Semiconductor device manufacturing: process patents - Monitor Patents
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Semiconductor device manufacturing: process

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
05/21/2015 > 155 patent applications in 99 patent subcategories.

20150140686 - Forming magnetic microelectromechanical inductive components: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is... Agent:

20150140687 - Forming magnetic microelectromechanical inductive components: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is... Agent:

20150140685 - Manufacturing method for pattern multilayer body and mask set: A method for manufacturing a pattern multilayer body that has a plurality of pattern layers, and where a pattern is formed in each pattern layer, includes a step of forming an overlay pattern within an overlay pattern formation region, and in the step of forming the overlay pattern, a photoresist... Agent: Tdk Corporation

20150140690 - Etching method for semiconductor product: There is provided an etching method for a semiconductor product. The semiconductor product having, on a substrate, an SiO2 layer, and an Si layer with a free surface and directly stacked on the SiO2 layer is prepared. The Si layer is etched. Etching is performed while supplying an etching solution... Agent: Tohoku University

20150140688 - Setup for multiple cross-section sample preparation: A multiple-sample-holder polishing setup for cross-section sample preparation and a method of making a device using the same are presented. The multiple-sample-holder polishing setup includes a frame. The frame has a hollow center, one or more long and short rods and a recess for accommodating a polishing head. The setup... Agent: Globalfoundries Singapore Pte. Ltd.

20150140689 - Substrate bonding method and substrate bonding apparatus: According to one embodiment, there is provided a substrate bonding method. The substrate bonding method includes disposing a first substrate and a second substrate to face each other. The substrate bonding method includes controlling the first substrate and the second substrate to have a temperature difference. The substrate bonding method... Agent:

20150140691 - Systems and methods for chemical mechanical planarization with fluorescence detection: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization on an article includes a polishing head configured to perform a chemical-mechanical planarization (CMP) on an article, a polishing pad configured to support the article, a light source configured to emit... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150140692 - Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device: An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing a target width of a gate; forming the gate on the semiconductor substrate, in which the gate has a measured width; depositing a dielectric layer covering the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150140694 - Gas supply device, film forming apparatus, gas supply method, and storage medium: A gas supply device for intermittently supplying raw material gas into a film forming process unit that includes a raw material container for accommodating a raw material, a carrier gas supply unit for supplying carrier gas to evaporate the raw material, a raw material gas supply path for supplying the... Agent:

20150140695 - Method and system for determining overlap process windows in semiconductors by inspection techniques: The formation of overlap areas in sophisticated semiconductor devices is a critical aspect which may not be efficiently evaluated on the basis of conventional measurement and design strategies. For this reason, the present disclosure provides measurement techniques and systems in which overlying device patterns are transformed into the same material... Agent:

20150140693 - Misalignment/alignment compensation method, semiconductor lithography system, and method of semiconductor patterning: A misalignment/alignment compensation method for a lithography process includes the steps of: obtaining misalignment data associated with an alignment mark disposed on a substrate; and obtaining a compensation parameter by performing asymmetry compensation calculation on at least one of a first directional component of the misalignment data, which is associated... Agent:

20150140696 - Combinatorial method for solid source doping process development: One or more small spot showerhead apparatus are used to provide dopant exposure and/or to deposit materials using CVD, PECVD, ALD, or PEALD on small spots in a site isolated, combinatorial manner. The small spot showerheads may be configured within a larger combinatorial showerhead to allow multi-layer film stacks to... Agent: Intermolecular, Inc.

20150140697 - Test macro for use with a multi-patterning lithography process: A method for forming an integrated circuit having a test macro using a multiple patterning lithography process (MPLP) is provided. The method includes forming an active area of the test macro having a first and second gate region during a first step of MPLP, and forming a first and second... Agent:

20150140698 - Test macro for use with a multi-patterning lithography process: A method for forming an integrated circuit having a test macro using a multiple patterning lithography process (MPLP) is provided. The method includes forming an active area of the test macro having a first and second gate region during a first step of MPLP, and forming a first and second... Agent:

20150140699 - Methods of forming oxide semiconductor devices and methods of manufacturing display devices having oxide semiconductor devices: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to... Agent:

20150140703 - Led device with improved thermal performance: An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening.... Agent:

20150140701 - Method for manufacturing light emitting diode package: A method for manufacturing an LED (light emitting diodes) package includes providing a substrate having electrodes; providing an LED chip, the LED chip arranged on the substrate and electrically contacting the electrodes; providing an UV-curing adhesive layer, the UV-curing adhesive layer arranged on the substrate and entirely packaging the LED... Agent:

20150140702 - Method for manufacturing semiconductor light emitting device: The method for manufacturing the semiconductor light emitting device includes steps of forming a plurality of semiconductor light emitting element regions on a substrate, forming a recess portion between the plurality of semiconductor light emitting element regions on a surface of the substrate, disposing a light reflective sealing resin on... Agent:

20150140700 - Method for producing phosphor dispersion liquid and method for manufacturing led device: The present invention addresses the problem of providing a method for producing a phosphor dispersion liquid, which is not susceptible to settling of phosphor particles, without deteriorating the phosphor particles. In order to solve the above-mentioned problem, the present invention provides a method for producing a phosphor dispersion liquid that... Agent:

20150140704 - Cleaning solution and method for manufacturing display device using the same: A cleaning solution and a method for manufacturing a display device, the cleaning solution including about 2 wt % to about 12 wt % of nitric acid; about 0.5 wt % to about 15 wt % of an organic acid; about 0.1 wt % to about 10 wt % of... Agent:

20150140705 - Method for manufacturing display panel: A method for manufacturing a display panel, including defining a desorbing area of a support substrate by forming one of a release layer or a recess portion in the desorbing area, cleaning a surface of the support substrate, disposing a thin film substrate on the support substrate, directly bonding, in... Agent:

20150140708 - Light emitting device with light path changing structure: The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing... Agent: Electronics And Telecommunications Research Institute

20150140706 - Screen printing method of led module with phosphor: A screen printing method of LED module with phosphor includes: board preparation providing an LED module board with a substrate and a plurality of LED sources fixed on the substrate. The LED sources are flip chip structural and the metal electrodes thereof are fixed to the bonding pads of the... Agent: Xiamen Friendly Lighting Technology Co., Ltd.

20150140707 - Semiconductor light emitting device and manufacturing method thereof: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and... Agent:

20150140709 - Liquid crystal display device: A method for fabricating a liquid crystal display device including a TFT substrate having an alignment film formed thereon, an opposing substrate, and a liquid crystal layer sandwiched therebetween. The alignment film on the TFT substrate includes a photolytic polymer made from a first precursor including cyclobutane, and a non-photolytic... Agent:

20150140710 - Manufacturable laser diode formed on c-plane gallium and nitrogen material: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding... Agent:

20150140711 - Method of separating a wafer of semiconductor devices: A method according to embodiments of the invention includes providing a wafer comprising a semiconductor structure grown on a growth substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. The wafer includes trenches defining individual semiconductor devices. The trenches extend through... Agent:

20150140712 - Etchant and method for manufacturing display device using the same: An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to... Agent:

20150140713 - Peeling apparatus and manufacturing apparatus of semiconductor device: To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization... Agent:

20150140715 - Ink for forming functional layer, method of manufacturing ink for forming functional layer, and method of manufacturing organic electro-luminescence element: An ink for forming a functional layer, which is used when any thin film layer among functional layers consisting of a plurality of thin film layers is formed, includes a functional layer forming material and a solvent for dissolving the functional layer forming material, and in which the number of... Agent:

20150140714 - Method for preventing short circuit between metal wires in organic light emitting diode display device: Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming a metal layer including two metal wires on the inorganic layer; forming an organic layer on the two metal... Agent:

20150140716 - Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition: A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in... Agent:

20150140717 - Method for manufacturing a structured surface: A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an... Agent:

20150140718 - Diffusing agent composition, and method for forming an impurity diffusion layer: A diffusing agent composition including a condensation product and an impurity diffusion component. The condensation product is a reaction product resulting from hydrolysis of an alkoxysilane. The impurity diffusion component is a monoester or diester of phosphoric acid, or a mixture thereof.... Agent:

20150140719 - Vertical conductive connections in semiconductor substrates: An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive... Agent:

20150140720 - Process for manufacturing a photonic circuit with active and passive structures: A process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer; patterning the high refractive index waveguide layer to generate a passive photonic structures; planarizing the first layer stack with a planarizing... Agent:

20150140721 - Patterning of silicon oxide layers using pulsed laser ablation: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are... Agent: Solexel, Inc.

