|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 02/05/2015 > 75 patent applications in 60 patent subcategories.
20150037910 - Method of manufacturing organic electroluminescent element: A method of manufacturing an organic electroluminescent element including: a first manufacturing process of stacking at least a first electrode layer, a dielectric layer, and a second electrode layer on a substrate in this order, the organic electroluminescent element having a light-emitting portion that is in contact with an inner... Agent: Showa Denko K.k.
20150037911 - Substrate treatment apparatus, substrate treatment method, and non-transitory storage medium: A substrate treatment apparatus configured such that substrates in a same lot are distributed by a delivery mechanism into a plurality of unit blocks, each unit block including a solution treatment module, an ultraviolet irradiation module, and a substrate carrying mechanism, the apparatus includes: an illuminance detection part that detects... Agent:
20150037912 - Method for manufacturing transistor: A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation... Agent:
20150037913 - Millimeter wave wafer level chip scale packaging (wlcsp) device and related method: Various embodiments include wafer level chip scale package (WLCSP) structures and methods of tuning such structures. In some embodiments, the WLCSP structure includes: a printed circuit board (PCB) trace connection including at least one PCB ground connection connected with a PCB ground plane; a set of ground solder balls each... Agent:
20150037914 - Method for manufacturing tested apparatus and method for manufacturing system including tested apparatus: Disclosed herein is a method for manufacturing a tested apparatus that includes forming a stacked structure that includes a plurality of first semiconductor chips stacked over a semiconductor wafer. The semiconductor wafer comprises a plurality of second semiconductor chips that are arranged in matrix of a plurality of rows and... Agent:
20150037915 - Method and system for laser focus plane determination in a laser scribing process: In embodiments, a method of laser scribing a mask disposed over a semiconductor wafer includes determining a height of the semiconductor over which a mask layer is disposed prior to laser scribing the mask layer. In one embodiment the method includes: determining a height of the semiconductor wafer under the... Agent:
20150037916 - Local seal for encapsulation of electro-optical element on a flexible substrate: An electroluminescent display or lighting product incorporates a panel comprising a collection of distinct light-emitting elements formed on a substrate. A plurality of distinct local seals are formed over respective individual light-emitting elements or groups of light-emitting elements. Each local seal is formed by depositing a low melting temperature glass... Agent:
20150037917 - Method for manufacturing light-emitting element: In a system light-emitting device, a nitride semiconductor layer including a light-emitting layer is stacked on an optically transmissive substrate, and a reflective electrode including an Ag layer is stacked on the semiconductor layer. As annealing, a first annealing step that is a preceding step and a second annealing step... Agent:
20150037918 - Methods of fabricating light emitting diodes by masking and wet chemical etching: An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the... Agent:
20150037919 - Method of manufacturing semiconductor laser: A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming... Agent:
20150037920 - Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same: A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals;... Agent:
20150037921 - Method for manufacturing acoustic wave device: A method for manufacturing acoustic wave devices includes forming power supply lines along boundaries between chip regions on a main surface of a collective substrate on which interdigital transducer (IDT) electrodes and pad electrodes are formed; providing substantially frame-shaped first support members, each including a first opening in which one... Agent:
20150037922 - Techniques for improved imprinting of soft material on substrate using stamp including underfilling to leave a gap and pulsing stamp: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere... Agent: 1366 Technologies, Inc.
20150037923 - Methods to selectively treat portions of a surface using a self-registering mask: Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may... Agent: 1366 Technologies, Inc.
20150037924 - Methods of manufacturing light to current converter devices: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface... Agent:
20150037926 - Apparatus and methods for continuous flow synthesis of semiconductor nanowires: Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging... Agent: Us Nano LLC
20150037925 - Method of fabricating a superlattice structure: A method of fabricating a superlattice structure requires that atoms of a first III-V semiconductor compound be introduced into a vacuum chamber such that the atoms are deposited uniformly on a substrate. Atoms of at least one additional III-V compound are also introduced such that the atoms of the two... Agent:
20150037927 - Method for producing the pentanary compound semiconductor cztsse doped with sodium: A method for producing a layered stack for manufacturing a thin film solar cell having a compound semiconductor of the type Cu2ZnSn(S,Se)4 is described. The method has the steps of: providing a substrate; depositing a barrier layer consisting of a material adapted to inhibit the diffusion of alkali metals on... Agent:
20150037928 - Vapor deposition mask, method for producing vapor deposition mask device and method for producing organic semiconductor element: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method... Agent:
20150037929 - Apparatus and method for treating a substrate: Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on... Agent:
20150037935 - Array substrate for liquid crystal display and method for manufacturing the same: An array substrate for a liquid crystal display includes a substrate and first and second subpixels which are positioned on the substrate and are defined by a crossing structure of one gate line, a first data line, a second data line, a first common line, and a second common line.... Agent: Lg Display Co., Ltd.
20150037930 - Method of manufacturing a semiconductor heteroepitaxy structure: A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semiconductor oxide on a base semiconductor layer, scavenging oxygen from the layer of semiconductor oxide and recrystallizing the oxygen scavenged layer of semiconductor oxide as a semiconductor heteroepitaxy layer.... Agent: The University Of Kentucky Research Foundation
20150037931 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes forming a stack of films including a conductive film layer above a semiconductor substrate; patterning the stack of films by dry etching; and cleaning including generation of plasma in an ambient including BCl3 and controlling a bias power to a nonbiased state.... Agent: Kabushiki Kaisha Toshiba
20150037932 - Semiconductor device and manufacturing method thereof: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film... Agent:
20150037934 - Semiconductor device and manufacturing method thereof: The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the... Agent:
20150037933 - Semiconductor device and method for manufacturing the same: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a... Agent:
20150037936 - Strength of micro-bump joints: A device includes a work piece including a metal bump; and a dielectric layer having a portion directly over the metal bump. The metal bump and a surface of the portion of the dielectric layer form an interface. A metal finish is formed over and contacting the metal bump. The... Agent:
20150037937 - Semiconductor devices including electromagnetic interference shield: Provided are a semiconductor device including an EMI shield, a method of manufacturing the same, a semiconductor module including the semiconductor device, and an electronic system including the semiconductor device. The semiconductor device includes a lower semiconductor package, an upper semiconductor package, a package bump, and an EMI shield. The... Agent: Samsung Electronics Co., Ltd.
20150037938 - Packaging a semiconductor device having wires with polymerized insulator skin: A chip is attached to a substrate with wires spanning from the chip to the substrate is loaded in a heated cavity of a mold. The wire surfaces are coated with an adsorbed layer of molecules of a heterocyclic compound. A pressure chamber of the mold is loaded with a... Agent:
20150037940 - Liquid crystal display panel and method of manufacturing the same: In one embodiment, a liquid crystal display panel includes an array substrate and a counter substrate each having a display region and a peripheral region arranged adjacent to the display region. A resin layer is formed either one of the array substrate and the counter substrate. A protrusion in the... Agent: Japan Display Inc.
20150037939 - Rare-earth oxide isolated semiconductor fin: A dielectric template layer is deposited on a substrate. Line trenches are formed within the dielectric template layer by an anisotropic etch that employs a patterned mask layer. The patterned mask layer can be a patterned photoresist layer, or a patterned hard mask layer that is formed by other image... Agent:
20150037941 - Finfet contacting a conductive strap structure of a dram: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled with a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with... Agent:
20150037942 - Methods of forming memory cells, memory cells, and semiconductor devices: A memory device and method of making the memory device. Memory device may include a storage transistor at a surface of a substrate. The storage transistor comprises a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor... Agent:
20150037943 - Method of fabricating display device: A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by... Agent: Samsung Display Co., Ltd.
20150037944 - Semiconductor device and manufacturing method thereof: An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at... Agent:
20150037945 - Epitaxially forming a set of fins in a semiconductor device: Approaches for enabling epitaxial growth of silicon fins in a device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming a set of silicon fins for a FinFET device, the FinFET device comprising: a set of gate structures formed over a substrate, each... Agent: Globalfoundries Inc.
20150037946 - Semiconductor device and manufacturing method thereof: A method of manufacturing a semiconductor device is provided. The method includes providing a fin protruding upwardly from or through a surface of a substrate, forming a to-be-sacrificed dummy gate enwrapping a first portion of the fin, forming a first insulating material layer so as to at least cover an... Agent:
20150037947 - Wrap-around fin for contacting a capacitor strap of a dram: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a... Agent:
20150037948 - Methods for fabricating integrated circuits with a high-voltage mosfet: Methods for fabricating integrated circuits are disclosed. In an exemplary embodiment, a method for fabricating an integrated circuit includes forming a silicon material layer over a semiconductor substrate. The method further includes forming a capping layer over the silicon material layer and over the memory gate stack, removing the capping... Agent: Global Foundries Singapore Pte. Ltd.
