|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 10/02/2014 > 99 patent applications in 73 patent subcategories.
20140295580 - Method for manufacturing semiconductor device and manufacturing apparatus: A method for manufacturing a semiconductor device includes accommodating in a processing chamber a semiconductor structural body having a semiconductor substrate and a laminated structure formed on the semiconductor substrate and having multiple metal films including a noble-metal film, and generating a bias voltage on the semiconductor substrate while generating... Agent: Tokyo Electron Limited
20140295579 - Method of patterning mtj stack: This invention comprises methods to form isolated magnetic tunneling junction (MTJ) memory element with small footprint using oxygen-ion implantation. After patterned resist is form on an MTJ film, the substrate is subject to a series of ion implantations outside the mask areas to subsequently implant Mg and oxygen ions into... Agent: T3memory, Inc.
20140295581 - Method and apparatus to fabricate vias in the gan layer of gan mmics: The method and apparatus to fabricate vias in the gallium nitride (“GaN”) layer of a GaN monolithic microwave integrated circuit (“MMIC”). The method and apparatus create vias in the GaN layer of a GaN MMIC through the use of controlled laser ablation and spectroscopic analysis of SiC and CVD diamond... Agent:
20140295582 - Controlling the device performance by forming a stressed backside dielectric layer: A device includes a p-type metal-oxide-semiconductor (PMOS) device and an n-type metal-oxide-semiconductor (NMOS) device at a front surface of a semiconductor substrate. A first dielectric layer is disposed on a backside of the semiconductor substrate. The first dielectric layer applies a first stress of a first stress type to the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140295583 - Plasma processing apparatus and plasma processing method: In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of... Agent: Hitachi High-technologies Corporation
20140295584 - Low energy collimated ion milling of semiconductor structures: A method of delayering a surface of a semiconductor structure may include applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency. A collimated ion beam incident on the surface of the semiconductor... Agent: International Business Machines Corporation
20140295585 - Tailorable flexible sheet of monolithically fabricated array of separable cells each comprising a wholly organic, integrated circuit adapted to perform a specific function: A flexible sheet of organic polymer material, may include a monolithically fabricated array of one or more types of cells juxtaposed among them to form a multi-cell sheet. Each cell may include a self consistent, organic base integrated circuit, replicated in each cell of same type of the array, and... Agent:
20140295587 - Donor substrate and method of forming transfer pattern using the same: A donor substrate includes a base substrate; a light reflection layer disposed on the base substrate and overlapped with a portion of the base substrate, a heat blocking pattern disposed on the light reflection layer, overlapped with the light reflection layer, and including a plurality of air holes; a light-to-heat... Agent: Samsung Display Co., Ltd.
20140295586 - Manufacturing method for flexible display device: A method of manufacturing a flexible display device, the method including depositing a separation layer on a supporting substrate; depositing a display panel on the separation layer; cutting the display panel to have a predetermined shape; cutting the supporting substrate and the separation layer to have a wider area than... Agent:
20140295588 - Method of forming light-emitting diode: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the... Agent: Epistar Corporation
20140295589 - Optoelectronic component and method for producing an optoelectronic component: An optoelectronic component includes a semiconductor layer sequence having an optoelectronically active region; a dielectric layer on the semiconductor layer sequence; and a metal layer on the dielectric layer, wherein an adhesion layer is arranged between the dielectric layer and the metal layer, the adhesion layer being covalently bonded to... Agent: Osram Opto Semiconductors Gmbh
20140295592 - Bat-wing lens design with multi-di: A batwing beam is produced from an optical emitter having a primary LED lens over a number of LED dies on a package substrate. The LED lens includes a batwing surface formed by rotating a parabolic arc about an end of the parabolic arc over a center of the optical... Agent:
20140295593 - Method and apparatus for fabricating phosphor-coated led dies: The present disclosure involves a method. The method includes providing a substrate having a layer disposed thereon. A plurality of light-emitting devices is attached to the layer. A gel is applied over the substrate. The gel covers the plurality of light-emitting devices. The gel is shaped into a plurality of... Agent:
20140295590 - Method of fabricating lightweight and thin liquid crystal display device: Disclosed is a method for fabricating a lightweight and thin liquid crystal display (LCD) device, using a supplementary substrate for processing of a thin glass substrate. Inactive gas is sprayed onto the surface of the substrate to thus remove OH groups from the surface, before the thin glass substrate and... Agent: Lg Display Co., Ltd.
