|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 12/12/2013 > 96 patent applications in 67 patent subcategories.
20130330844 - Laser annealing systems and methods with ultra-short dwell times: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing... Agent: Ultratech, Inc.
20130330843 - Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure: A method of forming a semiconductor device is disclosed. The method includes: forming a dielectric region on a substrate; annealing the dielectric region in an environment including ammonia (NH3); monitoring a nitrogen peak of at least one of the substrate and the dielectric region during the annealing; and adjusting a... Agent: International Business Machines Corporation
20130330845 - Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via: A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an... Agent: Tel Epion Inc.
20130330846 - Test vehicles for encapsulated semiconductor device packages: A mechanism to electrically evaluate signals within an encapsulated semiconductor device package without the need for redesigning the package substrate is provided. Test bond pads are provided on a top surface of a semiconductor device die being placed within the semiconductor device package. One or more wire bonds having an... Agent:
20130330847 - Method and system for semiconductor device pattern loading effect characterization: The present disclosure provides a method and system for characterizing a pattern loading effect. A method may include performing a reflectivity measurement on a semiconductor wafer and determining an anneal process technique based on the reflectivity measurement. The determining the anneal process technique may include determining a spatial distance for... Agent: Taiwan Semiconductor Manufacturing Company, Ltd. ("tsmc")
20130330848 - Observation device, inspection device, method for manufacturing semiconductor device, and substrate support member: The present invention suppresses reductions in inspection precision caused by reflected and scattered light produced by wafer holders. In a wafer holder (10) that has protruding support parts (11) that contact and support a wafer and groove parts (12) that are separated from the wafer, the protruding support parts (11)... Agent:
20130330849 - Method for making light emitting diode: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed... Agent: Tsinghua University
20130330850 - Electrode patterning: A method is provided to isolated conductive pads on top of a multi-layer polymer device structure. The method utilizes laser radiation to ablate conductive material and create a non-conductive path, electrically isolating the conductive pads. The process is self-limiting and incorporates at least one layer within the stack that absorbs... Agent:
20130330851 - Manufacturing method of nerve-stimulating and signal-monitoring device: A method for manufacturing a nerve-stimulating and signal-monitoring device includes the steps of forming a first silicon oxide layer on a surface of a flexible substrate; forming a patterned doped p-type poly-silicon layer on the first silicon oxide layer; forming a second silicon oxide layer on the patterned doped p-type... Agent: Chung Hua University
20130330852 - Manufacturing method of light-emitting device: A manufacturing method of a light-emitting device includes: a die-bonding process in which a semiconductor light emitting element is placed on a bonding target member via an adhesive containing a silicone resin so that a surface opposite to an exposure surface faces the bonding target member, and the adhesive is... Agent:
20130330858 - Liquid crystal display device and manufacturing method thereof: A method of manufacturing a liquid crystal display device including a TFT substrate with display and peripheral regions. The display region has pixels each having a pixel electrode and a TFT. A counter substrate opposes the TFT substrate and has a color filter formed at a position corresponding to a... Agent: Japan Display Inc
20130330853 - Methods of fabricating wafer-level flip chip device packages: In accordance with certain embodiments, semiconductor dies are at least partially coated with a conductive adhesive prior to singulation and subsequently bonded to a substrate having electrical traces thereon.... Agent:
20130330854 - Metiod of making led with bat-wing emitting field lens: A method for manufacturing an LED (light emitting diode) with bat-wing emitting field lens is disclosed. Firstly, a substrate is provided. The substrate includes a plurality of depressions each corresponding to a pair of electrodes. A plurality of LED chips are fastened in the depressions and electrically connected to the... Agent:
20130330855 - Optical device processing method: An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each optical device having electrodes formed on the front side. A processing method includes: forming a groove on a back side of the... Agent:
20130330856 - Optical device processing method: An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices. Each optical device has electrodes formed on the front side. A processing method includes: forming a groove on the front side of the... Agent:
20130330857 - Optical device processing method: An optical device processing method including a protective layer includes forming a protective layer of an insulator on the front side of an optical device wafer so as to insulate at least the electrodes from each other, forming a groove on the front side of the wafer along each division... Agent:
20130330866 - Light emitting device and fabrication method thereof: The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of... Agent: Seoul Opto Device Co., Ltd.
20130330859 - Method for making light emitting diode: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the... Agent: Tsinghua University
20130330860 - Method for making light emitting diode: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in the listed sequence. The first semiconductor layer, the active... Agent: Tsinghua University
20130330861 - Method for making light emitting diode: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer,... Agent: Tsinghua University
20130330862 - Method for making light emitting diode: A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer,... Agent: Tsinghua University
20130330863 - Method for making light emitting diode: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer... Agent: Tsinghua University
20130330864 - Method for making light emitting diode: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer... Agent: Tsinghua University
20130330865 - Method for making light emitting diode: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed... Agent: Tsinghua University
20130330867 - Semiconductor optical integrated device and method for fabricating the same: A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected... Agent: Fujitsu Limited
20130330868 - Organic light emitting diode display device and method of manufacturing the same: The OLED display device includes a substrate, a first electrode located on the substrate, a pixel defining layer located on the first electrode to expose a part of the first electrode, a fluorine-based polymer layer located on the pixel defining layer, an organic layer located on the first electrode, and... Agent:
20130330869 - Optical device processing method: An optical device processing method including: a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate; a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a... Agent:
20130330870 - Micro-electromechanical system devices: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is... Agent: Infineon Technologies Ag
20130330872 - Ion implantation fabrication process for thin-film crystalline silicon solar cells: A front contact thin-film solar cell is formed on a thin-film silicon solar cell. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In one embodiment, front contact thin-film solar cell is formed on a thin-film silicon solar cell. Emitter regions, selective emitter... Agent: Solexel, Inc.
20130330871 - Methods for texturing a semiconductor material: A method for modifying the texture of a semiconductor material is provided. The method includes performing a first texture step comprising reactive ion etching to a first surface of semiconductor material. After the first texture step, the first surface of the semiconductor material has a random texture comprising a plurality... Agent: Twin Creeks Technologies, Inc.
20130330873 - Gel-type polymer electrolyte for dye-sensitized solar cell and dye-sensitized solar cell comprising the same: The present disclosure relates to gel-type polymer electrolyte for a dye-sensitized solar cell, a dye-sensitized solar cell comprising the gel-type polymer electrolyte, and a method for manufacturing the dye-sensitized solar cell.... Agent: Research & Business Foundation Sungkyunkwan University
20130330874 - Chemical bath deposition method for fabrication of semiconductor films: A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by... Agent:
20130330875 - Nanoneedle plasmonic photodetectors and solar cells: The present disclosure provides a method for a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a... Agent: The Regents Of The University Of California
20130330876 - Novel heterocyclic compound, method for producing intermediate therefor, and use thereof: Provided are a novel heterocyclic compound represented by formula (1), and a field-effect transistor having a semiconductor layer comprising the aforementioned compound. Also provided is a method for producing an intermediate enabling the production of the aforementioned novel heterocyclic compound. (In the formula, R1 and R2 represent a hydrogen atom,... Agent: Hiroshima University
20130330877 - Method for manufacturing semiconductor device: An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of: forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130330878 - Hermetically sealed mems device and method of fabrication: A microelectromechanical (MEMS) device is fabricated from a wafer having a plurality of die regions with grooves and MEMS components formed on a wafer surface at each die region. A first metal having a relatively high melting temperature is formed on sidewalls of each groove, and a cap is attached... Agent: Texas Instruments Incorporated
20130330879 - Manufacturing method of semiconductor integrated circuit device: While an adhesive layer is provided over the rear surface of a semiconductor chip in die bonding, a lamination processing (main pressure bonding) is necessary for securing the adhesive state of the adhesive layer after the die bonding process (temporary pressure bonding). Typically the adhesive is hardened by applying heat... Agent: Renesas Electronics Corporation
20130330880 - Three dimensional flip chip system and method: Solder is simultaneously transferred from a mold to a plurality of 3D assembled modules to provide solder bumps on the modules. The mold includes cavities containing injected molten solder or preformed solder balls. A fixture including resilient pressure pads and vacuum lines extending through the pads applies pressure to the... Agent: International Business Machines Corporation
20130330881 - Double-sided adhesive tape, semiconductor packages, and methods of fabricating the same: Provided are a double-sided adhesive tape, semiconductor packages, and methods of fabricating the packages. A method of fabricating semiconductor packages includes providing a double-sided adhesive tape on a top surface of a carrier, the double-sided adhesive tape including a first adhesive layer and a second adhesive layer stacked on the... Agent: Samsung Electronics Co., Ltd.
20130330882 - Integrated circuit packages, methods of forming integrated circuit packages, and methods of assembling integrated circuit packages: Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at... Agent: Micron Technology, Inc.
20130330883 - Fabrication method of semiconductor package: A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and... Agent: Siliconware Precision Industries Co., Ltd.
20130330884 - Methods for protecting electronic circuits operating under high stress conditions: Apparatus and methods for electronic circuit protection under high stress operating conditions are provided. In one embodiment, an apparatus includes a substrate having a first p-well, a second p-well adjacent the first p-well, and an n-type region separating the first and second p-wells. An n-type active area is over the... Agent: Analog Devices, Inc.
20130330886 - Method of forming thin film poly silicon layer and method of forming thin film transistor: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method... Agent:
20130330885 - Side-gate defined tunable nanoconstriction in double-gated graphene multilayers: A method to fabricate a novel graphene based, electrically tunable, nanoconstriction device is described. The device includes a back-gate dielectric layer formed over a conductive substrate. The back-gate dielectric layer is, in one example, hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked... Agent: International Business Machines Corporation
20130330887 - Strained thin body cmos device having vertically raised source/drain stressors with single spacer: A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure;... Agent: International Business Machines Corporation
20130330888 - In situ grown gate dielectric and field plate dielectric: Methods and apparatuses are disclosed for providing heterostructure field effect transistors (HFETs) with high-quality gate dielectric and field plate dielectric. The gate dielectric and field plate dielectric are in situ deposited on a semiconductor surface. The location of the gate electrode may be defined by etching a first pattern in... Agent: Power Integrations, Inc.