20150037949 - Methods of forming semiconductor memory devices: Methods of fabricating a semiconductor device are provided. The method includes alternately stacking first material layers and second material layers on a substrate to form a stacked structure, forming a through hole penetrating the stacked structure, forming a data storage layer on a sidewall of the through hole, forming a... Agent:
20150037950 - Compact three dimensional vertical nand and method of making thereof: A NAND device has at least a 3×3 array of vertical NAND strings in which the control gate electrodes are continuous in the array and do not have an air gap or a dielectric filled trench in the array. The NAND device is formed by first forming a lower select... Agent:
20150037951 - Three-dimensional semiconductor devices and methods of fabricating the same: Three-dimensional semiconductor devices are provided. The three-dimensional semiconductor device includes a substrate, a buffer layer on the substrate. The buffer layer includes a material having an etching selectivity relative to that of the substrate. A multi-layer stack including alternating insulation patterns and conductive patterns is provided on the buffer layer... Agent:
20150037953 - Method for fabricating trench type transistor: An epitaxial layer is formed on the semiconductor substrate. A nitride doping region is then formed at a surface of the epitaxial layer. A hard mask layer is formed on the epitaxial layer. The hard mask layer comprises at least an opening. Through the opening, agate trench is etched into... Agent:
20150037952 - Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length: A metal-oxide-semiconductor transistor (MOS) and method of fabricating the same, in which the effective channel length is increased relative to the width of the gate electrode. A dummy gate electrode overlying dummy gate dielectric material is formed at the surface of the structure, with self-aligned source/drain regions, and dielectric spacers... Agent:
20150037954 - Super-junction trench mosfets with short terminations: A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough.... Agent:
20150037955 - Transistor, method of manufacturing the transistor, and electronic device including the transistor: Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first... Agent: Samsung Electronics Co., Ltd.
20150037956 - Manufacturing method of a semiconductor device: Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins,... Agent:
20150037957 - Semiconductor devices having tensile and/or compressive stress and methods of manufacturing: Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. A method of forming a semiconductor structure includes forming sidewalls and spacers adjacent to a gate stack structure, and forming a recess in the gate stack structure. The method further includes epitaxially growing... Agent:
20150037958 - Methods of making multi-state non-volatile memory cells: A semiconductor device includes a region in a semiconductor substrate having a top surface with a first charge storage layer on the top surface. A first conductive line is on the first charge storage layer. A second charge storage layer is on the top surface. A second conductive line is... Agent:
20150037959 - Bipolar multistate nonvolatile memory: Embodiments generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching capacity by using multiple layers of variable resistance layers. In one embodiment, the resistive switching element comprises at least three layers of variable resistance materials to... Agent:
20150037960 - Method of manufacturing a capacitor: A method of forming a device comprises forming a through via extending from a surface of a substrate into the substrate. The method also comprises forming a first insulating layer over the surface of the substrate. The method further comprises forming a first metallization layer in the first insulating layer,... Agent:
20150037961 - Method for fabricating semiconductor device: Provided is a method for fabricating a semiconductor device, including the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar. A doped region is formed in the substrate and below each pillar. The doped region below each trench... Agent:
20150037962 - Laminated wafer processing method: A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer... Agent:
20150037963 - Semiconductor substrate, semiconductor device, and manufacturing methods thereof: A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer... Agent:
20150037964 - Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking: A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer... Agent:
20150037965 - Fabrication of iii-nitride semiconductor device and related structures: A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.... Agent:
20150037966 - Method for producing a pattern in an integrated circuit and corresponding integrated circuit: At least one projecting block is formed in an element. The projecting block is then covered with a first cover layer so as to form a concave ridge self-aligned with the projecting block and having its concavity face towards the projecting block. A first trench is then formed in the... Agent: Stmicroelectronics (rousset) Sas
20150037967 - Controlling impurities in a wafer for an electronic circuit: Methods of processing a silicon wafer for an electronic circuit, substrates for an electronic circuit, and device manufacturing methods are disclosed. According to an embodiment the method of processing a silicon wafer comprises impregnating the silicon wafer with impurities that form one or more deep energy levels within the band... Agent:
20150037968 - Method for forming shielded gate of mosfet: A method for forming a shielded gate of a MOSFET includes steps as following: providing a semiconductor substrate having at least one trench, forming a bottom gate oxide region and a shielded gate poly region in the trench of the semiconductor substrate, forming an inter-poly oxide region on the shielded... Agent: Mosel Vitelic Inc.
20150037969 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device including: preparing a semiconductor substrate with a gate oxide layer on the top thereof; depositing a polycrystalline silicon layer on the top of the semiconductor substrate; depositing a protection layer overlying the top of the polycrystalline silicon layer; etching the protection layer and... Agent: Peking University Founder Group Co., Ltd.
20150037970 - Silicon film forming method, thin film forming method and cross-sectional shape control method: The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon... Agent:
20150037971 - Chip connection structure and method of forming: Chip connection structures and related methods of forming such structures are disclosed. In one case, an interconnect structure is disclosed, the structure including: a pillar connecting an integrated circuit chip and a substrate, the pillar including a barrier layer, a first copper layer over the barrier layer, and a first... Agent:
20150037972 - Methods and apparatuses for atomic layer cleaning of contacts and vias: Described are cleaning methods for removing contaminants from an electrical contact interface of a partially fabricated semiconductor substrate. The methods may include introducing a halogen-containing species into a processing chamber, and forming an adsorption-limited layer, which includes halogen from the halogen-containing species, atop the electrical contact interface and/or the contaminants... Agent:
20150037973 - Method for capping copper interconnect lines: A method of forming a capping layer over copper containing contacts in a dielectric layer with a liner comprising a noble metal liner around the copper containing contacts is provided. An electroless deposition is provided to deposit a deposition comprising copper on the noble metal liner and the copper containing... Agent:
20150037974 - Method of patterning platinum layer: A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at... Agent: United Microelectronics Corp.
20150037975 - Method and apparatus for forming silicon film: Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first... Agent:
20150037976 - Method of making a structure: A method of making a structure includes forming a first supporting member over a substrate, the first supporting member comprising a first material and having a first width defined along a reference plane. The method further includes forming a second supporting member over the substrate, the second supporting member having... Agent:
20150037977 - Mask and pattern forming method: According to one embodiment, a mask includes a line-and-space mask pattern. The mask has a separation portion separating a line pattern in a predetermined region within the line-and-space mask pattern. The mask also includes a connection pattern arranged in a crossing direction crossing the extending direction of the line pattern... Agent: Kabushiki Kaisha Toshiba
20150037978 - Hard mask removal method: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion... Agent: Taiwan Semiconductor Manufacturing Company Limited
20150037979 - Conformal sidewall passivation: A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features is provided. Coating providing molecules are provided. The coating providing molecules are pyrolyzed, which only produces a first set of byproducts and a second set of byproducts, wherein the first... Agent: Lam Research Corporation
20150037980 - Semiconductor devices including a capping layer and methods of forming semiconductor devices including a capping layer: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the... Agent:
20150037981 - Fast-gas switching for etching: A method for etching a layer in a plasma chamber with an inner injection zone gas feed and an outer injection zone gas feed is provided. The layer is placed in the plasma chamber. A pulsed etch gas is provided from the inner injection zone gas feed at a first... Agent:
20150037982 - Semiconductor device manufacturing method: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The... Agent: Tokyo Electron Limited
20150037983 - Optical heat source with restricted wavelengths for process heating: A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission... Agent:
20150037984 - Laser annealing apparatus and laser annealing method: A laser annealing apparatus includes: a laser beam generator for providing a stable single-pulse laser; a cyclic delay unit (300) for splitting the single-pulse laser into several pulsed lasers; an optical module for converging one or more of the pulsed lasers on a substrate (204); and a movable stage (500)... Agent:01/29/2015 > 73 patent applications in 59 patent subcategories.
20150031146 - Tool for annealing of magnetic stacks: In one embodiment of the invention, there is provided a tool for annealing a magnetic stack. The tool includes a housing defining a heating chamber; a holding mechanism to hold at least one wafer in a single line within the heating chamber, a heating mechanism to heat the at least... Agent: Magsil Corporation
20150031147 - Organic light emitting diode fabrication: A method of monitoring an OLED production process for making a production process OLED device, the production process OLED device having a layered structure comprising an anode layer and a cathode layer, said anode and cathode layers sandwiching a hole injection layer, a hole transport layer and at least one... Agent: Cambridge Display Technology Limited
20150031148 - Shadow mask for patterned deposition on substrates: A method for performing a physical vapor deposition (PVD) on a substrate is disclosed, comprising placing a substrate on a susceptor disposed below one or more PVD guns and below a plasma shield assembly having a bellows and a shadow mask coupled to a bottom side of the bellows, lowering... Agent:
20150031149 - Multi-chip package and method of manufacturing the same: A multi-chip package may include a first semiconductor chip, a second semiconductor chip, a first stud bump, a first nail head bonding bump, a second stud bump, and a first conductive wire. The first semiconductor chip may have a first bonding pad. The second semiconductor chip may be stacked on... Agent:
20150031150 - Method for producing a radiation-emitting semiconductor component: A method for producing a radiation-emitting semiconductor component is provided, comprising the following steps:—providing a growth substrate (1)—depositing a nucleation layer (2) on the growth substrate (1),—applying a structured dielectric layer (3) to the nucleation layer (2),—applying an epitaxial layer (4) by means of a FACELO process to the structured... Agent:
20150031151 - Thin film deposition apparatus, deposition method using the same, and method of manufacturing organic light-emitting display apparatus by using the apparatus: A thin film deposition apparatus, a deposition method using the same, and a method of manufacturing an organic light-emitting display apparatus by using the apparatus are provided. A thin film deposition apparatus is provided that includes a chamber containing a substrate holder on which a substrate is mounted, a plurality... Agent: Samsung Display Co., Ltd.