20140295591 - Method of manufacturing light-emitting device: A method of manufacturing a light-emitting device includes providing a case including an annular sidewall and an LED chip including a chip substrate and a crystal layer and mounted in a region surrounded by the sidewall of the case, and dripping a droplet of an electrically-charged phosphor-containing resin so as... Agent: Toyoda Gosei Co., Ltd.
20140295594 - Discontinuous patterned bonds for semiconductor devices and associated systems and methods: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of... Agent:
20140295597 - Fabrication method for organic el device: The fabrication method for an organic EL device according to the invention includes: forming a third insulating layer on a first insulating layer; removing the third insulating layer in a first pixel region by etching the third insulating layer; forming a second insulating layer that has different thicknesses in a... Agent: Seiko Epson Corporation
20140295596 - Method for improving the reflectivity of aluminum in oled structure: The present disclosure discloses a method for improving the reflectivity of aluminum in OLED structure. The OLED structure includes a top ITO layer, a middle reflective layer made by aluminum and a bottom ITO layer. The method comprises; forming a bottom ITO layer; coating the aluminous reflective layer on the... Agent: Everdisplay Optronics (shanghai) Limited
20140295595 - Optical device structure using gan substrates for laser applications: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar... Agent: Soraa Laser Diode, Inc.
20140295599 - Etchant, display device and method for manufacturing display device using the same: An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least... Agent:
20140295598 - Semiconductor light emitting element fabrication method: A method of fabricating a plurality of light emitting elements includes forming a nitride semiconductor layer on a growth substrate, the nitride semiconductor layer including at least an n-type nitride semiconductor layer, an active layer made of a nitride semiconductor, and a p-type nitride semiconductor layer stacked in this order;... Agent:
20140295600 - Evaporation source assembly, film deposition device and film deposition method: An evaporation source assembly used for depositing film on a substrate is provided, the evaporation source assembly comprises: a body comprising a top element, a bottom element and side walls defining a hollow chamber together, the bottom element comprises a plurality of inlet openings communicating with the chamber; a plurality... Agent: Everdisplay Optronics (shanghai) Limited
20140295603 - Method for producing organic electroluminescence element: A method is provided for producing an organic EL element having excellent electric properties in a relatively low cost. The method includes the steps of using a vapor deposition apparatus 7 including a first vapor deposition source 721 including a first organic layer forming material and a second vapor deposition... Agent: Nitto Denko Corporation
20140295601 - Method of forming organic light emitting pattern and apparatus for forming organic light emitting pattern of organic electro-luminescence display using sublimation type thermal transfer method: A method of forming an organic light emitting pattern of an organic electro-luminescence display according to an exemplary embodiment of the present invention includes preparing a display substrate in which a region where a first organic light emitting material is to be formed is defined, preparing a temporal transfer substrate... Agent:
20140295602 - Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer: According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The... Agent: Kabushiki Kaisha Toshiba
20140295604 - P-type transition metal oxide-based films serving as hole transport layers in organic optoelectronic devices: An improvement in a method of making a semiconducting device having a hole-collecting electrode includes coating the hole-collecting electrode with a p-type transition metal oxide through a sol-gel process.... Agent: The University Of Akron
20140295605 - Method of fabricating a capacitive environment sensor: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using... Agent: Carnegie Mellon University
20140295606 - Method for producing a device comprising cavities formed between a suspended element resting on insulating pads semi-buried in a substrate and this substrate: A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt
20140295607 - Method of forming contacts for a back-contact solar cell: Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a... Agent:
20140295608 - Method of forming emitters for a back-contact solar cell: Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate... Agent:
20140295609 - Solar cell emitter region fabrication using silicon nano-particles: Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate... Agent:
20140295611 - Method and device for industrially producing photovoltaic concentrator modules: The invention relates to a device for industrially producing photovoltaic concentrator modules which consist of a module frame, a lens pane comprising a plurality of Fresnel lenses, a sensor-carrier pane, and an electric line guide, said device comprising the following features: a) a carriage (30) for retaining a module frame... Agent:
20140295610 - Spectroscopic sensor and method for manufacturing same: A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting filter on the semiconductor substrate; and (c) forming a spectroscopic filter on the angle restricting filter. The step (c) of forming a spectroscopic filter includes: (c1) forming... Agent: Seiko Epson Corporation
20140295612 - Solar cell and manufacturing method thereof: A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell... Agent:
20140295613 - Method for fabricating heterojunction interdigitated back contact photovoltaic cells: The disclosed technology generally relates photovoltaic devices, and more particularly to methods of fabricating heterojunction interdigitated back contact photovoltaic cells having interdigitated emitter regions and back surface field regions. In one aspect, a method of forming on a substrate a patterned n+ a-Si:H layer and a patterned p+ a-Si:H layer,... Agent: Imec Vzw
20140295614 - Solar cell and method of manufacturing the same: A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a second doped region of a second conductive type opposite the first conductive type on a semiconductor substrate of the first conductive... Agent:
20140295615 - Multi-nozzle organic vapor jet printing: Systems and methods are provided for depositing thin patterned films of materials in which individual elements of the patterned film are deposited by two or more nozzles having different geometries. The different nozzle geometries may include one or more of different throttle diameters, different exhaust diameters, different cross-sectional shapes, different... Agent: Universal Display Corporation
20140295617 - Method for manufacturing semiconductor device: A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In the semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and an aluminum film is provided in contact with the oxide semiconductor layer. Oxygen doping... Agent:
20140295616 - Semiconductor device and method for manufacturing semiconductor device: To provide a miniaturized transistor having favorable electric characteristics. An oxide semiconductor layer is formed to cover a source electrode layer and a drain electrode layer, and then regions of the oxide semiconductor layer which overlap with the source electrode layer and the drain electrode layer are removed by polishing.... Agent:
20140295619 - Bump, method for forming the bump, and method for mounting substrate having the bump thereon: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any... Agent: Tanaka Kikinzoku Kogyo K.k.