20150140722 - Backside structure and method for bsi image sensors: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region... Agent:

20150140723 - Microwave curing of multi-layer coatings: A method for providing a coated strip, which includes the steps of providing a metal or metal alloy strip, applying one or more coating layers on the metal or metal alloy strip and irradiating one or more of the applied coating layers with electromagnetic radiation, wherein one or more of... Agent:

20150140724 - Deposition of photovoltaic thin films by plasma spray deposition: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the... Agent:

20150140727 - Method for forming conductive electrode patterns and method for manufacturing solar cells comprising the same: A method for forming conductive electrode patterns of a solar cell is provided. The method includes preparing a glass substrate and forming a transparent conductive oxide film (TCO) on the glass substrate. Then, a titanium oxide (TiO2) layer and a silver (Ag) electrode are formed on the glass substrate. A... Agent:

20150140725 - Method for manufacturing an interdigitated back contact solar cell: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface... Agent: E I Du Pont De Nemours And Company

20150140726 - Method for manufacturing semiconductor device: A transparent conductive substrate (1) in which a transparent conductive film (12) is placed on a light-transmissive base plate (11) is brought into a reaction chamber of a plasma apparatus without being rinsed (Step (a)) and the transparent conductive film (12) is treated with plasma using a CH4 gas and... Agent:

20150140728 - Method for avoiding short circuit of metal circuits in oled display device: The present invention relates to a method for avoiding short circuit of metal circuit lines in an OLED display device, including the steps of: forming an inorganic layer on a substrate; forming a patterned metal layer on the inorganic layer, wherein the patterned metal layer includes more than two metal... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20150140729 - Method of patterning a base layer: A method of making a structure having a patterned a base layer and useful in the fabrication of optical and electronic devices including bioelectronic devices includes, in one embodiment, the steps of: a) providing a layer of a radiation-sensitive resin; b) exposing the layer of radiation-sensitive resin to patterned radiation... Agent:

20150140731 - Method for manufacturing semiconductor device: To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal... Agent:

20150140732 - Method for manufacturing semiconductor device: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over... Agent:

20150140733 - Method for manufacturing semiconductor device: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating... Agent:

20150140730 - Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a... Agent:

20150140734 - Semiconductor device: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose... Agent:

20150140735 - Electro/mechanical microchips and method of making with burst ultrafast laser pulses: A method for making an electromechanical chip using a plurality of transparent substrates, comprising the steps of: machining, using photoacoustic compression, full or partial voids in at least one of the plurality of substrates. The plurality of transparent substrates are stacked and arranged in a specific order. The transparent substrates... Agent: Rofin-sinar Technologies Inc.

20150140736 - Semiconductor device and method of forming wire bondable fan-out ewlb package: A semiconductor device has a first semiconductor die and a first encapsulant deposited over the first semiconductor die. An interconnect structure is formed over the first semiconductor die and first encapsulant. A modular interconnect structure including a conductive via is disposed adjacent to the first semiconductor die. The first encapsulant... Agent: Stats Chippac, Ltd.

20150140737 - Wafer level semiconductor package and manufacturing methods thereof: A semiconductor package includes at least one semiconductor die having an active surface, an interposer element having an upper surface and a lower surface, a package body, and a lower redistribution layer. The interposer element has at least one conductive via extending between the upper surface and the lower surface.... Agent:

20150140738 - Circuit connecting material and semiconductor device manufacturing method using same: Provided are a circuit connecting material able to provide good bonding with an opposing electrode, and a semiconductor device manufacturing method using the same. The present invention uses a circuit connecting material, in which a first adhesive layer to be adhered to the semiconductor chip side, and a second adhesive... Agent:

20150140739 - Discrete semiconductor device package and manufacturing method: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140,... Agent:

20150140740 - Method of fabrication, device structure and submount comprising diamond on metal substrate for thermal dissipation: A method of fabrication, a device structure and a submount comprising high thermal conductivity (HTC) diamond on a HTC metal substrate, for thermal dissipation, are disclosed. The surface roughness of the diamond layer is controlled by depositing diamond on a sacrificial substrate, such as a polished silicon wafer, having a... Agent: Advanced Diamond Technologies, Inc.

20150140741 - Fully isolated ligbt and methods for forming the same: A device includes a dielectric layer, and a heavily doped semiconductor layer over the dielectric layer. The heavily doped semiconductor layer is of a first conductivity type. A semiconductor region is over the heavily doped semiconductor layer, wherein the semiconductor region is of a second conductivity type opposite the first... Agent:

20150140742 - Methods of forming gated devices: Some embodiments include methods of forming gated devices. An upper region of a semiconductor material is patterned into a plurality of walls that extend primarily along a first direction. The walls are spaced from one another by trenches that extend primarily along the first direction. Steps are formed along bottoms... Agent:

20150140743 - Cmos with dual raised source and drain for nmos and pmos: An apparatus and a method for creating a CMOS with a dual raised source and drain for NMOS and PMOS. The spacers on both stack gates are of equal thickness. In this method, a first insulating layer is formed on the surface. The first region is then masked while the... Agent:

20150140744 - Cmos with dual raised source and drain for nmos and pmos: An apparatus and a method for creating a CMOS with a dual raised source and drain for NMOS and PMOS. The spacers on both stack gates are of equal thickness. In this method, a first insulating layer is formed on the surface. The first region is then masked while the... Agent:

20150140745 - Method of forming a high electron mobility transistor: A method of forming a high electron mobility transistor (HEMT) includes forming a second III-V compound layer on a first III-V compound layer, forming a source feature and a drain feature on the second III-V compound layer, depositing a p-type layer on a portion of the second III-V compound layer... Agent:

20150140746 - Monolithically integrated vertical jfet and schottky diode: An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride... Agent:

20150140747 - Semiconductor device including transistor and method of manufacturing the same: A semiconductor device includes a gate pattern disposed on a semiconductor substrate, a bulk epitaxial pattern disposed in a recess region formed in the semiconductor substrate at a side of the gate pattern, an insert epitaxial pattern disposed on the bulk epitaxial pattern, and a capping epitaxial pattern disposed on... Agent:

20150140748 - Integrated circuit structure to resolve deep-well plasma charging problem and method of forming the same: A method for forming an integrated circuit includes forming a deep n-well (DNW) in a substrate, and forming a PMOS transistor in the DNW. The method also includes forming an NMOS transistor in the substrate and outside the DNW, and forming a reverse-biased diode. The method further includes forming an... Agent:

20150140749 - Semiconductor device having reduced-damage active region and method of manufacturing the same: A semiconductor device according to example embodiments may include a substrate having an NMOS area and a PMOS area, isolation regions and well regions formed in the substrate, gate patterns formed on the substrate between the isolation regions, source/drain regions formed in the substrate between the gate patterns and the... Agent:

20150140750 - Process for manufacturing integrated device incorporating low-voltage components and power components: An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first... Agent: Stmicroelectronics S.r.l.

20150140751 - Modified, etch-resistant gate structure(s) facilitating circuit fabrication: Circuit fabrication methods are provided which include, for example: providing the circuit structure with at least one gate structure extending over a first region and a second region of a substrate structure, the at least one gate structure including a capping layer; and modifying an etch property of at least... Agent: Globalfoundries Inc.

20150140752 - Multiple-time programming memory cells and methods for forming the same: A method includes forming Shallow Trench Isolation (STI) regions to separate a first active region and a second active region of a semiconductor substrate from each other, etching a portion of the STI regions that contacts a sidewall of the second active region to form a recess, and implanting a... Agent:

20150140755 - Method for producing a semiconductor device with surrounding gate transistor: A method for producing a semiconductor device includes a first step of forming a fin-shaped silicon layer on a silicon substrate using a first resist and forming a first insulating film therearound; and a second step of forming a second insulating film around the fin-shaped silicon layer and etching the... Agent:

20150140753 - Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells: Some embodiments include a method of fabricating integrated structures. A metal-containing material is formed over a stack of alternating first and second levels. An opening is formed through the metal-containing material and the stack. Repeating vertically-stacked electrical components are formed along the stack at sidewalls of the opening. Some embodiments... Agent: Micron Technology, Inc.

20150140754 - Semiconductor device, method of manufacturing the same, and power module: A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on... Agent:

20150140756 - Fabrication methods facilitating integration of different device architectures: Circuit fabrication methods are provided which include, for example: providing one or more gate structures disposed over a substrate structure, the substrate structure including a first region and a second region; forming a plurality of U-shaped cavities extending into the substrate structure in the first region and the second region... Agent: Globalfoundries Inc.

20150140763 - Contact structure of semiconductor device: The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material... Agent:

20150140761 - Device isolation in finfet cmos: Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of replacement fins is formed over the retrograde doped layer, each... Agent: Renesas Electronics Corporation

20150140762 - Finfet with merge-free fins: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without... Agent:

20150140759 - Integrated circuit devices including finfets and methods of forming the same: Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first... Agent:

20150140758 - Method for fabricating finfet on germanium or group iii-v semiconductor substrate: The present invention provides a method for fabricating a FinFET on a germanium or group III-V semiconductor substrate. The process flow of the method mainly includes: forming a pattern structure for a source, a drain and a fine bar connecting the source and the drain; forming an oxide isolation layer;... Agent:

20150140760 - Method to induce strain in 3-d microfabricated structures: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic... Agent:

20150140757 - Methods of forming semiconductor devices including an embedded stressor, and related apparatuses: Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming preliminary trenches adjacent opposing sides of an active region. The method includes forming etching selection regions in portions of the active region that are exposed after forming the preliminary trenches. The method includes forming... Agent:

20150140764 - Single poly plate low on resistance extended drain metal oxide semiconductor device: A semiconductor device, in particular, an extended drain metal oxide semiconductor (ED-MOS) device, defined by a doped shallow drain implant in a drift region. For example, an extend drain n-channel metal oxide semiconductor (ED-NMOS) device is defined by an n doped shallow drain (NDD) implant in the drift region. The... Agent:

20150140765 - Method of fabricating a gate dielectric layer: A method of making a semiconductor device, the method includes forming an active region in a substrate. The method further includes forming a first gate structure over the active region, where the forming the first gate structure includes forming a first interfacial layer. An entirety of a top surface of... Agent:

20150140766 - Method of forming and structure of a non-volatile memory cell: A structure of a memory cell includes a substrate, a well, three source/drain doped regions, two bottom dielectric layers, two charge trapping layers, a blocking layer and two gates to form a storage transistor and a select transistor of the memory cell. A bottom dielectric layer and a charge trapping... Agent:

20150140767 - Process for manufacturing devices for power applications in integrated circuits: A MOS transistor for power applications is formed in a substrate of semiconductor material by a method integrated in a process for manufacturing integrated circuits which uses an STI technique for forming insulating regions. The method includes the phases of forming an insulating element on a top surface of the... Agent: Stmicroelectronics S.r.l.