20150031152 - Method of manufacturing organic light-emitting display apparatus: A method of manufacturing an organic light-emitting display apparatus includes: providing an organic light emission part on a substrate; providing a first inorganic layer including a first low temperature viscosity transition (“LVT”) inorganic material on the substrate to cover the organic light emission part; and adding fluoride into the first... Agent: Samsung Display Co., Ltd.
20150031153 - Sputtering target, method of fabricating the same, and method of fabricating an organic light emitting display apparatus: A method of fabricating a sputtering target is provided. The method includes preparing a first powder material, wherein the first powder material includes tin oxide; preparing a mixture by mixing the first powder material and a second powder material, wherein the second powder material includes carbon; and fabricating the sputtering... Agent: Samsung Display Co., Ltd.
20150031154 - Liquid crystal display manufacturing method: Provided is a liquid crystal display manufacturing method that is capable of improving the aperture ratio while suppressing unevenness in the display. The present invention is a method of manufacturing a liquid crystal display provided with an array substrate including an insulating layer, a source bus line and a pixel... Agent: Sharp Kabushiki Kaisha
20150031155 - Deposition apparatus and method of manufacturing organic light emitting display apparatus by using the same: A deposition apparatus includes a stage and a deposition module. The stage holds a substrate. The deposition module faces the substrate. The stage relatively moves in a direction relative to the deposition module. The deposition module includes a first feeding unit and a first light exposure unit. The first feeding... Agent: Samsung Display Co., Ltd.
20150031156 - Donor substrate for transfer and manufacturing method of organic light emitting diode display: A donor substrate for transfer is disclosed. In some embodiments, the donor substrate for transfer includes a base layer, a light-heat conversion layer on the base layer, an intermediate layer on the light-heat conversion layer, and a transfer layer on the intermediate layer, in which the intermediate layer includes a... Agent: Samsung Display Co., Ltd.
20150031157 - Method and system for continuous atomic layer deposition: A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving... Agent:
20150031158 - Integrated circuit and manufacturing method: Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas... Agent:
20150031159 - Mems devices and methods of forming the same: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop... Agent:
20150031160 - Cmos compatible mems microphone and method for manufacturing the same: The present invention relates to a CMOS compatible MEMS microphone, comprising: an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including... Agent:
20150031161 - Inertial sensor and method of manufacturing the same: Disclosed herein an inertial sensor and a method of manufacturing the same. An inertial sensor 100 according to a preferred embodiment of the present invention is configured to include a plate-shaped membrane 110, a mass body 120 that includes an adhesive part 123 disposed under a central portion 113 of... Agent: Samsung Electro-mechanics Co., Ltd.
20150031162 - Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device: A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the... Agent:
20150031163 - Back contact paste with te enrichment and copper doping control in thin film photovoltaic devices: Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface... Agent:
20150031166 - Method of manufacturing light absorbing layer for solar cell using selenization process under element selenium vapor ambience and thermal treatment apparatus for manufacturing light absorbing layer: A method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: heating a wall of a chamber up to... Agent:
20150031165 - Photovoltaic device interconnect: Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.... Agent:
20150031164 - Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate: Vapor deposition apparatus for forming stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through the apparatus are provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus, a second sublimation compartment positioned over a second deposition area... Agent: First Solar, Inc.
20150031167 - Deposition apparatus, method of forming thin film using the deposition apparatus, and method of manufacturing organic light emitting display apparatus using the deposition apparatus: A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection... Agent: Samsung Display Co., Ltd.
20150031168 - Display panel and manufacturing method thereof: A display panel manufacturing method includes forming a gate electrode on a substrate and a gate insulator, a semiconductor layer, and an etch stop layer covering the gate electrode. A photoresist layer covering on the etch stop layer is pattern from two opposite side of the substrate by two photolithography... Agent:
20150031169 - Method for manufacturing semiconductor device: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat... Agent:
20150031170 - Method and apparatus for stacked semiconductor chips: Stacked semiconductor chips include a bonding-wire-free interconnection electrically connecting the semiconductor chips to each. An opening in an adhesion layer between the semiconductor chips may provide a path for the interconnection from a bonding pad on one semiconductor chip, along a sidewall insulation layer of the semiconductor chip, along a... Agent:
20150031171 - Methods for forming conductive elements and vias on substrates and for forming multi-chip modules: Methods of forming conductive elements on and in a substrate include forming a layer of conductive material over a surface of a substrate prior to forming a plurality of vias through the substrate from an opposing surface of the substrate to the layer of conductive material. In some embodiments, a... Agent:
20150031172 - Method for interconnection of components on a substrate: A method is described for interconnecting first, 27, and second, 22, components on a substrate, 21. The method comprises attaching said first component, 27, to said substrate, attaching said second component, 22, to said substrate, 21, said first and second components being positioned relative to each other on said substrate... Agent:
20150031173 - Copper post solder bumps on substrates: A method comprises forming semiconductor flip chip interconnects having electrical connecting pads and electrically conductive posts terminating in distal ends operatively associated with the pads. We solder bump the distal ends by injection molding, mask the posts on the pads with a mask having a plurality of through hole reservoirs... Agent: International Bushiness Machines Corporation
20150031174 - Method for manufacturing insulated gate bipolar transistor igbt: A method for manufacturing an IGBT includes: forming oxide layers on the surfaces of the front and the back of an N-type substrate; forming a buffer layer in the surface of the back of the N-type substrate; forming protection layers on the surfaces of the oxide layers; removing the protection... Agent: Peking University Founder Group Co., Ltd.
20150031175 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device, includes providing a silicon semiconductor substrate which is manufactured by a floating zone method; and performing thermal diffusion at a heat treatment temperature that is equal to or higher than 1290° C. and that is lower than a melting temperature of a silicon... Agent: Fuji Electric Co., Ltd.
20150031176 - Semiconductor device containing hemt and misfet and method of forming the same: A semiconductor structure with a MISFET and a HEMT region includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A third III-V compound layer is disposed on the second... Agent:
20150031177 - Method of cmos manufacturing utilizing multi-layer epitaxial hardmask films for improved epi profile: An integrated circuit containing PMOS transistors may be formed by forming a dual layer hard mask. A first layer of the hard mask is halogen-containing silicon nitride formed using a halogenated silane reagent. A second layer of the hard mask is silicon nitride formed on the first layer using halogen-free... Agent: Texas Instruments Incorporated
20150031178 - Method of cmos manufacturing utilizing multi-layer epitaxial hardmask films for improved gate spacer control: An integrated circuit containing PMOS transistors may be formed by forming a dual layer hard mask. A first layer of the hard mask is carbon-containing silicon nitride formed using a hydrocarbon reagent. A second layer of the hard mask is chlorine-containing silicon nitride formed on the first layer using a... Agent: Texas Instruments Incorporated
20150031179 - Method of forming a semiconductor structure including silicided and non-silicided circuit elements: A method includes providing a semiconductor structure including at least one first circuit element including a first semiconductor material and at least one second circuit element including a second semiconductor material. A dielectric layer having an intrinsic stress is formed that includes a first portion over the at least one... Agent: Globalfoundries Inc.
20150031180 - Vertical channel transistor with self-aligned gate electrode and method for fabricating the same: A method for fabricating vertical channel transistors includes forming a plurality of pillars which have laterally opposing both sidewalls, over a substrate; forming a gate dielectric layer on both sidewalls of the pillars; forming first gate electrodes which cover any one sidewalls of the pillars and shield gate electrodes which... Agent: Sk Hynix Inc.
20150031182 - Method of manufacturing a fin-like field effect transistor (finfet) device: A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed over a portion of the fin structure. The gate structure traverses the fin structure and separates a... Agent:
20150031181 - Replacement source/drain finfet fabrication: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a... Agent: Advanced Ion Beam Technology, Inc.
20150031183 - Semiconductor devices including silicide regions and methods of fabricating the same: A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the... Agent:
20150031184 - Methods of manufacturing a package: A method of manufacturing a package may include: providing a first device having a first redistribution layer (RDL) and an insulator layer disposed over the first RDL; and forming a first micro-bump line over the insulator layer of the first device. The first micro-bump line may extend laterally over a... Agent:
20150031185 - Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby: The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation... Agent: Sk Hynix Inc.
20150031186 - Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics: A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of... Agent:
20150031187 - Methods for forming a round bottom silicon trench recess for semiconductor applications: Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer... Agent: Applied Materials, Inc.
