Semiconductor device manufacturing: process patents - Monitor Patents
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Semiconductor device manufacturing: process

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
04/10/2014 > 66 patent applications in 50 patent subcategories.

20140099734 - Deposition method and deposition apparatus: Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply... Agent: Tokyo Electron Limited

20140099735 - Structure and method to fabricate high performance mtj devices for spin-transfer torque (stt)-ram application: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write... Agent: Magic Technologies, Inc.

20140099736 - Array substrate for liquid crystal display device and method of fabricating the same: A liquid crystal display device includes an array substrate and a color filter substrate, a plurality of gate lines and a plurality of data lines formed on the array substrate such that the gate lines and the data lines intersect each other to define a plurality of pixel regions, a... Agent: Lg Display Co., Ltd.

20140099737 - Method for monitoring contact hole etching process of tft substrate: The present invention provides a method for monitoring a contact hole etching process of a TFT substrate, which includes: (1) providing a substrate having a first metal layer and a monitoring machine; (2) providing a target value of reflection rate of the substrate having the first metal layer; (3) applying... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20140099740 - Depositing apparatus and method for manufacturing organic light emitting diode display using the same: A deposition apparatus includes a deposition source that receives a deposition material, and a plurality of spray nozzles arranged in a first direction at one side of the deposition source to spray the deposition material to a facing substrate. The deposition source includes a center area and outer areas, the... Agent:

20140099741 - Insulating pattern, method of forming the insulating pattern, light-emitting device, method of manufacturing the light-emitting device, and lighting device: A simple formation method of an insulating pattern having an eaves portion using one light-exposure mask is provided. As the formation method of an insulating pattern having an eaves portion, first, a first photosensitive organic layer is formed over a substrate, and then a first region is exposed to light... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140099738 - Laser irradiation apparatus and method of manufacturing organic light-emitting display apparatus using the same: A laser irradiation apparatus including a chamber configured to receive a panel including an organic layer on a substrate, a laser oscillator outside the chamber, and configured to irradiate a laser beam onto the panel in the chamber, and a transparent window at a side of the chamber, and configured... Agent: Samsung Display Co., Ltd.

20140099739 - Method for manufacturing light emitting diode chip with electrodes having smooth surfaces: A method for manufacturing a light emitting diode chip includes the following steps: providing an epitaxial structure having an epitaxial layer; forming a first electrode and a second electrode on the epitaxial layer; coating an inert layer on the epitaxial structure, the first electrode and the second electrode continuously; annealing... Agent:

20140099742 - Method for fabricating a semiconductor device: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140099743 - Flexible display device manufacturing method: A flexible display device manufacturing method includes preparing a substrate assembly in which a flexible substrate is formed on a carrier substrate; piling up a plurality of the prepared substrate assemblies in a heating furnace in multi-stages; performing heat treatment by providing hot blast onto each of the piled substrate... Agent: Samsung Display Co., Ltd.

20140099744 - Interconnection method for a micro-imaging device: A method for producing an opto-microelectronic micro-imaging device includes a step of forming a first functional part on the base of a first substrate, a base layer, and first electric connection pad. The first functional part is transferred onto a second substrate. The first substrate is thinned until the base... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20140099745 - Silicon-based visible and near-infrared optoelectric devices: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the... Agent: President And Fellows Of Harvard College

20140099746 - Method of manufacturing solar cell module: A method of manufacturing a solar cell module includes pressing a first silicone gel sheet provided on a sunlight receiving surface and a second silicone gel sheet provided on an opposite side sunlight non-receiving surface in vacuum to encapsulate the solar cell string with the first and second silicone gel... Agent: Shin-etsu Chemical Co., Ltd.

20140099747 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum... Agent: Lg Electronics Inc.

20140099748 - Hybrid multi-junction photovoltaic cells and associated methods: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom... Agent: Ascent Solar Technologies, Inc.

20140099749 - Method for manufacturing absorber layer of thin film solar cell: A method for manufacturing an absorber layer of thin film solar cells is revealed. Firstly vapors of different metal-organic sources are generated in a plurality of containers used for mounting different metal-organic sources. Then the vapors of the metal-organic sources are mixed with a carrier gas and are filled into... Agent: Atomic Energy Council-institute Of Nuclear Energy Research

20140099750 - Solution containment during buffer layer deposition: Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of... Agent: Global Solar Energy, Inc.

20140099751 - Method for forming doping region and method for forming mos: The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present... Agent: United Microelectronics Corp.

20140099752 - Semiconductor device and manufacturing method thereof: An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140099754 - Compliant interconnects in wafers: A microelectronic assembly includes a substrate and an electrically conductive element. The substrate can have a CTE less than 10 ppm/° C., a major surface having a recess not extending through the substrate, and a material having a modulus of elasticity less than 10 GPa disposed within the recess. The... Agent: Tessera, Inc.

20140099753 - Techniques for packaging multiple device components: Techniques for fabricating multiple device components. Specifically, techniques for fabricating a stacked package comprising at least one I/C module and a multi-chip package. The multi-chip package includes a plurality of integrated circuit dice coupled to a carrier. The dice are encapsulated such that conductive elements are exposed through the encapsulant.... Agent: Micron Technology, Inc.

20140099755 - Fabrication method of stacked package structure: A fabrication method of a stacked package structure is provided, which includes the steps of: providing a substrate having at least a semiconductor device disposed thereon; and disposing a semiconductor package on the substrate through a plurality of conductive elements such that the semiconductor device is located between the substrate... Agent: Siliconware Precision Industries Co., Ltd.

20140099756 - Thin film transistor and fabricating method: A thin-film transistor comprises a semiconductor panel, a dielectric layer, a semiconductor film layer, a conduct layer, a source and a drain. The semiconductor panel comprises a base, an intra-dielectric layer, at least one metal wire layer and at least one via layer. The dielectric layer is stacked on the... Agent: National Applied Research Laboratories

20140099757 - Iii-n device structures and methods: A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer... Agent: Transphorm Inc.

20140099758 - Sram devices utilizing strained-channel transistors and methods of manufacture: A novel SRAM memory cell structure and method of making the same are provided. The SRAM memory cell structure comprises strained PMOS transistors formed in a semiconductor substrate. The PMOS transistors comprise epitaxial grown source/drain regions that result in significant PMOS transistor drive current increase. An insulation layer is formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140099759 - Apparatus and methods for forming a modulation doped non-planar transistor: Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.... Agent:

20140099760 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device, wherein the method comprises steps as follows: A dummy gate with a poly-silicon gate electrode and a passive device having a poly-silicon element layer are firstly provided. A hard mask layer is then formed on the dummy gate and the passive device. Next,... Agent: United Microelectronics Corporation

20140099761 - Three dimensional semiconductor memory devices and methods of forming the same: Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper... Agent: Samsung Electronics Co., Ltd.

20140099762 - Manufacturing method of trench type power transistor device with super junction: The present invention provides a manufacturing method of a trench type power transistor device with a super junction. First, a substrate of a first conductivity type is provided, and then an epitaxial layer of a second conductive type is formed on the substrate. Next, a through hole is formed in... Agent: Anpec Electronics Corporation

20140099763 - Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level: Embodiment of the present invention provides a method of forming a semiconductor device. The method includes providing a semiconductor substrate; epitaxially growing a silicon-carbon layer on top of the semiconductor substrate; amorphizing the silicon-carbon layer; covering the amorphized silicon-carbon layer with a stress liner; and subjecting the amorphized silicon-carbon layer... Agent: International Business Machines Corporation

20140099764 - Graphene device including a pva layer or formed using a pva layer: An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer... Agent: The Trustees Of Columbia University In The City Of New York

20140099766 - Method of manufacturing semiconductor device: A resist layer (46a) including a thick film section (47a), which is relatively thick, at one side thereof, and a thin film section (47b), which is relatively thin, at the other side thereof is formed using a multiple-tone mask. A gate electrode (15a) is formed at a place where it... Agent: Sharp Kabushiki Kaisha

20140099765 - Transistor structure with feed-through source-to-substrate contact: An LDMOS (laterally diffused metal oxide semiconductor) structure connects the source to a substrate and also the gate shield while utilizing a reduced area for such contacts. The structure includes an electrically conductive substrate layer, a source, and a drain contact; the drain contact is separated from the substrate layer... Agent: Vishay-siliconix

20140099767 - Manufacturing method of semiconductor device: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces... Agent: Renesas Elcectronics Corporation

20140099768 - Semiconductor devices having passive element in recessed portion of device isolation pattern and methods of fabricating the same: A semiconductor device includes a substrate, a device isolation pattern and a passive circuit element. The device isolation pattern is located on the substrate, delimits an active region of the substrate, and includes a recessed portion having a bottom surface located below a plane coincident with a surface of the... Agent:

20140099769 - Method to protect against contact related shorts on utbb: Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on the active silicon layer. Lateral epitaxial growth of the active silicon layer forms protrusions into the isolation trenches to a lateral distance of at least... Agent: Stmicroelectronics, Inc.

