|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 01/22/2015 > 95 patent applications in 71 patent subcategories.
20150024515 - Systems, methods, and apparatus for minimizing cross coupled wafer surface potentials: This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and... Agent:
20150024516 - Electrostatic phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating: Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto the LED structure including the layer of binder material... Agent: Cree, Inc.
20150024517 - Plasma etcher chuck band: A plasma etch tool includes a wafer chuck with a chuck base and at least one functional component layer attached to the chuck base. A perimeter of the functional component layer has a polymer material permanently attached to it that extends to within 2 millimeters of a top surface of... Agent:
20150024519 - Method for producing organic electroluminescent element: A method for producing an organic electroluminescent element including: a first producing process of stacking at least a first electrode layer, a dielectric layer, and a second electrode layer on a substrate in this order, the organic electroluminescent element having a light-emitting portion that is in contact with an inner... Agent: Showa Denko K.k.
20150024518 - Method of forming a selectively adjustable gate structure: The present disclosure relates to a method of forming a gate structure that can be selectively adjusted to reduce critical-dimension (CD) variations. In some embodiments, the method is performed by forming a gate structure having a first length over a semiconductor substrate. The first length of the gate structure is... Agent:
20150024520 - Semiconductor device manufacturing method and manufacturing device: A marker which is a reference of a coordinate position defining a region of a chip that is manufactured in a semiconductor substrate is formed. A crystal defect on the semiconductor substrate is detected. The coordinate position of the detected crystal defect is detected on the basis of the marker.... Agent:
20150024521 - Plasma processing apparatus and plasma processing method: There is provided a plasma processing apparatus which compares a plurality of patterns detected using an interference light intensity pattern using a wavelength from at least one preset film of the plurality of film layers as a parameter and an intensity pattern using a wavelength of light from the other... Agent:
20150024523 - A method for producing an rfid transponder by etching: e
20150024524 - Methods for manufacturing isolated deep trench and high-voltage led chip: A method for manufacturing a deep isolation trench (221) and a method for manufacturing a high-voltage LED chip. Steps of the method for manufacturing a deep isolation trench (221) are as follows: forming a mask layer (202) on a substrate (200), and forming, in the mask layer, through etching, multiple... Agent: Enraytek Optoelectronics Co., Ltd
20150024522 - Organometal materials and process: Coating compositions are used to deposit films on electronic device substrates, which films are subjected to conditions that form an oxymetal precursor material layer on a matrix precursor material layer, and then such layers are cured to form a cured oxymetal layer disposed on a cured matrix layer.... Agent:
20150024525 - Led lighting apparatus and method for fabricating wavelength conversion member for use in the same: A method of forming a light-emitting diode (LED) lighting apparatus, including forming an LED on a printed circuit board, and forming a wavelength conversion member on the LED, the wavelength conversion member being spaced apart from the LED. Forming the wavelength conversion member includes transfer molding a wavelength conversion layer... Agent:
20150024527 - Method for producing spot-size convertor: A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and... Agent:
20150024526 - Optical device structure using gan substrates and growth structures for laser applications: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.... Agent: Soraa Laser Diode, Inc.
20150024528 - Apparatus and method for manufacturing organic light-emitting diode display: Provided are an apparatus for manufacturing an OLED display and a method of manufacturing OLED display. According to another aspect of the present invention, there is provided the method of manufacturing an OLED display which includes placing a substrate having rows and columns of pixels through on a stage, ejecting... Agent: Samsung Display Co., Ltd.
20150024529 - Display apparatus and method of manufacturing the same: A display apparatus includes a base substrate, a data line to transmit a data signal, a gate line disposed on the base substrate and insulated from the data line, and a pixel electrically connected to the gate line and/or the data line via a thin film transistor. At least one... Agent: Samsung Display Co., Ltd.
20150024530 - Method of manufacturing an oxide semiconductor device and method of manufacturing a display device having the same: Disclosed is a method of manufacturing an oxide semiconductor device, including: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an active pattern on the gate insulating layer; forming a first mask pattern on the gate insulating layer and the active pattern;... Agent: Samsung Display Co., Ltd.
20150024531 - P-type doping layers for use with light emitting devices: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V... Agent: ManutiusIPInc.
20150024532 - Electrically conductive polymers: An electrically conductive film suited to use as a transparent anode, a method of forming the film, and an electronic device comprising the film are disclosed. The device includes a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces.... Agent:
20150024533 - Method of forming a semiconductor device: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening... Agent:
20150024534 - Two degree of freedom dithering platform for mems sensor calibration: Systems and methods for two degree of freedom dithering for micro-electromechanical system (MEMS) sensor calibration are provided. In one embodiment, a method for a device comprises forming a MEMS sensor layer, the MEMS sensor layer comprising a MEMS sensor and an in-plane rotator to rotate the MEMS sensor in the... Agent:
20150024536 - Mems device and method of manufacturing a mems device: MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate and a backplate supported by the substrate. The backplate includes elongated protrusions.... Agent:
20150024535 - Semiconductor sensor device with footed lid: A semiconductor sensor device is packaged using a footed lid instead of a pre-molded lead frame. A semiconductor sensor die is attached to a first side of a lead frame. The die is then electrically connected to leads of the lead frame. A gel material is dispensed onto the sensor... Agent: Freescale Semiconductor, Inc.
20150024537 - Ultrasonic transducer, biological sensor, and method for manufacturing an ultrasonic transducer: A method for manufacturing an ultrasonic transducer includes: forming a piezoelectric element by laminating a lower electrode, a piezoelectric body, and an upper electrode on a first face of a support film; affixing a reinforcing substrate that covers the piezoelectric element to the first face of the support film; forming... Agent:
20150024538 - Vapor dispensing apparatus and method for solar panel: An apparatus includes a manifold coupled to a vapor source, the manifold having a plurality of nozzles, an inner cylinder, and an outer cylinder containing the inner cylinder with a space defined between the inner and outer cylinders. One of the inner cylinder or outer cylinder is rotatable with respect... Agent: Tsmc Solar Ltd.
20150024539 - Formulation of colloidal titanium-oxide solutions composition for coating and printing methods, and improvement of the output and lifespan of organic p-i-n/n-i-p photovoltaic cells: The invention also relates to a colloidal titanium-oxide nanoparticle solution containing a dispersion of titanium-oxide nanoparticles in a solvent or system of solvents, the viscosity of which is between 4 and 54 cP, said solution being particularly obtainable according to the method of the invention, as well as to the... Agent: Ardeje
20150024540 - Device and method for producing thin films: In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation.... Agent:
20150024541 - Method for fabricating photovoltaic cells with plated contacts: The disclosed technology relates generally to photovoltaic cells, and more particularly to photovoltaic cells with plated metal contacts. In one aspect, a method of fabricating a photovoltaic cell with a metal contact pattern on a surface of a semiconductor substrate includes locally smoothening portions of the surface of the semiconductor... Agent:
20150024542 - Segmented thin film solar cells: Use of chemical mechanical polishing (CMP) and/or pure mechanical polishing to separate sub-cells in a thin film solar cell. In one embodiment the CMP is only used to separate the active, thin film layer into sub-cells, with scribing still being used to achieve sub-cell separation in conductive layers above and... Agent: International Business Machines Corporation
20150024543 - Preparation of copper selenide nanoparticles: A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide-containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent... Agent:
20150024544 - Method for manufacturing semiconductor device: An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in... Agent:
20150024547 - Emi package and method for making same: An integrated circuit structure includes a substrate, a photosensitive molding on a first side of the substrate, a via formed in the molding, and a conformable metallic layer deposited over the first side of the substrate and in the via. A through via may be formed through the substrate aligned... Agent:
20150024545 - Stacked package structure and method of manufacturing a package-on-package device: A stacked package structure is provided. The stacked package structure includes a stacked package including a lower semiconductor package, an upper semiconductor package disposed on the lower semiconductor package and spaced a predetermined distance apart from the lower semiconductor package, an inter-package connecting portion electrically connecting the lower semiconductor package... Agent:
20150024546 - System, structure, and method of manufacturing a semiconductor substrate stack: A method of manufacturing a semiconductor substrate structure for use in a semiconductor substrate stack system is presented. The method includes a semiconductor substrate which includes a front-face, a backside, a bulk layer, an interconnect layer that includes a plurality of inter-metal dielectric layers sandwiched between conductive layers, a contact... Agent:
20150024549 - Alignment of integrated circuit chip stack: The present disclosure relates to methods and devices for manufacturing a three-dimensional chip package. A method includes forming a linear groove on an alignment rail, attaching an alignment rod to the linear groove, forming alignment channels on a plurality of integrated circuit chips, and aligning the plurality of integrated circuit... Agent: International Business Machines Corporation
20150024548 - Computer readable medium encoded with a program for fabricating 3d integrated circuit device using interface wafer as permanent carrier: A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a 3D integrated circuit structure. Provided are an interface wafer including a first wiring layer and through-silicon vias, and a first active circuitry layer wafer including active circuitry. The first... Agent: International Business Machines Corporation
20150024550 - Methods for producing semiconductor devices: A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side... Agent:
20150024551 - Semiconductor chip bonding apparatus and method of forming semiconductor device using the same: A method of manufacturing a semiconductor device includes: providing a first substrate that includes internal wiring, the first substrate including an array of chip mounting regions that includes a first chip mounting region; placing the first substrate on a first carrier line; providing a first semiconductor chip; placing the first... Agent:
20150024552 - Substrate, chip package and method for manufacturing substrate: A substrate includes a first wiring substrate, a second wiring substrate, and an adhesive sheet. The first wiring substrate includes a number of first connecting pads and a first penetrating room. The second wiring substrate includes a number of second connecting pads. The adhesive sheet includes a number of through... Agent: Zhen Ding Technology Co., Ltd.