20150031188 - Method for isolating active regions in germanium-based mos device: Disclosed herein is a method for isolating active regions in a germanium-based MOS device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-SiGe layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a SiGe oxide layer on... Agent: Peking University
20150031189 - Mechanisms for cleaning substrate surface for hybrid bonding: Embodiments of mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150031190 - Process for thinning the active silicon layer of a substrate of \"silicon on insulator\" (soi) type: The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and... Agent:
20150031191 - Method of manufacturing semiconductor device: To enhance reliability in assembling a semiconductor device. There is provided a wiring substrate including a target mark, which is not provided on an extension line of a dicing region provided between a first semiconductor device region and a second semiconductor device region but is provided between the extension line... Agent: Renesas Electronics Corporation
20150031193 - Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process: A semiconductive substrate (1) is described that is suitable for realising electronic and/or optoelectronic devices of the type comprising at least one substrate (3), in particular of single crystal silicon, and an overlying layer of single crystal silicon (5). Advantageously, according to the invention, the semiconductive substrate (1) comprises at... Agent: Consiglio Nazionale Delle Ricerche
20150031192 - Substrate carrier arrangement, coating system having a substrate carrier arrangement and method for performing a coating process: A substrate carrier arrangement (10, 11) for a coating system (12) is provided, comprising a carrier (1) which comprises at least one support region (3) having a support surface (30), on which a substrate support (2) is arranged, and which support region comprises in the support surface (30) at least... Agent:
20150031194 - Method for designing antenna cell that prevents plasma induced gate dielectric damage in semiconductor integrated circuits: An antenna cell for preventing plasma enhanced gate dielectric failures, is provided. The antenna cell design utilizes a polysilicon lead as a gate for a dummy transistor. The polysilicon lead may be one of a group of parallel, nested polysilicon lead. The dummy transistor includes the gate coupled to a... Agent:
20150031195 - Method of fabricating a semiconductor device: A method of fabricating a semiconductor device may include conformally forming a gate insulating layer on a substrate having a recess, conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using an atomic layer deposition process, and forming a gate electrode on... Agent:
20150031197 - Integrated circuits with non-volatile memory and methods for manufacture: Semiconductor devices and the manufacture of such semiconductor devices are described. According to various aspects of the disclosure, a semiconductor device can include a memory region, a first logic region, and a second logic region. A select gate can be formed in the memory region of the device and a... Agent:
20150031196 - Method of adjusting a transistor gate flat band voltage with addition of al203 on nitrided silicon channel: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium... Agent:
20150031198 - Pattern forming method and method of manufacturing semiconductor device: According to one embodiment, first, a core pattern is formed above a hard mask layer that is formed above a process object. Then, a spacer film is formed above the hard mask layer. Next, the spacer film is etch-backed. Subsequently, an embedded layer is embedded between the core patterns whose... Agent: Kabushiki Kaisha Toshiba
20150031199 - Method of manufacturing a spacer for dual gate electronic memory cell and associated electronic memory cell: A method of manufacturing a spacer for an electronic memory including a substrate; a first gate structure; a stack including a plurality of layers whereof at least one of the layers is able to store electric charges, the method including depositing a spacer material layer, at least on the area... Agent:
20150031200 - Bump pad structure: An embodiment is a bump bond pad structure that comprises a substrate comprising a top layer, a reinforcement pad disposed on the top layer, an intermediate layer above the top layer, an intermediate connection pad disposed on the intermediate layer, an outer layer above the intermediate layer, and an under... Agent:
20150031201 - Trench patterning with block first sidewall image transfer: A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming... Agent:
20150031202 - Method for manufacturing semiconductor wafers: The invention relates to a method for manufacturing a semiconductor wafer including a conductive via extending from a main surface of the wafer, said the via having a shape factor greater than five, the wafer including a dielectric layer, the method including: producing, by means of deep etching, at least... Agent:
20150031203 - Method for processing a workpiece: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second... Agent:
20150031204 - Method of depositing film: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing... Agent:
20150031205 - Polishing method: Provided is a polishing method including a step of preparing a substrate having (1) silicon nitride as a stopper, and to a direction of a surface subjected to polishing from the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating... Agent: Hitachi Chemical Company, Ltd.
20150031206 - Composition for forming highly adhesive resist underlayer film: (wherein R2, R3, R5, and R6 are independently a hydrogen atom or a linear or branched hydrocarbon group having a carbon atom number of 1 to 4, R4 is a hydrogen atom or a methyl group, R7 is a linear or branched hydrocarbon group having a carbon atom number of... Agent:
20150031207 - Forming multiple gate length transistor gates using sidewall spacers: A method of fabricating multiple gate lengths simultaneously on a single chip surface. Hard masking materials which are used as spacers in a field effects transistor generation process are converted into a spacer mask to increase the line density on the chip surface. These hard masking spacers are further patterned... Agent: Applied Materials, Inc.
20150031209 - Method for forming features with sub-lithographic pitch using directed self-assembly of polymer blend: There is provided a manufacturing method of a semiconductor device including forming a first pattern of first features, according to a lithography process, in a photoresist layer disposed on a substrate, the lithography process having a minimum printable dimension and a minimum printable pitch, applying an additional layer on the... Agent: Renesas Electronics Corporation
20150031208 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom... Agent: Mitsubishi Electric Corporation
20150031211 - Intrench profile: A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the... Agent:
20150031210 - Methods of fabricating fine patterns: Methods of forming fine patterns are provided. The method includes reinforcing a hydrophobic property of a hard mask layer using a surface treatment process to form a neutral layer, forming a block co-polymer layer on the neutral layer, and phase-separating the block co-polymer layer into first domains and second domains.... Agent: Sk Hynix Inc.
20150031212 - Method for obtaining extreme selectivity of metal nitrides and metal oxides: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride.... Agent:
20150031213 - Plasma processing apparatus and plasma processing method: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective... Agent:
20150031214 - Chemical fluid processing apparatus and chemical fluid processing method: A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at... Agent:
20150031215 - Apparatus, hybrid laminated body, method and materials for temporary substrate support: A hybrid laminated body is provided that includes a light-transmitting support, a latent release layer disposed upon the light-transmitting support, a joining layer disposed upon the latent release layer, and a polyamide thermoplastic priming layer disposed upon the joining layer. The hybrid laminated body can further include a substrate to... Agent: 3m Innovative Properties Company
20150031216 - Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: There is provided a method of cleaning an inside of a process chamber, which is formed by a reaction tube and a manifold configured to support the reaction tube and installed under a heater, after forming a stacked film of oxide and nitride films on a substrate in the process... Agent: Hitachi Kokusai Electric, Inc.
20150031217 - Encapsulated nanoparticles: The present invention relates to a method for producing encapsulated nanoparticles by dispersing said nanoparticles and an encapsulating medium in a common solvent to form a first solution system and treating said first solution system with a stimulus suitable to induce simultaneous aggregation of the nanoparticles and the encapsulating medium.... Agent:
20150031218 - Film forming process and film forming apparatus: In a film forming apparatus (10), plasma-assisted ALD sequences are carried out to form a nitride film on a substrate (W) through the nitration of the silicon (Si) resulting from dichlorosilane (DCS), and then the first to fourth gas-feeding processes and plasma-feeding processes are successively carried out as plasma-assisted post-treatment.... Agent: Tokyo Electron Limited01/22/2015 > 95 patent applications in 71 patent subcategories.
20150024515 - Systems, methods, and apparatus for minimizing cross coupled wafer surface potentials: This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and... Agent:
20150024516 - Electrostatic phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating: Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material... Agent: Cree, Inc.
20150024517 - Plasma etcher chuck band: A plasma etch tool includes a wafer chuck with a chuck base and at least one functional component layer attached to the chuck base. A perimeter of the functional component layer has a polymer material permanently attached to it that extends to within 2 millimeters of a top surface of... Agent:
20150024519 - Method for producing organic electroluminescent element: A method for producing an organic electroluminescent element including: a first producing process of stacking at least a first electrode layer, a dielectric layer, and a second electrode layer on a substrate in this order, the organic electroluminescent element having a light-emitting portion that is in contact with an inner... Agent: Showa Denko K.k.
20150024518 - Method of forming a selectively adjustable gate structure: The present disclosure relates to a method of forming a gate structure that can be selectively adjusted to reduce critical-dimension (CD) variations. In some embodiments, the method is performed by forming a gate structure having a first length over a semiconductor substrate. The first length of the gate structure is... Agent:
20150024520 - Semiconductor device manufacturing method and manufacturing device: A marker which is a reference of a coordinate position defining a region of a chip that is manufactured in a semiconductor substrate is formed. A crystal defect on the semiconductor substrate is detected. The coordinate position of the detected crystal defect is detected on the basis of the marker.... Agent:
20150024521 - Plasma processing apparatus and plasma processing method: There is provided a plasma processing apparatus which compares a plurality of patterns detected using an interference light intensity pattern using a wavelength from at least one preset film of the plurality of film layers as a parameter and an intensity pattern using a wavelength of light from the other... Agent:
20150024523 - A method for producing an rfid transponder by etching: e
20150024524 - Methods for manufacturing isolated deep trench and high-voltage led chip: A method for manufacturing a deep isolation trench (221) and a method for manufacturing a high-voltage LED chip. Steps of the method for manufacturing a deep isolation trench (221) are as follows: forming a mask layer (202) on a substrate (200), and forming, in the mask layer, through etching, multiple... Agent: Enraytek Optoelectronics Co., Ltd
20150024522 - Organometal materials and process: Coating compositions are used to deposit films on electronic device substrates, which films are subjected to conditions that form an oxymetal precursor material layer on a matrix precursor material layer, and then such layers are cured to form a cured oxymetal layer disposed on a cured matrix layer.... Agent:
20150024525 - Led lighting apparatus and method for fabricating wavelength conversion member for use in the same: A method of forming a light-emitting diode (LED) lighting apparatus, including forming an LED on a printed circuit board, and forming a wavelength conversion member on the LED, the wavelength conversion member being spaced apart from the LED. Forming the wavelength conversion member includes transfer molding a wavelength conversion layer... Agent:
20150024527 - Method for producing spot-size convertor: A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and... Agent:
20150024526 - Optical device structure using gan substrates and growth structures for laser applications: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.... Agent: Soraa Laser Diode, Inc.
