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Semiconductor device manufacturing: process

20120122247 - Electronic device including a magneto-resistive memory device and a process for forming the electronic device: A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include... Agent: Everspin Technologies, Inc.

20120122246 - Method for manufacturing magnetic memory chip device: A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability... Agent: Renesas Electronics Corporation

20120122248 - Method of manufacturing semiconductor device: According to one embodiment, there is provided a method of manufacturing a semiconductor device having a buffer circuit. In the method, a plurality of semiconductor elements is formed on a semiconductor substrate. The plurality of semiconductor elements are connected in parallel to each other in the buffer circuit. In the... Agent: Kabushiki Kaisha Toshiba

20120122249 - Dopant marker for precise recess control: A semiconductor device is formed by implanting recess markers in a material during deposition and using the recess markers during etching of the material for precise in-situ removal rate definition and removal homogeneity-over-radius definition. An embodiment includes depositing a layer of material on a substrate, implanting first and second dopants... Agent: Globalfoundries Inc.

20120122250 - Apparatus and method for manufacturing led package: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state... Agent: Samsung Led Co., Ltd.

20120122251 - Stacked type semiconductor memory device and chip selection circuit: A stacked type semiconductor memory device of having a structure in which a plurality of semiconductor chips is stacked and a desired semiconductor chip can be selected by assigning a plurality of chip identification numbers different from each other are individually assigned to the plurality of semiconductor chips comprising: a... Agent: Elpida Memory Inc.

20120122253 - Apparatus and method of aligning and positioning a cold substrate on a hot surface: Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat... Agent: Applied Materials, Inc.

20120122252 - Method for inspecting substrate, substrate inspection apparatus, exposure system, and method for producing semiconductor device: There is provided a method for inspecting a substrate including: irradiating an illumination light onto a first surface or a second surface opposite to the first surface, of a substrate in which a pattern having a periodicity and extending from the first surface to an inside of the substrate is... Agent:

20120122255 - White light emitting diode and method of manufacturing the same: Provided is a white LED including a reflector cup; an LED chip mounted on the bottom surface of the reflector cup; transparent resin surrounding the LED chip; a phosphor layer formed on the transparent resin; and a light transmitting layer that is inserted into the surface of the phosphor layer... Agent: Samsung Led Co., Ltd.

20120122254 - White light-emitting diode package structure for simplifying package process and method for making the same: A white light-emitting diode package structure for simplifying package process includes a substrate unit, a light-emitting unit, a phosphor unit and a conductive unit. The light-emitting unit is disposed on the substrate, and the light-emitting unit has a positive conductive layer and a negative conductive layer. The phosphor unit has... Agent: Harvatek Corporation

20120122256 - Method for manufacturing light emitting diode: A method for manufacturing light emitting diodes includes steps of: providing a base have an upper conductive layer and a lower conductive layer on a top face and a bottom face thereof, respectively; forming a plurality of through holes in the base; defining a plurality of grooves to divide the... Agent: Advanced Optoelectronic Technology, Inc.

20120122257 - Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing... Agent: Sony Corporation

20120122258 - Method for manufacturing semiconductor light emitting device: One embodiment provides a method for manufacturing a semiconductor light emitting device, including: forming a semiconductor light emitting device wafer, by: forming a plurality of semiconductor layers on a principal surface of a substrate; and forming a P-type semiconductor layer on the semiconductor layers as an uppermost layer; and forming... Agent: Kabushiki Kaisha Toshiba

20120122259 - Method of manufacturing mems devices providing air gap control: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at... Agent: Qualcomm Mems Technologies, Inc.

20120122260 - Array of alpha particle sensors: An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation... Agent: International Business Machines Corporation

20120122261 - cmos imager photodiode with enhanced capacitance: A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The... Agent: International Business Machines Corporation

20120122262 - Thin film solar cell module and method of manufacturing the same: A thin film solar cell module includes a front substrate; a plurality of thin film solar cells disposed on the front substrate; a rear substrate disposed on the thin film solar cells; a plurality of inter-connection terminals electrically connected to the thin film solar cells, respectively, and exposed to an... Agent:

20120122263 - Method for producing photovoltaic cell: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on... Agent: Hitachi Chemical Company, Ltd.

20120122264 - Method for producing photovoltaic cell: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on... Agent: Hitachi Chemical Company, Ltd.

20120122265 - Method for producing photovoltaic cell: The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder... Agent: Hitachi Chemical Company, Ltd.

20120122266 - Porous lift-off layer for selective removal of deposited films: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A film is applied over a patterned porous layer, the layer comprising openings typically larger than the film thickness. The porous material and the film are then removed from areas where film is not intended. The... Agent: 1366 Technologies Inc.

20120122267 - Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates: A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the... Agent:

20120122268 - Selenization of precursor layer containing culns2 nanoparticles: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1−y)2, CuGaS2, CuGa(Sy,Se1−y)2, Cu(InxGa1−x)S2, and Cu(InxGa1−x)(Sy,Se1−y)2 nanoparticles and combinations... Agent: Purdue Research Foundation

20120122269 - Plasma processing apparatus and method for manufacturing photovoltaic element using same: A method of manufacturing a photovoltaic element (710) capable of inhibiting the thicknesses and the qualities of formed films from being nonuniform includes steps of forming a substrate-side electrode (712), forming a photoelectric conversion layer (713, 714) with a plasma processing apparatus (1) including a first electrode (3) and a... Agent: Sanyo Electric Co., Ltd.

20120122273 - Direct current ion implantation for solid phase epitaxial regrowth in solar cell fabrication: An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing.... Agent:

20120122270 - Etching method for use with thin-film photovoltaic panel: The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional... Agent: E. I. Du Pont De Nemours And Company

20120122271 - Etching method to increase light transmission in thin-film photovoltaic panels: e

20120122272 - High-throughput flat top laser beam processing for back contact solar cells: Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and... Agent: Solexel, Inc.

20120122274 - Anisotropic semiconductor film and method of production thereof: The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid... Agent: Carben Semicon Limited

20120122275 - Methods of fabricating organic thin film transistors: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using... Agent:

20120122276 - Thermal evaporation apparatus, use and method of depositing a material: A thermal evaporation apparatus for depositing of a material on a substrate is described. The apparatus can comprise material storage means; heating means to generate a vapour of the material in the material storage means; vapour outlet means comprising a vapour receiving pipe having vapour outlet passages, and emission reducing... Agent:

20120122277 - Semiconductor device and method for manufacturing the semiconductor device: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120122278 - Method of manufacturing semiconductor package board: Disclosed herein is a method of method of manufacturing a semiconductor package board, including: providing a substrate including a connection part formed on one side thereof, the connection part being provided thereon with a solder layer; disposing a conductive heat generator equipped with current wiring on the solder layer; applying... Agent: Samsung Electro-mechanics Co., Ltd.

20120122279 - System for clamping heat sink: A system for clamping a heat sink that prevents excessive clamping force is provided. The system may include a heat sink, a semiconductor device, a printed circuit) board, and a cover. The semiconductor device may be mounted onto the circuit board and attached to the cover. The heat sink may... Agent: Harman International Industries, Incorporated

20120122280 - Antifuse structure for in line circuit modification: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric... Agent: International Business Machines Corporation

20120122281 - Method for fabricating a gan-based thin film transistor: A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask... Agent: National Chiao Tung University

20120122282 - Method of manufacturing semiconductor devices: A method of manufacturing semiconductor devices includes forming a plurality of lines arranged in a direction over a semiconductor substrate, forming mask patterns over the semiconductor substrate wherein the mask patterns intersect the lines, and forming junctions in the semiconductor substrate between the lines by performing an ion implantation process.... Agent: Hynix Semiconductor Inc.

20120122285 - Memory device having trapezoidal bitlines and method fo fabricating same: A memory device and a method of fabrication are provided. The memory device includes a semiconductor substrate and a charge trapping dielectric stack disposed over the semiconductor substrate. A gate electrode is disposed over the charge trapping dielectric stack, where the gate electrode electrically defines a channel within a portion... Agent:

20120122284 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures... Agent:

20120122283 - Methods of manufacturing a semiconductor device: A method includes forming a plurality of dummy gate structures on a substrate, each dummy gate structure including a dummy gate electrode and a dummy gate mask, forming a first insulation layer on the substrate and the dummy gate structures to fill a first space between the dummy gate structures,... Agent:

20120122286 - Methods of manufacturing semiconductor device: In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top... Agent: Samsung Electronics Co., Ltd

20120122287 - Localized compressive strained semiconductor: One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a second portion bonded to the substrate, and... Agent:

20120122288 - Method of fabricating a silicide layer: During a salicide process, and before a second thermal treatment is performed to a silicide layer of a semiconductor substrate, a thermal conductive layer is formed to cover the silicide layer. The heat provided by the second thermal treatment can be conducted to the silicide layer uniformly through the thermal... Agent:

20120122289 - Semiconductor device manufacturing method: Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a... Agent: Tokyo Electron Limited

20120122292 - Methods of forming a non-volatile resistive oxide memory array: A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches... Agent: Micron Technology

20120122291 - Nonvolatile memory elements: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a... Agent: Intermolecular, Inc.

20120122290 - Systems and methods for fabricating self-aligned memory cell: Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnO3 (PCMO) layer above the insulator and the metal... Agent: 4d-s Pty Ltd.

20120122293 - Method of forming mim capacitor structure in feol: A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upper surface of the first capacitor plate; a capacitor dielectric layer formed... Agent: International Business Machines Corporation

20120122294 - Method of manufacturing semiconductor device: In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part,... Agent: Kabushiki Kaisha Toshiba

20120122295 - Semiconductor device with recess and fin structure: The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation... Agent: 658868 N.b. Inc.

20120122296 - Methodology for wordline short reduction: The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) providing a plurality of SASTIs with a plurality of first POLY cells deposited thereon; and (b) depositing a first fill-in material having a relatively high etching rate oxide-like material in the... Agent: Macronix International Co., Ltd.