20150024553 - Power module package: An integrated power module includes a substantially planar insulated metal substrate having at least one cut-out region; at least one substantially planar ceramic substrate disposed within the cut-out region, wherein the ceramic substrate is framed on at least two sides by the insulated metal substrate, the ceramic substrate including a... Agent:
20150024554 - Chip to package interface: In accordance with an embodiment of the present invention, a semiconductor package includes a semiconductor chip disposed within an encapsulant, and a first coil disposed in the semiconductor chip. A dielectric layer is disposed above the encapsulant and the semiconductor chip. A second coil is disposed above the dielectric layer.... Agent:
20150024555 - Semiconductor device, electronic device, and semiconductor device manufacturing method: A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder... Agent: Fujitsu Limited
20150024556 - Method for manufacturing semiconductor device: A semiconductor device includes an input electrode provided on a front surface of a semiconductor substrate of a first conductivity type and an output electrode provided on a rear surface of the semiconductor substrate. The device has reduced deterioration of electrical characteristics when manufactured by a method including introducing impurities... Agent: Fuji Electric Co., Ltd.
20150024558 - Asymmetrical replacement metal gate field effect transistor: An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator... Agent: International Business Machines Corporation
20150024557 - Semiconductor device having local buried oxide: There is set forth herein a semiconductor device fabricated on a bulk wafer having a local buried oxide region underneath a channel region of a MOSFET. In one embodiment the local buried oxide region can be self-aligned to a gate, and a source/drain region can be formed in a bulk... Agent:
20150024559 - System and method for integrated circuits with cylindrical gate structures: A system and method for integrated circuits with surrounding gate structures are disclosed. The integrated circuits system includes a transistor having a gate all around cylindrical (GAAC) nanowire channel with an interposed dielectric layer. The cylindrical nanowire channel being in a middle section of a semiconductor wire pattern connects the... Agent:
20150024560 - Gate encapsulation achieved by single-step deposition: When forming spacer structures enclosing a gate electrode structure of a transistor, a common problem is given by the thickness variation of the spacer structure obtained as a result of a first deposition process performed in a first chamber and a second, subsequent process performed in a second chamber. The... Agent:
20150024561 - Method for fabricating a finfet in a large scale integrated circuit: Systems and methods of fabricating a FinFET in large scale integrated circuit are disclosed. One illustrative method relates to a dummy gate process, wherein the fin structure is only formed in the gate electrode region by performing a photolithography process and an etching of a first dummy gate on a... Agent:
20150024562 - Method of forming semiconductor structure: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed... Agent:
20150024563 - Semiconductor device, method of manufacturing the semiconductor device, and electronic device: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film.... Agent:
20150024564 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device, includes forming a first gate oxide film in each of a first region and a second region by thermally oxidizing a silicon substrate, forming a CVD oxide film on the first gate oxide film, implanting fluorine into each of the first region and... Agent:
20150024566 - Finlike structures and methods of making same: Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously... Agent:
20150024565 - Method of forming semiconductor device having embedded strain-inducing pattern: A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides... Agent:
20150024567 - Defect reduction for formation of epitaxial layer in source and drain regions: The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth. The mechanisms include controlled... Agent:
20150024568 - Spacer replacement for replacement metal gate semiconductor devices: A method comprising steps of removing a first dielectric material, including a hard mask layer and one or more spacer material layers, from a semiconductor device having a sacrificial gate whose sidewalls being covered by said spacer material layers, and a raised source and a raised drain region with both,... Agent:
20150024569 - Integrated circuits and methods of forming integrated circuits: A method of forming an integrated circuit includes forming a gate electrode over a substrate, forming a recess in the substrate and adjacent to the gate electrode, forming a diffusion barrier structure in the recess, forming an N-type doped silicon-containing structure over the diffusion barrier structure and thermally annealing the... Agent:
20150024570 - Scaling of bipolar transistors: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor;... Agent:
20150024571 - Resistive memory device and fabrication method thereof: A resistive memory device capable of implementing a multi-level cell (MLC) and a fabrication method thereof are provided. The resistive memory device includes a lower electrode connected to a switching device and including a first node and a second node formed on a top thereof to be spaced at a... Agent:
20150024572 - Process for faciltiating fin isolation schemes: Semiconductor fabrication methods are provided which include facilitating fabricating semiconductor fin structures by: providing a wafer with at least one fin extending above a substrate, the at least one fin including a first layer disposed above a second layer; mechanically stabilizing the first layer; removing at least a portion of... Agent:
20150024573 - Methods of forming replacement fins for a finfet semiconductor device by performing a replacement growth process: Various methods are disclosed herein for forming alternative fin materials that are in a stable or metastable condition. In one case, a stable replacement fin is grown to a height that is greater than an unconfined stable critical thickness of the replacement fin material and it has a defect density... Agent: Globalfoundries Inc.
20150024574 - Temporary bonding adhesive compositions and methods of manufacturing a semiconductor device using the same: A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane.... Agent:
20150024575 - Wafer alignment methods in die sawing process: A method includes forming a molding compound molding a lower portion of an electrical connector of a wafer therein. The molding compound is at a front surface of the wafer. The molding compound covers a center region of the wafer, and leaves an edge ring of the wafer not covered.... Agent:
20150024576 - Dicing sheet with protective film-forming layer, and method for producing chip: A dicing sheet with a protective film-forming layer includes a protective film-forming layer on an adhesive layer of an adhesive sheet with a peel strength adjusting layer being interposed therebetween. The adhesive sheet is composed of a base film and the adhesive layer. The dicing sheet with a protective film-forming... Agent:
20150024577 - Semiconductor device and method for manufacturing semiconductor device: A manufacturing method of a semiconductor device in which the threshold is corrected is provided. In a semiconductor device including a plurality of transistors each includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode... Agent:
20150024580 - Method for implant productivity enhancement: A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber... Agent:
20150024579 - Method of improving ion beam quality in an implant system: m
20150024578 - Methods for etching dielectric materials in the fabrication of integrated circuits: Methods for etching dielectric materials in the fabrication of integrated circuits are disclosed herein. In one exemplary embodiment, a method for fabricating an integrated circuit includes forming a layer of a first dielectric material over a gate electrode structure formed on a semiconductor substrate. The gate electrode structure includes a... Agent:
20150024581 - Method for manufacturing a semiconductor device: A method for manufacturing a semiconductor device in which an electrode structure is formed on a silicon carbide semiconductor substrate, includes forming a Schottky layer including a metal selected from the group titanium, tungsten, molybdenum, and chrome on a front surface of the silicon carbide semiconductor substrate; heating the Schottky... Agent: Fuji Electric Co., Ltd.
20150024582 - Method of making a gas distribution member for a plasma processing chamber: A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing... Agent:
20150024583 - Method of manufacturing liquid crystal display: A method of manufacturing a liquid crystal display includes disposing a gate electrode and a light blocking member on a substrate, disposing a source electrode and a drain electrode on the gate electrode to form a thin film transistor, disposing a data line on the light blocking member, disposing an... Agent: Samsung Display Co., Ltd.
20150024584 - Methods for forming integrated circuits with reduced replacement metal gate height variability: Methods for fabricating integrated circuits with reduced replacement metal gate height variability are provided. In an embodiment, a method includes providing a semiconductor substrate with a fin supported thereon and forming a conformal material layer overlying the fin and the semiconductor substrate. A trench is etched within the conformal material... Agent:
20150024585 - Systems and methods for fabricating gate structures for semiconductor devices: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.... Agent: Globalfoundries Inc.
20150024586 - Method for producing a monocrystalline metal/semiconductor compound: In the method for producing a monocrystalline metal-semiconductor compound on the surface of a semiconducting functional layer, initially a supply layer comprising the metal is applied to the functional layer. Thereafter, the reaction between the metal and the functional layer is triggered by way of annealing. The supply layer ends... Agent:
20150024587 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device is provided. An etch-target layer is formed on a substrate. A photoresist layer is formed on the etch-target layer. A first exposure process is performed using a first photo mask to form a plurality of first-irradiated patterns in the photoresist layer. The first... Agent:
20150024588 - Hard mask removal scheme: A method includes forming a barrier layer in a via hole and over a hard mask layer. The hard mask layer is disposed over a dielectric layer. The via hole is located through the dielectric layer and the hard mask layer. A filler layer is formed in the via hole... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150024589 - Method for assembling a microelectronic chip element on a wire element, and installation enabling assembly to be performed: Method for assembling includes: providing a system to transfer wire element from wire element supply device to wire element storage device; stretching wire element between supply and storage devices by tensioning; providing an individualized reservoir and separated chip elements, each including a connection terminal including a top with free access... Agent:
20150024591 - On-chip rf shields with backside redistribution lines: Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a... Agent:
20150024590 - Removing conductive material to form conductive features in a substrate: Apparatuses having, and methods for forming, conductive features are described. A hole is formed in a substrate and a conductive material is deposited in the hole. A part of the conductive material that occupies a first lengthwise portion of the hole is removed, and a conductive feature that occupies a... Agent:
20150024592 - Void free tungsten fill in different sized features: Methods of depositing tungsten in different sized features on a substrate are provided herein. The methods involve depositing a first bulk layer of tungsten in the features, etching the deposited tungsten, depositing a second bulk tungsten, which is interrupted to treat the tungsten after the smaller features are completely filled,... Agent:
20150024593 - Semiconductor device comprising capacitive element: A semiconductor device production method includes forming a transition metal film, irradiating a surface of the transition metal film with a mono-silane gas to form a silicon-containing transition metal film, and oxidizing the silicon-containing transition metal film by an oxygen plasma treatment, thereby forming a transition metal silicate film.... Agent:
20150024594 - Cooled pin lifter paddle for semiconductor substrate processing apparatus: A semiconductor substrate processing apparatus includes a cooled pin lifter paddle for raising and lowering a semiconductor substrate. The semiconductor substrate processing apparatus comprises a processing chamber in which the semiconductor substrate is processed, a heated pedestal for supporting the semiconductor substrate in the processing chamber, and the cooled pin... Agent: Lam Research Corporation
20150024596 - Abrasive, abrasive set, and method for abrading substrate: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.... Agent:
20150024595 - Compositions and methods for cmp of silicon oxide, silicon nitride, and polysilicon materials: The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a... Agent:
20150024598 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first... Agent:
20150024597 - Method for sidewall spacer line doubling using polymer brush material as a sacrificial layer: A method for sidewall spacer line doubling uses sacrificial sidewall spacers. A mandrel layer is deposited on a substrate and patterned into mandrel stripes with a pitch double that of the desired final line pitch. A functionalized polymer is deposited over the mandrel stripes and into the gaps between the... Agent: Hgst Netherlands B.v.