20140099770 - Semiconductor device and a method of manufacturing the same and designing the same: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary... Agent: Renesas Electronics Corporation

20140099771 - Reverse tone sti formation: A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140099773 - Dual shallow trench isolation liner for preventing electrical shorts: A shallow trench is formed to extend into a handle substrate of a semiconductor-on-insulator (SOI) layer. A dielectric liner stack of a dielectric metal oxide layer and a silicon nitride layer is formed in the shallow trench, followed by deposition of a shallow trench isolation fill portion. The dielectric liner... Agent: Stmicroelectronics, Inc.

20140099772 - Method of forming a backside contact structure having selective side-wall isolation: A backside contact structure is created using the following sequence of steps: etching a deep tench from the front surface of the semiconductor wafer to the buried layer to be contacted; depositing an isolation layer into the trench which covers the surfaces of the trench; performing an ion beam anisotropic... Agent:

20140099774 - Method for producing strained ge fin structures: Disclosed are methods for forming fins. In an example embodiment, a method includes providing a substrate that includes at least two elongated structures separated by an isolation region. Each elongated structure comprises a semiconductor alloy of a first semiconductor material and a second semiconductor material, and a relaxed portion of... Agent: Imec

20140099775 - Method for fabricating semiconductor device with mini sonos cell: A method for fabricating a semiconductor device with mini-SONOS cell is disclosed. The method includes: providing a semiconductor substrate having a first MOS region and a second MOS region; forming a first trench in the semiconductor substrate between the first MOS region and the second MOS region; depositing a oxide... Agent: United Microelectronics Corp.

20140099776 - Compressively strained soi substrate: A method of forming a strained silicon-on-insulator includes forming a first wafer having a compressively strained active semiconductor layer, forming a second wafer having an insulation layer formed above a bulk semiconductor layer, and bonding the compressively strained active semiconductor layer of the first wafer to the insulation layer of... Agent: International Business Machines Corporation

20140099777 - Singulation processes: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer... Agent: Infineon Technologies Ag

20140099778 - Indexed inline substrate processing tool: In some embodiments, an indexed inline substrate processing tool may include a substrate carrier having a base and pair of opposing substrate supports having respective substrate support surfaces that extend upwardly and outwardly from the base; and a plurality of modules coupled to one another in a linear arrangement, wherein... Agent: Applied Materials, Inc.

20140099779 - Reverse tone sti formation: A method includes forming a hard mask over a substrate, patterning the hard mask to form a first plurality of trenches, and filling a dielectric material into the first plurality of trenches to form a plurality of dielectric regions. The hard mask is removed from between the plurality of dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140099781 - Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device: The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140099780 - Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation: Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer, and irradiating a selected area of the... Agent: International Business Machines Corporation

20140099782 - Method and apparatus for thermal control of ion sources and sputtering targets: A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has... Agent: Varian Semiconductor Equipment Associates, Inc.

20140099783 - Method of adding an additional mask in the ion-implantation process: The present invention discloses a method of adding an additional mask in the ion-implantation process. It relates to technical field of ion implantation. This invention comprises: a mask plate is added upon the said MPW and the nitrogen element is implanted in the said MPW; the implanted nitrogen element is... Agent: Shangai Huali Microelectronics Corporation

20140099784 - Method for manufacturing a semiconductor device: A method for manufacturing a semiconductor device includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern and a second metal gate film pattern in the trench, redepositing a second metal gate film on the first and second metal gate film patterns... Agent: Samsung Electronics Co., Ltd.

20140099785 - Sacrificial low work function cap layer: A method includes forming an interlayer on a substrate, depositing a dielectric on the interlayer to form a dielectric stack, forming a sacrificial cap layer over the dielectric stack, processing the substrate to alter properties of the dielectric stack, and removing the sacrificial cap layer.... Agent: Intermolecular, Inc.

20140099786 - Methods of forming through substrate interconnects: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from... Agent: Micron Technology, Inc.

20140099788 - Method for applying an image of an electrically conductive material onto a recording medium and device for ejecting droplets of an electrically conductive fluid: The invention relates to a method for applying an image of an electrically conductive material onto a recording medium. In the method, the recording medium is heated and the electrically conductive material is jetted onto the recording medium. The invention further relates to a device for ejecting droplets of an... Agent: Oce-technologies B.v.

20140099787 - Semiconductor device processing with reduced wiring puddle formation: A method of forming an interconnect structure for a semiconductor device includes forming a lower antireflective coating layer over a dielectric layer; forming an organic planarizing layer on the lower antireflective coating layer; transferring a wiring pattern through the organic planarizing layer; transferring the wiring pattern through the lower antireflective... Agent: International Business Machines Corporation

20140099789 - Method of making an interconnect device: A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning... Agent: Lam Research Corporation

20140099790 - Chemical mechanical polishing composition having chemical additives and methods for using same: Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate... Agent: Air Products And Chemicals, Inc.

20140099791 - Composition for forming resist underlayer film for euv lithography: A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so... Agent: Nissan Chemical Industries, Ltd.

20140099792 - Single fin cut employing angled processing methods: Fin-defining spacers are formed on an array of mandrel structure. Mask material portions can be directionally deposited on fin-defining spacers located on one side of each mandrel structure, while not deposited on the other side. A photoresist layer is subsequently applied and patterned to form an opening, of which the... Agent: International Business Machines Corporation

20140099793 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes forming a first mask on a substrate, forming a first side wall of a fin by performing a first etching of the substrate using the first mask, forming a second mask on the substrate, the second mask being different from the first... Agent: Samsung Electronics Co., Ltd.

20140099794 - Radical chemistry modulation and control using multiple flow pathways: Systems and methods are described relating to semiconductor processing chambers. An exemplary chamber may include a first remote plasma system fluidly coupled with a first access of the chamber, and a second remote plasma system fluidly coupled with a second access of the chamber. The system may also include a... Agent: Applied Materials, Inc.

20140099795 - Methods and apparatus for processing substrates using an ion shield: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto,... Agent: Applied Materials, Inc.

20140099796 - Method for developing low dielectric constant film and devices obtained thereof: A method for porogen removal of porous SiOCH film is provided, as well as devices obtained thereof. The devices and associated methods are in the field of advanced semiconductor interconnect technology, and more in particular in the development of dielectric films with low-k value.... Agent: Imec

20140099797 - Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus: A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the... Agent: Hitachi Kokusai Electric Inc.

20140099799 - Lithography masks, systems, and manufacturing methods: Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being... Agent: Infineon Technologies Ag

20140099798 - Uv-curing apparatus provided with wavelength-tuned excimer lamp and method of processing semiconductor substrate using same: A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit having at least one dielectric barrier discharge excimer lamp which is constituted by a luminous tube containing a rare gas wherein an inner surface of the luminous tube is coated with a fluorescent substance having a... Agent: AsmIPHolding B.v.

  
04/03/2014 > 58 patent applications in 47 patent subcategories.

20140093983 - Method for fabricating a damascene self-aligned ferrorelectric random access memory (f-ram) having a ferroelectric capacitor aligned with a three dimensional transistor structure: A method for a non-volatile, ferroelectric random access memory (F-RAM) device that includes a ferroelectric capacitor aligned with a preexisting structure is described. In one embodiment, the method includes forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least... Agent: Cypress Semiconductor Corporation

20140093984 - Substrate processing apparatus, substrate transfer method and storage medium: In a substrate processing apparatus 1 which performs a process on a substrate W, each of multiple processing modules 2 includes at least a first processing member 21 and a second processing member 22, and substrate transfer devices 15 and 17 transfer substrates W into the multiple processing modules 2.... Agent: Tokyo Electron Limited

20140093985 - In situ optical diagnostic for monitoring or control of sodium diffusion in photovoltaics manufacturing: A method of fabricating a photovoltaic device 100, includes the steps of providing a glass substrate 102, depositing a molybdenum layer 104 on a surface of the glass substrate, directing light through the glass substrate to the near-substrate region of the molybdenum layer 206, detecting an optical property of the... Agent: Alliance For Sustainable Energy, LLC

20140093986 - Optically monitoring and controlling nanoscale topography: Methods and apparatus for method for characterizing a height profile of a scattering surface relative to a fiducial plane. The scattering surface, which may be an interface between distinct solid, liquid, gaseous or plasma phases, is illuminated with substantially spatially coherent light, and light scattered by the scattering surface is... Agent: The Board Of Trustees Of The University Of Illinois

20140093987 - Residue detection with spectrographic sensor: Detecting residue of a filler material over a patterned underlying layer includes causing relative motion between a probe of an optical metrology system and a substrate, obtaining a plurality of measured spectra with the optical metrology system through the probe from a plurality of different measurement spots within an area... Agent:

20140093990 - Light emitting diode optical emitter with transparent electrical connectors: An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a... Agent: Tsmc Solid State Lighting Ltd.

