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Semiconductor device manufacturing: process

20130115719 - Method for manufacturing integrated circuit structure with magnetoresistance component: A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer.... Agent: Voltafield Technology Corporation

20130115720 - Surface measurement: A method and apparatus for determining grain size of a surface. A light source is directed at the surface. Reflected light from the surface is detected. A peak surface grain wavelength is determined from the reflected light. The peak surface grain wavelength is converted to a grain size. Grain size... Agent:

20130115721 - Epitaxial film growth in retrograde wells for semiconductor devices: A method of fabricating a semiconductor device. A substrate is provided and includes a dielectric layer and a mask layer, which is patterned and developed. A plurality of trenches is created within the dielectric material by a retrograde etching process. The plurality of trenches is subsequently overfilled with a material... Agent: Tokyo Electron Limited

20130115722 - Method for manufacturing a semiconductor device: The manufacturing efficiency of semiconductor devices is improved. A plurality of external terminals (leads) electrically coupled with a semiconductor chip, and contact regions of a plurality of terminals (test terminals) are brought into contact with each other, respectively. This establishes an electrical coupling between the semiconductor chip and a test... Agent: Renesas Electronics Corporation

20130115723 - Method of manufacturing semiconductor device and semiconductor manufacturing system: In a method of manufacturing a semiconductor device using an electron beam lithography apparatus configured to emit an electron beam to perform lithography of a pattern, processing including pattern formation with the electron beam lithography apparatus is performed on a wafer, and an electric characteristic of the thus manufactured semiconductor... Agent: Advantest Corporation

20130115724 - Method of fabricating an integrated orifice plate and cap structure: In an embodiment, a method of fabricating an integrated orifice plate and cap structure includes forming an orifice bore on the front side of a product wafer, coating side walls of the orifice bore with a protective material, grinding the product wafer from its back side to a final thickness,... Agent:

20130115725 - Light emitting diode having a transparent substrate: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface... Agent: Epistar Corporation

20130115726 - Crystallization apparatus, crystallization method, organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus: A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization... Agent: Samsung Mobile Display Co., Ltd.

20130115727 - Etching composition and method of manufacturing a display substrate using the system: An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H3PO4) of about 40% by weight to about 70% by weight, nitric acid (HNO3) of about 5% by weight to about 15% by weight, acetic acid (CH3COOH)... Agent: Samsung Display Co., Ltd.

20130115728 - Fusing method of substrate layer, manufacturing method of microfluidic chip and fusing apparatus of substrate layer: Provided is a fusing method of a substrate layer including: treating a joining surface of a substrate layer formed from a resin using an organic solvent having solubility with respect to the resin; and heating the treated substrate layer at less than a glass transition temperature or a softening point... Agent: Sony Corporation

20130115729 - Lithographic fabrication process for a pressure sensor: Lithographic fabrication of a pressure sensor (30) for environments such as vehicle tires is described. The sensor has a first wafer substrate (32) with first and second planar surfaces on opposing sides. CMOS circuitry (34) is deposited on the first planar surface. A layer of passivation material is deposited on... Agent: Precision Mechatronics Pty Ltd

20130115730 - Low-temperature wafer level processing for mems devices: It would be beneficial to integrate MEMS devices with silicon CMOS electronics, package them in controlled environments, e.g. vacuum for MEMS resonators, and provide industry standard electrical interconnections such as solder bumps. However, to do so requires through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the... Agent: The Royal Institution For The Advancement Of Learning / Mcgill University

20130115731 - Method of manufacturing radiation detector: Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied... Agent: Shimadzu Corporation

20130115732 - Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer: Multi-crystalline silicon processing techniques are provided. In one aspect, a method for roughening a multi-crystalline silicon surface is provided. The method includes the following steps. The multi-crystalline silicon surface is coated with a diblock copolymer. The diblock copolymer is annealed to form nanopores therein. The multi-crystalline silicon surface is etched... Agent: International Business Machines Corporation

20130115733 - Etchant composition and method for manufacturing thin film transistor using the same: Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2O8, an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.... Agent: Samsung Display Co., Ltd.

20130115734 - Methods of manufacturing semiconductor device assemblies including face-to-face semiconductor dice: Methods of manufacturing semiconductor device assemblies include attaching a back side of a first semiconductor die to a substrate and structurally and electrically coupling a first end of laterally extending conductive elements to conductive terminals on or in a surface of the substrate. Second ends of the laterally extending conductive... Agent: Micron Technology, Inc.

20130115735 - Apparatus and methods for molded underfills in flip chip packaging: Methods and apparatus for a forming molded underfills. A method is disclosed including loading a flip chip substrate into a selected one of the upper mold chase and lower mold chase of a mold press at a first temperature; positioning a molded underfill material in the at least one of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130115736 - Method for separating a plurality of dies and a processing device for separating a plurality of dies: A method for separating a plurality of dies is provided. The method may include: selectively removing one or more portions from a carrier including a plurality of dies, for separating the plurality of dies along the selectively removed one or more portions, wherein the one or more portions are located... Agent: Infineon Technologies Ag

20130115737 - Method of manufacturing a semiconductor device with outer leads having a lead-free plating: A semiconductor device has a tab having a semiconductor chip fixed thereto, a plurality of inner leads, a plurality of outer leads formed integrally with the inner leads, a plurality of wires coupling the electrode pads of the semiconductor chip to the inner leads, and a molded body having the... Agent: Renesas Electronics Corporation

20130115738 - Packaging substrate and fabrication method thereof: A method for fabricating a packaging substrate includes: providing a carrier having a first metal layer and a second metal layer formed on the first metal layer; forming a first circuit layer on the second metal layer and forming a separating portion on an edge of the second metal layer... Agent: Siliconware Precision Industries Co., Ltd.

20130115739 - Systems and methods integrating trench-gated thyristor with trench-gated rectifier: An integrated trench-MOS-controlled-thyristor plus trench gated diode combination, in which the trenches are preferably formed at the same time. A backside polarity reversal process permits a backside p+ region in the thyristor areas, and only a backside n+ region in the diode areas (for an n-type device). This is particularly... Agent: Pakal Technologies, LLC

20130115740 - Manufacturing method of thin film transitor: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material.... Agent: Snu R&db Foundation

20130115741 - Process to remove ni and pt residues for niptsi applications using aqua regia with microwave assisted heating: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution... Agent: Intermolecular, Inc.

20130115742 - Method of manufacturing semiconductor device using stress memorization technique: The manufacturing a semiconductor device includes providing a substrate supporting a gate electrode, amorphizing and doping the source/drain regions located on both sides of the gate electrode by performing a pre-amorphization implant (PAI) process and implanting C or N into the source/drain regions in or separately from the PAI process,... Agent:

20130115743 - Semiconductor device and method for forming the same: A method for forming a semiconductor device is provided, wherein a step of forming an S/D region comprises: determining an interface region comprising an active region of a partial width abutting an isolation region, and forming an auxiliary layer covering the interface region; removing a semiconductor substrate of a partial... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20130115746 - Method for fabricating a vertical ldmos device: A vertically arranged laterally diffused metal-oxide-semiconductor (LDMOS) device comprises a trench extending into a semiconductor body toward a semiconductor substrate. The trench includes sidewalls, a bottom portion connecting the sidewalls, a dielectric material lining the trench and a diffusion agent layer lining the dielectric material. A lightly doped drain region... Agent: International Rectifier Corporation

20130115745 - Methods of manufacturing semiconductor devices including device isolation trenches self-aligned to gate trenches: Methods of manufacturing a semiconductor device can be provided by forming a structure including a plurality of gate trenches that extend in a first direction and a mold layer having openings and that extend in the first direction on a substrate. Filling layers can be formed to fill the openings... Agent:

20130115747 - Trench gate semiconductor device and the method of manufacturing the same: A trench gate semiconductor device is disclosed which has a trench gate structure including an insulator in the upper portion of a first trench, the insulator being on a gate electrode; a source region having a lower end surface positioned lower than the upper surface of the gate electrode; a... Agent: Fuji Electric Co., Ltd.

20130115744 - Vertical gate ldmos device: A method of fabricating a vertical gate region in LDMOS transistor includes depositing a first masking layer on an n-well region implanted on a substrate, patterning the first masking layer to define an area, depositing a second masking layer over the area, etching through the second masking layer in a... Agent: Volterra Semiconductor Corporation

20130115748 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes forming a mold layer over a substrate, wherein the mold layer includes a first sacrificial layer and a second sacrificial layer that are stacked, forming an insulation layer pattern that has an etch selectivity to the first sacrificial layer and the second... Agent:

20130115749 - Semiconductor package having passive device and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, a first capacitor, a first protective layer, a first metal layer and a second protective layer. The substrate has at least one via structure. The first capacitor is disposed... Agent:

20130115750 - Blocking layers for leakage current reduction in dram devices: A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high k phase of a subsequently deposited dielectric layer. The high k dielectric layer comprises a doped material that can be crystallized... Agent: Intermolecular, Inc.

20130115751 - Boron-containing hydrogen silsesquioxane polymer, integrated circuit device formed using the same, and associated methods: A composition includes a boron-containing hydrogen silsesquioxane polymer having a structure that includes: silicon-oxygen-silicon units, and oxygen-boron-oxygen linkages in which the boron is trivalent, wherein two silicon-oxygen-silicon units are covalently bound by an oxygen-boron-oxygen linkage therebetween.... Agent: Cheil Industries, Inc.

20130115752 - Pick-and-place tool for packaging process: An apparatus includes a guide ring, and a bond head installed on the guide ring. The bond head is configured to move in loops along the guide ring. The bond head is configured to pick up dies and place the dies during the loops... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130115753 - Method of manufacturing thin film-bonded substrate: GaN substrate from a Ga surface thereof and thereby forming a first ion implantation layer, bonding a first heterogeneous substrate onto the Ga surface of the first GaN substrate, cleaving the first GaN substrate along the first ion implantation layer and thereby leaving a second GaN substrate on the first... Agent: Samsung Corning Precision Materials Co., Ltd.