20140295620 - Method of manufacturing semiconductor device having plural semiconductor chips stacked one another: Disclosed herein is a method of manufacturing a semiconductor device that includes stacking a plurality of semiconductor chips to form a first chip laminated body, providing an underfill material to fill gaps between the semiconductor chips so that a fillet portion is formed around the first chip laminated body, and... Agent:
20140295618 - Methods of manufacturing flip chip semiconductor packages using double-sided thermal compression bonding: Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface.... Agent: Stats Chippac, Ltd.
20140295621 - Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same: An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.... Agent:
20140295622 - Novel build-up package for integrated circuit devices, and methods of making same: A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example... Agent: Micron Technology, Inc.
20140295623 - Method of packaging a chip and a substrate: Disclosed is a method of packaging a chip and a substrate, including the steps of forming a substrate with a thickness ranging from 70 to 150 μm, which comprises a dielectric layer, a circuit metal layer stacked on the dielectric layer and bonding pads higher than the dielectric layer by... Agent: Kinsus Interconnect Technology Corp.
20140295624 - Package with passive devices and method of forming the same: An embodiment is a device comprising a substrate, a metal pad over the substrate, and a passivation layer comprising a portion over the metal pad. The device further comprises a metal pillar over and electrically coupled to the metal pad, and a passive device comprising a first portion at a... Agent:
20140295625 - Manufacturing method of semiconductor device: A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor... Agent:
20140295626 - Etchant composition, and method of manufacturing a display substrate using the same: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by... Agent: Samsung Display Co., Ltd.
20140295627 - Method for adjusting the threshold voltage of ltps tft: The N-type poly-silicon is applied in the LTPS productions. The LTPS productions comprise an N-type poly-silicon and a P-type poly-silicon. The N-type poly-silicon, from bottom to top, successively includes a substrate layer, a SiOx layer, a SiNx layer, a metal layer and a photoresist. The substrate layer is an A-type... Agent: Everdisplay Optronics (shanghai) Limited
20140295628 - Mos p-n junction schottky diode device and method for manufacturing the same: A MOS P-N junction Schottky diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure and a doped region having a second conductivity type adjacent to the gate structure in the substrate. An ohmic... Agent:
20140295629 - Method of forming semiconductor device: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The... Agent: United Microelectronics Corp.
20140295630 - Sige sram butted contact resistance improvement: The present disclosure relates to a method for fabricating a butted a contact arrangement configured to couple two transistors, wherein an active region of a first transistor is coupled to a gate of a second transistor. The gate of the second transistor is formed from a gate material which comprises... Agent:
20140295631 - Analog floating-gate capacitor with improved data retention in a silicided integrated circuit: An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, and includes portions serving as a transistor gate electrode, a plate of a metal-to-poly... Agent:
20140295633 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device includes: a semiconductor substrate including a drain, a drift making contact with a front face of the drain, a body contacting with a front face of the drift, a source provided in part of a front face of the body, and a floating... Agent: Toyota Jidosha Kabushiki Kaisha
20140295632 - Method of fabricating semiconductor device having grooved source contact region: In a method of fabricating a semiconductor device, a channel layer is formed on a substrate, and trench patterns are formed in the channel layer. Impurity bodies are formed in the channel layer between the trench patterns, and grooves are formed between the trench patterns in the impurity bodies formed... Agent: Samsung Electronics Co., Ltd.