20130330889 - Method of making a finfet device: The present disclosure provides many different embodiments of fabricating a FinFET device that provide one or more improvements over the prior art. In one embodiment, a method of fabricating a FinFET includes providing a semiconductor substrate and a plurality of dummy fins and active fins on the semiconductor substrate. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130330890 - Method of manufacturing semiconductor device with offset sidewall structure: A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity... Agent: Renesas Electronics Corporation
20130330891 - Dram with a nanowire access transistor: A semiconductor nanowire is formed integrally with a wraparound semiconductor portion that contacts sidewalls of a conductive cap structure located at an upper portion of a deep trench and contacting an inner electrode of a deep trench capacitor. The semiconductor nanowire is suspended from above a buried insulator layer. A... Agent: International Business Machines Corporation
20130330892 - Trench mosfet with trenched floating gates having thick trench bottom oxide as termination: A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask.... Agent: Force Mos Technology Co., Ltd.
20130330893 - Integrating formation of a replacement gate transistor and a non-volatile memory cell using a high-k dielectric: A first dielectric layer is formed in an NVM region and a logic region. A charge storage layer is formed over the first dielectric layer and is patterned to form a dummy gate in the logic region and a charge storage structure in the NVM region. A second dielectric layer... Agent:
20130330894 - Method of manufacturing semiconductor device: A semiconductor device fabrication method particularly suitable for the fabrication of a 90 nm embedded flash memory is disclosed. The method includes: forming a dielectric layer having a first thickness over a first device region and forming a dielectric layer having a second thickness different from the first thickness over... Agent:
20130330896 - Manufacturing method of silicon carbide semiconductor device: A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate... Agent: Denso Corporation
20130330895 - Method of manufacturing the trench power semiconductor structure: A method of manufacturing a trench power semiconductor structure is provided. The method comprising the steps of: providing a base, forming a dielectric pattern layer on the base to define an active region and a terminal region, wherein a portion of the base in the active region and the terminal... Agent: Super Group Semiconductor Co., Ltd.
20130330897 - Semiconductor memory device including multi-layer gate structure: A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a side of an upper surface of a substrate and has a first multi-layer gate. The first stepped portion is formed by etching the substrate adjacent... Agent: Kabushiki Kaisha Toshiba
20130330898 - Mos transistor process: A MOS transistor process includes the following steps. A gate structure is formed on a substrate. A source/drain is formed in the substrate beside the gate structure. After the source/drain is formed, (1) at least a recess is formed in the substrate beside the gate structure. An epitaxial structure is... Agent:
20130330899 - Preventing fully silicided formation in high-k metal gate processing: A method of forming gate stack structure for a transistor device includes forming a gate dielectric layer over a substrate; forming a first silicon gate layer over the gate dielectric layer; forming a dopant-rich monolayer over the first silicon gate layer; and forming a second silicon gate layer over the... Agent: International Business Machines Corporation
20130330900 - Methods of tailoring work function of semiconductor devices with high-k/metal layer gate structures by performing a fluorine implant process: One illustrative method disclosed herein includes forming a plurality of layers of material above a semiconducting substrate, wherein the plurality of layers of material will comprise a gate structure for a transistor, performing a fluorine ion implantation process to implant fluorine ions into at least one of the plurality of... Agent: Globalfoundries Inc.
20130330901 - Programmable metallization memory cell with layered solid electrolyte structure: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode... Agent:
20130330902 - Enhanced non-noble electrode layers for dram capacitor cell: A metal oxide first electrode material for a MIM DRAM capacitor is formed wherein the first and/or second electrode materials or structures contain layers having one or more dopants up to a total doping concentration that will not prevent the electrode materials from crystallizing during a subsequent anneal step. Advantageously,... Agent: Intermolecular, Inc.
20130330903 - Manufacturable high-k dram mim capacitor structure: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first... Agent: Intermolecular Inc.
20130330905 - Edge connect wafer level stacking: A method of making a stacked microelectronic package by forming a microelectronic assembly by stacking a first subassembly including a plurality of microelectronic elements onto a second subassembly including a plurality of microelectronic elements, at least some of the plurality of microelectronic elements of said first subassembly and said second... Agent: Tessera, Inc.
20130330904 - Overlay mark assistant feature: A method and apparatus for alignment are disclosed. An exemplary apparatus includes a substrate having an alignment region; an alignment feature in the alignment region of the substrate; and a dummy feature disposed within the alignment feature. A dimension of the dummy feature is less than a resolution of an... Agent:
20130330906 - Method of semiconductor integrated circuit fabrication: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI),... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130330907 - Methods of forming semiconductor devices by forming semiconductor channel region materials prior to forming isolation structures: One example of a method disclosed herein for forming a transistor surrounded by an isolation structure includes the steps of, prior to forming the isolation structure, forming a semiconductor material on a region of a semiconducting substrate, after forming the semiconductor material, forming the isolation structure in the substrate around... Agent: Globalfoundries Inc.
20130330908 - Semiconductor component with vertical structures having a high aspect ratio and method: A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between... Agent: Infineon Technologies Ag
20130330910 - Dicing die bond film and method of manufacturing semiconductor device: The present invention provides a dicing die bond film in which yielding and breaking of the dicing film are prevented and in which the die bond film can be suitably broken with a tensile force. In the dicing die bond film of the present invention, the tensile strength of the... Agent:
20130330909 - Method for cutting brittle sheet-shaped structure: A method for cutting brittle sheet-shaped structure is disclosed. A brittle sheet-shaped structure having a cutting surface including a first cutting line on the cutting surface of the brittle sheet-shaped structure is formed. The cutting surface is divided into a first section and a second section, wherein the first section... Agent: Tsinghua University
20130330913 - Method for manufacturing semiconductor device: A structure includes a substrate, a template layer formed on the surface of the substrate and including an AlN layer, and a device structure portion formed by stacking AlGaN semiconductor layers on the template layer. For the structure, the AlN layer is irradiated from a side close to the substrate... Agent: Meijo University
20130330911 - Method of semiconductor film stabilization: Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor... Agent:
20130330912 - Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device: A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of... Agent: Fujitsu Semiconductor Limited
20130330914 - Semiconductor device and manufacturing method thereof: It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally... Agent:
20130330915 - Method of making a thin crystalline semiconductor material: A method of preparing a thin material layer from a semiconductor substrate is presented. The method entails forming a stress-generating epitaxial layer on a base substrate to form a stressed region, and achieving separation along the stressed region to produce a first part and a second part. The stress-generating epitaxial... Agent:
20130330916 - Methods of forming high mobility fin channels on three dimensional semiconductor devices: Disclosed herein are various methods of forming high mobility fin channels on three dimensional semiconductor devices, such as, for example, FinFET semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define an original fin structure for the device,... Agent: Globalfoundries Inc.
20130330917 - Apparatus and process for integrated gas blending: A system (10) for delivery of dilute fluid, utilizing an active fluid source (12), a diluent fluid source (14), a fluid flow metering device (24) for dispensing of one of the active and diluent fluids, a mixer (28) arranged to mix the active and diluent fluids to form a diluted... Agent: Advanced Technology Materials, Inc
20130330918 - Patterned doping of semiconductor substrates using photosensitive monolayers: A semiconductor device and a method of fabricating a semiconductor device are disclosed. Embodiments of the invention use a photosensitive self-assembled monolayer to pattern the surface of a substrate into hydrophilic and hydrophobic regions, and an aqueous (or alcohol) solution of a dopant compound is deposited on the substrate surface.... Agent: International Business Machines Corporation
20130330919 - Manufacturing process of gate stack structure with etch stop layer: A manufacturing process of an etch stop layer is provided. The manufacturing process includes steps of providing a substrate; forming a gate stack structure over the substrate, wherein the gate stack structure at least comprises a dummy polysilicon layer and a barrier layer; removing the dummy polysilicon layer to define... Agent: United Microelectronics Corporation
20130330920 - Method and apparatus for substrate preclean with hydrogen containing high frequency rf plasma: A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen,... Agent: Applied Materials, Inc.
20130330921 - Plating process and structure: A system and method for plating a contact connected to a test pad is provided. An embodiment comprises inserting a blocking material into vias between the contact and the test pad. In another embodiment a blocking structure may be inserted between the contact and the test pad. In yet another... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130330922 - Semiconductor constructions and assemblies and electronic systems: The invention includes semiconductor assemblies having two or more dies. An exemplary assembly has circuitry associated with a first die front side electrically connected to circuitry associated with a second die front side. The front side of the second die is adjacent a back side of the first die, and... Agent: Micron Technology, Inc.
20130330923 - Middle of line structures and methods for fabrication: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in... Agent: International Business Machines Corporation
20130330924 - Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via: A method for opening a conformal layer at the bottom of a contact via on a substrate is described. The method includes providing a substrate having a first layer with a via pattern formed therein and a second layer conformally deposited on the first layer and within the via pattern... Agent: Tel Epion, Inc.
20130330925 - Methods of treating a device-substrate and support-substrates used therein: Disclosed are methods of treating a device-substrate, and support-substrates used therein. The methods may include providing the device-substrate having an integrated circuit, bonding a first top surface of the device-substrate to a support-substrate, and polishing a first bottom surface of the device-substrate. The support-substrates include a second top surface, a... Agent: Samsung Electronics Co., Ltd.
20130330927 - Cleaning liquid for lithography and method for forming wiring: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a... Agent:
20130330926 - Depositing tungsten into high aspect ratio features: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is... Agent:
20130330928 - Film forming device, substrate processing system and semiconductor device manufacturing method: A substrate processing system of forming a resist pattern having a molecular resist of a low molecular compound on a substrate includes a film forming device configured to form a resist film on the substrate; an exposure device configured to expose the formed resist film; and a developing device configured... Agent: Tokyo Electron Limited
20130330929 - Seal member, etching apparatus, and a method of manufacturing a semiconductor device: Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity... Agent: Kabushiki Kaisha Toshiba
20130330930 - Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device: A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the... Agent: Hitachi Kokusai Electric Inc.
20130330931 - Method of making a semiconductor device: In one embodiment, a method for forming an electronic device includes providing a substrate having a plurality of electronic devices formed therein, forming a protective layer over a major surface of the substrate containing the plurality of electronic devices, forming a mold layer over the protective layer, thinning a major... Agent:
20130330932 - Hardmask materials: Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped... Agent: Novellus Systems, Inc.
20130330933 - Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control: A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii)... Agent: AsmIPHolding B.v.