20150024528 - Apparatus and method for manufacturing organic light-emitting diode display: Provided are an apparatus for manufacturing an OLED display and a method of manufacturing OLED display. According to another aspect of the present invention, there is provided the method of manufacturing an OLED display which includes placing a substrate having rows and columns of pixels through on a stage, ejecting... Agent: Samsung Display Co., Ltd.
20150024529 - Display apparatus and method of manufacturing the same: A display apparatus includes a base substrate, a data line to transmit a data signal, a gate line disposed on the base substrate and insulated from the data line, and a pixel electrically connected to the gate line and/or the data line via a thin film transistor. At least one... Agent: Samsung Display Co., Ltd.
20150024530 - Method of manufacturing an oxide semiconductor device and method of manufacturing a display device having the same: Disclosed is a method of manufacturing an oxide semiconductor device, including: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an active pattern on the gate insulating layer; forming a first mask pattern on the gate insulating layer and the active pattern;... Agent: Samsung Display Co., Ltd.
20150024531 - P-type doping layers for use with light emitting devices: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V... Agent: ManutiusIPInc.
20150024532 - Electrically conductive polymers: An electrically conductive film suited to use as a transparent anode, a method of forming the film, and an electronic device comprising the film are disclosed. The device includes a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces.... Agent:
20150024533 - Method of forming a semiconductor device: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening... Agent:
20150024534 - Two degree of freedom dithering platform for mems sensor calibration: Systems and methods for two degree of freedom dithering for micro-electromechanical system (MEMS) sensor calibration are provided. In one embodiment, a method for a device comprises forming a MEMS sensor layer, the MEMS sensor layer comprising a MEMS sensor and an in-plane rotator to rotate the MEMS sensor in the... Agent:
20150024536 - Mems device and method of manufacturing a mems device: MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate and a backplate supported by the substrate. The backplate includes elongated protrusions.... Agent:
20150024535 - Semiconductor sensor device with footed lid: A semiconductor sensor device is packaged using a footed lid instead of a pre-molded lead frame. A semiconductor sensor die is attached to a first side of a lead frame. The die is then electrically connected to leads of the lead frame. A gel material is dispensed onto the sensor... Agent: Freescale Semiconductor, Inc.
20150024537 - Ultrasonic transducer, biological sensor, and method for manufacturing an ultrasonic transducer: A method for manufacturing an ultrasonic transducer includes: forming a piezoelectric element by laminating a lower electrode, a piezoelectric body, and an upper electrode on a first face of a support film; affixing a reinforcing substrate that covers the piezoelectric element to the first face of the support film; forming... Agent:
20150024538 - Vapor dispensing apparatus and method for solar panel: An apparatus includes a manifold coupled to a vapor source, the manifold having a plurality of nozzles, an inner cylinder, and an outer cylinder containing the inner cylinder with a space defined between the inner and outer cylinders. One of the inner cylinder or outer cylinder is rotatable with respect... Agent: Tsmc Solar Ltd.
20150024539 - Formulation of colloidal titanium-oxide solutions composition for coating and printing methods, and improvement of the output and lifespan of organic p-i-n/n-i-p photovoltaic cells: The invention also relates to a colloidal titanium-oxide nanoparticle solution containing a dispersion of titanium-oxide nanoparticles in a solvent or system of solvents, the viscosity of which is between 4 and 54 cP, said solution being particularly obtainable according to the method of the invention, as well as to the... Agent: Ardeje
20150024540 - Device and method for producing thin films: In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation.... Agent:
20150024541 - Method for fabricating photovoltaic cells with plated contacts: The disclosed technology relates generally to photovoltaic cells, and more particularly to photovoltaic cells with plated metal contacts. In one aspect, a method of fabricating a photovoltaic cell with a metal contact pattern on a surface of a semiconductor substrate includes locally smoothening portions of the surface of the semiconductor... Agent:
20150024542 - Segmented thin film solar cells: Use of chemical mechanical polishing (CMP) and/or pure mechanical polishing to separate sub-cells in a thin film solar cell. In one embodiment the CMP is only used to separate the active, thin film layer into sub-cells, with scribing still being used to achieve sub-cell separation in conductive layers above and... Agent: International Business Machines Corporation
20150024543 - Preparation of copper selenide nanoparticles: A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide-containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent... Agent:
20150024544 - Method for manufacturing semiconductor device: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in... Agent:
20150024547 - Emi package and method for making same: An integrated circuit structure includes a substrate, a photosensitive molding on a first side of the substrate, a via formed in the molding, and a conformable metallic layer deposited over the first side of the substrate and in the via. A through via may be formed through the substrate aligned... Agent:
20150024545 - Stacked package structure and method of manufacturing a package-on-package device: A stacked package structure is provided. The stacked package structure includes a stacked package including a lower semiconductor package, an upper semiconductor package disposed on the lower semiconductor package and spaced a predetermined distance apart from the lower semiconductor package, an inter-package connecting portion electrically connecting the lower semiconductor package... Agent:
20150024546 - System, structure, and method of manufacturing a semiconductor substrate stack: A method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system is presented. The method includes a semiconductor substrate which includes a front-face, a backside, a bulk layer, an interconnect layer that includes a plurality of inter-metal dielectric layers sandwiched between conductive layers, a contact... Agent:
20150024549 - Alignment of integrated circuit chip stack: The present disclosure relates to methods and devices for manufacturing a three-dimensional chip package. A method includes forming a linear groove on an alignment rail, attaching an alignment rod to the linear groove, forming alignment channels on a plurality of integrated circuit chips, and aligning the plurality of integrated circuit... Agent: International Business Machines Corporation
20150024548 - Computer readable medium encoded with a program for fabricating 3d integrated circuit device using interface wafer as permanent carrier: A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first... Agent: International Business Machines Corporation
20150024550 - Methods for producing semiconductor devices: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side... Agent:
20150024551 - Semiconductor chip bonding apparatus and method of forming semiconductor device using the same: A method of manufacturing a semiconductor device includes: providing a first substrate that includes internal wiring, the first substrate including an array of chip mounting regions that includes a first chip mounting region; placing the first substrate on a first carrier line; providing a first semiconductor chip; placing the first... Agent:
20150024552 - Substrate, chip package and method for manufacturing substrate: A substrate includes a first wiring substrate, a second wiring substrate, and an adhesive sheet. The first wiring substrate includes a number of first connecting pads and a first penetrating room. The second wiring substrate includes a number of second connecting pads. The adhesive sheet includes a number of through... Agent: Zhen Ding Technology Co., Ltd.
20150024553 - Power module package: An integrated power module includes a substantially planar insulated metal substrate having at least one cut-out region; at least one substantially planar ceramic substrate disposed within the cut-out region, wherein the ceramic substrate is framed on at least two sides by the insulated metal substrate, the ceramic substrate including a... Agent:
20150024554 - Chip to package interface: In accordance with an embodiment of the present invention, a semiconductor package includes a semiconductor chip disposed within an encapsulant, and a first coil disposed in the semiconductor chip. A dielectric layer is disposed above the encapsulant and the semiconductor chip. A second coil is disposed above the dielectric layer.... Agent:
20150024555 - Semiconductor device, electronic device, and semiconductor device manufacturing method: A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder... Agent: Fujitsu Limited
20150024556 - Method for manufacturing semiconductor device: A semiconductor device includes an input electrode provided on a front surface of a semiconductor substrate of a first conductivity type and an output electrode provided on a rear surface of the semiconductor substrate. The device has reduced deterioration of electrical characteristics when manufactured by a method including introducing impurities... Agent: Fuji Electric Co., Ltd.