20140295634 - Multi-gate field-effect transistor process: A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on... Agent:
20140295635 - Method of manufacturing transistor and method of manufacturing amplifier: A method of manufacturing a transistor with suppressed characteristic variations caused by gate current, and a method of manufacturing an amplifier using such a transistor are provided. The transistor includes a SiC substrate, an AlGaN barrier layer, and a GaN buffer layer grown on the SiC substrate, a source electrode... Agent: Mitsubishi Electric Corporation
20140295636 - Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional nand device: A method of making a semiconductor device includes forming a stack of alternating layers of a first material and a second material over a substrate, etching the stack to form at least one opening extending partially through the stack and forming a masking layer on a sidewall and bottom surface... Agent: Sandisk Technologies, Inc.
20140295637 - Spacer replacement for replacement metal gate semiconductor devices: A method comprising steps of removing a first dielectric material, including a hard mask layer and one or more spacer material layers, from a semiconductor device having a sacrificial gate whose sidewalls being covered by said spacer material layers, and a raised source and a raised drain region with both,... Agent: International Business Machines Corporation
20140295639 - Field focusing features in a reram cell: A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes... Agent: Freescale Semiconductor, Inc.
20140295638 - Three dimensional memory array architecture: Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged... Agent: Micron Technology, Inc.
20140295640 - Capacitor arrays for minimizing gradient effects and methods of forming the same: Methods of forming semiconductor devices. The method includes forming a capacitor array comprising a plurality of cells in a two-dimensional grid. The step of forming includes forming a plurality of operational capacitors in a first subset of the plurality of cells along a diagonal of the array, the plurality of... Agent:
20140295641 - Semiconductor memory device and method of manufacturing the same: A semiconductor memory device includes a semiconductor substrate in which an active region and an isolation region are defined, a tunnel insulating layer and a floating gate formed on the semiconductor substrate in the active region, a trench formed in the semiconductor substrate in the isolation region, a dielectric layer... Agent:
20140295642 - Double layer transfer method: A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding... Agent:
20140295643 - Wafer processing method: In a wafer processing method, a modified layer is formed inside a wafer along planned dividing lines by irradiating the wafer with a laser beam with such a wavelength as to be transmitted through the wafer from the back surface side of the wafer along the dividing lines. A first... Agent: Disco Corporation
20140295646 - Dicing sheet with protective film forming layer and chip fabrication method: A dicing sheet with a protective film forming layer has a substrate film, an adhesive layer, and a protective film forming layer, and at a minimum, the adhesive layer is formed in an area surrounding the protective film forming layer in a planar view, and the substrate film has the... Agent:
20140295644 - Method of manufacturing semiconductor chips: Provided is a method of manufacturing semiconductor chips superior in chip yield, reduction in chipping, and handling ability. An insulating film in a dividing region is removed by plasma etching to a front surface. Then, roughness on a resist mask formed on the front surface is removed by plasma treatment... Agent:
20140295645 - Sapphire substrate flattening method: A sapphire substrate flattening method including an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate, an annealing step of annealing the sapphire substrate, a wafer mounting step of mounting the sapphire substrate processed by the annealing step on a stage having a holding surface... Agent: Disco Corporation
20140295647 - Bulk fin-field effect transistors with well defined isolation: A computer program storage product includes instructions for forming a fin field-effect-transistor. The instructions are configured to perform a method. The method includes implanting a dopant into an exposed portion of a semiconductor substrate within a cavity. The cavity is formed in a dielectric layer on the semiconductor substrate. The... Agent: International Business Machines Corporation
20140295648 - Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus: Disclosed is a method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere... Agent: Hitachi Kokusai Electric Inc.
20140295649 - Synthesis, capping and dispersion of nanocrystals: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange... Agent: Pixelligent Technologies, LLC
20140295650 - Method for fabricating patterned structure of semiconductor device: A method of fabricating a patterned structure of a semiconductor device is provided. First, a substrate having a first region and a second region is provided. A target layer, a hard mask layer and a first patterned mask layer are then sequentially formed on the substrate. A first etching process... Agent: United Microelectronics Corp.
20140295651 - Backside stress compensation for gallium nitride or other nitride-based semiconductor devices: A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate... Agent:
20140295652 - Gan vertical superjunction device structures and fabrication methods: A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride... Agent:
20140295653 - Manufacturing apparatus and manufacturing method for quantum dot material: A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the... Agent: Soochow University
20140295654 - Method of forming an integrated circuit: A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, the patterned mask layer having a plurality of first features with a first pitch. The method includes patterning the material layer by using the patterned mask layer as a mask to form the... Agent:
20140295655 - Method for forming through-silicon via (tsv) with diffused isolation well: A semiconductor device and method for forming the same provide a through silicon via (TSV) surrounded by a dielectric liner. The TSV and dielectric liner are surrounded by a well region formed by thermal diffusion. The well region includes a dopant impurity type opposite the dopant impurity type of the... Agent:
20140295656 - Apparatus and method for thin wafer transfer: A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the... Agent: Brewer Science Inc.