20120122297 - Method of fabricating a nonvolatile memory device: A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer... Agent:

20120122298 - Method for manufacturing semiconductor substrate: Defects in a semiconductor substrate are reduced. A semiconductor substrate with fewer defects is manufactured with high yield. Further, a semiconductor device is manufactured with high yield. A semiconductor layer is formed over a supporting substrate with an oxide insulating layer interposed therebetween, adhesiveness between the supporting substrate and the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120122299 - Method for forming substrate with buried insulating layer: A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate... Agent: Shanghai Simgui Technology Co., Ltd.

20120122300 - Film stress management for mems through selective relaxation: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.... Agent: Lucent Technologies Inc.

20120122302 - Apparatus and methods for deposition of silicon carbide and silicon carbonitride films: Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C.... Agent: Applied Materials, Inc.

20120122301 - Method of manufacturing gan-based film: A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal... Agent: Sumitomo Electric Industries, Ltd.

20120122303 - Semiconductor structure having wide and narrow deep trenches with different materials: Disclosed is a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a first trench of a first width and a second trench of a second width in the semiconductor layer; depositing a layer of first material which conforms to a wall of the... Agent: International Business Machines Corporation

20120122304 - System and method for transferring substrates in large scale processing of cigs and/or cis devices: The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first... Agent: Stion Corporation

20120122305 - Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures: An electronic device includes a drift layer having a first conductivity type, a buffer layer having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P-N junction with the drift layer, and a junction termination extension region having the second conductivity type in... Agent:

20120122306 - Diffusing agent composition, and method for forming an impurity diffusion layer: A diffusing agent composition contains a condensation product (A) and an impurity diffusion component (B). The condensation product (A) is a reaction product yielded by hydrolyzing an alkoxysilane. The impurity diffusion component (B) is a monoester or diester of phosphoric acid, or a mixture thereof.... Agent: C/o Tokyo Ohka Kogyo Co., Ltd.

20120122307 - Method of manufacturing semiconductor devices: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart from each other, the second trench surrounding the first trenches, the second trench being wider than the first trench.... Agent: Fuji Electric Co., Ltd.

20120122308 - Method of manufacturing junction barrier schottky diode with dual silicides: An integrated circuit, including a junction barrier Schottky diode, has an N type well, a P-type anode region in the surface of the well, and an N-type Schottky region in the surface of the well and horizontally abutting the anode region. A first silicide layer is on and makes a... Agent:

20120122309 - Method of fabricating semiconductor device using a work function control film: A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of... Agent: Samsung Electronics Co., Ltd.

20120122310 - Method of manufacturing semiconductor device: In one embodiment, a method of manufacturing a semiconductor device includes forming a first to fourth films over a semiconductor substrate. The method further includes patterning the fourth film to form sparse and dense portions in which patterns of the fourth film are sparse and dense, respectively, and etching the... Agent:

20120122311 - Metal layer formation method for diode chips/wafers: An electroless plated metal layer formation method for forming a metal layer on a diode chip/wafer for wire bonding is disclosed to include the step of forming a metal base material on a diode chip/wafer adapted for inducing a reduction system to cause a catalytic reaction at location(s) where the... Agent:

20120122312 - Methods for forming planarized hermetic barrier layers and structures formed thereby: Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a conductive material in an interconnect opening within an interlayer dielectric material that is disposed on a substrate, forming a low density dielectric material on a surface of the dielectric layer and on a... Agent:

20120122313 - Metal precursors for deposition of metal-containing films: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the... Agent: L'air Liquide Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude

20120122314 - Mems element: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to... Agent: Nxp B.v.

20120122315 - Self-aligned devices and methods of manufacture: A method includes forming patterned lines on a substrate having a predetermined pitch. The method further includes forming spacer sidewalls on sidewalls of the patterned lines. The method further includes forming material in a space between the spacer sidewalls of adjacent patterned lines. The method further includes forming another patterned... Agent: International Business Machines Corporation

20120122316 - Method for surface treatment of a wafer: m

20120122317 - Pulsed laser deposition with exchangeable shadow masks: The invention relates to a device for pulsed laser deposition, which device comprises: a substrate mount with a substrate mounted thereon; a target mount with a target material mounted thereon and opposite of the substrate mount; a laser device for directing a laser beam on the target material; and a... Agent: Solmates B.v.

20120122318 - Substrate processing apparatus and method for manufacturing semiconductor device: The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas... Agent: Hitachi Kokusai Electric Inc.

20120122319 - Coating method for coating reaction tube prior to film forming process: Contamination of a substrate can be prevented or suppressed. A substrate processing apparatus includes a reaction tube having an inner space divided by a barrier wall into a film forming space and a plasma generating space. When a desired film is formed on a substrate placed inside the reaction tube,... Agent:

20120122320 - Method of processing low k dielectric films: Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described.... Agent: Applied Materials, Inc.

20120122321 - Thermal management and method for large scale processing of cis and/or cigs based thin films overlying glass substrates: thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality... Agent: Stion Corporation

20120115250 - Concave-convex pattern forming method and magnetic tunnel junction element forming method: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a... Agent: Kabushiki Kaisha Toshiba

20120115251 - Process for selectively patterning a magnetic film structure: Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof,... Agent: International Business Machines Corporation

20120115253 - Semiconductor apparatus: A method for manufacturing a semiconductor apparatus includes forming a semiconductor device on a principal surface of a substrate, in which the semiconductor device includes an interconnect layer, forming a buffer film which covers the semiconductor device and prevents diffusion of a magnetic material, and forming a magnetic shielding film... Agent: Renesas Electronics Corporation

20120115252 - Semiconductor device and method of manufacturing the same: Provided is a semiconductor device, including a silicon substrate, a first insulating film formed on the silicon substrate, a first conductive plug formed in an inside of a first contact hole of the first insulating film, an underlying conductive film having a flat surface formed on the first conductive plug... Agent: Fujitsu Semiconductor Limited

20120115254 - Heating plate with planar heater zones for semiconductor processing: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater elements made of... Agent: Lam Research Corporation

20120115255 - Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers: A semiconductor wafer processing and analysis apparatus (20) includes a processing micro chamber (22) for closely receiving a semiconductor wafer (27) therein. The chamber may be opened for loading and removing the semiconductor wafers and then closed for processing of the wafer wherein chemical reagents and other fluids are introduced... Agent:

20120115256 - Method and device for selectively adding timing margin in an integrated circuit: A method, system, and integrated circuit including selectively added timing margin. The method, for integrating statistical timing and automatic test pattern generation (ATPG) to selectively add timing margin in an integrated circuit, includes identifying, while a chip is in design, paths that are unable to be robustly tested “at speed”... Agent: International Business Machines Corporation

20120115257 - Film forming method and film forming apparatus: A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the... Agent: Fuji Electric Co., Ltd.

20120115258 - Methods for monitoring the amount of metal contamination in a process: Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.... Agent: Memc Electronic Materials, Inc.

20120115259 - Method for fabricating flexible electronic device and electronic device fabricated thereby: Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating... Agent:

20120115260 - Organic light emitting device and method for manufacturing the same: A top emission OLED includes a driving TFT including a channel region and source and drain electrodes. A power supply, a ground line, and a light emitting diode are electrically coupled to the TFT and an auxiliary electrode is electrically coupled to the ground line and to the source electrode... Agent: Lg Display Co., Ltd.

20120115263 - Chip-type led and method of manufacturing the same: An embodiment of the present invention has an insulating substrate in which a first concave hole for mounting an LED chip and a second concave hole for connecting a metallic small-gauge wire are formed, where a metallic sheet that serves as a first wiring pattern is formed at a portion... Agent: Sharp Kabushiki Kaisha

20120115262 - Laser assisted transfer welding process: A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp... Agent: Semprius, Inc.

20120115261 - Method for manufacturing light emitting device package and frame for manufacturing light emitting device package: A method for manufacturing a light emitting device package includes: preparing a base frame including an annular base part, at least a pair of lead parts extending to an inner side of the base part, and at least one support part extending to the inner side of the base part... Agent:

20120115265 - Display device and method of manufacturing the same: A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive layer and a first metal layer are orderly formed on the substrate. A conductive stack layer is formed within each of the TFT/pixel/gate-line regions and the end of... Agent: Au Optronics Corp.

20120115264 - Pixel element of liquid crystal display and method for producing the same: The present invention provides a method for forming a pixel element. The method comprises: forming a first patterned metal layer within the pixel area; forming an insulation layer on the first patterned metal layer; forming a semiconductor layer on the insulation layer; patterning the semiconductor layer to form bend seed... Agent:

20120115266 - Manufacturing method for organic optoelectronic thin film: Disclosed is a manufacturing method for an organic optoelectronic thin film comprising the steps of providing a substrate and a first electrode; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes polyethylene glycol (PEG); forming a conductive polymer layer on the first electrode; disposing the substrate and... Agent:

20120115268 - Laser liftoff structure and related methods: Light-emitting devices, and related components, systems, and methods associated therewith are provided.... Agent: Luminus Devices, Inc.

20120115267 - Method for fabricating light emitting device: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.... Agent:

20120115269 - Sacraficial layers made from aerogel for microelectromechanical systems (mems) device fabriaction processes: Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial... Agent: Honeywell International Inc.

20120115270 - Solid-state image pickup device and method of manufacturing same: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal... Agent: Sony Corporation

20120115271 - Low temperature sintering of dye-sensitised solar cells: This invention relates to the field of dye-sensitized solar cells and discloses a method for reducing the temperature necessary for sintering the metal oxide paste coating the electrode.... Agent: Bangor University

20120115272 - Production method and production device for solar battery: When a solar battery configured by laminating a p-type layer, an i-type layer and an n-type layer in this order is produced, an n-type microcrystalline silicon thin film is formed as an n-type layer under film forming conditions wherein a ratio of the flow rate of an n-type dopant-containing gas... Agent: Sanyo Electric Co., Ltd.

20120115273 - Manufacturing method of photoelectric conversion device: A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115274 - Plasma deposition of amorphous semiconductors at microwave frequencies: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave... Agent:

20120115275 - Forming photovoltaic conductive features from multiple inks: Photovoltaic conductive features and processes for forming photovoltaic conductive features are described. The process comprises (a) providing a substrate comprising a passivation layer disposed on a silicon layer; (b) depositing a surface modifying material onto at least a portion of the passivation layer; (c) depositing a composition comprising at least... Agent: Cabot Corporation

20120115276 - Amorphous oxide semiconductor and thin film transistor using the same: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and... Agent: Canon Kabushiki Kaisha

20120115277 - Multi-chip stacking method to reduce voids between stacked chips: A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface... Agent: Walton Advanced Engineering Inc.

