|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 02/27/2014 > 93 patent applications in 70 patent subcategories.
20140057369 - Methods for forming interconnection line using screen printing technique: Methods of forming an interconnection line pattern using a screen printing technique. The method includes preparing a substrate having unevenness, aligning a stencil mask on the substrate, and printing a paste including materials for forming the interconnection line pattern on a convex portion of the unevenness formed on the substrate.... Agent: Sk Hynix Inc.
20140057370 - Dual wafer spin coating: A method of bonding a first substrate and a second substrate includes the steps of rotating first substrate with an adhesive mass thereon, and second substrate contacting the mass and overlying the first substrate, controlling a vertical height of a heated control platen spaced apart from and not contacting the... Agent: Tessera, Inc.
20140057371 - High productivity combinatorial workflow for post gate etch clean development: Combinatorial workflow is provided for evaluating cleaning processes after forming a gate structure of transistor devices, to provide optimized process conditions for gate stack formation, including metal gate stack using high-k dielectrics. NMOS and PMOS transistor devices are combinatorially fabricated on multiple regions of a substrate, with each region exposed... Agent: Intermolecular Inc.
20140057372 - Method for on-wafer high voltage testing of semiconductor devices: A method for wafer high voltage testing of semiconductor devices is disclosed. The method involves adding a patterning layer onto a passivation layer of the semiconductor devices and then etching vias through the passivation layer to expose conductive test points. Testing of the semiconductor devices begins with engaging the conductive... Agent:
20140057373 - Modular printhead for oled printing: The disclosure generally relates to a modular printhead configured for ease of access and quick replacement of the printhead. In one embodiment, the disclosure is directed to an integrated printhead which includes: a printhead die supporting a plurality of micropores thereon; a support structure for supporting the printhead die; a... Agent: Kateeva, Inc.
20140057374 - Optical-semiconductor device: The present invention relates to an optical-semiconductor device, which is prepared by: arranging a sheet for optical-semiconductor element encapsulation including an encapsulating resin layer capable of embedding an optical-semiconductor element and a wavelength conversion layer containing light wavelength-converting particles and being laminated directly or indirectly on the encapsulating resin layer,... Agent: Nitto Denko Corporation
20140057376 - Deposition donor substrate and method for manufacturing light-emitting device: One surface of a first substrate provided with at least light-absorbing layers separately formed, partition layers each formed between the light-absorbing layers and having an inverse taper shape, and material layers formed on the light-absorbing layers and on the partition layers so that the material layers are separated from each... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140057377 - Method for manufacturing device: A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the... Agent: Marubun Corporation
20140057375 - Wavelength converting material deposition methods and associated articles: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.... Agent: Luminus Devices, Inc.
20140057378 - Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus: An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active... Agent: Samsung Display Co., Ltd.
20140057380 - Nitride-type semiconductor element and process for production thereof: A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x≧0, y>0, z≧0) semiconductor, which has... Agent: Panasonic Corporation
20140057379 - Photoresist film and manufacturing method for organic light emitting display device using the same: Disclosed is a photoresist film including a light-to-heat conversion layer on a support film, and a thermo-responsive polymer layer on the light-to-heat conversion layer, wherein the photoresist film is easily detached from a transfer substrate through a temperature adjustment and detach film since the photoresist film includes thermo-responsive polymer.... Agent: Lg Display Co., Ltd.
20140057381 - Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer... Agent: Samsung Electronics Co., Ltd.
20140057382 - Methods for fabricating mems structures by etching sacrificial features embedded in glass: In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure in a doped layer proximate a first surface of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure having a first one... Agent: Honeywell International Inc.
20140057383 - Method of producing wafer for solar cell, method of producing solar cell, and method of producing solar cell module: A method of producing a wafer for a solar cell according to the present invention comprises a first step of contacting lower alcohol to at least one surface of the semiconductor wafer and a second step, after the first step, of contacting hydrofluoric acid containing metal ion to the at... Agent: Sumco Corporation
20140057384 - Solar cell and fabricating method thereof: Discussed herein are a solar cell and a fabricating method thereof. The solar cell includes a first conductivity-type semiconductor substrate, a second conductivity-type semiconductor layer formed on a front surface of the first conductivity-type semiconductor substrate, and having a conductivity opposite to that of the first conductivity-type semiconductor substrate, an... Agent: Lg Electronics Inc.
20140057385 - Iii-v photovoltaic element and fabrication method: A solar cell structure includes stacked layers in reverse order on a germanium substrate. A heterostructure including an (In)GaAs absorbing layer and a disordered emitter layer is provided in the solar cell structures. Controlled spalling may be employed as part of the fabrication process for the solar cell structure, which... Agent: International Business Machines Corporation
20140057386 - Systems and methods for depositing and charging solar cell layers: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer... Agent: Amtech Systems, Inc.
20140057387 - Systems and methods for depositing and charging solar cell layers: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer... Agent: Amtech Systems, Inc.
20140057388 - Systems and methods for depositing and charging solar cell layers: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer... Agent: Amtech Systems, Inc.
20140057389 - Photovoltaic back contact: A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface.... Agent: First Solar, Inc.
20140057390 - Multi-nozzle organic vapor jet printing: Systems and methods are provided in which individual elements of a thin patterned film are deposited by two or more nozzles having different geometries. The different nozzle geometries may include one or more of different throttle diameters, different exhaust diameters, different cross-sectional shapes, different bore angles, different wall angles, different... Agent: Universal Display Corporation
20140057391 - Carrier warpage control for three dimensional integrated circuit (3dic) stacking: An embodiment method of forming a package-on-package (PoP) device includes temporarily mounting a substrate on a carrier, stacking a first die on the substrate, at least one of the die and the substrate having a coefficient of thermal expansion mismatch relative to the carrier, and stacking a second die on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140057392 - Copper post solder bumps on substrates: A method comprises forming semiconductor flip chip interconnects having electrical connecting pads and electrically conductive posts terminating in distal ends operatively associated with the pads. We solder bump the distal ends by injection molding, mask the posts on the pads with a mask having a plurality of through hole reservoirs... Agent: International Business Machines Corporation
20140057394 - Method for making a double-sided fanout semiconductor package with embedded surface mount devices, and product made: A manufacturing process includes forming a reconstituted wafer, including embedding semiconductor dice in a molding compound layer and forming through-wafer vias in the layer. A fan-out redistribution layer is formed on a front side of the wafer, with electrical traces interconnecting the dice, through-wafer vias, and contact pads positioned on... Agent: Stmicroelectronics (grenoble 2) Sas
20140057393 - Semiconductor device package and methods of packaging thereof: In one embodiment of the present invention, a method of forming a semiconductor device includes forming a device region in a first region of a semiconductor substrate, and forming an opening in a second region of the semiconductor substrate. The method further includes placing a semiconductor die within the opening,... Agent: Infineon Technologies Ag
20140057395 - Semiconductor housing and method for the production of a semiconductor housing: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially... Agent: Micronas Gmbh
20140057396 - Method of manufacturing a component comprising cutting a carrier: A method of manufacturing a component is disclosed. An embodiment of the method comprises dicing a carrier in a plurality of components, the carrier being disposed on a support carrier, after dicing, placing a connection layer on the carrier and removing the components from the support carrier.... Agent: Infineon Technologies Ag
20140057397 - Diode-triggered silicon controlled rectifier with an integrated diode: Device structures, design structures, and fabrication methods for a silicon controlled rectifier. A well of a first conductivity type is formed in a device region, which may be defined from a device layer of a semiconductor-on-insulator substrate. A doped region of a second conductivity type is formed in the well.... Agent: International Business Machines Corporation
20140057398 - Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor: A memory cell includes a thyristor having a plurality of alternately doped, vertically superposed semiconductor regions; a vertically oriented access transistor having an access gate; and a control gate operatively laterally adjacent one of the alternately doped, vertically superposed semiconductor regions. The control gate is spaced laterally of the access... Agent: Micron Technology, Inc.
20140057399 - Using fast anneal to form uniform ni(pt)si(ge) contacts on sige layer: Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a cap layer-free method for forming a silicide is provided. The method includes the following steps. A semiconductor material selected from: silicon and silicon germanium is provided. At least one silicide metal... Agent: International Business Machines Corporation
20140057400 - Thin film transistor manufacturing method: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT,... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.
20140057401 - Compound semiconductor device with mesa structure: A compound semiconductor device having mesa-shaped element region, and excellent characteristics are provided. The compound semiconductor device has: an InP substrate; an epitaxial lamination mesa formed above the InP substrate and including a channel layer, a carrier supply layer above the channel layer and a contact cap layer above the... Agent: Fujitsu Limited
20140057402 - Methods of forming memory arrays and semiconductor constructions: Some embodiments include methods of forming semiconductor constructions. A heavily-doped region is formed within a first semiconductor material, and a second semiconductor material is epitaxially grown over the first semiconductor material. The second semiconductor material is patterned to form circuit components, and the heavily-doped region is patterned to form spaced-apart... Agent: Micron Technology, Inc.
20140057403 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device is provided. A fin of a first conductivity type is formed on a substrate of the first conductivity type. A gate is formed on the substrate, wherein the gate covers a portion of the fin. Source and drain regions of a second conductivity... Agent: United Microelectronics Corp.
20140057404 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate; etching the substrate on both sides of the gate stack to form C-shaped source/drain grooves; and wet-etching the C-shaped source/drain grooves to form Σ-shaped source/drain grooves. With this... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences
20140057405 - Method of fabricating p-type surface-channel ldmos device with improved in-plane uniformity: A method of fabricating a P-type surface-channel laterally diffused metal oxide semiconductor device includes forming a gate structure with polysilicon and metal silicide, and the processes of channel implantation, long-time high-temperature drive-in, formation of a heavily doped N-type polysilicon sinker and boron doping of a polysilicon gate, are performed in... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20140057406 - Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell: An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of... Agent: Micron Technology, Inc.
