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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor January USPTO class listing 01/08

20080022925 - Method for marking a crystalline material using cathodoluminescence: In a first exemplary embodiment of the present invention, a method is provided for marking a sample of a doped crystalline material. According to a feature of the present invention, the method comprises the steps of causing a controlled alteration to the crystalline material at a preselected spot on the... Agent: Davidson, Davidson & Kappel, LLC

20080022921 - Group iii-nitride crystal, manufacturing method thereof, group iii-nitride crystal substrate and semiconductor device: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing... Agent: Mcdermott Will & Emery LLP

20080022922 - Crystal pulling apparatus and method for the production of heavy crystals: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are... Agent: Fulbright & Jaworski, LLP

20080022923 - Seed holder for crystal growth reactors: A seed holder for use in a crystal growth reactor. The seed holder has a drool and a washer of outer diameter substantially the same as the drool inner diameter. A main body is disposed over the washer and drool, forming an enclosure above the washer and drool, the enclosure... Agent: Schnader Harrison Segal & Lewis, LLP

20080022924 - Methods of forming carbon-containing silicon epitaxial layers: In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an... Agent: Dugan & Dugan, PC

20080022926 - Reactor for extended duration growth of gallium containing single crystals: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during... Agent: VistaIPLaw Group LLP

20080022927 - Microfluidic device for controlled movement of material: A microfluidic device for controllably moving a material of interest includes a holding cavity configured to hold the material of interest and at least one actuator configured to induce an activation material to expand or contract. Expansion of the activation material decreases the size of the holding cavity to cause... Agent: Sughrue Mion, PLLC

20080017099 - Crystal growth method and apparatus: A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the... Agent: Amin, Turocy & Calvin, LLP

20080017100 - Method for fabricating single-crystal gan based substrate: A GaN based substrate is obtained with a simple etching. The GaN based substrate is separate from another base substrate with the etching. The whole process is easy and costs low. The substrate is made of a material having a matching lattice length for a lattice structure so that the... Agent: Troxell Law Office PLLC

20080017101 - Germanium deposition: A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction... Agent: Knobbe, Martens, Olsen & Bear LLP

20080011222 - Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer: The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw... Agent: Welsh & Katz, Ltd

20080011223 - Solid solution wide bandgap semiconductor materials: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film... Agent: Andrews Kurth LLP Intellectual Property Department

20080011224 - Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal: An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and calcium series material in atmosphere... Agent: Burr & Brown

20080006200 - Method and apparatus for producing large, single-crystals of aluminum nitride: A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure... Agent: Goodwin Procter LLP Patent Administrator

20080006201 - Method of growing gallium nitride crystal: The facet growth method grows GaN crystals by preparing an undersubstrate, forming a dotmask or a stripemask on the undersubstrate, growing GaN in vapor phase, causing GaN growth on exposed parts, suppressing GaN from growing on masks, inducing facets starting from edges of the masks and rising to tops of... Agent: Mcdermott Will & Emery LLP