20140093989 - Light emitting diode thermally enhanced cavity package and method of manufacture: Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate into a first portion containing the cavity and... Agent: Micron Technology, Inc.

20140093988 - Method of manufacturing display device: According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate configured such that a first display element module is formed on a first glass substrate, preparing a second substrate configured such that a first peeling auxiliary layer is formed on a second glass substrate,... Agent: Japan Display Inc.

20140093991 - Method for manufacturing high efficiency light-emitting diodes: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined... Agent: Epistar Corporation

20140093992 - Gas sensor and method for manufacturing the gas sensor: It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140093993 - Device of monolithically integrated optoelectrics: A method is disclosed for fabricating optoelectronic component structures and traditional circuit elements on a single silicon substrate. Specific examples of optoelectronic components include, but are not limited to: photodiode structures, light emitter structures and waveguide structures. Traditional circuit elements include transistors, diodes, resistors, capacitors and associated metalized interconnects. The... Agent:

20140093994 - Front-side illuminated, back-side contact double-sided pn-junction photodiode arrays: The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate... Agent:

20140093995 - Method of hybrid stacked chip for a solar cell: A method of hybrid stacked Chip for a solar cell onto which semiconductor layers of different materials is provided by stacking tunnel layer and bumps in order to solve the problem of lattices mismatch between the layers for further increasing of the efficiency of solar cell. Electric charges (i.e., current)... Agent: Chang Gung University

20140093996 - Method and apparatus for diffusinon into semiconductor materials: A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein... Agent:

20140093997 - Method of manufacturing an organic semiconductor thin film: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed... Agent:

20140093998 - Thin film transistor panel and fabricating method thereof: A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between... Agent: Samsung Display Co., Ltd.

20140093999 - Embedded structures for package-on-package architecture: Electronic assemblies including substrates and their manufacture are described. One assembly includes a die embedded in a dielectric layer in a multilayer substrate, and a dielectric region embedded in the dielectric layer in the multilayer substrate. The multilayer substrate includes a die side and a land side, with the first... Agent:

20140094000 - Semiconductor device: Provided is a semiconductor device with a semiconductor chip mounted on a small-sized package substrate that includes a slot, a large number of external connection terminals, and bonding fingers. The bonding fingers are connected to the external connection terminals. The bonding fingers constitute a bonding finger arrangement in a central... Agent: Elpida Memory, Inc.

20140094001 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a semiconductor chip, a connection electrode including a first land electrode electrically coupled with the semiconductor chip, and a through electrode formed on an upper surface of the first land electrode to be electrically coupled with the first land electrode using a stud bump, and a... Agent: Spansion LLC

20140094002 - Active layer ion implantation method and active layer ion implantation method for thin-film transistor: Disclosed are an active layer ion implantation method and an active layer ion implantation method for thin-film transistor. The active layer ion implantation method comprises: applying a photoresist on the active layer; and implanting ions into the active layer through the photoresist.... Agent: Boe Technology Group Co., Ltd.

20140094003 - Printed material constrained by well structures and devices including same: A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively... Agent: Palo Alto Research Center Incorporated

20140094004 - Printed dopant layers: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or... Agent:

20140094005 - Enhancement-mode gan mosfet with low leakage current and improved reliability: An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO2/Si3N4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si3N4 portion of the SiO2/Si3N4 gate insulation layer significantly reduces the formation of interface states at the junction between the... Agent: National Semiconductor Corporation

20140094007 - Through silicon via and method of fabricating same: A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer... Agent: Ultratech, Inc.

20140094006 - Transistor formation using cold welding: A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is... Agent: International Business Machines Corporation

20140094008 - Cmos devices with schottky source and drain regions: A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension region. The semiconductor structure further includes a PMOS device at the surface of the semiconductor substrate, wherein the PMOS device comprises a source/drain... Agent: Taiwan Seminconductor Manufacturing Company, Ltd.

20140094009 - Semiconductor device with self-aligned interconnects: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140094010 - Method of forming electronic components with increased reliability: An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a... Agent: Transphorm Inc.

20140094011 - Self-aligned method of forming a semiconductor memory array of floating gate memory cells with single poly layer: A method of forming a semiconductor memory cell that includes forming the floating and control gates from the same poly layer. Layers of insulation, conductive and second insulation material are formed over a substrate. A trench is formed in the second insulation material extending down to and exposing the conductive... Agent: Silicon Storage Technology, Inc.

20140094012 - Three-dimensional semiconductor memory devices: Provided are three-dimensional semiconductor devices. A device includes an electrode structure including conductive patterns sequentially stacked on a substrate, a semiconductor pattern penetrating the electrode structure and including channel regions adjacent to the conductive patterns and vertical adjacent regions between the channel regions, and a semiconductor connecting layer extending from... Agent: Samsung Electronics Co., Ltd.

20140094013 - Fabricating method of trench-gate metal oxide semiconductor device: A fabricating method of a trench-gate metal oxide semiconductor device is provided. The fabricating method includes the steps of defining a first zone and a second zone in a substrate, forming at least one first trench in the second zone, forming a dielectric layer on the first zone and the... Agent: United Microelectronics Corporation

20140094014 - Contact structures for semiconductor transistors: Embodiments of the present invention provide a method of forming contact structure for transistor. The method includes providing a semiconductor substrate having a first and a second gate structure of a first and a second transistor formed on top thereof, the first and second gate structures being embedded in a... Agent: International Business Machines Corporation

20140094016 - Alignment for backside illumination sensor: Provided is an apparatus that includes an integrated circuit located in a first region of a substrate having first and second opposing major surfaces and an alignment mark located in a second region of the substrate and extending through the substrate between the first and second surfaces.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140094015 - Alignment measurement system, overlay measurement system, and method for manufacturing semiconductor device: According to one embodiment, an alignment measurement system is configured to measure a position of a mark having the highest identifiability of a plurality of marks formed in a substrate. The plurality of marks are made of mutually different patterns. A device pattern is formed in the substrate using directed... Agent: Kabushiki Kaisha Toshiba

20140094017 - Manufacturing method for a shallow trench isolation: A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a... Agent: United Microelectronics Corp.

20140094018 - Method for dicing a substrate with back metal: The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface... Agent: Plasma-therm, LLC

20140094020 - Method of manufacturing semiconductor device: Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer... Agent: Fuji Electric Co., Ltd.

20140094019 - Wafer processing method: A wafer processing method of dividing a wafer along a plurality of crossing streets formed on the wafer to obtain individual chips. The wafer processing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the wafer along each street to thereby form... Agent: Disco Corporation

20140094022 - Method for making epitaxial structure: A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown... Agent: Tsinghua University

20140094021 - Method for producing graphene oxide with tunable gap: A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can... Agent: California Institute Of Technology

20140094023 - Fabricating method of semiconductor chip: A fabricating method of a semiconductor chip includes the following steps. Firstly, a substrate is provided, wherein an amorphous semiconductor layer is formed in a first surface of the substrate. Then, a first metal layer is formed on the amorphous semiconductor layer. Then, a thermal-treating process is performed to result... Agent: National Applied Research Laboratories

20140094024 - Plasma doping apparatus, plasma doping method, and method for manufacturing semiconductor device: Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias... Agent: Tokyo Electron Limited

20140094025 - Method of processing a semiconductor assembly: A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source... Agent: General Electric Company

20140094026 - Method for providing electrical connections to spaced conductive lines: An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material... Agent: Micron Technology, Inc.

20140094027 - Film forming method and film forming apparatus: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed... Agent: Tokyo Electron Limited

20140094028 - Contact and via interconnects using metal around dielectric pillars: An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming... Agent:

20140094029 - Method for forming an electrical connection between metal layers: A method includes forming a connection between a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A via location for a first via between the first metal layer and the second metal layer is identified. Additional locations for first additional... Agent: Freescale Semconductor, Inc.

