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Semiconductor light emitting device, method of manufacturing same, and optical moduleRelated Patent Categories: Coherent Light Generators, Particular Active Media, SemiconductorSemiconductor light emitting device, method of manufacturing same, and optical module description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060187984, Semiconductor light emitting device, method of manufacturing same, and optical module. Brief Patent Description - Full Patent Description - Patent Application Claims
CROSS REFERENCES TO RELATED APPLICATIONS [0001] The present invention contains subject matter related to Japanese Patent Application JP 2005-042771 filed in the Japanese Patent Office on Feb. 18, 2005, the entire contents of which being incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor light emitting device in which an active layer includes a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), a method of manufacturing the semiconductor light emitting device, and an optical module. [0004] 2. Description of the Related Art [0005] In these years, since information volume has been increased and communication speed has become high, optical communication using optical fiber has been increasingly demanded. Accordingly, development of light emitting devices for optical communication in 1.3 .mu.m band or 1.5 .mu.m band, in which transmission loss of optical fiber is low has been actively implemented. Traditionally, the light emitting devices have been mainly fabricated from GaInAsP materials using an InP substrate. However, when the InP substrate is used, there has been a disadvantage that the cost is high since the substrate is expensive and a cooling system is necessary in manufacturing due to the poor temperature characteristics. [0006] Therefore, instead of the foregoing light emitting devices, fabricating a light emitting device using GaNAs materials on a GaAs substrate has been proposed (for example, refer to Japanese Unexamined Patent Application Publication No. H06-37355). When the GaAs substrate is used as above, the substrate is not expensive, and the temperature characteristics are superior (for example, refer to "Japan Journal of Applied Physics," 2000, 6A, p. 39) and therefore a cooling system is not necessary, leading to reductions in cost. SUMMARY OF THE INVENTION [0007] However, there has been a disadvantage that when the GaNAs materials are used, it is difficult to form favorable crystal and the life is short. [0008] In view of such a disadvantage, in the present invention, it is desirable to provide a semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using it. [0009] According to an embodiment of the present invention, there is provided a semiconductor light emitting device in which an active layer has a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), wherein impurity concentration of hydrogen (H) in the active layer is 3.times.10.sup.19 cm.sup.-3 or less, and the impurity concentration of aluminum (Al) in the active layer is 1.times.10.sup.18 cm.sup.-3 or less, or the impurity concentration of hydrogen in the active layer is 1.5.times.10.sup.18 cm.sup.-3, or less, and the impurity concentration of aluminum in the active layer is 4.times.10.sup.18 cm.sup.-3 or less. [0010] According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor light emitting device, in which an active layer has a well layer made of a compound semiconductor containing at least gallium, arsenic, and nitrogen, wherein an organic nitrogen compound is used as a raw material of nitrogen when forming the active layer, the flow rate of the organic nitrogen compound is 135 cm.sup.3/min or less, and thereby the impurity concentration of hydrogen in the active layer becomes 3.times.10.sup.19 cm.sup.-3 or less. [0011] According to an embodiment of the present invention, there is provided an optical module including a semiconductor light emitting device, wherein in the semiconductor light emitting device, an active layer has a well layer made of a compound semiconductor containing at least gallium, arsenic, and nitrogen, the impurity concentration of hydrogen in the active layer is 3.times.10.sup.19 cm.sup.-1 or less, and the impurity concentration of aluminum (Al) in the active layer is 1.times.10.sup.18 cm.sup.-3 or less, or the impurity concentration of hydrogen in the active layer is 1.5.times.10.sup.18 cm.sup.-3 or less, and the impurity concentration of aluminum in the active layer is 4.times.10.sup.18 cm.sup.-3 or less. [0012] According to the semiconductor light emitting device and the optical module of the embodiment of the present invention, the impurity concentration of hydrogen in the active layer is 3.times.10.sup.19 cm.sup.-3 or less, and the impurity concentration of aluminum in the active layer is 1.times.10.sup.18 cm.sup.-3 or less, or the impurity concentration of hydrogen in the active layer is 1.5.times.10.sup.18 cm.sup.-3 or less, and the impurity concentration of aluminum in the active layer is 4.times.10.sup.18 cm.sup.-3 or less. Therefore, the life can be prolonged so that, for example, the elapsed time that the operating current is increased up to 50% or more of the initial operating current is 1000 hours or more. [0013] In particular, when the thickness per one layer of the barrier layer in the active layer is in the range from 1 nm to 8 nm, the life can be further prolonged. [0014] Further, according to the method of manufacturing a semiconductor light emitting device of the embodiment of the present invention, an organic nitrogen compound is used as a raw material of nitrogen when forming the active layer, the flow rate of the organic nitrogen compound is 135 cm.sup.3/min or less, and thereby the impurity concentration of hydrogen in the active layer can be 3.times.10.sup.19 cm.sup.-3 or less. [0015] Other and further objects, features and advantages of the invention will appear more fully from the following description. BRIEF DESCRIPTION OF THE DRAWINGS [0016] FIG. 1 is a cross section showing a structure of a laser diode according to an embodiment of the present invention; [0017] FIG. 2 is a characteristics diagram showing a relation between the hydrogen concentration in an active layer shown in FIG. 1 and the life; [0018] FIG. 3 is a characteristics diagram showing a relation between the aluminum concentration in the active layer shown in FIG. 1 and the life; [0019] FIG. 4 is a characteristics diagram showing a relation between the hydrogen concentration in the active layer shown in FIG. 1 and the emission intensity; [0020] FIG. 5 is a characteristics diagram showing a relation between the thickness of a barrier layer shown in FIG. 1 and the life; Continue reading about Semiconductor light emitting device, method of manufacturing same, and optical module... 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