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Semiconductor devices and methods for depositing a dielectric filmRelated Patent Categories: Semiconductor Device Manufacturing: Process, Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor SubstrateSemiconductor devices and methods for depositing a dielectric film description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20060148269, Semiconductor devices and methods for depositing a dielectric film. Brief Patent Description - Full Patent Description - Patent Application Claims
RELATED APPLICATIONS [0001] This application is a Divisional of U.S. application Ser. No. 10/788,892, filed Feb. 27, 2004, which is incorporated herein by reference. TECHNICAL FIELD [0002] The present invention relates generally to methods and apparatus for substrate processing, and more particularly to methods and apparatus for improved deposition of dielectric films on a semiconductor substrate. BACKGROUND [0003] One process that is performed during the fabrication of a semiconductor device is to form a dielectric film, such as silicon oxide (SiO.sub.2) or silicon nitride (SiN.sub.2), on a semiconductor substrate. A thermal chemical vapor deposition (CVD) process is sometimes used to deposit such films. In this process, reactive gases are supplied to a substrate surface, and heat-induced chemical reactions take place to produce the desired film. [0004] Various combinations of reactive gasses have been used to produce silicon oxide and silicon nitride dielectric films. These combinations generally include a silicon source and an oxidizing or nitridizing species. For example, dichlorosilane (SiH.sub.2Cl.sub.2), also referred to as DCS, has been used as a silicon source, and nitrous oxide (N.sub.2O) has been used as an oxidizing species. Ammonia (NH.sub.3) has been used as a nitrogen source. [0005] In a multi-wafer CVD system, multiple semiconductor wafers are loaded into a reaction tube, the tube is heated, and the reactive gasses are introduced at an entry point at a one end of the tube. The gasses pass over the wafers and through the tube to an exit point. During the reaction, the DCS may be subjected to dissociation of hydrogen to produce dichlorosilane (SiCl.sub.2) and hydrogen (H.sub.2) as shown in the following equation (1). SiH.sub.2Cl.sub.2.fwdarw.SiCl.sub.2+H.sub.2 (1) At a high temperature, the chemical bond between the silicon atom and both the two chlorine atoms and the hydrogen atom are subjected to the elimination of hydrogen and chlorine to make the silicon atom into a new silicon atom terminated by the sole chlorine atom. Meanwhile, thermal decomposition of the N.sub.2O occurs all along the tube, and the thermal decomposition of the N.sub.2O is catalyzed by the chlorine by-product. [0006] At the entry end of the reaction tube, the amount of chlorine gas available from the DCS decomposition is relatively small. Therefore, the decomposition rate of the N.sub.2O is simply characteristic of a thermally-driven decomposition. However, further along the tube, a higher concentration of chlorine exists as a by-product of the DCS decomposition. The higher abundance of chlorine increasingly interacts with and enhances the decomposition and reaction of the N.sub.2O, which increases the oxidation reaction rate. Accordingly, at the entry end of the tube, a more nitrogen rich environment exists, and toward the exit end of the tube, a more chlorine rich environment exists. This causes a non-stable reaction stoichiometry and rate from one end of the tube to the other. The result is that oxide films deposited near the entry end of the tube are thinner than oxide films deposited further down the tube. [0007] What are needed are methods and apparatus for depositing dielectric layers in a more stable manner. Further needed are methods and apparatus for stabilizing the reaction stoichiometry and the reaction rate in various CVD systems, including CVD systems that utilize reaction tubes. BRIEF DESCRIPTION OF THE DRAWINGS [0008] FIG. 1 illustrates a schematic representation of a deposition system suitable for depositing a dielectric film, in accordance with an embodiment of the invention; [0009] FIG. 2 illustrates a flowchart of a method for producing a dielectric film on a substrate, in accordance with an embodiment of the invention; [0010] FIG. 3 illustrates a fragmentary, cross-sectional view of a generic semiconductor device, partially formed in accordance with an embodiment of the invention; [0011] FIG. 4 illustrates a fragmentary, cross-sectional view of a capacitive component, partially formed in accordance with an embodiment of the invention; [0012] FIG. 5 illustrates a fragmentary, cross-sectional view of a semiconductor device having an oxide-nitride-oxynitride (ONO) stack, partially formed in accordance with an embodiment of the invention; [0013] FIG. 6 illustrates a fragmentary, cross-sectional view of a stacked capacitor, partially formed in accordance with an embodiment of the invention; [0014] FIG. 7 illustrates a fragmentary, cross-sectional view of a semiconductor device having a trench with an isolation liner, formed in accordance with an embodiment of the invention; [0015] FIG. 8 illustrates a fragmentary, cross-sectional view of a portion of an optical waveguide, partially formed in accordance with an embodiment of the invention; and [0016] FIG. 9 illustrates an electronic system, which includes at least one semiconductor device, partially formed in accordance with an embodiment of the invention. DESCRIPTION OF THE EMBODIMENTS [0017] In the following description of the embodiments, reference is made to the accompanying drawings, which form a part hereof and show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized, and that process or mechanical changes may be made, without departing from the scope of the present invention. It will be recognized that the methods of the various embodiments can be combined in practice, either concurrently or in succession. Various permutations and combinations will be readily apparent to those skilled in the art. [0018] The various embodiments of the invention, described in detail herein, involve new and novel methods and apparatus for depositing dielectric layers. The embodiments of the present invention have several significant advantages over prior art methods. First, use of the embodiments of the invention result in deposition of dielectric layers in a more stable manner than is achieved using prior art methods. Further, use of the embodiments of the invention result in stabilization of the reaction stoichiometry and the reaction rate in various CVD systems. [0019] FIG. 1 illustrates a schematic representation of a low pressure chemical vapor deposition (CVD) system 100 suitable for depositing a dielectric film, in accordance with an embodiment of the invention. In various embodiments, the system 100 is used to deposit an oxide film, a nitride film, and/or an oxynitride film on a substrate. In one embodiment, system 100 includes a reaction tube 110, gas sources 130, 132, 134, 136, 138, valves 140, 142, flow controllers 144, 146, manifolds 150, 152, and pump 160. 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