20130115754 - Micro machining method for a substrate on an underlay: A micro machining method includes utilizing a polymer as an intermediate adhesion layer, and bonding a underlay with a substrate by pressure bonding, thinning the substrate and deep-etching it to form through holes, backfilling the through holes and deep-etching the substrate again to form a plating hole, plating metal in... Agent:

20130115755 - Method of separating semiconductor die using material modification: A method for separating semiconductor die includes forming a porous region on a semiconductor wafer and separating the die at the porous region using mechanical or other means.... Agent: Infineon Technologies Ag

20130115756 - Processing method for semiconductor wafer having passivation film on the front side thereof: A semiconductor wafer processing method forms a plurality of wafer dividing grooves respectively along a plurality of crossing streets formed on the front side of a semiconductor substrate of a semiconductor wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed. The semiconductor wafer... Agent: Disco Corporation

20130115757 - Method for separating a plurality of dies and a processing device for separating a plurality of dies: A method for separating a plurality of dies is provided, the method including: defining one or more portions to be removed from a carrier including a plurality of dies by chemically changing the properties of the one or more portions to be removed located between the dies; performing a front-end-of-line... Agent: Infineon Technologies Ag

20130115758 - Method for manufacturing silicon carbide schottky barrier diode: The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film... Agent: Hyundai Motor Company

20130115759 - Methods of fabricating semiconductor devices: Provided are methods of fabricating a semiconductor device that include providing a substrate that includes a first region having a gate pattern and a second region having a first trench and an insulating layer that fills the first trench. A portion of a sidewall of the first trench is exposed... Agent: Samsung Electronics Co., Ltd.

20130115760 - Method of forming a thin layer structure: A thin layer structure includes a substrate, a blocking pattern that exposes part of an upper surface of the substrate, and a single crystalline semiconductor layer on the part of the upper surface of the substrate exposed by the pattern and in which all outer surfaces of the single crystalline... Agent: Samsung Electronics Co., Ltd.

20130115762 - Method for doping a semiconductor material: A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.... Agent: Apollon Solar

20130115761 - Methods of forming a semiconductor device: Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The... Agent:

20130115763 - Methods for forming doped silicon oxide thin films: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor... Agent: Asm International. N.v.

20130115764 - Substrate processing system and method: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such... Agent: Intevac, Inc.

20130115765 - Semiconductor device with buffer layer: A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.... Agent: Siliconix Technology C.v.ir

20130115766 - Method of manufacturing semiconductor device: According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a tunnel insulating film and a first conductive film are formed on a semiconductor layer. A trench is formed. A first sacrifice film is buried in the trench. A second sacrifice film having density... Agent:

20130115767 - Metal alloy cap integration: A metal interconnect structure, which includes metal alloy capping layers, and a method of manufacturing the same. The originally deposited alloy capping layer element within the interconnect features will diffuse into and segregate onto top surface of the metal interconnect. The metal alloy capping material is deposited on a reflowed... Agent: International Business Machines Corporation

20130115768 - Methods for depositing nickel films and for making nickel silicide and nickel germanide: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal... Agent:

20130115769 - Method for forming an air gap around a through-silicon via: Semiconductor devices with air gaps around the through-silicon via are formed. Embodiments include forming a first cavity in a substrate, filling the first cavity with a sacrificial material, forming a second cavity in the substrate, through the sacrificial material, by removing a portion of the sacrificial material and a portion... Agent: Globalfounderies Singapore Pte. Ltd.

20130115770 - Etching composition, method of forming a metal pattern and method of manufacturing a display substrate: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching... Agent:

20130115771 - Method of making semiconductor device: One or more embodiments may include a method of making a semiconductor structure, comprising: forming a first opening partially through a semiconductor substrate; forming a first dielectric layer over a sidewall surface of the first opening; and forming a second opening partially through a semiconductor substrate, the second opening being... Agent:

20130115772 - Etching method: The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas is supplied into a processing... Agent: Spp Technologies Co., Ltd.

20130115774 - Method for chemical planarization and chemical planarization apparatus: According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger... Agent:

20130115773 - Prevention of ild loss in replacement gate technologies by surface treatmen: When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, pronounced loss of the interlayer dielectric material may be avoided by inserting at least one surface modification process, for instance in the form of a nitridation process. In this manner, leakage paths caused by... Agent: Globalfoundries Inc.

20130115775 - Method of forming wide trenches using a sacrificial silicon slab: A method of forming an encapsulated wide trench includes providing a silicon on oxide insulator (SOI) wafer, defining a first side of a first sacrificial silicon slab by etching a first trench in a silicon layer of the SOI wafer, defining a second side of the first sacrificial silicon slab... Agent: Robert Bosch Gmbh

20130115778 - Dry etch processes: Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO2, HfBxOy, ZrO2, ZrBxOy, to a plasma comprising BCl3 and argon to etch away said at least part of the film. Certain other... Agent: Applied Materials, Inc.

20130115777 - Manufacturing method for semiconductor structures: A manufacturing method for semiconductor structures includes providing a substrate having a first region and a second region defined thereon, forming a plurality of first patterns in the first region and at least a second pattern in the second region, forming a plurality of first spacers respectively on sidewalls of... Agent:

20130115776 - Pressure control valve assembly of plasma processing chamber and rapid alternating process: A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the... Agent: Lam Research Corporation

20130115779 - Conical sleeves for reactors: In some embodiments, the present invention discloses sealing mechanisms for generating site isolated regions on a substrate, allowing combinatorial processing without cross contamination between regions. The sealing mechanism can include a thin sharp edge ring for pressing on the substrate surface with small contact area. The small sealing area can... Agent: Intermolecular, Inc.

20130115780 - Plasma processing apparatus and plasma processing method: A plasma processing apparatus has a circular chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member, a gas supply pipe for introducing gas into the inside of the chamber, a coil provided in the vicinity of the chamber, a high-frequency power supply... Agent: Panasonic Corporation

20130115781 - Plasma processing apparatus and plasma processing method: A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed.... Agent: Tokyo Electron Limited

20130115782 - Process for removing material from substrates: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially... Agent: Tel Fsi, Inc.

20130115783 - Method for depositing cyclic thin film: Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber... Agent: Eugene Technology Co., Ltd.

20130109108 - Method for producing zinc oxide on gallium nitride and application thereof: The present invention relates to a method for producing zinc oxide on gallium nitride and application thereof, and particularly relates to a method for producing zinc oxide on gallium nitride by hydrothermal method and a method for recycling substrates by the zinc oxide.... Agent: National Taiwan University

20130109109 - Substrate heat treating apparatus, temperature control method of substrate heat treating apparatus, manufacturing method of semiconductor device, temperature control program of substrate heat treating apparatus, and recording medium: To provide a temperature control method capable of equivalently maintaining qualities of substrates even when treated substrates are continuously carried in a treatment container in the case in which activation annealing treatment is performed by an electron impact heating method. The temperature control method of a substrate heat treating apparatus... Agent: Canon Anelva Corporation

20130109110 - Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor device: A silicon carbide substrate is made of silicon carbide. In the silicon carbide substrate, a normal line of one main surface of the silicon carbide substrate and a normal line of a {03-38} plane form an angle of 0.5° or smaller in an orthogonal projection to a plane including a... Agent: Sumitomo Electric Industries, Ltd.

20130109111 - Method to perform electrical testing and assembly of electronic devices: A method performs electrical testing and assembly of an electronic device on a wafer and comprising a pad made in an oxide layer covered by a passivation layer. The method includes connecting the electronic device to a testing apparatus; providing said electronic device with a metallization layer extending on the... Agent: Stmicroelectronics S.r.l.

20130109112 - Etch rate detection for photomask etching: The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss. In one embodiment, the method includes etching a first substrate through a... Agent:

20130109113 - Method of manufacturing an ink-jet printhead: A method of manufacturing an ink jet printhead includes: providing a silicon substrate including active ejecting elements; providing a hydraulic structure layer; providing a silicon orifice plate having a plurality of nozzles for ejection of said ink; and assembling the silicon substrate with said hydraulic structure layer and said silicon... Agent: Olivetti S. P.a

20130109114 - Method of manufacturing array substrate for liquid crystal display device: A method of manufacturing an array substrate for a liquid crystal display device includes forming gate and data lines crossing each other on a substrate; forming a thin film transistor connected to the gate and data lines; forming a passivation layer on the substrate having the gate lines, data lines... Agent: Lg Display Co., Ltd.

20130109115 - Method and jig for manufacturing semiconductor device: According to an embodiment, a method for manufacturing a semiconductor device includes steps of enveloping a semiconductor chip attached to a lead frame with a resin and mounting a film-like member in a pocket provided in a base portion of a jig. The method further includes steps of making the... Agent: Kabushiki Kaisha Toshiba

20130109116 - Surface flaw modification for strengthening of glass articles: Disclosed are controlled chemical etching processes used to modify the geometry of surface flaws in thin glass substrates and glass substrate assemblies formed therefrom, and in particular glass substrates suitable for the manufacture of active matrix displays that are essentially free of alkali metal oxides such as Na2O, K2O and... Agent:

20130109120 - Array substrate for luquid crystal display device and method of fabricating the same: An array substrate for an LCD device includes a gate line crossing a data line to define a pixel region. A thin film transistor (TFT) includes a gate electrode connected to the gate line, insulating and active layers on the gate electrode, a source electrode connected to the data line,... Agent: Lg Display Co., Ltd.

20130109118 - Method of manufacturing organic electroluminescence display device: Provided is a method of manufacturing an organic electroluminescence display device including: forming, on a first pixel electrode and a second pixel electrode which are formed on a substrate, a charge injection transport layer which is formed of a charge injection transport material using a forming method capable of covering... Agent: Canon Kabushiki Kaisha

20130109117 - Methods of forming organic light emitting structures and methods of manufacturing organic light emitting display devices: In a method of forming an organic light emitting structure, a plurality of first electrodes spaced apart from each other is formed on a lower substrate. A first organic layer covering the first electrodes is formed on the lower substrate. A preliminary pixel defining layer is formed on the first... Agent: Samsung Display Co., Ltd.