20150024599 - Plasma processing apparatus and plasma processing method: In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce... Agent:
20150024600 - Systems and methods to mitigate nitride precipitates: A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.... Agent:
20150024601 - Method of manufacturing si-based high-mobility group iii-v/ge channel cmos: A method can include: growing a Ge layer on a Si substrate; growing a low-temperature nucleation GaAs layer, a high-temperature GaAs layer, a semi-insulating InGaP layer and a GaAs cap layer sequentially on the Ge layer after a first annealing, forming a sample; polishing the sample's GaAs cap layer, and... Agent: Institute Of Semiconductors, Chinese Academy Of Sciences
20150024602 - Method for positioning spacers in pitch multiplication: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are... Agent:
20150024603 - Plasma etching method and plasma etching apparatus: In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O2, CF4 and HBr is used as an etching gas,... Agent: Tokyo Electron Limited
20150024604 - Method of etching a silicon substrate: A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in plasma, the method including introducing a rare gas into a reaction system to ionize the rare gas.... Agent:
20150024605 - Substrate processing method: A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on... Agent:
20150024606 - Method and system for thinning wafer thereof: Embodiments of a method for thinning a wafer are provided. The method includes placing a wafer on a support assembly and securing an etching mask to a backside of the wafer. The etching mask covers a peripheral portion of the wafer. The method further includes performing a wet etching process... Agent:
20150024607 - Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent: Organoaluminum coating compositions are used to deposit films on various substrates, which films are subsequently cured to form oxide films useful in a variety of manufacturing applications, particularly where a gas barrier may be used.... Agent:
20150024608 - Organoaminodisilane precursors and methods for depositing films comprising same: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or... Agent: Air Products And Chemicals, Inc.
20150024609 - Semiconductor reaction chamber with plasma capabilities: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method... Agent: AsmIPHolding B.v.01/15/2015 > 77 patent applications in 62 patent subcategories.
20150017743 - Memory devices and methods of fabricating the same: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit... Agent:
20150017742 - Methods for manufacturing a data storage device: Methods for manufacturing a data storage device are provided. A method may include forming an interlayer dielectric layer on a substrate, patterning the interlayer dielectric layer in a peripheral region of the substrate to form first trenches, forming first bit lines in the first trenches, patterning the interlayer dielectric layer... Agent:
20150017741 - Plasma etching method: In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film... Agent: Hitachi High-technologies Corporation
20150017744 - Method of removing particles from a display panel and apparatus for performing the same: A method of removing particles from a display panel is disclosed. In one aspect, the method includes charging the particles and applying an electric field to the charged particles to capture the charged particles. Organic particles and inorganic particles may be forcibly charged to capture the organic and inorganic particles... Agent: Samsung Display Co., Ltd.
20150017745 - Polishing method and polishing apparatus: A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion... Agent:
20150017746 - Methods of forming a semiconductor device: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on... Agent:
20150017747 - Method for forming a solar cell with a selective emitter: A method for producing a solar cell with a selective emitter is disclosed. A semiconductor substrate (1) is provided. A layer (3) of dopant source material with a dopant type opposite to the dopant type of the substrate (1) is formed at a surface of the substrate (1). By applying... Agent:
20150017748 - Apparatus and method for manufacturing led package: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state... Agent: Samsung Electronics Co., Ltd.
20150017749 - Flexible packaging substrate and fabricating method thereof and packaging method for oled using the same: Provided herein is a flexible packaging substrate, comprising a first polymer layer; a metal foil layer disposed on the first polymer layer; a second polymer layer disposed on the metal foil layer; and wherein the surface area of the metal foil layer is larger than those of both the first... Agent: Everdisplay Optronics (shanghai) Limited
20150017750 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second... Agent:
20150017751 - Method for manufacturing semiconductor device: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is... Agent:
20150017752 - Method of manufacturing organic light-emitting diode (oled) display: A method of manufacturing an organic light-emitting diode (OLED) display is disclosed. In one aspect, the method includes forming a color filter on a thin film transistor substrate, forming an organic planarization layer on the color filter, and performing a vacuum heat-treatment on the color filter and organic planarization layer.... Agent: Samsung Display Co., Ltd.
20150017753 - Thin film deposition apparatus and manufacturing method of organic light emitting diode display using the same: The example embodiments provide a thin film deposition apparatus for deposition of an organic material having a low volatility characteristic, and a method for manufacturing an OLED display using the same. A thin film deposition apparatus includes a crucible assembly evaporating an organic material toward a substrate, and a pattern... Agent: Samsung Display Co., Ltd.
20150017754 - Composition for forming n-type diffusion layer, method for producing semiconductor substrate having n-type diffusion layer, and method for producing solar cell element: The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element.... Agent:
20150017755 - Method for fabricating cu-in-ga-se film solar cell: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing... Agent:
20150017756 - Apparatus and method for producing cigs absorber layer in solar cells: A method of forming an absorber layer of a solar cell includes forming a plurality of precursor layers over a surface of a bottom electrode of a solar cell substrate. The step of forming includes depositing a first layer comprising selenium and copper and at least one of gallium or... Agent:
20150017757 - Apparatus and methods for forming thin film solar cell materials: A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage... Agent:
20150017758 - Systems, methods, and media for laser deposition: In accordance with some embodiments of the disclosed subject matter, mechanisms for pulsed laser deposition are provided. In some embodiments, a system for pulsed laser deposition is provided, the system comprising: a pulsed laser configured to project a pulsed laser beam at a rotating target material and cause metal clusters... Agent:
20150017760 - Method for manufacturing molecular memory device: According to one embodiment, a method for manufacturing a molecular memory device includes: forming a first wiring layer including a plurality of first wirings extending in a first direction; forming a sacrificial film on the first wiring layer; forming a plurality of core members on the first wiring layer, the... Agent: Kabushiki Kaisha Toshiba
20150017759 - Method for producing multiple-surface imposition vapor deposition mask, multiple-surface imposition vapor deposition mask obtained therefrom, and method for producing organic semiconductor element: A method for producing a multiple-surface imposition vapor deposition mask enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a... Agent:
20150017762 - Display device and method for manufacturing the same: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which... Agent:
20150017761 - Method for fabricating thin-film transistor: A method for fabricating a thin-film transistor is described. A structure is provided, including a substrate transmitting an excimer laser light, a diffusion prevention film on the substrate, a gate electrode and a gate insulating film on the diffusion prevention film, and an oxide semiconductor layer on the gate insulating... Agent:
20150017764 - Method of forming a semiconductor package: A method of forming a semiconductor package includes forming an interconnecting structure on an adhesive layer, wherein the adhesive layer is on a carrier. The method further includes placing a semiconductor die on a surface of the interconnecting structure. The method further includes placing a package structure on the surface... Agent:
20150017763 - Microelectronic assembly with thermally and electrically conductive underfill: A microelectronic assembly may include a microelectronic element having a surface and a plurality of contacts at the surface; a first element consisting essentially of at least one of semiconductor or dielectric material, the first element having a surface facing the surface of the microelectronic element and a plurality of... Agent: Invensas Corporation
20150017765 - Method for package-on-package assembly with wire bonds to encapsulation surface: A microelectronic assembly (10) includes a substrate (12) having a first and second opposed surfaces. A microelectronic element (22) overlies the first surface and first electrically conductive elements (28) can be exposed at at least one of the first surface or second surfaces. Some of the first conductive elements (28)... Agent: Invensas Corporation
20150017766 - Electronic device and method of manufacturing semiconductor device: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is... Agent: Sony Corporation
20150017767 - Method for producing a semiconductor device having sgts: In a method for producing a semiconductor device, Si pillars that include i-layers, N+ regions that serve as lower impurity regions, N+ regions and a P+ region that serve as upper impurity regions, and i-layers are formed by using SiO2 layers as an etching mask. Thus, surrounding gate MOS transistors... Agent:
20150017768 - Semiconductor device and method of forming the same: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions,... Agent:
20150017770 - 3-d non-volatile memory device and method of manufacturing the same: A three dimensional (3-D) non-volatile memory device includes a pipe gate including a first pipe gate, a second pipe gate formed on the first pipe gate, and a first interlayer insulating layer interposed between the first pipe gate and the second pipe gate, word lines alternately stacked with second interlayer... Agent: Sk Hynix Inc.
