|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 09/25/2014 > 66 patent applications in 51 patent subcategories.
20140287535 - Electronic device and method for fabricating the same: An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which... Agent: Sk Hynix Inc.
20140287534 - Highly sensitive magnetic tunable heterojunction device for resistive switching: The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic field at room temperature.... Agent: Council Of Scientific & Industrial Research
20140287537 - Method of fabricating a magnetoresistive element: A method of fabricating a magnetoresistive element, the method comprising: forming a first plurality of layers without breaking a vacuum, the first plurality of layers sequentially comprising: a first nonmagnetic conductive layer; a first ferromagnetic layer comprising an amorphous structure and a first magnetization direction; a nonmagnetic tunnel barrier layer;... Agent:
20140287536 - Method of manufacturing a magnetoresistive-based device with via integration: A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding... Agent: Everspin Technologies, Inc.
20140287538 - Warp correction device and warp correction method for semiconductor element substrate: A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect... Agent: Sintokogio, Ltd.
20140287539 - Film formation apparatus and film formation method: At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater 16 is provided, and a space where an upper heater 19 is provided are made in... Agent:
20140287540 - Deposition apparatus and method of recycling solution: A deposition apparatus and a method for recycling a solution. The deposition apparatus includes a bath in which a solution used in a chemical bath deposition (CBD) method is filled, a tank in which the solution used in the CBD method is temporarily stored, and a filter unit for filtering... Agent: Samsung Sdi Co., Ltd.
20140287541 - Semiconductor chip and semiconductor device: When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality... Agent: Renesas Electronics Corporation
20140287542 - Ir sensing transistor and manufacturing method of display device including the same: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor;... Agent:
20140287543 - Organic light emitting diode display: Disclosed is an organic light emitting diode (OLED) display comprising a substrate; an organic light emitting element disposed on the substrate; an encapsulation substrate disposed on the organic light emitting element; and an adhesive layer formed on the substrate, covering the organic light emitting element, and bonding the substrate on... Agent:
20140287544 - High reliability etched-facet photonic devices: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.... Agent: Binoptics Corporation
20140287545 - High reliability etched-facet photonic devices: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.... Agent: Binoptics Corporation
20140287546 - Light-emitting device and method for manufacturing light-emitting device: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the... Agent:
20140287547 - Inhibiting propagation of surface cracks in a mems device: A microelectromechanical systems (MEMS) device (58) includes a structural layer (78) having a top surface (86). The top surface (86) includes surface regions (92, 94) that are generally parallel to one another but are offset relative to one another such that a stress concentration location (90) is formed between them.... Agent: Freescale Semiconductor, Inc.
20140287548 - Mems device with release aperture: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140287549 - Method and pre-product for producing a thermoelectric module: A method for producing a thermoelectric module with a plurality of thermoelectric leg elements, which are electrically connected in series at opposite ends, includes arranging the leg elements on an electrically conducting plate, connecting the leg elements to the electrically conducting plate, and cutting up the electrically conducting plate into... Agent: Robert Bosch Gmbh
20140287550 - Plasma enhanced thermal evaporator: The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The... Agent:
20140287551 - Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials: A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region, treating the surface region with one or more cleaning process including an aqueous solution to remove one or more contaminants and/or particulates, and forming a lower electrode layer overlying the... Agent: Stion Corporation
20140287552 - Method for processing thin film and method for manufacturing semiconductor device: A stable and minute processing method of a thin film is provided. Further, a miniaturized semiconductor device is provided. A method for processing a thin film includes the following steps: forming a film to be processed over a formation surface; forming an organic coating film over the film to be... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140287553 - Method for forming chip-on-wafer assembly: A device includes a bottom chip and an active top die bonded to the bottom chip. A dummy die is attached to the bottom chip. The dummy die is electrically insulated from the bottom chip.... Agent:
20140287554 - Method for plating a semiconductor package lead: A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of... Agent: Freescale Semiconductor, Inc.