20130109119 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally... Agent: Samsung Display Co., Ltd.

20130109121 - Method of fabricating semiconductor substrate and method of fabricating light emitting device: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor... Agent: Seoul Opto Device Co., Ltd.

20130109123 - Diffusing agent composition and method of forming impurity diffusion layer: Provided is a diffusing agent composition used for the printing of a dopant component on a semiconductor substrate, the diffusing agent composition including a silicon compound (A), a dopant component (B), and a non-dopant metal component (C). Among these components, the content of Na contained as the non-dopant metal component... Agent: Tokyo Ohka Kogyo Co., Ltd.

20130109122 - Laser crystallization and polycrystal efficiency improvement for thin film solar: Apparatus and methods of thermally processing semiconductor substrates are disclosed. Aspects of the apparatus include a source of intense radiation and a rotating energy distributor that distributes the intense radiation to a rectifier. The rectifier directs the radiation toward the substrate. Aspects of the method include using a rotating energy... Agent:

20130109124 - Methods of making a transparent layer and a photovoltaic device: In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on... Agent: General Electric Company

20130109125 - Integrated back-sheet for back contact photovoltaic module: A process for making a back-contact solar cell module is provided. Electrically conductive wires of an integrated back-sheet are physically and electrically attached to the back contacts of the solar cells of a solar cell array through openings in a polymeric interlayer dielectric layer using an electrically conductive binder before... Agent: E I Du Pont De Nemours And Company

20130109126 - Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers: Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline... Agent: Intermolecular, Inc.

20130109128 - Manufacturing method for photovoltaic power device and manufacturing apparatus for photovoltaic power device: In order to form a texture structure of inverse pyramid concavities with high speed and accuracy, when a reflection preventing texture is formed on a surface of a photovoltaic power device by laser patterning of an etching resistance film and wet etching, a plurality of laser apertures are machined in... Agent: Mitsubishi Electric Corporation

20130109127 - Method for making solar cell: A method for making a solar cell includes following steps. A silicon substrate is provided, and the silicon substrate has a first surface and a second surface opposite to the first surface. A patterned mask layer is located on the second surface, and the patterned mask layer includes a number... Agent: Tsinghua University

20130109129 - Solid-state imaging device, method of producing the same, and camera: To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is... Agent: Sony Corporation

20130109130 - Process for producing photovoltaic device: A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising... Agent: Mitsubishi Heavy Industries, Ltd.

20130109131 - Method of fabricating cigs by selenization at high temperature: A method for high temperature selenization of Cu—In—Ga metal precursor films comprises a partial selenization at a temperature between about 350 C and about 450 C in a Se-containing atmosphere followed by a more fully selenization step at a temperature between about 550 C and about 650 C in a... Agent: Intermolecular, Inc.

20130109132 - Back contact through-holes formation process for solar cell fabrication: Embodiments of the invention contemplate the formation of a high efficiency solar cell using a laser patterning process to form openings in a passivation layer on a surface of a solar cell substrate. In one embodiment, a method of forming an opening in a passivation layer on a solar cell... Agent:

20130109133 - Rear-point-contact process or photovoltaic cells: Embodiments of the invention generally relate to methods for performing rear-point-contact processes on substrates, particularly solar cell substrates. The methods generally include disposing a substrate on a substrate support which functions as a mask during deposition of a passivation layer on a back surface of the substrate. A process gas... Agent:

20130109134 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device, includes introducing a substrate into a growth furnace, forming impurity absorption layers on the substrate and on inner walls of the growth furnace, the impurity absorption layers absorbing impurities on a surface of the substrate and impurities in the growth furnace, etching and... Agent: Mitsubishi Electric Corporation

20130109135 - Method of fabricating a semiconductor device having an interposer: The method of fabricating a semiconductor device may include forming a semiconductor die on a substrate, forming an interposer including at least one integrated circuit connected to the semiconductor die on the substrate or on the semiconductor die, and performing encapsulation to surround the semiconductor die and the interposer.... Agent: Amkor Technology Korea, Inc.

20130109136 - Methods of fabricating electronics assemblies: In an embodiment of the present invention, a method is provided for fabricating an electronics assembly having a substrate and a plurality of circuit elements. The method includes forming a liquid barrier on the substrate, placing a first circuit element on one side of the liquid barrier, and placing a... Agent: Nordson Corporation

20130109137 - Large panel leadframe: A method of manufacturing an integrated circuit package includes mounting a large panel leadframe having a substantially square shape to a ring. The large panel leadframe includes a plurality of die pads and a corresponding plurality of leads arranged in a matrix pattern. An integrated circuit chip is attached to... Agent: Carsem (m) Sdn. Bhd

20130109138 - Manufacturing method of semiconductor device: The yield of semiconductor devices is improved. In an upper die of a resin molding die including a pair of the upper die and a lower die, by lengthening the radius of the cross section of an inner peripheral surface of a second corner part facing an injection gate of... Agent: Renesas Electronics Corporation

20130109139 - Junction-field-effect-transistor devices and methods of manufacturing the same: A method of manufacturing a junction-field-effect-transistor (JFET) device, the method includes the steps of providing a substrate of a first-type impurity; forming a first well region of a second-type impurity in the substrate; forming a second well region and a third well region of the first-type impurity separated from each... Agent: Macronix International Co., Ltd.

20130109140 - Semiconductor device and method of manufacture: A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130109141 - Transistors with different threshold voltages: A first transistor and a second transistor are formed with different threshold voltages. A first gate is formed over the first region of a substrate for a first transistor and a second gate over the second region for a second transistor. The first region is masked. A threshold voltage of... Agent:

20130109142 - Strained-induced mobility enhancement nano-device structure and integrated process architecture for cmos technologies: A method for forming a CMOS integrated circuit device, the method including; providing a semiconductor substrate, forming a gate layer overlying the semiconductor substrate, patterning the gate layer to form NMOS and PMOS gate structures including edges; forming a first dielectric layer overlying the NMOS and PMOS gate structures to... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20130109143 - Vertical gate ldmos device: The present application features methods of fabricating a gate region in a vertical laterally diffused metal oxide semiconductor (LDMOS) transistor. In one aspect, a method includes depositing a masking layer on an n-well region implanted on a substrate, patterning the masking layer to define an area, and forming a first... Agent: Volterra Semiconductor Corporation

20130109144 - Semiconductor devices and methods of fabricating the same: A MOS transistor includes a pair of impurity regions formed in a substrate as spaced apart from each other, and a gate electrode formed on a region of the substrate located between the pair of impurity regions. Each of the impurity regions is formed of a first epitaxial layer, a... Agent: Samsung Electronics Co., Ltd.

20130109145 - Method of manufacturing semiconductor device: A method for manufacturing a stressed CMOS device includes providing a substrate having a dummy gate and an insulating material layer formed thereon. The dummy gate is embedded in the insulating material layer. The method further includes removing the dummy gate to form a gate opening in the insulating material... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20130109146 - Method for fabricating small-scale mos device: A method for fabricating a small-scale MOS device, including: preparing a substrate; forming a first trench in the substrate along a first side of the gate region and forming a second trench in the substrate along a second side of the gate region, the first side of the gate region... Agent: Csmc Technologies Fab1 Co., Ltd.

20130109147 - Methods of forming metal oxide and memory cells: Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material... Agent: Micron Technology, Inc.

20130109149 - Methods for forming resistive-switching metal oxides for nonvolatile memory elements: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be... Agent: Intermolecular Inc.

20130109148 - Methods of forming a pattern and methods of manufacturing semiconductor devices using the same: In a method of forming a pattern, a first mask layer and a first sacrificial layer may be sequentially formed on an object layer. The first sacrificial layer may be partially etched to form a first sacrificial layer pattern. A second sacrificial layer pattern may be formed on the first... Agent: Samsung Electronics Co., Ltd.

20130109150 - Systems and methods for fabricating self-aligned memory cell: Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-xCaxMnO3 (PCMO) layer above the insulator and the metal... Agent: 4d-s Pty, Ltd

20130109151 - Method for forming void-free dielectric layer: A method for forming a dielectric layer free of voids is disclosed. First, a substrate, a first stressed layer including a recess, a second stressed layer disposed on the first stressed layer and covering the recess and a patterned photoresist embedded in the recess are provided. Second, a first etching... Agent:

20130109152 - Method of making lower parasitic capacitance finfet: An integrated circuit device includes a gate region extending above a semiconductor substrate and extending in a first longitudinal direction. A first fin has a first sidewall that extends in a second longitudinal direction above the semiconductor substrate such that the first fin intersects the gate region. A second fin... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130109153 - Multiple seal ring structure: The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130109156 - Indium phosphide substrate manufacturing method and epitaxial wafer manufacturing method: The present invention affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and epitaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method... Agent: Sumitomo Electric Industries, Ltd.

20130109154 - Method and apparatus for producing silicon nitride film: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and... Agent: Mitsubishi Heavy Industries, Ltd.

20130109155 - Method of forming seed layer and method of forming silicon-containing thin film: Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon... Agent: Tokyo Electron Limited

20130109157 - Non-volatile semiconductor storage device and method of manufacturing the same: A non-volatile semiconductor storage device includes a plurality of memory strings each having a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprising: a first semiconductor layer including a columnar portion extending in a vertical direction with respect to a substrate; a plurality of... Agent:

20130109158 - Methods of fabricating semiconductor devices using mask shrinking: Provided are methods of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, forming a mask layer on the mold layer, etching the mold layer using the mask layer as an etch mask to form a channel hole penetrating the mold layer, shrinking the... Agent:

20130109159 - Gas dispersion apparatus: A gas dispersion apparatus for use with a process chamber, comprising: a quartz body having a top, a ring coupled to a bottom surface of the top and a bottom plate having dispersion holes coupled to the ring opposite the top; a plurality of quartz plates disposed between the top... Agent: Applied Materials, Inc.

20130109160 - Methods for depositing thin films comprising indium nitride by atomic layer deposition: Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.... Agent:

20130109161 - Metal organic chemical vapor deposition apparatus and method: A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas... Agent: Ligadp Co., Ltd.