20140057407 - High voltage resistor: Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140057408 - Rectangular capacitors for dynamic random access memory (dram) and dual-pass lithography methods to form the same: A rectangular capacitor for dynamic random access memory (DRAM) and a dual-pass lithography method to form the same are described. For example, a capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. A cup-shaped metal plate is disposed along the bottom and sidewalls of the... Agent:
20140057409 - Isolation structure profile for gap filing: An trench isolation structure and method for manufacturing the trench isolation structure are disclosed. An exemplary trench isolation structure includes a first portion and a second portion. The first portion extends from a surface of a semiconductor substrate to a first depth in the semiconductor substrate, and has a width... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140057411 - Dicing before grinding after coating: This invention is a method for singulating a semiconductor wafer into individual semiconductor dies, the top surface of the semiconductor wafer bumped with metallic pre-connections and having a coating of underfill disposed over and around the metallic pre-connection bumps. The method comprises (A) providing a semiconductor wafer having a top... Agent: Henkel USIPLLC
20140057410 - Method of fabricating a packaging substrate: A method of fabricating a packaging substrate is provided, including: providing a carrier having two carrying portions, each of the carrying portions having a first side and a second side opposite to the first side and the carrying portions are bonded through the second sides thereof; forming a circuit layer... Agent: Siliconware Precision Industries Co., Ltd.
20140057414 - Mask residue removal for substrate dicing by laser and plasma etch: Methods of dicing substrates having a plurality of ICs. A method includes forming a mask and patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is etched through the gaps in... Agent:
20140057412 - Method for fusing a laser fuse and method for processing a wafer: A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam.... Agent: Infineon Technologies Ag
20140057413 - Methods for fabricating devices on semiconductor substrates: m
20140057417 - Method for producing an optoelectronic semiconductor chip: A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate... Agent: Osram Opto Semiconductors Gmbh
20140057415 - Methods of forming a layer of silicon on a layer of silicon/germanium: Disclosed herein are various methods of forming a layer of silicon on a layer of silicon/germanium. In one example, a method disclosed herein includes forming a silicon/germanium material on a semiconducting substrate, after forming the silicon/germanium material, performing a heating process to raise a temperature of the substrate to a... Agent: Globalfoundries Inc.
20140057416 - Semiconductive micro- and nano-wire array manufacturing: The disclosure provides methods of manufacturing semiconductive structures using stamping and VLS techniques.... Agent:
20140057418 - Method for manufacturing a semiconductor device: The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also... Agent:
20140057419 - Method for forming low temperature polysilicon thin film: Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can comprise: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an... Agent: Boe Technology Group Co., Ltd.
20140057420 - Process for producing a polycrystalline layer: A process is provided for producing a polycrystalline layer. This process includes the steps of: applying to a substrate a layer sequence comprising at least one amorphous starting layer provided with impurities, a metallic activator layer, and a cleaning layer based on titanium or titanium oxide arranged between the starting... Agent: Dritte Patentportfolio Beteiligungsgesellschaft Mbh & Co. Kg
20140057421 - Semiconductor device production method: A semiconductor device production method includes: forming a protection film on a semiconductor substrate; forming a first resist pattern on the protection film; implanting a first impurity ion into the semiconductor substrate using the first resist pattern as a mask; removing the first resist pattern; forming on the surface of... Agent: Fujitsu Semiconductor Limited
20140057422 - Method of forming a memory cell by reducing diffusion of dopants under a gate: A method of forming a memory cell includes forming a conductive floating gate over the substrate, forming a conductive control gate over the floating gate, forming a conductive erase gate laterally to one side of the floating gate and forming a conductive select gate laterally to an opposite side of... Agent: Silicon Storage Technology, Inc.
20140057423 - Method for transferring inp film: A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20140057424 - Method for manufacturing silicon carbide semiconductor device: A silicon carbide substrate is prepared which has a main surface covered with a silicon dioxide layer. In the silicon dioxide layer, an opening is formed by etching. In the opening, a residue resulting from the etching is on the silicon carbide substrate. The residue is removed by plasma etching... Agent:
20140057425 - Gate tunable tunnel diode: A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel... Agent: International Business Machines Corporation
20140057426 - Non-volatile memory structure employing high-k gate dielectric and metal gate: A high dielectric constant (high-k) gate dielectric for a field effect transistor (FET) and a high-k tunnel dielectric for a non-volatile random access memory (NVRAM) device are simultaneously formed on a semiconductor substrate. A stack of at least one conductive material layer, a control gate dielectric layer, and a disposable... Agent: International Business Machines Corporation
20140057427 - Method for manufacturing semiconductor device: Example embodiments relate to a method for manufacturing a semiconductor device, wherein a metal gate electrode therein may be formed without a void in a lower portion of the metal gate electrode. The method may include providing a substrate, forming a dummy gate electrode on the substrate, forming a gate... Agent: Samsung Electronics Co., Ltd.
20140057428 - Buffer layer for sintering: A layer of material having a low thermal conductivity is coated over a substrate. A film of conductive ink is then coated over the layer of material having the low thermal conductivity, and then sintered. The film of conductive ink does not absorb as much energy from the sintering as... Agent: Applied Nanotech Holdings, Inc.
20140057429 - Method of forming a step pattern structure: A method of forming a multi-floor step pattern structure includes forming a stacked structure having alternating insulating interlayers and sacrificial layers on a substrate. A first photoresist pattern is formed on the stacked structure. A first preliminary step pattern structure is formed by etching portions of the stacked structure using... Agent: Samsung Electronics Co., Ltd.
20140057430 - Semiconductor device, fabricating method thereof and semiconductor package including the semiconductor device: In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via... Agent: Samsung Electronics Co., Ltd.
20140057431 - Methods and apparatus of packaging semiconductor devices: Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140057433 - Pixel capacitors: A technique comprising: forming laterally-extending switching circuitry of a device for controlling an overlying laterally-extending array of pixel conductors of said device; forming an electrically conductive laterally-extending patterned screen over said switching circuitry via a first insulating region, said patterned screen defining holes for receiving conductive interlayer connects between said... Agent: Plastic Logic Limited
20140057432 - Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the same: A method for manufacturing a semiconductor device includes forming a first interconnect over the semiconductor substrate; forming an interlayer dielectric film over the first interconnect; forming a hole in the interlayer dielectric film such that the hole reaches the first interconnect; forming a trench in the interlayer dielectric film; and... Agent: Renesas Electronics Corporation
20140057434 - Through silicon via process: A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.... Agent:
20140057435 - Methods of forming a metal cap layer on copper-based conductive structures on an integrated circuit device: Disclosed herein are various methods of forming a metal cap layer on copper-based conductive structures on integrated circuit devices, and integrated circuit devices having such a structure. In one example, the method includes the steps of forming a conductive feature comprised of copper in a layer of insulating material, performing... Agent: Globalfoundries Inc.
20140057436 - Three photomask sidewall image transfer method: A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of... Agent: International Business Machines Corporation
20140057437 - Rinsing agent for lithography, method for forming a resist pattern, and method for producing a semiconductor device: To provide a rinsing agent for lithography, which contains C6-C8 straight-chain alkanediol, and water.... Agent:
20140057438 - Polishing method of non-oxide single-crystal substrate: There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a... Agent: Asahi Glass Company, Limited
20140057439 - Method of forming interlayer dielectrics: A method of forming interlayer dielectric comprising the steps of forming a first undoped layer, forming in-situ and sequentially a doped layer and a second undoped layer on the first undoped layer, and planarizing the second undoped layer.... Agent:
20140057440 - Methods of forming a semiconductor device: A method of forming a semiconductor device includes first preliminary holes over an etch target, the first preliminary holes arranged as a plurality of rows in a first direction, forming dielectric patterns each filling one of the first preliminary holes, sequentially forming a barrier layer and a sacrificial layer on... Agent: Samsung Electronics Co., Ltd.
20140057441 - Method for forming pattern and method for fabricating semiconductor device: A method for forming a pattern according to an embodiment, includes forming above a first film film patterns of a second film; forming film patterns of the first film by etching the first film using the film patterns of the second film as a mask; converting the film patterns of... Agent:
20140057444 - Method for manufacturing mems device, method for manufacturing thermal detector, thermal detector, thermal detection device, and electronic instrument: A method for manufacturing a MEMS device having an undercut shape formed on a fixed part includes a first step of forming an etching layer having a first cavity on the fixed part; a second step of forming a mask layer on a side wall of the etching layer, the... Agent: Seiko Epson Corporation
20140057443 - Pattern forming method: According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled... Agent: Kabushiki Kaisha Toshiba
20140057442 - Semiconductor device with silicon-containing hard mask and method for fabricating the same: A semiconductor device includes a semiconductor substrate having an etch target layer provided on the surface thereof, and a hard mask layer formed over the etch target layer and including silicon, wherein the hard mask layer includes a dual structure including a first area and a second area having a... Agent: Sk Hynix Inc.
20140057446 - Method of silicon etch for trench sidewall smoothing: Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of... Agent:
20140057445 - Plasma processing apparatus and plasma processing method: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply... Agent: Hitachi High-technologies Corporation
20140057447 - Semiconductor processing with dc assisted rf power for improved control: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated... Agent: Applied Materials, Inc.
20140057448 - Substrate conveying roller, thin film manufacturing device, and thin film manufacturing method: A substrate-conveying roller includes a first shell, a second shell, an internal block, a manifold, and a clearance. The first shell has a plurality of first through holes serving as supply paths for a gas. The internal block is disposed inside the first shell. The manifold is formed in the... Agent: Panasonic Corporation
20140057449 - Coating method of an alignment film: Provided is a coating method of an alignment film, including: providing a board, having a substrate, the substrate forming an alignment liquid coating area thereon; forming a barrier structure around the alignment liquid coating area; coating an alignment liquid in the alignment liquid coating area, wherein the barrier structure blocks... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.
20140057450 - Wafer bonding system and method for bonding and debonding thereof: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding... Agent:
20140057452 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen... Agent: Hitachi Kokusai Electric Inc.
20140057451 - Method of preventing charge accumulation in manufacture of semiconductor device: A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on... Agent: Samsung Electronics Co., Ltd.
20140057453 - Deposition of thin films on energy sensitive surfaces: A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to... Agent:
20140057454 - Methods and apparatus for plasma-based deposition: High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor... Agent: Novellus Systems, Inc.
20140057455 - Method of improving oxide growth rate of selective oxidation processes: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and... Agent: Applied Materials, Inc.
20140057456 - Substrate processing apparatus and method of manufacturing semiconductor device: The substrate processing apparatus includes a process chamber; a susceptor configured to support a wafer; lifter pins configured to support the wafer on the susceptor; a gas supply unit configured to supply a gas into the process chamber; a heating unit configured to heat the wafer; an excitation unit configured... Agent: Hitachi Kokusai Electric Inc.
20140057457 - Non-melt thin-wafer laser thermal annealing methods: Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed... Agent: Ultratech, Inc.