20150017771 - 3d non-volatile memory device and method of manufacturing the same: A 3D non-volatile memory device includes a pipe gate, at least one first channel layer including a first pipe channel layer formed in the pipe gate and a pair of first source side channel layer and first drain side channel layer connected to the first pipe channel layer, and at... Agent:
20150017769 - Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device: A vertical semiconductor device having a vertical channel region is disclosed. The vertical semiconductor device includes a pillar having a vertical channel region, a bit line buried in a semiconductor substrate located at a lower part of the pillar, and a body connection unit configured to couple at least one... Agent:
20150017772 - Method of doping a polycrystalline transistor channel for vertical nand devices: A method of doping the polycrystalline channel in a vertical FLASH device is disclosed. This method uses a plurality of high energy ion implants to dope the channel at various depths of the channel. In some embodiments, these ion implants are performed at an angle offset from the normal direction,... Agent:
20150017773 - Semiconductor device and method for manufacturing the same: In the semiconductor device, a line-type buried gate is formed by burying a non-operating gate (isolation gate) with a polysilicon material to reduce a work function and a Gate Induced Drain Leakage (GIDL) caused by the non-operating gate, resulting in improvement of refresh characteristics of the semiconductor device. Operating gates... Agent:
20150017775 - Device with a vertical gate structure: A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at... Agent:
20150017776 - Epitaxial growth of doped film for source and drain regions: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope... Agent:
20150017774 - Method of forming fins with recess shapes: Thermal oxidation treatment methods and processes used during fabrication of semiconductor devices are provided. One method includes, for instance: obtaining a device with at least one cavity etched into the device; performing a thermal oxidation treatment to the at least one cavity; and cleaning the at least one cavity. One... Agent:
20150017777 - Method of fabricating mos device: Provided is a method of fabricating a MOS device including the following steps. A gate structure is formed on a substrate and a first spacer is formed at a sidewall of the gate structure. A first implant process is performed to form source and drain extension regions in the substrate.... Agent:
20150017778 - Capacitor in post-passivation structures and methods of forming the same: A device includes a metal pad and a passivation layer having a portion overlapping the metal pad. A capacitor includes a bottom capacitor electrode underlying the passivation layer, wherein the bottom capacitor includes the metal pad. The capacitor further includes a top capacitor electrode over the portion of the passivation... Agent:
20150017779 - Semiconductor device having stacked storage nodes of capacitors in cell region separated from peripheral region: Methods of fabricating a semiconductor device are provided. The method includes forming a first mold layer on a in a cell region and a peripheral region, forming first storage nodes penetrating the first mold layer in the cell region and a first contact penetrating the first mold layer in the... Agent:
20150017780 - Nonvolatile resistive memory element with an integrated oxygen isolation structure: A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device... Agent:
20150017781 - Method of forming shallow trench isolation structure: A method of forming a shallow trench isolation structure is disclosed. Hard mask patterns are formed on a substrate. A portion of the substrate is removed, using the hard mask patterns as a mask, to form first trenches in the substrate, wherein a fin is disposed between the neighboring first... Agent:
20150017782 - Bonding device and bonding method: A bonding device for bonding substrates together, includes: a first holding unit configured to hold a first substrate on a lower surface thereof; a second holding unit located below the first holding unit and configured to hold a second substrate on an upper surface thereof; a moving mechanism configured to... Agent:
20150017783 - Method for manufacturing bonded soi wafer: The present invention is directed to a method for manufacturing an SOI wafer in which the bonded SOI wafer after the delamination by the ion implantation delamination method is subjected to a rapid thermal oxidation process such that an oxide film is formed on a surface of the SOI layer,... Agent:
20150017784 - Semiconductor processing apparatus using laser: Provided is a semiconductor processing apparatus, including a first laser beam irradiation unit having a first variable beam expanding telescope and a first galvanometer scanner transferring a first laser beam having a first wavelength, a second laser beam irradiation unit having a second variable beam expanding telescope and a second... Agent: Samsung Electronics Co., Ltd.
20150017785 - Method of forming salicide block with reduced defects: A method of forming a salicide block with reduced defects is disclosed, the method including performing an ultraviolet cure process on a silicon nitride layer deposited in a previous step. High-energy ultraviolet light used in the ultraviolet cure process breaks the hydrogen-containing chemical bonds such as silicon-hydrogen and nitrogen-hydrogen in... Agent: Shanghai Huali Microelectronics Corporation
20150017786 - Method for treating group iii nitride substrate and method for manufacturing epitaxial substrate: Provided is a method for treating a group III nitride substrate capable of obtaining, in the case where a group III nitride layer is laminated thereon, a group III nitride substrate that can form an electronic device having excellent characteristics. The method for treating a group III nitride substrate includes... Agent: Ngk Insulators, Ltd.
20150017787 - Method and apparatus to reduce contamination of particles in a fluidized bed reactor: A method and fluidized bed reactor for reducing or eliminating contamination of silicon-coated particles are disclosed. The metal surface of one or more fluidized bed reactor components is at least partially coated with a hard protective layer comprising a material having an ultimate tensile strength of at least 700 MPa... Agent:
20150017788 - Method for making silicon-germanium absorbers for thermal sensors: A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at... Agent:
20150017789 - Electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase... Agent: Sixpoint Materials, Inc.
20150017790 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes: preparing a Si substrate having a flat portion with flat front and back surfaces and a bevel portion located at a periphery of the flat portion; forming a III-V nitride semiconductor film on the front surface of the Si substrate by epitaxial... Agent: Mitsubishi Electric Corporation
20150017791 - Film-forming composition and ion implantation method: There is provided an ion implantation method, a composition for forming an ion implantation film and a resist underlayer film-forming composition. An ion implantation method including the steps of: forming a film by applying a film-forming composition containing a compound including an element in group 13, group 14, group 15,... Agent:
20150017792 - Method and system for diffusion and implantation in gallium nitride based devices: A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed... Agent:
20150017793 - Formation of localised molten regions in silicon containing multiple impurity types: A method for creating an inwardly extending impurity distribution profile in a substrate comprising crystalline silicon material having a background doping of a first impurity type, comprising: a) providing one or more additional impurity sources with at least two different types of impurity atoms within the substrate or in proximity... Agent: Newsouth Innovations Pty Limited
20150017794 - Methods for forming doped silicon oxide thin films: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor... Agent: Asm International. N.v.
20150017795 - Non-volatile memory with silicided bit line contacts: An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A further benefit of the... Agent:
20150017796 - Techniques providing metal gate deviceswith multiple barrier layers: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK... Agent:
20150017797 - Method of manufacturing semiconductor device including metal-containing conductive line: A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing... Agent:
20150017800 - Interconnect structure for semiconductor devices: A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface,... Agent:
20150017798 - Method of manufacturing through-silicon-via: A method of manufacturing through-silicon-via (TSV) including the steps of sequentially forming a liner layer and a metal layer in a TSV hole, performing a chemical mechanical polishing process to remove the metal layer on the substrate so that the remaining metal layer in the TSV hole becomes a TSV,... Agent:
20150017799 - Method of semiconductor integrated circuit fabrication: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A patterned dielectric layer with a plurality of openings is formed on the substrate. A barrier layer is deposited in the openings by a first tool and a sacrificing protection layer is deposited... Agent:
20150017801 - Semiconductor structure and method for making same: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a substrate; forming a dielectric layer over the substrate; forming a first opening and a second opening at least partially simultaneously through the dielectric layer over the substrate; and forming a third opening through the... Agent:
20150017802 - Double-etch nanowire process: In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a... Agent: Bandgap Engineering, Inc.
20150017803 - Customized alleviation of stresses generated by through-substrate via(s): Fabrication of through-substrate via (TSV) structures is facilitated by: forming at least one stress buffer within a substrate; forming a through-substrate via contact within the substrate, wherein the through-substrate via structure and the stress buffer(s) are disposed adjacent to or in contact with each other; and where the stress buffer(s)... Agent:
20150017804 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same: A method of forming a pattern in a semiconductor device is described. A substrate divided into cell and peripheral regions is provided, and an object layer is formed on a substrate. A buffer pattern is formed on the object layer in the cell region along a first direction. A spacer... Agent:
20150017805 - Wafer processing apparatus having independently rotatable wafer support and processing dish: An apparatus for processing a wafer is disclosed that includes a wafer support and a processing base. The wafer support is configured to support a wafer in a processing position, and to rotate the wafer about a first substantially vertical axis while in the processing position. The processing base includes... Agent:
20150017806 - Polishing agent, polishing agent set, and substrate polishing method: The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.... Agent:
20150017807 - Methods of forming patterns: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the... Agent:
20150017808 - Method of forming fine patterns of semiconductor device: A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light,... Agent:
20150017809 - Fluorocarbon based aspect-ratio independent etching: A method for etching features into an etch layer disposed below a patterned mask is provided. At least three cycles are provided, where each cycle comprises providing an ion bombardment, by creating a plasma, of the etch layer to create activated sites of surface radicals in parts of the etch... Agent:
20150017810 - Dual chamber plasma etcher with ion accelerator: The embodiments herein generally deal with semiconductor processing methods and apparatus. More specifically, the embodiments relate to methods and apparatus for etching a semiconductor substrate. A partially fabricated semiconductor substrate is provided in a reaction chamber. The reaction chamber is divided into an upper sub-chamber and a lower sub-chamber by... Agent:
20150017811 - Method for processing base body to be processed: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a)... Agent:
20150017812 - Sequential precursor dosing in an ald multi-station/batch reactor: Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second... Agent:
20150017813 - Semiconductor device manufacturing method and substrate treatment system: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or... Agent:
20150017814 - Method of forming gate oxide layer: A method of forming a gate oxide layer is disclosed, which introduces a rapid laser annealing process, performed on the surface of the gate SiON layer, prior to a high-temperature annealing process performed on the gate SiON layer. This enables the method of the invention to remove the intrinsic oxide... Agent: Shanghai Huali Microelectronics Corporation
20150017815 - Combinatorial non-contact wet processing: An apparatus and method for combinatorial non-contact wet processing of a liquid material may include a source of a liquid material, a first reaction cell, a second reaction cell, a first plurality of gas jets disposed within an interior of the first reaction cell, the first plurality of gas jets... Agent:
20150017817 - Laser processing apparatus and laser processing method: A laser processing apparatus includes a laser beam generating device that generates a first pulse laser beam for temporarily increasing a light absorptance in a predetermined region of a processing object, and a second pulse laser beam to be absorbed in the predetermined region in which the light absorptance has... Agent: Aisin Seiki Kabushiki Kaisha
20150017816 - Method for performing laser crystallization: A method for performing a laser crystallization is provided. The method includes generating a laser beam, refracting the laser beam to uniformize an intensity of the laser beam at a focal plane of the laser beam. The laser beam whose intensity is uniformized is applied into an object substrate mounted... Agent: Samsung Display Co., Ltd.01/08/2015 > 77 patent applications in 57 patent subcategories.
20150011021 - Method for forming biochips and biochips with non-organic landings for improved thermal budget: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support... Agent:
20150011024 - Analysis device, analysis method, film formation device, and film formation method: An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating... Agent: Fujitsu Limited
20150011022 - Methods of dividing layouts and methods of manufacturing semiconductor devices using the same: Target pattern layouts that include lower and upper target patterns are designed. Each lower target pattern is combined with a upper target pattern that at least partially overlaps a top surface thereof to form combination structures. The combination structures are divided into first and second combination structures. A first target... Agent: Samsung Electronics Co., Ltd.