20150140768 - Method of manufacturing semiconductor device: A performance of a semiconductor device is improved. A gate electrode is formed on an SOI substrate via a gate insulating film, and a laminated film including an insulating film IL2 and an insulating film IL3 on the insulating film IL2 is formed on the SOI substrate so as to... Agent:

20150140769 - Raised source/drain mos transistor and method of forming the transistor with an implant spacer and an epitaxial spacer: A raised source/drain MOS transistor is formed in a process that utilizes a first sidewall spacer when implanting a semiconductor region to form the heavily-doped source region and the heavily-doped drain region of the transistor, and a second different sidewall spacer when epitaxially growing the raised source region and the... Agent:

20150140770 - Methods for producing a tunnel field-effect transistor: A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods.... Agent:

20150140771 - Method for fabricating a bipolar transistor having self-aligned emitter contact: A method of producing a semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type... Agent:

20150140772 - Method for fabricating a bipolar transistor having self-aligned emitter contact: Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The selector device can include a first electrode, a... Agent:

20150140774 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device comprises forming a first etch stop layer over a first dielectric layer. The method also comprises forming a first trench in the first etch stop layer and the first dielectric layer. The method further comprises filling the first trench with a conductive material.... Agent:

20150140773 - Methods of forming insulative elements: Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of... Agent:

20150140776 - Memory cells and methods of forming memory cells: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first... Agent:

20150140777 - Methods of selectively doping chalcogenide materials and methods of forming semiconductor devices: Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises... Agent:

20150140775 - Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same: A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The resistive memory device includes a lower electrode, a first phase-change material layer formed over the lower electrode, a second phase-change... Agent: Sk Hynix Inc.

20150140778 - Method for manufacturing metal-insulator-metal capacitor structure: A method for manufacturing the MIM capacitor structure is provided. A first damascene electrode layer is formed in the first opening formed in a first dielectric layer. An insulating barrier layer is formed to cover the first dielectric layer and the first damascene electrode layer. A second opening and a... Agent: United Microelectronics Corporation

20150140779 - Selector device using low leakage dielectric mimcap diode: MIMCAP diodes are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP diodes can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes.... Agent:

20150140780 - Method for fabricating shallow trench isolation structure: A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer... Agent: United Microelectronics Corp.

20150140781 - Semiconductor isolation structure and method of manufacture: A method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical semiconductor devices are described.... Agent:

20150140782 - Integrated circuit assembly and method of making: An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the... Agent:

20150140783 - Wafer dicing press and method and semiconductor wafer dicing system including the same: In a wafer dicing press for reducing time and cost for wafer dicing and for evenly applying a dicing pressure to a whole wafer, a wafer dicing press includes a support unit supporting a first side of a wafer; and a pressurization device applying a pressure, by dispersing the pressure,... Agent:

20150140784 - Wafer processing method: A wafer processing method for dividing a wafer into individual devices along a plurality of crossing division lines, including a frame preparing step of preparing a frame having a plurality of crossing partitions corresponding to the division lines of the wafer, a resin covering step of spreading a resin powder... Agent:

20150140785 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device include preparing an initial substrate including an edge region and a central region in which circuit patterns are formed, forming a reforming region in the edge region of the initial substrate, grinding the initial substrate to form a substrate, and cutting the substrate... Agent:

20150140788 - Apparatus and method for producing group iii nitride semiconductor device and method for producing semiconductor wafer: The production apparatus includes a shower head electrode, a susceptor for supporting a growth substrate, a first gas supply pipe, and a second gas supply pipe. The first gas supply pipe has at least one first gas exhaust outlet and supplies an organometallic gas containing Group III metal as a... Agent:

20150140791 - Apparatus for producing metal chloride gas and method for producing metal chloride gas, and apparatus for hydride vapor phase epitaxy, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light emitting diode, method: There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a... Agent:

20150140789 - Epitaxial growth of cubic and hexagonal inn films and their alloys with aln and gan: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1−xN, AlxGa1−xN, AlxIn1−xN, or AlxInyGa1−(x+y)N... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20150140790 - Precursors for gst films in ald/cvd processes: The present invention is a process of making a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. The invention is... Agent: Air Products And Chemicals, Inc.

20150140786 - Substrate processing device and substrate processing method: Disclosed is an apparatus and method for processing substrate, which facilitates to prevent a substrate form being damaged, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber... Agent: Jusung Engineering Co., Ltd.

20150140787 - Trimming silicon fin width through oxidation and etch: Embodiments described herein generally relate to methods of forming sub-10 nm node FinFETs. Various processing steps are performed on a substrate to provide a trench defining a mandrel structure. Sidewalls of the mandrel structure and a bottom surface of the trench are oxidized and subsequently etched to reduce a width... Agent:

20150140792 - Method for depositing a group iii nitride semiconductor film: conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface... Agent:

20150140793 - Nanowire devices: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial... Agent:

20150140794 - Polycrystallization method: According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface . The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor... Agent: Japan Display Inc.

20150140795 - Method for producing semiconductor thin films on foreign substrates: The invention relates to a method by means of which the average single crystal size, in particular the diameter of the single crystals, in a semiconductor thin film applied to a foreign substrate can be increased by an order of magnitude with respect to prior methods. The method is characterized... Agent:

20150140796 - Formation of contact/via hole with self-alignment: In a method for manufacturing a semiconductor device, a substrate is provided, and a dielectric layer is formed to cover the substrate. A recess portion is formed in the dielectric layer. A spacer is formed on a side surface of the recess portion. The dielectric layer is etched through the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150140797 - 3d memory: Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a... Agent:

20150140798 - Semiconductor manufacturing method and equipment thereof: A semiconductor manufacturing equipment includes a buffer chamber, a load port, a first chamber, and a second chamber respectively connected with the buffer chamber at a different side. The semiconductor manufacturing equipment also has a third chamber in the buffer chamber, the third chamber configured for cooling a wafer, and... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150140799 - Asymmetric spacers: A semiconductor device having asymmetric spacers and steps for forming the same are disclosed. The spacers have difference capacitances, with the spacer having a higher capacitance formed over a source region of the device and the spacer having a lower capacitance formed over a drain region of the device. Embodiments... Agent:

20150140800 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and... Agent: United Microelectronics Corp.

20150140801 - Patterned photoresist to attach a carrier wafer to a silicon device wafer: Patterned photoresist is used to attach a carrier wafer to a silicon device wafer. In one example, a silicon wafer is patterned for contact bumps by applying a photoresist over a surface of the wafer and removing the photoresist in locations at which the contact bumps are to be formed.... Agent:

20150140802 - Semiconductor device and process for producing semiconductor device: A semiconductor device includes: a substrate in which a product region and scribe regions are defined; a 1st insulation film formed above the substrate; a metal film in the 1st insulation film, disposed within the scribe regions in such a manner as to surround the product region; a 2nd insulation... Agent:

20150140803 - Methods of forming semiconductor structures: Methods of forming semiconductor structures that include bodies of a semiconductor material disposed between rails of a dielectric material are disclosed. Such methods may include filling a plurality of trenches in a substrate with a dielectric material and removing portions of the substrate between the dielectric material to form a... Agent:

20150140804 - Semiconductor device and method for manufacturing the same: A semiconductor device and a method for manufacturing the same are disclosed. The semiconductor device includes adjacent storage node contact plugs having different heights, and lower-electrode bowing profiles having different heights, such that a spatial margin between the lower electrodes is assured and a bridge fail is prevented, resulting in... Agent:

20150140805 - Methods for forming an interconnect pattern on a substrate: Embodiments of methods for forming interconnect patterns on a substrate are provided herein. In some embodiments, a method for forming an interconnect pattern atop a substrate includes depositing a porous dielectric layer atop a cap layer and a plurality of spacers disposed atop the cap layer, wherein the cap layer... Agent:

20150140806 - Wafer-level die attach metallization: Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number... Agent:

20150140807 - Vias in porous substrates: A microelectronic unit can include a substrate having front and rear surfaces and active semiconductor devices therein, the substrate having a plurality of openings arranged in a symmetric or asymmetric distribution across an area of the rear surface, first and second conductive vias connected to first and second pads exposed... Agent:

20150140808 - Semiconductor device having buried bit lines and method for fabricating the same: A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.... Agent: Sk Hynix Inc.