20130330934 - Method of forming thin film poly silicon layer: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon... Agent:
20130330935 - Remote plasma based deposition of sioc class of films: Provided are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions that employ silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors also have one or more silicon-oxygen bonds and/or silicon-carbon... Agent:
20130330937 - Process for producing silicon and oxide films from organoaminosilane precursors: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected... Agent:
20130330938 - Rotatable and tunable heaters for semiconductor furnace: A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.12/05/2013 > 79 patent applications in 64 patent subcategories.
20130323859 - System and method of monitoring and controlling atomic layer deposition of tungsten: A method of semiconductor processing comprises providing a semiconductor wafer in a processing chamber; feeding at least one tungsten-containing precursor in a gas state into the processing chamber for atomic layer deposition (ALD) of tungsten; feeding at least one reducing chemical in a gas state into the processing chamber; and... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130323861 - Process of treating defects during the bonding of wafers: The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a... Agent: Soitec
20130323860 - Substrate support providing gap height and planarization adjustment in plasma processing chamber: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of... Agent: Lam Research Corporation
20130323862 - Led package manufacturing system and resin coating method for use in led package manufacturing system: In resin coating, carrying a light-passing member test-coated with a resin on a light-passing member carrying unit; making a light source placed above the light-passing member carrying unit emit excitation light exciting the fluorescent substance; measuring light emission characteristics of the light by irradiating the excitation light emitted from the... Agent: Panasonic Corporation
20130323863 - Method for generating graphene structures: A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the... Agent: Intermolecular, Inc.
20130323864 - Semiconductor test equipment and method of testing and manufacturing semiconductor devices using the same: A method of manufacturing a semiconductor device including a substrate is disclosed. The method includes: providing the substrate on a wafer chuck; positioning a probe card having probe needles above the substrate; positioning a tester head above the probe card; using a sensor included in the tester head, measuring a... Agent: Samsung Electronics Co., Ltd.
20130323865 - Power light emitting die package with reflecting lens and the method of making the same: A light emitting die package and a method of manufacturing the die package are disclosed. The die package includes a leadframe, at least one light emitting device (LED), a molded body, and a lens. The leadframe includes a plurality of leads and has a top side and a bottom side.... Agent: Cree, Inc.
20130323866 - Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130323867 - Organic el display device and method of manufacturing the same: Disclosed herein is an organic EL display device, including: a lower electrode provided every first organic EL element for a blue color and every second organic EL element for another color on a substrate; a hole injection/transport layer provided every first and second organic EL elements; a second organic light... Agent: Sony Corporation
20130323868 - Deposition apparatus and method for manufacturing organic light emitting diode display using the same: A deposition apparatus includes: a deposition source including a spray nozzle linearly arranged in a first direction and discharging a deposition material; and a pair of angle control members disposed at both sides of the deposition source and controlling a discharging direction angle of the deposition material. Each angle control... Agent: Samsung Display Co., Ltd.
20130323871 - Method for manufacturing organic electroluminescent element: A method for manufacturing an organic electroluminescent element including, in the following order, an anode, a light-emitting layer, an electron injection layer, and a cathode, the method including the steps of: (A) forming the anode; (B) forming the light-emitting layer; (C) forming the electron injection layer; and (D) forming the... Agent: Sumitomo Chemical Company, Limited
20130323870 - Organic compound, anthracene derivative, and light-emitting element, light-emitting device, and electronic device using the anthracene derivative: Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting element that is capable of operation for a long time; and... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130323869 - Organic material, light-emitting element, light-emitting device, electronic appliance, and lighting device: A novel organic material with fewer impurities, a light-emitting element including the organic material, and a light-emitting device, an electronic appliance, and a lighting device each of which includes the light-emitting element are provided. The organic material is obtained by coupling an aryl halide and an aryl boronic acid or... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130323872 - Semiconductor structure having nanocrystalline core and nanocrystalline shell: A method of fabricating a semiconductor structure involves forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, and forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the... Agent:
20130323873 - Optically triggered semiconductor device and method for making the same: A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the... Agent: General Electric Company
20130323874 - Manufacture of solar cell module: A solar cell module is manufactured by coating and curing a curable silicone gel composition onto one surface of each of two panels except a peripheral region to form a cured silicone gel coating, providing a seal member (3) on the peripheral region of one panel (1a), placing a solar... Agent:
20130323875 - Methods of forming a through via structure: Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface... Agent:
20130323876 - Image device and methods of forming the same: A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323877 - Methodology for forming pnictide compositions suitable for use in microelectronic devices: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting... Agent: Dow Global Technologies LLC
20130323878 - Liquid precursor inks for deposition of in-se, ga-se and in-ga-se: An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic... Agent:
20130323879 - Coating method, and method of forming organic layer using the same: A coating apparatus includes a stage supporting a coating target, a coating part on the stage, the coating part being configured to apply a coating material onto the coating target, and a heating source opposite to and spaced apart from the stage, the heating source being configured to supply heat... Agent:
20130323880 - Process and materials for making contained layers and devices made with same: In Formula I: R1 through R6 are D, alkyl, aryl, or silyl, where adjacent R groups can join together to form an aromatic ring; X is a single bond, H, D, or a leaving group; Y is H, D, alkyl, aryl, silyl, or vinyl; a-f are an integer from 0-4;... Agent: Ei Du Pont De Nemours And Company
20130323881 - Vapor deposition device, vapor deposition method, and organic el display device: Vapor deposition particles (91) discharged from at least one vapor deposition source opening (61) pass through a plurality of limiting openings (82) of a limiting unit (80) and a plurality of mask openings (71) of a vapor deposition mask (70), and adhere to a substrate (10) that relatively moves along... Agent: Sharp Kabushiki Kaisha
20130323882 - Vapor deposition particle emitting device, vapor deposition apparatus, vapor deposition method: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is... Agent:
20130323883 - Device with through-silicon via (tsv) and method of forming the same: A method includes forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth. The method further includes forming an insulation structure on the silicon substrate along the sidewalls and the bottom of the opening and forming a conductive layer on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323884 - Three dimensional microelectronic components and fabrication methods for same: Aspects and examples include electrical components and methods of forming electrical components. In one example, a method includes selecting a substrate, forming a pattern of a first conductive material on a top surface of the substrate, forming a pattern of a second conductive material on a bottom surface of the... Agent: The Charles Stark Draper Laboratory
20130323885 - Method of manufacturing high-capacity semiconductor package: A method of manufacturing a high-capacity semiconductor package includes preparing a leadframe not comprising a chip mount area and comprising only a lead on a tape; attaching an interposer on a center area of the leadframe; stacking semiconductor chips stepwise on a first surface of the interposer; performing a first... Agent: Sts Semiconductor & Telecommunications Co., Ltd.
20130323886 - Semiconductor molding chamber: A system and method for a semiconductor molding chamber is disclosed. An embodiment comprises a top molding portion and a bottom molding portion that form a cavity between them into which a semiconductor wafer is placed. The semiconductor molding chamber has a first set of vacuum tubes which hold and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323887 - Thyristor-based memory cells, devices and systems including the same and methods for forming the same: Semiconductor devices including a plurality of thyristor-based memory cells, each having a cell size of 4F2, and methods for forming the same are provided. The thyristor-based memory cells each include a thyristor having vertically superposed regions of alternating dopant types, and a control gate. The control gate may be electrically... Agent: Micron Technology, Inc.
20130323888 - Process for fabricating a transistor comprising nanoscale semiconductor features using block copolymers: A process for fabricating one transistor, comprising a semiconductor region, comprising a source region, a drain region, and a channel region covered with a gate, comprises: production of an primary etching mask on the surface of the semiconductor region, said mask containing at least one primary aperture; depositing in said... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20130323889 - Method of fabricating pixel structure: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the... Agent: Au Optronics Corp.
20130323890 - Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react... Agent: Intermolecular Inc.
20130323891 - Integrated circuit device with well controlled surface proximity and method of manufacturing same: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323892 - Methods of performing highly tilted halo implantation processes on semiconductor devices: One illustrative method disclosed herein involves forming first and second gate structures that include a cap layer for a first transistor device and a second transistor device, respectively, wherein the first and second transistors are oriented transverse to one another, performing a first halo ion implant process to form first... Agent: Globalfoundries Inc.
20130323893 - Methods for forming mos devices with raised source/drain regions: A method includes forming a first gate stack of a first device over a semiconductor substrate, and forming a second gate stack of a second MOS device over the semiconductor substrate. A first epitaxy is performed to form a source/drain stressor for the second MOS device, wherein the source/drain stressor... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323894 - Transistor and method for forming the same: The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a source region and a drain region located in... Agent:
20130323895 - Devices with nanocrystals and methods of formation: Devices can be fabricated using a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites can be created on a surface of the substrate. The creation of the nucleation sites may include implanting ions with an energy and a dose selected to provide a... Agent: Micron Technology, Inc.
20130323896 - Non-volatile memory device and method for fabricating the same: A non-volatile memory device includes gate structures including first insulation layers that are alternately stacked with control gate layers over a substrate, wherein the gate structures extend in a first direction, channel lines that each extend over the gate structures in a second direction different from the first direction, a... Agent: Sk Hynix Inc.
20130323897 - Semiconductor device with improved on-resistance: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device... Agent: Infineon Technologies Austria Ag
20130323899 - High performance cmos device design: A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323898 - Method of lithography process with an under isolation material layer: A method of forming a integrated circuit pattern. The method includes forming gate stacks on a substrate, two adjacent gate stacks of the gate stacks being spaced away by a dimension G; forming a nitrogen-containing layer on the gate stacks and the substrate; forming a dielectric material layer on the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323900 - Strained mos device and methods for forming the same: A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the semiconductor substrate and adjacent the gate stack. The stressor comprises at least a first portion with a first top surface lower than the top surface of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323901 - Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus: A capacitive element, includes: an active region parted by an element isolation region formed in a semiconductor substrate; a first electrode formed of a diffusion layer in the active region; an insulating layer formed on the first electrode; and a second electrode formed on a planar surface of the first... Agent: Sony Corporation
20130323902 - Methods of forming a plurality of capacitors: A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward... Agent: Micron Technology, Inc.