20140057458 - Method for forming silicon oxide film of semiconductor device: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.... Agent: Sk Hynix Inc.
20140057459 - Plasma processing method and plasma processing system: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing,... Agent: Mitsubishi Heavy Industries, Ltd.
20140057460 - Methods of thermally processing a substrate: The present invention generally relates to methods for thermally processing substrates. In one embodiment, a substrate having an amorphous thin film thereon is subjected to a first pulse of electromagnetic energy. The first pulse of electromagnetic energy has a first fluence insufficient to complete the thermal processing. After a predetermined... Agent: Applied Materials, Inc.
20140057461 - Method for manufacturing silicon carbide semiconductor device: A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is heated in an atmosphere containing oxygen, so as to form a gate insulating film on and in contact with the silicon carbide substrate. The silicon carbide substrate having the gate insulating film... Agent:02/20/2014 > 77 patent applications in 61 patent subcategories.
20140051189 - Method for wafer-level testing diced multi-chip stacked packages: Disclosed is a method for wafer-level testing a plurality of diced multi-chip stacked packages. Each package includes a plurality of chips with vertically electrical connections such as TSVs. Next, according to a die-on-wafer array arrangement, the multi-chip stacked packages are fixed on a transparent reconstructed wafer by a photo-sensitive adhesive,... Agent:
20140051190 - Method of large-area circuit layout recognition: Methods for detecting the physical layout of an integrated circuit are provided. The methods of the present disclosure allow large area imaging of the circuit layout without requiring tedious sample preparation techniques. The imaging can be performed utilizing low-energy beam techniques such as scanning electron microscopy; however, more sophisticated imaging... Agent: International Business Machines Corporation
20140051191 - Extremely non-degenerate two photon absorption optical sensing method, apparatus and applications: An extremely non-degenerate two photon absorption (END-2PA) method and apparatus provide for irradiating a semiconductor material substrate simultaneously with two photons each of different energy less than a bandgap energy of the semiconductor material substrate but in an aggregate greater than the bandgap energy of the semiconductor material substrate. A... Agent: University Of Central Florida Research Foundation Inc.
20140051192 - Method and carrier substrate for manufacturing display device: A method of manufacturing a display device, the method including forming a first layer on a rigid glass substrate, the first layer having a hydrophobic surface; forming a second layer to be bonded to a rigid thin glass substrate on the first layer to prepare a carrier substrate; bonding the... Agent: Samsung Display Co., Ltd.
20140051193 - Light-emitting element package and fabrication method thereof: A fabrication method for a light-emitting element package, the method comprising: providing a high precision wafer level mold module, the high precision wafer level mold module comprising an upper mold and a bottom mold; mounting a substrate with a plurality of light-emitting elements between the upper mold and the bottom... Agent: Advanced Optoelectronic Technology, Inc.
20140051196 - Method and apparatus for manufacturing optical device: An optical device manufacturing apparatus includes an encapsulating device for encapsulating an optical semiconductor element 4 mounted on a substrate 2 by a liquid resin R in a lens shape, and a curing device for curing the liquid resin R, wherein the encapsulating device includes a dispenser capable of vertically... Agent: Sanyu Rec Co., Ltd.
20140051195 - Method of manufacturing encapsulation structure for encapsulating led chip: A method of manufacturing an encapsulation structure for encapsulating an LED chip includes the following steps: providing a first encapsulation defining a receiving room for receiving the LED chip therein and a second encapsulation defining a receiving space for receiving the first encapsulation therein; providing a mounting tablet defining an... Agent: Advanced Optoelectronic Technology, Inc.
20140051194 - Method of producing at least one optoelectronic semiconductor chip: A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic... Agent: Osram Opto Semiconductors Gmbh
20140051197 - Method for fabricating a vertical light emitting diode (vled) die having epitaxial structure with protective layer: A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer;... Agent: Semileds Optoelectronics Co., Ltd.
20140051198 - Method and apparatus for manufacturing organic el device: Provided is a method for manufacturing an organic EL device, including: a vapor deposition step of forming an organic layer over a substrate moving relative to a nozzle by discharging a vaporized organic layer-forming material through the nozzle. The vapor deposition step is performed so that a light emitting region... Agent: Nitto Denko Corporation
20140051199 - Method for producing silicon solor cells having a front-sided texture and a smooth rear side: Method for producing a silicon solar cell which is smoothly etched on one side, in which a front side and a rear side of a silicon substrate are etched (10) to form a smooth texture, a dielectric coating is then formed (14, 16) on the rear side of the silicon... Agent:
20140051200 - Method for fabricating photo detector: A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions... Agent: Au Optronics Corp.
20140051201 - Silicon surface texturing method for reducing surface reflectance: A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in... Agent: International Business Machines Corporation
20140051202 - Method of fabricating solar cell: A method of fabricating a solar cell includes the following steps. At first, a substrate including a doped layer is provided. Subsequently, a patterned material layer partially overlapping the doped layer is formed on the substrate, and a first metal layer is conformally formed on the patterned material layer and... Agent:
20140051203 - Manufacturing method of solid-state image sensor: A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer... Agent: Panasonic Corporation
20140051204 - Solid-state imaging device, method of manufacturing the same, and imaging apparatus: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a... Agent: Sony Corporation
20140051205 - Method for manufacturing thin film compound solar cell: To manufacture a thin film compound solar cell which can improve the adhesive property of electrodes even when being provided with a base material, and which prevents the base material from being separated. A cell main body configured by laminating a plurality of compound semiconductor layers is formed on a... Agent: Sharp Kabushiki Kaisha
20140051206 - Method and apparatus providing multi-step deposition of thin film layer: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.... Agent: First Solar, Inc
20140051207 - Substrate for organic electronic device: The present invention relates to a substrate for an organic electrode device, a manufacturing method thereof, and an organic electronic device. An exemplary substrate of the invention, if an organic light emitting element is formed on an upper part of the substrate, can obtain luminance with high emission and uniformity... Agent: Lg Chem, Ltd.
20140051208 - Memory cells and methods of forming memory cells: Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the... Agent: Micron Technology, Inc.
20140051209 - Method for manufacturing semiconductor device: Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140051210 - Nonvolatile memory elements: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a... Agent: Intermolecular Inc.
20140051211 - Multichip electronic packages and methods of manufacture: A multi-chip electronic package and methods of manufacture are provided. The multi-chip package includes a plurality of chips mounted on a chip carrier. The multi-chip package further includes a lid mounted on the chip carrier using a bonding material or compression seal, and at least one single piston extending from... Agent: International Business Machines Corporation
20140051212 - Method of fabricating a package substrate: A method of fabricating a package substrate, includes forming a cavity in at least one region of an upper surface of a wafer, the cavity including a chip mounting region, forming a through-hole penetrating through the wafer and a via filling the through-hole, forming a first wiring layer and a... Agent: Samsung Electro-mechanics Co., Ltd.
20140051214 - Floating body field-effect transistors, and methods of forming floating body field-effect transistors: In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is... Agent: Micron Technology, Inc.
20140051215 - Method for making thin film transistor: A method for making a thin film transistor, the method comprising: applying a gate electrode on an insulating substrate; covering the gate electrode with an insulating layer; forming a carbon nanotube layer on a growing substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes; transfer printing the... Agent: Tsinghua University
20140051216 - Replacement gate etsoi with sharp junction: A method includes providing a silicon-on-insulator wafer (e.g., an ETSOI wafer); forming a sacrificial gate structure that overlies a sacrificial insulator layer; forming raised source/drains adjacent to the sacrificial gate structure; depositing an oxide layer that covers the raised source/drains and that surrounds the sacrificial gate structure; and removing the... Agent: International Business Machines Corporation
20140051213 - Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire fet devices: A method of fabricating a nanowire FET device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. Nanowires and pads are etched in the SOI layer. The nanowires are suspended over the BOX. An interfacial oxide is formed surrounding each of the nanowires.... Agent: International Business Machines Corporation
20140051217 - Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or... Agent: International Business Machines Corporation
20140051218 - Thin film semiconductor device comprising a polycrystalline semiconductor layer formed on an insulation layer having different thickness: In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal... Agent: Samsung Display Co., Ltd.
20140051219 - Semiconductor device and method of manufacturing the same: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this... Agent: Renesas Electronics Corporation
20140051220 - Method for fabricating semiconductor device with reduced miller capacitance: A method for fabricating a semiconductor transistor device. An epitaxial layer is grown on a semiconductor substrate. A gate trench is formed in the epitaxial layer. A spacer is formed on a sidewall of the gate trench. A recess is formed at the bottom of the gate trench. A thermal... Agent: Anpec Electronics Corporation
20140051221 - Controlling lateral two-dimensional electron hole gas hemt in type iii nitride devices using ion implantation through gray scale mask: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.... Agent: Hrl Laboratories, LLC
20140051222 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, patterning the first insulating film to form a first and a second opening, forming a first sidewall film on side walls of the first and the second openings, etching the semiconductor substrate with... Agent: Fujitsu Semiconductor Limited
20140051223 - Memory device having an integrated two-terminal current limiting resistor: A resistor structure incorporated into a resistive switching memory cell or device to form memory devices with improved device performance and lifetime is provided. The resistor structure may be a two-terminal structure designed to reduce the maximum current flowing through a memory device. A method is also provided for making... Agent: Kabushiki Kaisha Toshiba
20140051224 - Method of back-side patterning: A method of back-side patterning of a silicon wafer is disclosed, which includes: depositing a protective layer on a front side of a silicon wafer; forming one or more deep trenches through the protective layer and extending into the silicon wafer by a depth greater than a target thickness of... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20140051225 - Techniques for gate workfunction engineering to reduce short channel effects in planar cmos devices: Techniques for gate workfunction engineering using a workfunction setting material to reduce short channel effects in planar CMOS devices are provided. In one aspect, a method of fabricating a CMOS device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. A patterned dielectric... Agent: International Business Machines Corporation
20140051226 - Growth of multi-layer group iii-nitride buffers on large-area silicon substrates and other substrates: A method includes forming a first epitaxial layer over a semiconductor substrate and etching the first epitaxial layer to form multiple separated first epitaxial regions. The method also includes forming a second epitaxial layer over the etched first epitaxial layer. Each epitaxial layer includes at least one Group III-nitride, and... Agent: National Semiconductor Corporation
20140051228 - Method for producing vias: m
20140051227 - Methods of forming isolation structures for semiconductor devices by performing a dry chemical removal process: A method includes forming a patterned mask comprised of a polish stop layer positioned above a protection layer above a substrate, performing at least one etching process through the patterned mask layer on the substrate to define a trench in the substrate, and forming a layer of silicon dioxide above... Agent: Globalfoundries Inc.