20140094030 - Manufacturing method of semiconductor apparatus: A first wiring part has an intermediate layer made of a material different from materials of a first insulator layer and a first conductor layer and located between the first insulator layer and the first conductor layer. In a step of forming a first hole, which penetrates through a first... Agent: Canon Kabushiki Kaisha

20140094031 - Method for generating mask data and method for manufacturing integrated circuit device: According to one embodiment, a method for generating mask data is configured to form a circuit pattern on a substrate using a directed self-assembly material. The method includes extracting a first region, setting a second region and setting a third region. The first region does not existing in the circuit... Agent: Kabushiki Kaisha Toshiba

20140094032 - Polishing agent and polishing method: A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles,... Agent: Asahi Glass Company, Limited

20140094033 - Polishing composition: A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the... Agent: Fujimi Incorporated

20140094034 - Pattern forming method: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to... Agent: Tokyo Electron Limited

20140094035 - Carbon deposition-etch-ash gap fill process: Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor wafers are provided. The techniques may include performing deposition-etching operations in a cyclic fashion to fill a gap feature with carbon. A plurality of such deposition-etching cycles may be performed, resulting in a localized build-up of carbon film on the... Agent: Novellus Systems, Inc.

20140094036 - Directional sio2 etch using low-temperature etchant deposition and plasma post-treatment: Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first... Agent:

20140094037 - Method and apparatus for preventing native oxide regrowth: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed... Agent: Intermolecular, Inc.

20140094038 - Enhancing adhesion of cap layer films: The present invention provides methods and apparatuses for improving adhesion of dielectric and conductive layers on a substrate to the underlying layer. The methods involve passing a process gas through a plasma generator downstream of the substrate to create reactive species. The underlying layer is then exposed to reactive species... Agent: Novellus Systems, Inc.

20140094039 - Edge ring lip: Embodiments of the invention generally relate to a support ring to support a substrate in a process chamber. In one embodiment, the support ring comprises an inner ring, an outer ring connecting to an outer perimeter of the inner ring through a flat portion, an edge lip extending radially inwardly... Agent:

20140094040 - Plasma processing method: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is... Agent: Panasonic Corporation

  
03/27/2014 > 86 patent applications in 68 patent subcategories.

20140087483 - Manufacturing method of magnetoresistive effect element and manufacturing apparatus of magnetoresistive effect element: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and... Agent: Kabushiki Kaisha Toshiba

20140087484 - Method for fabricating a damascene self-aligned ferrorelectric random access memory (f-ram) with simultaneous formation of sidewall ferroelectric capacitors: A method for fabricating a non-volatile, ferroelectric random access memory (F-RAM) device is described. In one embodiment, the method includes forming an opening in an insulating layer over a surface of a substrate, and forming bottom electrode spacers proximal to sidewalls of the opening. Next, a ferroelectric dielectric layer is... Agent: Cypress Semiconductor Corporation

20140087485 - Semiconductor device manufacturing method: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a first magnetic film containing boron, forming a second magnetic film free from boron, above the first magnetic film. The method further includes selectively etching the second magnetic film with respect to the... Agent:

20140087486 - Method for etching with controlled wiggling: A method for etching trenches in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated, comprising flowing a treatment gas comprising H2 and N2, forming a plasma from the treatment gas, making patterned organic mask more resistant to wiggling, and stopping the... Agent: Lam Research Corporation

20140087487 - Method for repairing solar cell module: A method for repairing a solar cell module includes the following steps. A solar cell module, which is provided, includes a first and a second solar cell serially connected. A first terminal is electrically connected to a first electrode layer of the first solar cell. A second terminal is electrically... Agent: Industrial Technology Research Institute

20140087489 - Bottom and side plasma tuning having closed loop control: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be... Agent: Applied Materials, Inc.

20140087488 - Showerhead electrode assembly in a capacitively coupled plasma processing apparatus: A showerhead electrode assembly for use in a capacitively coupled plasma processing apparatus comprising a heat transfer plate. The heat transfer plate having independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be... Agent: Lam Research Corporation

20140087490 - Method and apparatus for improving particle performance: A method for combinatorially processing a substrate is provided. The method includes providing a substrate disposed on a substrate support. The method further includes rigidly locking a top portion of a sleeve to a bottom portion of a process head of a combinatorial processing device, where the combinatorial processing device... Agent: Intermolecular, Inc.

20140087492 - Exclusion zone for stress-sensitive circuit design: A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140087491 - Wafer level bonding method for fabricating wafer level camera lenses: A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value... Agent: Omnivision Technologies (shanghai) Co., Ltd.

20140087493 - Method of manufacturing optical modulator, and optical modulator: A method for manufacturing an optical modulator having a laser diode section and an EAM section. LD growth layers which are semiconductor layers for manufacturing the laser diode section, are formed on a semiconductor substrate. An EAM absorption layer for forming the EAM section is then formed on the semiconductor... Agent: Mitsubishi Electric Corporation

20140087494 - Display device and method of manufacturing the same: A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the... Agent: Samsung Display Co., Ltd.

20140087495 - Organic light emitting element and method of manufacturing the same: An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having... Agent: Samsung Display Co., Ltd.

20140087497 - Barrier film for electronic devices and substrates: Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle θ relative to the substrate, wherein θ is greater than about 0° and less than about 85°. Additionally, a... Agent: Universal Display Corporation

20140087498 - Method of manufacturing light-emitting device: A method of manufacturing a light-emitting device includes mounting an LED chip on a bottom surface of a recessed portion of a case, and after mounting the LED chip, forming a highly-reflective sidewall so as to be in contact with side surfaces and the bottom surface of the recessed portion... Agent: Toyoda Gosei Co., Ltd.

20140087496 - Methods and structures for forming and protecting thin films on substrates: A method for forming of a thin film on a substrate is disclosed. The method includes cleaning a process chamber by flowing a first gas having fluorine. The method also includes coating the process chamber with a first encapsulating layer including amorphous silicon (A-Si) by flowing a second gas for... Agent: Sunpower Corporation

20140087499 - Method for handling a semiconductor wafer assembly: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.... Agent: Semileds Optoelectronics Co., Ltd.

20140087501 - Doped graphene transparent conductive electrode: Graphene is used as a replacement for indium tin oxide as a transparent conductive electrode which can be used in an organic light emitting diode (OLED) device. Using graphene reduces the cost of manufacturing OLED devices and also makes the OLED device extremely flexible. The graphene is chemically doped so... Agent: International Business Machines Corporation

20140087502 - Light emitting diode chip having distributed bragg reflector and method of fabricating the same: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second... Agent: Seoul Opto Device Co., Ltd.

20140087500 - Transparent conductive electrode stack containing carbon-containing material: A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack... Agent: International Business Machines Corporation

20140087503 - Method for fabricating a display panel: A method for fabricating a display panel includes the following steps. A surface of a first substrate is adhered to a first supporting substrate with a first adhesive layer. First devices are formed on the other surface of the first substrate. The other surface of the first substrate is adhered... Agent: Au Optronics Corp.

20140087505 - Light-emitting diodes on concave texture substrate: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140087504 - Oled display with spalled semiconductor driving circuitry and other integrated functions: Spalling is employed to generate a single crystalline semiconductor layer. Complementary metal oxide semiconductor (CMOS) logic and memory devices are formed on a single crystalline semiconductor substrate prior to spalling. Organic light emitting diode (OLED) driving circuitry, solar cells, sensors, batteries and the like can be formed prior to, or... Agent: International Business Machines Corporation

20140087507 - Polythiophene-containing ink compositions for inkjet printing: Ink compositions comprising polythiophenes and methicone that are formulated for inkjet printing the hole injecting layer (HIL) of an organic light emitting diode (OLED) are provided. Also provided are methods of inkjet printing the HILs using the ink compositions.... Agent: Kateeva, Inc.

20140087506 - Zinc oxide-containing transparent conductive electrode: A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts... Agent: International Business Machines Corporation

20140087508 - Method for producing group iii nitride semiconductor light-emitting device: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a superlattice structure in which AlGaN and InGaN are alternately and repeatedly deposited is formed in two stages of the former process... Agent: Toyoda Gosei Co., Ltd.

20140087509 - Mems-based cantilever energy harvester: The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.... Agent: The Board Of Regents Of The University Of Texas System

20140087510 - Manufacturing method of an amorphous-silicon flat-panel x-ray sensor: An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate... Agent:

20140087511 - Method for producing a photovoltaic cell having a selective emitter: A method for manufacturing a photovoltaic cell with a selective emitter, including the steps of: depositing an antireflection layer including n-type dopants on an n- or p-type silicon substrate, said deposition being, performed in the presence of a chemical compound that accelerates the diffusion of n-type dopant atoms in said... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20140087512 - Liquid precursor for deposition of copper selenide and method of preparing the same: Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.... Agent: Alliance For Sustainable Energy, LLC

20140087513 - Embedded junction in hetero-structured back-surface field for photovoltaic devices: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of... Agent: International Business Machines Corporation

20140087515 - Method for the contact separation of electrically-conducting layers on the back contacts of solar cells and corresponding solar cell: A method for fabricating a solar cell including a semiconductor substrate is proposed where electrical contacting is made on the back side of the semiconductor substrate. The back side of the semiconductor substrate has locally doped regions. The adjacent regions exhibit different doping from the region. The two regions are... Agent: Institut F&#xfc R Solarenergieforschung Gmbh

20140087514 - Photoelectric converter, method of manufacturing photoelectric converter and imaging device: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one... Agent: Fujifilm Corporation

20140087517 - Semiconductor device: An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140087516 - Semiconductor device and method for manufacturing the same: An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140087518 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed... Agent: Elpida Memory, Inc.