20120115278 - Stacked semiconductor package without reduction in data storage capacity and method for manufacturing the same: A stacked semiconductor package includes a semiconductor chip module including at least two semiconductor chips with a semiconductor chip body having an upper surface, a lower surface, side surfaces coupling the upper surface and the lower surface, and a circuit part. The semiconductor chips include pads coupled to the circuit... Agent: Hynix Semiconductor Inc.

20120115279 - Chip-scale semiconductor die packaging method: A method of packaging one or more semiconductor dies is provided. The method includes: providing a first die having a circuit surface and a connecting surface; providing a chip-scale frame having an inside surface and an outside surface, the chip-scale frame having a well region having an opening in the... Agent: Semtech Corporation

20120115280 - Film for semiconductor and semiconductor device manufacturing method: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer... Agent:

20120115281 - Method of manufacturing semiconductor device: wherein X is a single bond, —CH2—, —S— or —O—; and R1 to R4, which may be the same as or different, are each —H or —CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions... Agent: Nitto Denko Corporation

20120115282 - Integrated electrostatic discharge (esd) device: A method for making a semiconductor device includes providing a substrate of a first conductivity type and having a surface region, forming a well region of a second conductivity type and having a first depth in the substrate, adding a gate dielectric layer overlying the surface region, adding a gate... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120115283 - Wiring substrate, semiconductor device, and method for manufacturing thereof: The present invention provides a thin wiring pattern such as wiring formed by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115285 - Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device: A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115284 - Method for manufacturing multi-gate transistor device: A method for manufacturing a multi-gate transistor device includes providing a semiconductor substrate having a first patterned semiconductor layer formed thereon, sequentially forming a gate dielectric layer and a gate layer covering a portion of the first patterned semiconductor layer on the semiconductor substrate, removing a portion of the first... Agent:

20120115286 - Thin-film transistor producing method: Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as... Agent: Sharp Kabushiki Kaisha

20120115287 - Manufacturing method of soi mos device eliminating floating body effects: The present invention discloses a manufacturing method of SOI MOS device eliminating floating body effects. The active area of the SOI MOS structure according to the present invention includes a body region, a N-type source region, a N-type drain region, a heavily doped P-type region, wherein the N-type source region... Agent:

20120115288 - Method for fabricating active device array substrate: A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric... Agent: Au Optronics Corporation

20120115289 - Tft charge storage memory cell having high-mobility corrugated channel: Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is... Agent:

20120115290 - Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device: The crystalline semiconductor film is formed following steps that supplying a film formation gas to a second gas diffusion area from a gas introduction port provided in an upper electrode; supplying the film formation gas to a first gas diffusion area from the second gas diffusion area through holes provided... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115291 - Method for manufacturing semiconductor device, and semiconductor device: A semiconductor device includes a first MISFET having a first conduction type channel and formed on a semiconductor substrate; a second MISFET having a second conduction type channel and formed on the semiconductor substrate; a first strain film having a first sign strain that covers a region where the second... Agent: Fujitsu Semiconductor Limited

20120115292 - Method for integrating sonos non-volatile memory into a standard cmos foundry process flow: An embodiment of a method is disclosed to integrate silicon oxide nitride oxide silicon (SONOS) non-volatile memory (NVM) into a conventional complementary metal oxide semiconductor (CMOS) semiconductor foundry process flow. An embodiment of the method only adds a few additional steps to a standard CMOS foundry process flow and makes... Agent:

20120115293 - Methods of manufacturing semiconductor devices: In a method of manufacturing a semiconductor device, a plurality of sacrificial layers and a plurality of insulating interlayers are repeatedly and alternately on a substrate. The insulating interlayers include a different material from a material of the sacrificial layers. At least one opening through the insulating interlayers and the... Agent:

20120115294 - Methods of forming nonvolatile memory devices having electromagnetically shielding source plates: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate including a cell array region, memory cell transistors disposed at the cell array region, bitlines disposed on the memory cell transistors, and a source plate disposed between the memory cell transistors... Agent:

20120115295 - Graphene based switching device having a tunable bandgap: A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.... Agent: International Business Machines Corporation

20120115296 - Tunnel field-effect transistor with gated tunnel barrier: A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to... Agent: Imec

20120115297 - Method for fabricating a tunneling field-effect transistor: The present invention discloses a method for self-alignedly fabricating tunneling field-effect transistor (TFET) based on planar process, thereby lowering requirements on a photolithography process for fabricating the planar TFET. In the method, the source region and the drain region of the TFET are not directly defined by photolithography; rather, they... Agent: Peking University

20120115298 - Method of fabricating gate and method of manufacturing semiconductor device using the same: A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate.... Agent:

20120115299 - Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion... Agent:

20120115301 - Metal capacitor and method of making the same: A method of making a metal capacitor includes the following steps. A dielectric layer having a dual damascene metal interconnection and a damascene capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the damascene capacitor electrode. The treatment can be... Agent:

20120115300 - Method for manufacturing semiconductor memory device: In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the... Agent: Elpida Memory, Inc.

20120115302 - Method to reduce a via area in a phase change memory cell: A memory cell structure and method to form such structure. The method partially comprised of forming a via within an oxidizing layer, over the center of a bottom electrode. The method includes depositing a via spacer along the sidewalls of the via and oxidizing the via spacer. The via spacer... Agent: International Business Machines Corporation

20120115303 - Method of fabricating damascene structures: Method of forming wires in integrated circuits. The methods include forming a wire in a first dielectric layer on a substrate; forming a dielectric barrier layer over the wire and the first dielectric layer; forming a second dielectric layer over the barrier layer; forming one or more patterned photoresist layers... Agent: International Business Machines Corporation

20120115304 - Isolation structure and formation method thereof: An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from... Agent: Macronix International Co., Ltd.

20120115305 - Method and structure for wafer to wafer bonding in semiconductor packaging: A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20120115306 - Deflector array, charged particle beam drawing apparatus, device manufacturing method, and deflector array manufacturing method: A deflector array includes a first base substrate including a plurality of apertures formed thereon, and a plurality of deflector chips including a plurality of apertures formed thereon and a plurality of electrode pairs disposed at both sides of at least a part of the plurality of apertures. The plurality... Agent: Canon Kabushiki Kaisha

20120115307 - Methods of manufacturing semiconductor chips: A method of manufacturing semiconductor chips includes providing a semiconductor substrate including circuit regions, irradiating the semiconductor substrate with a laser beam onto to form a frangible layer, and polishing the semiconductor substrate to separate the circuit regions of the semiconductor substrate from one another into semiconductor chips. The frangible... Agent: Samsung Electronics Co., Ltd.

20120115308 - Fabrication method for dicing of semiconductor wafers using laser cutting techniques: A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by... Agent:

20120115311 - Method for forming a multilayer structure: The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3or P-doped semiconductor material, and a second layer made from semiconductor... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120115310 - Method of sige epitaxy with high germanium concentration: The present invention discloses a method of SiGe epitaxy with high germanium concentration, a germanium concentration can be increased by reducing the percentage of silane and germane during introduction silane and germane. With the same flow of germanium source, the germanium concentration is significantly increased as the germane flow is... Agent:

20120115309 - Methods of manufacturing a vertical type semiconductor device: Methods of manufacturing a semiconductor device include forming a stopping layer pattern in a first region of a substrate. A first mold structure is formed in a second region of the substrate that is adjacent the first region. The first mold structure includes first sacrificial patterns and first interlayer patterns... Agent:

20120115313 - Semiconductor device manufacturing apparatus and method: A sealing member is lifted to cause its edge to be in contact with a contact surface of a support member. In the state where a precision ejection nozzle is isolated, a gas exhaust unit is operated to exhaust the inside of a chamber to reduce the pressure in the... Agent: Tokyo Electron Limited

20120115312 - Thin films for photovoltaic cells: In one aspect, a method for forming CIGSSe-based thin films includes depositing at least two layers of particles on a substrate. At least one layer includes a CIGSSe particle having a chemical composition denoted by Cu(InI-xGax)(S1-ySey)2 where 0≦x ≦1 and 0≦y≦1. The particle layers are annealed individually or in combination... Agent: Purdue Research Foundation

20120115314 - Plasma processing apparatus and method of producing amorphous silicon thin film using same: Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding... Agent: Toray Industries, Inc,

20120115315 - Low temperature gst process: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate;... Agent: Advanced Technology Materials, Inc.

20120115316 - Crystallization apparatus, crystallization method, and method of manufacturing organic light-emitting display device, which use sequential lateral solidification: A crystallization apparatus, which uses sequential lateral solidification (SLS) and crystallizes an amorphous silicon layer formed on a substrate, includes a laser generating device, a first optical system, a second optical system, and a path switching member. The laser generating device is configured to emit a laser beam. The first... Agent:

20120115317 - Plasma doping method and apparatus thereof: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied... Agent:

20120115318 - Method for low temperature ion implantation: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to... Agent: Advanced Ion Beam Technology, Inc.

20120115319 - Contact pad: The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for... Agent: Cree, Inc.

20120115320 - Semiconductor device having decreased contact resistance and method for manufacturing the same: A semiconductor device includes a first plug formed on a semiconductor substrate and exposed on side and upper surfaces of an upper part thereof and a second plug formed on the first plug to contact the exposed side and upper surfaces of the upper part of the first plug.... Agent: Hynix Semiconductor Inc.