20130323904 - Method for forming insulating film: m
20130323903 - Process for fabricating an integrated circuit having trench isolations with different depths: A process for fabricating an integrated circuit includes, in a stack of layers including a silicon substrate overlaid with a buried insulating layer overlaid with a silicon layer, etching first trenches into the silicon substrate, depositing a silicon nitride layer on the silicon layer to fill the first trenches and... Agent:
20130323905 - Semiconductor component and method for producing a semiconductor component: A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein... Agent: Infineon Technologies Ag
20130323906 - Method of manufacturing thin-film bonded substrate used for semiconductor device: A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin... Agent: Samsung Corning Precision Materials Co., Ltd.
20130323907 - Active carrier for carrying a wafer and method for release: In the field of release and pickup of ultrathin semiconductor dies, there is provided an active carrier (1) for carrying a wafer (20) and a method for using such a carrier (1). The wafer (20) comprises a particular die arrangement (P). The active carrier (1) comprises a base plate (2)... Agent: Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno
20130323908 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device, wherein the method comprises steps as follows: Firstly, a device wafer is provided and a patterned bonding layer is then formed within a scribe line region of the device wafer. Subsequently a handle wafer is bonded to the device wafer by the patterned... Agent: United Microelectronics Corporation
20130323909 - Method for fabricating semiconductor components having lasered features containing dopants: A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated circuits and circuitry on the circuit side; thinning the substrate from the back side to a selected thickness to form a thinned substrate; applying a dopant to... Agent: Micron Technology, Inc.
20130323910 - Method for manufacturing semiconductor device and semiconductor manufacturing system: A single-crystal substrate is placed on a supporting table while maintaining crystalline orientation of the single-crystal substrate. The single-crystal substrate has contacting regions on a periphery of an upper surface of the single-crystal substrate. Linear contacting surfaces of contacting pins are placed in contact with the contacting regions of the... Agent: Mitsubishi Electric Corporation
20130323911 - Method for forming semiconductor device: A method for forming a semiconductor device is disclosed. In the semiconductor device, a gate is formed to enclose a fin structure in a 6F2 saddle fin gate structure transistor, so that the size of a channel region increases. In accordance with an aspect of the present invention, a method... Agent: Sk Hynix Inc.
20130323913 - Dichalcogenobenzodipyrrole compound: (wherein, X and Y represent each independently a sulfur atom, an oxygen atom, a selenium atom, a tellurium atom or SO2. R1 to R8 represent each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon... Agent: Sumitomo Chemical Company, Limited
20130323912 - Method for manufacturing semiconductor device: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130323914 - Methods for depositing amorphous silicon: Methods for depositing an amorphous silicon layer on wafers are disclosed. A process wafer, a control wafer, and a dummy wafer may be loaded into a chamber where an amorphous silicon layer may be deposited on the process wafer. Afterwards, the process wafer and the control wafer may be removed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323915 - Method and apparatus for forming silicon film: A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an... Agent: Tokyo Electron Limited
20130323916 - Plasma doping method and apparatus: A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by... Agent: Panasonic Corporation
20130323917 - Self-aligned patterning for deep implantation in a semiconductor structure: Methods of forming self-aligned patterns for performing oppositely doped deep implantations in a semiconductor substrate are disclosed. The semiconductor substrate has implantation and non-implantation regions. The methods include forming a hardmask pattern for a first implantation with a first conductivity-type dopant, depositing an etch stop layer, filling trenches between the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323918 - Methods for electron beam patterning: A method for electron-beam patterning includes forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer on the conductive material layer; forming a resist layer on the BARC layer; and directing an electron beam (e-beam) to the sensitive resist layer for an electron beam patterning... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323920 - Method of fabricating a gate-all-around word line for a vertical channel dram: A method of fabricating a self-aligned buried wordline in a structure which contains a self-aligned buried bit line, where the overall structure which makes up a portion of a vertical channel DRAM. The materials and processes used enable self-alignment of elements of the buried wordline during the fabrication process. In... Agent:
20130323919 - Methods to stop contact metal from extruding into replacement gates: A method of preventing contact metal from protruding into neighboring gate devices to affect work functions of the neighboring gate devices is provided includes forming a gate structure. Forming the gate structure includes forming a work function layer, and forming a gate metal layer having a void, wherein the work... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323921 - Method of making an insulated gate semiconductor device and structure: In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode. The conformal deposited dielectric... Agent:
20130323922 - Split gate memory device with gap spacer: A method for forming a split gate device includes forming a first sidewall of a first conductive gate layer, wherein the semiconductor layer includes a tunnel region laterally adjacent the first sidewall, forming a dielectric layer along the first sidewall to provide for increased thickness of a gap spacer, forming... Agent: Freescale Semiconductor, Inc.
20130323923 - Methods for fabricating integrated circuits having improved spacers: Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having a gate structure. An atomic layer deposition (ALD) process is performed to deposit a spacer around the gate structure. The ALD process includes alternating flowing ionized radicals... Agent: Globalfoundries Inc.
20130323924 - Methods of forming a pattern in a material and methods of forming openings in a material to be patterned: Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting... Agent: Micron Technology, Inc.
20130323925 - Pattern forming method, mold and data processing method: According to one embodiment, a pattern forming method is disclosed. The method can include forming an insulating layer on a major surface of a substrate. The method can include forming first and second openings on the insulating layer. The first opening has a first length in a first direction along... Agent: Kabushiki Kaisha Toshiba
20130323926 - Composite material, method of producing the same, and apparatus for producing the same: Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the... Agent: Japan Science And Technology Agency
20130323927 - Manufacturing method of circuit structure: A manufacturing method of a circuit structure is provided. A metal layer having an upper surface is provided. A surface passivation layer is formed on the metal layer. The surface passivation layer exposes a portion of the upper surface of the metal layer, and a material of the metal layer... Agent: Subtron Technology Co., Ltd.
20130323928 - Method of manufacturing semiconductor device, and mask: An improvement is achieved in the performance of a semiconductor device. A method of manufacturing the semiconductor device includes an exposure step of subjecting a resist film formed over a substrate to pattern exposure using EUV light reflected by the top surface of an EUV mask which is a reflection-type... Agent: Renesas Electronics Corporation
20130323929 - Method for selectively modifying spacing between pitch multiplied structures: Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the... Agent: Micron Technology, Inc.
20130323931 - Device manufacturing and cleaning method: A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130323930 - Selective capping of metal interconnect lines during air gap formation: Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is... Agent:
20130323932 - Layer-layer etch of non volatile materials using plasma: A method for etching a metal layer, comprising plurality of cycles is provided. In each cycle, an etch gas comprising PF3, CO and NO, or COF2 is flowed into a process chamber. In each cycle, the etch gas is formed into a plasma. In each cycle, the flow of the... Agent: Lam Research Corporation
20130323933 - Methods for forming microlenses: Methods for forming microlenses on a semiconductor substrate are provided. An inductively coupled plasma etch process using a process gas that includes a mixture of CF4 and CHF3 can be used to modify the lens shape of a plurality of microlens objects located on a semiconductor substrate to meet microlens... Agent:
20130323934 - Dye adsorption device, dye adsorption method and substrate treatment apparatus: [Solution] A flow of a dye solution is formed in a gap between solution guide surface (92L, 92R) of a nozzle (20) and a substrate (G) during the treatment, and a porous semiconductor layer of a treated surface of the substrate is subject to dye adsorption treatment in this flow... Agent: Tokyo Electron Limited
20130323935 - Film forming method and apparatus: A method of forming a thin film on a surface of target objects in a vacuum-evacuable processing chamber by using a source gas and a reaction gas includes: forming a mixed gas by mixing the source gas and an inert gas in a gas reservoir tank, and supplying the mixed... Agent:
20130323936 - Apparatus and methods for rapid thermal processing: Embodiments of the present invention provide apparatus and methods for performing rapid thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a heating source disposed outside a chamber body and configured to provide thermal energy towards a processing volume. The substrate... Agent:
20130323937 - Combined laser processing system and focused ion beam system: A processing system for forming a cross-section of an object. The processing system comprises a focused ion beam system for forming the cross-section from a pre-prepared surface region of the object and a laser and a light optical system for forming the pre-prepared surface region by laser ablation of a... Agent: Carl Zeiss Microscopy Gmbh11/28/2013 > 79 patent applications in 66 patent subcategories.
20130316470 - Method which can form contact holes in wafer of semiconductor: The present invention relates to the field of semiconductor integrated circuits, and particularly relates to a method which can form a contact hole in a wafer of semiconductor material. The invention has proposed a method which can form a contact hole in a wafer of semiconductor: measuring and comparing a... Agent: Shanghai Huali Microelectronics Corporation
20130316471 - Test line placement to improve die sawing quality: A semiconductor wafer structure includes a plurality of dies, a first scribe line extending along a first direction, a second scribe line extending along a second direction and intersecting the first scribe line, wherein the first and the second scribe lines have an intersection region. A test line is formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130316472 - High productivity combinatorial oxide terracing and pvd/ald metal deposition combined with lithography for gate work function extraction: Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. The high productivity combinatorial... Agent: Intermolecular, Inc.
20130316473 - Method of processing inkjet head substrate: A method of processing an inkjet head substrate includes, in series, a step of forming a barrier layer on a substrate and forming a seed layer on the barrier layer, a step of forming a resist film on the seed layer and patterning the resist film such that the resist... Agent: Canon Kabushiki Kaisha
20130316474 - Organic light emitting diode display device and method of fabricating the same: An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.... Agent:
20130316476 - Manufacturing method of a retaining wall of an led: A method for manufacturing a retaining wall of an LED is disclosed. The method includes the steps of: providing a substrate and applying a photosensitive layer on the substrate; exposing the photosensitive layer for forming a pattern of the retaining wall of the LED; removing the exposed photosensitive layer by... Agent: Aac Technologies Pte. Ltd
20130316475 - Method of manufacturing organic light emitting display panel: A method of manufacturing an organic light emitting display panel forming a protective insulating film in a luminescent region without causing defects in a pattern is disclosed. The method of manufacturing an organic light emitting display panel includes forming a substrate having a luminescent region and a pad region, simultaneously... Agent: Lg Display Co., Ltd.
20130316478 - Light emitting device: A light emitting device capable of improving both color unevenness and emission output power is provided. The light emitting device includes a semiconductor light emitting element including a semiconductor layer that emits primary light; and a fluorescent material layer disposed on the light emitting side of the semiconductor light emitting... Agent: Nichia Corporation
20130316477 - Method for manufacturing liquid crystal display device: The present invention provides a method for manufacturing a liquid crystal display device, which includes (1) providing a substrate; (2) forming a black matrix on a surface of the substrate; (3) sequentially forming R, G, B on the surface of the substrate; (4) forming spacers on the surface of the... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd.