20140087519 - Package process and package structure: A package process is provided. An adhesive layer is disposed on a carrier board and then plural first semiconductor devices are disposed on the adhesive layer. A first molding compound formed on the carrier board covers the sidewalls of the first semiconductor devices and fills the gaps between the first... Agent: Advanced Semiconductor Engineering, Inc.

20140087520 - Method of manufacturing semiconductor device: To improve the reliability in applying a tape to the rear surface of a substrate while securing the heat resistance of the tape applied to the rear surface of the substrate. There is a gap between a bottom surface of a ditch provided in a support member and an upper... Agent: Renesas Electronics Corporation

20140087521 - Wafer level chip scale packaging: An improved wafer level chip scale packaging technique is described which does not use an encapsulated via to connect between a redirection layer and a pad within the pad ring on the semiconductor die. In an embodiment, a first dielectric layer is formed such that it terminates on each die... Agent: Cambridge Silicon Radio Ltd.

20140087522 - Reducing delamination between an underfill and a buffer layer in a bond structure: A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other. An under-bump-metallurgy (UBM) is formed in an opening in the patterned buffer layer and an opening in the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140087524 - Method for producing a field effect transistor with implantation through the spacers: The substrate successively includes a support substrate, an electrically insulating layer, a semiconductor material layer, and a gate pattern. The semiconductor material layer and gate pattern are covered by a covering layer. A first doping impurity is implanted in the semiconductor material layer through the covering layer so as to... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20140087523 - Stacked nanowire field effect transistor: A method for fabricating a nanowire field effect transistor device includes depositing a first sacrificial layer on a substrate, depositing a first layer of a semiconductor material on the first sacrificial layer, depositing a second sacrificial layer on the first layer of semiconductor material, depositing a second layer of the... Agent: International Business Machines Corporation

20140087525 - Complementary metal oxide semiconductor transistor and fabricating method thereof: A fabricating method of CMOS transistor includes following steps. A first gate and a second gate are formed on a substrate. A gate insulator is formed on the substrate to cover the first and second gates. A first source, a first drain, a second source, and a second drain are... Agent: Au Optronics Corporation

20140087526 - Multi-gate field effect transistor devices: A method for fabricating a field effect transistor device includes patterning a semiconductor fin on a substrate insulator layer, the substrate insulator layer arranged on a substrate, patterning a dummy gate stack over a portion of the fin, forming spacers adjacent to the dummy gate stack, removing the dummy gate... Agent: International Business Machines Corporation

20140087527 - Method of forming thin film poly silicon layer and method of forming thin film transistor: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A thin film silicon layer is then formed on the substrate by a silicon thin film deposition process. A heating treatment is then applied to the substrate so as to convert the... Agent: Wintek Corporation

20140087528 - Printed material constrained by well structures and devices including same: A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively... Agent: Palo Alto Research Center Incorporated

20140087529 - Power device and method for manufacturing the same: Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and... Agent: Samsung Electronics Co., Ltd.

20140087530 - Field controlled diode with positively biased gate: An integrated circuit containing a field controlled diode which includes a p-type channel region between an upper gate and a lower n-type depletion gate, a p-type anode in a p-type anode well abutting the channel region, and an n-type cathode in a p-type anode well abutting the channel region opposite... Agent:

20140087531 - Two step poly etch ldmos gate formation: A method of making a transistor includes etching a first side of a gate, the gate including an oxide layer formed over a substrate and a conductive material formed over the oxide layer, the etching removing a first portion of the conductive material, implanting an impurity region into the substrate... Agent: Volterra Semiconductor Corporation

20140087532 - Cmos transistor and method for fabricating the same: The invention provides a method for fabricating a CMOS transistor and a method for fabricating an array substrate. The method for fabricating a CMOS transistor comprises a step of forming channels, which comprises: depositing an amorphous silicon layer on a substrate, and crystallizing the amorphous silicon layer into a poly-silicon... Agent: Boe Technology Group Co., Ltd.

20140087533 - Methods of forming transistors and methods of manufacturing semiconductor devices including the transistors: A method of forming a transistor is provided. An upper portion of a substrate is partially removed forming a trench. An isolation layer partially fills the trench, forming active patterns of the substrate. The isolation layer has a void therein. A photoresist pattern is formed on the active patterns and... Agent: Samsung Electronics Co., Ltd.

20140087534 - Methods of manufacturing vertical structure nonvolatile memory devices: A vertical structure nonvolatile memory device can include a channel layer that extends in a vertical direction on a substrate. A memory cell string includes a plurality of transistors that are disposed on the substrate in the vertical direction along a vertical sidewall of the channel layer. At least one... Agent:

20140087535 - Semiconductor devices and methods of forming the same: According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region. A compressive stress pattern is... Agent: Samsung Electronics Co., Ltd.

20140087536 - Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure: Gate cross diffusion in a semiconductor structure is substantially reduced or eliminated by forming multiple n-type gate regions with different dopant concentrations and multiple p-type gate regions with different dopant concentrations so that the n-type gate region with the lowest dopant concentration touches the p-type gate region with the lowest... Agent: Texas Instruments Incorporated

20140087537 - Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same: A semiconductor device including source drain stressors and methods of manufacturing the same are provided. The methods may include forming a recess region in the substrate at a side of a gate pattern, and an inner surface of the recess region may include a first surface of a (100) crystal... Agent: Samsung Electronics Co., Ltd.

20140087538 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate, wherein the gate stack comprises a gate dielectric layer and a gate conductor layer; selectively etching end portions of the gate dielectric layer to form gaps; and filling... Agent: Institue Of Microelectronics Chinese Academy Of Sciences

20140087539 - Process for manufactuirng super-barrier rectifiers: A process for manufacturing a semiconductor device, wherein a semiconductor layer is formed on a body of semiconductor material; a first mask is formed on the semiconductor layer; a first conductive region is implanted in the body using the first mask; a second mask is formed laterally and complementarily to... Agent: Stmicroelectronics S.r.i.

20140087540 - Method for forming trench isolation: A trench isolation method is disclosed. A substrate having thereon a pad layer and a hard mask is provided. An opening is formed in the hard mask. The substrate is etched through the opening to thereby form a first trench. A spacer is formed on a sidewall of the first... Agent: Anpec Electronics Corporation

20140087541 - Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate: A method of manufacturing a semiconductor substrate includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, and forming, when seen in a cross-section perpendicular to the first surface, cavities in the semiconductor wafer at a first distance from the first surface. The... Agent:

20140087542 - Semiconductor die singulation apparatus and method: In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in... Agent: Semiconductor Components Industries, LLC

20140087543 - Method for manufacturing soi substrate and semiconductor device: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140087546 - Method and device for coating substrates: The invention relates to a method and device for coating plate-shaped substrates, in particular glass substrates for solar cell production. The method includes heating the substrates, which are moved on transporting shafts through heating and coating chambers, by a different amount on the upper and lower sides, so that the... Agent: Ctf Solar Gmbh

20140087545 - Method for producing a group iii nitride semiconductor: The surface of a sapphire substrate having a c-plane main surface is patterned by ICP dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° C. or at a temperature of more than 800° C. to 1100° C.... Agent: Toyoda Gosei Co., Ltd.

20140087544 - Tin precursors for vapor deposition and deposition processes: Sn-containing precursors for deposition of Sn-containing films and methods of using are provided herein. In some embodiments, Sn-containing precursors are methylated and/or hydrogenated and/or deuteriated. In some embodiments, methods of chemical vapor deposition are provided.... Agent: Asm America, Inc.

20140087547 - Manufacturing method for semiconductor device, annealing device, and annealing method: According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or... Agent: Kabushiki Kaisha Toshiba

20140087548 - Method of shielding through silicon vias in a passive interposer: A method of shielding through silicon vias (TSVs) in a passive interposer includes doping a substrate with positive ions, and implanting positive ions in an upper portion of the substrate, such that the substrate has at least a p-doped portion and a heavily p-doped upper portion. The method further includes... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140087549 - Method for forming patterned doping regions: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover... Agent: Industrial Technology Research Institute

20140087550 - Method for forming patterned doping regions: Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion... Agent: Freescale Semiconductor, Inc.