20150024558 - Asymmetrical replacement metal gate field effect transistor: An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator... Agent: International Business Machines Corporation
20150024557 - Semiconductor device having local buried oxide: There is set forth herein a semiconductor device fabricated on a bulk wafer having a local buried oxide region underneath a channel region of a MOSFET. In one embodiment the local buried oxide region can be self-aligned to a gate, and a source/drain region can be formed in a bulk... Agent:
20150024559 - System and method for integrated circuits with cylindrical gate structures: A system and method for integrated circuits with surrounding gate structures are disclosed. The integrated circuits system includes a transistor having a gate all around cylindrical (GAAC) nanowire channel with an interposed dielectric layer. The cylindrical nanowire channel being in a middle section of a semiconductor wire pattern connects the... Agent:
20150024560 - Gate encapsulation achieved by single-step deposition: When forming spacer structures enclosing a gate electrode structure of a transistor, a common problem is given by the thickness variation of the spacer structure obtained as a result of a first deposition process performed in a first chamber and a second, subsequent process performed in a second chamber. The... Agent:
20150024561 - Method for fabricating a finfet in a large scale integrated circuit: Systems and methods of fabricating a FinFET in large scale integrated circuit are disclosed. One illustrative method relates to a dummy gate process, wherein the fin structure is only formed in the gate electrode region by performing a photolithography process and an etching of a first dummy gate on a... Agent:
20150024562 - Method of forming semiconductor structure: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed... Agent:
20150024563 - Semiconductor device, method of manufacturing the semiconductor device, and electronic device: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film.... Agent:
20150024564 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device, includes forming a first gate oxide film in each of a first region and a second region by thermally oxidizing a silicon substrate, forming a CVD oxide film on the first gate oxide film, implanting fluorine into each of the first region and... Agent:
20150024566 - Finlike structures and methods of making same: Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously... Agent:
20150024565 - Method of forming semiconductor device having embedded strain-inducing pattern: A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides... Agent:
20150024567 - Defect reduction for formation of epitaxial layer in source and drain regions: The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth. The mechanisms include controlled... Agent:
20150024568 - Spacer replacement for replacement metal gate semiconductor devices: A method comprising steps of removing a first dielectric material, including a hard mask layer and one or more spacer material layers, from a semiconductor device having a sacrificial gate whose sidewalls being covered by said spacer material layers, and a raised source and a raised drain region with both,... Agent:
20150024569 - Integrated circuits and methods of forming integrated circuits: A method of forming an integrated circuit includes forming a gate electrode over a substrate, forming a recess in the substrate and adjacent to the gate electrode, forming a diffusion barrier structure in the recess, forming an N-type doped silicon-containing structure over the diffusion barrier structure and thermally annealing the... Agent:
20150024570 - Scaling of bipolar transistors: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor;... Agent:
20150024571 - Resistive memory device and fabrication method thereof: A resistive memory device capable of implementing a multi-level cell (MLC) and a fabrication method thereof are provided. The resistive memory device includes a lower electrode connected to a switching device and including a first node and a second node formed on a top thereof to be spaced at a... Agent:
20150024572 - Process for faciltiating fin isolation schemes: Semiconductor fabrication methods are provided which include facilitating fabricating semiconductor fin structures by: providing a wafer with at least one fin extending above a substrate, the at least one fin including a first layer disposed above a second layer; mechanically stabilizing the first layer; removing at least a portion of... Agent:
20150024573 - Methods of forming replacement fins for a finfet semiconductor device by performing a replacement growth process: Various methods are disclosed herein for forming alternative fin materials that are in a stable or metastable condition. In one case, a stable replacement fin is grown to a height that is greater than an unconfined stable critical thickness of the replacement fin material and it has a defect density... Agent: Globalfoundries Inc.
20150024574 - Temporary bonding adhesive compositions and methods of manufacturing a semiconductor device using the same: A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane.... Agent:
20150024575 - Wafer alignment methods in die sawing process: A method includes forming a molding compound molding a lower portion of an electrical connector of a wafer therein. The molding compound is at a front surface of the wafer. The molding compound covers a center region of the wafer, and leaves an edge ring of the wafer not covered.... Agent:
20150024576 - Dicing sheet with protective film-forming layer, and method for producing chip: A dicing sheet with a protective film-forming layer includes a protective film-forming layer on an adhesive layer of an adhesive sheet with a peel strength adjusting layer being interposed therebetween. The adhesive sheet is composed of a base film and the adhesive layer. The dicing sheet with a protective film-forming... Agent:
20150024577 - Semiconductor device and method for manufacturing semiconductor device: A manufacturing method of a semiconductor device in which the threshold is corrected is provided. In a semiconductor device including a plurality of transistors each includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode... Agent:
20150024580 - Method for implant productivity enhancement: A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber... Agent:
20150024579 - Method of improving ion beam quality in an implant system: m
20150024578 - Methods for etching dielectric materials in the fabrication of integrated circuits: Methods for etching dielectric materials in the fabrication of integrated circuits are disclosed herein. In one exemplary embodiment, a method for fabricating an integrated circuit includes forming a layer of a first dielectric material over a gate electrode structure formed on a semiconductor substrate. The gate electrode structure includes a... Agent:
20150024581 - Method for manufacturing a semiconductor device: A method for manufacturing a semiconductor device in which an electrode structure is formed on a silicon carbide semiconductor substrate, includes forming a Schottky layer including a metal selected from the group titanium, tungsten, molybdenum, and chrome on a front surface of the silicon carbide semiconductor substrate; heating the Schottky... Agent: Fuji Electric Co., Ltd.
20150024582 - Method of making a gas distribution member for a plasma processing chamber: A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing... Agent:
20150024583 - Method of manufacturing liquid crystal display: A method of manufacturing a liquid crystal display includes disposing a gate electrode and a light blocking member on a substrate, disposing a source electrode and a drain electrode on the gate electrode to form a thin film transistor, disposing a data line on the light blocking member, disposing an... Agent: Samsung Display Co., Ltd.
20150024584 - Methods for forming integrated circuits with reduced replacement metal gate height variability: Methods for fabricating integrated circuits with reduced replacement metal gate height variability are provided. In an embodiment, a method includes providing a semiconductor substrate with a fin supported thereon and forming a conformal material layer overlying the fin and the semiconductor substrate. A trench is etched within the conformal material... Agent:
20150024585 - Systems and methods for fabricating gate structures for semiconductor devices: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.... Agent: Globalfoundries Inc.
20150024586 - Method for producing a monocrystalline metal/semiconductor compound: In the method for producing a monocrystalline metal-semiconductor compound on the surface of a semiconducting functional layer, initially a supply layer comprising the metal is applied to the functional layer. Thereafter, the reaction between the metal and the functional layer is triggered by way of annealing. The supply layer ends... Agent:
20150024587 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device is provided. An etch-target layer is formed on a substrate. A photoresist layer is formed on the etch-target layer. A first exposure process is performed using a first photo mask to form a plurality of first-irradiated patterns in the photoresist layer. The first... Agent:
20150024588 - Hard mask removal scheme: A method includes forming a barrier layer in a via hole and over a hard mask layer. The hard mask layer is disposed over a dielectric layer. The via hole is located through the dielectric layer and the hard mask layer. A filler layer is formed in the via hole... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150024589 - Method for assembling a microelectronic chip element on a wire element, and installation enabling assembly to be performed: Method for assembling includes: providing a system to transfer wire element from wire element supply device to wire element storage device; stretching wire element between supply and storage devices by tensioning; providing an individualized reservoir and separated chip elements, each including a connection terminal including a top with free access... Agent:
20150024591 - On-chip rf shields with backside redistribution lines: Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a... Agent:
20150024590 - Removing conductive material to form conductive features in a substrate: Apparatuses having, and methods for forming, conductive features are described. A hole is formed in a substrate and a conductive material is deposited in the hole. A part of the conductive material that occupies a first lengthwise portion of the hole is removed, and a conductive feature that occupies a... Agent:
20150024592 - Void free tungsten fill in different sized features: Methods of depositing tungsten in different sized features on a substrate are provided herein. The methods involve depositing a first bulk layer of tungsten in the features, etching the deposited tungsten, depositing a second bulk tungsten, which is interrupted to treat the tungsten after the smaller features are completely filled,... Agent:
20150024593 - Semiconductor device comprising capacitive element: A semiconductor device production method includes forming a transition metal film, irradiating a surface of the transition metal film with a mono-silane gas to form a silicon-containing transition metal film, and oxidizing the silicon-containing transition metal film by an oxygen plasma treatment, thereby forming a transition metal silicate film.... Agent:
20150024594 - Cooled pin lifter paddle for semiconductor substrate processing apparatus: A semiconductor substrate processing apparatus includes a cooled pin lifter paddle for raising and lowering a semiconductor substrate. The semiconductor substrate processing apparatus comprises a processing chamber in which the semiconductor substrate is processed, a heated pedestal for supporting the semiconductor substrate in the processing chamber, and the cooled pin... Agent: Lam Research Corporation
20150024596 - Abrasive, abrasive set, and method for abrading substrate: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.... Agent:
20150024595 - Compositions and methods for cmp of silicon oxide, silicon nitride, and polysilicon materials: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a... Agent:
20150024598 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first... Agent:
20150024597 - Method for sidewall spacer line doubling using polymer brush material as a sacrificial layer: A method for sidewall spacer line doubling uses sacrificial sidewall spacers. A mandrel layer is deposited on a substrate and patterned into mandrel stripes with a pitch double that of the desired final line pitch. A functionalized polymer is deposited over the mandrel stripes and into the gaps between the... Agent: Hgst Netherlands B.v.