20150011023 - Multiple-patterned semiconductor device: A multiple-patterned semiconductor device and a method of manufacture are provided. The semiconductor device includes a conductive layer. The conductive layer includes conductive tracks which may be defined by photomasks. The conductive tracks may have quality characteristics. Distinct quality characteristics of distinct conductive tracks may be compared. Based on the... Agent: International Business Machines Corporation
20150011025 - Enhanced selenium supply in copper indium gallium selenide processes: A system for depositing selenium on a substrate comprises includes a substrate carrier including a body, means for holding the substrate, and a plurality of selenium vapor outlets formed in the body to direct a flux of selenium vapor onto the substrate. A selenium supply container provides selenium vapor to... Agent:
20150011026 - Processing method, processing apparatus, lithography apparatus, and method of manufacturing article: The present invention provides a processing method of processing a first signal obtained by detecting an alignment mark including a plurality of mark elements to obtain a position of the alignment mark, the method including steps of performing filtering to the first signal to generate a second signal, and obtaining... Agent:
20150011027 - 3d nand staircase cd control by using interferometric endpoint detection: Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes... Agent:
20150011028 - Stack type semiconductor device and method of fabricating and testing the same: There are proposed a stack type semiconductor device and a method of fabricating and testing the same. A stack type semiconductor device according to an embodiment of the present invention includes a plurality of contact pads externally exposed, a via array electrically connected to the contact pads, a semiconductor substrate... Agent:
20150011029 - Network of semiconductor structures with fused insulator coating: Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a method of fabricating a semiconductor structure involves forming a mixture including a plurality of discrete semiconductor nanocrystals. Each of the plurality of discrete semiconductor... Agent:
20150011030 - Flexible organic light emitting display and method in an in-cell structure having a touch electrode array for manufacturing the same: Disclosed are an organic light emitting display that enables realization of a thin film shape and flexibility, and exhibits superior contact properties in touch pads based on an improved structure, and a method for manufacturing the same, wherein a distance between the outermost surface of the touch pad portion and... Agent: Lg Display Co., Ltd.
20150011031 - Method of manufacturing organic light emitting diode: Provided is a method of manufacturing an organic light emitting diode. The method of manufacturing an organic light emitting diode includes forming a light scattering layer on a substrate, forming a metal mask layer on the light scattering layer, forming a metal mask pattern by performing a heat treatment process... Agent: Electronics And Telecomunications Research Institute
20150011032 - Method for fabricating a liquid crystal display device comprising an alignment film that includes a photolytic polymer and a non-photolytic polymer: A method for fabricating a liquid crystal display device including a TFT substrate having an alignment film formed thereon, an opposing substrate, and a liquid crystal layer sandwiched therebetween. The alignment film on the TFT substrate includes a photolytic polymer made from a first precursor including cyclobutane, and a non-photolytic... Agent:
20150011034 - Display device: A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the... Agent:
20150011033 - Mask assembly and method of fabricating organic light emitting display device using the same: A mask assembly and a method of fabricating an organic light emitting display device using the same are provided. The mask assembly includes: a mask frame including a window therein; and a mask which is disposed on the window and fixed to the mask frame, wherein the mask includes a... Agent: Samsung Display Co., Ltd.
20150011035 - Method for fabricating an integrated device: A method for fabricating an integrated device includes the following steps. First, a multi-layered structure is formed on a substrate, wherein the multi-layered structure is embedded in a lower isolation layer. Then, a bottom conductive pattern and a top conductive pattern are formed on a top surface of the lower... Agent:
20150011036 - Method for manufacturing a solar cell: The invention relates to a method for manufacturing a solar cell from a semiconductor substrate of a first conductivity type, the semiconductor substrate having a front side and a back side, the method comprising in this sequence: creating by diffusion of a dopant of a second conductivity type a second... Agent:
20150011037 - Converter plate, a radiation-emitting device having such a converter plate and a method of producing such a converter plate: A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed.... Agent: Osram Opto Semiconductors Gmbh
20150011038 - Two-stage packaging method of image sensors: A two-stage packaging method of image sensors is disclosed. The packaging method includes the following steps: providing a substrate, fixing an image sensor chip on the substrate, fixing a transparent board on the image sensor chip, electrically connecting the image sensor chip and the substrate, forming a first encapsulant lay,... Agent: Kingpak Technology Inc.
20150011039 - Manufacture of solar cell module: A solar cell module is manufactured by forming silicone coating films (2, 2) on panels (1a, 1b), placing a solar cell matrix (3) on the silicone coating film on panel (1a), providing a seal member (4) consisting of a base seal member (4a) of butyl rubber and protrusive seal segments... Agent: Shin-etsu Chemical Co., Ltd.
20150011040 - Double layer interleaved p-n diode modulator: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface... Agent:
20150011041 - Photoelectric conversion device and method for manufacturing the same: A circuit layer is formed on a surface of a substrate and includes a transistor. A photoelectric conversion element includes a photoelectric conversion layer of a chalcopyrite-type semiconductor provided between a first electrode and a second electrode. A supply layer is formed between the circuit layer and the photoelectric conversion... Agent:
20150011042 - Method of making photovoltaic devices incorporating improved pnictide semiconductor films: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous... Agent:
20150011043 - Solar cell and method for manufacturing same: A solar cell is provided with: a semiconductor substrate; an insulating layer formed of a silicon compound or a metal compound, and having a predetermined pattern over the substrate; and a surface covering layer formed of an amorphous semiconductor, having a same pattern as the insulating layer, and that directly... Agent:
20150011044 - Composition for tin oxide semiconductor and method of formation of tin oxide semiconductor thin film: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a... Agent: Samsung Display Co., Ltd.
20150011047 - Method for fabricating igzo layer and tft: Methods for fabricating an IGZO layer and fabricating TFT are provided in the present invention. The method for fabricating TFT includes the following steps: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer; (2) coating the IGZO layer with a photoresist, and... Agent:
20150011045 - Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide: Provided are a method of forming an oxide thin film using hydrogen peroxide, and a method of fabricating an oxide thin film transistor using hydrogen peroxide. Embodiments of the present disclosure provide methods of forming an oxide film, including: mixing hydrogen peroxide with a precursor solution in which a precursor... Agent:
20150011049 - Semiconductor device and manufacturing method thereof: An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor... Agent:
20150011046 - Semiconductor device and method for manufacturing semiconductor device: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat... Agent:
20150011048 - Semiconductor device and method for manufacturing semiconductor device: To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as a transistor is miniaturized can be suppressed. The semiconductor device includes a first semiconductor film, a source electrode and a... Agent:
20150011050 - Bridge interconnect with air gap in package assembly: Embodiments of the present disclosure are directed towards techniques and configurations for a bridge interconnect assembly that can be embedded in a package assembly. In one embodiment, a package assembly includes a package substrate configured to route electrical signals between a first die and a second die and a bridge... Agent:
20150011051 - Package systems having interposers: A package system includes a first integrated circuit disposed over an interposer. The interposer includes at least one molding compound layer including a plurality of electrical connection structures through the at least one molding compound layer. A first interconnect structure is disposed over a first surface of the at least... Agent:
20150011052 - Pin attachment: A method for making a microelectronic package includes the steps of providing a microelectronic assembly that further includes a substrate with a plurality of conductive elements thereon, a carrier, and a plurality of substantially rigid metal elements extending from the carrier and joined to the conductive elements; and removing the... Agent:
20150011053 - Semiconductor device and method of assembling same: A semiconductor device has a die support and external leads formed integrally from a single sheet of electrically conductive material. A die mounting substrate is mounted on the die support, with bonding pads coupled to respective external connection pads on an external connector side of the substrate. A die is... Agent: Freescale Semiconductor, Inc.
20150011054 - Fabricating method of array structure: An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first... Agent:
20150011055 - Manufacturing method of low temperature poly-silicon tft array substrate: A manufacturing method of an LTPS-TFT array substrate is provided. The exemplary method comprises a step of sequentially forming a poly-silicon layer and a data-line-metal layer on a base substrate, and performing a patterning process by using a third mask to simultaneously form an active layer and source and drain... Agent:
20150011056 - Variation resistant mosfets with superior epitaxial properties: Variation resistant metal-oxide-semiconductor field effect transistors (MOSFET) are manufactured using a high-K, metal-gate ‘channel-last’ process. Between spacers formed over a well area having separate drain and source areas, a recess in the underlying is formed using a crystallographic etch to provide  boundaries adjacent the source and drain regions. An... Agent:
20150011058 - Method of manufacturing hemts with an integrated schottky diode: An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound semiconductor material with a channel region interposed between the source and drain regions. A Schottky diode is integrated with... Agent:
20150011057 - Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits: A method for forming an enhancement mode GaN HFET device with an isolation area that is self-aligned to a contact opening or metal mask window. Advantageously, the method does not require a dedicated isolation mask and the associated process steps, thus reducing manufacturing costs. The method includes providing an EPI... Agent:
20150011059 - High-k metal gate devices with a dual work function and methods for making the same: A layer of P-metal material having a work function of about 4.3 or 4.4 eV or less is formed over a high-k dielectric layer. Portions of the N-metal layer are converted to P-metal materials by introducing additives such as O, C, N, Si or others to produce a P-metal material... Agent:
20150011060 - Dual epi cmos integration for planar substrates: Silicon germanium regions are formed adjacent gates electrodes over both n-type and p-type regions in an integrated circuit. A hard mask patterned by lithography then protects structures over the p-type region while the silicon germanium is selectively removed from over the n-type region, even under remnants of the hard mask... Agent:
20150011061 - Complementary stress memorization technique layer method: A process of forming a CMOS integrated circuit by forming a first stressor layer over two MOS transistors of opposite polarity, removing a portion of the first stressor layer from the first transistor, and forming a second stressor layer over the two transistors. A source/drain anneal is performed, crystallizing amorphous... Agent:
20150011062 - Three dimensional floating gate nand memory: Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate;... Agent: Seagate Technology LLC
20150011063 - Methods of fabricating semiconductor structures: Semiconductor structures including an etch stop material between a substrate and a stack of alternating insulating materials and first conductive materials, wherein the etch stop material comprises an amorphous aluminum oxide on the substrate and a crystalline aluminum oxide on the amorphous aluminum oxide; a channel material extending through the... Agent:
20150011064 - Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions... Agent:
20150011065 - Semiconductor device and method for manufacturing the same: A semiconductor device including a drain region of a first conductivity type formed on a semiconductor substrate; an element forming region that is provided on the drain region and that has a concave portion reaching the drain region; a gate electrode disposed in the concave portion; a superjunction structure portion... Agent: Rohm Co., Ltd.
