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Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry

Abstract: Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry are described. In one embodiment, active areas are formed over a substrate, with one of the active areas having a width of less than one micron, and with some of the active areas having different widths. A gate line is formed over the active areas to provide transistors having different threshold voltages. Preferably, the transistors are provided with different threshold voltages without using a separate channel implant for the transistors. In another embodiment, a plurality of shallow trench isolation regions are formed within a substrate and define a plurality of active areas having widths at least some of which being no greater than about one micron (or less), with some of the widths preferably being different. One or more gate lines may be coupled to the respective active areas to provide individual transistors, with the transistors corresponding to the active areas having the different widths having different threshold voltages. In another embodiment, two field effect transistors are fabricated having different threshold voltages without using a separate channel implant for one of the transistors versus the other. ...

USPTO Applicaton #: #20050287733 - Class: 438222000 (USPTO)

Related Patent Categories: Semiconductor Device Manufacturing: Process, Making Field Effect Device Having Pair Of Active Regions Separated By Gate Structure By Formation Or Alteration Of Semiconductive Active Regions, Having Insulated Gate (e.g., Igfet, Misfet, Mosfet, Etc.), Complementary Insulated Gate Field Effect Transistors (i.e., Cmos), Including Isolation Structure, Dielectric Isolation Formed By Grooving And Refilling With Dielectric Material, With Epitaxial Semiconductor Layer Formation
The Patent Description & Claims data below is from USPTO Patent Application 20050287733, Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry.

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