20130109162 - Surface stabilization process to reduce dopant diffusion: A method for incorporating radicals of a plasma into a substrate or a material on a semiconductor substrate using a remote plasma source. In one embodiment, a method for processing doped materials on a substrate surface is provided and includes forming a doped layer on a substrate and optionally cleaning... Agent: Applied Materials, Inc.

20130109163 - Fabricating method of semiconductor element: The present invention relates to a fabricating method of a semiconductor element. First, a substrate is provided and a first layout structure having a first width is formed on the substrate. Then, an etching mask is formed to cover the first layout structure, and the etching mask exposes a portion... Agent: United Microelectronics Corporation

20130109164 - Remote plasma radical treatment of silicon oxide: Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein... Agent: Applied Materials, Inc.

20130109165 - Method for manufacturing semiconductor device with vertical gate transistor: A method for manufacturing a semiconductor device includes forming a plurality of pillars by etching a semiconductor substrate, forming a gate dielectric layer on sidewalls of the pillars and on surfaces of the semiconductor substrate between the pillars, forming an implant damage in a portion of the gate dielectric layer... Agent:

20130109166 - Methods for fabricating integrated circuits with controlled p-channel threshold voltage: Methods are provided for fabricating integrated circuits having controlled threshold voltages. In accordance with one embodiment a method includes forming a gate dielectric overlying an N-doped silicon substrate and depositing a layer of titanium nitride and a layer of tantalum nitride overlying the gate dielectric. A sub-monolayer of tantalum oxide... Agent: Globalfoundries Inc.

20130109167 - Nanowire efuses: Electrically programmable fuses and methods for forming the same are shown that include forming a wire between a first pad and a second pad on a substrate, forming a blocking structure around a portion of the wire, and depositing a metal layer on the wire and first and second pads... Agent: International Business Machines Corporation

20130109168 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes: forming a metal layer on a semiconductor layer; forming a plated layer having a pattern corresponding to a pattern of a gate bus line which couples each gate finger of a plurality of FETs on the metal layer, the pattern corresponding to... Agent: Sumitomo Electric Device Innovations, Inc.

20130109169 - Methods of manufacturing stress buffer structures in a mounting structure of a semiconductor device: A mounting structure for a semiconductor device is formed to include a stepwise stress buffer layer under a stepwise UBM structure.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130109170 - Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same: A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.... Agent: Fujitsu Limited

20130109172 - High temperature tungsten metallization process: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion... Agent:

20130109171 - Method for etching substrate: One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.... Agent:

20130109173 - Methods for removing silicon nitride spacer, forming transistor and forming semiconductor devices: A method for removing silicon nitride spacers includes providing a silicon substrate having a gate formed thereon, silicon nitride spacers formed on sidewalls of the gate, and source/drain regions formed in the silicon substrate on both sides of the gate, forming metal layers on the gate and the source/drain regions,... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20130109176 - Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolation: According to an exemplary embodiment, a semiconductor die including at least one deep silicon via is provided. The deep silicon via comprises a deep silicon via opening that extends through at least one pre-metal dielectric layer of the semiconductor die, at least one epitaxial layer of the semiconductor die, and... Agent: Newport Fab, LLC Dba Jazz Semiconductor

20130109175 - Method of fabricating semiconductor devices: The present disclosure relates to a method of fabricating semiconductor devices. In the method provided by the present invention, by filling with diblock copolymer a recess of an interlayer dielectric layer naturally formed between two gate lines and then performing a self-assembly process of the diblock copolymer, a small-sized contact... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130109174 - Methods of forming conductive structures using a spacer erosion technique: Disclosed herein are various methods of forming conductive structures, such as conductive lines and via, on an integrated circuit device using a spacer erosion technique. In one example, the method includes forming a patterned hard mask layer above a layer of insulating material, the patterned hard mask having a hard... Agent: Globalfoundries Inc.

20130109177 - Semiconductor device manufacturing method: A substrate is provided with a first wiring layer 111, an interlayer insulating film 132 on the first wiring layer 111, a hole 112A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112A, a second metal layer 113 formed in the hole 112A, a... Agent: Fujitsu Semiconductor Limited

20130109178 - Semiconductor element having a conductive via and method for making the same and package having a semiconductor element with a conductive via: The present invention relates to a semiconductor element having a conductive via and a method for making the same and a package having a semiconductor element with a conductive via. The semiconductor element includes a silicon chip and at least one conductive via. The silicon chip includes a silicon substrate... Agent:

20130109179 - Semiconductor process, semiconductor element and package having semiconductor element: The present invention relates to a semiconductor process, a semiconductor element and a package having a semiconductor element. The semiconductor element includes a base material and at least one through via structure. The base material has a first surface, a second surface, at least one groove and at least one... Agent:

20130109180 - Method for polishing silicon wafer, and polishing solution for use in the method: A to-be-polished surface of a silicon wafer is rough polished while supplying to a hard polishing cloth a polishing solution in which a water-soluble polymer has been added to an alkaline aqueous solution having free abrasive grains. Thus, polishing at a high polishing rate and roll-off on an outer periphery... Agent: Sumco Corporation

20130109181 - Method of polishing a substrate: A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon dioxide is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a... Agent:

20130109182 - Method of polishing using tunable polishing formulation: A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a... Agent:

20130109183 - Multilayer construction: A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.... Agent: 3m Innovative Properties Company

20130109184 - Plasma etching method: It is an object of the present invention to provide a plasma etching method that can improve a selection ratio of a film to be etched to a film different from the film to be etched than that in the related art. The present invention provides a plasma etching method... Agent: Hitachi High-technologies Corporation

20130109185 - Method of fabricating miniaturized semiconductor or other device: A method of fabricating a miniaturized semiconductor or other such device takes advantage of a self-reorganization characteristic of an in-situ dissociable diblock copolymer to form a circular via hole that is centrally disposed relative to other device features. In one embodiment, the method is used to form a dual damascene... Agent: Semiconductor Manufacturing International Corporation

20130109186 - Method of forming semiconductor devices using smt: The present invention provides a method of forming semiconductor devices using SMT. The method comprises providing a substrate; depositing an SiO2 buffer film and a low tensile stress SiN film on the substrate; applying photoresist over the low tensile stress SiN film and exposing the low tensile stress SiN film... Agent: Shanghai Huali Microelectronics Corporation

20130109188 - Plasma etch processes for boron-doped carbonaceous mask layers: Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates.... Agent:

20130109187 - Post etch treatment (pet) of a low-k dielectric film: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric... Agent:

20130109189 - System architecture for plasma processing solar wafers: A system for plasma processing of wafers at high throughput, particularly suitable for processing solar cells. A loading station has a loading conveyor, a loading transport mechanism, and a chuck loading station accepting transportable electrostatic chucks, wherein the loading transport mechanism is configured to remove wafers from the conveyor and... Agent: Intevac, Inc.

20130109190 - Pulsed plasma with low wafer temperature for ultra thin layer etches: Ultrathin material layers are plasma etched with an etch system configured for cryogenic cooling of a substrate to reduce the diffusion coefficients of foreign and intrinsic stop layer atoms (e.g., of the bombarded crystal lattice), and further configured for plasma pulsing to reduce the energy of the impinging ions with... Agent:

20130109191 - Method to prepare semi-conductor device comprising a selective etching of a silicium-germanium layer: t

20130109193 - Substrate processing apparatus and semiconductor device manufacturing method: A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting... Agent: Hitachi Kokusai Electric Inc.

20130109192 - Susceptor with ring to limit backside deposition: A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward... Agent: Asm America, Inc.

20130109194 - Polishing liquid composition: A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ... Agent: Kao Corporation

20130109195 - Film forming apparatus and method of operating the same: Provided is a method of operating a film forming apparatus capable of suppressing generation of particles by improving an adhesion of a carbon film to surfaces of members which are formed of a quartz material and contact a processing space in a processing container. The method includes forming a carbon... Agent: Tokyo Electron Limited

20130109196 - Film forming apparatus and method of operating the same: A method of operating a film forming apparatus includes forming a carbon film on each of surfaces of a plurality of objects held by a holding unit in a processing container and performing a cleaning process with a cleaning gas to remove an unnecessary carbon film adhered on a inside... Agent: Tokyo Electron Limited

20130109197 - Method of forming silicon oxide film: A method of forming a silicon oxide film includes forming a seed layer on a base, forming a silicon film on the seed layer, and forming the silicon oxide film on the base by oxidizing the silicon film and the seed layer.... Agent: Tokyo Electron Limited

20130109198 - High carbon content molecules for amorphous carbon deposition: The disclosure relates to a method of depositing amorphous carbon on a substrate using at least one carbon containing molecule having at least one carbon atom the method comprising the steps of supplying the carbon containing molecule and carrying out the deposition to thereby form a deposited amorphous carbon on... Agent: American Air Liquide, Inc.

20130109199 - Method for fabricating oxides/semiconductor interfaces: By depositing a layer of oxidizing metal on the semiconductor surface first and then depositing a layer of the high-k oxide material over the layer of oxidizing metal by an atomic layer deposition, a high-k metal oxide is formed at the interface between the semiconductor substrate and the high-k oxide... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130109200 - Method for manufacturing semiconductor device: There can be obtained a method for manufacturing a semiconductor device in which adherence of particles can be suppressed and printing onto a substrate can be done. The method for manufacturing a semiconductor device includes the steps of: preparing a substrate formed of a semiconductor; forming a protective film to... Agent: Sumitomo Electric Industries, Ltd.

20130102091 - Test system supporting simplified configuration for controlling test block concurrency: Techniques for configuring a test system that enable simple specification of a degree of concurrency in testing separate functional portions of a semiconductor device. For a test flow with multiple sub-flows; the pins accessed in connection with each sub-flow may define a flow domain. Site regions, each associated with a... Agent: Teradyne, Inc.

20130102092 - Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rod: The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected... Agent: Shin-etsu Chemical Co., Ltd.