20150140809 - Integrated circuit and interconnect, and method of fabricating same: The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes... Agent:

20150140810 - Method of forming wirings: A method of manufacturing a wiring includes sequentially forming a first insulation layer, a first layer, and a second layer on a substrate, etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a... Agent:

20150140812 - Methods for dry etching cobalt metal using fluorine radicals: Embodiments of methods for etching cobalt metal using fluorine radicals are provided herein. In some embodiments, a method of etching a cobalt layer in a substrate processing chamber includes: forming a plasma from a process gas comprising a fluorine-containing gas; and exposing the cobalt layer to fluorine radicals from the... Agent:

20150140811 - Spacer-damage-free etching: A method of patterning a semiconductor device is disclosed. A tri-layer photoresist is formed over a plurality of patterned features. The tri-layer photoresist includes a bottom layer, a middle layer disposed over the bottom layer, and a top layer disposed over the middle layer, the top layer containing a photo-sensitive... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150140813 - Methods of forming non-volatile memory devices including vertical nand strings: A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be... Agent:

20150140814 - Alkaline pretreatment for electroplating: Prior to electrodeposition, a semiconductor wafer having one or more recessed features, such as through silicon vias (TSVs), is pretreated by contacting the wafer with a pre-wetting liquid comprising a buffer (such as a borate buffer) and having a pH of between about 7 and about 13. This pre-treatment is... Agent: Lam Research Corporation

20150140815 - Via in substrate with deposited layer: An opening such as a small-diameter via is formed in a semiconductor substrate such as a monocrystalline silicon chip or wafer by a high etch rate process which leaves the opening with a rough interior surface. A smoothing layer such as a polysilicon layer is applied over the interior surfaces... Agent: Invensas Corporation

20150140816 - Pre-treatment method for plating and storage medium: Catalytic metal nanoparticles can be attached on a base. A pre-treatment method for plating includes a catalytic particle-containing film forming process of forming a catalytic particle-containing film on a surface of a substrate by supplying, onto the substrate, a catalytic particle solution which is prepared by dispersing the catalytic metal... Agent:

20150140817 - Apparatuses facilitating fluid flow into via holes, vents, and other openings communicating with surfaces of substrates of semiconductor device components: A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or the at least... Agent:

20150140820 - Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon... Agent: Wako Pure Chemical Industries, Ltd.

20150140818 - Methods and systems for chemical mechanical polish cleaning: The present disclosure provides a cleaning unit for a chemical mechanical polishing (CMP) process. The cleaning unit comprises a cleaning solution; a brush configured to scrub a wafer during the CMP process; and a spray nozzle configured to apply the cleaning solution to the wafer when the brush scrubs the... Agent:

20150140819 - Semiconductor process: A semiconductor process includes the following steps. A substrate having trenches with different sizes is provided. A first oxide layer is formed to entirely cover the substrate. A prevention layer is formed on the first oxide layer. A first filling layer is formed on the prevention layer and fills the... Agent: United Microelectronics Corp.

20150140821 - Etching method and etching apparatus: An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (CF) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined... Agent:

20150140822 - Multilayer film etching method and plasma processing apparatus: In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film... Agent: Tokyo Electron Limited

20150140823 - Silicon etching method: A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S1, providing a silicon substrate; S2, depositing a mask layer on the silicon substrate; S3, corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a... Agent:

20150140824 - Jig, manufacturing method thereof, and flip chip bonding method for chips of ultrasound probe using jig: A jig includes a wafer including an accommodation groove configured to accommodate a capacitive micromachined ultrasonic transducer (cMUT) when flip chip bonding is performed, and a separation groove formed in a bottom surface of the accommodation groove, the separation groove having a bottom surface that is spaced apart from thin... Agent: Kyungpook National University Industry-academic Cooperation Foundation

20150140825 - Method for chemical polishing and planarization: A chemical planarization process described herein can be used for planarizing a substrate without using mechanical abrasion. A developable planarization material can be applied to a substrate having a non-planar topography, such that a planar surface results. The resulting planarization layer can cover existing structures on the substrate. A top... Agent:

20150140826 - Method of forming fine patterns: A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The modifying layer is etched according to the first pattern of the photoresist layer. A treatment is performed to... Agent:

20150140827 - Methods for barrier layer removal: Implementations described herein generally relate to semiconductor manufacturing and more particularly to methods for etching a low-k dielectric barrier layer disposed on a substrate using a non-carbon based approach. In one implementation, a method for etching a barrier low-k layer is provided. The method comprises (a) exposing a surface of... Agent:

20150140828 - Etching method and plasma processing apparatus: A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline... Agent:

20150140829 - Method for semiconductor manufacturing: A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150140831 - Crack control for substrate separation: A method for separating a layer for transfer includes forming a crack guiding layer on a substrate and forming a device layer on the crack-guiding layer. The crack guiding layer is weakened by exposing the crack-guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding... Agent:

20150140830 - Method for improving quality of spalled material layers: Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling... Agent:

20150140832 - High vacuum oled deposition source and system: Sources, devices, and techniques for deposition of organic layers, such as for use in an OLED, are provided. A vaporizer may vaporize a material between cooled side walls and toward a mask having an adjustable mask opening. The mask opening may be adjusted to control the pattern of deposition of... Agent: Universal Display Corporation

20150140833 - Method of depositing a low-temperature, no-damage hdp sic-like film with high wet etch resistance: Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a... Agent:

20150140834 - Al2o3 surface nucleation preparation with remote oxygen plasma: Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware... Agent: Intermolecular Inc.

20150140835 - Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion... Agent: Hitachi Kokusai Electric Inc.

20150140836 - Methods to control sio2 etching during fluorine doping of si/sio2 interface: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of... Agent: Intermolecular, Inc.

20150140837 - Method for texturing a substrate having a large surface area: t

20150140838 - Two step deposition of high-k gate dielectric materials: Methods and apparatus for forming a dielectric layer for use as a gate dielectric are provided. A high-k layer is formed with first ALD process using a halogen-based precursor. The metal in the halogen-based precursor may be at least one of hafnium, zirconium, or titanium. The halogen in the halogen-based... Agent: Intermolecular Inc.

20150140839 - Substrate processing apparatus: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured... Agent:

  
05/14/2015 > 112 patent applications in 75 patent subcategories.

20150132862 - In-situ relaxation for improved cmos product lifetime: Methods and structures for restoring an electrical parameter of a field-effect transistor in an integrated circuit deployed in an end product. A source, a drain, and a gate electrode of a field-effect transistor are coupled with ground. A restoration voltage is applied to a well beneath the field-effect transistor while... Agent: International Business Machines Corporation

20150132863 - Plasma processing apparatus and heater temperature control method: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within... Agent: Tokyo Electron Limited

20150132864 - Manufacturing method for electroluminescent element: A method for manufacturing an electroluminescent element including: a first manufacturing step of layering on a substrate, in the following order, a first electroconductive layer, a dielectric layer in which plural contact holes are formed which pass therethrough in a direction orthogonal to the substrate, a second electroconductive layer which... Agent: Showa Denko K.k.

20150132865 - Method for forming bumps, semiconductor device and method for manufacturing same, substrate processing apparatus, and semiconductor manufacturing apparatus: A semiconductor substrate is secured by suction to a rear face of a supporting face of a substrate supporting table. In this event, the thickness of the semiconductor substrate is made fixed by planarization on the rear face, and the rear face is forcibly brought into a state free from... Agent: Fujitsu Limited

20150132867 - Semiconductor process: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a... Agent:

20150132866 - Silicon wafer coated with a passivation layer: Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.... Agent: Dow Corning Corporation

20150132868 - Method of electrically isolating leads of a lead frame strip: A lead frame strip includes a plurality of connected unit lead frames, each unit lead frame having a die paddle and a plurality of leads connected to a periphery of the unit lead frame. The lead frame strip is processed by attaching a semiconductor die to each of the die... Agent:

20150132869 - Methods of fabricating semiconductor die assemblies: Methods of fabricating multi-die assemblies including a base semiconductor die bearing a peripherally encapsulated stack of semiconductor dice of lesser lateral dimensions, the dice vertically connected by conductive elements between the dice, resulting assemblies, and semiconductor devices comprising such assemblies.... Agent:

20150132870 - Methods for producing new silicon light source and devices: The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at... Agent: Tubitak

20150132871 - Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices: An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of... Agent:

20150132872 - Device and method for the surface treatment of a substrate and method for producing an optoelectronic component: Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.... Agent:

20150132873 - Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays: Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects... Agent:

20150132874 - Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material.... Agent:

20150132875 - Mask for forming layer, forming method of layer, and manufacturing method of organic light-emitting diode (oled) display using the same: A mask for forming a layer, a method of forming a layer, and a manufacturing method of an organic light-emitting diode (OLED) display are disclosed. In one aspect, the mask includes at least one light absorption portion and at least one reflection portion that are formed in a unit region,... Agent: Samsung Display Co., Ltd.

20150132876 - Method for fabricating organic electroluminescent devices: A method of fabricating an organic electroluminescent device includes forming an organic electroluminescent layer emitting a light and a plurality of nano-sized embossing layers stacked to improve light extraction efficiency of the emitted light.... Agent: Electronics And Telecommunications Research Institute

20150132877 - Method for producing optical semiconductor device: A method for producing optical semiconductor devices includes: forming a stacked semiconductor layer on a device substrate to provide an epitaxial substrate having a size corresponding to a section arrangement; forming, on the epitaxial substrate, a mask having a pattern for a semiconductor mesa and for a trench of at... Agent: Sumitomo Electric Industries, Ltd.