20140051230 - Methods for forming semiconductor device structures: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140051229 - Sub-10 nm graphene nanoribbon lattices: A graphene lattice comprising an ordered array of graphene nanoribbons is provided in which each graphene nanoribbon in the ordered array has a width that is less than 10 nm. The graphene lattice including the ordered array of graphene nanoribbons is formed by utilizing a layer of porous anodized alumina... Agent: International Business Machines Corporation
20140051231 - Method for permanently bonding wafers: g
20140051232 - Semiconductor die singulation method: In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and fluid... Agent:
20140051233 - Methods of thinning and/or dicing semiconducting substrates having integrated circuit products formed thereon: One illustrative method disclosed herein includes forming a plurality of die above a crystalline semiconducting substrate, irradiating and cooling an edge region of the substrate to form an amorphous region in the edge region of the substrate and, after forming the amorphous region, performing at least one process operation to... Agent: Globalfoundries Inc.
20140051234 - Hydrogen passivation of integrated circuits: An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.... Agent:
20140051236 - Gan-based schottky barrier diode with field plate: A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer... Agent: Avogy, Inc.
20140051235 - Method for producing single crystal sic substrate and single crystal sic substrate produced by the same: A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step of... Agent: Air Water Inc.
20140051237 - Semiconductor ink composition: A representative printable composition comprises a liquid or gel suspension of a plurality of substantially spherical semiconductor particles; and a first solvent comprising a polyol or mixtures thereof, such as glycerin; and a second solvent different from the first solvent, the second solvent comprising a carboxylic or dicarboxylic acid or... Agent: Nthdegree Technologies Worldwide Inc.
20140051238 - Method for producing semiconductor device: A first resist layer (46a) and a second resist layer (46b) that is thicker than the first resist layer (46a) are formed using a multi-gradient mask, a conductive film (44) is isotropically etched with both resist layers (46a, 46b) as masks, gate electrodes (34a, 34b) are formed narrower than the... Agent: Sharp Kabushiki Kaisha
20140051239 - Disposable carbon-based template layer for formation of borderless contact structures: After formation of gate stacks, a carbon-based template layer is deposited over the gate stacks, and is optionally planarized to provide a planar top surface. A hard mask layer and a photoresist layer are subsequently formed above the carbon-based template layer. A pattern including openings is formed within the photoresist... Agent: International Business Machines Corporation
20140051240 - Methods of forming a replacement gate structure having a gate electrode comprised of a deposited intermetallic compound material: Disclosed herein are various methods of forming a replacement gate structure with a gate electrode comprised of a deposited intermetallic compound material. In one example, the method includes removing at least a sacrificial gate electrode structure to define a gate cavity, forming a gate insulation layer in the gate cavity,... Agent: Globalfoundries Inc.
20140051241 - Method for manufacturing silicon carbide semiconductor device: A surface of a silicon carbide substrate on which a graphite layer is formed is covered with a metal layer which can form carbide. Then, the silicon carbide substrate is annealed to cause reaction between a metal in the metal layer which can form carbide and carbon in the graphite... Agent: Fuji Electric Co., Ltd.
20140051242 - Conductive metallic and semiconductor ink composition: A representative printable composition comprises a liquid or gel suspension of a plurality of metallic particles; a plurality of semiconductor particles; and a first solvent. The pluralities of particles may also be comprised of an alloy of a metal and a semiconductor. The composition may further comprise a second solvent... Agent: Nthdegree Technologies Worldwide Inc.
20140051243 - Package for semiconductor device including guide rings and manufacturing method of the same: An example embodiment relates to a semiconductor package. The semiconductor package includes a first substrate including a first pad, a second substrate upwardly spaced apart from the first substrate and including a second pad opposite to the first pad. At least one electrode is coupled between the first pad and... Agent: Samsung Electronics Co., Ltd.
20140051244 - Method of forming an integrated circuit device: A method of forming an integrated circuit device includes forming an under-bump metallurgy (UBM) layer overlying a semiconductor substrate. Next, a first photoresist film is formed on the UBM layer where the first photoresist film has a first photosensitivity and a first thickness. Additionally, the method includes forming a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140051245 - Device and method for knife coating an ink based on copper and indium: The device for knife coating a layer of ink based on copper and indium on a substrate includes a supply tank of an ink, said tank collaborating with a coating knife. In addition, the device includes means that allow the ink, the substrate and the coating knife to be kept... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20140051246 - Methods of fabricating a semiconductor device: Methods of fabricating a semiconductor device are provided. The methods may include preparing a semiconductor substrate, forming insulating patterns including a trench on the semiconductor substrate, conformally forming a metal layer covering an inner surface of the trench on the insulating patterns, conformally forming a protecting layer on the metal... Agent: Samsung Electronics Co., Ltd.
20140051247 - Fin structure formation including partial spacer removal: A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the... Agent: International Business Machines Corporation
20140051248 - Inkjet printable etch resist: The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a semiconductor followed by etching uncoated portions of the semiconductor and simultaneously inhibiting undercutting of the resist. The etched portions may then be metallized to form... Agent: Rohm And Haas Electronic Materials LLC
20140051249 - Substrate polishing apparatus: A substrate polishing apparatus includes a retainer for holding a substrate and substrate rotating device that spins the retainer around a first rotational axis perpendicular to a to-be-polished surface of the substrate. A platen includes an abrasive pad disposed opposite of the to-be-polished surface of the substrate. A platen rotating... Agent: Toho Engineering Co., Ltd.
20140051250 - Cmp polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material: A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP... Agent: Hitachi Chemical Company, Ltd.
20140051251 - Methods of forming a pattern on a substrate: A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines... Agent: Micron Technology, Inc.
20140051252 - Device manufacturing and cleaning method: A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140051254 - Movable chamber liner plasma confinement screen combination for plasma processing apparatuses: A movable symmetric chamber liner in a plasma reaction chamber, for protecting the plasma reaction chamber, enhancing the plasma density and uniformity, and reducing process gas consumption, comprising a cylindrical wall, a bottom wall with a plurality of openings, a raised inner rim with an embedded heater, heater contacts, and... Agent: Lam Research Corporation
20140051253 - Plasma baffle ring for a plasma processing apparatus and method of use: A plasma processing apparatus includes a baffle ring which separates an internal space of a vacuum chamber into a plasma space and an exhaust space. Plasma is generated in the plasma space by exciting a process gas using an energy source. The process gas is then exhausted out of the... Agent: Lam Research Corporation
20140051255 - Copper discoloration prevention following bevel etch process: A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the... Agent: Lam Research Corporation
20140051256 - Etch with mixed mode pulsing: A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and... Agent: Lam Research Corporation
20140051257 - Etching apparatus and method: An etchant is supplied to a workpiece. Furthermore, the workpiece is irradiated with spatially modulated light to adjust a temperature profile of said workpiece while etchant is supplied.... Agent: Infineon Technologies Ag
20140051258 - Substrate processing device and substrate processing method for carrying out chemical treatment for substrate: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral... Agent: Dainippon Screen Mfg. Co., Ltd.
20140051259 - Substrate processing device and substrate processing method for carrying out chemical treatment for substrate: It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for... Agent: Dainippon Screen Mfg. Co., Ltd.
20140051260 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas.... Agent: Hitachi Kokusai Electric Inc.
20140051261 - Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus: Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source... Agent: Hitachi Kokusai Electric Inc.
20140051262 - Methods for uv-assisted conformal film deposition: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments,... Agent:
20140051263 - Film forming method: This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on... Agent: Tokyo Electron Limited
20140051264 - Flowable films using alternative silicon precursors: Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate. The methods further include generating at least one excited precursor, such as radical nitrogen or oxygen precursor, with a remote plasma system located outside the... Agent: Applied Materials, Inc.
20140051265 - Apparatus and method for the thermal treatment of substrates: The application describes an apparatus and a method for the thermal treatment of substrates, in particular thin film substrates for photovoltaic applications. The apparatus comprises at least one substrate carrier for supporting a substrate, a heating unit having at least one heating element for heating a substrate located on the... Agent: Centrotherm Photovoltaics Ag02/13/2014 > 70 patent applications in 56 patent subcategories.
20140045278 - Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus: A method of manufacturing a semiconductor device includes: (a) supplying a first process gas from a first process gas supply unit into a process chamber via a flow rate control device to form a film on a substrate; (b) transmitting a signal representing an exhaust pressure detected by a pressure... Agent: Hitachi Kokusai Electric Inc.
20140045279 - Semiconductor component and method for producing a semiconductor component: A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from... Agent:
20140045280 - Method for packaging circuits: A method for packaging integrated circuit chips (die) is described that includes providing a base substrate with package level contacts, coating a base substrate with adhesive, placing dies on the adhesive, electrically connecting the die to the package level contacts, and removing the backside of the base substrate to expose... Agent: Micron Technology, Inc
20140045281 - Substrate processing apparatus and substrate processing method: Provided is a substrate processing apparatus in which flexibility of disposing a device configured to determine a holding state of a substrate and the flexibility of timing of determining the holding state are enhanced. The substrate processing apparatus includes a light projector configured to radiate detection light toward a region... Agent: Tokyo Electron Limited
20140045282 - Using spectra to determine polishing endpoints: Methods of determining a polishing endpoint are described using spectra obtained during a polishing sequence. In particular, techniques for using only desired spectra, faster searching methods and more robust rate determination methods are described.... Agent: Applied Materials, Inc.
20140045283 - Method for manufacturing light-emitting device: To provide a method for manufacturing a lightweight light-emitting device having a light-emitting region on a curved surface. The light-emitting region is provided on a curved surface in such a manner that a light-emitting element is formed on a flexible substrate supported in a plate-like shape and the flexible substrate... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140045286 - Light emitting device package and method of manufacturing the same: Provided is a light emitting device package including: a plurality of lead frames disposed to be separated from one another; at least one light emitting device mounted on the lead frames and electrically connected to the lead frames through a bonding wire provided on a wire bonding pad, the wire... Agent: Samsung Electronics Co., Ltd.
