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  Semiconductor device with improved heat dissipation, and a method of making semiconductor deviceUSPTO Application #: 20060019430Title: Semiconductor device with improved heat dissipation, and a method of making semiconductor device Abstract: A semiconductor device includes a semiconductor chip, a heat dissipation member for dissipating heat generated by the semiconductor chip, and a coupling member which thermally couples the semiconductor chip to the heat dissipation member, wherein the coupling member is made of metal and deformable to absorb a stress generated between the semiconductor chip and the heat dissipation member, the coupling member and the semiconductor chip being joined through metal-metal bonding. (end of abstract) Agent: Westerman, Hattori, Daniels & Adrian, LLP - Washington, DC, US Inventor: Hideaki Yoshimura USPTO Applicaton #: 20060019430 - Class: 438122000 (USPTO) Related Patent Categories: Semiconductor Device Manufacturing: Process, Packaging (e.g., With Mounting, Encapsulating, Etc.) Or Treatment Of Packaged Semiconductor, Metallic Housing Or Support, Possessing Thermal Dissipation Structure (i.e., Heat Sink) The Patent Description & Claims data below is from USPTO Patent Application 20060019430. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] This application is a divisional of application Ser. No. 10/772,252, filed Feb. 6, 2004. CROSS-REFERENCE TO RELATED APPLICATIONS [0002] The present application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2003-044335 filed on Feb. 21, 2003, with the Japanese Patent Office, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0003] 1. Field of the Invention [0004] The present invention generally relates to semiconductor devices and methods of making the semiconductor devices, and particularly relates to a semiconductor device and a method of making the semiconductor device in which the efficiency of heat dissipation regarding heat generated by a semiconductor chip is improved. [0005] 2. Description of the Related Art [0006] In recent years, the circuit integration of semiconductor chips has been further enhanced, and there has been a demand for higher density for the implementation of semiconductor devices. Against this background, BGA-type semiconductor devices and LGA-type semiconductor devices, which achieve shorter pitches for external connection terminals (bumps, lands, etc.) compared with QFP (quad flat package)-type semiconductor devices, have been attracting attention, and have been put to practical use. [0007] Moreover, the heat radiation of semiconductor devices increases as the circuit integration of semiconductor chips are further enhanced, resulting in a need to improve heat dissipation characteristics of semiconductor devices. [0008] Various related-art semiconductor devices have been proposed that shorten the pitches of external connection terminals and improve heat dissipation characteristics (for example, Patent Document 1-4). FIG. 1 is an illustrative drawing showing an example of a related-art semiconductor device which is aimed at improving heat dissipation characteristics. A semiconductor device 1 shown in FIG. 1 has an FC-BGA (flip-chip bump grid-array package) structure, and schematically includes a semiconductor chip 2, a package substrate 3, a heat dissipation member 4, and solder balls 5. [0009] The semiconductor chip 2 is mounted through flip-chip implementation on the upper surface of the package substrate 3. The solder balls 5 serving as external connection terminals are provided on the lower surface of the package substrate 3. The package substrate 3 is a multi-layered substrate, and the semiconductor chip 2 and the solder balls 5 are electrically coupled through internal wiring. [0010] The heat dissipation member 4 serves as a lid that protects the semiconductor chip 2, and also serves as a heat dissipation plate that dissipates heat generated by the semiconductor chip 2. Because of this, the semiconductor chip 2 and the heat dissipation member 4 need to be thermally coupled. In the related art, a thermal coupling member 6 (hereinafter simply referred to as a coupling member) is used to provide thermal coupling between the back surface of the semiconductor chip 2 and the interior surface of the heat dissipation member 4. [0011] In such a structure, two schemes as described in the following are typically employed as a heat conduction mechanism that conducts heat from the back surface of the semiconductor chip 2 to the heat dissipation member 4. [0012] One of the schemes (scheme (a)) is to use a heat conductor such as grease (compound) or a heat conductive adhesive that has stress relaxation characteristics, and provide such heat conductor as the coupling member 6 between the semiconductor chip 2 and the heat dissipation member 4 in order to prevent the lowering of reliability that is caused by a mismatch of the coefficient of thermal expansion resulting from the differences of materials between the semiconductor chip 2 and the heat dissipation member 4. The other scheme (scheme (b)) is to provide a material (e.g., a composite material of Cu--W, carbon, and aluminum, etc.) having the coefficient of thermal expansion close to that of the semiconductor chip 2, thereby connecting between the semiconductor chip 2 and the heat dissipation member 4 through soldering. [0013] [Patent Document 1] [0014] Japanese Patent Publication No. 57-176750 [0015] [Patent Document 2] [0016] Japanese Patent Publication No. 01-117049 [0017] [Patent Document 3] [0018] Japanese Patent Publication No. 10-050770 [0019] [Patent Document 4] [0020] Japanese Patent Publication No. 11-067998 [0021] In the scheme (a) described above, either grease (compound) or a heat conductive adhesive has high thermal resistance, giving rise to a problem in that thermal conduction from the semiconductor chip 2 to the heat dissipation member 4 is not efficiently carried out. In the scheme (b) described above, the composite material of Cu--W, carbon, and Al or the like is used as a material having the coefficient of thermal expansion close to that of the semiconductor chip 2. Such material has relatively low thermal conductivity, compared with Cu or the like that has satisfactory heat dissipation characteristics. Because of this, the scheme (b) can only be used for a package in which heat generation by the semiconductor chip 2 is relatively low. [0022] Accordingly, there is a need for a semiconductor device and a method of making the semiconductor device wherein heat generated by the semiconductor device is reliably dissipated, and, also, stress generated inside the device is reduced. SUMMARY OF THE INVENTION [0023] It is a general object of the present invention to provide a semiconductor device and a method of making the semiconductor device that substantially obviate one or more problems caused by the limitations and disadvantages of the related art. [0024] Features and advantages of the present invention will be presented in the description which follows, and in part will become apparent from the description and the accompanying drawings, or may be learned by practice of the invention according to the teachings provided in the description. Objects as well as other features and advantages of the present invention will be realized and attained by a semiconductor device and a method of making the semiconductor device particularly pointed out in the specification in such full, clear, concise, and exact terms as to enable a person having ordinary skill in the art to practice the invention. [0025] To achieve these and other advantages in accordance with the purpose of the invention, the invention provides a semiconductor device, including a semiconductor chip, a heat dissipation member for dissipating heat generated by the semiconductor chip, and a coupling member which thermally couples the semiconductor chip to the heat dissipation member, wherein the coupling member is made of metal and deformable to absorb a stress generated between the semiconductor chip and the heat dissipation member, the coupling member and the semiconductor chip being joined through metal-metal bonding. Continue reading... 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