20150011066 - Semiconductor device with vertical gate and method of manufacturing the same: A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the... Agent:
20150011067 - Flatband shift for improved transistor performance: An integrated circuit includes MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. An integrated circuit includes MOS and LDMOS transistors with at least one of... Agent:
20150011068 - Finfet device having a channel defined in a diamond-like shape semiconductor structure: The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of... Agent:
20150011069 - Method for manufacturing p-type mosfet: A method for manufacturing a PMOSFET including defining an active region for the PMOSFET on a semiconductor substrate; forming an interfacial oxide layer on a surface of the substrate; forming a high-K gate dielectric layer on the interfacial oxide layer; forming a metal gate layer on the dielectric layer; implanting... Agent:
20150011070 - Method for fabricating semiconductor device: A gate pattern is formed on a first region of a substrate. An epitaxial layer is formed on a second region of the substrate. A recess is formed in the second region of the substrate by etching the epitaxial layer and the substrate underneath. The first region is adjacent to... Agent:
20150011071 - Diffusion barrier layer for resistive random access memory cells: Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The... Agent:
20150011072 - Capping coating for 3d integration applications: A structure for a semiconductor component is provided having a bi-layer capping coating integrated and built on supporting layer to be transferred. The bi-layer capping protects the layer to be transferred from possible degradation resulting from the attachment and removal processes of the carrier assembly used for layer transfer. A... Agent:
20150011073 - Laser scribing and plasma etch for high die break strength and smooth sidewall: In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then... Agent:
20150011074 - Methods of fabricating semiconductor devices having wrapping layer: A method of fabricating a semiconductor device includes providing a substrate having first areas and second areas, forming first metal wires on the first areas of the substrate, forming second metal wires on the second areas of the substrate, forming an interlayer insulation layer to cover the first and second... Agent:
20150011076 - Reactor gas panel common exhaust: A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel.... Agent:
20150011075 - Vacuum deposition apparatus and method using the same: A vacuum deposition apparatus includes a vacuum deposition device, a mask, a vacuum chamber and a controlling unit. The vacuum deposition device deposits a thin film layer on a substrate. The mask is disposed between the substrate and the vacuum deposition device, and the thin film layer is selectively deposited... Agent:
20150011077 - Vapor phase growth apparatus and vapor phase growth method: A vapor phase growth apparatus of an embodiment includes: a reaction chamber configured to perform a film formation process of nitride; a first gas supply path configured to supply a halogen-based gas; a second gas supply path configured to supply an ammonia gas; a shower plate disposed at the upper... Agent:
20150011078 - Mask for forming semiconductor pattern, patterning system with the same, and method of fabricating semiconductor device using the same: A mask for forming a semiconductor pattern includes a first body portion provided with a first through hole for injecting a semiconductor material and a second body portion provided with a second through hole for exhausting a gas. As the result of the gas suction through the second through hole,... Agent: Samsung Display Co., Ltd.
20150011079 - Method for manufacturing silicon epitaxial wafer: The present invention provides a method for manufacturing a silicon epitaxial wafer, characterized in that a silicon epitaxial layer is formed on an N-type silicon single crystal wafer manufactured by doping with arsenic to set a resistivity to 1.0 to 1.7 mΩcm and further doping with carbon, nitrogen, or both... Agent:
20150011080 - Method for electrical activation of dopant species in a gan film: The method includes the steps of a) Providing a stack having a support substrate and a film of GaN having dopant species, b) Directly bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the film of GaN, so as to form an activation structure,... Agent:
20150011081 - Method of fabricating semiconductor device: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate... Agent:
20150011082 - Conductive structure and method for forming the same: A conductive structure for a semiconductor chip and a method for forming the conductive structure are provided. The semiconductor chip comprises a semiconductor substrate, a pad, a passivation layer and a patterned insulating layer. The patterned insulating layer is disposed on the passivation layer and partially and directly covers the... Agent:
20150011083 - Through-vias and methods of forming the same: An integrated circuit structure includes a substrate, a metal ring penetrating through the substrate, a dielectric region encircled by the metal ring, and a through-via penetrating through the dielectric region. The dielectric region is in contact with the through-via and the metal ring.... Agent:
20150011084 - Method of making interconnect structure: A method of making a semiconductor device including forming a first adhesion layer over a substrate. The method further includes forming a second adhesion layer over the first adhesion layer, where the second adhesion layer is formed using an inert gas with a first flow rate under a first RF... Agent:
20150011085 - Method for forming fine pitch structures: A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open and an opposite end has a sidewall that acts as a seed sidewall. A first... Agent:
20150011086 - Novel conductor layout technique to reduce stress-induced void formations: A semiconductor device is prepared by an annealing process to interconnect at least two components of the device by a conductor line surrounded by an insulator material. The annealing process results in formation of residual stresses within the conductor line and the insulator material. One or multiple notches are designed... Agent:
20150011087 - Method of depositing film: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process... Agent: Tokyo Electron Limited
20150011088 - Methods and apparatus for depositing and/or etching material on a substrate: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to... Agent:
20150011089 - Pattern formation method: According to one embodiment, a pattern formation method includes forming a layer above an underlying layer. The layer includes a block copolymer. The method further includes forming a first phase including a first polymer and a second phase including a second polymer in the layer by phase-separating the block copolymer,... Agent:
20150011090 - Fin-shaped structure forming process: A fin-shaped structure forming process includes the following step. A first mandrel and a second mandrel are formed on a substrate. A first spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The exposed first spacer material is etched to form a first... Agent:
20150011092 - Resist underlayer film-forming composition containing copolymer resin having heterocyclic ring: In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming... Agent: Nissan Chemical Industries, Ltd.
20150011091 - Substrate processing method and control apparatus: Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus... Agent:
20150011093 - Ion beam etching system: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in... Agent:
20150011094 - Manufacturing method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus: A manufacturing method of a semiconductor manufacturing apparatus is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly stacked on a substrate, and forming a hole with a predetermined shape in the multilayer film. The manufacturing method includes a first... Agent:
20150011095 - Chemical deposition apparatus having conductance control: A chemical deposition apparatus having conductance control, which includes a showerhead module having a faceplate and a backing plate, the showerhead module including a plurality of inlets which deliver reactor chemistries to a cavity and exhaust outlets which remove reactor chemistries, a pedestal module configured to support a substrate and... Agent:
20150011096 - Deposition apparatus including an isothermal processing zone: A deposition apparatus for processing semiconductor substrates having an isothermal processing zone comprises a chemical isolation chamber in which semiconductor substrates are processed. A process gas source is in fluid communication with a showerhead module which delivers process gases from the process gas source to the isothermal processing zone wherein... Agent: Lam Research Corporation
20150011097 - Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and... Agent:01/01/2015 > 91 patent applications in 72 patent subcategories.
20150004718 - Methods of fabricating an f-ram: Non-volatile memory cells including complimentary metal-oxide-semiconductor transistors and embedded ferroelectric capacitor and methods of forming the same are described. In one embodiment, the method includes forming on a surface of a substrate a gate level including a gate stack of a MOS transistor, a first dielectric layer overlying the MOS... Agent: Cypress Semiconductor Corporation
20150004719 - Dispensing apparatus and dispensing method: A dispensing apparatus includes a dispensing unit having a main body, a channel through the main body, and a plurality of nozzles connected to the main body, the plurality of nozzles being configured to dispense fluid flowing in the channel, a gap sensor unit configured to determine size of gaps... Agent:
20150004720 - System and method for dispensing liquid spin-on glass (sog) onto semiconductor wafers: A device and method for dispensing liquid spin-on glass (SOG) onto semiconductor wafers. The method includes dispensing liquid SOG through a dispenser nozzle, detecting liquid SOG outside of the dispenser nozzle, indicating the presence of liquid SOG in an abnormal length relative to the dispenser nozzle and adjusting a suck... Agent:
20150004721 - Plasma processing apparatus and plasma processing method: An OES measuring unit outputs a spectroscopically measured value for each step at the end of or immediately after each step. A CD estimating unit obtains an estimated CD value for each step using a CD estimation model and a spectroscopically measured value received from an estimation model storage unit.... Agent: Tokyo Electron Limited
20150004722 - Method for fabricating light-emitting element and light-emitting element: A light-emitting element and its fabrication method are provided. The light-emitting element includes an EL layer between a pair of electrode, and the EL layer is formed by evaporation of an organic compound. The evaporation is conducted so that the partial pressure of a component with a specific molecular weight... Agent: Semiconductor Energy Laboratory Co., Ltd.