20120115321 - Method for removing polymer after etching gate stack structure of high-k gate dielectric/metal gate: The present invention provides a method for removing polymer after etching a gate stack structure of high-K gate dielectric/metal gate. The method mainly comprises the following steps: 1): forming a gate stack structure of interface SiO2/high-K gate dielectric/metal gate/poly-silicon/hard mask in sequence on a silicon substrate with device isolations formed... Agent: Institute Of Microelectronics, Chinese Academy Of Science

20120115322 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: forming a plurality of photoresist patterns over a substrate structure; forming an insulation layer for a spacer over a structure including the photoresist patterns; forming a plurality of spacers on sidewalls of the photoresist patterns by anisotropically etching the insulation layer, and... Agent:

20120115323 - Semiconductor device manufacturing method and semiconductor device: A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for... Agent:

20120115325 - Ion-induced atomic layer deposition of tantalum: Systems, methods, and apparatus for depositing a tantalum layer on a wafer substrate are disclosed. In one aspect, a tantalum layer may be deposited on a surface of a wafer substrate using an ion-induced atomic layer deposition process with a tantalum precursor. A copper layer may be deposited on the... Agent:

20120115324 - Method for manufacturing a semiconductor device having a refractory metal containing film: A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO2film provided on... Agent: Renesas Electronics Corporation

20120115326 - Method of forming metal silicide regions: The method described herein involves the formation of metal silicide regions. The method may involve forming a layer of refractory metal on a structure comprising silicon, forming a layer of silicon on the layer of refractory metal and, after forming the layer of silicon, performing at least one heat treatment... Agent: Globalfoundries Inc.

20120115327 - Method of manufacturing via hole and method of manufacturing semiconductor device having via holes: A first metal mask has a portion exposed at an opening of a second metal mask. The second metal mask is formed to be thicker than the first metal mask. The thickness of the first and second metal masks is such that the etching at an opening of the first... Agent: Mitsubishi Electric Corporation

20120115328 - Electroforming technique for mask formation: A method for making a mask for semiconductor manufacturing. The method includes providing a base layer, forming a conductive layer on the base layer, and forming a photoresist layer on the conductive layer. Additionally, the method includes exposing selectively the photoresist layer to an energy illumination, developing the photoresist layer... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120115329 - Depositing tungsten into high aspect ratio features: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is... Agent:

20120115330 - Metal-insulator-semiconductor tunneling contacts: A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.... Agent:

20120115331 - Methods of forming fine patterns and methods of fabricating semiconductor devices: Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may... Agent: Samsung Electronics Co., Ltd.

20120115332 - Method of post etch polymer residue removal: A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The... Agent: Lam Research Corporation

20120115333 - Polybenzoxazole precursor, photosensitive resin composition using the same, and manufacturing method of semiconductor device: m

20120115334 - Method of depositing dielectric films using microwave plasma: Embodiments of the invention describe a method for forming dielectric films for semiconductor devices. The method includes providing a substrate in a process chamber containing a microwave plasma source, introducing into the process chamber a non-metal-containing process gas including a deposition gas having a carbon-nitrogen intermolecular bond, forming a plasma... Agent:

20120107964 - Low-cost non-volatile flash-ram memory: A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory... Agent: Avalanche Technology, Inc.

20120107966 - Magnetic tunnel junction device and fabrication: A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized... Agent: Qualcomm Incorporated

20120107962 - Method of fabricating epitaxial semiconductor devices: A method of fabricating epitaxial semiconductor devices includes: (a) forming an etch limiting film that includes a sacrificial layer on an epitaxial substrate; (b) growing epitaxially layers of a semiconductor structure on the sacrificial layer; (c) forming on the semiconductor structure a layer of a device substrate that can be... Agent: National Cheng Kung University

20120107963 - Semiconductor device and manufacturing method thereof: The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region;... Agent: Fujitsu Semiconductor Limited

20120107965 - Semiconductor device and method for manufacturing the same: A semiconductor device includes an insulating film provided over a semiconductor substrate, a conductive plug buried in the insulating film, an underlying conductive film which is provided on the conductive plug and on the insulating film and which has a flat upper surface, and a ferroelectric capacitor provided on the... Agent: Fujitsu Semiconductor Limited

20120107967 - Method for fabrication of a semiconductor device and structure: A method of manufacturing a semiconductor wafer, the method including: providing a first monocrystalline layer including first transistors and interconnecting metal layers to perform at least one first electronic function; providing a second monocrystalline layer on top of the metal layers, wherein the second monocrystalline layer includes second transistors to... Agent: Monolithic 3d Inc.

20120107968 - Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and method of estimating damage from formation of scribe groove: A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the... Agent: Sumitomo Electric Industries, Ltd.

20120107970 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device is provided to improve the reliability of electrical coupling of the semiconductor device. The manufacturing method includes the steps of (a) laminating a main conductive film (base film) and a stopper insulating film (film to be measured) above the main conductive film, over... Agent: Renesas Electronics Corporation

20120107969 - Method and system for comparing lithographic processing conditions and or data preparation processes: A set of optical rule checker (ORC) markers are identified in a simulated lithographic pattern generated for a set of data preparation parameters and lithographic processing conditions. Each ORC marker identifies a feature in the simulated lithographic pattern that violates rules of the ORC. A centerline is defined in each... Agent: International Business Machines Corporation

20120107971 - Substrate polishing metrology using interference signals: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the... Agent:

20120107972 - Laser diode and method of manufacturing the same: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel... Agent: Sony Corporation

20120107973 - Method for producing lamps: A method for producing luminous means proposes providing a carrier serving as a heat sink, said carrier comprising a planar chip mounting region. The planar chip mounting region is structured for the purpose of producing a first partial region and at least one second partial region. In this case, the... Agent: Osram Opto Semiconductors Gmbh

20120107976 - Led package and method of manufacturing the same: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.... Agent: Samsung Led Co., Ltd.

20120107974 - Manufacturing light emitting diode (led) packages: A method of manufacturing an LED package includes mounting a large panel frame/substrate (LPF/S) having a substantially square shape to a ring. The LPF/S includes a plurality of die pads and a corresponding plurality of leads arranged in a matrix pattern. Each of the die pads includes a planar chip... Agent: Carsem (m) Sdn. Bhd.

20120107975 - Method for packaging light emitting diode: An LED packaging method includes: providing a mold with two isolated receiving spaces and a substrate with a die supporting portion and an electrode portion respectively received in the two receiving spaces; disposing an LED die on the die supporting portion and electrically connecting the LED die to the electrode... Agent: Advanced Optoelectronic Technology, Inc.

20120107977 - Polarized light emitting diode device and method for manufacturing the same: The present invention relates to a polarized light emitting diode (LED) device and the method for manufacturing the same, in which the LED device comprises: a base, a light emitting diode (LED) chip, a polarizing waveguide and a packaging material. In an exemplary embodiment, the LED chip is disposed on... Agent: Industrial Technology Research Institute

20120107980 - Liquid crystal display device and method of fabricating the same: A liquid crystal display device and a method of fabricating the same is disclosed, to provide a liquid crystal display device to simplify the process and decrease the fabrication cost, the liquid crystal display device includes a first substrate having a color filter and a second substrate having a thin... Agent:

20120107979 - Method for manufacturing light emitting device: A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type... Agent:

20120107978 - Method of fabricating flexible display device: A method of fabricating a flexible display device includes: forming a plastic substrate on a carrier substrate, the plastic substrate including an active area and a non-active area surrounding the active area; forming an array element on the carrier substrate, the array element including a plurality of layers and having... Agent:

20120107981 - Semiconductor light sources, systems, and methods: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming... Agent: Phoseon Technology, Inc.

20120107982 - Manufacturing method for array substrate with fringe field switching type thin film transistor liquid crystal display: Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20120107984 - Laser crystallization system and method of manufacturing display apparatus using the same: A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first... Agent: Samsung Mobile Display Co., Ltd.

20120107983 - Method of fabricating array substrate: A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer... Agent:

20120107985 - Semiconductor device and its manufacturing method: A manufacturing method of a semiconductor device includes forming a pixel portion and a driving circuit including a semiconductor layer. A scan line in a pixel portion and a first wiring in a driving circuit are formed by patterning a first conductive layer, and a data line in the pixel... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120107986 - Organic el display device: An organic EL display device includes a pixel electrode which is disposed in each of first to third organic EL elements, a first light emission layer which includes a first dopant material having a first absorbance peak, the first light emission layer extending over the first to third organic EL... Agent:

20120107989 - Cross-linkable iridium complexes and organic light-emitting devices using the same: Organic devices comprising an organic layer, wherein the organic layer is non-electroluminescent and comprises a cross-linked metal complex. The cross-linked metal complex may be formed by cross-linking a cross-linkable iridium complex, which comprises a set of ligands coordinated to a central iridium atom. One or more of the ligands have... Agent:

20120107988 - Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device: Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer,... Agent: Samsung Electronics Co., Ltd.

20120107987 - Method of manufacturing semiconductor light emitting device: In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode... Agent:

20120107991 - Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices: A III-nitride-based light emitting device having a multiple quantum well (MQW) structure and a method for fabricating the device, wherein at least one barrier in the MQW structure is doped with magnesium (Mg). The Mg doping of the barrier is accomplished by introducing a bis(cyclopentadienyl)magnesium (Cp2Mg) flow during growth of... Agent: The Regents Of The University Of California

20120107990 - Method for manufacturing semiconductor light emitting device and semiconductor crystal growth apparatus: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include a crystal growth process. The crystal growth process is configured to grow a stacked structure of compound semiconductor composed of a group III element and a group V element on a... Agent: Kabushiki Kaisha Toshiba

20120107993 - Method of making a micro-electro-mechanical-systems (mems) device: A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form... Agent:

20120107992 - Method of producing layered wafer structure having anti-stiction bumps: A method (50) for producing a layered wafer structure (24) having anti-stiction bumps (22) entails producing the anti-stiction bumps (22) in a surface (32) of a substrate (26) or, alternatively, in a surface (48) of a substrate (28). The method (50) further entails coupling the substrates (26, 28) with an... Agent: Freescale Semiconductor, Inc.

20120107994 - Manufacturing method of semiconductor device: In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by... Agent: Denso Corporation

20120107995 - Process for producing solar cell module: A process for producing a solar cell module, including (a) forming a seal part made of e.g. a double sided adhesive tape on the edge of a surface of a transparent surface material (first surface material), (b) supplying a liquid state photocurable resin composition to the region enclosed by the... Agent: Asahi Glass Company, Limited

20120107996 - Surface treatment process performed on a transparent conductive oxide layer for solar cell applications: Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber,... Agent: Applied Materials, Inc.

20120107998 - Ion implanted solar cells with in situ surface passivation: Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal... Agent: Suniva, Inc.