20140087551 - Etching polysilicon: Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.... Agent: Micron Technology, Inc.

20140087552 - Method of forming a conductive polymer microstructure: The present disclosure relates to microstructure devices, in which a conductive pattern is formed on the basis of a conductive polymer material. In order to avoid the deposition and processing of the sacrificial materials and reduce a negative influence of the lithography process on sensitive conductive polymer materials a one-layer... Agent: Stmicroelectronics S.r.l.

20140087553 - Fabricating a wafer level semiconductor package having a pre-formed dielectric layer: There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric... Agent: Broadcom Corporation

20140087554 - Methods for forming arrays of small, closely spaced features: Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed... Agent: Micron Technology, Inc.

20140087555 - Method of forming semiconductor device: A semiconductor device includes a semiconductor substrate including a cell region and a core region adjacent to the cell region, active regions in the cell region and the core region, an interlayer insulating layer covering the active regions, upper cell contacts penetrating the interlayer insulating layer in the cell region,... Agent:

20140087556 - Method of manufacturing wiring substrate: A method of manufacturing a wiring substrate, includes, forming an etching stop layer and a first wiring layer on a supporting member, forming a first insulating layer on the first wiring layer, forming a via hole reaching the first wiring layer, and forming the wiring layers of an n-layer and... Agent: Shinko Electric Industries Co., Ltd.

20140087557 - Through silicon via wafer, contacts and design structures: Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material.... Agent: International Business Machines Corporation

20140087558 - Methods of forming memory cells; and methods of forming vertical structures: Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed... Agent: Micron Technology, Inc.

20140087559 - Semiconductor structure and manufacturing method of the same: A method for forming a semiconductor structure and a method for patterning a dielectric layer are provided. The method comprises following steps. An upper cap layer is formed on and physically contacted with a dielectric layer. The dielectric layer has a dielectric thickness having a range of 1000 Ř5000 Å.... Agent: United Microelectronics Corp.

20140087560 - Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method: m

20140087561 - Method and apparatus for substrate transfer and radical confinement: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more... Agent: Applied Materials, Inc.

20140087562 - Method for processing silicon substrate and method for producing charged-particle beam lens: A method for processing a silicon substrate includes forming a mask layer on the silicon substrate; forming a hole is farmed in the silicon substrate by alternately repeating (i) an etching step in which plasma etching is performed in a thickness direction of the silicon substrate using the mask layer... Agent: Canon Kabushiki Kaisha

20140087563 - Method for positioning spacers in pitch multiplication: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are... Agent: Micron Technology, Inc.

20140087564 - Plasama processing apparatus and plasma processing method: Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to place a substrate thereon, a purge gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma,... Agent: Tokyo Electron Limited

20140087565 - Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer readable recording medium: A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube... Agent: Hitachi Kokusai Electric Inc.

20140087566 - Pattern formation method: A pattern formation method comprises a process of forming a resist pattern with an opening that exposes a first region of a glass film arranged on a substrate through a base film; a process of forming a neutralization film above the glass film; a process of forming a directed self-assembly... Agent: Kabushiki Kaisha Toshiba

20140087567 - Substrate processing apparatus and method of manufacturing semiconductor device: Provided is a substrate processing apparatus including: a substrate mounting portion provided in a process chamber and capable of mounting a plurality of substrates in a circumferential direction; a rotating mechanism that rotates the substrate mounting portion at a predetermined angular velocity; dividing structures provided in a radial form from... Agent: Hitachi Kokusai Electric Inc.

20140087568 - Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of cleaning an interior of a process chamber by supplying a cleaning gas into the process chamber after a process of forming a thin film on a substrate in the process chamber is performed, including alternately repeating changing a pressure in the process chamber from a first pressure... Agent: Hitachi Kokusai Electric Inc.

  
03/20/2014 > 98 patent applications in 72 patent subcategories.

20140080227 - Method of manufacturing semiconductor device: According to one embodiment, a method of manufacturing a semiconductor device includes forming a silicon nitride layer on a metal layer, forming a plasma of a gas mixture of carbon oxide and oxygen, and selectively etching the silicon nitride layer with respect to the metal layer by using the plasma... Agent:

20140080228 - Semiconductor device and method of manufacturing the semiconductor device: A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping... Agent: Renesas Electronics Corporation

20140080229 - Adaptive semiconductor processing using feedback from measurement devices: A semiconductor processing device and a method of operating the same. The method may include measuring at least one property of a semiconductor wafer and determining a recipe for processing the semiconductor wafer based on the at least one property. The semiconductor wafer may be processed with a plurality of... Agent: Stmicroelectronics, Inc.

20140080230 - Apparatus and method for evaluating optical properties of led and method for manufacturing led device: An optical property evaluation apparatus includes: a light conversion filter converting light emitted from an LED chip or a bare LED package, which is to be evaluated, into a different wavelength of light, and emitting a specific color of light; and an optical property measurement unit receiving the specific color... Agent: Samsung Electronics Co., Ltd.

20140080231 - Method for manufacturing light emitting elements and device for manufacturing light emitting elements: A manufacturing method of white-light emitting elements that is one example of the present invention is a manufacturing method of a white-light emitting element with the light emitting diode chip covered with the fluorescent-body-containing resin member that has been formed with the fluorescent-body-containing resin material containing a resin and fluorescent... Agent: Panasonic Corporation

20140080232 - Peak-based endpointing for chemical mechanical polishing: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current... Agent: Applied Materials, Inc.

20140080233 - Combinatorial optimization of interlayer parameters: The embodiments describe methods and apparatuses for combinatorial optimization of interlayer parameters for capacitor stacks. The capacitor stacks may include a substrate, an insulating layer disposed on the substrate, a ruthenium disposed electrode on the insulating layer, and an interlayer disposed on the ruthenium electrode, where the interlayer is configured... Agent: Intermolecular, Inc.

20140080234 - Light emitting diodes with smooth surface for reflective electrode: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode... Agent: Toshiba Techno Center Inc.

20140080235 - Method for manufacturing semiconductor light emitting device: A method for manufacturing a semiconductor light emitting device comprises a sealing step of sealing a semiconductor chip fixed on a lead frame with a sealing member, a removal step of removing the sealing member until a surface of the semiconductor chip becomes exposed, an irregularity formation step of forming... Agent: Toyoda Gosei Co., Ltd.

20140080237 - Method of manufacturing organic electroluminescent display: In a method of manufacturing an organic electroluminescent display, when a substrate including first and second pixel areas is prepared, a first mask including openings is disposed on the substrate to respectively correspond to the first and second pixel areas, and a second mask including an opening corresponding to the... Agent: Samsung Display Co., Ltd.

20140080236 - Multichip light emitting diode (led) and method of manufacture: The present invention provides a multichip LED and method of manufacture in which white light is produced. A plurality of electrically interconnected LED chips is selected for conversion of light to white light. The LED chips comprise: a blue LED chip, a red LED chip, a green LED chip, and... Agent: Lightizer Korea Co.

20140080238 - Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver: At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140080239 - Patterned substrate for light emitting diode and light emitting diode employing the same: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular... Agent: Seoul Opto Device Co., Ltd.

20140080241 - Manufacturing method of organic el element: A method of manufacturing an organic EL element having a pair of electrodes and an organic functional layer disposed therebetween, the pair of electrodes consisting of an upper electrode and a lower electrode, comprising: forming the upper electrode on the organic functional layer by a magnetron sputtering method with a... Agent: Panasonic Corporation

20140080240 - Method for manufacturing semiconductor device: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a... Agent: Kabushiki Kaisha Toshiba

20140080242 - Method for manufacturing package structure with micro-electromechanical element: A package structure includes a micro-electromechanical element having a plurality of electrical contacts; a package layer enclosing the micro-electromechanical element and the electrical contacts, with a bottom surface of the micro-electromechanical element exposed from a lower surface of the package layer; a plurality of bonding wires embedded in the package... Agent: Siliconware Precision Industries Co., Ltd.

20140080243 - Method of manufacturing radiation detector: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the... Agent: Shimadzu Corporation

20140080244 - Method for manufacturing optical image stabilizer employing scratch drive actuator: A method for an optical image stabilizer including: providing an SOI wafer substrate which has a plurality of cells, the SOI wafer substrate including an insulating layer, and first and second silicon layers disposed on both sides of the insulating layer; forming scratch drive arrays and supporting members on each... Agent: Samsung Electro-mechanics Co., Ltd.

20140080245 - Method for fabricating optical micro structure and applications thereof: A method for fabricating an image sensor, wherein the method comprises steps as follows: Firstly, a transparent substrate is formed on a working substrate. Pluralities of micro lens are formed in the transparent substrate, wherein the lenses have a refraction ratio differing from that of the transparent substrate. Subsequently, a... Agent: United Microelectronics Corporation

20140080246 - Manufacturing method for solar cell: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed... Agent: Sanyo Electric Co., Ltd.