20140287555 - Semiconductor device including semiconductor construct installed on base plate, and manufacturing method of the same: A semiconductor device includes a semiconductor construct including a semiconductor substrate and an external connection electrode provided to protrude on a surface of the semiconductor substrate, a base plate on which the semiconductor construct is installed, and a sealing layer stacked on the semiconductor substrate except for the external connection... Agent:
20140287556 - Methods of forming bump and semiconductor device with the same: Provided are methods of forming a bump and a semiconductor device with the same. The method may include providing a substrate with pads, forming a bump maker layer to cover the pads and include a resin and solder particles, thermally treating the bump maker layer to aggregate the solder particles... Agent:
20140287558 - Package including an interposer having at least one topological feature: Embodiments include but are not limited to apparatuses and systems including semiconductor packages, e.g. memory packages, having an interposer including at least one topological feature, such as a depression in a surface of the interposer, a die coupled to the surface of the interposer, and an encapsulant material formed over... Agent:
20140287557 - Semiconductor device: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on... Agent: Nichia Corporation
20140287559 - Semiconductor device and method for manufacturing same: A semiconductor device includes: an n−-type base layer; a p-type base layer formed in a part of a front surface portion of the n−-type base layer; an n+-type source layer formed in a part of a front surface portion of the p-type base layer; a gate insulating film formed on... Agent: Rohm Co., Ltd.
20140287560 - Integrated semiconductor device having an insulating structure and a manufacturing method: An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second... Agent:
20140287561 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer,... Agent: National Chiao Tung University
20140287562 - Method of fabricating a semiconductor device: There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140287563 - Method of manufacturing semiconductor device: An aspect of the present embodiment, there is provided a method of manufacturing a semiconductor device, including adsorbing a photolytic group on a hydrophilic surface of a substrate on which a concave portion is provided, irradiating a first area of the substrate with light to transform the photolytic group to... Agent: Kabushiki Kaisha Toshiba
20140287564 - Semiconductor devices having shallow junctions: Semiconductor devices are provided including a substrate having a first surface and a second surface recessed from opposite sides of the first surface, a gate pattern formed on the first surface and having a gate insulating layer and a gate electrode, a carbon-doped silicon buffer layer formed on the second... Agent: Samsung Electronics Co., Ltd.
20140287565 - Method for manufacturing semiconductor structure: The present invention provides a method for manufacturing a semiconductor structure, which comprises: a) providing a substrate (100); b) forming a dummy gate stack on the substrate (100), wherein the dummy gate stack consists of a gate dielectric layer (203) and a dummy gate (201) located on the gate dielectric... Agent:
20140287566 - Method of making a semiconductor chip including identifying marks: A semiconductor chip includes a first mark for identifying a position of the chip within an exposure field. The semiconductor chip includes a first matrix in a first layer of the chip and a second mark within the first matrix identifying a position of the exposure field on a wafer.... Agent:
20140287567 - Manufacturing method for semiconductor device: According to one embodiment, a first adhesive layer is formed on one major surface of a first substrate. The first substrate and a second substrate are adhered using a second adhesive layer that has thermosetting properties and covers the first adhesive layer, wherein a bonding strength between the second substrate... Agent: Kabushiki Kaisha Toshiba
20140287568 - Method for manufacturing semiconductor device and exposure mask used in the same method: A method for manufacturing a semiconductor device is disclosed in which the probability of occurrence of a crack is reduced and in which manufacturing cost is also reduced. An exposure mask used in the method is disclosed. Protrusion portions are formed in intersections of scribe lines in an outermost periphery... Agent: Fuji Electric Co., Ltd.
20140287570 - Method of fabricating a gallium nitride merged p-i-n schottky (mps) diode: A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled... Agent:
20140287569 - Method of manufacturing semiconductor device: According to one embodiment, a method includes forming a first SiGe layer having a first profile of a concentration of Ge on a semiconductor substrate, forming a second SiGe layer having a second profile of a concentration of Ge on the first SiGe layer, the second profile lower than a... Agent: Kabushiki Kaisha Toshiba
20140287571 - Double-active-layer structure with a polysilicon layer and a microcrystalline silicon layer, method for manufacturing the same and its application: A first amorphous silicon layer is formed over a substrate and a second amorphous silicon layer is formed over the first amorphous silicon layer. When a laser annealing process is performed, the second amorphous silicon layer absorbs more laser light than the first amorphous silicon layer does. The first amorphous... Agent:
20140287572 - Manufacturing method of mis-type semiconductor device: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.... Agent: Toyoda Gosei Co., Ltd.