20120107997 - Method of manufacturing solar cell: In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the... Agent:

20120107999 - Method of fabricating flexible artificial retina devices: Fabrication methods for a flexible device for retina prosthesis are described. Layered structures including an array of pixel units may be formed over a substrate. Each pixel unit may comprise a processing circuitry, a micro electrode and a photo sensor. A first set of biocompatible layers may be formed over... Agent: National Tsing-hua University

20120108000 - Method of fabricating metal oxide semiconductor device: A method of fabricating an MOS device is provided. First, gates and source/drain regions of transistors are formed on a substrate. A photodiode doped region and a floating node doped region are formed in the substrate. Thereafter, a spacer stacked layer including a bottom layer, an inter-layer and a top... Agent:

20120108001 - Method for manufacturing solar cell: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the... Agent: Samsung Electronics Co., Ltd.

20120108002 - Apparatus, method and system for depositing layer of solar cell: The apparatus for thin film deposition for solar cells includes multiple unit chambers divided by a substrate as a boundary, a deposition gas injecting unit injecting deposition gases independently to each of the multiple unit chambers, and a decomposition unit in each of the multiple unit chambers to decompose the... Agent: Korea Institute Of Energy Research

20120108003 - Method for producing a solar cell: In various embodiments, a method for producing a solar cell is provided. In accordance with the method, through-holes may be formed in a solar cell substrate having the basic doping of a first conduction type. Furthermore, predetermined surface regions of a first surface of the solar cell substrate which include... Agent: Solarworld Innovations Gmbh

20120108004 - Photo-semiconductor device and method of manufacturing the same: A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of... Agent: Canon Kabushiki Kaisha

20120108005 - Method for forming ge-sb-te film and storage medium: A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after... Agent: Tokyo Electron Limited

20120108006 - Semiconductor device and method for manufacturing the same: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108007 - Semiconductor device and method for manufacturing the same: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108009 - Electrically conductive interconnect system and method: An electrically conductive interconnect system has a post, extending above a supporting surface, the post including a rigid material, a coating on the rigid material, wherein the post and has a first width at the supporting surface and a second width at a distance removed from the supporting surface, and... Agent:

20120108008 - Electrode connection structure of semiconductor chip, conductive member, and semiconductor device and method for manufacturing the same: An electrode connection structure of a semiconductor chip is provided to realize a highly reliable electrical connection with low stress without using a bump. A conductive member may be used for such an electrode connection structure. A semiconductor device is provided wherein semiconductor chips are arranged in layers without providing... Agent: National Institute Of Advanced Industrial Science And Technology

20120108010 - Stacked microelectronic devices and methods for manufacturing stacked microelectronic devices: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second... Agent: Micron Technology, Inc.

20120108012 - Film for semiconductor and semiconductor device manufacturing method: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer... Agent:

20120108011 - Method of fabricating a semiconductor device with a back electrode: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the... Agent: Sanyo Electric Co., Ltd.

20120108013 - Method for manufacturing semiconductor device: In QFN packages for vehicles which are required to have high reliability, the side surface of leads is mostly covered with lead-to-lead resin protrusions, which prevent smooth formation of solder fillets during reflow mounting. When the lead-to-lead protrusions are mechanically removed using a punching die, there is a high possibility... Agent: Renesas Electronics Corporation

20120108014 - Method for manufacturing semiconductor device: An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108015 - Underfill flow guide structures and method of using same: Underfill flow guide structures and methods of using the same are provided with a module. In particular the underfill flow guide structures are integrated with a substrate and are configured to prevent air entrapment from occurring during capillary underfill processes.... Agent: International Business Machines Corporation

20120108016 - Semiconductor device and manufacturing methods with using non-planar type of transistors: Static random access memory cells and methods of making static random access memory cells are provided. The static random access memory cells contain two non-planar pass-gate transistors, two non-planar pull-up transistors, two non-planar pull-down transistors. A portion of a fin of the non-planar pull-up transistor is electrically connected to a... Agent: Kabushiki Kaisha Toshiba

20120108017 - Threshold voltage adjustment through gate dielectric stack modification: Multiple types of gate stacks are formed on a doped semiconductor well. A high dielectric constant (high-k) gate dielectric is formed on the doped semiconductor well. A metal gate layer is formed in one device area, while the high-k gate dielectric is exposed in other device areas. Threshold voltage adjustment... Agent: International Business Machines Corporation

20120108018 - Method for manufacturing thin film transistor substrate: A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12a) having a contact hole at a position overlapping the first interconnect, a step of forming... Agent: Sharp Kabushiki Kaisha

20120108019 - Method for fabricating a substrate provided with two active areas with different semiconductor materials: A layer of second semiconductor material is deposited on the layer of first semiconductor material of a substrate. Two active areas are then defined by means of selective elimination of the first and second semiconductor materials. One of the two active areas is then covered by a protective material. The... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120108020 - Low temperature coefficient resistor in cmos flow: A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.... Agent: Texas Instruments Incorporated

20120108021 - Pmos sige-last integration process: A process of forming a CMOS integrated circuit including integrating SiGe source/drains in the PMOS transistor after source/drain and LDD implants and anneals. A dual layer hard mask is formed on a polysilicon gate layer. The bottom layer prevents SiGe growth on the polysilicon gate. The top layer protects the... Agent: Texas Instruments Incorporated

20120108022 - Semiconductor device including a p-channel type mos transmitter: A method of manufacturing a semiconductor device including a stacked gate type nonvolatile memory cell and a p-channel type first transistor, includes: forming a gate insulating film of the first transistor on a semiconductor substrate; forming a tunnel insulating film of the stacked gate type nonvolatile memory cell on the... Agent: Fujitsu Semiconductor Limited

20120108023 - Method for manufacturing semiconductor device: A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.... Agent: Samsung Electronics Co., Ltd.

20120108024 - Field effect transistor having nanostructure channel: A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure.... Agent: International Business Machines Corporation

20120108025 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and... Agent: Fujitsu Semiconductor Limited

20120108026 - Method of manufacturing strained source/drain structures: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of an integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108027 - Improved silicide method: A process for forming an integrated circuit with reduced sidewall spacers to enable improved silicide formation between minimum spaced transistor gates. A process for forming an integrated circuit with reduced sidewall spacers by first forming sidewall spacer by etching a sidewall dielectric and stopping on an etch stop layer, implanting... Agent: Texas Instruments Incorporated

20120108028 - Methods of forming electrical components and memory cells: Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface... Agent:

20120108029 - Semiconductor device and method for manufacturing the same: It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108030 - Method for obtaining smooth, continuous silver film: A method for forming a semiconductor device including a resistive memory cell includes providing a substrate having an upper surface. A first conductive layer is formed over the upper surface of the substrate. An amorphous silicon layer is formed over the first conductive layer. A surface of the amorphous silicon... Agent: Crossbar, Inc.

20120108031 - Resistive random access memory and method for manufacturing the same: A resistive random access memory including, an insulating layer, a hard mask layer, a bottom electrode, a memory cell and a top electrode is provided. The insulating layer is disposed on the bottom electrode. The insulating layer has a contact hole having a first width. The hard mask layer has... Agent: Macronix International Co., Ltd.

20120108032 - Method for forming a semiconductor device with stressed trench isolation: A method for forming a semiconductor device with stressed trench isolation is provided, comprising: providing a silicon substrate (S11); forming at least two first trenches in parallel on the silicon substrate and forming a first dielectric layer which is under tensile stress in the first trenches (S12); forming at least... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120108033 - Method of manufacturing devices having vertical junction edge: Techniques for forming devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an oxide. Cavities may be formed in the oxide and filled with a conductive material, such a doped polysilicon. Vertical junctions are formed between the polysilicon and... Agent: Micron Technology, Inc.

20120108034 - Substrate structure having buried wiring and method for manufacturing the same, and semiconductor device and method for manufacturing the same using the substrate structure: Provided are a substrate structure which may solve problems generated in a manufacturing process while having a relatively low resistance buried wiring, a method for manufacturing the substrate structure, and a semiconductor device and a method for manufacturing the same using the substrate structure. The substrate structure may include a... Agent: Samsung Electronics Co., Ltd.

20120108035 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface... Agent:

20120108036 - Active region patterning in double patterning processes: A method includes forming an SRAM cell including a first and a second pull-up transistor and a first and a second pull-down transistor. The step of forming the SRAM cell includes forming a first and a second active region of the first and the second pull-up transistors using a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108037 - Methods of forming a phase change material: A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of at least one of nitrogen and oxygen than... Agent: Micron Technology, Inc.

20120108038 - Amorphous ge/te deposition process: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form... Agent: Advanced Technology Materials, Inc.

20120108039 - Etchant treatment processes for substrate surfaces and chamber surfaces: Embodiments of the invention generally relate to methods for treating a silicon-containing material on a substrate surface and performing a chamber clean process. In one embodiment, a method includes positioning a substrate containing a silicon material having a contaminant thereon within a process chamber and exposing the substrate to an... Agent:

20120108041 - Patterning of nanostructures: A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the charge pattern so that the MSSBBs adhere to the charge pattern to form the feature.... Agent: Massachusetts Institute Of Technology

20120108040 - Vaporizing polymer spray deposition system: A vaporizing spray deposition device for forming a thin film includes a processing chamber, a fluid line, and a spray head coupled to the fluid line proximate the processing chamber. The fluid line is configured to transfer a polymer fluid and solvent mixture to the spray head. The spray head... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108042 - Methods of forming doped regions in semiconductor substrates: Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a... Agent: Micron Technology, Inc.

20120108044 - Isotopically-enriched boron-containing compounds, and methods of making and using same: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical... Agent: Advanced Technology Materials, Inc.

20120108043 - Pattern forming process: A resist pattern is formed by coating a first positive resist composition comprising a polymer comprising 20-100 mol % of aromatic group-containing recurring units and adapted to turn alkali soluble under the action of an acid onto a substrate to form a first resist film, coating a second positive resist... Agent: Shin-etsu Chemical Co., Ltd.

20120108045 - Method for radiation hardening a semiconductor device: Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include the one or more parasitic isolation devices and/or buried guard ring structures disclosed in the present application. The introduction... Agent:

20120108046 - Patterning methodology for uniformity control: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patternable layer over a substrate. The method includes forming a first layer over the patternable layer. The method includes forming a second layer over the first layer. The second layer is substantially thinner than... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108047 - Methods of forming conductive contacts in the fabrication of integrated circuitry: A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is... Agent:

20120108048 - Three-dimensional semiconductor devices and methods of fabricating the same: A method of fabricating a three-dimensional semiconductor memory device includes providing a substrate which includes a cell array region and a peripheral region. The method further includes a peripheral structure on the peripheral region of the substrate, where the peripheral structure includes peripheral circuits and is configured to expose the... Agent: Samsung Electronics Co., Ltd.

