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Semiconductor package, method for fabricating the same, and semiconductor device

Semiconductor package, method for fabricating the same, and semiconductor device description/claims

The present application is a Divisional of U.S. application Ser. No. 11/196,321, filed Aug. 4, 2005, and claims priority under 35 USC 119(a) to Japanese Patent Application No. 2004-230718 filed on Aug. 6, 2004, the entire contents of each of which are hereby incorporated by reference.

(a) Field of the Invention

The present invention relates to a semiconductor package which is equipped with an LSI chip, a solid-state imaging element, a light receiving/emitting element or the like and is made of a resin, a method for fabricating the same, and a semiconductor device.

(b) Description of Related Art

Conventionally, a typical molding of a semiconductor package has been carried out by sandwiching a leadframe having leads, dam bars that couple the leads to each other and other components between respective regions of upper and lower parts of a molding die adjacent to its die cavity, pouring a resin in the die cavity, and then curing the resin.

FIG. 9 shows a cross sectional view illustrating a conventional optical device with a semiconductor package having an overhang structure.

As illustrated in FIG. 9, the optical device includes: an optical chip 101 such as a solid-state imaging element, a light receiving/emitting element or an LSI; leads 102 for sending and receiving signals between the optical chip 101 and an external device; fine metal wires 107 for connecting the optical chip 101 and the leads 102; a rectangular dished encapsulant 103 for sealing the leads 102; and a lid member 105 such as a glass window or a hologram which is attached to the top surface of the encapsulant 103. The encapsulant 103 is formed in one piece from a resin poured during molding.

The lid member 105 is attached to the top of the encapsulant 103, and the optical chip 101 is mounted at the center of the recess of the encapsulant 103. Therefore, the optical chip 101 is placed in an internal space 106 surrounded with the encapsulant 103 and the glass window 105.

In the conventional semiconductor packages, it is known that due to insufficient adhesive strength between leads and a resin, the resin is peeled off from the leads and water or moisture enters the inside of the semiconductor packages through bonded surfaces, or breakage chips resulting from partial peeling-off of the resin enter equipments or semiconductor devices during the fabrication, leading to various disadvantages.

An object of the present invention is to provide a semiconductor package with high reliability, a method for fabricating the semiconductor package, and a semiconductor device by taking measures to improve adhesivity of the leads of the semiconductor package to the resin.

The semiconductor package of the present invention has leads and an encapsulant for sealing part of each of the leads and is provided with a metal oxide film having a thickness of no less than 1.7 nm and no more than 80 nm on the surface of each of the leads.

With this configuration, adhesivity between a molding resin forming the encapsulant and the leads is improved, which prevents water or moisture from entering between the leads and the molding resin and prevents peeling-off of the molding resin. As a result, the reliability of the semiconductor package can be enhanced.

When the metal oxide film has a thickness of 10 nm or less, the aforementioned effect can be achieved while the efficiency in a plating process of the leadframe can be kept high.

The semiconductor device of the present invention is made by containing a semiconductor chip in the semiconductor package.

The method for fabricating the semiconductor package of the present invention comprises performing an oxidation treatment for a leadframe to form a metal oxide film having a thickness of no less than 1.7 nm and no more than 80 nm on the surface of the leadframe, and then forming an encapsulant with a molding material to seal parts of the leads.

According to the method, the semiconductor package having the aforementioned configuration can be obtained.

In the oxidation, the leadframe is preferably held in an atmosphere having an oxygen concentration of 20%±5% at a temperature in the range of 200 to 260° C. for one hour. Thus, a strong metal oxide film can be obtained.

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