20140295657 - Method of manufacturing a semiconductor device having multi-layered interconnect structure: Disclosed is a semiconductor device provided with an active element in a multilayer interconnect layer and decreased in a chip area. A second interconnect layer is provided over a first interconnect layer. A first interlayer insulating layer is provided in the first interconnect layer. A semiconductor layer is provided in... Agent:
20140295658 - Semiconductor device comprising trench gate and buried source electrodes: A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends... Agent:
20140295660 - Method of forming semiconductor device: A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to... Agent:
20140295659 - Method of making a gate structure: A method of making a gate structure includes forming a trench in a dielectric layer. The method further includes forming a gate dielectric layer in the trench. The gate dielectric layer defines an opening in the dielectric layer. The method includes forming a gate electrode in the opening. Forming the... Agent:
20140295661 - Passivated copper chip pads: A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in... Agent:
20140295662 - Semiconductor devices and methods of manufacturing the same: A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.... Agent:
20140295663 - Aluminum interconnection apparatus: An aluminum interconnection apparatus comprises a metal structure formed over a substrate, wherein the metal structure is formed of a copper and aluminum alloy, a first alloy layer formed underneath the metal structure and a first barrier layer formed underneath the first alloy layer, wherein the first barrier layer is... Agent:
20140295664 - Methods of forming masking layers for use in forming integrated circuit products: One illustrative method disclosed herein includes forming a seed layer above a structure, forming a nucleation layer on the seed layer, forming a plurality of spaced-apart, vertically oriented alloy structures that are comprised of materials from the seed layer and the nucleation layer, forming a sacrificial material layer above the... Agent: Globalfoundries Inc.
20140295665 - Method for removing native oxide and associated residue from a substrate: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia... Agent:
20140295666 - Compound semiconductor device and manufacturing method therefor: A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the... Agent: Fujitsu Limited
20140295667 - Method of manufacturing semiconductor device: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas... Agent: Hitachi Kokusai Electric Inc.
20140295668 - Reducing bowing bias in etching an oxide layer: An etching method in which bowing or lateral etching is reduced or minimized, particularly with respect to bowing which can occur in etching of an oxide layer in high aspect ratio structures. It has been recognized that such bowing typically occurs in the upper portion of the oxide layer in... Agent:
20140295669 - Pattern forming method: According to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the... Agent: Kabushiki Kaisha Toshiba
20140295670 - Dense oxide coated component of a plasma processing chamber and method of manufacture thereof: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a... Agent: Lam Research Corporation
20140295671 - Plasma processing apparatus and plasma processing method: A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film... Agent:
20140295672 - Vacuum processing apparatus and operating method of the same: A vacuum processing apparatus including an atmospheric transfer chamber including on a front side a plurality of cassette stages on which cassettes having stored samples as processing objects are to be mounted, a first transfer chamber which is disposed via a lock chamber on a back side of the atmospheric... Agent: Hitachi High-technologies Corporation
20140295673 - Silane or borane treatment of metal thin films: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or... Agent:
20140295674 - Angled gas cluster ion beam: An angled gas cluster ion beam (“GCIB”) and methods for using the same are disclosed. Gas clusters are ionized to create a gas cluster beam directed towards a semiconductor wafer. The semiconductor wafer is positioned so that it intercepts the gas cluster beam at an angle that is non-perpendicular to... Agent: International Business Machines Corporation
20140295675 - Silicon oxide film forming method and silicon oxide film forming apparatus: A silicon oxide film forming method includes performing a set one or more times, the set including: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a... Agent: Tokyo Electronic Limited
20140295676 - Method of operating vertical heat treatment apparatus, vertical heat treatment apparatus and non-transitory recording medium: A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the... Agent: Tokyo Electron Limited
20140295677 - Film forming method and film forming apparatus: A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber;... Agent: Tokyo Electron Limited09/25/2014 > 66 patent applications in 51 patent subcategories.
20140287535 - Electronic device and method for fabricating the same: An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which... Agent: Sk Hynix Inc.