20150132879 - Inkjet device, and method for manufacturing organic el device: An ink jet device includes a plurality of ink jet heads each including an ink housing unit that houses therein ink, a pressure application unit that ejects a droplet of the ink by applying pressure to the ink, and a nozzle through which the droplet of the ink is ejected,... Agent: Panasonic Corporation

20150132878 - Method for manufacturing organic el element, organic el element, organic el display panel, organic el display apparatus, and organic el light-emitting apparatus: Method for manufacturing organic EL element, including: reducing internal pressure of vacuum chamber by vacuum pump connected thereto in state where substrate with applied film formed thereon is placed in vacuum chamber, applied film having been formed by applying material of organic light-emitting layer to substrate; and purifying applied film... Agent:

20150132880 - Microelectromechanical system (mems) device and fabrication method thereof: A method for fabricating MEMS device includes providing a silicon substrate. A structural dielectric layer is formed over a first side of the silicon substrate. Structure elements are embedded in the structural dielectric layer. The structure elements include a conductive backplate disposed over the silicon substrate, having venting holes and... Agent:

20150132881 - Advanced hydrogenation of silicon solar cells: iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole... Agent:

20150132882 - Image sensors and methods of manufacturing the same: In image sensors and methods of manufacturing the same, a substrate has a photoelectric conversion area, a floating diffusion area and a recess between the photoelectric conversion area and the floating diffusion area. A plurality of photodiodes is vertically arranged inside the substrate in the photoelectric conversion area. A transfer... Agent:

20150132884 - Method of making image sensor devices: A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally,... Agent:

20150132883 - Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof: The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.... Agent: Fudan University

20150132885 - Cigs light-absorbing ink and method for preparing cigs light-absorbing layer: The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is included in a thin film solar cell. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which ultimately improves the efficiency of a solar cell... Agent:

20150132886 - Diketopyrrolopyrrole polymers and small molecules: The present invention relates to polymers, comprising a repeating unit of the formula (I), and compounds of formula (II), wherein Y, Y15, Y16 and Y17 are independently of each other a group of formula (a) characterized in that the polymers and compounds comprise silicon-containing solubilizing side chains and their use... Agent: Basf Se

20150132887 - Dithienobenzofuran polymers and small molecules for electronic application: The present invention relates to polymers comprising a repeating unit of the formula (I), and compounds of formula (VIII), or (IX), wherein Y, Y15, Y16 and Y17 are independently of each other a group of formula (I), and their use as organic semiconductor in organic electronic devices, especially in organic... Agent: Basf Se

20150132888 - Methods of forming wire interconnect structures: A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length... Agent: Kulicke And Soffa Industries, Inc.

20150132891 - Bonded stacked wafers and methods of electroplating bonded stacked wafers: A method including: providing a first wafer stack; applying a first bonding layer on the first wafer stack; providing a second wafer stack, where the second wafer stack includes vias; and applying a second bonding layer to the second wafer stack. The vias extend through the second wafer stack and... Agent:

20150132889 - Package-on-package (pop) structure including stud bulbs and method: Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is... Agent:

20150132890 - Signal transmission arrangement: A signal transmission arrangement is disclosed. A voltage converter includes a signal transmission arrangement.... Agent:

20150132893 - Fabrication method of semiconductor package: A semiconductor package is provided. The semiconductor package includes a semiconductor chip having opposite first and second surfaces; an RDL structure formed on the first surface of the semiconductor chip and having opposite third and fourth surfaces and a plurality of first conductive through holes penetrating the third and fourth... Agent:

20150132892 - Packaging methods for semiconductor devices: Methods of packaging semiconductor devices are disclosed. In one embodiment, a packaging method for semiconductor devices includes providing a workpiece including a plurality of first dies, and coupling a plurality of second dies to the plurality of first dies. The plurality of second dies and the plurality of first dies... Agent:

20150132894 - Heat spreading substrate with embedded interconnects: Heat spreading substrate with embedded interconnects. In an embodiment in accordance with the present invention, an apparatus includes a metal parallelepiped comprising a plurality of wires inside the metal parallelepiped. The plurality of wires have a different grain structure than the metal parallelepiped. The plurality of wires are electrically isolated... Agent: Invensas Corporation

20150132895 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is provided. The semiconductor device includes a cathode region of the diode, a first buffer region adjacent to the cathode region at a rear surface side of a semiconductor substrate, a collector region of the IGBT, and a second buffer region adjacent to... Agent: Toyota Jidosha Kabushiki Kaisha

20150132896 - Non-volatile memory device employing semiconductor nanoparticles: Semiconductor nanoparticles are deposited on a top surface of a first insulator layer of a substrate. A second insulator layer is deposited over the semiconductor nanoparticles and the first insulator layer. A semiconductor layer is then bonded to the second insulator layer to provide a semiconductor-on-insulator substrate, which includes a... Agent:

20150132898 - Semiconductor device with raised source/drain and replacement metal gate: In a method of fabricating a semiconductor device, a silicon-on-insulator (SOI) substrate is provided. This SOI substrate comprises a buried oxide layer and an ETSOI layer between the buried oxide layer and a surface of the SOI substrate. A dummy gate is formed on the ETSOI. At least two raised... Agent: International Business Machines Corporation

20150132897 - Semiconductor device with seg film active region:

20150132899 - Method and system for a gan vertical jfet utilizing a regrown channel: A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third III-nitride material coupled... Agent:

20150132900 - Vertical gan jfet with low gate-drain capacitance and high gate-source capacitance: An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride material of a first conductivity type, and a channel region coupled to the drift region and comprising a III-nitride material of the first conductivity type. The vertical... Agent:

20150132901 - Semiconductor device and fabricating the same: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a gate region, source and drain (S/D) regions separated by the gate region and a first fin structure in a gate region in the N-FET region. The first fin structure is formed by a first semiconductor... Agent:

20150132902 - Polysilicon design for replacement gate technology: The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.... Agent:

20150132903 - Structure and method for sram cell circuit: The present disclosure provides a static random access memory (SRAM) cell. The SRAM cell includes a first and a second pull-up devices; a first and a second pull-down devices configured with the first and second pull-up devices to form two cross-coupled inverters for data storage; and a first and second... Agent:

20150132904 - Semiconductor device and a method of manufacturing the same: A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which... Agent:

20150132905 - Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiency: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure... Agent:

20150132906 - Three dimensional semiconductor memory devices and methods of fabricating the same: A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure, charge storing patterns interposed between the semiconductor patterns and the electrode structure, and blocking insulating patterns interposed between the charge storing patterns and the electrode structure. Each of the blocking... Agent:

20150132910 - Finfet device structure and methods of making same: Embodiments of the present disclosure are a method of forming a semiconductor device and a method of forming a FinFET device. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first hardmask layer on the first... Agent:

20150132912 - Method for fabricating fin field effect transistors: A method of fabricating a Fin field effect transistor (FinFET) includes providing a substrate having a first fin and a second fin extending above a substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls. The method... Agent:

20150132908 - Method for fabricating semiconductor device: A semiconductor device and method of fabricating the device, includes forming a fin-type active pattern that projects above a field insulating layer and forming a dummy gate structure that includes an epitaxial growth prevention layer to suppress nodule formation.... Agent: Samsung Electronics Co., Ltd.

20150132909 - Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method: A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device isolation pattern covering a lower portion of the preliminary fin-type active pattern, forming a gate structure extending in a second direction and crossing over the preliminary fin-type active... Agent:

20150132911 - Selective fin-shaping process: A method of forming a fin field-effect transistor (FinFET) includes forming a plurality of fins on a substrate. The method further includes forming an oxide layer on the substrate, wherein a bottom portion of each fin of the plurality of fins is embedded in the oxide layer, and the bottom... Agent:

20150132907 - Techniques for ion implantation of non-planar field effect transistors: A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed... Agent: Varian Semiconductor Equipment Associates, Inc.

20150132913 - Mechanisms for forming semiconductor device having stable dislocation profile: Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part... Agent: Taiwan Semiconductor Manufacturing Co., Ltd

20150132914 - Methods for fabricating integrated circuits with robust gate electrode structure protection: Methods for fabricating an integrated circuit are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming a gate electrode structure overlying a semiconductor substrate. First sidewall spacers are formed adjacent to sidewalls of the gate electrode structure, and the first sidewall spacers include a nitride.... Agent: Globalfoundries, Inc.

20150132915 - Non-volatile memory devices and manufacturing methods thereof: There is provided a method of manufacturing a non-volatile memory device including: alternatively stacking a plurality of insulating layers and a plurality of conductive layers on a top surface of a substrate; forming an opening that exposes the top surface of the substrate and lateral surfaces of the insulating layers... Agent:

20150132916 - Method for fabricating capacitor: A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and... Agent: Sk Hynix Inc.