20120108049 - Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same: There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108050 - Work function engineering for edram mosfets: Embedded DRAM MOSFETs including an array NFET having a gate stack comprising a high-K dielectric layer upon which is deposited a first metal oxide layer (CD1) then a conductive layer (TiN), and then a polysilicon layer (Poly). A logic PFET having substantially the same gate stack as the array NFET,... Agent: International Business Machines Corporation

20120108051 - Different gate oxides thicknesses for different transistors in an integrated circuit: An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide... Agent:

20120108052 - Electronic apparatus containing lanthanide yttrium aluminum oxide: Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more monolayers. The lanthanide yttrium aluminum oxide film may be... Agent:

20120108053 - Apparatus, system, and method for wireless connection in integrated circuit packages: Some embodiments of the invention include a connecting structure between a support and at least one die attached to the support. The die includes a number of die bond pads on a surface of the die. The connecting structure includes a plurality of via and groove combinations. Conductive material is... Agent:

20120108054 - Dual damascene copper process using a selected mask: A method for creating a dual damascene structure while using only one lithography and masking step. Conventional dual damascene structures utilize two lithography steps: one to mask and expose the via, and a second step to mask and expose the trench interconnection. The novel method for creating a dual damascene... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120108055 - Manufacturing process of semiconductor device and semiconductor device: After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of... Agent: Renesas Electronics Corporation

20120108056 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: forming a plurality of photoresist patterns over a substrate structure; forming an insulation layer for a spacer over a structure including the photoresist patterns; forming a plurality of spacers on sidewalls of the photoresist patterns by anisotropically etching the insulation layer, and... Agent:

20120108057 - Method for fabricating semiconductor device with buried gates: A method for fabricating a semiconductor device includes forming first plugs over a substrate, forming contact holes that expose the first plugs, ion-implanting an anti-diffusion material into the first plugs, and forming second plugs filling the contact holes.... Agent:

20120108059 - Method of manufacturing semiconductor device: The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of... Agent: Rohm Co., Ltd.

20120108058 - Methods of forming layers on substrates: Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the... Agent: Applied Materials, Inc.

20120108060 - Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method: In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.... Agent: Nec Electronics Corporation

20120108061 - Substrate processing apparatus and method of manufacturing a semiconductor device: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate... Agent: Hitachi Kokusai Electric, Inc

20120108062 - Nitrogen-containing ligands and their use in atomic layer deposition methods: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.... Agent: Applied Materials, Inc.

20120108063 - Beam dose computing method and writing method and record carrier body and writing apparatus: A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects... Agent: Nuflare Technology, Inc.

20120108064 - Polishing composition for silicon wafers: A polishing composition for a silicon wafer includes a macromolecular compound, an abrasive, and an aqueous medium. The macromolecular compound includes a constitutional unit (a1) represented by the following general formula (1), a constitutional unit (a2) represented by the following general formula (2), and a constitutional unit (a3) represented by... Agent:

20120108065 - Method for manufacturing polishing pad: A method for manufacturing a polishing pad, which may be laminated, with a small number of manufacturing steps, high productivity and no peeling between a polishing layer and a cushion layer includes preparing a cell-dispersed urethane composition by a mechanical foaming method; continuously discharging the cell-dispersed urethane composition onto a... Agent: Toyo Tire & Rubber Co., Ltd.

20120108066 - Pecvd showerhead configuration for cmp uniformity and improved stress: A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead.... Agent: Texas Instruments Incorporated

20120108067 - Edge bead remover for coatings: The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge... Agent:

20120108068 - Method for patterning sublithographic features: A method of uniformly shrinking hole and space geometries by forming sidewalls of an ALD film deposited at low temperature on a photolithographic pattern.... Agent: Texas Instruments Incorporated

20120108069 - Methods of forming an integrated circuit with self-aligned trench formation: Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set of trenches. Methods taught herein can be used as a pitch doubling technique, and may therefore enhance device integration. Further, employing a very thin CMP stop... Agent: Micron Technology, Inc.

20120108070 - Method for forming semiconductor device: A method for forming a semiconductor device is disclosed. A method for forming a semiconductor device includes forming a first hard mask layer over a semiconductor substrate including a cell region and a peripheral circuit region, forming a spacer pattern over the first hard mask layer of the cell region,... Agent: Hynix Semiconductor Inc.

20120108071 - Resist underlayer film composition and patterning process using the same: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula... Agent: Shin-etsu Chemical Co., Ltd.

20120108072 - Showerhead configurations for plasma reactors: Apparatus, devices, and methods for increasing the ion energy in a plasma processing devices are provided. In various embodiments, the surface area of a showerhead facing the work piece includes a plurality of features. The plurality of features increases the surface area of the showerhead relative to a flat surface.... Agent:

20120108073 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes forming a plurality of patterns, forming an etch target layer to gap-fill the plurality of patterns, forming an impurity region in the etch target layer, and performing an etch-back process on the etch target layer using the impurity region as an etch... Agent:

20120108074 - Method for treating a semiconductor wafer: applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.... Agent: Lam Research Ag

20120108075 - Gas-phase functionalization of surfaces of microelectronic structures: There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce... Agent: President And Fellows Of Harvard College

20120108076 - Showerhead for cvd depositions: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled... Agent: Texas Instruments Incorporated

20120108077 - Substrate processing apparatus and semiconductor device manufacturing method: Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a... Agent: Hitachi Kokusai Electric Inc.

20120108078 - Semiconductor device and method for manufacturing the same: It is made possible to provide a semiconductor device and a method for manufacturing the semiconductor device that have the highest possible permittivity and can be produced at low production costs. A method for manufacturing a semiconductor device, includes: forming an amorphous film containing (HfzZr1−z)xSi1−xO2−y (0.81≦x≦0.99, 0.04≦y≦0.25, 0≦z≦1) on a... Agent: Kabushiki Kalsha Toshiba

20120108079 - Atomic layer deposition film with tunable refractive index and absorption coefficient and methods of making: Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to... Agent: Applied Materials, Inc.

20120108081 - Apparatus having improved substrate temperature uniformity using direct heating methods: Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one... Agent: Applied Materials, Inc.

20120108080 - Substrate processing apparatus and method of manufacturing a semiconductor device: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the... Agent: Hitachi Kokusai Electric Inc.

20120100639 - Semiconductor device manufacturing method and manufacturing apparatus: A semiconductor device manufacturing method and manufacturing apparatus with which it is possible, when a wafer has a warp, to effectively peel off an ultraviolet peelable tape with ultraviolet irradiation of a short duration. Even when a wafer has a warp, by correcting the warp of the wafer with an... Agent: Fuji Electric Co., Ltd.

20120100640 - Systems and methods for forming a time-averaged line image: Systems and methods for forming a time-average line image are disclosed. The method includes forming a line image with a first amount of intensity non-uniformity. The method also includes forming and scanning a secondary image over at least a portion of the line image to form a time-averaged modified line... Agent: Ultratech, Inc.

20120100641 - Etching apparatus and etching method: According to an embodiment, an etching apparatus includes a reaction chamber, a vacuum pump connected to the reaction chamber through the gate valve, a holding unit which holds a processing subject, an etching gas supply unit, a heating unit, and a sublimation amount determining unit. The etching gas supply unit... Agent: Kabushiki Kaisha Toshiba

20120100643 - Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane: A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength... Agent: Sumitomo Electric Industries, Ltd.

20120100642 - Spectra based endpointing for chemical mechanical polishing: A computer implemented method of monitoring a polishing process includes, for each sweep of a plurality of sweeps of an optical sensor across a substrate undergoing polishing, obtaining a plurality of current spectra, each current spectrum of the plurality of current spectra being a spectrum resulting from reflection of white... Agent:

20120100645 - Method for fabricating light emitting device: A method for fabricating a light emitting device is provided. The method comprises forming a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer and forming a mixed-period photonic crystal structure on the light emitting structure. And the forming... Agent:

20120100644 - Organic layer deposition apparatus, and method of manufacturing organic light-emitting display apparatus using the same: An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a... Agent:

20120100646 - Method for distributing phosphor particulates on led chip: A method for distributing phosphor particulates on an LED chip, includes steps of: providing a substrate having an LED chip mounted thereon; dispensing an adhesive on the chip, wherein the adhesive have positively charged phosphor particulates doped therein; providing an upper mold and a lower mold for producing an electric... Agent: Advanced Optoelectronic Technology, Inc.

20120100647 - Method of manufacturing flexible display device: A method of manufacturing a flexible display device is provided. The method includes: preparing a first flexible substrate on which a display unit is formed; forming an encapsulation unit including a base substrate, a second flexible substrate formed on the base substrate, and a barrier layer formed on the second... Agent: Samsung Mobile Display Co., Ltd.

20120100648 - Method for manufacturing light emitting chip: A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base... Agent: Advanced Optoelectronic Technology, Inc.

20120100649 - Method for manufacturing a film structure: m

20120100650 - Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers: A method for fabricating a semi-polar III-nitride substrate for semi-polar III-nitride device layers, comprising providing a vicinal surface of the III-nitride substrate, so that growth of relaxed heteroepitaxial III-nitride device layers on the vicinal surface compensates for epilayer tilt of the III-nitride device layers caused by one or more misfit... Agent: The Regents Of The University Of California

20120100652 - Fabrication method of active device array substrate: A fabrication method of an active device array substrate is disclosed. A first metal material layer, a gate insulation material layer, a channel material layer, a second metal material layer, and a first photoresist layer are formed over a substrate sequentially. The first photoresist layer is patterned with a multi-tone... Agent: Chunghwa Picture Tubes, Ltd.