20130102093 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device which solves a problem with a burn-in process where current and voltage are applied to finished semiconductor devices at high-temperature. The method uses an organic multilayer wiring substrate for a burn-in board in which power supply/grounding wiring is formed with microscopic openings formed... Agent: Renesas Electronics Corporation

20130102094 - Method for fabricating organic el device and method for evaluating organic el device: An organic EL device (OELD) having a defective portion is irradiated with a laser beam; first luminance of light emitted from the OELD is measured after the OELD is irradiated with the laser beam, while supplying, to the OELD, a first amount of current with which the OELD in a... Agent: Panasonic Corporation

20130102095 - Light emitting diodes with smooth surface for reflective electrode: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode... Agent: Bridgelux, Inc.

20130102096 - Simultaneous silicone dispension on coupler: A semiconductor device and methods of manufacturing the same are disclosed. Specifically, methods and devices for manufacturing optocouplers are disclosed. Even more specifically, methods and devices that deposit one or more encapsulant materials on optocouplers are disclosed. The encapsulant material may include silicone and the devices used to deposit the... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20130102097 - Multicolor light emitting diodes: A device such as a multicolor light emitting diode that emits different colors of light and that may combine the different colors emitted by individual light emitting diodes. The multicolor LED may include a common anode terminal that may be connected to each anode of the individual light emitting diodes.... Agent: Apple Inc.

20130102098 - Array substrate for liquid crystal display device and method of manufacturing the same: An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line disposed along a first direction on the substrate, a data line disposed along a second direction and crossing the gate line to define a pixel region, a thin film transistor connected to... Agent: Lg Display Co., Ltd.

20130102099 - Method of manufacturing cellular electrophysiology sensor chip: A cellular electrophysiology sensor is adapted to measure an electrical change of a test cell. A chip for the sensor includes a diaphragm, and a thermally-oxidized film mainly containing silicon dioxide on the diaphragm. The diaphragm includes a silicon layer and a silicon dioxide layer on an upper surface of... Agent: Panasonic Corporation

20130102100 - Method for making micro-electro-mechanical system device: The present invention discloses a method for making a MEMS device, comprising: providing a zero-layer substrate; forming a MEMS device region on the substrate, wherein the MEMS device region is provided with a first sacrificial region to separate a suspension structure of the MEMS device from another part of the... Agent: Pixart Imaging Incorporation

20130102101 - Wafer level packaging: A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130102102 - Vacuum recycling apparatus and method for refining solar grade polysilicon: A vacuum recycling apparatus for refining solar grade polysilicon is provided which contains a vacuum degassing (VD) device and a vacuum recycling (RH) device. By storing liquid silicon in a bucket in the VD device, controlling the pressure inside the VD and RH devices, and introducing inert gas into the... Agent:

20130102103 - Methods and apparatus for the closed-loop feedback control of the printing of a multilayer pattern: Embodiments of the present invention provide apparatus and methods for closed-loop control utilized in printing a multilayer pattern on a substrate. In one embodiment, a solar cell formation process is provided. The process comprises positioning a substrate on a substrate receiving surface of a printing station, printing a first patterned... Agent: Applied Materials Italia S.r.i.

20130102105 - Production method of solar cell module: The present invention provides a production method of a solar cell module, comprising: a first process of mounting a module layered body, which comprises at least a glass member, an encapsulant, a solar cell element and a translucent member in this order, and in which an outer periphery of the... Agent: Du Pont-mitsui Polychemicals Co., Ltd.

20130102104 - Solar cell module and manufacturing method of solar cell module: A solar cell module includes a structure in which a back surface material, a back-surface-side sealing resin, a solar cell, a light-receiving-surface-side sealing resin, and a front surface material are laminated in sequential order, in which a melting point of a portion, which is in contact with the solar cell,... Agent: Mitsubishi Electric Corporation

20130102106 - Image sensor module and method of manufacturing the same: An image sensor module includes a transparent substrate having recesses defined in a lower face thereof. A light concentration member includes transparent light concentration parts each of which are disposed in a corresponding one of the recesses. Color filters are disposed over each of the light concentration parts and photo... Agent: Sk Hynix Inc.

20130102107 - Method for processing silicon substrate: It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step of forming a thin film including a metal having higher electronegativity than silicon and having a plurality of openings on a silicon... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130102108 - Preparation of semiconductor films: The invention relates to a preparation process for thin semiconducting inorganic films comprising various metals (Cu/In/Zn/Ga/Sn), selenium and/or sulfur. The process uses molecular precursors comprising metal complexes with oximato ligands. Copper-based chalcopyrites of the I-III-IV2-type are prepared with high purity at low temperatures under ambient conditions. The thin films can... Agent: Merck Patent Gesellschaft Mit Beschrankter Haftung

20130102110 - Method and apparatus of forming a conductive layer: The present invention generally includes an apparatus and process of forming a conductive layer on a surface of a host substrate, which can be directly used to form a portion of an electronic device. More specifically, one or more of the embodiments disclosed herein include a process of forming a... Agent: Applied Materials, Inc.

20130102109 - Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells: Embodiments of the present invention generally provide improved processes and apparatus for removing passivation layers from a surface of photovoltaic cells and improving contact resistance in rear point contact photovoltaic cells. In one embodiment, a method of processing a solar cell substrate includes providing a substrate having a passivation layer... Agent: Applied Materials, Inc.

20130102111 - Stacked semiconductor devices including a master device: A stack that includes non-volatile memory devices is disclosed. One of the non-volatile memory devices in the stack is a master device, and the remaining memory device or devices is a slave device(s).... Agent: Mosaid Technologies Incorporated

20130102113 - Method for encapsulating semiconductor and structure thereof: Embodiments of the present invention disclose a method for encapsulating a component with plastic and its encapsulation structure, which belong to the plastic encapsulation technology field. The method includes: processing, by using the surface mounting technology, a first surface of a part to be encapsulated with plastic and/or performing die... Agent: Huawei Device Co., Ltd.

20130102112 - Process for forming packages: A method includes loading a first package component on a concave boat, and placing a second package component over the first package component. A load clamp is placed over the second package component, wherein the load clamp is supported by a temperature-variable spacer of the concave boat. A reflow step... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130102114 - Method for manufacturing a semiconductor device: A technology is capable of simplifying a process of manufacturing an asymmetric device in forming a Tunneling Field Effect Transistor (TFET) structure. A method for manufacturing a semiconductor device comprises forming a conductive pattern over a semiconductor substrate, implanting impurity ions with the conductive pattern as a mask to form... Agent: Hynix Semiconductor Inc.

20130102115 - Method for manufacturing active matrix substrate: The disclosed method for manufacturing an active matrix substrate includes a step in which a first mask is used to pattern a first conductive layer G, CS, and S, a step in which a second mask is used to pattern a first insulating layer, a step in which a third... Agent: Sharp Kabushiki Kaisha

20130102116 - Hybrid integrated semiconductor tri-gate and split dual-gate finfet devices and method for manufacturing: A method for making a tri-gate FinFET and a dual-gate FinFET includes providing a semiconductor on insulator (SOI) wafer having a semiconductor layer over an insulator layer. The method further includes forming a hard mask on the semiconductor layer and patterning the hard mask to form first and second cap... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20130102117 - Manufacturing processes for field effect transistors having strain-induced chanels: One embodiment relates to a method of semiconductor manufacture. In this method, a strain inducing layer is formed over a p-type field effect transistor structure and an n-type field effect transistor structure. The strain inducing layer is removed from over the p-type field effect transistor while the strain inducing layer... Agent: Taiwan Semiconductor Manufacturing Co. Ltd.

20130102118 - Semiconductor device with one-side-contact and method for fabricating the same: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive... Agent: Sk Hynix Inc.

20130102119 - Bulk fin-field effect transistors with well defined isolation: A fin field-effect-transistor fabricated by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes a portion... Agent: International Business Machines Corporation

20130102120 - Methods of manufacturing phase-change memory device and semiconductor device: Methods of manufacturing a phase-change memory device and a semiconductor device are provided. The method of manufacturing the phase-change memory device includes forming a switching device layer, an ohmic contact layer, and a hard mask layer on a semiconductor substrate, patterning the hard mask layer to form a hard mask... Agent:

20130102121 - Oxygen diffusion barrier comprising ru: A method for forming a MIM capacitor structure includes the steps of obtaining a base structure provided with a recess, the recess exposing a conductive bottom electrode plug; selectively growing Ru on the bottom electrode plug, based on a difference in incubation time of Ru growth on the bottom electrode... Agent: Imec

20130102122 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The method includes the steps of: (a) providing a base material; (b) forming a first metal layer on the base material, wherein the first metal layer comprises a first inductor and a first lower electrode;... Agent:

20130102123 - Method for fabricating single-sided buried strap in a semiconductor device: A method for manufacturing a buried-strap includes: forming a trench capacitor structure in a semiconductor substrate, wherein the trench capacitor structure has a doped polysilicon layer and an isolation collar covered by the doped polysilicon layer, and a top surface of the doped polysilicon layer is lower than a top... Agent: Nanya Technology Corporation

20130102124 - Method of manufacturing semiconductor device: In one embodiment, a method of manufacturing a semiconductor device includes forming an isolation trench in a substrate, and forming an amorphous layer on a sidewall surface of the isolation trench. The method further includes forming a sacrificial layer in the isolation trench via the amorphous layer, and forming an... Agent:

20130102125 - Method for controlling structure height: Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.... Agent: International Business Machines Corporation

20130102126 - Method for manufacturing bonded wafer: A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer... Agent: Shin-etsu Handotai Co., Ltd.

20130102127 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device having an ohmic electrode is disclosed. The manufacturing method includes: forming a metal thin film on a rear surface of a semiconductor substrate; forming an ohmic electrode by laser annealing by irradiating the metal thin film with laser beam; and dicing the semiconductor... Agent: Denso Corporation

20130102128 - Method for treating the dislocation in a gan-containing semiconductor layer: A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the... Agent: National Chiao Tung University

20130102129 - Processes for suppressing minority carrier lifetime degradation in silicon wafers: Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.... Agent: Memc Singapore Pte. Ltd. (uen200614794d)

20130102135 - 2deg schottky diode formed in nitride material with a composite schottky/ohmic electrode structure and method of making the same: A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart... Agent: Samsung Electro-mechanics Co., Ltd.