20140080247 - Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device: A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of... Agent: Sumco Corporation

20140080248 - Optoelectronic devices and applications thereof: In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the... Agent: Wake Forest University

20140080249 - Heat treatment by injection of a heat-transfer gas: A heat treatment of a precursor that reacts with temperature, and that comprises in particular the steps of: preheating or cooling a heat-transfer gas to a controlled temperature, and injecting the preheated or cooled gas over the precursor. Advantageously, besides the temperature of the heat-transfer gas, the following are also... Agent: Electricite De France

20140080250 - Method of fabricating high efficiency cigs solar cells: A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors... Agent: Intermolecular, Inc.

20140080251 - Hybrid polysilicon heterojunction back contact cell: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on... Agent:

20140080252 - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus: A solid-state imaging device including a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear... Agent: Sony Corporation

20140080254 - Fabricating method of thin film transistor, fabricating method of array substrate and display device: An embodiment of the present invention provides a fabricating method of a thin film transistor, a fabricating method of an array substrate, and a display device. The fabricating method of a thin film transistor comprises: forming a gate electrode on a substrate; and forming a gate insulating layer, a semiconductor... Agent: Boe Technology Group Co., Ltd.

20140080253 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140080258 - Compliant printed circuit semiconductor package: A method of making a package for a semiconductor device having electrical terminals. At least one semiconductor device is located on a substrate. A first dielectric layer is printed on at least a portion of the semiconductor device to include first recesses aligned with a plurality of the electrical terminals.... Agent: Hsio Technologies, LLC

20140080256 - Method for manufacturing package structure with electronic component: A fabrication method of manufacturing a package a plurality of electronic components in an encapsulation body, firstly, mounting the plurality of electronic components and one ends of a plurality of metal resilient units on a substrate. After that, the plurality of electronic components and the plurality of metal resilient units... Agent: Ambit Microsystems (zhongshan) Ltd.

20140080257 - Method for non-planar chip assembly: Methods and apparatuses for assembly of a non-planar device based on curved chips are described. Slots may be created as longitudinal openings in the chips to reduce bending stresses to increase allowable degrees of deformation of the chips. The chips may be deformed to a desired deformation within the allowable... Agent:

20140080255 - Ultra-low power swnt interconnects for sub-threshold circuits: Ultra-low power single metallic single-wall-nano-tube (SWNT) interconnects for sub-threshold circuits are provided. According to some embodiments, an interconnect structure for use in electronic circuits can generally comprise a first substrate, a second substrate, and an interconnect. The first substrate can be spaced apart from the second substrate. The interconnect is... Agent: Georgia Tech Research Corporation

20140080259 - Manufacturing method for layered chip packages: In a manufacturing method for layered chip packages, a layered substructure with at least one additional package joined thereto is used to produce a plurality of layered chip packages. The layered substructure includes a plurality of main bodies to be separated from each other later. Each main body includes: a... Agent:

20140080261 - Method for fabricating a chip having a water-repellent obverse surface and a hydrophilic reverse surface: In order to provide a novel method for producing a chip having a water-repellent obverse surface and a hydrophilic reverse surface, the characteristic of the present disclosure lies in that the obverse surface of the chip having a hydroxyl group is brought into contact with an organic solvent in which... Agent: Panasonic Corporation

20140080260 - Method of manufacturing semiconductor device: To provide a semiconductor device having an improved quality. The semiconductor device of the invention has a tape substrate having a semiconductor chip thereon, a plurality of land pads placed around the semiconductor chip, a plurality of wires for electrically coupling the electrode pad of the semiconductor chip to the... Agent: Renesas Electronics Corporation

20140080262 - Method for producing the same: A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the... Agent: Fuji Electric Co., Ltd.

20140080264 - Method for fabricating leadframe-based semiconductor package: A semiconductor package and a method for fabricating the same are provided. A leadframe including a die pad and a plurality of peripheral leads is provided. A carrier, having a plurality of connecting pads formed thereon, is attached to the die pad, wherein a planar size of the carrier s... Agent: Siliconware Precision Industries Co., Ltd

20140080263 - Semiconductor packaging method using connecting plate for internal connection: A semiconductor package with connecting plate for internal connection comprise: a plurality of chips each having a plurality of contact areas on a top surface; one or more connecting plates having a plurality of electrically isolated connecting plate portions each connecting a contact area of the semiconductor chips. The method... Agent: Alpha And Omega Semiconductor Incorporated

20140080265 - Fabrication method of carrier-free semiconductor package: A carrier-free semiconductor package includes a circuit structure having an insulating layer and a circuit layer embedded in the insulating layer and having a plurality of conductive traces and RF (radio frequency) traces, a chip disposed on a first surface of the insulating layer and electrically connected to the conductive... Agent: Siliconware Precision Industries Co., Ltd

20140080266 - Semiconductor package and method of manufacturing the same: Disclosed herein are a semiconductor package and a method of manufacturing the same, the semiconductor package including: a molding member having a cavity formed therein; a device mounted in the cavity; an insulating member formed inside the cavity and on and/or beneath the molding member and the device; a circuit... Agent: Samsung Electro-mechanics Co., Ltd.

20140080267 - Method of making a thin film transistor device: A method of making a thin film transistor device includes: forming a semiconductor layer, a dielectric layer, and a gate-forming layer on the dielectric layer to define a layered structure, forming a gray scale photoresist pattern on the gate-forming layer, stripping the gray scale photoresist pattern isotropically to cause removal... Agent:

20140080268 - Fabricating photonics devices fully integrated into a cmos manufacturing process: Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics... Agent: International Business Machines Corporation

20140080269 - Fabricating photonics devices fully integrated into a cmos manufacturing process: Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics... Agent: International Business Machines Corporation

20140080270 - Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane: A backplane includes: a substrate, a pixel electrode, which includes a transparent conductive material, on the substrate, a capacitor first electrode formed on the same layer as the pixel electrode, a first protection layer covering the capacitor first electrode and an upper edge of the pixel electrode, a gate electrode... Agent: Samsung Display Co., Ltd.

20140080271 - Method of forming thin film transistor: A method of forming TFT is provided. The TFT includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed... Agent: Au Optronics Corp.

20140080272 - Continuous mesh three dimensional non-volatile storage with vertical select devices: A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all... Agent: Sandisk 3d LLC

20140080273 - Vertical-type semiconductor devices and methods of manufacturing the same: In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall... Agent: Samsung Electronics Co., Ltd.

20140080274 - Method of forming channel layer of electric device and method of manufacturing electric device using the same: A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an... Agent: Snu R&db Foundation

20140080275 - Multigate finfets with epitaxially-grown merged source/drains: Method of forming multi-gate finFETs with epitaxially-grown merged source/drains. Embodiments of the invention may include forming a plurality of semiconductor fins joined by a plurality of inter-fin semiconductor regions, depositing a sacrificial gate over a center portion of each of the plurality of fins, forming a first merge layer over... Agent: International Business Machines Corporation

20140080276 - Technique for forming a finfet device: A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on at least one surface of the structure. In some embodiments, a conformal deposition of material is performed on the three-dimensional structure. Subsequently, an ion implant is performed on at least... Agent:

20140080277 - Compound semiconductor device and manufacturing method thereof: A compound semiconductor device including an electron transport layer that is formed on a substrate and includes a III-V nitride compound semiconductor, a gate insulating film that is positioned above the compound semiconductor layer, and a gate electrode that is positioned on the gate insulating film. The gate insulating film... Agent: Fujitsu Limited

20140080279 - Multilevel mixed valence oxide (mvo) memory: Various embodiments include a memory device and methods of forming the same. The memory device can include an electrode coupled to one or more memory elements, to store information. The electrode may comprise a number of metals, where a first one of the metals has a Gibbs free energy for... Agent: Micron Technology, Inc.

20140080278 - Semiconductor device having a resistor and methods of forming the same: In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate... Agent:

20140080280 - Semiconductor structure and method for making same: An embodiment relates to a method of forming a semiconductor structure, comprising: forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a third semiconductor layer over the second semiconductor layer; forming an opening in the first, second and third semiconductor layers; forming a... Agent:

20140080281 - Method of fabricating isolated capacitors and structure thereof: A structure and method is provided for fabricating isolated capacitors. The method includes simultaneously forming a plurality of deep trenches and one or more isolation trenches surrounding a group or array of the plurality of deep trenches through a SOI and doped poly layer, to an underlying insulator layer. The... Agent: International Business Machines Corporation

20140080284 - High temperature ald process of metal oxide for dram applications: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon... Agent: Intermolecular, Inc.