20150024599 - Plasma processing apparatus and plasma processing method: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce... Agent:
20150024600 - Systems and methods to mitigate nitride precipitates: A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.... Agent:
20150024601 - Method of manufacturing si-based high-mobility group iii-v/ge channel cmos: A method can include: growing a Ge layer on a Si substrate; growing a low-temperature nucleation GaAs layer, a high-temperature GaAs layer, a semi-insulating InGaP layer and a GaAs cap layer sequentially on the Ge layer after a first annealing, forming a sample; polishing the sample's GaAs cap layer, and... Agent: Institute Of Semiconductors, Chinese Academy Of Sciences
20150024602 - Method for positioning spacers in pitch multiplication: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are... Agent:
20150024603 - Plasma etching method and plasma etching apparatus: In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O2, CF4 and HBr is used as an etching gas,... Agent: Tokyo Electron Limited
20150024604 - Method of etching a silicon substrate: A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in plasma, the method including introducing a rare gas into a reaction system to ionize the rare gas.... Agent:
20150024605 - Substrate processing method: A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on... Agent:
20150024606 - Method and system for thinning wafer thereof: Embodiments of a method for thinning a wafer are provided. The method includes placing a wafer on a support assembly and securing an etching mask to a backside of the wafer. The etching mask covers a peripheral portion of the wafer. The method further includes performing a wet etching process... Agent:
20150024607 - Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent: Organoaluminum coating compositions are used to deposit films on various substrates, which films are subsequently cured to form oxide films useful in a variety of manufacturing applications, particularly where a gas barrier may be used.... Agent:
20150024608 - Organoaminodisilane precursors and methods for depositing films comprising same: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or... Agent: Air Products And Chemicals, Inc.
20150024609 - Semiconductor reaction chamber with plasma capabilities: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method... Agent: AsmIPHolding B.v.01/15/2015 > 77 patent applications in 62 patent subcategories.
20150017743 - Memory devices and methods of fabricating the same: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit... Agent:
20150017742 - Methods for manufacturing a data storage device: Methods for manufacturing a data storage device are provided. A method may include forming an interlayer dielectric layer on a substrate, patterning the interlayer dielectric layer in a peripheral region of the substrate to form first trenches, forming first bit lines in the first trenches, patterning the interlayer dielectric layer... Agent:
20150017741 - Plasma etching method: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film... Agent: Hitachi High-technologies Corporation
20150017744 - Method of removing particles from a display panel and apparatus for performing the same: A method of removing particles from a display panel is disclosed. In one aspect, the method includes charging the particles and applying an electric field to the charged particles to capture the charged particles. Organic particles and inorganic particles may be forcibly charged to capture the organic and inorganic particles... Agent: Samsung Display Co., Ltd.
20150017745 - Polishing method and polishing apparatus: A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion... Agent:
20150017746 - Methods of forming a semiconductor device: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on... Agent:
20150017747 - Method for forming a solar cell with a selective emitter: A method for producing a solar cell with a selective emitter is disclosed. A semiconductor substrate (1) is provided. A layer (3) of dopant source material with a dopant type opposite to the dopant type of the substrate (1) is formed at a surface of the substrate (1). By applying... Agent:
20150017748 - Apparatus and method for manufacturing led package: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state... Agent: Samsung Electronics Co., Ltd.
20150017749 - Flexible packaging substrate and fabricating method thereof and packaging method for oled using the same: Provided herein is a flexible packaging substrate, comprising a first polymer layer; a metal foil layer disposed on the first polymer layer; a second polymer layer disposed on the metal foil layer; and wherein the surface area of the metal foil layer is larger than those of both the first... Agent: Everdisplay Optronics (shanghai) Limited
20150017750 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second... Agent:
20150017751 - Method for manufacturing semiconductor device: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is... Agent:
20150017752 - Method of manufacturing organic light-emitting diode (oled) display: A method of manufacturing an organic light-emitting diode (OLED) display is disclosed. In one aspect, the method includes forming a color filter on a thin film transistor substrate, forming an organic planarization layer on the color filter, and performing a vacuum heat-treatment on the color filter and organic planarization layer.... Agent: Samsung Display Co., Ltd.
20150017753 - Thin film deposition apparatus and manufacturing method of organic light emitting diode display using the same: The example embodiments provide a thin film deposition apparatus for deposition of an organic material having a low volatility characteristic, and a method for manufacturing an OLED display using the same. A thin film deposition apparatus includes a crucible assembly evaporating an organic material toward a substrate, and a pattern... Agent: Samsung Display Co., Ltd.
20150017754 - Composition for forming n-type diffusion layer, method for producing semiconductor substrate having n-type diffusion layer, and method for producing solar cell element: The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element.... Agent:
20150017755 - Method for fabricating cu-in-ga-se film solar cell: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing... Agent:
20150017756 - Apparatus and method for producing cigs absorber layer in solar cells: A method of forming an absorber layer of a solar cell includes forming a plurality of precursor layers over a surface of a bottom electrode of a solar cell substrate. The step of forming includes depositing a first layer comprising selenium and copper and at least one of gallium or... Agent:
20150017757 - Apparatus and methods for forming thin film solar cell materials: A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage... Agent:
20150017758 - Systems, methods, and media for laser deposition: In accordance with some embodiments of the disclosed subject matter, mechanisms for pulsed laser deposition are provided. In some embodiments, a system for pulsed laser deposition is provided, the system comprising: a pulsed laser configured to project a pulsed laser beam at a rotating target material and cause metal clusters... Agent:
20150017760 - Method for manufacturing molecular memory device: According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the... Agent: Kabushiki Kaisha Toshiba
20150017759 - Method for producing multiple-surface imposition vapor deposition mask, multiple-surface imposition vapor deposition mask obtained therefrom, and method for producing organic semiconductor element: A method for producing a multiple-surface imposition vapor deposition mask enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a... Agent:
20150017762 - Display device and method for manufacturing the same: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which... Agent:
20150017761 - Method for fabricating thin-film transistor: A method for fabricating a thin-film transistor is described. A structure is provided, including a substrate transmitting an excimer laser light, a diffusion prevention film on the substrate, a gate electrode and a gate insulating film on the diffusion prevention film, and an oxide semiconductor layer on the gate insulating... Agent:
20150017764 - Method of forming a semiconductor package: A method of forming a semiconductor package includes forming an interconnecting structure on an adhesive layer, wherein the adhesive layer is on a carrier. The method further includes placing a semiconductor die on a surface of the interconnecting structure. The method further includes placing a package structure on the surface... Agent:
20150017763 - Microelectronic assembly with thermally and electrically conductive underfill: A microelectronic assembly may include a microelectronic element having a surface and a plurality of contacts at the surface; a first element consisting essentially of at least one of semiconductor or dielectric material, the first element having a surface facing the surface of the microelectronic element and a plurality of... Agent: Invensas Corporation
20150017765 - Method for package-on-package assembly with wire bonds to encapsulation surface: A microelectronic assembly (10) includes a substrate (12) having a first and second opposed surfaces. A microelectronic element (22) overlies the first surface and first electrically conductive elements (28) can be exposed at at least one of the first surface or second surfaces. Some of the first conductive elements (28)... Agent: Invensas Corporation
20150017766 - Electronic device and method of manufacturing semiconductor device: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is... Agent: Sony Corporation
20150017767 - Method for producing a semiconductor device having sgts: In a method for producing a semiconductor device, Si pillars that include i-layers, N+ regions that serve as lower impurity regions, N+ regions and a P+ region that serve as upper impurity regions, and i-layers are formed by using SiO2 layers as an etching mask. Thus, surrounding gate MOS transistors... Agent:
20150017768 - Semiconductor device and method of forming the same: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions,... Agent:
20150017770 - 3-d non-volatile memory device and method of manufacturing the same: A three dimensional (3-D) non-volatile memory device includes a pipe gate including a first pipe gate, a second pipe gate formed on the first pipe gate, and a first interlayer insulating layer interposed between the first pipe gate and the second pipe gate, word lines alternately stacked with second interlayer... Agent: Sk Hynix Inc.