20150132917 - Local bit lines and methods of selecting the same to access memory elements in cross-point arrays: Embodiments relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement a memory architecture that includes local bit lines for accessing subsets of memory elements, such as memory elements based on third dimensional memory technology. In at least some embodiments, an integrated... Agent:

20150132918 - Integrated circuit using deep trench through silicon (dts): An embodiment radio frequency area of an integrated circuit is disclosed. The radio frequency area includes a substrate having an implant region. The substrate has a first resistance. A buried oxide layer is disposed over the substrate and an interface layer is disposed between the substrate and the buried oxide... Agent:

20150132919 - Photomask and method for forming dual sti structure by using the same: In a method for manufacturing a dual shallow trench isolation structure, a substrate is provided, and a mask layer is formed on the substrate. The mask layer is patterned by using a photomask to form at least one first hole and at least one second hole in the mask layer,... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150132920 - Fin structure for a finfet device: A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the substrate, a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material, and a second semiconductor... Agent:

20150132921 - Gap-fill methods: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer... Agent:

20150132922 - Ion reduced, ion cut-formed three-dimensional (3d) integrated circuits (ic) (3dics), and related methods and systems: Ion-reduced, ion cut-formed three-dimensional (3D) integrated circuits (IC) (3DICs) are disclosed. Related methods and systems are also disclosed. During an ion-cut process for forming a monolithic 3DIC, extra ions are implanted in the donor wafer to effectuate the ion-cut. Excess, residual implanted ions remain implanted in a top layer of... Agent:

20150132923 - Process for fabricating a heterostructure limiting the formation of defects: The invention relates to a process for fabricating a heterostructure comprising at least one thin layer and a carrier substrate made of a semiconductor, the process comprising: bonding a first substrate made of a single-crystal first material, the first substrate comprising a superficial layer made of a polycrystalline second material,... Agent:

20150132924 - Handler wafer removal: A method of removing a handler wafer. There is provided a handler wafer and a semiconductor device wafer having a plurality of semiconductor devices, the semiconductor device wafer having an active surface side and an inactive surface side. An amorphous carbon layer is applied to a surface of the handler... Agent: International Business Machines Corporation

20150132925 - Wafer processing method: A wafer processing method including a mask forming step of forming a mask for covering a region corresponding to each device on a functional layer formed on the front side of a substrate constituting a wafer, a groove forming step of spraying a fluid containing abrasive grains against the front... Agent:

20150132926 - Process for large-scale ammonothermal manufacturing of gallium nitride boules: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown... Agent:

20150132927 - Polysilicon manufacturing method that controls growth direction of polysilicon: The present invention provides a polysilicon manufacturing method that controls a growth direction of polysilicon, including the following steps: (1) forming a first buffer layer (20) on a substrate (10) through deposition; (2) applying a masking operation to form a lens-like structure (22) on a surface of the first buffer... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd

20150132928 - Patterning of nanostructures: A technique for forming nanostructures including introducing a plurality of molecular-size scale and/or nanoscale building blocks to a region near a substrate and simultaneously scanning a pattern on the substrate with an energy beam, wherein the energy beam causes a change in at least one physical property of at least... Agent: Massachusetts Institute Of Technology

20150132929 - Method for injecting dopant into substrate to be processed, and plasma doping apparatus: Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by... Agent: Tokyo Electron Limited

20150132930 - Method for manufacturing semiconductor device and annealing method: A semiconductor device manufacturing method includes: amorphizing the impurity diffusion layer formation region; doping the impurity diffusion layer formation region of the semiconductor substrate with impurities; and performing an annealing treatment including lamp annealing in which a heating lamp is used and microwave annealing in which microwaves are irradiated, on... Agent:

20150132931 - High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells: A method for thermal processing of a silicon substrate wherein first a silicon substrate is heated to an idle load temperature in the range of approximately 700° to 900° C. The silicon substrate is then heated to a temperature in the range of approximately 975° to 1200° C. in less... Agent:

20150132932 - Semiconductor device with selectively etched surface passivation: A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer... Agent: Freescale Semiconductor, Inc.

20150132933 - Iii-nitride semiconductor device fabrication: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.... Agent:

20150132934 - Methods of forming electrically conductive lines devices: A method of forming an electrically conductive buried line and an electrical contact thereto includes forming of a longitudinally elongated conductive line within a trench in substrate material. A longitudinal end part thereof within the trench is of spoon-like shape having a receptacle. The receptacle is filled with conductive material.... Agent:

20150132935 - Semiconductor device and method for fabricating the same: A semiconductor device includes a semiconductor substrate having an active region defined by an isolation layer, a gate line defining a bit line contact region in the active region and extending in one direction, and a dielectric layer covering the semiconductor substrate and the gate line formed in the semiconductor... Agent: Sk Hynix Inc.

20150132936 - Semiconductor device with self-aligned air gap and method for fabricating the same: A method for fabricating a semiconductor device includes forming a plurality of semiconductor structures over a substrate, forming an interlayer dielectric layer over the semiconductor structures, etching the interlayer dielectric layer, and defining open parts between the semiconductor structures to expose a surface of the substrate, forming sacrificial spacers on... Agent: Sk Hynix Inc.

20150132937 - Method of manufacturing semiconductor device: There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing... Agent:

20150132938 - Methods and systems for forming reliable gate stack on semiconductors: Methods are provided for the deposition of high-k gate dielectric materials which are doped with fluorine and/or nitrogen to improve the performance and reliability. The high-k dielectric materials may include at least one of hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, zirconium oxide, zirconium silicon oxide, zirconium aluminum oxide,... Agent: Intermolecular, Inc.

20150132939 - Method for depositing metal layers on germanium-containing films using metal chloride precursors: A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the Ge-containing film at a higher rate... Agent:

20150132940 - Copper-containing c4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same: The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.... Agent: Intel Corporation

20150132941 - Semiconductor die contact structure and method: A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect... Agent:

20150132943 - Method of manufacturing semiconductor device: Provided is a method of manufacturing a semiconductor device. The method includes forming isolated contact filling portions and an etch control portion, the isolated contact filling portions filling contact holes defined in a support layer and are spaced apart from each other in a first direction and a second direction... Agent:

20150132942 - Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices: Provided is a method of manufacturing a semiconductor device. The method includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word... Agent:

20150132944 - Electronic device and method for fabricating the same: An electronic device includes a semiconductor memory circuit. The semiconductor memory circuit includes a plurality of first conductive lines which includes an anti-oxidation layer on both sides of each first conductive line, an inter-layer dielectric layer suitable for gap-filling a space between the first conductive lines, a material layer formed... Agent: Sk Hynix Inc.

20150132945 - Methods of fabricating semiconductor devices including interlayer wiring structures: Semiconductor devices and methods of fabricating the same are disclosed. The methods include forming a first interlayer insulating layer and a conductive contact plug that penetrates the first interlayer insulating layer, forming a second interlayer insulating layer and a first interlayer wiring on the first interlayer insulating layer. The first... Agent:

20150132946 - Methods for barrier interface preparation of copper interconnect: A method is provided, including the following method operations: depositing a metallic barrier layer to line a copper interconnect structure by a dry process in an integrated system configured to operate a mixture of dry and wet processes; depositing the functionalization layer over the metallic barrier layer by a wet... Agent:

20150132947 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device may include: forming an opening in a dielectric layer, the opening exposing a non-conductive layer disposed over a semiconductor substrate; forming a self-assembled monolayer (SAM) within the opening and over the non-conductive layer; forming a catalytic layer within the opening and over the... Agent:

20150132948 - Method of fabricating a semiconductor device, and chemical mechanical polish tool: The present disclosure provides a method of fabricating a semiconductor device with metal interconnections and a design of a tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device, the method includes providing a semiconductor substrate, depositing a dielectric layer over the semiconductor substrate,... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150132949 - Fabrication methods of chip device packages: A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate, having a first surface and an opposing second surface. A spacer is disposed under the second surface of the semiconductor substrate and a cover plate is disposed under the spacer. A recessed portion... Agent:

20150132950 - Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same: A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of... Agent:

20150132952 - Air gap formation by damascene process: The present disclosure provides a method for forming a semiconductor device. The method includes forming first conductive layer structures in a first dielectric layer on a substrate; forming a patterned photoresist layer having portions that are each disposed over a respective one of the first conductive layer structures; forming an... Agent:

20150132951 - Surface poisoning using ald for high selectivity deposition of high aspect ratio features: Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the... Agent:

20150132953 - Etching of semiconductor structures that include titanium-based layers: Two-step process sequences uniformly etch both tungsten-based and titanium-based structures on a substrate. A sequence of wet etches using peroxide and heated nitric acid uniformly recesses a metal stack that includes W, TiN, and TiAl. W, TiN and TiC are uniformly recessed by a peroxide etch at ˜25 C followed... Agent: Intermolecular Inc.

20150132954 - Method for processing structure in manufacturing semiconductor device: A method used for processing a structure in manufacturing of a semiconductor device may include polishing the structure to form a polished structure. The polished structure may include a metal member, a dielectric layer that contacts the metal member, and a particle that contacts at least one of the metal... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150132955 - Polishing composition, polishing method using same, and method for producing substrate: A polishing composition of the present invention contains a water-soluble polymer and abrasive grains. The water-soluble polymer is an anionic compound having an acid dissociation constant pKa of 3 or less. Specific examples of such a compound include polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyethyl acrylate sulfonic acid, polybutyl acrylate... Agent: Fujimi Incorporated

20150132956 - Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry... Agent: Air Products And Chemicals, Inc.

20150132957 - Composition for advanced node front-and-back-end of line chemical mechanical polishing: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.... Agent:

20150132958 - Contact release capsule useful for chemical mechanical planarization slurry: The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a... Agent:

20150132961 - Methods for atomic layer etching: Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element and remote plasma are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to... Agent:

20150132959 - Pattern formation and transfer directly on silicon based films: Embodiments involve patterned mask formation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; exposing the CVD film to e-beam or UV radiation, forming a pattern in the CVD film; and etching the pattern in the CVD film, forming features in areas not exposed to... Agent:

20150132960 - Substrate processing apparatus and substrate processing method: A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A... Agent: Osaka University

20150132962 - Facilitating mask pattern formation: Mask pattern formation is facilitated by: providing a mask structure including at least one sacrificial spacing structure disposed above a substrate structure; disposing a spacer layer conformally over the mask structure; selectively removing the spacer layer, leaving, at least in part, sidewall spacers along sidewalls of the at least one... Agent: Globalfoundries Inc.