20150004723 - Method of inspecting misalignment of polysilicon gate: A method of inspecting misalignment of a polysilicon gate is disclosed, characterized in forming only NMOS devices in P-wells in a test wafer and utilizing an advanced electron beam inspection tool operating with a positive mode to carry out electrical defect inspection. The method can be applied in precisely figuring... Agent: Shanghai Huali Microelectronics Corporation
20150004724 - Method of manufacturing liquid discharge head: A method of manufacturing a liquid discharge head includes: forming a first hole which penetrates through a wafer and becomes at least part of a liquid supply port and a second hole which does not penetrate through the wafer and becomes at least part of a cut-off portion from a... Agent: Canon Kabushiki Kaisha
20150004727 - Led package and method of the same: A method of LED package includes: forming a P-type through-hole and a N-type through-hole through a substrate; forming a conductive material on the sidewall of said P-type through-hole and N-type through-hole; forming a reflective layer on an upper surface of said substrate; aligning a P-type pad and a N-type pad... Agent:
20150004726 - Manufacturing method for light-emitting device: A light-emitting device production method includes a positioning step of positioning, in a light-emitting element, a sealing member at least containing a silicone resin semi-cured at a room temperature (T0) by primary cross-linking and a fluorescent material, the silicone resin decreasing in viscosity reversibly in a temperature region between the... Agent: Sharp Kabushiki Kaisha
20150004725 - Methods for manufacturing light emitting diode and light emitting device: The present invention provides manufacturing methods of an LED and a light emitting device. The manufacturing method of the LED includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a lens structure covering the second electrode; coating the lens structure with fluorescent... Agent:
20150004728 - Led device manufacturing method and fluorescent material-dispersed solution used in same: The present invention addresses the problem of providing an LED device having no color unevenness in light emission. In order to solve the problem, this LED device manufacturing method includes: a step of providing an LED chip-mounted package; a step of film-forming a fluorescent material layer by applying a fluorescent... Agent:
20150004729 - Light emitting devices with built-in chromaticity conversion and methods of manufacturing: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the... Agent:
20150004730 - Organic light-emitting display device and method of manufacturing the same: The organic light-emitting display device includes: a substrate including a transistor region; and a thin-film transistor formed over the transistor region of the substrate and having a planarization film which is disposed over a source/drain electrode and a pixel defining layer which includes an aperture exposing a portion of a... Agent:
20150004731 - Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and electronic device using the anthracene derivative: Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting element that is capable of operation for a long time; and... Agent:
20150004732 - Method of fabricating integrated structure for mems device and semiconductor device: A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region... Agent:
20150004733 - Exfoliation of thermoelectric materials and transition metal dichalcogenides using ionic liquids: Disclosed are methods of exfoliating a thermoelectric material, such as bismuth telluride or antimony telluride, using one or more ionic liquids. Also disclosed is the exfoliated thermoelectric material provided by the disclosed methods. Further disclosed are compositions comprising the exfoliated thermoelectric material and methods of making and using the compositions.... Agent:
20150004734 - Nozzle assembly and method for fabricating a solar cell: A method for fabricating a solar cell using a nozzle assembly that includes a base portion, a scriber coupled to the base portion, and a nozzle coupled to the base portion such that the nozzle is positioned a predefined distance from a tip of the scriber is provided. The method... Agent:
20150004735 - Method for manufacturing large-area organic solar cells: A method for manufacturing large-area organic solar cells utilizes a hot solvent vapor annealing manufacturing process while manufacturing the organic solar cells via a large-area proceeding method, such as spraying. Namely, a heated solvent vapor is utilized to modify an active layer after the active layer of the organic solar... Agent: Atomic Energy Council-institute Of Nuclear Energy Research
20150004736 - Method of manufacturing light-absorbing layer having semiconductor nanoparticles and method of manufacturing semiconductor device having the same light-absorbing layer: An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to... Agent: Snu R&db Foundation
20150004739 - Method for embedding controlled-cavity mems package in integration board: A method for fabricating a micro-electro-mechanical system (MEMS) provides a semiconductor chip having a cavity with a radiation sensor MEMS. The opening of the cavity at the chip surface is covered by a plate transmissive to the radiation sensed by the MEMS. A patterned metal film is placed across the... Agent:
20150004738 - Method of manufacturing semiconductor device: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the... Agent:
20150004737 - Photovoltaic cell and laminate metallization: A photovoltaic laminate is disclosed. Embodiments include placing a first encapsulant on a substantially transparent layer that includes a front side of a photovoltaic laminate. Embodiments also include placing a first solar cell on the first encapsulant. Embodiments include placing a metal foil on the first solar cell, where the... Agent: Sunpower Corporation
20150004740 - Silicon solar cell module using conductive npaste as electrode and method for manufacturing same: The present invention relates to a silicon solar cell module comprising electrodes formed from conductive paste. In the invention, front electrode finger lines and front electrode bus bars are separately formed. The front electrode finger lines are formed by printing a silver paste and calcining the printed silver paste at... Agent: Gens Engineering Co. Ltd
20150004741 - Wafer separation method, wafer separation and transfer method, and solar cell wafer separation and transfer method: A wafer separation apparatus improves wafer separation performance in separation and transfer and suppresses the occurrence of wafer breakage in separation and transfer, while remaining inexpensive and small. The apparatus includes: a cassette that vertically accommodates a large number of single wafers in intimate contact with each other, the cassette... Agent:
20150004742 - Solar cell and fabrication method thereof: A fabrication method of a solar cell, the method includes doping a silicon substrate having a first conductive type impurity with a second conductive type impurity, the second conductive type impurity being opposite to the first conductive type impurity, and thereby forming an emitter layer at a front surface part... Agent: Lg Electronics Inc.
20150004743 - Method of manufacturing a photovoltaic device: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor... Agent:
20150004744 - Formation of metal structures in solar cells: A metal contact of a solar cell is formed by electroplating copper using an electroplating seed that is formed on a dielectric layer. The electroplating seed includes an aluminum layer that connects to a diffusion region of the solar cell through a contact hole in the dielectric layer. A nickel... Agent:
20150004747 - Reram device structure: A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer... Agent:
20150004746 - Semiconductor device and manufacturing method thereof: An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor... Agent:
20150004745 - Semiconductor device and method for manufacturing the same: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation... Agent:
20150004748 - Methods of forming conductive jumper traces: Methods of forming conductive jumper traces for semiconductor devices and packages. Substrate is provided having first, second and third trace lines formed thereon, where the first trace line is between the second and third trace lines. The first trace line can be isolated with a covering layer. A conductive layer... Agent:
20150004749 - Electrical leakage reduction in stacked integrated circuits having through-silicon-via (tsv) structures: The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield... Agent:
20150004751 - Dummy flip chip bumps for reducing stress: A device includes a metal pad over a substrate. A passivation layer includes a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI comprises a portion over the metal pad and the passivation layer. A polymer layer is over the... Agent:
20150004750 - Methods of forming conductive materials on contact pads: Methods of forming conductive materials on contact pads for semiconductor devices and packages. Substrate is provided with contact pads formed thereon. Conductive material is formed over the contact pads by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing... Agent:
20150004755 - Method of manufacturing a semiconductor device: A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing... Agent:
20150004754 - Semiconductor chips having improved solidity, semiconductor packages including the same and methods of fabricating the same: Semiconductor chips are provided. The semiconductor chip includes a semiconductor chip body having an arch-shaped groove in a backside thereof and a non-conductive material pattern filling the arch-shaped groove. Related methods are also provided.... Agent:
20150004753 - Semiconductor package and manufacturing method thereof: There are provided a semiconductor package including an electromagnetic shielding structure having excellent electromagnetic interference (EMI) and electromagnetic susceptibility (EMS) characteristics, while protecting individual elements in an inner portion thereof from impacts, and a manufacturing method thereof. The semiconductor package includes: a substrate having ground electrodes formed on an upper... Agent:
20150004752 - Semiconductor package, semiconductor substrate, semiconductor structure and fabrication method thereof: A semiconductor package is disclosed, which includes: a packaging substrate; a semiconductor element disposed on the packaging substrate in a flip-chip manner; a stopping portion formed at edges of the semiconductor element; an insulating layer formed on an active surface of the semiconductor element and the stopping portion; and an... Agent: Siliconware Precision Industries Co., Ltd.
20150004756 - Methods of forming conductive and insulating layers: Methods of forming conductive and insulating layers for semiconductor devices and packages. Substrate is provided with integrated circuit device and interconnect structure mounted thereon, the interconnect structure adjacent the integrated circuit device. The integrated circuit device and portions of the interconnect structure can be covered with an encapsulation exposing a... Agent:
20150004757 - Semiconductor device and method for manufacturing same: A silicon carbide substrate includes: an n type drift layer having a first surface and a second surface opposite to each other; a p type body region provided in the first surface of the n type drift layer; and an n type emitter region provided on the p type body... Agent:
20150004758 - Etchant, method of manufacturing metal wiring and thin film transistor substrate using the etchant: An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight %... Agent: Samsung Display Co., Ltd.
20150004759 - Thin-film-transistor array substrate and manufacturing method thereof: The present invention discloses a thin-film-transistor array substrate and a manufacturing method thereof. The array substrate includes a thin-film transistor and a compensation electrode. A gate electrode of the thin-film transistor is a portion of a scan-signal line and has an opening, and the opening extends to a side of... Agent:
20150004760 - Manufacturing method of liquid crystal display having touch sensor: A method of manufacturing a liquid crystal display having a touch sensor, the method including forming a plurality of thin film transistors on a first substrate, forming a plurality of pixel electrodes each coupled to a corresponding one of the thin film transistors, forming an insulating layer on the pixel... Agent: Samsung Display Co., Ltd.
20150004761 - Method of fabricating thin film transistor array substrate: A thin film transistor array substrate includes a substrate, a plurality of poly-silicon islands and a plurality of gates. The substrate has a display region, a gate driver region and a source driver region. Each poly-silicon island disposed on the substrate has a source region, a drain region and a... Agent:
20150004762 - Method for producing functional device and apparatus for producing functional device: According to the present invention, a method of producing a functional device includes the imprinting step and the functional solid material layer formation step. In the imprinting step, a functional solid material precursor layer obtained from a functional solid material precursor solution as a start material is imprinted so that... Agent:
20150004763 - 3d nand flash memory: A memory device includes an array of NAND strings of memory cells. The device includes a plurality of stacks of conductive strips separated by insulating material, including at least a bottom plane of conductive strips, a plurality of intermediate planes of conductive strips, and a top plane of conductive strips.... Agent: Macronix International Co., Ltd.
20150004764 - Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate: Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor... Agent:
20150004765 - Carbon-doped cap for a raised active semiconductor region: After formation of a disposable gate structure, a raised active semiconductor region includes a vertical stack, from bottom to top, of an electrical-dopant-doped semiconductor material portion and a carbon-doped semiconductor material portion. A planarization dielectric layer is deposited over the raised active semiconductor region, and the disposable gate structure is... Agent:
20150004766 - Manufacturing method of non-planar fet: The present invention provides a non-planar FET which includes a substrate, a fin structure, a sub spacer, a gate, a dielectric layer and a source/drain region. The fin structure is disposed on the substrate. The sub spacer is disposed only on a middle sidewall of the fin structure. The gate... Agent:
20150004767 - Method of forming nickel salicide on a silicon-germanium layer: A method of forming nickel self-aligned silicide (Ni-salicide) is disclosed, the method including the following steps in the sequence set forth: providing a substrate; forming a gate on the substrate and forming a SiGe source and a SiGe drain beneath a surface of the substrate; growing a silicon epitaxial layer... Agent: Shanghai Huali Microelectronics Corporation
20150004768 - Drain-end drift diminution in semiconductor devices: A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The... Agent: Freescale Semiconductor, Inc.