20130102130 - Bulk fin-field effect transistors with well defined isolation: A fin field-effect-transistor fabricated by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes a portion... Agent: International Business Machines Corporation

20130102133 - Method and apparatus for fabricating silicon heterojunction solar cells: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and... Agent: Applied Materials, Inc.

20130102134 - Method for producing silicon nanowire devices: The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device... Agent: Shanghai Huali Microelectronics Corporation

20130102131 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device wherein a film containing Si and Ge is formed on a conducting film over a substrate by using a raw material gas containing Si and a raw material gas containing Ge, includes: forming Si nuclei on the conducting film at a first ratio... Agent: Elpida Memory, Inc

20130102132 - Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and recording medium: A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle... Agent: Hitachi Kokusai Electric Inc.

20130102136 - Method of forming an integrated circuit: A method of forming an integrated circuit is disclosed. A second material layer is formed on a first material layer. A patterned mask layer having a plurality of first features with a first pitch P1 is formed on the second material layer. The second material layer is etched by using... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130102137 - Doping method in 3d semiconductor device: The present disclosure provides a method to dope fins of a semiconductor device. The method includes forming a first doping film on a first fin and forming a second doping film on the second fin. The first and second doping films include a different dopant type (e.g., n-type and p-type).... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130102139 - Method for manufacturing double-gate structures: A method is provided for manufacturing a double-gate structure. The method includes providing a substrate and forming a first gate region on a surface of the substrate using a first gate layer. The method also includes forming a second gate layer on the surface of the substrate, wherein the second... Agent:

20130102138 - Semiconductor device and fabrication method thereof: A method for fabricating a semiconductor device is disclosed. A dummy gate feature is formed between two active gate features in an inter-layer dielectric (ILD) over a substrate. An isolation structure is in the substrate and the dummy gate feature is over the isolation structure. Source/drain (S/D) features are formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130102140 - Method of forming a semiconductor device: A semiconductor device is disclosed. In one aspect, the device has a first and second active layer on a substrate, the second active layer having a higher bandgap than the first active layer, being substantially Ga-free and including at least Al. The device has a gate insulating layer on a... Agent: Imec

20130102141 - Method for manufacturing semiconductor device: A method for manufacturing a MOSFET includes the steps of preparing a substrate (10) composed of silicon carbide, forming a gate oxide film (20) in contact with the substrate (10), and introducing nitrogen atoms in a region including an interface between the substrate (10) and the gate oxide film (20).... Agent: Sumitomo Electric Industries, Ltd.

20130102143 - Method of making a non-volatile memory cell having a floating gate: Forming an NVM structure includes forming a floating gate layer; forming a first dielectric layer over the floating gate layer; forming a plurality of nanocrystals over the first dielectric layer; etching the first dielectric layer using the plurality of nanocrystals as a mask to form dielectric structures, wherein the floating... Agent:

20130102142 - Stress modulation for metal gate semiconductor device: The present disclosure provides a method of semiconductor device fabrication including removing a sacrificial gate structure formed on a substrate to provide an opening. A metal gate structure is then formed in the opening. The forming of the metal gate structure includes forming a first layer (including metal) on a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130102144 - Methods for forming a metal gate structure on a substrate: Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form... Agent: Applied Materials, Inc.

20130102145 - Metal gate process: A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the first recess and the second recess is formed. A material is filled in the first recess... Agent:

20130102146 - Semiconductor integrated circuit and method for fabricating the same: A semiconductor integrated circuit includes: a semiconductor chip; a through-chip via passing through a conductive pattern disposed in the semiconductor chip and cutting the conductive pattern; and an insulation pattern disposed on an outer circumference surface of the through-chip via to insulate the conductive pattern from the through-chip via.... Agent: Sk Hynix Inc.

20130102147 - Methods of forming conductive structures in dielectric layers on an integrated circuit device: One method disclosed herein includes the steps of forming a ULK material layer, forming a hard mask layer above the ULK material layer, forming a patterned photoresist layer above the hard mask layer, performing at least one etching process to define an opening in at least the ULK material layer... Agent: Globalfoundries Inc.

20130102148 - Interconnect structure for semiconductor devices: A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130102149 - Liner property improvement: Methods of forming a dielectric liner layer on a semiconductor substrate are described. The method may include flowing a phosphorus-containing precursor with a silicon-containing precursor and an oxygen-containing precursor over the substrate to deposit a dielectric material. The dielectric material may be deposited along a field region and within at... Agent: Applied Materials, Inc.

20130102150 - Method of fabricating non-volatile memory device having small contact and related devices: A sacrificial pattern is formed to partially cover the pipe-shaped electrode. A sacrificial spacer is formed on a lateral surface of the sacrificial pattern. The sacrificial spacer extends across the pipe-shaped electrode. The sacrificial spacer has a first side and a second side opposite the first side. The sacrificial pattern... Agent: Samsung Electronics Co., Ltd.

20130102151 - Methods of manufacturing nand flash memory devices: A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive... Agent:

20130102153 - Method and composition for chemical mechanical planarization of a metal or a metal alloy: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing.... Agent: Air Products And Chemicals, Inc.

20130102154 - Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media: Methods and systems for removing materials from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes providing a microfeature workpiece having a substrate material and a conductive material that includes a refractory metal (e.g., tantalum, tantalum nitride, titanium, and/or titanium nitride). First and second... Agent: Micron Technology, Inc.

20130102152 - Semiconductor manufacturing apparatus and method of manufacturing semiconductor device: A semiconductor manufacturing apparatus includes at least one inner retaining ring, and an outer retaining ring. The at least one inner retaining ring applies a first pressure to the polishing pad, and retains a substrate on the polishing pad. The outer retaining ring applies a second pressure to the polishing... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130102156 - Components of plasma processing chambers having textured plasma resistant coatings: A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of... Agent: Lam Research Corporation

20130102155 - Icp source design for plasma uniformity and efficiency enhancement: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and... Agent:

20130102157 - Etching method and device: An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch... Agent: Tokyo Electron Limited

20130102158 - Method, apparatus and composition for wet etching: A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric... Agent: Lam Research Ag

20130102159 - Substrate processing apparatus, substrate transfer method and method for manufacturing semiconductor device: To provide a substrate processing apparatus, including: a plurality of process chambers in which a prescribed number of each type of substrates is processed; and a controller configured to decide the number of dummy substrates so that the number of the dummy substrates used in each process chamber is approximately... Agent: Hitachi Kokusai Electric Inc.

20130102160 - Methods of forming patterns: Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material... Agent: Micron Technology, Inc.

20130102161 - Method of manufacturing semiconductor device, cleaning method, substrate processing apparatus and non-transitory computer-readable recording medium: A method of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber, and removing a deposit from at least a portion of an inside of the process chamber after forming the film, wherein removing the deposit includes performing a cycle a predetermined number of... Agent: Hitachi Kokusai Electric Inc.

20130095576 - Transformer signal coupling for flip-chip integration: Methods for transformer signal coupling and impedance matching for flip-chip circuit assemblies are presented. In one embodiment, a method for providing an inductive coupling between dies may include fabricating a first inductor on a first die using a passive process, fabricating a second inductor on a second die using a... Agent: Qualcomm Incorporated

20130095577 - System and method for measuring layer thickness and depositing semiconductor layers: Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor... Agent: First Solar, Inc.

20130095578 - Apparatus and method for the production of photovoltaic modules: Embodiments of the invention may provide a system for the production of photovoltaic modules that comprises at least a first work line having a plurality of positioning stations in which a series of first processing operations are performed and a second work line consisting of at least a positioning station... Agent:

20130095579 - Method and apparatus for the formation of solar cells with selective emitters: Methods and apparatus for forming solar cells with selective emitters are provided. A method includes positioning a substrate on a substrate receiving surface. The substrate has a surface comprising a first patterned heavily doped region having a first dopant concentration that defines the selective emitters, and a second doped emitter... Agent: Applied Materials Italia S.r.l.

20130095580 - Semiconductor device and structure: A method for formation of a semiconductor device including a first mono-crystalline layer comprising first transistors and first alignment marks, the method comprising forming a doped layer within a wafer, forming a second mono-crystalline layer on top of the first mono-crystalline layer by transferring at least a portion of the... Agent:

20130095582 - Method for manufacturing sealed structure: A method for manufacturing a sealed structure in which few cracks are generated is provided. Scan with the laser beam is performed so that there is no difference in an irradiation period between the middle portion and the perimeter portion of the glass layer and so that the scanning direction... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130095581 - Thick window layer led manufacture: A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130095584 - Light emitting display and method of manufacturing the same: The present invention is to provide an organic light emitting display and a method of manufacturing the same, the light emitting display including: a first substrate on which a plurality of light emitting devices are formed; a second substrate disposed to face the first substrate; a dam member disposed between... Agent: Samsung Display Co., Ltd.

20130095583 - Method for manufacturing led: A method for manufacturing an LED is disclosed. Firstly, a base with two leads is provided. The base has a cavity defined in a top face thereof and two holes defined in two lateral faces thereof. The two holes communicate the cavity with an outside environment. A chip is fixed... Agent: Advanced Optoelectronic Technology, Inc.

20130095585 - Multi-field arranging method of led chips under single lens: A multi-field arranging method of LED chips under a single lens includes the steps of: setting a first concentric circle on a bottom of a hemispherical lens, wherein the first concentric circle is centered at an axis of the hemispherical lens; equidistantly arranging plural first LED chips on the first... Agent: Helio Optoelectronics Corporation

20130095586 - Method of cutting light emitting element packages employing ceramic substrate, and method of cutting multilayered object: A method of cutting light emitting element packages includes preparing a ceramic substrate having a surface on which a plurality of light emitting element chips are mounted and a light-transmitting material layer is formed to cover the plurality of light emitting element chips; partially removing the light-transmitting material layer between... Agent:

20130095589 - Array substrate and method for manufacturing the same: In an array substrate capable of improving the quality of displayed images and a method for manufacturing the array substrate, the array substrate includes a base substrate, a first conductive pattern including a gate line and a first light-blocking pattern, a semiconductor layer overlapping the light-blocking pattern, a second conductive... Agent: Samsung Electronics Co., Ltd.

