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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor July category listing 07/09

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
07/30/2009 > patent applications in patent subcategories. category listing

20090188425 - Crystal pulling apparatus and method for the production of heavy crystals: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are... Agent: Fulbright & Jaworski, LLP

20090188426 - Crystal-growing furnace with heating improvement structure: A crystal-growing furnace with a heating improvement structure includes a furnace body, a supporting table, a top heater, and a bottom heater. When the silicon material around the top heater is melted, molten silicon slurry will flow directly into the spacing among particles of the silicon material. This will expedite... Agent: Bacon & Thomas, PLLC

20090188427 - Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon: The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible.... Agent: Striker, Striker & Stenby

  
07/23/2009 > patent applications in patent subcategories. category listing

20090183670 - Apparatus for manufacturing high-quality semiconductor single crystal ingot and method using the same: The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a... Agent: Greer, Burns & Crain

  
07/16/2009 > patent applications in patent subcategories. category listing

20090178610 - Method of manufacturing a silicon carbide single crystal: Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20090178611 - Gallium trichloride injection scheme: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and... Agent: Winston & Strawn LLP Patent Department

  
07/09/2009 > patent applications in patent subcategories. category listing

20090173272 - Apparatus for pulling single crystal by cz method: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck... Agent: Husch Blackwell Sanders, LLP Husch Blackwell Sanders LLP Welsh & Katz

20090173273 - Method and apparatus for producing group iii nitride based compound semiconductor: The apparatus of the invention is provided for producing a group III nitride based compound semiconductor The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel... Agent: Mcginn Intellectual Property Law Group, PLLC

20090173274 - Production of a gan bulk crystal substrate and a semiconductor device formed thereon: A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.... Agent: Cooper & Dunham, LLP

20090173275 - Supporting table having heaters inside crystal-growing furnace: A supporting table having heaters inside a crystal-growing furnace includes a table plate and a plurality of supporting posts, wherein the supporting posts support the table plate and are, respectively, electrically connected with the heaters. Each supporting post includes, among others, a graphite electrode post, a metal electrode post, and... Agent: Bacon & Thomas, PLLC

20090173276 - High-purity vitreous silica crucible used for pulling large-diameter single-crystal silicon ingot: A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and... Agent: Greenblum & Bernstein, P.L.C

20090173277 - Cooling structure for body of crystal-growing furnace: A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower... Agent: Bacon & Thomas, PLLC

  
07/02/2009 > patent applications in patent subcategories. category listing

20090165700 - Inner crystallization crucible and pulling method using the crucible: A vitreous silica crucible for pulling single-crystal silicon, comprising a surface glass layer having a thickness of 100 μm from an inner surface of the crucible, and a glass layer provided below the surface glass layer in a thickness direction of the crucible and extending to a depth of 1... Agent: Greenblum & Bernstein, P.L.C

20090165702 - Self-coated single crystal, and production apparatus and process therefor: It is an object of the present invention to provide a self-coated single crystal that without any special step conducted after crystal growth, has its circumference coated with a layer of different properties. A self-coated single crystal according to the present invention is characterized in that in operations comprising melting... Agent: Young & Thompson

20090165701 - Vitreous silica crucible for pulling single-crystal silicon: A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time... Agent: Greenblum & Bernstein, P.L.C

20090165703 - Silicon ingot fabrication: A method of and apparatus for growing single crystal silicon ingots is disclosed. The apparatus includes a charge structure with one or more charge units that are substantially multi-crystalline or single crystal silicon. The silicon charge structure is preferably coupled to a single crystal seed structure that can be used... Agent: Haverstock & Owens LLP

20090165704 - Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon: A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is... Agent: Edwards Angell Palmer & Dodge LLP

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