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel;... Agent: Dickstein Shapiro LLP

20100229788 - Three-dimensional gan epitaxial structure and manufacturing method thereof: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A... Agent: Muncy, Geissler, Olds & Lowe, PLLC

20100229789 - Beta-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method: A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the... Agent: Mcginn Intellectual Property Law Group, PLLC