20140287534 - Highly sensitive magnetic tunable heterojunction device for resistive switching: The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic field at room temperature.... Agent: Council Of Scientific & Industrial Research
20140287537 - Method of fabricating a magnetoresistive element: A method of fabricating a magnetoresistive element, the method comprising: forming a first plurality of layers without breaking a vacuum, the first plurality of layers sequentially comprising: a first nonmagnetic conductive layer; a first ferromagnetic layer comprising an amorphous structure and a first magnetization direction; a nonmagnetic tunnel barrier layer;... Agent:
20140287536 - Method of manufacturing a magnetoresistive-based device with via integration: A method is provided for forming a first via with an electrically conductive material, for example, copper, that is formed over and coupled to a conductive landing pad of an MRAM array. A sputter step is performed to lower the surface of the first via below that of a surrounding... Agent: Everspin Technologies, Inc.
20140287538 - Warp correction device and warp correction method for semiconductor element substrate: A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect... Agent: Sintokogio, Ltd.
20140287539 - Film formation apparatus and film formation method: At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater 16 is provided, and a space where an upper heater 19 is provided are made in... Agent:
20140287540 - Deposition apparatus and method of recycling solution: A deposition apparatus and a method for recycling a solution. The deposition apparatus includes a bath in which a solution used in a chemical bath deposition (CBD) method is filled, a tank in which the solution used in the CBD method is temporarily stored, and a filter unit for filtering... Agent: Samsung Sdi Co., Ltd.
20140287541 - Semiconductor chip and semiconductor device: When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality... Agent: Renesas Electronics Corporation
20140287542 - Ir sensing transistor and manufacturing method of display device including the same: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor;... Agent:
20140287543 - Organic light emitting diode display: Disclosed is an organic light emitting diode (OLED) display comprising a substrate; an organic light emitting element disposed on the substrate; an encapsulation substrate disposed on the organic light emitting element; and an adhesive layer formed on the substrate, covering the organic light emitting element, and bonding the substrate on... Agent:
20140287544 - High reliability etched-facet photonic devices: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.... Agent: Binoptics Corporation
20140287545 - High reliability etched-facet photonic devices: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.... Agent: Binoptics Corporation
20140287546 - Light-emitting device and method for manufacturing light-emitting device: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the... Agent:
20140287547 - Inhibiting propagation of surface cracks in a mems device: A microelectromechanical systems (MEMS) device (58) includes a structural layer (78) having a top surface (86). The top surface (86) includes surface regions (92, 94) that are generally parallel to one another but are offset relative to one another such that a stress concentration location (90) is formed between them.... Agent: Freescale Semiconductor, Inc.
20140287548 - Mems device with release aperture: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20140287549 - Method and pre-product for producing a thermoelectric module: A method for producing a thermoelectric module with a plurality of thermoelectric leg elements, which are electrically connected in series at opposite ends, includes arranging the leg elements on an electrically conducting plate, connecting the leg elements to the electrically conducting plate, and cutting up the electrically conducting plate into... Agent: Robert Bosch Gmbh
20140287550 - Plasma enhanced thermal evaporator: The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The... Agent:
20140287551 - Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials: A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region, treating the surface region with one or more cleaning process including an aqueous solution to remove one or more contaminants and/or particulates, and forming a lower electrode layer overlying the... Agent: Stion Corporation
20140287552 - Method for processing thin film and method for manufacturing semiconductor device: A stable and minute processing method of a thin film is provided. Further, a miniaturized semiconductor device is provided. A method for processing a thin film includes the following steps: forming a film to be processed over a formation surface; forming an organic coating film over the film to be... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140287553 - Method for forming chip-on-wafer assembly: A device includes a bottom chip and an active top die bonded to the bottom chip. A dummy die is attached to the bottom chip. The dummy die is electrically insulated from the bottom chip.... Agent:
20140287554 - Method for plating a semiconductor package lead: A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of... Agent: Freescale Semiconductor, Inc.
20140287555 - Semiconductor device including semiconductor construct installed on base plate, and manufacturing method of the same: A semiconductor device includes a semiconductor construct including a semiconductor substrate and an external connection electrode provided to protrude on a surface of the semiconductor substrate, a base plate on which the semiconductor construct is installed, and a sealing layer stacked on the semiconductor substrate except for the external connection... Agent:
20140287556 - Methods of forming bump and semiconductor device with the same: Provided are methods of forming a bump and a semiconductor device with the same. The method may include providing a substrate with pads, forming a bump maker layer to cover the pads and include a resin and solder particles, thermally treating the bump maker layer to aggregate the solder particles... Agent:
20140287558 - Package including an interposer having at least one topological feature: Embodiments include but are not limited to apparatuses and systems including semiconductor packages, e.g. memory packages, having an interposer including at least one topological feature, such as a depression in a surface of the interposer, a die coupled to the surface of the interposer, and an encapsulant material formed over... Agent:
20140287557 - Semiconductor device: In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element. The conductive wiring includes an underlying layer formed on... Agent: Nichia Corporation
20140287559 - Semiconductor device and method for manufacturing same: A semiconductor device includes: an n−-type base layer; a p-type base layer formed in a part of a front surface portion of the n−-type base layer; an n+-type source layer formed in a part of a front surface portion of the p-type base layer; a gate insulating film formed on... Agent: Rohm Co., Ltd.