20140287573 - Semiconductor device manufacturing method: A semiconductor device manufacturing method includes (a) forming a buried diffusion layer of a first conductivity type in a semiconductor substrate of a second conductivity type, (b) forming a first impurity region by implanting an impurity of the first conductivity type, (c) diffusing the buried diffusion layer and the first... Agent: Seiko Epson Corporation
20140287574 - Method of manufacturing semiconductor device having field plate electrode: According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench. An electrode material is formed to... Agent: Kabushiki Kaisha Toshiba
20140287575 - Spatial orientation of the carbon nanotubes in electrophoretic deposition process: A new method of electrophoretic nanotube deposition is proposed wherein individual nanotubes are placed on metal electrodes which have their length significantly exceeding their width, while the nanotube length is chosen to be close to that of the metal electrode. Due to electrostatic attraction of individual nanotube to the elongated... Agent:
20140287576 - Semiconductor device manufacturing method and semiconductor device: According to one embodiment, a semiconductor device manufacturing method includes: forming a film to be a first metal layer on a substrate where an element portion is formed; forming a first insulating layer provided with an opening on the film to be the first metal layer; forming a second metal... Agent: Kabushiki Kaisha Toshiba
20140287578 - Electroplating methods for fabricating integrated circuit devices and devices fabricated thereby: Provided are methods of fabricating a semiconductor device and semiconductor devices fabricated thereby. In the methods, dummy recess regions may be formed between cell recess regions and a peripheral circuit region. Due to the presence of the dummy recess regions, it may be possible to reduce a concentration gradient of... Agent:
20140287577 - Methods for producing interconnects in semiconductor devices: A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying... Agent:
20140287579 - Methods for fabricating dual damascene structures in low temperature dielectric materials: Methods for fabricating dual damascene structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include patterning a first mask layer atop a substrate disposed in a process chamber, wherein the substrate includes one or more low temperature dielectric layers to define a... Agent: Applied Materials, Inc.
20140287580 - Method for forming conductive structure, and plating apparatus and plating method: A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior... Agent:
20140287581 - Through silicon via with embedded barrier pad: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below... Agent:
20140287582 - Method of manufacturing metal silicide layer: According to one embodiment, a method of manufacturing a metal silicide layer, the method includes forming a metal layer including impurities on a silicon layer by a vapor deposition method using a gas of a metal and a gas of the impurities, and forming a metal silicide layer including the... Agent:
20140287583 - Electrically conductive paste for front electrode of solar cell and preparation method thereof: The present invention provides an electrically conductive paste for a front electrode of a solar cell and a preparation method thereof. The electrically conductive paste is composed of a corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more glass-free Pb—Te based crystalline compounds... Agent: Soltrium Technology, Ltd. Shenzhen
20140287584 - Microelectronic devices with through-silicon vias and associated methods of manufacturing: Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The... Agent: Micron Technology, Inc.
20140287585 - Ruthenium film formation method and storage medium: A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.... Agent: Tokyo Electron Limited
20140287586 - Method of manufacturing semiconductor device: According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and... Agent: Kabushiki Kaisha Toshiba
20140287588 - Deposition method and deposition apparatus: [Solving Means] A deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned. A film is caused to grow on the cleaned surface of the... Agent:
20140287587 - Method for forming fine patterns of semiconductor device using directed self-assembly process: Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing... Agent: Dongjin Semichem Co., Ltd
20140287590 - Optical waveguide structure and method of manufacture thereof: A method of manufacture of an optical waveguide structure including the steps of: providing a multilayer semiconductor wafer including a III-V semiconductor substrate, a III-V semiconductor top layer and an etch stop layer sandwiched therebetween, the etch stop layer including aluminium and phosphorous; and etching through the top layer to... Agent: U2t Photonics Uk Limited
20140287591 - Method for etching film containing cobalt and palladium: Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas... Agent: Tokyo Electron Limited
20140287593 - High throughput multi-layer stack deposition: Methods and apparatus for high rate formation of multi-layer stacks on semiconductor substrate is provided. A chamber for forming such stacks at high rates includes a first precursor line and a second precursor line. The first precursor line is coupled to a first diverter, which is coupled to a gas... Agent:
20140287592 - Methods of forming a layer: According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than... Agent:
20140287594 - Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium: A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to... Agent: Hitachi Kokusai Electric Inc.
20140287595 - Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium: A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher... Agent: Hitachi Kokusai Electric Inc.
20140287596 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a... Agent: Hitachi Kokusai Electric Inc.
20140287597 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element... Agent: Hitachi Kokusai Electric Inc.
20140287598 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas,... Agent: Hitachi Kokusai Electric Inc.
20140287599 - Substrate processing apparatus, process container, and method of manufacturing semiconductor device: Provided are a substrate processing apparatus, a process container and a method of manufacturing a semiconductor device capable of improving the quality of a thin film by stabilizing conditions of heating a substrate when the thin film is formed on the substrate heated using a heating unit installed outside the... Agent: Hitachi Kokusai Electric Inc.09/18/2014 > 259 patent applications in 140 patent subcategories.
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