20130316479 - Semiconductor package and method of manufacturing the same: A light-emitting device package including a lead frame formed of a metal and on which a light-emitting device chip is mounted; and a mold frame coupled to the lead frame by injection molding. The lead frame includes: a mounting portion on which the light-emitting device chip is mounted; and first... Agent: Samsung Electronics Co., Ltd.
20130316480 - Method for manufacturing liquid crystal display device: The present invention provides a method for manufacturing liquid crystal display device, which includes (1) providing a substrate and (2) forming a black matrix on a surface of the substrate and at the same time forming support structures, wherein the support structures are arranged to correspond to the site where... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd.
20130316482 - In situ synthesis of nanoparticles on substrates by inkjet printing: Nanoparticles may be formed on a substrate by mixing precursor solutions deposited by an inkjet printer. A first solution is deposited on a substrate from a first inkjet print cartridge. Then, a second solution is deposited on the substrate from a second inkjet print cartridge. The solutions may be printed... Agent: King Abdullah University Of Science And Technology
20130316481 - Method for manufacturing semiconductor light emitting device: A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type... Agent: Samsung Electronics Co., Ltd.
20130316483 - Led with improved injection efficiency: A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer... Agent: Toshiba Techno Center Inc.
20130316485 - Dye adsorption apparatus and dye adsorption method: [Solution] A dye adsorption unit (20) includes a processing tank (30) of which the upper surface is opened, in order to perform a batch dye adsorption process for a predetermined number of substrates (G). The dye adsorption unit (20) further includes, as a moving system around the processing tank (30),... Agent: Tokyo Electron Limited
20130316484 - Enhancing uniformity of slab region thickness in optical components: A method of forming an optical device includes generating a device precursor having a layer of a light-transmitting medium on a base. The method also includes forming an etch stop on the layer of light-transmitting medium. An active medium is grown on the etch stop and on the light-transmitting medium... Agent:
20130316486 - Collector grid and interconnect structures for photovoltaic arrays and modules: An interconnected arrangement of photovoltaic cells is achieved using laminating current collector electrodes. The electrodes comprise a pattern of conductive material extending over a first surface of sheetlike substrate material. The first surface comprises material having adhesive affinity for a selected conductive surface. Application of the electrode to the selected... Agent:
20130316487 - Methods and applications of non-planar imaging arrays: System, devices and methods are presented that provide an imaging array fabrication process method, comprising fabricating an array of semiconductor imaging elements, interconnecting the elements with stretchable interconnections, and transfer printing the array with a pre-strained elastomeric stamp to a secondary non-planar surface.... Agent:
20130316488 - Removal of stressor layer from a spalled layer and method of making a bifacial solar cell using the same: A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate... Agent: International Business Machines Corporation
20130316489 - Solid-state imaging device: In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field... Agent: Sony Corporation
20130316490 - Solar cell and solar cell production method:
20130316491 - Optoelectronic devices and applications thereof: In one aspect, optoelectronic devices are described herein. In some embodiments, an optoelectronic device comprises a fiber core, a radiation transmissive first electrode surrounding the fiber core, at least one photosensitive inorganic layer surrounding the first electrode and electrically connected to the first electrode, and a second electrode surrounding the... Agent: Wake Forest University
20130316492 - Method and apparatus for forming pattern: There is provided a pattern forming apparatus which transfers a paste to a predetermined position of a pattern forming object fixed to a table through a pattern forming mask having opening portions at predetermined positions using a discharge mechanism part. To realize a pattern forming which allows the stable forming... Agent: Hitachi High-technologies Corporation
20130316493 - Method for manufacturing semiconductor device: It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130316494 - Chip package and method for forming the same: An embodiment of the invention provides a chip package, which includes: a substrate having an upper surface and a lower surface; a passivation layer located overlying the upper surface of the substrate; a plurality of conducting pad structures disposed overlying the upper surface of the substrate, wherein at least portions... Agent: Xintec Inc.
20130316495 - Substrate for semiconductor package and method of manufacturing thereof: Disclosed is a substrate for a semiconductor package in which leakage of radiation noise from a gap between a semiconductor element and a mounting substrate can be prevented. The substrate for the semiconductor package includes a coplanar waveguide including a signal and ground electrodes on the mounting substrate, the signal... Agent: Nec Corporation
20130316496 - Method of manufacturing semiconductor package having no chip pad: A method of manufacturing a semiconductor package having no chip pad includes preparing a polyimide tape on which an adhesive layer is arranged; forming lead members on the adhesive layer so as to form a plurality of semiconductor packages in a matrix form; attaching the polyimide tape to a carrier;... Agent: Sts Semiconductor & Telecommunications Co., Ltd.
20130316498 - Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode: In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the... Agent: Denso Corporation
20130316497 - Three dimensional microelectronic components and fabrication methods for same: Aspects and examples include electrical components and methods of forming electrical components. In one example, a method includes selecting a substrate, forming a pattern of a first conductive material on a top surface of the substrate, forming a pattern of a second conductive material on a bottom surface of the... Agent: The Charles Stark Draper Laboratory
20130316499 - Chip package and fabrication method thereof: A chip package and a fabrication method thereof are provided according to an embodiment of the invention. The chip package includes a semiconductor substrate containing a chip and having a device area and a peripheral bonding pad area. A plurality of conductive pads is disposed at the peripheral bonding pad... Agent: Xintec Inc.
20130316500 - Method of manufacturing semiconductor device: The method includes the steps of: providing a lead frame, including providing a concaved part in an upper face of a joint part of a die-pad-support lead of a lead frame for setting down a die pad and a tie-bar; bonding a semiconductor chip to a first principal face of... Agent: Renesas Electronics Corporation
20130316501 - Ultra-thin near-hermetic package based on rainier: A microelectronic package including a dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface; a metallic wall bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface; a... Agent: Tessera, Inc.
20130316502 - Enhancement mode iii-n hemts: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the... Agent: Transphorm Inc.
20130316503 - Structure and method to modulate threshold voltage for high-k metal gate field effect transistors (fets): A method for forming an electrical device that includes forming a high-k gate dielectric layer over a semiconductor substrate that is patterned to separate a first portion of the high-k gate dielectric layer that is present on a first conductivity device region from a second portion of the high-k gate... Agent: International Business Machines Corporation
20130316504 - Semiconductor device and method of fabricating same: A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate and separated by an... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130316505 - Control of local environment for polysilicon conductors in integrated circuits: A method of fabricating gate level electrodes and interconnects in an integrated circuit, and an integrated circuit so fabricated, with improved process margin for the gate level interconnects of a width near the critical dimension. Off-axis illumination, as used in the photolithography of deep sub-micron critical dimension, is facilitated by... Agent: Texas Instruments Incorporated
20130316507 - Method for manufacturing nitride semiconductor element: A method for manufacturing a heterojunction field effect transistor 1 comprises the steps of: epitaxially growing a drift layer 20a on a support substrate 10; epitaxially growing a current blocking layer 20b which is a p-type semiconductor layer on the drift layer 20a at a temperature equal to or higher... Agent: Sumitomo Electric Industries, Ltd.
20130316506 - Semiconductor process: A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the... Agent:
20130316508 - Ldmos transistor with asymmetric spacer as gate: The present invention provides a laterally diffused metal oxide semiconductor (LDMOS) transistor and a method for fabricating it. The LDMOS transistor includes an n-type epitaxial layer formed on a p-type substrate, and an asymmetric conductive spacer which acts as its gate. The LDMOS transistor also includes a source and a... Agent: Micrel, Inc.
20130316509 - Semiconductor device manufacturing method: The present invention provides a manufacturing method for a semiconductor device having epitaxial source/drain regions, in which a diffusion barrier layer of the source/drain regions made of epitaxial silicon-carbon or germanium silicon-carbon are added on the basis of epitaxially growing germanium-silicon of the source/drain regions in the prior art process,... Agent:
20130316510 - Method of forming a resist pattern with multiple post exposure baking steps: A method of forming a integrated circuit pattern. The method includes coating a photoresist layer on a substrate; performing a lithography exposure process to the photoresist layer; performing a multiple-step post-exposure-baking (PEB) process to the photoresist layer; and developing the photoresist layer to form a patterned photoresist layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130316511 - Superior stability of characteristics of transistors having an early formed high-k metal gate: When forming sophisticated transistors on the basis of a high-k metal gate electrode structure and a strain-inducing semiconductor alloy, a superior wet cleaning process strategy is applied after forming cavities in order to reduce undue modification of sensitive gate materials, such as high-k dielectric materials, metal-containing electrode materials and the... Agent: Globalfoundries Inc.
20130316512 - Semiconductor wire-array varactor structures: Semiconductor variable capacitor (varactor) devices are provided, which are formed with an array of radial p-n junction structures to provide improved dynamic range and sensitivity. For example, a semiconductor varactor device includes a doped semiconductor substrate having first and second opposing surfaces and an array of pillar structures formed on... Agent: International Business Machines Corporation
20130316513 - Fin isolation for multigate transistors: Multigate transistor devices and methods of their fabrication are disclosed. In one method, a substrate including a semiconductor upper layer and a lower layer beneath the upper layer is provided. The lower layer has a rate of transformation into a dielectric that is higher than a rate of transformation into... Agent: International Business Machines Corporation
20130316515 - Method for producing silicon dioxide film: [Means for solving] A method for forming a silicon dioxide film, comprising the steps of: coating a substrate with a polysilazane composition to form a coat, and then heating the formed coat in a hydrogen peroxide atmosphere at 50 to 200° C. This method enables to form isolation structures such... Agent: Az Electronic Materials (luxembourg) S.a.r.l.
20130316514 - Method of fabricating a gate: A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate.... Agent: Samsung Electronics Co., Ltd.
20130316516 - Bonding system and bonding method: Disclosed is a bonding system which efficiently performs a bonding of a substrate to a support substrate, thereby improving the throughput in a bonding processing. The disclosed bonding system includes a loading/unloading station and a processing station. The processing station includes: an adhesive applying device configured to apply an adhesive... Agent:
20130316517 - Substrate dividing method: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within... Agent: Hamamatsu Photonics K.k.
20130316521 - Method for producing silicon wafer: The present invention provides a method for producing a silicon wafer including a step of, after growing the oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad... Agent: Shin-etsu Handotai Co., Ltd.