20140287560 - Integrated semiconductor device having an insulating structure and a manufacturing method: An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second... Agent:
20140287561 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer,... Agent: National Chiao Tung University
20140287562 - Method of fabricating a semiconductor device: There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first... Agent: Semiconductor Energy Laboratory Co., Ltd.
20140287563 - Method of manufacturing semiconductor device: An aspect of the present embodiment, there is provided a method of manufacturing a semiconductor device, including adsorbing a photolytic group on a hydrophilic surface of a substrate on which a concave portion is provided, irradiating a first area of the substrate with light to transform the photolytic group to... Agent: Kabushiki Kaisha Toshiba
20140287564 - Semiconductor devices having shallow junctions: Semiconductor devices are provided including a substrate having a first surface and a second surface recessed from opposite sides of the first surface, a gate pattern formed on the first surface and having a gate insulating layer and a gate electrode, a carbon-doped silicon buffer layer formed on the second... Agent: Samsung Electronics Co., Ltd.
20140287565 - Method for manufacturing semiconductor structure: The present invention provides a method for manufacturing a semiconductor structure, which comprises: a) providing a substrate (100); b) forming a dummy gate stack on the substrate (100), wherein the dummy gate stack consists of a gate dielectric layer (203) and a dummy gate (201) located on the gate dielectric... Agent:
20140287566 - Method of making a semiconductor chip including identifying marks: A semiconductor chip includes a first mark for identifying a position of the chip within an exposure field. The semiconductor chip includes a first matrix in a first layer of the chip and a second mark within the first matrix identifying a position of the exposure field on a wafer.... Agent:
20140287567 - Manufacturing method for semiconductor device: According to one embodiment, a first adhesive layer is formed on one major surface of a first substrate. The first substrate and a second substrate are adhered using a second adhesive layer that has thermosetting properties and covers the first adhesive layer, wherein a bonding strength between the second substrate... Agent: Kabushiki Kaisha Toshiba
20140287568 - Method for manufacturing semiconductor device and exposure mask used in the same method: A method for manufacturing a semiconductor device is disclosed in which the probability of occurrence of a crack is reduced and in which manufacturing cost is also reduced. An exposure mask used in the method is disclosed. Protrusion portions are formed in intersections of scribe lines in an outermost periphery... Agent: Fuji Electric Co., Ltd.
20140287570 - Method of fabricating a gallium nitride merged p-i-n schottky (mps) diode: A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled... Agent:
20140287569 - Method of manufacturing semiconductor device: According to one embodiment, a method includes forming a first SiGe layer having a first profile of a concentration of Ge on a semiconductor substrate, forming a second SiGe layer having a second profile of a concentration of Ge on the first SiGe layer, the second profile lower than a... Agent: Kabushiki Kaisha Toshiba
20140287571 - Double-active-layer structure with a polysilicon layer and a microcrystalline silicon layer, method for manufacturing the same and its application: A first amorphous silicon layer is formed over a substrate and a second amorphous silicon layer is formed over the first amorphous silicon layer. When a laser annealing process is performed, the second amorphous silicon layer absorbs more laser light than the first amorphous silicon layer does. The first amorphous... Agent:
20140287572 - Manufacturing method of mis-type semiconductor device: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.... Agent: Toyoda Gosei Co., Ltd.