20120100651 - Method of manufacturing organic light emitting device and method of manufacturing organic light emitting display apparatus using the same: A method of manufacturing an organic light emitting device that readily increases the characteristics of an intermediate layer having an organic light emitting layer, and a method of manufacturing an organic light emitting display apparatus. The method of manufacturing an organic light emitting device includes preparing a substrate having a... Agent:

20120100653 - Methods of manufacturing master, pixel array substrate and electro-optical device: A master having a substrate including displaying units and an ESD protection structure including an adjacent first region and a second region is provided. The displaying units have a predetermined-cutting region therebetween. Each displaying unit includes a peripheral circuit region and a display region having pixels. The ESD protection structure... Agent: Au Optronics Corporation

20120100654 - Group-iii nitride semiconductor laser device, and method of fabricating group-iii nitride semiconductor laser device: A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed... Agent: Sumitomo Electric Industries, Ltd.

20120100655 - Organic el device: According to one embodiment, a method of manufacturing an organic EL device includes providing a structure including a substrate and an electrode positioned above the substrate, and forming an organic layer including a mixture of first and second organic materials above the electrode. The first organic material has a first... Agent:

20120100656 - Method for making a solid state semiconductor device: A method for making a solid state semiconductor device includes: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer; forming a surface-textured second epitaxial layer on the first epitaxial layer by chemical vapor deposition; and forming a solid state stacked... Agent: Advanced Optoelectronic Technology, Inc.

20120100657 - Simplified copper-copper bonding: A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less... Agent: Commisariat A L'energie Atomique Et Aux Ene Alt

20120100658 - Method of forming semiconductor device: Provided is a method of forming a semiconductor device. The method includes forming an insulating film on a semiconductor substrate, a conductive film on the insulating film, and a first structure and a second structure on the conductive film. The semiconductor substrate has first and second regions. The first and... Agent:

20120100659 - Method for manufacturing solid-state image sensor: A method for manufacturing a solid-state image sensor includes forming a gate electrode structure including a gate electrode on a gate insulating film formed on a semiconductor substrate, and implanting ions into a first region and simultaneously implanting the ions into a second region of the semiconductor substrate via the... Agent: Canon Kabushiki Kaisha

20120100661 - Ink for forming thin film of solar cells and method for preparing the same, cigs thin film solar cell using the same and manufacturing method thereof: Discussed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing... Agent:

20120100660 - Method for preparation of metal chalcogenide solar cells on complexly shaped surfaces: Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is... Agent:

20120100662 - Method of manufacturing solid-state image sensor: A method of manufacturing a solid-state image sensor, includes forming a color-filter layer including a plurality of color filters on a wiring structure arranged on a semiconductor substrate on which a plurality of photoelectric converters are formed, forming a photosensitive microlens material layer on the color-filter layer, and forming microlenses... Agent: Canon Kabushiki Kaisha

20120100663 - Fabrication of cuznsn(s,se) thin film solar cell with valve controlled s and se: Techniques for fabricating thin film solar cells are provided. In one aspect, a method of fabricating a solar cell includes the following steps. A molybdenum (Mo)-coated substrate is provided. Absorber layer constituent components, two of which are sulfur (S) and selenium (Se), are deposited on the Mo-coated substrate. The S... Agent: International Business Machines Corporation

20120100664 - Fabricating kesterite solar cells and parts thereof: A Kesterite film is vacuum deposited and annealed on a substrate. Deposition is conducted at low temperature to provide good composition control and efficient use of metals. Annealing is conducted at a high temperature for a short period of time. Thermal evaporation, E-beam evaporation or sputtering in a high vacuum... Agent: International Business Machines Corporation

20120100665 - Method for manufacturing silicon thin-film solar cells: The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical... Agent:

20120100666 - Photoluminescence image for alignment of selective-emitter diffusions: Embodiments of the invention generally provide a solar cell formation process that includes the formation of metal contacts over heavily doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is used... Agent: Applied Materials Italia S.r.l.

20120100667 - Organic semiconductor ink composition and method for forming organic semiconductor pattern using the same: Provided is an ink that is the most suitable for a method for forming an organic transistor by transferring a pattern using a liquid-repellent transfer substrate, for example, a microcontact printing method or a reverse printing method. Specifically, provided is an organic semiconductor ink composition which can provide a uniform... Agent: Dic Corporation

20120100668 - Method of manufacturing a flip chip package and apparatus to attach a semiconductor chip used in the method: A method and apparatus to manufacture a flip chip package includes dotting a flux on a first preliminary bump of a package substrate, attaching a preliminary bump of a first semiconductor chip to the first preliminary bump of the package substrate via the flux, dotting a flux on a second... Agent: Samsung Electronics Co., Ltd.

20120100669 - Method of manufacturing tmv package-on-package device: A method of manufacturing a Through Mold Via (TMV) package-on-package device while preventing a bad solder joint from occurring in the TMV package-on-package device is provided. The method includes coating exposed portions of a lower semiconductor package with an organic soldering preservative, and stacking a top semiconductor package on the... Agent: Samsung Electronics Co. Ltd.

20120100670 - Wafer level buck converter: A buck converter module includes a high side (HS) die having source, drain, and gate bonding pads on a front side of the HS die, a low side (LS) die having a first section thereof with a plurality of through silicon vias (TSVs) extending from a back side to a... Agent: Fairchild Semiconductor Corporation

20120100671 - Semiconductor package and method of manufacturing the same: A semiconductor package includes a circuit substrate, a semiconductor chip on the circuit substrate, an inner solder ball between the circuit substrate and the semiconductor chip, and dummy solder filling a dummy opening in at least one of an substrate insulation layer of the circuit substrate and a chip insulation... Agent: Samsung Electronics Co., Ltd.

20120100672 - Methods and apparatus for a stacked-die interposer: An improved stacked-die package includes an interposer which improves the manufacturability of the package. A semiconductor package includes a package substrate having a plurality of bond pads; a first semiconductor device mounted on the package substrate, the first semiconductor device having a plurality of bond pads provided thereon; an interposer... Agent: Micron Technology, Inc.

20120100673 - Cross od finfet patterning: A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120100674 - Semiconductor structure and methods of manufacture: FinFET end-implanted-semiconductor structures and methods of manufacture are disclosed herein. The method includes forming at least one mandrel on a silicon layer of a substrate comprising an underlying insulator layer. The method further includes etching the silicon layer to form at least one silicon island under the at least one... Agent: International Business Machines Corporation

20120100675 - Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device: To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120100677 - Method for manufacturing microcrystalline semiconductor and thin film transistor: A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120100676 - Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof: A thin film transistor substrate of horizontal electric field type liquid crystal display device includes: a gate line and a common line arranged in parallel on a substrate; a data line crossing the gate line and the common line to define a pixel area; a thin film transistor having a... Agent:

20120100678 - Method for forming semiconductor device: A method of forming a semiconductor device includes the following processes. A first interlayer insulating film is formed over a cell transistor and a peripheral transistor. A cell contact hole is formed in the first interlayer insulating film, the cell contact hole reaching the cell transistor. A lower contact plug... Agent: Elpida Memory, Inc.

20120100679 - Thick gate oxide for ldmos and demos: A process of forming an integrated circuit, including forming a dummy oxide layer for ion implanting low voltage transistors, replacing the dummy oxide in the low voltage transistor area with a thinner gate dielectric layer, and retaining the dummy oxide for a gate dielectric for a DEMOS or LDMOS transistor.... Agent: Texas Instruments Incorporated

20120100680 - Low temperature implant scheme to improve bjt current gain: A process of forming an integrated circuit containing an npn BJT and an NMOS transistor by cooling the integrated circuit substrate to 5° C. or colder and concurrently implanting n-type dopants, at a specified minimum dose according to species, into the emitter region of the BJT and the source and... Agent: Texas Instruments Incorporated

20120100681 - Method of manufacturing source/drain structures: An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120100682 - Manufactruing method of semiconductor device having vertical type transistor: A manufacturing method of a semiconductor device includes the steps of: forming an insulating pillar on the main surface of a silicon substrate; forming a protective film on the side surface of the insulating pillar; forming a silicon pillar on the main surface of the silicon substrate; forming a gate... Agent: Elpida Memory, Inc.

20120100683 - Trench-typed power mos transistor and method for making the same: A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the gate conductor and a well region. A thick sidewall region of the isolation layer is formed between the gate... Agent: Ptek Technology Co., Ltd.

20120100684 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device includes sequentially forming a first gate insulating layer and a second gate insulating layer on a substrate, implanting impurity ions into the substrate and performing a first thermal process for activating the impurity ions to form a source and drain region, and forming... Agent: Samsung Electronics Co., Ltd.

20120100685 - Localized implant into active region for enhanced stress: Methods for enhancing strain in an integrated circuit are provided. Embodiments of the invention include using a localized implant into an active region prior to a gate etch. In another embodiment, source/drain regions adjacent to the gates are recessed to allow the strain to expand to full potential. New source/drain... Agent: International Business Machines Corporation

20120100686 - Method of forming ultra-shallow junctions in semiconductor devices: A method of forming ultra-shallow lightly doped source/drain (LDD) regions of a CMOS transistor in a surface of a substrate includes the steps of providing a semiconductor substrate, providing a gate stack on the semiconductor substrate, performing a low temperature pocket implantation process on the substrate, performing a low temperature... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120100687 - Methods for fabricating capacitor and methods for fabricating semiconductor device including the capacitor: Example embodiments relate to methods for fabricating a capacitor and methods for fabricating a semiconductor device including the capacitor. The methods for fabricating a capacitor may include forming a preliminary lower electrode with a first area on a substrate; implanting ions in the preliminary lower electrode to form a lower... Agent: Samsung Electronics Co., Ltd.