20130095590 - Liquid crystal display and method of fabricating the same to have tft's with pixel electrodes integrally extending from one of the source/drain electrodes: A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision... Agent: Samsung Display Co., Ltd.

20130095587 - Methods for manufacturing thin film transistor and display device: The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130095588 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130095591 - Manufacturing method of solid state light emitting element: A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on... Agent: Lextar Electronics Corporation

20130095592 - Method for fabricating organic el device: Forming an adhesive layer on a part of a surface of the flexible substrate; forming a magnetic material layer on the surface of the flexible substrate in a part other than the part on which the adhesive layer is formed; temporarily holding, using magnetic force, the flexible substrate on which... Agent: Panasonic Corporation

20130095593 - Gas sensor and manufacturing method thereof: A gas sensor manufacturing method comprises the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a... Agent: Industrial Technology Research Institute

20130095594 - Solid state imaging device and fabrication method for the same: A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions... Agent: Rohm Co., Ltd.

20130095595 - Method for producing a photovoltaic solar cell: A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped... Agent: Fraunhofer-gesellschaft Zur Forderung Der Angewandten Forschung E.v.

20130095596 - Method for texturing silicon surface to create black silicon for photovoltaic applications: The surface of silicon is textured to create black silicon on a nano-micro scale by electrochemical reduction of a silica layer on silicon in molten salts. The silica layer can be a coating, or a layer caused by the oxidation of the silicon.... Agent:

20130095598 - Back-surface field structures for multi-junction iii-v photovoltaic devices: A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the... Agent: International Business Machines Corporation

20130095597 - Method of manufacturing photoelectric device: A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate... Agent:

20130095600 - Method for manufacturing solar cell: Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may... Agent: Electronics And Telecommunications Research Institute

20130095599 - Photovoltaic device using nano-spheres for textured electrodes: An electronic device includes a substrate and a plurality of particles anchored to the substrate. An electrode material is formed over the particles and configured to form peaks over the particles. One or more operational layers are fog led over the electrode material for performing a device function.... Agent: International Business Machines Corporation

20130095602 - Atypical kesterite compositions: This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.... Agent: E I Du Pont De Nemours And Company

20130095601 - Deposition chamber cleaning system and method: An in-situ method of cleaning a vacuum deposition chamber can include flowing at least one reactive gas into the chamber.... Agent: First Solar, Inc.

20130095604 - Method for producing a metal contact structure of a photovoltaic solar cell: A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer... Agent:

20130095603 - Method for the treatment of a metal contact formed on a substrate: The invention relates to a method for obtaining a metal contact on a substrate, comprising the following steps: (a) depositing a metal pattern in the form of a paste formed from a mixture of a metal power and a solvent, (b) heating the assembly formed in step (a) in order... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130095605 - Leaving substituent-containing compound, organic semiconductor material formed therefrom, organic electronic device, organic thin-film transistor and display device using the organic semiconductor material, method for producing film-like product, pi-elect: A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and... Agent: Ricoh Company, Ltd.

20130095606 - Fabrication method for zno thin film transistors using etch-stop layer: A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned... Agent: Government Of The United States, As Represented By The Secretary Of The Air Force

20130095607 - Methods and apparatus for alignment in flip chip bonding: Methods and apparatus for alignment in a flip chip bonding. A method includes attaching an integrated circuit having connector terminals to a bonding arm, the bonding arm having a chuck for attaching the integrated circuit at the backside surface, the bonding arm having a plurality of CCD imagers mounted thereon;... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130095609 - Device and method for manufacturing a device: A device includes a first semiconductor chip and a first encapsulant that encapsulates the first semiconductor chip and that includes a cavity. A carrier and an electrical component are mounted on the carrier. The carrier is arranged such that the electrical component is enclosed by the cavity.... Agent: Infineon Technologies Ag

20130095608 - Methods for forming 3dic package: A method includes dispensing an underfill between a first package component and a second package component, wherein the first package component is placed on a lower jig, and the second package component is over and bonded to the first package component. A through-opening is in the lower jig and under... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130095610 - Package-on-package assembly with wire bond vias: A microelectronic package can include wire bonds having bases bonded to respective ones of conductive elements exposed at a surface of a substrate. The wire bonds may have exterior edge surfaces disposed at an angle between 25° and 92° relative to the bases, and ends remote, e.g., opposite, from the... Agent: Invensas Corporation

20130095611 - Packaging methods for semiconductor devices: Packaging methods for semiconductor devices are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a workpiece including a plurality of packaging substrates. A portion of the workpiece is removed between the plurality of packaging substrates. A die is attached to each of the plurality of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130095613 - Fabrication method of semiconductor devices and fabrication system of semiconductor devices: In aspects of the invention, a holding stage of a pick up system can include a first stage on which a semiconductor chip is mounted with an adhesive sheet put in between, a second stage supporting the first stage, and an evacuation pipe. The first stage can be provided with... Agent: Fuji Electric Co., Ltd.

20130095612 - Wafer level packaging method of encapsulating the bottom and side of a semiconductor chip: A chip-scale packaging method, with bottom and side of a semiconductor chip encapsulated, includes the following steps: attaching backside of a thinned semiconductor wafer to a dicing tape; separating individual chips by cutting from front side of the wafer at scribe line but not cut through the dicing tape; flipping... Agent:

20130095614 - Wafer level packaging of semiconductor chips: A method of manufacturing semiconductor packages at the wafer level is disclosed. A wafer has multiple integrated circuits (ICs) formed on its active surface, with each IC in communication with a plurality under-bump metallization (UBM) pads formed on one surface the package. The UBM pads include a larger pads near... Agent: Ati Technologies Ulc

20130095615 - Manufacturing method of package structure: A manufacturing method of a package structure is provided. In the manufacturing method, a metal substrate having a seed layer is provided. A patterned circuit layer is formed on a portion of the seed layer. A first patterned dry film layer is formed on the other portion of the seed... Agent:

20130095616 - Method for manufacturing multi-gate transistor device: A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer... Agent:

20130095617 - Thin film transistor and method for manufacturing the same: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility, A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130095618 - Thin film transistor substrate, liquid crystal display having the same, and method of manufacturing the same: In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode... Agent: Samsung Display Co., Ltd.

20130095619 - Performance and reducing variation of narrow channel devices: Embodiment of the present invention provides a method of forming transistors such as narrow channel transistors. The method includes creating a transistor region in a substrate; the transistor region being separated from rest of the substrate, by one or more shallow trench isolation (STI) regions formed in the substrate, to... Agent: International Business Machines Corporation

20130095620 - Methods of forming highly scaled semiconductor devices using a disposable spacer technique: In one example, a method disclosed herein includes the steps of forming a first liner layer above a substrate and above gate structures for both a PMOS transistor and an NMOS transistor, and, after forming extension implant regions and halo implant regions, forming a first spacer proximate the gate structures... Agent: Globalfoundries Inc.

20130095621 - Method of manufacture of a passive high-frequency image reject mixer: A passive implementation of an image reject mixer (IRM), capable of operating at very high frequency, is manufactured in a variety of silicon processes. The IRM comprises a quad MOS multiplier and a lumped-element hybrid, resulting in a passive IRM, operative at radio frequencies (RF) of tens of GHz with... Agent: Theta S.a.

20130095622 - Method of manufacturing a semiconductor device: Methods of manufacturing a semiconductor device are provided. Patterns having a recess region defined therebetween are formed on a substrate, and then a silicon precursor having an organic ligand is provided on the substrate to absorb silicon on sidewalls and a bottom surface of the recess region to form a... Agent:

20130095624 - Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained: An embodiment of a process for manufacturing an electronic device on a semiconductor body of a material with wide forbidden bandgap having a first conductivity type. The process comprises the steps of: forming, on the semiconductor body, a first mask having a first window and a second window above a... Agent: Stmicroelectronics S.r.l.

20130095625 - Semiconductor device and production method thereof: A method for producing a semiconductor device includes preparing a structure having a substrate, a planar semiconductor layer and a columnar semiconductor layer, forming a second drain/source region in the upper part of the columnar semiconductor layer, forming a contact stopper film and a contact interlayer film, and forming a... Agent: Unisantis Electronics Singapore Pte. Ltd.

20130095623 - Vertical transistor having an asymmetric gate: A transistor structure is formed to include a substrate and, overlying the substrate, a source; a drain; and a channel disposed vertically between the source and the drain. The channel is coupled to a gate conductor that surrounds the channel via a layer of gate dielectric material that surrounds the... Agent: International Business Machines Corporation

20130095626 - Method for manufacturing semiconductor device: According to one embodiment, a method for manufacturing a semiconductor device, includes: and forming, on an upper face of a silicon substrate, a plurality of concave portions extending in a first direction, performing, in a gas that contains fluorine or a fluoride, plasma processing on the silicon substrate in which... Agent:

20130095627 - Methods of forming source/drain regions on transistor devices: The present disclosure is directed to various methods of forming source/drain regions for transistor devices. In one example, a method disclosed herein includes the steps of forming a gate electrode structure for a transistor above a semiconducting substrate, performing a first etching process to define a plurality of initial cavities... Agent: Globalfoundries Inc.