20130316520 - Methods of forming contact regions using sacrificial layers: Methods of patterning semiconductor contact materials on a crystalline semiconductor material which allow high-quality interfaces between the crystalline semiconductor material and the patterned semiconductor contact material are provided. Blanket layers of passivation material and sacrificial material are formed on the crystalline semiconductor material. A first contact opening is formed into... Agent: International Business Machines Corporation
20130316518 - Pecvd deposition of smooth silicon films: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon... Agent:
20130316519 - Techniques for forming a chalcogenide thin film using additive to a liquid-based chalcogenide precursor: Techniques for enhancing energy conversion efficiency in chalcogenide-based photovoltaic devices by improved grain structure and film morphology through addition of urea into a liquid-based precursor are provided. In one aspect, a method of forming a chalcogenide film includes the following steps. Metal chalcogenides are contacted in a liquid medium to... Agent: International Business Machines Corporation
20130316522 - Method for manufacturing soi wafer: The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral... Agent: Shin-etsu Handotai Co., Ltd.
20130316523 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device having a twin well structure is provided. The method includes ion-implanting of a first conductivity type impurity in a first region and a second region of a semiconductor substrate, the first and second regions being located adjacent to each other; forming a first... Agent: Canon Kabushiki Kaisha
20130316524 - Transistor of semiconductor device and method for manufacturing the same: Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work... Agent: Sk Hynix Inc.
20130316525 - Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same: A semiconductor device including a selectively nitrided gate insulating layer may be fabricated by a method that includes forming a first gate insulating layer on a substrate having a first region and a second region, performing a nitridation process on the first gate insulating layer, removing the first gate insulating... Agent: Samsung Electronics Co., Ltd.
20130316526 - Voltage switchable dielectric for die-level electrostatic discharge (esd) protection: A voltage-switchable dielectric layer may be employed on a die for electrostatic discharge (ESD) protection. The voltage-switchable dielectric layer functions as a dielectric layer between terminals of the die during normal operation of the die. When ESD events occur at the terminals of the die, a high voltage between the... Agent: Qualcomm Incorporated
20130316527 - Multi-chip-scale package: Some exemplary embodiments of a multi-chip semiconductor package utilizing a semiconductor substrate and related method for making such a semiconductor package have been disclosed. One exemplary embodiment comprises a first semiconductor device including, on a surface thereof, a first patterned dielectric layer, a conductive redistribution layer, a second patterned dielectric... Agent: International Rectifier Corporation
20130316528 - Interconnect barrier structure and method: A system and method for forming through substrate vias is provided. An embodiment comprises forming an opening in a substrate and lining the opening with a first barrier layer. The opening is filled with a conductive material and a second barrier layer is formed in contact with the conductive material.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130316529 - Method of forming a micro device transfer head with silicon electrode: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a... Agent:
20130316530 - Three-dimensional semiconductor architecture: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130316531 - Method for forming metal wire: Techniques for fabricating metal lines in semiconductor systems are disclosed. The metal may be tungsten. A hybrid Chemical Vapor Deposition (CVD)/Physical Vapor Deposition (PVD) process may be used. A layer of tungsten may be formed using CVD. This CVD layer may be formed over a barrier layer, such as, but... Agent:
20130316532 - Method of manufacturing a tungsten plug: The present invention relates to producing semiconductor integrated circuits, and particularly relates to a method for forming a tungsten plug. The invention protects the dielectric layer from getting damaged and avoids impact from CMP technology on the RC of devices by using an APF as the barrier layer while grinding,... Agent: Shanghai Huali Microelectronics Corporation
20130316533 - Method for removing native oxide and associated residue from a substrate: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia... Agent:
20130316534 - Fabrication method for circuit substrate having post-fed die side power supply connections: A circuit substrate uses post-fed top side power supply connections to provide improved routing flexibility and lower power supply voltage drop/power loss. Plated-through holes are used near the outside edges of the substrate to provide power supply connections to the top metal layers of the substrate adjacent to the die,... Agent: International Business Machines Corporation
20130316535 - Methods of forming semiconductor devices with metal silicide using pre-amorphization implants and devices so formed: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an... Agent:
20130316537 - Self-aligned nand flash select-gate wordlines for spacer double patterning: A method for double patterning is disclosed. In one embodiment the formation a pair of select gate wordlines on either side of a plurality of core wordlines begins by placing a spacer pattern around edges of a photoresist pattern is disclosed. The photoresist pattern is stripped away leaving the spacer... Agent: Spansion LLC
20130316536 - Semiconductor manufacturing device and semiconductor device manufacturing method: A semiconductor manufacturing apparatus according to an embodiment includes a stage capable of mounting a semiconductor substrate thereon, a first irradiation part configured to irradiate an etching beam onto the semiconductor substrate from a first direction inclined at an arbitrary angle with respect to a vertical direction to a surface... Agent:
20130316538 - Surface morphology generation and transfer by spalling: The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of... Agent: International Business Machines Corporation
20130316539 - Method for reducing morphological difference between n-doped and undoped polysilicon gates after etching: The present invention discloses a method for reducing the morphological difference between N-doped and undoped poly-silicon gates after etching, comprising the following sequential steps: depositing a hard mask layer on a substrate template having N-doped poly-silicon and undoped poly-silicon to form an N-doped poly-silicon hard mask layer and an undoped... Agent: Shanghai Huali Microelectronics Corporation
20130316540 - Method for removing oxide: A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3... Agent: United Microelectronics Corp.
20130316541 - Process for manufacturing a self-assembled injection monolayer: The invention relates to a process for manufacturing a self-assembled injection monolayer (SAM) on the surface of a metal supporting member, the SAM comprising molecules with a thiol end group. The manufacturing process of the invention comprises the following steps: a) depositing the SAM of desired molecules on a zone... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20130316542 - Spalling utilizing stressor layer portions: A method for spalling local areas of a base substrate utilizing at least one stressor layer portion which is located on a portion, but not all, of an uppermost surface of a base substrate. The method includes providing a base substrate having a uniform thickness and a planar uppermost surface... Agent: International Business Machines Corporation
20130316543 - Method and apparatus for substrate-mask alignment: A shadow masking device for use in the semiconductor industry includes self-aligning mechanical components that permit shadow masks to be exchanged while maintaining precise alignment with the target substrate. The misregistration between any two of the various layers in the formed structure can be kept to less than 40 microns.... Agent: International Business Machines Corporation
20130316544 - Method for replacing chlorine atoms on a film layer: The present invention discloses a method for replacing chlorine atoms on a film layer. More particularly, sufficient replacement ions for replacing the chlorine atoms are formed in a plasma process by reducing a volume ratio of a gas in a gas mixture (i.e. the film layer may be etched with... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd.
20130316545 - Film forming method: A method of forming a polyimide film on a surface of a substrate by dehydration condensation of a first monomer including a bifunctional acid anhydride and a second monomer including a bifunctional amine is disclosed. The method includes loading the substrate into a processing chamber, heating the substrate at a... Agent:
20130316546 - Methods of atomic layer deposition of hafnium oxide as gate dielectrics: In some embodiments, the present invention discloses a two-step deposition process for forming hafnium oxide gate dielectric, comprising an interface layer deposition followed by a bulk layer deposition. In the interface layer deposition process, water is used as an oxidizer precursor together with a hafnium-containing precursor. In the bulk layer... Agent: Intermolecular, Inc.
20130316547 - Mitigation of silicide formation on wafer bevel: A method for processing a wafer with a wafer bevel that surrounds a central region is provided. The wafer is placed in a bevel plasma processing chamber. A protective layer is deposited on the wafer bevel without depositing the protective layer over the central region. The wafer is removed from... Agent:
20130316548 - Single-shot semiconductor processing system and method having various irradiation patterns: High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece (170) is irradiated with a laser beam (164) to melt and recrystallize target areas of the surface exposed to the laser beam. The... Agent: The Trustees Of Columbia University In The City Of New York11/21/2013 > 96 patent applications in 69 patent subcategories.
20130309784 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo,... Agent: Magic Technologies, Inc.
20130309783 - Hydrogen-blocking film for ferroelectric capacitors: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at... Agent:
20130309782 - Phase change material cell with piezoelectric or ferroelectric stress inducer liner: An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and... Agent: International Business Machines Corporation
20130309785 - Rotational absorption spectra for semiconductor manufacturing process monitoring and control: Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of the process chamber to provide radiation at... Agent: Applied Materials, Inc.
20130309786 - Method for manufacturing image sensor module: An image sensor module includes a semiconductor chip, a transparent substrate, and metal lines. The semiconductor chip includes image sensors disposed in an image sensor region, pads electrically connected to the image sensors and disposed in a peripheral region defined along a periphery of the image sensor region, and through-electrodes... Agent: Sk Hynix Inc.
20130309787 - Manufacturing method of light emitting device: A manufacturing method of a light emitting device is provided. A first electrode is formed on a substrate. The first electrode includes a patterned conductive layer, and the patterned conductive layer includes an alloy containing a first metal and a second metal. An annealing process is performed on the first... Agent: Au Optronics Corporation
20130309789 - Batwing led with remote phosphor configuration: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens... Agent:
20130309788 - Leadframe for optoelectronic components and method for producing optoelectronic components: A leadframe for producing a number of optoelectronic components is specified. At least one mounting region includes a number of chip mounting areas for a number of semiconductor chips. Alongside the mounting region at at least one main area of the leadframe one or more of grooves for reducing mechanical... Agent: Osram Opto Semiconductors Gmbh
20130309790 - Systems and methods providing semiconductor light emitters: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens... Agent:
20130309792 - Light-emitting dies incorporating wavelength-conversion materials and related methods: In accordance with certain embodiments, light-emitting dies are fabricated on a substrate, separated from at least a portion of the substrate, and coated with a wavelength-conversion material.... Agent:
20130309791 - Semiconductor active matrix on buried insulator: A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials... Agent: International Business Machines Corporation
20130309794 - Light emitting device and method of manufacturing the same: A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be... Agent: Samsung Electronics Co., Ltd.
20130309793 - Organic light-emitting display having light blocking layer formed over pixel defining layer: An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film... Agent:
20130309795 - Method for manufacturing led chip with inclined side surface: A method for manufacturing an LED chip is disclosed wherein a substrate is provided. A first semi-conductor layer is formed on the substrate. A photoresist layer with an inverted truncated cone shape and a blocking layer with an inclined inner surface facing and surrounding the photoresist layer are formed on... Agent: Advanced Optoelectronic Technology, Inc.