20140045285 - Parallel plate slot emission array: In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and... Agent: Invensas Corporation
20140045284 - Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure: A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≦x≦1,... Agent:
20140045287 - Method for manufacturing display device, method for manufacturing liquid crystal display device, and liquid crystal display device: A method of manufacturing liquid crystal display devices according to the present invention includes: forming a protective film on a first base substrate; forming a circuit element part on the first base substrate and/or the protective film; bonding a second base substrate to the first base substrate to form bonded... Agent: Sharp Kabushiki Kaisha
20140045288 - Method of manufacturing semiconductor light emitting device: A method of manufacturing a semiconductor light emitting device includes preparing a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween, forming a plurality of seeds on at least one surface of the light emitting structure, and forming a plurality of dome-shaped... Agent: Samsung Electronics Co., Ltd.
20140045289 - Method for manufacturing nitride semiconductor layer and method for manufacturing semiconductor light emitting device: According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor layer. The method can include forming a first nitride semiconductor layer on a substrate in a reactor supplied with a first carrier gas and a first source gas. The first nitride semiconductor layer includes indium. The first... Agent: Kabushiki Kaisha Toshiba
20140045290 - Method for manufacturing semiconductor device and method for manufacturing microphone: A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite... Agent: Omron Corporation
20140045291 - Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate: A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a... Agent: Sony Corporation
20140045292 - Method of manufacturing image pickup device: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device... Agent: Canon Kabushiki Kaisha
20140045293 - Fabrication of interconnected thin-film concentrator cells using shadow masks: A method for fabricating thin film solar cells for a concentrated photovoltaic system uses three shadow masks. The first mask, used to deposit a back contact layer, has multiple horizontal and vertical lines defining columns and rows of cells, and multiple tabs each located in a cell along a center... Agent: Pu Ni Tai Yang Neng (hangzhou) Co., Limited
20140045294 - Manufacturing method of semiconductor device: A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and... Agent: Canon Kabushiki Kaisha
20140045295 - Plasma annealing of thin film solar cells: Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor... Agent: International Business Machines Corporation
20140045296 - High voltage opto-electric switch: Improvements for optically activated electric switches are considered. Techniques are presented for reducing the peaking of the electric field at edge of the contacts. For the body of the opto-switch, methods are described to increase the number of traps. Improvements in illumination are also discussed.... Agent: Compact Particle Accleration Corporation
20140045298 - Method for manufacturing organic electronic component having slat compound: A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent... Agent: National Chiao Tung University
20140045297 - Nanoball solution coating method and applications thereof: The present invention discloses a nanoball solution coating method and applications thereof. The method comprises steps: using a scraper to coat a nanoball solution on a substrate to attach a plurality of nanoballs on the substrate; flushing or flowing through the substrate with a heated volatile solution to suspend the... Agent: National Chiao Tung University
20140045299 - Formation method of oxide semiconductor film: An oxide semiconductor film with high crystallinity is formed. An ion is made to collide with a sputtering target including a polycrystalline oxide containing a plurality of crystal grains to separate parts of the plurality of crystal grains and obtain flat plate-like sputtered particles, and the flat plate-like sputtered particles... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140045301 - Through silicon via dies and packages: A method for preparing a die for packaging is disclosed. A die having first and second major surfaces is provided. Vias and a mask layer are formed on the first major surface of the die. The mask includes mask openings that expose the vias. The mask openings are filled with... Agent: United Test And Assembly Center Ltd.
20140045300 - Warpage control in a package-on-package structure: The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20140045302 - Manufacturing method of submount: A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film... Agent: Unistars
20140045303 - Contacts-first self-aligned carbon nanotube transistor with gate-all-around: A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first... Agent: International Business Machines Corporation
20140045304 - Coupling well structure for improving hvmos performance: A semiconductor structure includes a substrate, a first well region of a first conductivity type overlying the substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate, a cushion region between and adjoining the first and the second well regions, an insulation... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140045305 - Display device and method of manufacturing the same: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including... Agent: Samsung Display Co., Ltd.
20140045306 - Method and system for in-situ and regrowth in gallium nitride based devices: A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in... Agent: Avogy, Inc.
20140045308 - Semiconductor storage device and method for manufacturing the same: A semiconductor storage device according to the present invention includes: a semiconductor substrate; an embedded insulator embedded in a trench formed in the semiconductor substrate and having an upper portion protruding above a top surface of the semiconductor substrate; a first insulating film formed on the top surface of the... Agent: Rohm Co., Ltd.
20140045307 - Ultrahigh density vertical nand memory device and method of making thereof: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking... Agent: Sandisk Technologies Inc.
20140045310 - Method of making structure having a gate stack: A method includes removing a first portion of a gate layer of a structure. The structure includes a drain region, a source region, and a gate stack, and the gate stack includes a gate dielectric layer, a gate conductive layer directly on the gate dielectric layer, and the gate layer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140045309 - Vertical conduction power electronic device and corresponding realization method: A vertical conduction power device includes respective gate, source and drain areas in an epitaxial layer on a semiconductor substrate. The respective gate, source and drain metallizations may be provided by a first metallization level. The gate, source and drain terminals may be realized by a second metallization level. The... Agent:
20140045311 - Method for fabricating nonvolatile memory device: A method for fabricating a nonvolatile memory device includes forming a structure having a plurality of first interlayer insulating layers and a plurality of sacrificial layers alternately stacked over a substrate, forming main channel holes configured to penetrate the structure, sequentially forming a preliminary charge trap layer, a tunnel insulating... Agent: Sk Hynix Inc.
20140045312 - Bulk fin-field effect transistors with well defined isolation: A process fabricates a fin field-effect-transistor by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes... Agent: International Business Machines Corporation
20140045313 - High voltage device and manufacturing method thereof: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate in which isolation regions are formed for defining a device region; agate formed on the first conductive type substrate; a source and a drain formed in the... Agent: Richtek Technology Corporation
20140045314 - High voltage device and manufacturing method thereof: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a substrate. The high voltage device includes: a gate, a source and drain, a drift region, and a mitigation region. The gate is formed on an upper surface of the... Agent: Richtek Technology Corporation
20140045315 - Methods for manufacturing a field-effect semiconductor device: A method of fabricating a field-effect transistor is disclosed. In one aspect, the method includes forming a channel layer comprising germanium over a substrate. The method additionally includes forming a gate structure on the channel layer, where the gate structure comprises a gate layer comprising silicon, and the gate layer... Agent: Imec
20140045316 - Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same: An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over... Agent: Nantero Inc.
20140045317 - Methods of forming an array of memory cells, methods of forming a plurality of field effect transistors, methods of forming source/drain regions and isolation trenches, and methods of forming a series of spaced trenches into a substrate: A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately... Agent: Micron Technology, Inc.
20140045318 - Forming a tapered oxide from a thick oxide layer: Processes for forming a tapered field plate dielectric in a semiconductor substrate are provided. The process may be used to form a variety of types of devices, such as Schottky diodes, HVFETs, JFET, IGBT, bipolar transistors, and the like. The process may include etching a trench in a semiconductor wafer,... Agent: Power Integrations, Inc.
20140045319 - Substrate film and method of manufacturing the same: Provided are a substrate film and a method of manufacturing the substrate film. The substrate film may have excellent thermal resistance and dimensional stability, has excellent stress relaxation to prevent damage of a wafer caused by remaining stress, inhibits damage to or flying-off of the wafer caused by application of... Agent: Lg Chem, Ltd.
20140045320 - Semiconductor integrated circuit device and process for manufacturing the same: A method of forming a semiconductor IC includes forming grooves in a substrate to define a first dummy region and second dummy regions formed at a scribing area, and third dummy regions and a fourth dummy region formed at a product area. A width of the first dummy region is... Agent: Renesas Electronics Corporation
20140045321 - Accelerated furnace ramp rates for reduced slip: A method for fabricating an integrated circuit (IC) includes initial oxidizing of a semiconductor surface of a substrate. The substrate is heated after the initial oxidizing using a plurality of furnace processing steps which each include a peak processing temperature between 800° C. and 1300° C. The furnace processing steps... Agent: Texas Instruments Incorporated
20140045322 - Method for manufacturing silicon carbide semiconductor device: A method for manufacturing a silicon carbide semiconductor device includes the step of forming a silicon dioxide film. The step of forming an electrode includes the steps of forming a metal film containing Al and Ti on the silicon carbide substrate, and heating the metal film. The step of heating... Agent: Sumitomo Electric Industries, Ltd.
20140045323 - Synthesis, capping and dispersion of nanocrystals: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange... Agent:
20140045324 - Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor: A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively... Agent: International Business Machines Corporation
20140045325 - Method for fabricating an inter dielectric layer in semiconductor device: In a method for fabricating an inter dielectric layer in semiconductor device, a primary liner HDP oxide layer is formed by supplying a high density plasma (HDP) deposition source to a bit line stack formed on a semiconductor substrate. A high density plasma (HDP) deposition source is supplied to the... Agent: Sk Hynix Inc.
20140045326 - Method of making a semiconductor device having a post-passivation interconnect structure: A method of making a semiconductor device includes forming a passivation layer overlying a semiconductor substrate, the semiconductor substrate having a first region and a second region, wherein the first region is a conductive pad and the second region is adjacent to the first region. The method further includes forming... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140045327 - Double solid metal pad with reduced area: An integrated circuit structure includes a bond pad; an Mtop pad located directly underlying the bond pad; an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein at least one of the Mtop pad and the Mtop-1 pad has a horizontal dimension smaller than a horizontal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140045328 - Interconnection structure for n/p metal gates: A method for fabricating an interconnection structure in a complementary metal-oxide-semiconductor (CMOS) includes forming an opening in a dielectric layer over a substrate and forming a dummy electrode in a first portion of the opening in the dielectric layer. The method further includes filling a second portion of the opening... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140045329 - Method for forming cu wiring: A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill... Agent: Tokyo Electron Limited
20140045330 - Methods of in-situ vapor phase deposition of self-assembled monolayers as copper adhesion promoters and diffusion barriers: Embodiments of the present invention provide methods of in-situ vapor phase deposition of self-assembled monolayers as copper adhesion promoters and diffusion barriers. A copper region is formed in a dielectric layer. A diffusion barrier comprising a self-assembled monolayer is deposited over the copper region. A capping layer is deposited over... Agent: Globalfoundries Inc.