20130095629 - Finfet parasitic capacitance reduction using air gap: Methods are disclosed to fabricate a transistor, for example a FinFET, by forming over a substrate at least one electrically conductive channel between a source region and a drain region; forming a gate structure to be disposed over a portion of the channel, the gate structure having a width and... Agent: International Business Machines Corporation

20130095628 - Mask rom fabrication method: A mask ROM fabrication method which comprises steps: sequentially forming a gate dielectric layer and a first photoresist layer on a substrate; letting a light having a wavelength of 365 nm pass through a first phase shift mask to photolithographically form on the first photoresist layer a plurality of first... Agent:

20130095630 - Threshold mismatch and iddq reduction using split carbon co-implantation: An integrated circuit containing MOS transistors may be formed using a split carbon co-implantation. The split carbon co-implant includes an angled carbon implant and a zero-degree carbon implant that is substantially perpendicular to a top surface of the integrated circuit. The split carbon co-implant is done at the LDD and... Agent: Texas Instruments Incorporated

20130095631 - Bipolar transistor with low resistance base contact and method of making the same: Embodiments of the present invention provide a bipolar transistor with low resistance base contact and method of manufacturing the same. The bipolar transistor includes an emitter, a collector, and an intrinsic base between the emitter and the collector. The intrinsic base extends laterally to an extrinsic base. The extrinsic base... Agent: International Business Machines Corporation

20130095632 - Enhanced work function layer supporting growth of rutile phase titanium oxide: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a... Agent: Intermolecular, Inc.

20130095633 - Methods of manufacturing variable resistance memory and semiconductor device: Disclosed herein a method of manufacturing a variable resistance memory, which comprises: forming a conductive plug on a substrate; forming a variable resistance film above the substrate, the variable resistance film covering a top surface of the conductive plug; forming an insulating interlayer above the substrate, the insulating interlayer covering... Agent: Elpida Memory, Inc.

20130095634 - Variable resistance nonvolatile storage device and method for manufacturing the same: Provided is a method for manufacturing a variable resistance nonvolatile storage device, which prevents electrical conduction between lower electrodes and upper electrodes of variable resistance elements in the memory cell holes. The method includes: forming lower copper lines; forming a third interlayer insulating layer; forming memory cell holes in the... Agent:

20130095635 - Method for fabricating nonvolatile memory device: A method for fabricating a nonvolatile memory device includes forming a first insulation layer and a first conductive layer on a substrate including a first region and a second region, forming a first isolation trench in the first region by etching the first conductive layer, the first insulation layer, and... Agent:

20130095636 - Process for producing at least one deep trench isolation: A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and... Agent: Stmicroelectronics (crolles 2) Sas

20130095637 - Method of fabricating a semiconductor device: A method of fabricating a semiconductor device, the method including forming a mask layer on a semiconductor substrate; forming a trench in the semiconductor substrate using the mask layer as an etch mask; forming a first layer in the trench; and performing a first thermal treatment process on the first... Agent:

20130095638 - Method of fabricating integrated circuits: A method of fabricating integrated circuits is provided in which sacrificial material is provided on a first surface of a substrate to define structural elements, integrated circuit material is provided on the sacrificial material to provide integrated circuit structures as defined by the structural elements, the sacrificial material is removed... Agent: Silverbrook Research Pty Ltd

20130095639 - Film for back surface of flip-chip semiconductor, dicing-tape-integrated film for back surface of semiconductor, process for producing semiconductor device, and flip-chip semiconductor device: The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is... Agent: Nitto Denko Corporation

20130095641 - Method of manufacturing gallium nitride film: A method of manufacturing a gallium nitride (GaN) film in which defects in a GaN film that grows can be reduced. The method includes the step of growing a GaN nano-rod on a substrate, the nano-rod having a circumferential groove in an outer periphery thereof, and the step of growing... Agent: Samsung Corning Precision Materials Co., Ltd.

20130095640 - Reusable substrates for electronic device fabrication and methods thereof: Substrates for electronic device fabrication and methods thereof. A reusable substrate with at least a plurality of grooves for electronic device fabrication includes a substrate body made of one or more substrate materials and including a top planar surface, the top planar surface being divided into a plurality of planer... Agent: Lux Material Co., Ltd.

20130095642 - Junction leakage reduction through implantation: Provided is a method of fabricating a semiconductor device. The method includes forming a first III-V family layer over a substrate. The first III-V family layer includes a surface having a first surface morphology. The method includes performing an ion implantation process to the first III-V family layer through the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130095643 - Methods for implanting dopant species in a substrate: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include implanting a dopant species into the one or more regions of the substrate using a first dopant precursor comprising a hydride of the dopant species; and implanting the dopant species into... Agent: Applied Materials, Inc.

20130095645 - Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines: A memory array with staggered local data/bit lines extending generally in a first direction formed in an upper surface of a substrate and memory cell access transistors extending generally upward and aligned generally atop a corresponding local data/bit line. Selected columns of the memory cell access transistors are sacrificed to... Agent: Micron Technology, Inc.

20130095644 - Planarization process for semiconductor device fabrication: The present disclosure provides a method of semiconductor fabrication including forming a dielectric layer is formed on and interposing a first feature and a second feature. A first CMP process is performed on the dielectric layer to removing the dielectric layer from a top surface of the first feature to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130095646 - Ultrahigh density vertical nand memory device and method of making thereof: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking... Agent: Sandisk Technologies Inc.

20130095647 - Backside bevel protection: A method of fabricating an integrated circuit device is provided. The method includes forming a replacement gate structure with a dummy polysilicon layer on a first surface of a substrate. The method further includes depositing a dielectric layer by a thermal process to form offset spacers on two opposing sides... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130095648 - Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors: In a dual stress liner approach, the surface conditions after the patterning of a first stress-inducing layer may be enhanced by appropriately designing an etch sequence for substantially completely removing an etch stop material, which may be used for the patterning of the second stress-inducing dielectric material, while, in other... Agent: Advanced Micro Devices, Inc.

20130095649 - Chemical bath replenishment: Ions depleted from a chemical bath by a reaction such as plating are continually replenished by production and moving of ions through selectively permeable membranes while isolating potential contaminant ions from the chemical bath.... Agent: International Business Machines Corporation

20130095650 - System and method for constructing waffle transistors: Waffle transistors are used within an integrated circuit when a transistor must carry an amount of current greater than the amount of current carried by a typical transistor in the integrated circuit. In a waffle transistor a set of source areas and drain areas are arranged in a checkerboard pattern.... Agent: Neofocal Systems, Inc.

20130095651 - Tunable semiconductor component provided with a current barrier: Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.... Agent: Cadeka Microcircuits, LLC

20130095652 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: forming an interlayer insulating film on a substrate; forming a first hard mask formation film on the interlayer insulating film; altering the first hard mask formation film; after the altering of the first hard mask formation film, transferring an interconnect groove pattern... Agent: Panasonic Corporation

20130095653 - Non-volatile memory devices including vertical nand strings and methods of forming the same: A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be... Agent: Samsung Electronics Co., Ltd.

20130095654 - Methods of manufacturing a vertical type semiconductor device: According to example embodiments of inventive concepts, a method includes forming cell patterns and insulating interlayers between the cell patterns on the substrate. An upper insulating interlayer including initial and preliminary contact holes is formed on an uppermost cell pattern. A first reflection limiting layer pattern and a first photoresist... Agent:

20130095655 - Methods of forming circuit structures within openings and methods of forming conductive lines across at least a portion of a substrate: A method of forming circuit structures within openings includes forming pairs of spaced projections that project elevationally relative to a support material on opposing sides of respective openings formed into the support material. At least two of the spaced projections of different of the pairs are received between immediately adjacent... Agent: Micron Technology, Inc.

20130095656 - Semiconductor device and method of manufacturing the same: According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact... Agent: Kabushiki Kaisha Toshiba

20130095657 - Post-etch treating method: This disclosure relates to a post-etch treating method. An opening is formed by etching a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top. The treating method sequentially comprises steps of: performing a first cleaning process on... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130095658 - Metal organic chemical vapor deposition method and apparatus: A metal organic chemical vapor deposition (MOCVD) method and apparatus are provided. The MOCVD method includes: providing a substrate, in which a metal-based material layer is disposed on a first surface of the substrate; putting the substrate on a base in a chamber, in which the metal-based material layer is... Agent: Industrial Technology Research Institute

20130095659 - Method for producing silicon waveguides on non-soi substrate: The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI... Agent: National Taiwan University

20130095660 - Method for polishing silicon wafer: To final polish a finish-polished surface using a final polishing solution whose chief component is a weakly basic aqueous solution that does not contain abrasive grains. During the final polishing, the weakly basic aqueous solution having an alkali concentration that reduces a haze value of a final-polished surface below the... Agent: Sumco Corporation

20130095661 - Cmp method, cmp apparatus and method of manufacturing semiconductor device: According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first... Agent:

20130095662 - Integrated circuit method with triple patterning: The present disclosure provides one embodiment of an integrated circuit (IC) design method. The method includes receiving an IC design layout having a plurality of IC features. The method includes identifying, from the IC design layout, simple features as a first layout wherein the first layout does not violate design... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20130095663 - Method of forming a semiconductor memory device: A method of forming a semiconductor memory device includes forming an etch target layer on a substrate, forming a sacrificial layer having preliminary openings on the etch target layer, forming assistance spacers in the preliminary openings, respectively, removing the sacrificial layer, such that the assistance spacers remain on the etch... Agent:

20130095664 - Atomic layer deposition of antimony oxide films: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin... Agent: Asm International. N.v.

20130095665 - Systems and methods for processing substrates: A substrate processing system comprises a first processing module in which a process gas is supplied to a substrate to etch a silicon oxide layer formed on the substrate and a second processing module in which an activated oxygen gas is supplied to the substrate. With the system and a... Agent: Tes Co. Ltd.

20130095666 - Plasma confinement rings including rf absorbing material for reducing polymer deposition: Plasma confinement rings are adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to substantially reduce polymer deposition on those surfaces. The plasma confinement rings include an RF lossy material effective to enhance heating at portions of the rings. A low-emissivity material can be provided on a... Agent: Lam Research Corporation

20130095667 - Gas barrier with vent ring for protecting a surface region from liquid: A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact... Agent: Intermolecular, Inc.

20130095668 - Semiconductor device manufacturing method and substrate processing apparatus: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from... Agent: Hitachi Kokusai Electric Inc.

20130095669 - Substrate processing method and substrate processing apparatus: The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen... Agent: Hitachi Kokusai Electric Inc.