20130309796 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well... Agent: Kabushiki Kaisha Toshiba
20130309797 - Method for manufacturing mems device: A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is... Agent: Lexvu Opto Microelectronics Technology (shanghai) Ltd
20130309798 - Method for manufacturing a thermoelectric device, especially intended to generate an electrical current in an automotive vehicle: The invention relates to a method for manufacturing a thermoelectric device, comprising a first circuit (1), called hot circuit, through which a first fluid can flow, and a second circuit (2), called cold circuit, through which a second fluid can flow at a temperature lower than that of the first... Agent:
20130309799 - Chemical bath deposition method for fabrication of semiconductor films through roll-to-roll processes: A chemical bath deposition method based on a new CBD reactor is presented to prepare different thin films on continuous flexible substrates in roll-to-roll processes. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method deposits thin films onto... Agent:
20130309800 - Peroxide blends for cross-linking ethylene vinyl acetate in an accelerated manner: The present invention relates to peroxide mixtures and in particular to peroxide mixtures that are suitable for the accelerated crosslinking of ethylene vinyl acetate.... Agent: United Initiators Gmbh & Co. Kg
20130309801 - Wafer-level process for fabricating photoelectric modules: A wafer-level process for fabricating a plurality of photoelectric modules is provided. The wafer-level process includes at least following procedures. Firstly, a wafer including a plurality of chips arranged in an array is provided. Next, a plurality of photoelectric devices are mounted on the chips. Next, a cover plate including... Agent: Centera Photonics Inc.
20130309802 - Solid-state image pickup apparatus, method of manufacturing the same, and image pickup apparatus: A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings... Agent:
20130309803 - Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process: An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on... Agent: Stmicroelectronics S.r.l.
20130309804 - Method of fabricating high efficiency cigs solar cells: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results... Agent: Intermolecular, Inc.
20130309805 - Method of fabricating high efficiency cigs solar cells: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results... Agent: Intermolecular, Inc.
20130309806 - Method for manufacturing light-absorbing layer and method for manufacturing solar cell using the same: Provided are a method for manufacturing a light-absorbing layer with excellent flatness of a surface thereof and high density and a method for manufacturing a solar cell using the same. A single target formed of a metallic compound is provided, and a metallic precursor thin film, which is a single... Agent: Electronics And Telecommunications Research Institute
20130309807 - Pattern forming method and manufacturing method of solar battery: A pattern forming method of forming a pattern by printing a pattern formation paste containing a pattern forming material and a binder component on a substrate having irregularities on a surface includes a foundation-layer forming step of forming a foundation layer by printing a foundation layer paste containing a same... Agent: Mitsubishi Electric Corporation
20130309808 - Method for manufacturing transistor: Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode.... Agent: Peking University Shenzhen Graduate School
20130309809 - Flexible electronic devices and related methods: A packaged electronic device includes a flexible circuit structure and a die. The flexible circuit structure includes a first structural layer and electrical conductors. The die is bonded to the flexible circuit structure by a flexible attachment layer. The die includes interconnects in electrical contact with die circuitry and extending... Agent: Premitec, Inc.
20130309810 - Multi-chip package with offset die stacking and method of making same: A semiconductor device has a plurality of stacked semiconductor dice mounted on a substrate. Each die has similar dimensions. Each die has a first plurality of bonding pads arranged along a bonding edge of the die. A first group of the dice are mounted to the substrate with the bonding... Agent: Mosaid Technologies Incorporated
20130309811 - Wafer level packaged gan power device and manufacturing method thereof: Disclosed are a GaN-based compound power semiconductor device and a manufacturing method thereof, in which on a GaN power semiconductor element, a contact pad is formed for flip-chip bonding, and a bonding pad of a module substrate to be mounted with the GaN power semiconductor element is formed with a... Agent: Electronics And Telecommunications Research Institute
20130309812 - Integrated chip package structure using ceramic substrate and method of manufacturing the same: An integrated chip package structure and method of manufacturing the same is by adhering dies on a ceramic substrate and forming a thin-film circuit layer on top of the dies and the ceramic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal... Agent: Megica Corporation
20130309813 - Embedded 3d interposer structure: A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130309814 - Lid attach process: Various methods of attaching a lid to an integrated circuit substrate are provided. In one aspect, a method of attaching a lid to a substrate that has an integrated circuit positioned thereon is provided. An adhesive is applied to the substrate and an indium film is applied to the integrated... Agent:
20130309815 - Isostress grid array and method of fabrication thereof: An electronic device package includes a substrate and wire columns arranged in groups about a neutral stress point of the substrate. The height of the wire columns is substantially uniform for the plural groups of wire columns, and a length of at least one of the wire columns is greater... Agent: Bae Systems Information And Electronic Systems Intergration Inc.
20130309816 - Semiconductor encapsulation method: A semiconductor encapsulation comprises a lead frame further comprising a chip carrier and a plurality of pins in adjacent to the chip carrier. A plurality of grooves opened from an upper surface of the chip carrier partially dividing the chip carrier into a plurality of chip mounting areas. A bottom... Agent: Alpha And Omega Semiconductor Incorporated
20130309818 - Manufacturing method of substrate for a semiconductor package, manufacturing method of semiconductor package, substrate for a semiconductor package and semiconductor package: A manufacturing method of a substrate for a semiconductor package includes a resist layer forming step to form a resist layer on a surface of a conductive substrate; an exposure step to expose the resist layer using a glass mask with a mask pattern including a transmission area, a light... Agent: Sumitomo Metal Mining Co., Ltd.
20130309817 - Method of fabricating package structure: A package structure includes a metal sheet having perforations; a semiconductor chip having an active surface and an opposite inactive surface, wherein the active surface has electrode pads thereon, conductive bumps are disposed on the electrode pads, the semiconductor chip is combined with the metal sheet via the inactive surface... Agent: Unimicron Technology Corporation
20130309819 - Array substrate for in-plane switching mode liquid crystal display device and fabricating method thereof: An array for an in-plane switching (IPS) mode liquid crystal display device includes a gate line formed on a substrate to extend in a first direction, a common line formed on the substrate to extend in the first direction, a data line formed to extend in a second direction, a... Agent: Lg Display Co., Ltd.
20130309820 - Floating body cell structures, devices including same, and methods for forming same: Floating body cell structures including an array of floating body cells disposed on a back gate and source regions and drain regions of the floating body cells spaced apart from the back gate. The floating body cells may each include a volume of semiconductive material having a channel region extending... Agent: Micron Technology, Inc.
20130309822 - Semiconductor device and method for manufacturing the same: An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130309821 - Thin film transistor array substrate for a display panel and a method for manufacturing a thin film transistor array substrate for a display panel: A method of manufacturing a thin film transistor array substrate includes forming a gate pattern on a substrate, forming a gate insulating film on the substrate, forming a source/drain pattern and a semiconductor pattern on the substrate, forming first, second, and third passivation films successively on the substrate. Over the... Agent: Samsung Display Co., Ltd.
20130309823 - Integrating schottky diode into power mosfet: A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield electrode pickup trenches in a termination area outside the active area. The gate runner/termination trenches include one or more trenches that define a mesa located outside an active... Agent: Alpha And Omega Semiconductor Incorporated
20130309824 - Method of manufacturing semiconductor device: Provided is a method of manufacturing a semiconductor device. The method may include etching a first conductive type semiconductor substrate to form a first trench, forming a second trench extending from the first trench, diffusing impurities into inner walls of the second trench to form a second conductive type impurity... Agent: Electronics And Telecommunications Research Institute
20130309825 - Method of manufacturing semiconductor device having multi-channels: A method for manufacturing a semiconductor device having multi-channels is provided. The method includes etching an active region of a gate region and a device isolation layer of the gate to form a gate recess, forming a first gate buried in a lower portion of the gate recess, forming an... Agent: Sk Hynix Inc.
20130309826 - Radical oxidation process for fabricating a nonvolatile charge trap memory device: A method for fabricating a nonvolatile charge trap memory device is described. The method includes subjecting a substrate to a first oxidation process to form a tunnel oxide layer overlying a polysilicon channel, and forming over the tunnel oxide layer a multi-layer charge storing layer comprising an oxygen-rich, first layer... Agent: Cypress Semiconductor Corporation
20130309828 - Manufacturing method of semiconductor device: Provided is a semiconductor device manufacturing method, comprising forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and has a higher solid solubility for impurities included in the first semiconductor layer than the first semiconductor layer; annealing the first sacrificial layer and the... Agent: Advanced Power Device Research Association
20130309827 - Method for manufacturing a transistor for preventing or reducing short channel effect: A transistor for preventing or reducing short channel effect includes a substrate; a gate stack disposed over the substrate; a first junction region disposed on the substrate at a first side surface of the gate stack, said first junction layer being formed of an epitaxial layer; a trench formed within... Agent: Sk Hynix Inc.
20130309829 - Method of forming a semiconductor device: A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130309830 - Self-aligned iii-v mosfet fabrication with in-situ iii-v epitaxy and in-situ metal epitaxy and contact formation: A method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions.... Agent: International Business Machines Corporation
20130309831 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device, which comprises: providing a semiconductor substrate; forming a dummy gate structure and a spacer surrounding the dummy gate structure on the semiconductor substrate; forming source/drain regions on both sides of the gate structure within the semiconductor substrate using the dummy gate structure and... Agent:
20130309833 - Decoupling composite capacitor in a semiconductor wafer: According to an exemplary embodiment, a method for fabricating a decoupling composite capacitor in a wafer that includes a dielectric region overlying a substrate includes forming a through-wafer via in the dielectric region and the substrate. The through-wafer via includes a through-wafer via insulator covering a sidewall and a bottom... Agent: Broadcom Corporation
20130309832 - Mos capacitors with a finfet process: Methods for capacitor fabrication include doping a capacitor region of a semiconductor layer in a semiconductor-on-insulator substrate; partially etching the semiconductor layer to produce a first terminal layer comprising doped semiconductor fins on a remaining base of doped semiconductor; forming a dielectric layer over the first terminal layer; and forming... Agent: International Business Machines Corporation
20130309834 - Method of semiconductor integrated circuit fabrication: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device, patterning a first hard mask to form a first recess in a high-resistor (Hi-R) stack, removing the first hard mask, forming a second recess in the Hi-R stack, forming a second hard... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130309835 - Retrograde substrate for deep trench capacitors: A method for forming a semiconductor device includes forming a deep trench in a substrate having a first doped portion to a first depth and a second doped portion below the first depth, the deep trench extending below the first depth. A region around the deep trench is doped to... Agent:
20130309836 - Semiconductor device and method for manufacturing the same: A semiconductor device includes an isolation layer formed on a semiconductor substrate; an active region defined by the isolation layer; at least one gate line formed to overlap with the active region; at least one first active tab formed on a first interface of the active region which overlaps with... Agent: Sk Hynix Inc.