20150004769 - Method of semiconductor integrated circuit fabrication: A method of fabricating a semiconductor device is disclosed. A substrate with protrusion structures is provided. A patterned photoresist layer is formed over the substrate, including the protrusion structures. An ion-implantation is applied to the substrate, including to the patterned photoresist layer and an outer portion of the patterned photoresist... Agent:
20150004770 - Method of fabricating a vertically oriented inductor within interconnect structures and capacitor structure thereof: The present disclosure involves a method of fabricating a semiconductor device. The method includes providing a substrate having a horizontal surface. The method includes forming an interconnect structure over the horizontal surface of the substrate. The forming the interconnect structure includes forming an inductor coil that is wound substantially in... Agent:
20150004771 - Semiconductor device including capacitor and double-layer metal contact and fabrication method thereof: Disclosed are a semiconductor device comprising a capacitor and a double-layer metal contact and a method fabricating the same. The method comprising: forming a gate of a peripheral transistor for a peripheral circuit; forming a first contact and a first peripheral circuit wiring layer pattern on a first interlayer insulating... Agent:
20150004772 - Finfet fin bending reduction: An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, the first wet anneal removing impurities from the isolation region; a second wet anneal, the... Agent:
20150004773 - Method for forming shallow trench isolation: A method for forming shallow trench isolation (STI) structures includes using a hard mask, such as silicon nitride, in shallow trench etching and also as a polishing stop layer in planarizing the dielectric that fills the trenches. After the shallow trench is filled with the dielectric material and planarized, a... Agent: Semiconductor Manufacturing International (shanghai) Corporation
20150004774 - Methods of fabricating a semiconductor device including fine patterns: Methods of fabricating a semiconductor device are provided. The method includes forming active lines in a semiconductor substrate, forming contact lines generally crossing over the active lines, forming line-shaped etch mask patterns generally crossing over the active lines and the contact lines, etching the contact lines exposed by the line-shaped... Agent:
20150004775 - Semiconductor nanocrystals, methods for preparing semiconductor nanocrystals, and products including same: Disclosed is a method for preparing a semiconductor nanocrystal, comprising: forming a reaction mixture comprising injecting one or more first semiconductor nanocrystal precursors including one or more Group V elements and one or more Group VI elements into a mixture including one or more second semiconductor nanocrystal precursors including one... Agent:
20150004776 - Polysilicon layer preparing method: The present disclosure discloses a method of preparing the polysilicon layer, wherein by the depositions of the amorphous silicon thin film in batches for many times and the implementation of the excimer laser process after each deposition, it can not only convert the amorphous silicon thin film into the polysilicon... Agent:
20150004777 - Methods of forming vertical cell semiconductor devices with single-crystalline channel structures: Methods of fabricating a vertical cell semiconductor device including forming a hole passing through a stacked structure of alternating insulating and sacrificial layers on a substrate, forming an amorphous silicon layer conforming to an inner wall of the hole, forming a silicon region on the amorphous silicon layer, and metal... Agent:
20150004778 - High linearity soi wafer for low-distortion circuit applications: According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited... Agent:
20150004780 - Metal gate structure and fabrication method thereof: A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located... Agent:
20150004779 - Structure and method for nfet with high k metal gate: The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; a n-type filed effect transistor (nFET) formed on the semiconductor substrate and having a first gate stack including a high k dielectric layer, a capping layer on the high k dielectric layer, a p work function... Agent:
20150004781 - Forming beol line fuse structure: In one embodiment, the invention provides a back-end-of-line (BEOL) line fuse structure. The BEOL line fuse structure includes: a line including a plurality of grains of conductive crystalline material; wherein the plurality of grains in a region between the first end and a second end include an average grain size... Agent:
20150004782 - Semiconductor device and method of manufacturing the same: A semiconductor device in which misalignment does not cause short-circuiting and inter-wiring capacitance is decreased. Plural wirings are provided in a first interlayer insulating layer. An air gap is made between at least one pair of wirings in the layer. A second interlayer insulating layer lies over the wirings and... Agent: Renesas Electronics Corporatiom
20150004784 - Copper wiring forming method: Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as... Agent:
20150004783 - Method for fabricating semiconductor device: A method for making a semiconductor device includes forming a trench in a first layer on a substrate. A conductive layer having a pattern is formed in the trench. A first metal gate electrode is formed on the conductive layer, and a second metal gate electrode is formed on the... Agent: Samsung Electronics Co., Ltd.
20150004785 - Self-aligned patterning technique for semiconductor device features: A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process. The substrate includes sidewalls adjacent to the parallel first trenches. Forming first spacers adjacent to the sidewalls. Removing the sidewalls, which... Agent:
20150004786 - Integrated circuit fabrication: A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature... Agent:
20150004787 - Sapphire pad conditioner: A sapphire pad conditioner includes a sapphire substrate having multiple protrusions on a surface and a holder arranged to hold the sapphire substrate. The sapphire substrate is used for conditioning a chemical mechanical planarization (CMP) pad.... Agent:
20150004788 - Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry... Agent:
20150004790 - Photocured product and method for producing the same: It is intended to provide a photocured product that is prepared using the photo-imprint method and has favorable pattern precision and improvement in pattern defects. The present invention provides a photocured product obtained by irradiating a coating film in contact with a mold with light, the photocured product containing a... Agent:
20150004789 - Semiconductor manufacturing apparatus and method: In one embodiment, a semiconductor manufacturing apparatus includes a chamber configured to house a wafer, and a heater stage configured to support and heat the wafer in the chamber. The apparatus further includes a plasma tube connected to the chamber, and in which plasma is generated, and a coil wound... Agent: Kabushiki Kaisha Toshiba
20150004791 - Composition for forming a coating type bpsg film, substrate formed a film by said composition, and patterning process using said composition: The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as... Agent:
20150004792 - Method for treating wafer: A method for treating a wafer is provided. The method includes at least the following steps. A plasma process is performed on a front surface of the wafer, and the wafer is cleaned. The wafer is cleaned by applying deionized water with dissolved CO2 to the front surface of the... Agent:
20150004793 - Plasma processing chamber with dual axial gas injection and exhaust: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in... Agent:
20150004794 - Method of controlling temperature and plasma processing apparatus: A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. The electrostatic chuck is controlled to have a first temperature. The temperature of... Agent:
20150004795 - Plasma etching method and plasma etching apparatus: A groove shape can be improved. A plasma etching method includes plasma-processing a photoresist film that is formed on a mask film and has a preset pattern; exposing an organic film formed under the mask film by etching the mask film with the pattern of the plasma-processed photoresist film; and... Agent:
20150004796 - Methods for forming three dimensional nand structures atop a substrate: In some embodiments, a method of forming a three dimensional NAND structure atop a substrate may include providing to a process chamber a substrate having alternating nitride layers and oxide layers or alternating polycrystalline silicon layers and oxide layers formed atop the substrate and a photoresist layer formed atop the... Agent:
20150004797 - Method of stripping organic mask with reduced damage to low-k film: A method for stripping an organic mask above a porous low-k dielectric film is provided. A steady state flow of a stripping gas, comprising CO2 and CH4 is provided. The stripping gas is formed into a plasma, wherein the plasma strips at least half the organic mask and protects the... Agent:
20150004798 - Chemical deposition chamber having gas seal: A system for sealing a processing zone in a chemical deposition apparatus is disclosed, which includes a chemical isolation chamber having a deposition chamber formed within the chemical isolation chamber; a showerhead module having a faceplate, the showerhead module including a plurality of inlets which deliver reactor chemistries to a... Agent:
20150004799 - Machining process for semiconductor wafer: A resin application and grinding step is repeatedly carried out, the step including determining as a reference surface a flat surface obtained by applying a curable material to one entire surface of a wafer sliced out from a semiconductor single crystal ingot with the use of a wire saw apparatus... Agent:
20150004800 - Self-aligned patterning technique for semiconductor device features: A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process. The substrate includes sidewalls adjacent to the parallel first trenches. Forming first spacers adjacent to the sidewalls. Removing the sidewalls, which... Agent: International Business Machines Corporation
20150004802 - Methods and structures for protecting one area while processing another area on a chip: Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a... Agent:
20150004801 - Spin-on compositions of soluble metal oxide carboxylates and methods of their use: The present disclosure relates to spin-on compositions containing at least one metal oxide dicarboxylate and an organic solvent into which the metal oxide dicarboxylate is soluble or colloidally stable. The dicarboxylate is capable of decomposing during heat treatment to give a cured metal oxide film. The present disclosure also relates... Agent: Az Electronic Materials (luxembourg) S.a.r.l.
20150004803 - Method for forming tin and storage medium: When forming a TiN film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step... Agent:
20150004804 - Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium: A thin film having a low dielectric constant and a high resistance to HF at a low temperature range is formed with high productivity. A film containing a predetermined element, oxygen and at least one of carbon and nitrogen is formed on a substrate by performing, a predetermined number of... Agent:
20150004805 - Methods of forming silicon-containing dielectric materials and semiconductor device structures, and related semiconductor device structures: A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are... Agent:
20150004806 - Low-k oxide deposition by hydrolysis and condensation: Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. Halogen-free precursors and catalysts include self-catalyzing aminosilane compounds and halogen-free organic acids. Flowable films may be used to fill pores in existing dielectric films on substrates having exposed metallization layers. The methods involve... Agent:
20150004807 - Drawing apparatus, and method of manufacturing article: A drawing apparatus for performing drawing on a substrate with a charged particle beam, includes: a controller configured to control a dose of the charge particle beam at each of a plurality of positions of the charged particle beam on the substrate based on information of displacement of each of... Agent:
20150004808 - Systems and methods for processing thin films: The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser beam pulses generated by a laser source system are split into first laser beam pulses and second laser beam pulses,... Agent: The Trustees Of Columbia University In The City Of New YorkPrevious industry: Chemistry: analytical and immunological testing
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