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Shuiyuan Huang patents

Recent bibliographic sampling of Shuiyuan Huang patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):



07/25/13 - 20130187115 - Programmable metallization memory cells via selective channel forming
Programmable metallization memory cells include an electrochemically active electrode, an inert electrode and an internal layer between the electrochemically active electrode and the inert electrode. The internal layer having a fast ion conductor material and an apertured layer having a plurality of apertures defined by an electrically insulating material. Each...
Inventors: Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Michael Tang, Song S. Xue (Seagate Technology Llc)

05/03/12 - 20120104348 - Programmable metallization memory cells via selective channel forming
Methods for making a programmable metallization memory cell are disclosed....
Inventors: Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Michael Tang, Song S. Xue (Seagate Technology Llc)

11/03/11 - 20110267873 - Non-volatile memory with programmable capacitance
Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer...
Inventors: Shuiyuan Huang, Xuguang Wang, Dimitar V. Dimitrov, Michael Tang, Song S. Xue (Seagate Technology Llc)

08/11/11 - 20110193148 - Magnet-assisted transistor devices
A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of...
Inventors: Yang Li, Insik Jin, Harry Liu, Song S. Xue, Shuiyuan Huang, Michael X. Tang (Seagate Technology Llc)

01/13/11 - 20110007552 - Active protection device for resistive random access memory (rram) formation
Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control...
Inventors: Yongchul Ahn, Antoine Khoueir, Shuiyuan Huang, Peter Nicholas Manos, Maroun Khoury (Seagate Technology Llc)

01/13/11 - 20110006436 - Conductive via plug formation
Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier...
Inventors: Antoine Khoueir, Yongchul Ahn, Peter Nicholas Manos, Shuiyuan Huang, Ivan Petrov Ivanov (Seagate Technology Llc)

12/30/10 - 20100327248 - Cell patterning with multiple hard masks
A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask being an etch stop for the patterning process, and then patterning the first hard...
Inventors: Antoine Khoueir, Shuiyuan Huang, Andrew Habermas, Helena Stadniychuk, Ivan P. Ivanov, Yongchul Ahn (Seagate Technology Llc)

12/09/10 - 20100309717 - Non-volatile multi-bit memory with programmable capacitance
Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and...
Inventors: Xuguang Wang, Shuiyuan Huang, Dimitar Dimitrov, Michael Tang, Song Xue (Seagate Technology Llc)

08/05/10 - 20100197104 - Programmable metallization memory cells via selective channel forming
Methods for making a programmable metallization memory cell are disclosed....
Inventors: Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Michael Tang, Song S. Xue (Seagate Technology Llc)

05/06/10 - 20100109107 - Magnetic stack design with decreased substrate stress
A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler...
Inventors: Yongchul Ahn, Shuiyuan Huang, Antoine Khoueir, Paul Anderson, Lili Jia, Christina Laura Hutchinson, Ivan Ivanov, Dimitar Dimitrov (Seagate Technology Llc)

04/08/10 - 20100084724 - Memory cell with stress-induced anisotropy
A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular....
Inventors: Dimitar V. Dimitrov, Ivan Petrov Ivanov, Shuiyuan Huang, Antoine Khoueir, Brian Lee, John Stricklin, Olle Gunnar Heinonen, Insik Jin (Seagate Technology Llc)

03/25/10 - 20100072448 - Planar programmable metallization memory cells
Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters...
Inventors: Antoine Khoueir, Haiwen Xi, Shuiyuan Huang (Seagate Technology Llc)

02/18/10 - 20100038735 - Magnet-assisted transistor devices
A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of...
Inventors: Yang Li, Insik Jin, Harry Liu, Song S. Xue, Shuiyuan Huang, Michael X. Tang (Seagate Technology Llc)

01/14/10 - 20100006813 - Programmable metallization memory cells via selective channel forming
A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a...
Inventors: Haiwen Xi, Ming Sun, Dexin Wang, Shuiyuan Huang, Michael Tang, Song S. Xue (Seagate Technology Llc)

11/26/09 - 20090289290 - Non-volatile memory with programmable capacitance
Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer...
Inventors: Shuiyuan Huang, Xuguang Wang, Dimitar V. Dimitrov, Michael Tang, Song S. Xue (Seagate Technology Llc)

11/26/09 - 20090289240 - Non-volatile multi-bit memory with programmable capacitance
Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at...
Inventors: Xuguang Wang, Shuiyuan Huang, Dimitar Dimitrov, Michael Tang, Song Xue (Seagate Technology Llc)

Seagate Technology Llc

Archived*
(*May have duplicates - we are upgrading our archive.)

20120104348 - Programmable metallization memory cells via selective channel forming


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The bibliographic references displayed about Shuiyuan Huang's patents are for a recent sample of Shuiyuan Huang's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Shuiyuan Huang filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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