20140045331 - Self-aligned barrier and capping layers for interconnects: An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper.... Agent: President And Fellows Of Harvard College
20140045332 - Through silicon via keep out zone formation method and system: Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140045333 - Double contacts for carbon nanotubes thin film devices: A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and... Agent: International Business Machines Corporation
20140045334 - Methods of providing photolithography patterns using feature parameters, systems and computer program products implementing the same: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of... Agent:
20140045335 - Photo lithographic rinse solution and method of manufacturing a semiconductor device using the same: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and... Agent: Samsung Electronics Co., Ltd.
20140045336 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device having patterns with different widths. The method includes etching a sacrificial pattern using a protective pattern that has a greater width and remains during an etch process of a spacer layer. Since the sacrificial pattern that has a greater width and remains under... Agent: Sk Hynix Inc.
20140045337 - Heating plate with planar heater zones for semiconductor processing: An exemplary method is directed to powering heaters in a substrate support assembly on which a semiconductor substrate is supported. The support assembly has an array of heaters powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected... Agent: Lam Research Corporation
20140045338 - Plasma etching method: There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the... Agent: Tokyo Electron Limited
20140045339 - Substrate treatment apparatus and substrate treatment method: A substrate treatment apparatus is provided which is used for removing a resist from a front surface of a substrate. The apparatus includes a substrate holding unit which holds the substrate, and a sulfuric acid ozone/water mixture supplying unit which supplies a sulfuric acid ozone/water mixture to the front surface... Agent:
20140045340 - Method and apparatus for processing a semiconductor workpiece: A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an... Agent: Spts Technologies Limited
20140045341 - Pattern forming method: According to one embodiment, a pattern forming method includes forming a physical guide, in which at least an upper part of a side wall surface of a concave section is an inclined surface, on a film to be processed, forming a polymer layer containing at least two kinds of segments... Agent: Kabushiki Kaisha Toshiba
20140045342 - Flowable carbon for semiconductor processing: Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a hot filament in hot wire CVD, a plasma in PECVD or UV light) may be applied as described herein to a silicon-free carbon-containing precursor containing a hydrocarbon to form a flowable carbon-containing... Agent:
20140045343 - Thin film deposition apparatus: A thin film deposition apparatus can be simply applied to produce large-sized display devices on a mass scale and improves manufacturing yield. The thin film deposition apparatus for forming a thin film on a substrate includes: a deposition source that discharges a deposition material; a deposition source nozzle unit disposed... Agent: Samsung Display Co., Ltd.
20140045344 - Coater apparatus and coating method: A coater apparatus that coats a substrate with a chemical liquid includes a chemical liquid nozzle, a solvent nozzle, a solvent bath, a dummy dispense port, and an ionizer. The chemical liquid nozzle dispenses the chemical liquid onto the substrate. The solvent nozzle dispenses a solvent onto the substrate. The... Agent: Kabushiki Kaisha Toshiba
20140045345 - Semiconductor device and manufacturing method of the same: A protective insulation film covering a surface of a compound semiconductor region is formed to have a two-layer structure of a first insulation film and a second insulation film which have different properties. The first insulation film is a non-stoichiometric silicon nitride film while the second insulation film is a... Agent: Fujitsu Limited
20140045346 - Systems and methods for preparation of epitaxially textured thick films: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the... Agent: The Trustees Of Columbia University In The City Of New York
20140045347 - Systems and methods for processing a film, and thin films: In some embodiments, a method of processing a film is provided, the method comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed on a substrate and capable of laser-induced melting; generating a laser beam having a fluence that is selected to form... Agent: The Trustees Of Columbia University In The City Of New York02/06/2014 > 123 patent applications in 84 patent subcategories.
20140038312 - Fabrication of a magnetic tunnel junction device: A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, a non-transitory computer-readable medium includes processor executable instructions. The instructions, when executed by a processor, cause the processor to initiate deposition of a capping material on a free layer of a magnetic tunneling junction structure to... Agent: Qualcomm Incorporated
20140038314 - Magnetic random access memory (mram) with enhanced magnetic stiffness and method of making same: A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM... Agent: Avalanche Technology, Inc.
20140038310 - Magnetic random access memory with synthetic antiferromagnetic storage layers: A synthetic antiferromagnetic device includes a reference layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer, and a first ruthenium layer disposed on cobalt iron boron layer, the first ruthenium layer having a thickness of approximately... Agent: International Business Machines Corporation
20140038309 - Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers: A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer,... Agent: International Business Machines Corporation
20140038311 - Methods for etching materials used in mram applications: Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first... Agent:
20140038313 - Semiconductor fabricating device and method for driving the same, and method for fabricating magnetic tunnel junction using the same: In a method for fabricating a magnetic tunnel junction, a first magnetic layer is formed on a substrate, and a tunnel insulating layer is formed on the first magnetic layer. Subsequently, a second magnetic layer is formed on the tunnel insulating layer. In the method, the first magnetic layer is... Agent: Sk Hynix Inc.
20140038315 - Apparatus and method for measuring the dimensions of 1-dimensional and 0-dimensional nanostructures in real-time during epitaxial growth: The present invention relates to an apparatus and a method for measuring the dimensions of 1-dimensional and 0-dimensional nanostructures on semiconductor substrates in real-time during epitaxial growth. The method includes either assigning a pre-calculated 3D-model from a data base to the sample or calculating a 3D-model of the sample using... Agent:
20140038316 - Examination of a silicon substrate for a solar cell: The invention relates to a method for examining a wire-sawn silicon substrate for a solar cell. The method includes irradiating the silicon substrate with an infrared radiation, detecting the infrared radiation transmitted through the silicon substrate, and analyzing the detected infrared radiation for characterizing the crystal orientation of the silicon... Agent:
20140038317 - Method for forming an electrical connection between metal layers: A method forms an electrical connection between a first metal layer and a second metal layer. The second metal layer is above the first metal layer. A first via is formed between the first metal layer and the second metal layer. A first measure of a number of vacancies expected... Agent:
20140038318 - Pattern forming methods and semiconductor device manufacturing method: According to one embodiment, a pattern forming method includes forming a self-assembled material on a plurality of first patterns, forming a plurality of second patterns by heating the self-assembled material and causing microphase separation of the self-assembled material, the second patterns corresponding to the first patterns, and calculating positional deviations... Agent: Kabushiki Kaisha Toshiba
20140038319 - Method for forming an electrical connection between metal layers: A method includes forming a connection between a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A via location for a first via between the first metal layer and the second metal layer is identified. Additional locations for first additional... Agent:
20140038320 - Method of manufacturing a light emitting diode: A method (100) of making a semiconductor device, for example a light emitting diode. The method (100) includes providing (105) a semi-conductor wafer, and providing (110) a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective... Agent: Seren Photonics Limited
20140038321 - Photoconductive switch package: A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central... Agent:
20140038322 - Electronic device and method of manufacturing an electronic device: An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140038323 - Method for manufacturing light emitting chip: A method for making a light emitting chip package, comprises: providing a substrate; forming a plurality of recesses on the bottom surface of the substrate; forming an etch stop layer on the bottom surface; forming a step hole on the top surface; forming an insulation layer on the top surface;... Agent: Hon Hai Precision Industry Co., Ltd.
20140038324 - Manufacturing method of light emitting apparatus: In a manufacturing method of a light emitting apparatus, an array of light emitting elements is formed on a substrate. A first lens-pillar-material layer is formed on the array, and first lens pillars are formed on the light emitting elements of the array by performing a photolithographic process on the... Agent: Oki Data Corporation
20140038326 - Display substrate having arched signal transmission line and manufacture method thereof: This invention discloses a display device mother substrate, a display device substrate and a manufacture method of display device substrate thereof. The display device mother substrate includes a first substrate, a second substrate, a first active area circuit and a first transmission line, wherein a first cutting line is defined... Agent: Au Optronics Corporation
20140038327 - Frit sealing system and method of manufacturing organic light-emitting display (oled) apparatus using the same: A frit sealing system and a method of manufacturing an organic light-emitting display (OLED) using the frit sealing system are disclosed. In one embodiment, the frit sealing system includes: a thermal expansion film formed on the second substrate to pressurize the second substrate when heat is applied to the frit... Agent: Samsung Display Co., Ltd.
20140038325 - Light-emitting device manufacturing method: A method for manufacturing a light-emitting device comprises retaining a conductor wire so that a straight-line distance between adjacent mounting portions while the conductor is retained is less than a distance along the conductor wire between the adjacent mounting portions; mounting a plurality of light emitting diodes to respective ones... Agent: Nichia Corporation
20140038328 - Method for manufacturing semiconductor light emitting device: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first... Agent: Nichia Corporation
20140038329 - Epitaxial growth on thin lamina: Methods and apparatus are provided for forming an electronic device from a lamina and an epitaxially grown semiconductor material. The method includes providing a donor body comprising a top surface, epitaxially growing a semiconductor material on the top surface and implanting the top surface of the donor body with an... Agent: Gtat Corporation
20140038332 - Back panel for flat panel display apparatus, flat panel display apparatus comprising the same, and method of manufacturing the back panel: A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third... Agent: Samsung Display Co., Ltd.
20140038330 - Device for forming thin layer and method of manufacturing organic light emitting diode display using the same: Provided are a device for forming a thin layer that may be applied to mass production and a method of manufacturing a display using the same. The device for forming a thin layer includes a vessel that has a material for forming a thin layer, a multi-nozzle part that is... Agent:
20140038331 - Solid state lighting device with different illumination parameters at different regions of an emitter array: Solid state lighting (SSL) devices and methods of manufacturing such devices. One embodiment of an SSL device comprises a support and an emitter array having a plurality of SSL emitters carried by the support. The emitter array has a central region and a peripheral region outward from the central region.... Agent: Micron Technology, Inc.
20140038333 - Display device and method for manufacturing the same: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the... Agent: Samsung Display Co., Ltd.
20140038334 - Laser-induced flaw formation in nitride semiconductors: An embodiment is a method to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in... Agent: Palo Alto Research Center Incorporated
20140038335 - Integrated acoustic transducer in mems technology, and manufacturing process thereof: A MEMS acoustic transducer, for example, a microphone, includes a substrate provided with a cavity, a supporting structure, fixed to the substrate, a membrane having a perimetral edge and a centroid, suspended above the cavity and fixed to the substrate the membrane configured to oscillate via the supporting structure. The... Agent: Stmicroelectronics S.r.l.