20140287573 - Semiconductor device manufacturing method: A semiconductor device manufacturing method includes (a) forming a buried diffusion layer of a first conductivity type in a semiconductor substrate of a second conductivity type, (b) forming a first impurity region by implanting an impurity of the first conductivity type, (c) diffusing the buried diffusion layer and the first... Agent: Seiko Epson Corporation
20140287574 - Method of manufacturing semiconductor device having field plate electrode: According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench. An electrode material is formed to... Agent: Kabushiki Kaisha Toshiba
20140287575 - Spatial orientation of the carbon nanotubes in electrophoretic deposition process: A new method of electrophoretic nanotube deposition is proposed wherein individual nanotubes are placed on metal electrodes which have their length significantly exceeding their width, while the nanotube length is chosen to be close to that of the metal electrode. Due to electrostatic attraction of individual nanotube to the elongated... Agent:
20140287576 - Semiconductor device manufacturing method and semiconductor device: According to one embodiment, a semiconductor device manufacturing method includes: forming a film to be a first metal layer on a substrate where an element portion is formed; forming a first insulating layer provided with an opening on the film to be the first metal layer; forming a second metal... Agent: Kabushiki Kaisha Toshiba
20140287578 - Electroplating methods for fabricating integrated circuit devices and devices fabricated thereby: Provided are methods of fabricating a semiconductor device and semiconductor devices fabricated thereby. In the methods, dummy recess regions may be formed between cell recess regions and a peripheral circuit region. Due to the presence of the dummy recess regions, it may be possible to reduce a concentration gradient of... Agent:
20140287577 - Methods for producing interconnects in semiconductor devices: A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying... Agent:
20140287579 - Methods for fabricating dual damascene structures in low temperature dielectric materials: Methods for fabricating dual damascene structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include patterning a first mask layer atop a substrate disposed in a process chamber, wherein the substrate includes one or more low temperature dielectric layers to define a... Agent: Applied Materials, Inc.
20140287580 - Method for forming conductive structure, and plating apparatus and plating method: A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior... Agent:
20140287581 - Through silicon via with embedded barrier pad: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below... Agent:
20140287582 - Method of manufacturing metal silicide layer: According to one embodiment, a method of manufacturing a metal silicide layer, the method includes forming a metal layer including impurities on a silicon layer by a vapor deposition method using a gas of a metal and a gas of the impurities, and forming a metal silicide layer including the... Agent:
20140287583 - Electrically conductive paste for front electrode of solar cell and preparation method thereof: The present invention provides an electrically conductive paste for a front electrode of a solar cell and a preparation method thereof. The electrically conductive paste is composed of a corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more glass-free Pb—Te based crystalline compounds... Agent: Soltrium Technology, Ltd. Shenzhen
20140287584 - Microelectronic devices with through-silicon vias and associated methods of manufacturing: Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The... Agent: Micron Technology, Inc.
20140287585 - Ruthenium film formation method and storage medium: A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.... Agent: Tokyo Electron Limited
20140287586 - Method of manufacturing semiconductor device: According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and... Agent: Kabushiki Kaisha Toshiba
20140287588 - Deposition method and deposition apparatus: [Solving Means] A deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned. A film is caused to grow on the cleaned surface of the... Agent:
20140287587 - Method for forming fine patterns of semiconductor device using directed self-assembly process: Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing... Agent: Dongjin Semichem Co., Ltd
20140287590 - Optical waveguide structure and method of manufacture thereof: A method of manufacture of an optical waveguide structure including the steps of: providing a multilayer semiconductor wafer including a III-V semiconductor substrate, a III-V semiconductor top layer and an etch stop layer sandwiched therebetween, the etch stop layer including aluminium and phosphorous; and etching through the top layer to... Agent: U2t Photonics Uk Limited
20140287591 - Method for etching film containing cobalt and palladium: Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas... Agent: Tokyo Electron Limited
20140287593 - High throughput multi-layer stack deposition: Methods and apparatus for high rate formation of multi-layer stacks on semiconductor substrate is provided. A chamber for forming such stacks at high rates includes a first precursor line and a second precursor line. The first precursor line is coupled to a first diverter, which is coupled to a gas... Agent:
20140287592 - Methods of forming a layer: According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of R3yM(NR1R2)x-y and M(OR1R2) and using a silicon precursor expressed by HzSi(NR4R5)4-z. Each of “R1”, “R2”, “R3”, “R4”, and “R5” are hydrogen or hydrocarbon; “R3” is different than... Agent:
20140287594 - Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium: A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to... Agent: Hitachi Kokusai Electric Inc.
20140287595 - Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium: A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher... Agent: Hitachi Kokusai Electric Inc.
20140287596 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a... Agent: Hitachi Kokusai Electric Inc.
20140287597 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element... Agent: Hitachi Kokusai Electric Inc.
20140287598 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas,... Agent: Hitachi Kokusai Electric Inc.
20140287599 - Substrate processing apparatus, process container, and method of manufacturing semiconductor device: Provided are a substrate processing apparatus, a process container and a method of manufacturing a semiconductor device capable of improving the quality of a thin film by stabilizing conditions of heating a substrate when the thin film is formed on the substrate heated using a heating unit installed outside the... Agent: Hitachi Kokusai Electric Inc.Previous industry: Chemistry: analytical and immunological testing
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