20150017771 - 3d non-volatile memory device and method of manufacturing the same: A 3D non-volatile memory device includes a pipe gate, at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer, and at... Agent:
20150017769 - Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device: A vertical semiconductor device having a vertical channel region is disclosed. The vertical semiconductor device includes a pillar having a vertical channel region, a bit line buried in a semiconductor substrate located at a lower part of the pillar, and a body connection unit configured to couple at least one... Agent:
20150017772 - Method of doping a polycrystalline transistor channel for vertical nand devices: A method of doping the polycrystalline channel in a vertical FLASH device is disclosed. This method uses a plurality of high energy ion implants to dope the channel at various depths of the channel. In some embodiments, these ion implants are performed at an angle offset from the normal direction,... Agent:
20150017773 - Semiconductor device and method for manufacturing the same: In the semiconductor device, a line-type buried gate is formed by burying a non-operating gate (isolation gate) with a polysilicon material to reduce a work function and a Gate Induced Drain Leakage (GIDL) caused by the non-operating gate, resulting in improvement of refresh characteristics of the semiconductor device. Operating gates... Agent:
20150017775 - Device with a vertical gate structure: A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at... Agent:
20150017776 - Epitaxial growth of doped film for source and drain regions: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope... Agent:
20150017774 - Method of forming fins with recess shapes: Thermal oxidation treatment methods and processes used during fabrication of semiconductor devices are provided. One method includes, for instance: obtaining a device with at least one cavity etched into the device; performing a thermal oxidation treatment to the at least one cavity; and cleaning the at least one cavity. One... Agent:
20150017777 - Method of fabricating mos device: Provided is a method of fabricating a MOS device including the following steps. A gate structure is formed on a substrate and a first spacer is formed at a sidewall of the gate structure. A first implant process is performed to form source and drain extension regions in the substrate.... Agent:
20150017778 - Capacitor in post-passivation structures and methods of forming the same: A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation... Agent:
20150017779 - Semiconductor device having stacked storage nodes of capacitors in cell region separated from peripheral region: Methods of fabricating a semiconductor device are provided. The method includes forming a first mold layer on a in a cell region and a peripheral region, forming first storage nodes penetrating the first mold layer in the cell region and a first contact penetrating the first mold layer in the... Agent:
20150017780 - Nonvolatile resistive memory element with an integrated oxygen isolation structure: A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device... Agent:
20150017781 - Method of forming shallow trench isolation structure: A method of forming a shallow trench isolation structure is disclosed. Hard mask patterns are formed on a substrate. A portion of the substrate is removed, using the hard mask patterns as a mask, to form first trenches in the substrate, wherein a fin is disposed between the neighboring first... Agent:
20150017782 - Bonding device and bonding method: A bonding device for bonding substrates together, includes: a first holding unit configured to hold a first substrate on a lower surface thereof; a second holding unit located below the first holding unit and configured to hold a second substrate on an upper surface thereof; a moving mechanism configured to... Agent:
20150017783 - Method for manufacturing bonded soi wafer: The present invention is directed to a method for manufacturing an SOI wafer in which the bonded SOI wafer after the delamination by the ion implantation delamination method is subjected to a rapid thermal oxidation process such that an oxide film is formed on a surface of the SOI layer,... Agent:
20150017784 - Semiconductor processing apparatus using laser: Provided is a semiconductor processing apparatus, including a first laser beam irradiation unit having a first variable beam expanding telescope and a first galvanometer scanner transferring a first laser beam having a first wavelength, a second laser beam irradiation unit having a second variable beam expanding telescope and a second... Agent: Samsung Electronics Co., Ltd.
20150017785 - Method of forming salicide block with reduced defects: A method of forming a salicide block with reduced defects is disclosed, the method including performing an ultraviolet cure process on a silicon nitride layer deposited in a previous step. High-energy ultraviolet light used in the ultraviolet cure process breaks the hydrogen-containing chemical bonds such as silicon-hydrogen and nitrogen-hydrogen in... Agent: Shanghai Huali Microelectronics Corporation
20150017786 - Method for treating group iii nitride substrate and method for manufacturing epitaxial substrate: Provided is a method for treating a group III nitride substrate capable of obtaining, in the case where a group III nitride layer is laminated thereon, a group III nitride substrate that can form an electronic device having excellent characteristics. The method for treating a group III nitride substrate includes... Agent: Ngk Insulators, Ltd.
20150017787 - Method and apparatus to reduce contamination of particles in a fluidized bed reactor: A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa... Agent:
20150017788 - Method for making silicon-germanium absorbers for thermal sensors: A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at... Agent:
20150017789 - Electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase... Agent: Sixpoint Materials, Inc.
20150017790 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes: preparing a Si substrate having a flat portion with flat front and back surfaces and a bevel portion located at a periphery of the flat portion; forming a III-V nitride semiconductor film on the front surface of the Si substrate by epitaxial... Agent: Mitsubishi Electric Corporation
20150017791 - Film-forming composition and ion implantation method: There is provided an ion implantation method, a composition for forming an ion implantation film and a resist underlayer film-forming composition. An ion implantation method including the steps of: forming a film by applying a film-forming composition containing a compound including an element in group 13, group 14, group 15,... Agent:
20150017792 - Method and system for diffusion and implantation in gallium nitride based devices: A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed... Agent:
20150017793 - Formation of localised molten regions in silicon containing multiple impurity types: A method for creating an inwardly extending impurity distribution profile in a substrate comprising crystalline silicon material having a background doping of a first impurity type, comprising: a) providing one or more additional impurity sources with at least two different types of impurity atoms within the substrate or in proximity... Agent: Newsouth Innovations Pty Limited
20150017794 - Methods for forming doped silicon oxide thin films: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor... Agent: Asm International. N.v.
20150017795 - Non-volatile memory with silicided bit line contacts: An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A further benefit of the... Agent:
20150017796 - Techniques providing metal gate deviceswith multiple barrier layers: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK... Agent:
20150017797 - Method of manufacturing semiconductor device including metal-containing conductive line: A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing... Agent:
20150017800 - Interconnect structure for semiconductor devices: A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface,... Agent:
20150017798 - Method of manufacturing through-silicon-via: A method of manufacturing through-silicon-via (TSV) including the steps of sequentially forming a liner layer and a metal layer in a TSV hole, performing a chemical mechanical polishing process to remove the metal layer on the substrate so that the remaining metal layer in the TSV hole becomes a TSV,... Agent:
20150017799 - Method of semiconductor integrated circuit fabrication: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A patterned dielectric layer with a plurality of openings is formed on the substrate. A barrier layer is deposited in the openings by a first tool and a sacrificing protection layer is deposited... Agent:
20150017801 - Semiconductor structure and method for making same: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a substrate; forming a dielectric layer over the substrate; forming a first opening and a second opening at least partially simultaneously through the dielectric layer over the substrate; and forming a third opening through the... Agent:
20150017802 - Double-etch nanowire process: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a... Agent: Bandgap Engineering, Inc.
20150017803 - Customized alleviation of stresses generated by through-substrate via(s): Fabrication of through-substrate via (TSV) structures is facilitated by: forming at least one stress buffer within a substrate; forming a through-substrate via contact within the substrate, wherein the through-substrate via structure and the stress buffer(s) are disposed adjacent to or in contact with each other; and where the stress buffer(s)... Agent:
20150017804 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same: A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer... Agent:
20150017805 - Wafer processing apparatus having independently rotatable wafer support and processing dish: An apparatus for processing a wafer is disclosed that includes a wafer support and a processing base. The wafer support is configured to support a wafer in a processing position, and to rotate the wafer about a first substantially vertical axis while in the processing position. The processing base includes... Agent:
20150017806 - Polishing agent, polishing agent set, and substrate polishing method: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.... Agent:
20150017807 - Methods of forming patterns: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the... Agent:
20150017808 - Method of forming fine patterns of semiconductor device: A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light,... Agent:
20150017809 - Fluorocarbon based aspect-ratio independent etching: A method for etching features into an etch layer disposed below a patterned mask is provided. At least three cycles are provided, where each cycle comprises providing an ion bombardment, by creating a plasma, of the etch layer to create activated sites of surface radicals in parts of the etch... Agent:
20150017810 - Dual chamber plasma etcher with ion accelerator: The embodiments herein generally deal with semiconductor processing methods and apparatus. More specifically, the embodiments relate to methods and apparatus for etching a semiconductor substrate. A partially fabricated semiconductor substrate is provided in a reaction chamber. The reaction chamber is divided into an upper sub-chamber and a lower sub-chamber by... Agent:
20150017811 - Method for processing base body to be processed: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a)... Agent:
20150017812 - Sequential precursor dosing in an ald multi-station/batch reactor: Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second... Agent:
20150017813 - Semiconductor device manufacturing method and substrate treatment system: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or... Agent:
20150017814 - Method of forming gate oxide layer: A method of forming a gate oxide layer is disclosed, which introduces a rapid laser annealing process, performed on the surface of the gate SiON layer, prior to a high-temperature annealing process performed on the gate SiON layer. This enables the method of the invention to remove the intrinsic oxide... Agent: Shanghai Huali Microelectronics Corporation
20150017815 - Combinatorial non-contact wet processing: An apparatus and method for combinatorial non-contact wet processing of a liquid material may include a source of a liquid material, a first reaction cell, a second reaction cell, a first plurality of gas jets disposed within an interior of the first reaction cell, the first plurality of gas jets... Agent:
20150017817 - Laser processing apparatus and laser processing method: A laser processing apparatus includes a laser beam generating device that generates a first pulse laser beam for temporarily increasing a light absorptance in a predetermined region of a processing object, and a second pulse laser beam to be absorbed in the predetermined region in which the light absorptance has... Agent: Aisin Seiki Kabushiki Kaisha
20150017816 - Method for performing laser crystallization: A method for performing a laser crystallization is provided. The method includes generating a laser beam, refracting the laser beam to uniformize an intensity of the laser beam at a focal plane of the laser beam. The laser beam whose intensity is uniformized is applied into an object substrate mounted... Agent: Samsung Display Co., Ltd.Previous industry: Chemistry: analytical and immunological testing
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