20140038336 - Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method: A thermal detector manufacturing method includes: forming a sacrificial layer on a structure including an insulating layer; forming a support member on the sacrificial layer; forming on the support member a heat-detecting element; forming a first light-absorbing layer so as to cover the heat-detecting element, and planarizing the first light-absorbing... Agent: Seiko Epson Corporation
20140038337 - Backside illuminated image sensor and manufacturing method thereof: Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the... Agent: Intellectual Ventures Ii LLC
20140038338 - Front contact solar cell with formed emitter: A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front... Agent:
20140038339 - Process of manufacturing crystalline silicon solar cell: A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al2O3 film is coated on a non-rough surface thereof. A single-sided n diffusion layer and phosphosilicate glass film are formed. An anti-reflection layer SiNx film is... Agent: Atomic Energy Council-institute Of Nuclear Energy Research
20140038342 - Back-illuminated type solid-state imaging device: A method for manufacturing a back-illuminated type solid-state imaging device by (a) providing a substrate having, on a front surface side thereof, a semiconductor film on a semiconductor substrate with an insulation film therebetween; (b) forming in the semiconductor substrate a charge accumulation portion of a photoelectric conversion element that... Agent: Sony Corporation
20140038340 - Method for manufacturing solar cell module provided with an edge space: The solar cell module having a preferable edge space that prevents characteristics of a solar cell such as conversion efficiency from being deteriorated without making processes complicated is provided. In a method for manufacturing a solar cell module including a substrate glass, a first layer formed on the substrate glass... Agent: Showa Shell Sekiyu K.k.
20140038341 - Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the... Agent: Sony Corporation
20140038343 - Method for manufacturing solar cell module provided with an edge space: The solar cell module having a preferable edge space that prevents characteristics of a solar cell such as conversion efficiency from being deteriorated without making processes complicated is provided. In a method for manufacturing a solar cell module including a substrate glass, a first layer formed on the substrate glass... Agent: Showa Shell Sekiyu K.k.
20140038344 - Thin film solar cells: Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS2) between the layer of CZTS and the first layer of... Agent: International Business Machines Corporation
20140038345 - Method of chalcogenization to form high quality cigs for solar cell applications: A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 300 C and about 400 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. A partial selenization is performed at a... Agent:
20140038347 - Manufacturing method of electrode of solar cell: A manufacturing method of an electrode of a solar cell is provided. The manufacturing method of the electrode of the solar cell includes following steps. A laser doping process is performed to form a selective emitter on a substrate. A laser marking process is performed to form alignment markers on... Agent: Topcell Solar International Co., Ltd.
20140038346 - Thick-film paste containing lead-vanadium-based oxide and its use in the manufacture of semiconductor devices: The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers and a method for doing so. The thick-film paste comprises a source of an electrically conductive metal and a lead-vanadium-based oxide dispersed in an organic medium. The... Agent: E I Du Pont De Nemours And Company
20140038349 - Doner substrates and methods of manufacturing organic light emitting display devices using donor substrates: A donor substrate may include a base layer, a light to heat conversion layer disposed on the base layer, a buffer layer disposed on the light to heat conversion layer, an organic transfer layer disposed on the buffer layer, and a tightening member disposed on a peripheral portion of the... Agent:
20140038348 - Etchant composition and manufacturing method for thin film transistor using the same: An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.... Agent: Samsung Display Co., Ltd.
20140038350 - N-dopant for carbon nanotubes and graphene:
20140038351 - Method for manufacturing semiconductor device: In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140038352 - Non-volatile resistive-switching memories: Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set... Agent: Intermolecular Inc.
20140038353 - Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same: A method of manufacturing a semiconductor package includes preparing a parent substrate including package board parts laterally spaced apart from each other, mounting a first chip including a through-via electrode on each of the package board parts, forming a first mold layer on the parent substrate having the first chips,... Agent: Samsung Electronics Co., Ltd.
20140038355 - Flip-chip assembly process for connecting two components to each other: The invention relates to a flip-chip assembly process for connecting two microelectronic components (1, 2) to each other. According to the invention, it is possible either to proportion the spacers (24) so that they are smaller than the interconnect bumps (22) or to oversize the latter so that their deformation,... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20140038354 - Semiconductor package and method of fabricating the same: Disclosed are semiconductor packages and methods of fabricating the same. A method may include preparing a wiring board including a mounting region and a molding region surrounding the mounting region; forming a through-hole penetrating through the wiring board at the mounting region; mounting a semiconductor chip on the mounting region... Agent: Samsung Electronics Co., Ltd.
20140038360 - Apparatus and methods for molding die on wafer interposers: Methods and apparatus for performing molding on die on wafer interposers. A method includes receiving an interposer assembly having a die side and an opposite side including two or more integrated circuit dies mounted on the die side of the interposer, the interposer assembly having spaces formed on the die... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140038359 - Laser-assisted cleaving of a reconstituted wafer for stacked die assemblies: A method of forming stacked die devices includes attaching first semiconductor die onto a wafer to form a reconstituted wafer, and then bonding second semiconductor die onto the first semiconductor die to form a plurality of singulated stacked die devices on the wafer. A support tape is attached to a... Agent: Texas Instruments Incorporated
20140038358 - Method for contacting agglomerate terminals of semiconductor packages: In fabricating a semiconductor device first layers are formed of sintered bondable and solderable metal on a carrier strip. The first layers are patterned into first pads and second pads. A set of first pads is surrounding each second pad. The first pads are spaced from the second pad by... Agent: Texas Instruments Incorporated
20140038356 - Method for plating a semiconductor package lead: A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of... Agent:
20140038357 - Singulated ic stiffener and de-bond process: A method and apparatus is described for forming and using a stiffener for the production of thinned integrated circuits. In one embodiment, a handle can be bonded to an integrated circuit wafer before the wafer is thinned. Electrical couplings such as mounting balls can be attached to the wafer. Individual... Agent: Apple Inc.
20140038362 - Self orienting micro plates of thermally conducting material as component in thermal paste or adhesive: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.... Agent: International Business Machines Corporation
20140038361 - Semiconductor device and method of manufacturing the same: As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining... Agent: Renesas Electronics Corporation
20140038363 - Tsop with impedance control: A semiconductor device of an illustrative embodiment includes a die, a lead frame including a plurality of leads having substantial portions arranged in a lead plane and electrically connected to the die. Most preferably, the package includes at least a substantial portion of one conductive element arranged in a plane... Agent: Tessera, Inc.
20140038364 - Method of encapsulating a microelectronic device: s
20140038365 - Graphene-based efuse device: A method of forming a semiconductor device includes forming a field-effect transistor (FET), and forming a fuse which includes a graphene layer and is electrically connected to the FET.... Agent: International Business Machines Corporation
20140038367 - Method and structure for integrating capacitor-less memory cell with logic: Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device... Agent: Micron Technology, Inc.
20140038366 - Method for manufacturing flexible semiconductor device having gate electrode disposed within an opening of a resin film: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein,... Agent: Panasonic Corporation
20140038368 - Embedded silicon germanium n-type filed effect transistor for reduced floating body effect: A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in... Agent: International Business Machines Corporation
20140038369 - Method of forming fin-field effect transistor (finfet) structure: Various embodiments include methods of forming semiconductor structures. In one embodiment, a method includes: providing a precursor structure including a substrate and a set of fins overlying the substrate; forming a dummy epitaxy between the fins in the set of fins; masking a first group of fins in the set... Agent: International Business Machines Corporation
20140038371 - Thin film transistor liquid crystal display array substrate and manufacturing method thereof: A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method steps are: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on... Agent: Beijing Boe Optoelectronics Technology Co., Ltd
20140038370 - Thin film transistor substrate and method for manufacturing the same: A thin film transistor substrate and a method for manufacturing the same are discussed, in which the thin film transistor comprises a gate line and a data line arranged on a substrate to cross each other; a gate electrode connected with the gate line below the gate line; an active... Agent: Lg Display Co., Ltd.
20140038372 - Compound semiconductor device and method of manufacturing the same: Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The protection films are formed, for example, of SiN film, as insulating films. The protection film is formed... Agent: Fujitsu Limited
20140038373 - Semiconductor device and manufacturing method thereof: It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140038374 - Method for manufacturing cmos transistor: A CMOS transistor and a method for manufacturing the same are disclosed. A semiconductor substrate having at least a PMOS transistor and an NMOS transistor is provided. The source/drain of the PMOS transistor comprises SiGe epitaxial layer. A carbon implantation process is performed to form a carbon-doped layer in the... Agent: United Microelectronics Corp.
20140038375 - Semiconductor device having vertical mos transistor and method for manufacturing the semiconductor device: A method for manufacturing a semiconductor device including a vertical MOS transistor, includes forming a trench for shallow trench isolation in a semiconductor substrate, and burying an element isolation insulating film in the trench, forming an insulating film to be a mask for forming a semiconductor pillar, in a region... Agent: Elpida Memory, Inc.
20140038376 - Method and apparatus of forming esd protection device: The present disclosure provides a semiconductor device having a transistor. The transistor includes a source region, a drain region, and a channel region that are formed in a semiconductor substrate. The channel region is disposed between the source and drain regions. The transistor includes a first gate that is disposed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140038377 - Compound semiconductor device and manufacturing method thereof: A first AlGaN layer formed over a substrate, a second AlGaN layer formed over the first AlGaN layer, an electron transit layer formed over the second AlGaN layer, and an electron supply layer formed over the electron transit layer are provided. A relationship of “0≦x1<x2≦1” is found when a composition... Agent: Fujitsu Limited
20140038378 - Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant: A metal oxide semiconductor field effect transistor (MOSFET) with source side punch-through protection implant. Specifically, the MOSFET comprises a semiconductor substrate, a gate stack formed above the semiconductor substrate, source and drain regions, and a protection implant. The semiconductor substrate comprises a first p-type doping concentration. The source and drain... Agent: Spansion LLC
20140038379 - Dual resistance heater for phase change devices and manufacturing method thereof: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result,... Agent: Micron Technology, Inc.
20140038380 - Multifunctional electrode: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has... Agent: Intermolecular Inc.
20140038381 - Thermally controlled refractory metal resistor: A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of... Agent: International Business Machines Corporation
20140038382 - Structure and method to realize conformal doping in deep trench applications: The specification and drawings present a new method, ASIC and computer/software related product (e.g., a computer readable memory) are presented for realizing conformal doping in embedded deep trench applications in the ASIC. A common SOI substrate with intrinsic or low dopant concentration is used for manufacturing such ASICs comprising a... Agent: International Business Machines Corporation
20140038383 - Method of fabricating semiconductor device using photo key: A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the... Agent: Samsung Electronics Co., Ltd.