20130309838 - Methods for fabricating finfet integrated circuits on bulk semiconductor substrates: Methods are provided for fabricating FinFET integrated circuits on bulk semiconductor substrates. In accordance with one embodiment a patterned hard mask that defines locations of a regular array of a plurality of fins is formed overlying a semiconductor substrate. Portions of the patterned hard mask are removed using a cut... Agent:
20130309839 - Methods of forming semiconductor devices having recesses: Fin-FET (fin field-effect transistor) devices and methods of fabrication are disclosed. The fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by forming shallow trench isolation structures, using a pair... Agent: Micron Technology, Inc.
20130309837 - Preventing shorting of adjacent devices: Embodiments of the present invention provide a method of preventing electrical shorting of adjacent semiconductor devices. The method includes forming a plurality of fins of a plurality of field-effect-transistors on a substrate; forming at least one barrier structure between a first and a second fin of the plurality of fins;... Agent: International Business Machines Corporation
20130309840 - Combination of a substrate and a wafer: The invention pertains to a combination of a substrate and a wafer, wherein the substrate and the wafer are arranged parallel to one another and bonded together with the aid of an adhesive layer situated between the substrate and the wafer, and wherein the adhesive is chosen such that its... Agent:
20130309842 - Method for manufacturing soi wafer: The object of the present invention is to provide a method for reducing defects, which are incurred on a surface of and inside a single-crystal silicon layer by a bonding method, by a treatment at a relatively low temperature over a relatively short duration. More specifically, the present invention relates... Agent: Shin-etsu Chemical Co., Ltd.
20130309841 - Method for molecular bonding of silicon and glass substrates: The present invention concerns a method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the... Agent: Soitec
20130309843 - Sos substrate having low defect density in vicinity of interface: A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have... Agent: Shin-etsu Chemical Co., Ltd.
20130309844 - Laser beam processing method for wafer: A laser beam processing method for a wafer includes a first processed groove forming step in which a laser beam is radiated along a planned dividing line so that the overlapping rate of condensed beam spots is equal to or less than 95%, to thereby form a first laser beam... Agent: Disco Corporation
20130309845 - Method of processing substrate: A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.... Agent: United Micro Electronics Corp.
20130309848 - High throughput semiconductor deposition system: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials.... Agent: Alliance For Sustainable Energy, LLC
20130309846 - Methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom: Disclosed herein are various methods of forming a silicon seed layer and layers of silicon and silicon-containing material therefrom. In one example, the method includes forming a layer of silicon dioxide above a structure, converting at least a portion of the layer of silicon dioxide into a silicon-salt layer and... Agent: Globalfoundries Inc.
20130309847 - Methods of forming finfet devices with alternative channel materials: One illustrative method disclosed herein involves performing a first etching process through a patterned hard mask layer to define a plurality of spaced-apart trenches in a substrate that defines a first portion of a fin for the device, forming a layer of insulating material in the trenches and performing a... Agent: Globalfoundries Inc.
20130309849 - Method for fabricating nonvolatile memory device: A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by... Agent:
20130309850 - Method of fabricating high efficiency cigs solar cells: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results... Agent:
20130309851 - Silicon carbide semiconductor device and manufacturing method therefor: In the manufacture of a silicon carbide semiconductor device having a termination region being a JTE region or FLR, the margin of the amount of etching for removing a damage layer formed in the surface of the termination region is enlarged. A silicon carbide semiconductor device has a termination region... Agent: Mitsubishi Electric Corporation
20130309852 - Borderless contact for an aluminum-containing gate: An aluminum-containing material is employed to form replacement gate electrodes. A contact-level dielectric material layer is formed above a planarization dielectric layer in which the replacement gate electrodes are embedded. At least one contact via cavity is formed through the contact-level dielectric layer. Any portion of the replacement gate electrodes... Agent: International Business Machines Corporation
20130309854 - Method for manufacturing a substrate provided with different active areas and with planar and three-dimensional transistors: A substrate is successively provided with a support, an electrically insulating layer, and a semi-conductor material layer. A first protective mask completely covers a second area of the semi-conductor material layer and leaves a first area of the semi-conductor material layer uncovered. A second etching mask partially covers the first... Agent:
20130309853 - Methods for forming a semiconductor device using masks with non-metallic portions: A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the... Agent:
20130309855 - Methods for reoxidizing an oxide and for fabricating semiconductor devices: Oxidation methods and resulting structures including providing an oxide layer on a substrate and then reoxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over diffusion regions, such as source and drain regions,... Agent:
20130309856 - Etch resistant barrier for replacement gate integration: Semiconductor devices and methods of their fabrication are disclosed. One method includes forming a semiconductor device structure including a plurality of dummy gates and a dielectric gap filling material with a pre-determined aspect ratio that is between the dummy gates. An etch resistant nitride layer is applied above the dielectric... Agent: International Business Machines Corporation
20130309857 - Mask free protection of work function material portions in wide replacement gate electrodes: In a replacement gate scheme, after formation of a gate dielectric layer, a work function material layer completely fills a narrow gate trench, while not filling a wide gate trench. A dielectric material layer is deposited and planarized over the work function material layer, and is subsequently recessed to form... Agent: International Business Machines Corporation
20130309858 - Method of forming a plurality of spaced features: A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask... Agent: Micron Technology, Inc.
20130309859 - Silicon carbide semiconductor device and method for producing the same: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating... Agent: Nissan Motor Co., Ltd.
20130309860 - Semiconductor wafer plating bus and method for forming: A semiconductor wafer includes a die, an edge seal, a bond pad, a plating bus, and trace. The die is adjacent to a saw street. The edge seal is along a perimeter of the die and includes a conductive layer formed in a last interconnect layer of the die. The... Agent: Freescale Semiconductor, Inc.
20130309861 - Semiconductor constructions and methods of planarizing across a plurality of electrically conductive posts: Some embodiments include a planarization method. A liner is formed across a semiconductor substrate and along posts that extending upwardly from the substrate. Organic fill material is formed over the liner and between the posts. A planarized surface is formed which extends across the posts and across one or both... Agent: Micron Technology, Inc.
20130309862 - Method for manufacturing sn alloy bump: Provided is a method for manufacturing an Sn alloy bump, wherein composition of the Sn alloy bump can be readily controlled. The method for manufacturing an Sn alloy bump formed of an alloy composed of Sn and other one or more types of metals has a step of forming an... Agent:
20130309863 - Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition: Disclosed herein are various methods of forming copper-based conductive structures on integrated circuit devices. In one example, the method includes forming a trench/via in a layer of insulating material, performing a deposition process to form an as-deposited copper-based seed layer above the layer of insulating material in the trench/via, wherein... Agent:
20130309864 - Semiconductor structure and method for making same: One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a... Agent: Infineon Technologies Ag
20130309865 - Method of manufacturing substrate for mounting electronic device: There is provided a method of manufacturing a substrate for mounting an electronic device. The method includes disposing a protective layer on a surface of the substrate except for an edge portion thereof . An oxide film is disposed on the entirety of the surface of the substrate except for... Agent:
20130309866 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device according to an embodiment, includes forming a wiring in a surface of a first insulating film on a semiconductor substrate, exposing the first insulating film in whose surface the wiring is formed to a plasma containing a rare gas so as to form... Agent:
20130309867 - Lateral semiconductor device and manufacturing method for the same: A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide... Agent: Toyota Jidosha Kabushiki Kaisha
20130309869 - Lithography mask and method of manufacturing semiconductor device: A lithography mask is disclosed. The lithography mask is for use with an exposure apparatus which forms an unpatterned first region and a patterned second region that includes groups of desired patterns in a photosensitive layer. The lithography mask includes a transparent substrate; and a patterned light blocking layer that... Agent: Kabushiki Kaisha Toshiba
20130309868 - Methods for forming an integrated circuit with straightened recess profile: Methods are provided for forming an integrated circuit. In an embodiment, the method includes forming a sacrificial mandrel overlying a base substrate. Sidewall spacers are formed adjacent sidewalls of the sacrificial mandrel. The sidewall spacers have a lower portion that is proximal to the base substrate, and the lower portion... Agent: Globalfoundries Inc.
20130309870 - Methods of reducing substrate dislocation during gapfill processing: Methods of reducing dislocation in a semiconductor substrate between asymmetrical trenches are described. The methods may include etching a plurality of trenches on a semiconductor substrate and may include two adjacent trenches of unequal width separated by an unetched portion of the substrate. The methods may include forming a layer... Agent: Applied Materials, Inc.
20130309871 - Methods of forming a masking pattern for integrated circuits: In some embodiments, methods for forming a masking pattern for an integrated circuit are disclosed. In one embodiment, mandrels defining a first pattern are formed in a first masking layer over a target layer. A second masking layer is deposited to at least partially fill spaces of the first pattern.... Agent: Micron Technology, Inc.
20130309872 - Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.... Agent: Tel Epion Inc.
20130309873 - Method of selectively etching a three-dimensional structure: A method of selectively etching a three-dimensional (3-D) structure includes generating a plasma in contact with the 3-D structure, and illuminating a designated portion of the 3-D structure with a laser beam while the plasma is being generated. Nonilluminated portions of the 3-D structure are etched at a first etch... Agent:
20130309874 - Method and apparatus for liquid treatment of wafer-shaped articles: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a... Agent: Lam Research Ag
20130309875 - Interface treatment method for germanium-based device: Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on ther surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a... Agent: Peking University
20130309876 - Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus: A method of manufacturing a semiconductor device includes: housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber; wherein in forming the metal nitride... Agent: Hitachi Kokusai Electric Inc.
20130309877 - Silicon carbide semiconductor device and method for producing the same: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating... Agent: Nissan Motor Co., Ltd.Previous industry: Chemistry: analytical and immunological testing
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