20150132963 - Mechanism for forming semiconductor device structure: Embodiments of mechanisms of forming a semiconductor device structure are provided. The method includes providing a substrate, forming a first material layer on the substrate, forming a second material layer on the first material layer and forming a first PR layer on the second material layer. The method includes exposing... Agent: Taiwan Semiconductor Manufacturing Co., Ltd

20150132966 - Method for forming a finfet structure: A method for forming a FinFET structure includes providing a substrate, a first region and a second region being defined on the substrate, a first fin structure and a second fin structure being disposed on the substrate within the first region and the second region respectively. A first oxide layer... Agent:

20150132965 - Method for using post-processing methods for accelerating euv lithography: Methods for using high-speed EUV resists including resists having additives that may be detrimental to etch chambers. Methods include using reversal materials and/or reversal techniques, as well as diffusion-limited etch-back and slimming for pattern creation and transfer. A substrate with high-speed EUV resist is lithographically patterned and developed into a... Agent:

20150132964 - Method of patterning: In a patterning method according to the present embodiment, a guide pattern is formed on a processing target film. The guide pattern is configured by concave portions and convex portions extending in a predetermined direction. A block copolymer layer is formed on the guide pattern. The block copolymer layer contains... Agent: Kabushiki Kaisha Toshiba

20150132968 - Dry-etch selectivity: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove... Agent:

20150132967 - Method of processing substrate and substrate processing apparatus: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having... Agent:

20150132969 - Substrate processing apparatus and substrate detaching method: A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat... Agent:

20150132970 - Substrate processing apparatus and substrate processing method: An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply... Agent: Tokyo Electron Limited

20150132971 - Plasma generation and pulsed plasma etching: One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a substrate, establishing a bias at a frequency to convert the gas to a plasma at the frequency, and using the plasma to etch the photoresist.... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150132972 - Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium: A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to... Agent: Hitachi Kokusai Electric Inc.

20150132973 - Ultraviolet curing apparatus and ultraviolet curing method thereof: An ultraviolet curing apparatus includes a chamber, a gas flow generator, and an ultraviolet lamp. The gas flow generator includes a top liner and a bottom liner coupled to each other. The top liner and the bottom liner are disposed in the chamber, and are made of low-coefficient of thermal... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

  
05/07/2015 > 81 patent applications in 58 patent subcategories.

20150125966 - Stt-mram cell structures: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a... Agent:

20150125967 - Controlling the device performance by forming a stressed backside dielectric layer: A device includes a p-type metal-oxide-semiconductor (PMOS) device and an n-type metal-oxide-semiconductor (NMOS) device at a front surface of a semiconductor substrate. A first dielectric layer is disposed on a backside of the semiconductor substrate. The first dielectric layer applies a first stress of a first stress type to the... Agent:

20150125968 - Optical system and method of use: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal... Agent:

20150125969 - Inspection method and method of manufacturing semiconductor device: First, a product to be inspected is prepared. The product to be inspected includes a substrate and a first film formed on the substrate. TDS is performed while the temperature of the product to be inspected is raised to 1,000° C. or higher, and the quality of the product to... Agent: Renesas Electronics Corporation

20150125970 - Systems and methods of automatically detecting failure patterns for semiconductor wafer fabrication processes: A system and method of automatically detecting failure patterns for a semiconductor wafer process is provided. The method includes receiving a test data set collected from testing a plurality of semiconductor wafers, forming a respective wafer map for each of the wafers, determining whether each respective wafer map comprises one... Agent:

20150125971 - Polishing apparatus and polishing method: A polishing apparatus capable of monitoring an accurate progress of polishing is disclosed. The polishing apparatus includes: a polishing table for supporting a polishing pad; a table motor configured to rotate the polishing table; a top ring configured to press a substrate against the polishing pad to polish the substrate;... Agent:

20150125972 - Method of manufacturing flexible display device: Disclosed is a flexible display device and method of manufacturing the same in which a method of manufacturing a flexible display device may include forming a sacrificial layer on a support substrate, the sacrificial layer including at least one barrier layer and a separation layer, the barrier layer having a... Agent:

20150125973 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors,... Agent:

20150125974 - Gan based led having reduced thickness and method for making the same: A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes... Agent: Manutius Ip, Inc.

20150125977 - Organic el light emitting device, manufacturing method therefor, and organic el illumination device: An organic EL light emitting device includes a transparent substrate, a transparent electrode film formed on the substrate, a positive electrode contact portion in contact with a part of the transparent electrode film and electrically connected therewith, an insulating layer formed on the transparent electrode film such that the an... Agent: Nec Lighting, Ltd.

20150125976 - Selective sidewall growth of semiconductor material: A method of producing a bulk semiconductor material comprises the steps of providing a base comprising a substantially planar substrate having a plurality of etched nano/micro-structures located thereon, each structure having an etched, substantially planar sidewall, wherein the plane of each said etched sidewall is arranged at an oblique angle... Agent:

20150125975 - Thin film encapsulation of organic light emitting diodes: A low temperature, low cost method of encapsulating organic light emitting diodes (OLED) that avoids damage to the OLED device. One method comprises forming a metal passivation layer using a plasma, UV-ozone, or wet chemical treatment, wherein the metal passivation layer serves to encapsulate and protect the OLED from moisture... Agent:

20150125978 - Method for increasing heat conductivity in systems that use high power density leds: There is provided a method for improving heat dissipation in systems that use LEDs with high power density mounted on a printed circuit board, the LEDs each being provided, on a face thereof, with a plurality of electrical contacts for connecting electrically the LEDs to conducting tracks made on the... Agent:

20150125979 - Light emitting diode and method for fabricating the same: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the... Agent:

20150125980 - Method for producing m-plane nitride-based light-emitting diode: Provided is a novel method for producing an m-plane nitride-based LED, the method making it possible to obtain an m-plane nitride-based LED reduced in forward voltage. The method comprising (i) a step of forming an active layer consisting of a nitride semiconductor over an n-type nitride semiconductor layer in which... Agent: Seoul Viosys Co., Ltd.

20150125981 - Method for separating semiconductor devices using nanoporous structure: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal... Agent: University Industry Liaison Office Of Chonnam National University

20150125982 - Method of manufacturing nitride semiconductor device: A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.... Agent:

20150125983 - Semiconductor light-emitting device and method of manufacturing the same: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that... Agent:

20150125984 - Low frequency response microphone diaphragm structures and methods for producing the same: A microphone system includes a diaphragm suspended by springs and including a sealing layer that seals passageways which, if left open, would degrade the microphone's frequency response by allowing air to pass from one side of the diaphragm to the other when the diaphragm is responding to an incident acoustic... Agent:

20150125985 - Etching fluid and production method for silicon-based substrate using same: {wherein p moieties of R1 each independently represents a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 10 carbon atoms; q moieties of M each independently represents a hydrogen atom, an alkali metal atom, an ammonium (NH4) group or a tetraalkylammonium (R24N) group (wherein R2 represents... Agent: Wako Pure Chemical Industries, Ltd.

20150125986 - Method of manufacturing solar cell: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which... Agent:

20150125987 - Method for cleaning and passivating chalcogenide layers: A method for chemically cleaning and passivating a chalcogenide layer is provided, wherein the method comprises bringing the chalcogenide layer into contact with an ammonium sulfide containing ambient, such as an ammonium sulfide liquid solution or an ammonium sulfide containing vapor. Further, a method for fabricating photovoltaic cells with a... Agent:

20150125988 - Scribing apparatus for manufacturing solar cells: A scribing apparatus for manufacturing a solar cell, and a method of manufacturing a solar cell using the same are provided. The scribing apparatus includes a stage part configured to support a substrate having at least one thin film layer, a scribing unit configured to scribe on the at least... Agent:

20150125989 - Method for preparing light-absorbing layer for cis- or cigs-based solar cells, and light-absorbing ink for cis- or cigs-based solar cells: The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is to be included in thin-film solar cells. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer, which can ultimately improve the efficiency of solar cells,... Agent:

20150125990 - Truncated pyramid structures for see-through solar cells: The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.... Agent:

20150125991 - Manufacturing method of semiconductor device: Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film... Agent:

20150125992 - Semiconductor device and method for manufacturing the same: A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of... Agent:

20150125994 - Die-to-die gap control for semiconductor structure and method: An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached... Agent:

20150125993 - Interposer, manufacturing method thereof, semiconductor package using the same, and method for fabricating the semiconductor package: An interposer having a multilayered conductive pattern portion that is constructed by repeating the direct printing on a carrier of one or more conductive pattern layers and application of one or more insulating layers between the printed conductive pattern layers is described. Also, a method for manufacturing the interposer, a... Agent:

20150125995 - Method of forming package structure: A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device... Agent:

20150125996 - Semiconductor packages and methods of manufacturing the same: A semiconductor package comprises a board including a board pad, a plurality of semiconductor chips mounted on the board, the semiconductor chips including chip pads. Bumps are disposed on the chip pads, respectively, and a wire is disposed between the chip pads and the bumps. The wire electrically connects the... Agent:

20150125997 - Method for singulating packaged integrated circuits and resulting structures: A method of packaging an integrated circuit includes forming a first integrated circuit and a second integrated circuit on a wafer, the first and second integrated circuit separated by a singulation region. The method includes covering the first and second integrated circuits with a molding compound, and sawing through the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150125998 - Metal bumps for cooling device connection: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is... Agent:

20150125999 - Apparatus and method of attaching solder ball and method of fabricating semiconductor package including solder ball: Provided are apparatuses configured to attach a solder ball, methods of attaching a solder ball, and methods of fabricating a semiconductor package including the same. An apparatus configured to attach a solder ball includes a chuck configured to receive a package substrate on which solder balls are provided; a shielding... Agent:

20150126000 - Method of manufacturing a mos type semiconductor device: A method of manufacturing a MOS type semiconductor device, includes, before forming a semiconductor functional structure including a necessary MOS gate structure on one principal surface of a silicon semiconductor substrate, in the order recited, a first step of heating the silicon semiconductor substrate in an oxygen-containing atmosphere under heat... Agent: Fuji Electric Co., Ltd.

