SEARCH:      Monitor Keywords |  Custom RSS

Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor April category listing, related patent applications 04/10

20100101485 - Manufacturing method of silicon single crystal: In appropriate setting of magnetic field applied to a molten silicon 12 stored in a cylindrical quartz crucible 11, the maximum value B0 of magnetic flux density on a vertical symmetric axis 17 as a cylindrical axis of the quartz crucible 11 in horizontal magnetic field generated by a pair... Agent: Mcginn Intellectual Property Law Group, PLLC

20100101486 - Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal: Provided is a technique for stabilizing characteristics of an NdGaO3 substrate used for epitaxial growth so as to grow a fine nitride compound semiconductor single crystal with good reproducibility. A single crystal of NdGaO3 grown by a crystal pulling method is subjected to an annealing treatment at 1400° C. or... Agent: Birch Stewart Kolasch & Birch

20100095881 - Arc discharge apparatus, apparatus and method for manufacturing vitreous silica glass crucible, and method for pulling up silicon single crystal: The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm3... Agent: Greenblum & Bernstein, P.L.C

20100095880 - Arc melting high-purity carbon electrode and application thereof: An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does not cause local lack of the electrode and does not create black foreign materials or concave portions... Agent: Greenblum & Bernstein, P.L.C

20100095882 - Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals: The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple... Agent: K&l Gates LLPIPDocketing

20100095883 - Graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible: Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open... Agent: Mcdermott Will & Emery LLP

20100089308 - Silica glass crucible and method for pulling single-crystal silicon: A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240... Agent: Greenblum & Bernstein, P.L.C

20100089309 - Method for pulling silicon single crystal: The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under... Agent: Oliff & Berridge, PLC

20100089310 - Device and method for producing self-sustained plates of silicon or other crystalline materials: The device for producing a sheet of crystalline material by directional solidification of a material in liquid phase composed of a crucible provided with a bottom, side walls and at least one horizontal outlet slot arranged on a bottom part of a side wall. On its external surface in immediate... Agent: Oliff & Berridge, PLC

20100089311 - Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same: The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed... Agent: Kenyon & Kenyon LLP

20100089312 - Crystal grower with integrated litz coil: An apparatus and method of manufacturing a crystal grower is disclosed. The crystal growing apparatus includes a receptacle constructed to receive a material selected to grow a crystal and an induction heater constructed to heat the material, with the induction heater comprising a Litz coil and a hose constructed to... Agent: Ziolkowski Patent Solutions Group, Sc (zps)

20100083895 - Device and process for producing a block of crystalline material: A temperature gradient is established in a crystallization crucible by means of a heat source and a cooling system. The cooling system comprises a heat exchanger and an adjustable additional heat source. The cooling system is preferably formed by an induction coil cooled by a coolant liquid circulating in the... Agent: Oliff & Berridge, PLC

20100083896 - Method for producing sic single crystal: 5 to 30 at % of Ti and 1 to 20 at % of Sn or 1 to 30 at % of Ge are added to an Si melt, and SiC single crystal are grown from SiC seed crystal by holding the SiC seed crystal immediately beneath the surface of... Agent: Gifford, Krass, Sprinkle,anderson & Citkowski, P.c

20100083897 - Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same: The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed... Agent: Kenyon & Kenyon LLP