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  Semiconductor process chamberUSPTO Application #: 20070089836Title: Semiconductor process chamber Abstract: A process kit for a semiconductor process chamber is provided herein. In one embodiment, a process kit for a semiconductor processing chamber, includes one or more components fabricated from a metal-free sintered silicon carbide material. The process kit comprises at least one of a substrate support, a pre-heat ring, lift pins, and substrate support pins. In another embodiment, a semiconductor process chamber is provided, having a chamber body and a substrate support disposed in the chamber body. The substrate support is fabricated from metal-free sintered silicon carbide. Optionally, the process chamber may include a process kit having at least one component fabricated from a metal-free sintered silicon carbide. (end of abstract) Agent: MoserIPLaw Group / Applied Materials, Inc. - Shrewsbury, NJ, US Inventors: Craig Metzner, Per-Ove Hansson USPTO Applicaton #: 20070089836 - Class: 156345510 (USPTO) The Patent Description & Claims data below is from USPTO Patent Application 20070089836. Brief Patent Description - Full Patent Description - Patent Application Claims
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] Embodiments of the present invention generally relate to apparatus for fabricating integrated circuits. More specifically, the present invention relates to process chambers for fabricating thin films on substrates. [0003] 2. Description of the Related Art [0004] Thin films are generally fabricated in process chambers selectively adapted for performing various deposition, etch, and thermal processes, among other processes, upon substrates, such as silicon (Si) wafers, gallium arsenide (GaAs) wafers, glass or sapphire substrates, and the like. These processes often use or develop process environments (e.g., environments containing aggressive chemistries, plasmas, by-products, etc.) that may gradually erode, consume, or contaminate various exposed components of the processing chambers, such as substrate supports, substrate lift pins, process kits (e.g., heat rings, deposition rings, retaining rings, and the like), process shields (heat shields, plasma shields, and the like), and the like. [0005] As such, these components are periodically inspected, refurbished (e.g., cleaned), and/or replaced--typically, on a set maintenance schedule (e.g., after a predetermined number of manufacturing cycles). To increase overall lifetime and maintenance intervals, and thereby increase process equipment uptime and reduce the cost of production, these components are generally fabricated from materials resistant to specific processing environments present in process chamber. [0006] One such process-resistant material is silicon carbide (SiC). As an example, most process chambers for epitaxial deposition of silicon films utilize components fabricated from graphite having a silicon carbide coating. The silicon carbide coating is typically formed via chemical vapor deposition (CVD) upon the graphite components. However, silicon carbide deposited via CVD typically has a relatively low thickness and durability, which may wear sooner and is more susceptible to damage. The rapid deterioration of the CVD coating leads to more frequent refurbishment and/or replacement of coated components. In addition, thicker CVD coatings tend to have a higher intrinsic stress, leading to cracking, peeling, and/or delamination, and the like. Also, the thicker coated CVD parts can exaggerate thermal effects of a non-uniform CVD coating, which can lead to non-uniform process results. [0007] Silicon carbide components may also be formed from sintered and hot pressed silicon carbide having metallic binders, such as aluminum (Al), boron (B), beryllium (Be), and the like. However, the metallic binders added to the silicon carbide during sintering are typically released into the process chamber during high-temperature processes, such as epitaxial silicon deposition processes, chemical vapor deposition (CVD) processes, rapid thermal processes (RTPs), and the like. The released metals from the binders causes metal contamination of the thin films, substrate, and/or interior of the process chamber during processing, and can damage the devices on the wafer. [0008] Therefore, there is a need in the art for improved semiconductor substrate processing reactors. SUMMARY OF THE INVENTION [0009] A process kit for a semiconductor process chamber is provided herein. In one embodiment, a process kit for a semiconductor processing chamber, includes one or more components fabricated from a metal-free sintered silicon carbide material. The process kit comprises at least one of a substrate support, a pre-heat ring, a lift pin, and a substrate support pin. [0010] In another embodiment, a semiconductor process chamber is provided, having a chamber body and a substrate support disposed in the chamber body. The substrate support is fabricated from metal-free sintered silicon carbide. [0011] In another embodiment, a semiconductor process chamber includes a chamber body; a substrate support disposed in the chamber body, wherein the substrate support is fabricated from sintered silicon carbide using non-metallic sintering agents; and one or more of a pre-heat ring, a lift pin, and a substrate support pin, wherein at least one of the pre-heat ring, the lift pin, and the substrate support pin is fabricated from a solid silicon carbide (SiC) material sintered using non-metallic sintering agents. BRIEF DESCRIPTION OF THE DRAWINGS [0012] The teachings of the present invention will become apparent by considering the following detailed description in conjunction with the accompanying drawings, in which: [0013] FIG. 1 depicts a schematic, cross-sectional view of a semiconductor substrate process chamber in accordance with one embodiment of the present invention; [0014] FIG. 2 depicts a schematic, cross-sectional view of a substrate support of the kind that may be used in the process chamber of FIG. 1; [0015] FIG. 3 depicts a schematic, cross-sectional view of a lift pin of the kind that may be used in the process chamber of FIG. 1; [0016] FIG. 4 depicts a schematic, cross-sectional view of a pre-heat ring of the kind that may be used in the process chamber of FIG. 1; and [0017] FIG. 5 depicts a schematic, cross-sectional view of a substrate support pin of the kind that may be used in the process chamber of FIG. 1. [0018] Where possible, identical reference numerals are used herein to designate identical elements that are common to the figures. The images in the drawings are simplified for illustrative purposes and are not depicted to scale. [0019] The appended drawings illustrate exemplary embodiments of the invention and, as such, should not be considered as limiting the scope of the invention, which may admit to other equally effective embodiments. DETAILED DESCRIPTION [0020] The present invention provides a process chamber suitable for fabricating and/or treating thin films on substrates such as semiconductor wafers, glass or sapphire substrates, and the like (collectively and generically referred to herein as a "substrate"). The process chamber contains at least one component that is fabricated from a metal-free sintered silicon carbide. In one embodiment, the invention may be used in the fabrication of integrated semiconductor devices and circuits. Continue reading... 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