20150126001 - Mosfets with channels on nothing and methods for forming the same: A method includes performing an epitaxy to grow a semiconductor layer, which includes a top portion over a semiconductor region. The semiconductor region is between two insulation regions that are in a substrate. The method further includes recessing the insulation regions to expose portions of sidewalls of the semiconductor region,... Agent:

20150126002 - Semiconductor device and method for manufacturing semiconductor device: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on... Agent:

20150126003 - Method for the formation of fin structures for finfet devices: A SOI substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material. An epitaxial growth of a silicon-germanium... Agent: Stmicroelectronics, Inc.

20150126004 - Method for keyhole repair in replacement metal gate integration through the use of a printable dielectric: A method of fabricating a FET device is provided that includes the following steps. A wafer is provided. At least one active area is formed in the wafer. A plurality of dummy gates is formed over the active area. Spaces between the dummy gates are filled with a dielectric gap... Agent:

20150126006 - Manufacturing method of array substrate: A manufacturing method of an array substrate includes following steps. A first photolithography process is performed to form a gate electrode on a substrate. A gate insulating layer is formed to cover the substrate and the gate electrode. A second photolithography process is performed to form a patterned semiconductor layer... Agent:

20150126005 - Photoresist composition and method of manufacturing thin film transistor substrate using the same: m

20150126007 - Methods of manufacturing three-dimensional semiconductor memory devices: Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress... Agent:

20150126010 - Band engineered semiconductor device and method for manufacturing thereof: The disclosure is related to a band engineered semiconductor device comprising a substrate and a protruding structure that is formed in a recess in the substrate. The protruding structure extends above the recess and has a buried portion and an extended portion. At least the extended portion comprises a semiconductor... Agent: Imec

20150126008 - Methods of forming stressed multilayer finfet devices with alternative channel materials: Disclosed are methods and devices that involve formation of alternating layers of different semiconductor materials in the channel region of FinFET devices. The methods involve forming such alternating layers of different semiconductor materials in a cavity formed above the substrate fin and thereafter forming a gate structure around the fin... Agent: Globalfoundries Inc.

20150126009 - U-shaped semiconductor structure: A method for forming a U-shaped semiconductor device includes growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, which are formed in a crystalline layer. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. Backfilling is formed underneath the U-shaped semiconductor material with a dielectric... Agent:

20150126011 - Nitride semiconductor device and method for manufacturing same: m

20150126012 - Semiconductor device and method for fabricating the same: A method of forming a semiconductor device includes forming a gate structure including a polysilicon gate and forming a capping spacer on a side surface of the gate structure to prevent parasitic epitaxial growth on the side surface of the polysilicon gate.... Agent:

20150126013 - Semiconductor device including air gaps and method for fabricating the same: Disclosed are a semiconductor device capable of reducing parasitic capacitance between adjacent conductive structures and a method for fabricating the same. The semiconductor device includes a plurality of bit line structures each comprising a first contact plug formed over a substrate and a bit line formed over the first contact... Agent:

20150126014 - Method for manufacturing resistive random access storage unit: A manufacturing method of a resistive random access storage unit, includes: forming a resistance layer on a first metal layer having a flat surface; forming a passivation layer on the resistance layer; performing an etching process to obtain a plurality of basic units, a basic unit comprising a first metal... Agent: Csmc Technologies Fab2 Co., Ltd.

20150126015 - Semiconductor process: A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at... Agent:

20150126016 - Methods of forming capacitors: A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of... Agent:

20150126017 - Systems and methods for ultrasonically cleaving a bonded wafer pair: Methods for the ultrasonic cleaving of bonded wafer pairs include positioning the bonded wafer pair in a wafer holder disposed in a tank containing a volume of liquid and ultrasonically agitating the volume of liquid in the tank with an ultrasonic agitator. The ultrasonic agitation of the volume of liquid... Agent:

20150126019 - Method for fabricating active matrix substrate and method for fabricating display device: A gate line is formed on a pixel region, and a plurality of wiring layers are formed on a frame region. Next, a gate insulating layer and a semiconductor material layer are formed to cover the wiring layers and the gate line. Next, a first resist is formed to cover... Agent:

20150126018 - Method for manufacturing nitride semiconductor device: The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a... Agent:

20150126020 - Method to improve reliability of replacement gate device: A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over... Agent:

20150126021 - Method of manufacturing semiconductor device and substrate processing apparatus: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less... Agent:

20150126022 - Method for forming electrode of n-type nitride semiconductor, nitride semiconductor device, and manufacturing method thereof: According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an... Agent:

20150126025 - Interface-free metal gate stack: A gate stack for a transistor is formed by a process including forming a high dielectric constant layer on a semiconductor layer. A metal layer is formed on the high dielectric constant layer. A silicon containing layer is formed over the metal layer. An oxidized layer incidentally forms during the... Agent:

20150126023 - Methods of forming gate structures with multiple work functions and the resulting products: One illustrative method disclosed herein includes removing sacrificial gate structures for NMOS and PMOS transistors to thereby define NMOS and PMOS gate cavities, forming a high-k gate insulation layer in the NMOS and PMOS gate cavities, forming a lanthanide-based material layer on the high-k gate insulation layer in the NMOS... Agent: Globalfoundries Inc.

20150126024 - Semiconductor device and method for manufacturing the same: A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such... Agent: Kabushiki Kaisha Toshiba

20150126026 - Electrical components and methods and systems of manufacturing electrical components: A method of manufacturing an electrical component includes providing a substrate, applying an insulating layer on the substrate, applying a circuit layer on the insulating layer, irradiating the insulating layer with an electron beam to transform the insulating layer, and irradiating the circuit layer with an electron beam to transform... Agent:

20150126027 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes: forming an insulating film on a substrate where a first conductive film is formed; forming a recess in the insulating film such that the first conductive film is exposed in a portion of the recess; forming a metal oxide film to cover... Agent:

20150126028 - Methods for fabricating integrated circuits using surface modification to selectively inhibit etching: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having a first exposed surface including an elemental metal material and a second exposed surface including a barrier material. The elemental metal material has... Agent: Globalfoundries, Inc

20150126029 - Dry film photoresist, manufacturing method of dry film photoresist, metal pattern forming method and electronic component: There is provided a dry film photoresist including a substrate layer constituted by a certain substrate, a resist layer disposed over the substrate layer, the resist layer including a plurality of layers, and a protective film layer disposed over the resist layer, the protective film layer protecting the resist layer.... Agent:

20150126030 - Method for via plating with seed layer: Presented herein is a method for plating comprising providing a substrate having a dielectric layer formed over a trace, and forming a via/trench opening extending through the dielectric layer, the via/trench opening exposing a surface of the trace. The method further comprises forming a seed layer in the via/trench opening... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150126031 - Article and process for selective deposition: A process for depositing a metal includes disposing an activating catalyst on a substrate; contacting the activating catalyst with a metal cation from a vapor deposition composition; contacting the substrate with a reducing anion from the vapor deposition composition; performing an oxidation-reduction reaction between the metal cation and the reducing... Agent:

20150126033 - Method for deep silicon etching using gas pulsing: Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. Techniques include using a continuous process that comprises a cyclic gas-pulsing process... Agent: Tokyo Electron Limited

20150126032 - Methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA)... Agent: Global Foundries, Inc.

20150126034 - Methods for fabricating integrated circuits including topographical features for directed self-assembly: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming etch resistant fill control topographical features that overlie a semiconductor substrate. The etch resistant fill control topographical features define an etch resistant fill control confinement well. A block copolymer is deposited... Agent: Globalfoundries, Inc.

20150126036 - Controlling etch rate drift and particles during plasma processing: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed... Agent:

20150126035 - Novel mask removal process strategy for vertical nand device: A method for removing a doped amorphous carbon mask from a semiconductor substrate is disclosed. The method comprises generating a plasma to be used in treating the substrate, wherein the plasma comprises an oxygen containing gas, a halogen containing gas, and a hydrogen containing gas; and treating the substrate by... Agent:

20150126037 - Non-ambipolar plasma ehncanced dc/vhf phasor: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the... Agent:

20150126038 - Plasma processing apparatus and method therefor: A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. An area of an upper surface of the electrostatic chuck onto which the wafer is placed via the holding sheet is... Agent:

20150126039 - Etch suppression with germanium: Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the... Agent:

20150126040 - Silicon germanium processing: Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas... Agent:

20150126041 - Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition chamber: Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition process are provided herein. In some embodiments, a method of processing a substrate having a crystalline silicon layer atop the substrate and a patterned masking layer atop the crystalline silicon layer exposing portions of the crystalline... Agent:

20150126042 - Soft landing nanolaminates for advanced patterning: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer... Agent:

20150126043 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas.... Agent: Hitachi Kokusai Electric Inc.

20150126044 - Substrate processing apparatus and substrate processing method: A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing... Agent:

20150126045 - Low temperature silicon nitride films using remote plasma cvd technology: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for... Agent:

20150126046 - Multi-cell resonator microwave surface-wave plasma apparatus: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements... Agent:

  
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