20140038384 - Forming metal-insulator-metal capacitors over a top metal layer: A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140038385 - Nonvolatile memory devices and methods of fabricating the same: Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film... Agent:
20140038386 - Reducing or eliminating pre-amorphization in transistor manufacture: A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped... Agent: Suvolta, Inc.
20140038387 - Method for manufacturing a semiconductor device: A semiconductor device may include, but is not limited to, a semiconductor substrate having a device isolation groove defining first to fourth device formation portions. The second device formation portion is separated from the first device formation portion. The third device formation portion extends from the first device formation portion.... Agent: Elpida Memory, Inc.
20140038388 - Method for manufacturing a semiconductor-on-insulator structure having low electrical losses, and corresponding structure: A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable... Agent: Soitec
20140038389 - Processing method of semiconductor substrate and processed semiconductor substrate product: Provided is a processing method of a semiconductor substrate, including curing an adhesive layer by radiating UV rays at least on portions of a protective film that come into contact with semiconductor device main body parts before the protective film on which a UV curable adhesive layer is formed is... Agent: Sony Corporation
20140038391 - Iii-nitride wafer fabrication: A method for fabrication of a III-nitride film over a silicon wafer that includes forming control joints to allow for overall stress relief in the III-nitride film during the growth thereof.... Agent: International Rectifier Corporation
20140038390 - Through silicon via guard ring: The present disclosure relates to forming a plurality of through silicon vias guard rings proximate the scribes streets of a microelectronic device wafer. The microelectronic device wafer includes a substrate wherein the through silicon via guard ring is fabricated by forming vias extending completely through the substrate. The through silicon... Agent:
20140038392 - Systems and methods for laser splitting and device layer transfer: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.... Agent:
20140038394 - Method and apparatus of forming compound semiconductor film: A method for forming a compound semiconductor film on a substrate to be processed, which includes: mounting a plurality of substrates to be processed on a substrate mounting jig; loading the substrates to be processed into a processing chamber; and heating the substrates to be processed loaded into the processing... Agent: Tokyo Electron Limited
20140038393 - Method and system for ion-assisted processing: A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between... Agent: Varian Semiconductor Equipment Associates, Inc.
20140038395 - Vapor deposition device and vapor deposition method: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the... Agent: Toyota Jidosha Kabushiki Kaisha
20140038396 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second... Agent: Kabushiki Kaisha Toshiba
20140038397 - Manufacturing method of silicon carbide semiconductor device: A silicon oxide film is formed on an epitaxial layer by dry thermal oxidation, an ohmic electrode is formed on a back surface of a SiC substrate, an ohmic junction is formed between the ohmic electrode and the back surface of the SiC substrate by annealing the SiC substrate, the... Agent: Mitsubishi Electric Corporation
20140038399 - Method for fabricating an aperture: A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask. Before... Agent: United Microelectronics Corp.
20140038398 - Substrate treating methods and apparatuses employing the same: In a method of treating a substrate according to the inventive concept, the substrate is treated using a buffer solution including carbon dioxide (CO2) water in combination with an alkaline solution.... Agent: Samsung Electronics Co., Ltd.
20140038400 - 3d semiconductor devices and methods of fabricating same: A three dimensional (3D) semiconductor device includes; a vertical channel extending from a lower end proximate a substrate to an upper end and connecting a plurality of memory cells, and a cell array comprising the plurality of cells, wherein the cell array is arranged in a gate stack of layers... Agent:
20140038401 - Ruthenium for a dielectric containing a lanthanide: A gate containing ruthenium for a dielectric having an oxide containing a lanthanide and a method of fabricating such a combination gate and dielectric produce a reliable structure for use in a variety of electronic devices. A ruthenium or a conductive ruthenium oxide gate may be formed on a lanthanide... Agent: Micron Technology, Inc.
20140038402 - Dual work function finfet structures and methods for fabricating the same: A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from... Agent: Globalfoundries Inc.
20140038403 - High-k transistors with low threshold voltage: An apparatus includes a wafer annealing tool and a plurality of electrodes coupled to the wafer annealing tool, wherein the electrodes are configured to be in physical contact with a wafer so that, when the wafer is annealed, a negative electrical bias is formed across one or more gate stacks... Agent: International Business Machines Corporation
20140038404 - Flash memory utilizing a high-k metal gate: According to one exemplary embodiment, a method for fabricating a flash memory cell in a semiconductor die includes forming a control gate stack overlying a floating gate stack in a memory region of a substrate, where the floating gate stack includes a floating gate overlying a portion of a dielectric... Agent: Broadcom Corporation
20140038406 - Method for fabricating a through wire interconnect (twi) on a semiconductor substrate having a bonded connection and an encapsulating polymer layer: A method for fabricating a through wire interconnect for a semiconductor substrate having a substrate contact includes the steps of: forming a via through the semiconductor substrate from a first side to a second side thereof; placing a wire in the via having a first end with a bonded connection... Agent: Micron Technology, Inc.
20140038405 - Packaging structures and methods with a metal pillar: A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140038407 - Fluorine depleted adhesion layer for metal interconnect structure: A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or... Agent: International Business Machines Corporation
20140038408 - Fluorine depleted adhesion layer for metal interconnect structure: A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or... Agent: International Business Machines Corporation
20140038409 - Semiconductor device and a method of manufacturing the same: For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching... Agent: Renesas Electronics Corporation
20140038410 - Method of producing a semiconductor device having an interconnect through the substrate: A semiconductor substrate (1) is provided on a main surface (14) with an intermetal dielectric (4) including metal planes (5) and on an opposite rear surface (15) with an insulation layer (2) and an electrically conductive connection pad (7). An etch stop layer (6) is applied on the intermetal dielectric... Agent: Ams Ag
20140038411 - Manufacturing method of device: A device manufacturing method includes: sequentially forming a first sacrificial film, a first support film, a second sacrificial film, and a second support film on a semiconductor substrate; forming a hole to pass through these films; forming a crown-shaped electrode covering an inner surface of the hole and connected to... Agent: Elpida Memory, Inc.
20140038412 - Interconnect formation using a sidewall mask layer: Embodiments described herein provide approaches for interconnect formation in a semiconductor device using a sidewall mask layer. Specifically, a sidewall mask layer is deposited on a hard mask in a merged via region of the semiconductor device following removal of a planarization layer previously formed on the hard mask. The... Agent: Globalfoundries Inc.
20140038413 - Method of manufacturing a semiconductor device including a dielectric structure: A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant... Agent: Infineon Technologies Austria Ag
20140038414 - Process of planarizing a wafer with a large step height and/or surface area features: A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the raised region. A second chemical mechanical polishing process is performed to planarize the wafer using the... Agent: Nanya Technology Corp.
20140038415 - Polymer-containing developer: Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent.... Agent: Nissan Chemical Industries, Ltd.
20140038416 - Single spacer process for multiplying pitch by a factor greater than two and related intermediate ic structures: Single spacer processes for multiplying pitch by a factor greater than two are provided. In one embodiment, n, where n≧2, tiers of stacked mandrels are formed over a substrate, each of the n tiers comprising a plurality of mandrels substantially parallel to one another. Mandrels at tier n are over... Agent: Micron Technology, Inc.
20140038417 - Semiconductor structure and process thereof: A semiconductor structure includes a substrate, a recess and a material. The recess is located in the substrate, wherein the recess has an upper part and a lower part. The minimum width of the upper part is larger than the maximum width of the lower part. The material is located... Agent: United Microelectronics Corp.
20140038418 - Bevel etcher with vacuum chuck: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body... Agent: Lam Research Corporation
20140038419 - Method for providing vias: A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes... Agent: Lam Research Corporation
20140038420 - Composition and process for selectively etching metal nitrides: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably... Agent: Advanced Technology Materials, Inc.
20140038423 - Coating treatment method and coating treatment apparatus: In the present invention, a masking solution is supplied to an edge portion of a front surface of a substrate rotated around a vertical axis to form a masking film at the edge portion of the substrate, a hard mask solution is supplied to the front surface of the substrate... Agent: Tokyo Electron Limited
20140038422 - Control system for non-contact edge coating apparatus for solar cell substrates: A non-contact edge coating apparatus includes an applicator for applying a coating material on an edge of a solar cell substrate and a control system configured to drive the applicator. The control system may drive the applicator along an axis to maintain a distance with an edge of the substrate... Agent: Sunpower Corporation
20140038421 - Deposition chamber and injector: A system and method are disclosed for processing semiconductors. An embodiment comprises a reaction chamber for processing wafers and having walls tapering at an angle that is greater than 0 degrees and less than about 35 degrees from a first end optionally having a diameter of 341 to 380 millimeters... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140038424 - Method of manufacturing semiconductor device: A polyimide film is effectively formed on a complicated surface. The polyimide film is formed by reacting, on the surface, diamine monomer and tetracarboxylic acid dianhydride monomer both of which are dissolved within carbon dioxide in a supercritical states, together with a polyamic acid resulting from a reaction between the... Agent: Elpida Memory, Inc.
20140038425 - Methods of eliminating pattern collapse on photoresist patterns: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing... Agent: Micron Technology, Inc.
20140038426 - Method for manufacturing semiconductor devices: A method for reducing defects in an active device area of a semiconductor device during fabrication is disclosed. In one aspect, the method comprises providing the active device area adjacent an isolation structure, wherein a substantially planar surface is formed over the isolation structure and the active device area, forming... Agent: Imec
20140038427 - Carbosilane precursors for low temperature film deposition: Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at... Agent:
20140038428 - Self-assembled monolayer for pattern formation: The present disclosure is directed to a process for the fabrication of a semiconductor device. In some embodiments the semiconductor device comprises a patterned surface. The pattern can be formed from a self-assembled monolayer. The disclosed process provides self-assembled monolayers which can be deposited quickly, thereby increasing production throughput and... Agent: Taiwan Semiconductor Manufacturing Co. Ltd.
20140038429 - Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus: In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying... Agent: Hitachi Kokusai Electric Inc.
20140038431 - Apparatus and methods for microwave processing of semiconductor substrates: Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an... Agent: Applied Materials, Inc.
20140038430 - Method for processing object: In a method for processing an object by heating the object, microwaves are irradiated to the object. In the microwave irradiation, the object is forcedly cooled.... Agent: Tokyo Electron LimitedPrevious industry: Chemistry: analytical and immunological testing
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