20140080283 - Interfacial materials for use in semiconductor structures and related methods: A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material, forming a continuous interfacial material over the high-k dielectric material, and forming a conductive material over the continuous interfacial material. Additional methods and semiconductor structures are also disclosed.... Agent: Micron Technology, Inc.

20140080282 - Leakage reduction in dram mim capacitors: A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high-k phase of a subsequently deposited dielectric layer. The high-k dielectric layer includes a doped material that can be crystallized after a... Agent: Intermolecular, Inc.

20140080285 - Method and apparatus for forming shallow trench isolation structures having rounded corners: Methods for rounding the bottom corners of a shallow trench isolation structure are described herein. Embodiments of the present invention provide a method comprising forming a first masking layer on a sidewall of an opening in a substrate, removing, to a first depth, a first portion of the substrate at... Agent: Marvell World Trade Ltd.

20140080286 - Method for producing a semiconductor body: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a... Agent: Osram Opto Semiconductors Gmbh

20140080288 - Laser processing method: A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P... Agent: Hamamatsu Photonics K.k.

20140080287 - Method for singulating a component composite assembly: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into... Agent: Osram Opto Semiconductors Gmbh

20140080289 - Method of forming gettering layer: Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width... Agent: Disco Corporation

20140080291 - Method for producing a graphene nano-ribbon: A method for producing a graphene nanoribbon is disclosed. This production method includes the steps of: forming a crystalline catalytic metal layer composed of copper or nickel on a (110) plane or a (112) plane of a MgAl2O4 single-crystal substrate or a MgO single-crystal substrate, with a thickness of the... Agent: Panasonic Corporation

20140080292 - Method of producing semiconductor device: A semiconductor device includes a semiconductor layer (1) containing GaN and an electrode. The electrode includes an electrode main body (6), a connection-use electrode (8) containing Al and formed at a position farther from the semiconductor layer (1) than the electrode main body (6), and a barrier layer (7) formed... Agent: Sumitomo Electric Industries, Ltd.

20140080290 - Method of selective growth without catalyst on a semiconducting structure: A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto,... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20140080293 - Solar cells having nanowires and methods of fabricating nanowires: A solar cell includes a plurality of nanowires arranged such that diameters of the nanowires sequentially increase in a first direction along a path of incident light. In a method of forming nanowires, a catalyst layer is formed on a substrate, a plurality of nanoparticles are formed by thermally processing... Agent: Samsung Electronics Co., Ltd.

20140080294 - Method for manufacturing a semiconductor structure: According to an embodiment, a method for manufacturing a semiconductor structure includes providing a first monocrystalline semiconductor portion having a first lattice constant in a reference direction and forming a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice... Agent: Infineon Technologies Austria Ag

20140080295 - Surface doping and bandgap tunability in hydrogenated graphene: A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.... Agent: The Government Of The Us, As Represented By The Secretary Of The Navy

20140080296 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, and etching sides of the gate pattern using a first wet-etching process to form a first recess. The first wet-etching process includes using an etchant containing a first chemical substance including a hydroxyl functional group... Agent:

20140080297 - Nonvolatile semiconductor memory device and method of fabricating the same: According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body,... Agent: Kabushiki Kaisha Toshiba

20140080298 - Non-volatile memory devices and methods of manufacturing the same: A non-volatile memory device includes a field region that defines an active region in a semiconductor substrate, a floating gate pattern on the active region, a dielectric layer on the floating gate pattern and a control gate on the dielectric layer. The control gate includes a first conductive pattern that... Agent:

20140080299 - Processes for nand flash memory fabrication: Narrow word lines are formed in a NAND flash memory array using a double patterning process in which sidewall spacers define word lines. Sidewall spacers also define edges of select gates so that spacing between a select gate and the closest word line is equal to spacing between adjacent word... Agent: Sandisk Technologies Inc.

20140080300 - Multi-layer circuit substrate fabrication method providing improved transmission line integrity and increased routing density: An integrated circuit substrate is designed and fabricated with a selectively applied transmission line reference plane metal layer to achieve signal path shielding and isolation, while avoiding drops in impedance due to capacitance between large diameter vias and the transmission line reference plane metal layer. The transmission line reference plane... Agent: International Business Machines Corporation

20140080301 - Fabricating a semiconductor die having coefficient of thermal expansion graded layer: A method of fabricating a semiconductor die includes circuit elements configured to provide a circuit function. A substrate including a bottomside and a topside is provided. At least one multi-layer structure is formed. The forming is done by depositing a coefficient of thermal expansion (CTE) graded layer comprising at least... Agent:

20140080302 - Methods of manufacturing a semiconductor device: A method of manufacturing a semiconductor device including forming a first sacrificial layer on a substrate, the first sacrificial layer including a conductive material, forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer including an insulating material, patterning the second sacrificial layer and the first... Agent: Samsung Electronics Co., Ltd.

20140080303 - Methods of manufacturing semiconductor structures and devices including nanotubes, and semiconductor structures, devices, and systems fabricated using such methods: A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further, a plurality of nanotubes may be formed generally within each of the plurality of recesses and the plurality of nanotubes may be substantially surrounded... Agent: Micron Technology, Inc.

20140080304 - Integrated tool for semiconductor manufacturing: An integrated tool to reduce defects in manufacturing a semiconductor device by reducing queue times during a manufacturing process. The integrated tool may include at least one a polishing tool comprising at least one polishing module and at least one deposition tool comprising at least one deposition chamber. At least... Agent: Stmicroelectronics, Inc.

20140080305 - Double patterning process: A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness... Agent: Nanya Technology Corporation

20140080306 - Method of forming fine patterns: A method of forming a fine pattern comprises depositing a modifying layer on a substrate. A photoresist layer is deposited on the modifying layer, the photoresist layer having a first pattern. The modifying layer is etched according to the first pattern of the photoresist layer. A treatment is performed to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140080307 - Pattern-forming method and method for manufacturing semiconductor device: A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching... Agent: Tokyo Electron Limited

20140080309 - Differential silicon oxide etch: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine... Agent: Applied Materials, Inc.

20140080308 - Radical-component oxide etch: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch... Agent: Applied Materials, Inc.

20140080310 - Silicon-carbon-nitride selective etch: A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions... Agent: Applied Materials Inc.

20140080311 - Plasma processing method: A plasma processing method includes holding a target substrate on a holding table installed in a processing chamber; generating a microwave for plasma excitation; supplying a reactant gas having dissociation property; generating an electric field by introducing the microwave via a dielectric plate disposed to face the holding table; setting... Agent: Tokyo Electron Limited

20140080312 - Substrate processing method, substrate processing apparatus, and storage medium: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is... Agent:

20140080313 - Etching composition and method for etching a semiconductor wafer: An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the... Agent: Industrial Technology Research Institute

20140080314 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following... Agent: Hitachi Kokusai Electric Inc.

20140080315 - Method of forming laminated film and forming apparatus thereof: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the... Agent: Tokyo Electron Limited

20140080316 - Methods of forming gate dielectric material: A method of fabricating a semiconductor device includes contacting water with a silicon oxide layer. The method further includes diffusing an ozone-containing gas through water to treat the silicon oxide layer. The method further includes forming a dielectric layer over the treated silicon oxide layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140080317 - Mehod of manufacturing a semiconductor device and substrate processing apparatus: A stress of a film formed on a substrate can be reduced. A method of manufacturing a semiconductor device includes: forming a film on the substrate by supplying a process gas to the substrate while heating the substrate to a first temperature; controlling a stress to the film by changing... Agent: Hitachi Kokusai Electric Inc.

20140080318 - Method of manufacturing a semiconductor device, substrate processing apparatus and recording medium: Provided are: forming a thin film made of a specific element alone on a substrate by performing a specific number of times a cycle of: supplying a first source to the substrate, the first source containing the specific element and a halogen-group; and supplying a second source to the substrate,... Agent:

20140080319 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited... Agent: Hitachi Kokusai Electric Inc.

20140080320 - Semiconductor processing system including vaporizer and method for using same: A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing... Agent: Tokyo Electron Limited

20140080321 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to... Agent: Hitachi Kokusai Electric Inc.

20140080322 - Emissivity profile control for thermal uniformity: A substrate for processing in a heating system is disclosed. The substrate includes a bottom portion for absorbing heat from a radiating heat source, the bottom portion having a first region having a first emissivity and a second region having a second emissivity less than the first emissivity. The first... Agent: Intermolecular, Inc.

20140080323 - Method and apparatus for forming a straight line projection on a semiconductor substrate: An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an... Agent: Excico France

20140080324 - Multi-station sequential curing of dielectric films: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former... Agent: Novellus Systems, Inc.

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