20120100688 - Self-aligned electrode phase change memory: A phase change memory may be formed with an upper electrode self-aligned to a phase change memory element. In some embodiments, patterning techniques may be used to form the elements of the memory. The memory element may be formed as a sidewall spacer formed on both opposed sides of an... Agent:

20120100689 - Mim capacitor and associated production method: An MIM capacitor includes a first capacitor electrode, which is formed in the surface of a first intermediate dielectric, a second intermediate dielectric, which is formed on the first intermediate dielectric and has an opening that exposes the first capacitor electrode, and a first electrically conducting diffusion barrier layer, which... Agent: Infineon Technologies Ag

20120100690 - Method for manufacturing a heterostructure aiming at reducing the tensile stress condition of the donor substrate: A method for manufacturing a heterostructure for applications in the fields of electronics, photovoltaics, optics or optoelectronics, by implanting atomic species in a donor substrate so as to form an embrittlement area therein, assembling a receiver substrate on the donor substrate, wherein the receiver substrate has a larger thermal expansion... Agent: Institute Of Microbiology, Chinese Academy Of Sciences

20120100692 - Methods of fabricating semiconductor structures and devices with strained semiconductor material: Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within... Agent: Soitec

20120100691 - Processes for fabricating heterostructures: The invention relates to a process for fabricating a heterostructure. This process comprises heating an intermediate heterostructure. The intermediate heterostructure comprises a crystalline strain relaxation layer interposed directly between a first substrate and a strained layer of crystalline semiconductor material. The process further comprises causing plastic deformation of the crystalline... Agent: Soitec

20120100694 - Dividing method for wafer having die bonding film attached to the back side thereof: A wafer is divided into individual devices along division lines formed on the front side of the wafer. The devices are respectively formed in a plurality of regions partitioned by the division lines. A protective member is provided on the front of the wafer, and the back of the wafer... Agent: Disco Corporation

20120100693 - Semiconductor device and manufacturing method thereof: A method for manufacturing a semiconductor device formed by fractionization and division after a plurality of semiconductor elements are formed over a semiconductor substrate, includes forming a first resist portion over the semiconductor substrate prior to its fractionization. Trenches are formed in areas for dicing the semiconductor substrate. A second... Agent:

20120100695 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device according to one embodiment includes attaching a front-side protecting member to a first main surface of a semiconductor wafer having an element region formed therein; laser-dicing the semiconductor wafer by applying a laser beam from a second main surface opposite to the first... Agent: Kabushiki Kaisha Toshiba

20120100696 - Workpiece dividing method: A workpiece has a substrate and a film formed on the front side of the substrate. A first laser beam applied to the film from the front side of the workpiece along streets formed on the film, thereby forming a plurality of laser processed grooves along the streets. An adhesive... Agent: Disco Corporation

20120100697 - Film for semiconductor and semiconductor device manufacturing method: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer... Agent:

20120100701 - Method for cleaning silicon wafer, and method for producing epitaxial wafer using the cleaning method: A silicon wafer after being subjected to mirror polishing but before being subjected to form an epitaxial layer thereon is subjected to an ozone gas treatment that oxidizes a surface of the silicon wafer by use of ozone gas, a hydrofluoric acid gas treatment that dissolves and removes the oxidized... Agent:

20120100700 - Method for fabricating non-volatile memory device: A method for fabricating a non-volatile memory device includes repeatedly stacking interlayer dielectric layers and gate conductive layers on a substrate; etching the interlayer dielectric layers and the gate conductive layers to form cell channel holes that expose the substrate, forming a protective layer along a resultant structure, forming a... Agent:

20120100698 - Method for forming an aluminum nitride thin film: The method is adapted for forming an aluminum nitride thin film having a high density and a high resistance to thermal shock by a chemical vapor deposition process and includes steps of mixing a gas containing aluminum atoms (Al) and a gas containing nitrogen atoms (N) with a gas containing... Agent: Shin-etsu Chemical Co., Ltd.

20120100699 - Methods of making quantum dot films: In an example embodiment, an optical device includes an integrated circuit, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region. In another example embodiment, a method of forming a nanocrystalline... Agent: Invisage Technologies, Inc.

20120100702 - Method of forming a semiconductor device: A method for forming a semiconductor device includes the following processes. A first well including a memory cell region of a semiconductor substrate is formed. A second well including a first peripheral circuit region of the semiconductor substrate is formed after forming the first well.... Agent: Elpida Memory, Inc.

20120100703 - Ion implantation system and ion implantation method using the same: According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion... Agent: Samsung Mobile Display Co., Ltd.

20120100704 - Semiconductor device with vertical transistor and method for fabricating the same: A semiconductor device with a vertical transistor includes a plurality of active pillars; a plurality of vertical gates surrounding sidewalls of the active pillars; a plurality of word lines having exposed sidewalls whose surfaces are higher than the active pillars and connecting the adjacent vertical gates together; and a plurality... Agent:

20120100705 - Method for forming memory cell transistor: A method for forming a memory cell transistor is disclosed which includes providing a substrate, forming a trench structure in the substrate, depositing a conductive substance on the surface of the substrate to form a conductive member inside the trench structure, forming one or more dielectric layers on the surface... Agent: Hermes Microvision, Inc.

20120100706 - Microelectronic fabrication methods using composite layers for double patterning: Some embodiments provide microelectronic fabrication methods in which a sacrificial pattern is formed on a substrate. A spacer formation layer is formed on the substrate, the spacer formation layer covering the sacrificial pattern. The spacer formation layer is etched to expose an upper surface of the sacrificial pattern and to... Agent:

20120100707 - Method for fabricating non-volatile memory device with three-dimensional structure: A method for fabricating a non-volatile memory device with a three-dimensional structure includes forming a pipe gate conductive layer on a substrate, forming a pipe channel hole in the pipe gate conductive layer, burying a first sacrificial layer in the pipe channel hole, stacking interlayer dielectric layers and gate conductive... Agent:

20120100708 - Methods of forming integrated circuit devices having anisotropically-oxidized nitride layers: Methods of forming integrated circuit devices include forming a gate electrode on a substrate and forming a nitride layer on a sidewall and upper surface of the gate electrode. The nitride layer is then anisotropically oxidized under conditions that cause a first portion of the nitride layer extending on the... Agent:

20120100709 - Plating apparatus and plating method: A plating apparatus allows a substrate holder to be serviced easily while ensuring easy access to the substrate holder and while a substrate is being processed in the plating apparatus. The plating apparatus includes a plating section for plating a substrate, a substrate holder for holding the substrate, a substrate... Agent:

20120100710 - Method and apparatus for manufacturing semiconductor device: A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained... Agent: Jusung Engineering Co., Ltd.

20120100711 - Single chip semiconductor coating structure and manufacturing method thereof: A manufacturing method of a single chip semiconductor coating structure includes following steps. Step 1 is providing a single chip semiconductor which has a plurality of surfaces, and two opposite surfaces selected from the plurality of surfaces are manufacturing surfaces and have a conductive area with a pad thereon, respectively.... Agent: Inpaq Technology Co., Ltd.

20120100712 - Structure of power grid for semiconductor devices and method of making the same: An embodiment of the invention provides a semiconductor structure, which may include a stud of a first conductive material formed inside a dielectric layer; a via of a second conductive material having a bottom and sidewalls with the bottom and the sidewalls being covered by a conductive liner, and the... Agent: International Business Machines Corporation

20120100713 - Method for manufacturing semiconductor device: A semiconductor device and a method for forming the same are disclosed. In the method for manufacturing the semiconductor device, a lower electrode material is deposited over a semiconductor substrate including a lower electrode contact plug so as to form a sacrificial insulation film. After the sacrificial insulation film and... Agent: Hynix Semiconductor Inc.

20120100714 - Method of fabricating a landing plug in a semiconductor device: A method of fabricating a landing plug in a semiconductor memory device, which in one embodiment includes forming a landing plug contact hole on a semiconductor substrate having an impurity region to expose the impurity region; forming a landing plug by filling the landing plug contact hole with a polysilicon... Agent: Hynix Semiconductor Inc.

20120100715 - Method of manufacturing a semiconductor device including through electrode: The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from... Agent: Renesas Electronics Corporation

20120100716 - Method to improve reliability (em and tddb) with post silylation plasma treatment process for copper damascene structures: A method for semiconductor fabrication includes etching a via and a trench in a dielectric material to yield an etched surface. The dielectric material may have an ultra-low K value (e.g., a K-value of less than or equal to 2.4). The etched surface is then processed with a gas-phase silylation... Agent: Globalfoundries Singapore Pte., Ltd

20120100717 - Trench lithography process: A process of forming an integrated circuit using a dual damascene interconnect process by etching a via hole in an ILD and filling the via hole with a sacrificial via fill material. A trench etch hard mask layer is formed over the ILD. An inorganic hard mask layer is formed... Agent: Texas Instruments Incorporated

20120100718 - Cmp fluid and method for polishing palladium: The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and... Agent: Hitachi Chemical Company, Ltd.

20120100719 - Method for making a planar membrane: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in... Agent: Commisariat A L'energie Atomique Et Aux Ene Alt

20120100720 - Silicon etch with passivation using plasma enhanced oxidation: A method of etching a silicon layer through a patterned mask is provided. The method uses an etch chamber in which the silicon layer is placed. The method includes (a) providing the silicon layer having the patterned mask formed thereon, (b) providing an etch gas comprising a fluorine containing gas... Agent: Lam Research Corporation

20120100721 - Method for treating a semiconductor wafer: A method for treating semiconductor wafer includes: providing a stack including a high-k layer including a first oxide material, wherein the first oxide material contains hafnium and/or zirconium, and a cap-layer including a second oxide material, wherein the cap-layer has been deposited on top of the high-k layer, wherein the... Agent: Lam Research Ag

20120100722 - Substrate processing apparatus and semiconductor device manufacturing method: Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating... Agent: Hitachi Kokusai Electric Inc.

20120100723 - Combinatorial plasma enhanced deposition techniques: Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein... Agent: Intermolecular

20120100724 - Combinatorial plasma enhanced deposition techniques: Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein... Agent: Intermolecular

20120100725 - Adhesiveness of fluorocarbon (cfx) film by doping of amorphous carbon: A method of forming an amorphous carbon layer on an insulating layer includes the step of forming an amorphous carbon layer using a plasma reaction process. The amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a CxHy series gas, a silicon-containing gas, and an oxygen-containing... Agent: Tokyo Electron Limited

20120100726 - Methods of forming silicon oxides and methods of forming interlevel dielectrics: A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the... Agent:

20120100727 - Method of manufacturing semiconductor device, apparatus for manufacturing same, and storage medium: A method of manufacturing a semiconductor device includes steps of: generating positively or negatively charged fine bubbles having substantially zero buoyancy in a coating solution as an insulating film forming material; coating the coating solution including the bubbles on a substrate to form a coating film; and baking the coating... Agent: Tokyo Electron Limited

20120100728 - Systems and methods for forming a time-averaged line image: Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that... Agent: