|Semiconductor device manufacturing: process patents - Monitor Patents|
USPTO Class 438 | Browse by Industry: Previous - Next | All
Recent | 15: Apr | Mar | Feb | Jan | 14: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | 13: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | 12: Dec | Nov | Oct | Sep | Aug | July | June | May | April | Mar | Feb | Jan | 11: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | 10: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | | 09: Dec | Nov | Oct | Sep | Aug | Jl | Jn | May | Apr | Mar | Fb | Jn | | 2008 | 2007 |
Semiconductor device manufacturing: processBelow are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 04/16/2015 > 76 patent applications in 61 patent subcategories.
20150104882 - Fabrication method for high-density mram using thin hard mask: Embodiments of the invention are described that use a thin metallic hard mask, which can be a bi-layer film, to increase the incident IBE angle for MTJ sidewall cleaning without losing the process margin for the subsequent interconnection process. The patterned metallic hard mask pads also serve as the top... Agent: Avalanche Technology Inc.
20150104883 - Semiconductor devices and methods for fabricating the same: A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer... Agent:
20150104884 - Semiconductor memory device and manufacturing method thereof: A method for manufacturing a semiconductor memory device includes forming a magnetic tunnel junction layer on a lower electrode, forming a spacer having an annular shape on the magnetic tunnel junction layer, forming upper electrodes on both sidewall surfaces of the annular shaped spacer, removing the spacer, and etching the... Agent:
20150104885 - Moveable current sensor for increasing ion beam utilization during ion implantation: An ion implant apparatus and moveable ion beam current sensor are described. Various examples provide moving the ion beam current sensor during an ion implant process such that a distance between the ion beam current sensor and a substrate is maintained during scanning of the ion beam toward the substrate.... Agent: Varian Semiconductor Equipment Associates, Inc.
20150104886 - Semiconductor device arrangement, a method of analysing a performance of a functional circuit on a semiconductor device and a device analysis system: A semiconductor device arrangement comprising a functional circuit comprising a plurality of timing components and a reference module comprising a plurality of reference components is described. Each reference component comprises a reference timing component corresponding to a timing component of the plurality of timing components and a controllable timing component.... Agent: Freescale Semiconductor, Inc.
20150104887 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes generating a mask layout of patterns in which the distance between adjacent ones of the patterns is equal to or less than a resolution of a lithography process, the patterns are apportioned among a plurality of masks such that in each of... Agent: Samsung Electronics Co., Ltd.
20150104888 - System for determining presence of abnormality of heater for semiconductor thin film deposition apparatus: The present invention relates, in general, to an apparatus for determining the presence of abnormality of a heater for a semiconductor thin film deposition apparatus, such as an aluminum or ceramic heater and, more particularly, to a technique for monitoring a phenomenon occurring in an apparatus during a semiconductor thin... Agent:
20150104889 - Semiconductor device, manufacturing method of semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus: A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a... Agent:
20150104890 - Semiconductor light emitting device and fabrication method thereof: A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure... Agent:
20150104891 - Method for producing a substrate for organic electronic devices: Provided are methods of manufacturing a substrate for an OED and an OED. According to the methods of manufacturing a substrate for forming an OED such as an OLED and an OED, a substrate for forming a device having excellent light extraction efficiency and improved reliability by preventing penetration of... Agent:
20150104892 - Microlens for organic el element, organic el element using the same, and manufacturing methods thereof: A microlens for an organic EL element, which is used by being disposed on a light-emitting surface of the organic EL element, said microlens comprising a cured resin layer having concavities and convexities formed on a surface thereof, wherein when a Fourier-transformed image is obtained by performing two-dimensional fast Fourier... Agent: Tokyo Institute Of Technology
20150104894 - Light-emitting panel, manufacturing method of light-emitting panel, and film forming system: A light-emitting panel includes: a substrate and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness... Agent: Panasonic Corporation
20150104893 - Method of producing photo-alignment layer of liquid crystal display: A method of manufacturing a photo-alignment layer, includes: disposing a polymer material on a substrate; pre-baking the polymer material disposed on the substrate; irradiating a light to the pre-baked polymer material, to photo-align the pre-baked polymer material; and thermal-treating the irradiated pre-baked polymer material, to harden the irradiated pre-baked polymer... Agent:
20150104895 - Method of fabricating mems devices having a plurality of cavities: A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate... Agent:
20150104896 - Hollow cathode system, device and method for the plasma-assisted treatment of substrates: A hollow cathode system, a device and a method for the plasma-assisted treatment of substrates includes at least one hollow cathode, which can be connected to a power supply. The hollow cathode includes an electrically conducting main body with an opening which is bounded by ribs, follows a spiral or... Agent: Von Ardenne Gmbh
20150104897 - Device for the homogeneous wet-chemical treatment of substrates: A device for wet-chemical treatment of substrates includes: an accommodation device for a substrate and a process medium, the substrate having a treatment side in operative connection with the process medium; a fluid guidance element, having a specified surface texture, housed in the accommodation device, the specified surface texture being... Agent: Robert Bosch Gmbh
20150104898 - Method for manufacturing inverted metamorphic multijunction solar cells: A method of fabricating both a multijunction solar cell and an inverted metamorphic multijunction solar cell in a single process using a MOCVD reactor by forming a first multijunction solar cell on a semiconductor substrate; forming a release layer over the first solar cell; forming an inverted metamorphic second solar... Agent: Emcore Solar Power, Inc.
20150104899 - Manufactoring semiconductor-based multi-junction photovoltaic devices: Manufacture of multi-junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields and lower costs. Certain solar cells may further include one or more compositional gradients of one or... Agent:
20150104900 - Method for forming structures in a solar cell: A conductive contact pattern is formed on a surface of solar cell by forming a thin conductive layer over at least one lower layer of the solar cell, and ablating a majority of the thin conductive layer using a laser beam, thereby leaving behind the conductive contact pattern. The laser... Agent: Tetrasun, Inc.
20150104901 - Oxide semiconductor film and semiconductor device: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor... Agent:
20150104902 - Method for fastening chips with a contact element onto a substrate provided with a functional layer having openings for the chip contact elements: A method for tacking of chips onto a substrate at chip positions which are distributed on a surface of the substrate. The method includes the following steps: formation or application of a function layer onto the substrate, removing the function layer from the substrate at the chip positions at least... Agent: Ev Group E. Thallner Gmbh
20150104904 - Method of manufacturing a semiconductor device: Provided is a semiconductor device characterized by that first to fourth semiconductor chips are mounted on first to fourth electrodes formed by plating, respectively; the surface of the first semiconductor chip and the upper surface of a fifth electrode, the surface of the second semiconductor chip and the upper surface... Agent:
20150104903 - Treating copper surfaces for packaging: A die has a top surface, and a metal pillar having a portion protruding over the top surface of the die. A sidewall of the metal pillar has nano-wires. The die is bonded to a package substrate. An underfill is filled into the gap between the die and the package... Agent:
20150104905 - Method of manufacturing a semiconductor package: A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold... Agent:
20150104906 - Package for high-power semiconductor devices: Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.... Agent:
20150104907 - Bumpless build-up layer package including an integrated heat spreader: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower... Agent:
20150104908 - High-voltage packaged device: Packaged devices and methods for making and using the same are described. The packaged devices contain one or more circuit components, such as a die, that is attached to a leadframe having a first lead, a second lead, and a third lead (although, higher lead counts may be employed in... Agent:
20150104909 - Apparatus and method for self-aligning chip placement and leveling: An approach is provided for aligning and leveling a chip package portion. The approach involves filling, at least partially, a reservoir formed between a first sidewall portion having a first slanted surface and a second sidewall portion having a second slanted surface with a fluid. The approach also involves placing... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150104910 - Tft flat sensor and manufacturing method therefor: A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating... Agent:
20150104911 - Semiconductor device and method: A semiconductor device is disclosed. One embodiment includes a lateral HEMT (High Electron Mobility Transistor) structure with a heterojunction between two differing group III-nitride semiconductor compounds and a layer arranged on the heterojunction. The layer includes a group III-nitride semiconductor compound and at least one barrier to hinder current flow... Agent:
20150104912 - Vertical gallium nitride power device with breakdown voltage control: A method for fabricating a vertical GaN power device includes providing a first GaN material having a first conductivity type and forming a second GaN material having a second conductivity type and coupled to the first GaN material to create a junction. The method further includes implanting ions through the... Agent:
20150104913 - Simultaneous formation of source/drain openings with different profiles: A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150104914 - Semiconductor process: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. The polysilicon layer is cryo-implanted with at least two of multiple species including a germanium species, a carbon species and a p- or n-type species, at a temperature ranging between −40° C. and −120°... Agent:
20150104915 - Memory cell with decoupled channels: A device having a substrate prepared with a memory cell region having a memory cell is disclosed. The memory cell includes an access transistor and a storage transistor. The access transistor includes first and second source/drain (S/D) regions and the storage transistor includes first and second storage S/D regions. The... Agent:
20150104916 - Method of manufacturing three dimensional semiconductor memory device: A method of manufacturing a three-dimensional semiconductor memory device is provided. The method includes alternately stacking a first insulation film, a first sacrificial film, alternating second insulation films and second sacrificial films, a third sacrificial film and a third insulation film on a substrate. A channel hole is formed to... Agent:
20150104917 - Power mosfet and methods for forming the same: A device includes a trench extending into a semiconductor region and having a first conductivity type, and a conductive field plate in the trench. A first dielectric layer separates a bottom and sidewalls of the field plate from the semiconductor region. A main gate is disposed in the trench and... Agent:
20150104918 - Facilitating fabricating gate-all-around nanowire field-effect transistors: Methods are presented for facilitating fabrication of a semiconductor device, such as a gate-all-around nanowire field-effect transistor. The methods include, for instance: providing at least one stack structure including at least one layer or bump extending above the substrate structure; selectively oxidizing at least a portion of the at least... Agent: Globalfoundries Inc.
20150104919 - Three-dimensional semiconductor device, variable resistive memory device including the same, and method of manufacturing the same: A three-dimensional semiconductor device, a resistive variable memory device including the same, and a method of manufacturing the same are provided. The method may include forming a source on a semiconductor substrate, sequentially forming a first semiconductor layer formed of a first material, a second semiconductor layer formed of a... Agent: Sk Hynix Inc.
20150104920 - Semiconductor device and related fabrication methods: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and... Agent:
20150104921 - Method of fabricating a variable reistance memory device: A method of fabricating a memory device includes defining a cell region on a substrate and defining a dummy region around the cell region, forming bit lines on a top surface of the substrate, the bit lines extending in one direction, forming cell vertical structures on top surfaces of the... Agent:
20150104922 - Integrated device with defined heat flow: An integrated device includes at least one heat generating component which generates heat when operated, at least one temperature-sensitive component, and one or more hollow insulation regions arranged between the at least one heat generating component and the at least one temperature-sensitive component. The hollow insulation region may be provided... Agent:
20150104923 - Mechanism of forming a trench structure: Embodiments of a mechanism for forming a shallow trench isolation (STI) structure filled with a flowable dielectric layer are provided. The mechanism involves using one or more low-temperature thermal anneal processes with oxygen sources and one or more microwave anneals to convert a flowable dielectric material to silicon oxide. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150104925 - Noise decoupling structure with through-substrate vias: A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard... Agent:
20150104924 - Nonvolatile memory device and method for fabricating the same: A nonvolatile memory device includes a substrate having active regions that are defined by an isolation layer and that have first sidewalls extending upward from the isolation layer, floating gates adjoining the first sidewalls of the active regions with a tunnel dielectric layer interposed between the active regions and the... Agent: Sk Hynix Inc.
20150104926 - Method of manufacturing high resistivity soi substrate with reduced interface conducitivity: A method of preparing a high resistivity single crystal semiconductor handle wafer comprising implanting He ions through a front surface of the high resistivity single crystal semiconductor handle wafer, which is followed by an anneal sufficient to form a nanocavity layer in the damage region formed by He ion implantation.... Agent:
20150104927 - Semiconductor structure and manufacturing method thereof: A method for fabricating a semiconductor device is provided. The method includes: providing a first wafer having a first active surface and a first rear surface opposite to the first active surface, the first wafer comprising a first circuit formed therein; providing a second wafer having a second active surface... Agent:
20150104928 - Wafer processing method: After performing a dividing step to divide a wafer into individual chips, an irradiation step is performed to apply ultraviolet radiation or plasma to the mount side of each chip, thereby generating ozone and active oxygen, which functions to remove organic matter sticking to the mount side of each chip.... Agent:
20150104929 - Method and apparatus for dicing wafers having thick passivation polymer layer: Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a front surface having a plurality of integrated circuits thereon involves forming a mask layer above the front surface of the... Agent:
20150104930 - Wafer processing method: A wafer processing method divides a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The method includes a functional layer removing step of applying a CO2 laser beam to the wafer along each division line with... Agent:
20150104931 - Apparatus, device and method for wafer dicing: An apparatus, device and method for wafer dicing is disclosed. In one example, the apparatus discloses: a wafer holding device having a first temperature; a die separation bar moveably coupled to the wafer holding device; and a cooling device coupled to the apparatus and having a second temperature which enables... Agent: Nxp B.v.
20150104932 - Compositions for etching and methods of forming a semiconductor device using the same: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the... Agent:
20150104933 - Systems and methods for annealing semiconductor device structures using microwave radiation: Systems and methods are provided for annealing a semiconductor device structure using microwave radiation. For example, a semiconductor device structure is provided. An interfacial layer is formed on the semiconductor device structure. A high-k dielectric layer is formed on the interfacial layer. Microwave radiation is applied to anneal the semiconductor... Agent: Taiwan Semiconductor Manufacturing Company Limited
20150104935 - Replacement metal gates to enhance transistor strain: Some embodiments of the present invention include apparatuses and methods relating to NMOS and PMOS transistor strain.... Agent: Intel Corporation
20150104934 - Semiconductor device and method for fabricating the same: A semiconductor device includes a substrate including an active region, an insulation layer formed over the substrate, a plurality of openings formed in the insulation layer, a plurality of contact plugs filling the plurality of openings, a silicide layer formed over the substrate and between the substrate and each contact... Agent: Sk Hynix Inc.
20150104936 - Conductive nanowire films: The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and having an average aspect ratio of least 100,000, optionally decorated by metal nanoparticles. It is also disclosed a process for preparation of a conductive film comprising metal nanowires... Agent:
20150104937 - Signal line fabrication method, array substrate fabrication method, array substrate and display device: Embodiments of the disclosure provide a signal line fabrication method, an array substrate fabrication method, an array substrate and a display device. The signal line fabrication method includes: sequentially forming a material layer for forming the signal line, a material layer for forming a first barrier layer and a material... Agent:
20150104938 - Method for forming damascene opening and applications thereof: A method for forming a damascene opening, wherein the method comprises steps as follows: Firstly, a semiconductor structure comprising an inter-metal dielectric (IMD), a first hard mask layer and a second hard mask layer stacked in sequence is provided, wherein the semiconductor structure has at least one trench extending downwards... Agent: United Microelectronics Corporation
20150104939 - Wet-process ceria compositions for polishing substrates, and methods related thereto: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises low average particle size (e.g., 30 nm or less) wet-process ceria abrasive particles, at least one alcohol amine, and water, wherein said polishing composition has a pH of about 6. The polishing composition... Agent: Cabot Miroelectronics Corporation
20150104942 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber. The semiconductor substrate has an uneasily-etched material formed thereabove and at least an upper layer film formed above the uneasily-etched material. The method includes etching the upper layer... Agent:
20150104943 - Method for forming semiconductor structure: A method for forming a semiconductor structure. A dielectric layer including adjacent first and second dielectric regions is formed on a substrate. The dielectric layer includes a curable material. The first dielectric region is cured. A portion of the second dielectric region is etched to form an opening and leave... Agent: United Microelectronics Corp.
20150104944 - Method of forming patterns for semiconductor device: There is provided a method of forming patterns for a semiconductor device. The method sequentially forming a first mask layer and a second mask layer on a substrate. The method also includes forming a second mask pattern layer by patterning the second mask layer. The method further includes forming a... Agent: Samsung Electronics Co., Ltd.
20150104945 - Methods of fabricating a semiconductor device: A method for fabricating a semiconductor device is provided. In the method, a first hard mask layer is formed on a stepped structure. The first hard mask layer has a level top surface and thickness sufficient to etch the structure. A second hard mask pattern is formed on the first... Agent:
20150104946 - Methods of forming fine patterns for semiconductor devices: Methods of forming fine patterns for semiconductor devices are provided. A method may include sequentially forming a lower layer and a mask layer having first openings on a substrate, forming pillars to fill the first openings and protrude upward from a top surface of the mask layer, forming a block... Agent:
20150104947 - Methods of forming semiconductor devices using hard masks: Methods of forming a semiconductor device are provided. The methods may include forming an insulating layer including silicon on a substrate and sequentially forming a first hard mask layer and a second hard mask layer on the substrate. The first hard mask layer may include carbon, and the second hard... Agent:
20150104948 - Facilitating etch processing of a thin film via partial implantation thereof: Methods of facilitating fabrication of circuit structures are provided which include, for instance: providing a structure with a film layer; modifying an etch property of the film layer by implanting at least one species of element or molecule into the upper portion of the film layer, the etch property of... Agent: Globalfoundries Inc.
20150104949 - Semiconductor manufacturing apparatus and method thereof: In some embodiments of the present disclosure, an apparatus includes an ionizer. The ionizer is configured to dispatch a reactive ion on a surface. The apparatus also has an implanter and the implanter has an outlet releasing an accelerated charged particle on the surface.... Agent: Taiwan Semiconductor Manufacturing Company Ltd.
20150104950 - Plasma processing method: A plasma processing method for processing a silicon containing film formed on a substrate including a step of removing a reaction product with a first plasma formed from a first gas containing halogen, hydrogen, and carbon in a case where the reaction product is formed when performing an etching process... Agent:
20150104951 - Method for etching copper layer: Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition,... Agent: Tokyo Electron Limited
20150104952 - Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper: An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having... Agent: Ekc Technology, Inc.
20150104953 - High uv curing efficiency for low-k dielectrics: One embodiment is a method for semiconductor processing. In this method, a precursor film is provided over a semiconductor substrate, where the precursor film is made of a structural former and porogen. Prior to cross-linking, the porogen is removed by exposure to UV radiation having one or more wavelengths in... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150104954 - Deposition of boron and carbon containing materials: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about... Agent:
20150104955 - Deposition of boron and carbon containing materials: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about... Agent:
20150104956 - Adjustable spatial filter for laser scribing apparatus: t
20150104957 - Resist mask processing method: A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a... Agent: Tokyo Electron Limited04/09/2015 > 63 patent applications in 56 patent subcategories.
20150099313 - Method and device for producing a plurality optoelectronic elements: A method for producing a plurality of optoelectronic components may include measuring at least one measurement parameter for a first optoelectronic component and a second optoelectronic component, and processing the first optoelectronic component and the second optoelectronic component taking account of the measured measurement parameter value of the first optoelectronic... Agent:
20150099314 - Predictive method of matching two plasma reactors: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity... Agent: Applied Materials, Inc.
20150099315 - Mechanisms for monitoring impurity in high-k dielectric film: Embodiments of mechanisms of monitoring metal impurity in a high-k dielectric film are provided. The method includes forming an interfacial layer over a substrate. The method also includes forming a high-k dielectric film on the interfacial layer, and the interfacial layer and the high-k dielectric film form a stacked structure... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150099316 - Method of forming metallic bonding layer and method of manufacturing semiconductor light emitting device using the same: A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer... Agent: Samsung Electro-mechanics Co., Ltd.
20150099319 - Led package with slanting structure and method of the same: A method for forming LED package comprises providing a substrate with a first conductive type through-hole and a second conductive type through-hole through the substrate. A reflective layer is formed on an upper surface of the substrate. A LED die is provided with a first conductive type pad and a... Agent:
20150099318 - Processing of a direct-bandgap chip after bonding to a silicon photonic device: A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip... Agent: Skorpios Technologies, Inc.
20150099317 - Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser: A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer,... Agent: Fuji Xerox Co., Ltd.
20150099320 - Light-emitting diode assembly and fabrication method thereof: Disclosed embodiments include a manufacturing method for an LED assembly. Providing a first carrier, wherein several LED chips are formed on the first carrier, and providing a second carrier. Attaching the second carrier to the LED chips and detaching the first carrier from the LED chips but leaving the LED... Agent:
20150099321 - Method for fabricating microstructure to generate surface plasmon waves: A method for fabricating a microstructure to generate surface plasmon waves comprises steps of: preparing a substrate, and using a carrier material to carry a plurality of metallic nanoparticles and letting the metallic nanoparticles undertake self-assembly to form a microstructure on the substrate, wherein the metallic nanoparticles are separated from... Agent:
20150099322 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device includes a substrate and a plurality of pixels defined in the substrate. A pixel includes red subpixel, green subpixel, blue subpixel, and white subpixel. The organic light emitting display device includes an anode electrode formed on the substrate, a cathode electrode opposing the anode... Agent: Lg Display Co., Ltd.
20150099323 - Method of manufacturing solar cell module and solar cell module: A stack is obtained by stacking a glass plate, a first transparent resin sheet, a solar cell, a second transparent resin sheet, a colored resin sheet, and a first resin sheet. The stack is pressed under heat to fabricate a module including the glass plate, a first transparent bonding layer... Agent:
20150099324 - Bifacial tandem solar cells: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on... Agent:
20150099325 - Method of making a transparent metal oxide electrode: The present invention relates to a method for enhancing the conductivity of an undoped transparent metal oxide to obtain a transparent conductive oxide (TCO) electrode. More in particular it relates to such a method comprising the steps of providing a transparent metal oxide, applying a UV transparent barrier layer on... Agent: Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno
20150099326 - Solar cell and manufacturing method of the same: A method for manufacturing a solar cell, comprising the steps of: a) providing a semiconductor substrate having a light-receiving side and a back side, wherein a passivation layer is formed on the back side; b) forming a silver conductor pattern comprising a metal resinate on the back side of the... Agent: E I Du Pont De Nemours And Company
20150099327 - Etching solution for an aluminum oxide film, and method for manufacturing a thin-film semiconductor device using the etching solution: An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film... Agent: Panasonic Corporation
20150099328 - Monolithic integration of cmos and non-silicon devices: A method includes attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer. The second wafer comprises a first region including a material different from silicon. The method also includes forming devices in the first region or in a second region of the combined wafer... Agent:
20150099329 - Packaged semiconductor device having multilevel leadframes configured as modules: Fabricating a packaged semiconductor device provides first planar leadframe with first leads and pads having attached electronic components. The first leadframe has a set of elongated leads bent at an angle away from the plane of the first leadframe. A second planar leadframe has second leads having attached electronic components.... Agent:
20150099330 - Glass wafers for semiconductors fabrication processes and methods of making same: The present disclosure is directed to the use of glass wafers as carriers, interposers, or in other selected applications in which electronic circuitry or operative elements, such as transistors, are formed in the creation of electronic devices. The glass wafers generally include a glass having a coefficient of thermal expansion... Agent:
20150099331 - Semiconductor device and method of manufacturing the same: As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining... Agent:
20150099332 - Resin composition, substrate and method of manufacturing electronic device: Provided are a resin composition and a substrate that are capable of being used for producing an electronic device including thin-film transistors having an excellent switching property. The resin composition contains an aromatic polyamide and a solvent dissolving the aromatic polyamide. The resin composition is used to form a layer,... Agent: Sumitomo Bakelite Company Limited
20150099333 - Semiconductor device and fabrication method thereof: For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an... Agent:
20150099334 - Method of making a cmos semiconductor device using a stressed silicon-on-insulator (soi) wafer: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced... Agent: Stmicroelectronics, Inc.
20150099335 - Method of making a semiconductor device using trench isolation regions to maintain channel stress: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes forming laterally adjacent first and second active regions in a semiconductor layer of a silicon-on-insulator (SOI) wafer. A stress inducing layer is formed above the first active region to impart stress thereto. Trench isolation regions are formed... Agent: Stmicroelectronics, Inc.
20150099336 - Methods of manufacturing integrated circuits having finfet structures with epitaxially formed source/drain regions: Methods of manufacturing semiconductor integrated circuits having FinFET structures with epitaxially formed source and drain regions are disclosed. A method of fabricating an integrated circuit includes forming a plurality of silicon fin structures on a semiconductor substrate, epitaxially growing a silicon material on the fin structures, wherein a merged source/drain... Agent:
20150099337 - Nonvolatile memory device and method for fabricating the same: A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes alternately formed along the channel... Agent: Sk Hynix Inc.
20150099338 - Non-volatile memory device and method of manufacturing the same: A non-volatile memory device includes first and second vertical channel layers generally protruding upwardly from a semiconductor substrate substantially in parallel; a first gate group configured to include a plurality of memory cell gates which are stacked substantially along the first vertical channel layer and are isolated from each other... Agent:
20150099339 - Non-volatile memory device and method for fabricating the same: A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes.... Agent: Sk Hynix Inc.
20150099340 - Methods for preventing oxidation damage during finfet fabrication: Embodiments of the present invention provide improved methods for fabricating field effect transistors such as finFETs. Stressor regions are used to increase carrier mobility. However, subsequent processes such as deposition of flowable oxide and annealing can damage the stressor regions, diminishing the amount of stress that is induced. Embodiments of... Agent: Globalfoundries Inc.
20150099341 - Methods for producing polysilicon resistors: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon... Agent: Infineon Technologies Ag
20150099342 - Mechanism of forming a trench structure: Forming a shallow trench isolation (STI) structure filled with a flowable dielectric layer involves performing an implant to generate passages in the upper portion of the flowable dielectric layer. The passages enable oxygen source in a thermal anneal to reach the flowable dielectric layer near the bottom of the STI... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150099343 - Semiconductor memory device: A semiconductor memory device includes a plurality of auxiliary patterns formed over a semiconductor substrate, a plurality of gate line patterns disposed in parallel with one another over the semiconductor substrate between the plurality of auxiliary patterns, and an air gap formed between the plurality of gate line patterns and... Agent: Sk Hynix Inc.
20150099345 - Method for forming features in a silicon containing layer: Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process... Agent:
20150099344 - Method of manufacturing semiconductor device: Provided is a method of manufacturing a semiconductor device. The method includes forming a sacrificial film as part of a process of forming a semiconductor device. The sacrificial film has a relatively high etch selectivity with respect to other materials of the semiconductor device so as to reduce loss of... Agent:
20150099346 - Wafer processing method: In a wafer processing method, the back side of the wafer is ground to reduce the thickness of the wafer to a predetermined thickness. A modified layer is formed by applying a laser beam to the wafer from the back side of the wafer along each division line with the... Agent:
20150099348 - Method of growing nitride semiconductor layer and nitride semiconductor formed by the same: A method of growing a nitride semiconductor layer includes forming a plurality of nano-structures on a substrate, forming a first buffer layer on the substrate such that upper portions of each of the nano-structures are exposed, removing the nano-structures to form voids in the first buffer layer, and growing a... Agent:
20150099349 - Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications: A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an Si material and a Si1−xGex material; and exposing... Agent:
20150099347 - Trench formation with cd less than 10 nm for replacement fin growth: Embodiments described herein generally relate to methods of forming sub-10 nm node FinFETs. Various processing steps may be performed on a substrate to provide a trench over which a dielectric layer is conformally deposited. The dielectric layer is subsequently etched within the trench to expose the underlying substrate and a... Agent: Applied Materials, Inc.
20150099350 - Enabling high activation of dopants in indium-aluminum-galium-nitride material system using hot implantation and nanosecond annealing: Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process. The combination of hot implantation and nanosecond annealing reduces lattice damage of the substrates and facilitates a higher dopant concentration... Agent:
20150099351 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask... Agent: Samsung Electronics Co., Ltd.
20150099352 - Composition for forming n-type diffusion layer, method of producing n-type diffusion layer, and method of producing photovoltaic cell element: A composition for forming an n-type diffusion layer includes a glass powder containing P2O5, SiO2 and CaO and a dispersion medium. An n-type diffusion layer and a photovoltaic cell element having an n-type diffusion layer are produced by applying the composition for forming an n-type diffusion layer on a semiconductor... Agent: Hitachi Chemical Company, Ltd.
20150099353 - Non-volatile memory devices and methods of manufacturing the same: A non-volatile memory device includes a field region that defines an active region in a semiconductor substrate, a floating gate pattern on the active region, a dielectric layer on the floating gate pattern and a control gate on the dielectric layer. The control gate includes a first conductive pattern that... Agent:
20150099354 - Semiconductor device: A semiconductor device includes vertical channel layers, control gates and interlayer insulating layers stacked alternately with each other on the substrate and surrounding the vertical channel layers, floating gates interposed between the vertical channel layers and the control gates and separated from each other by the interlayer insulating layers, and... Agent:
20150099355 - Plating apparatus, plating method, and storage medium: A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110; and a top plate 21 that is provided above the... Agent:
20150099356 - E-fuses containing at least one underlying tungsten contact for programming: Semiconductor structures are provided containing an electronic fuse (E-fuse) that includes a fuse element and at least one underlying tungsten contact that is used for programming the fuse element. In some embodiments, a pair of neighboring tungsten contacts is used for programming the fuse element. In another embodiment, an overlying... Agent:
20150099357 - Method of fabricating wafer-level chip package: A method of fabricating a wafer-level chip package is provided. First, a wafer with two adjacent chips is provided, the wafer having an upper surface and a lower surface, and one side of each chip includes a conducting pad on the lower surface. A recess and an isolation layer extend... Agent:
20150099358 - Method for forming through wafer vias in semiconductor devices: A method for forming a through wafer via hole in a semiconductor device, wherein the semiconductor device comprises a wafer having a SiC substrate with a front side and a backside, a GaN-based layer formed on the front side of the SiC substrate, and a mask structure formed on the... Agent: Win Semiconductors Corp.
20150099359 - Nozzle design for improved distribution of reactants for large format substrates: Systems, methods and apparatus for processing a substrate are disclosed. A reactor for processing a substrate includes a reaction chamber, a substrate support, a nozzle, and an outlet. The chamber is configured to process a single substrate on the substrate support. The nozzle extends along an axis of elongation along... Agent: Qualcomm Mems Technologies, Inc.
20150099360 - Method to reduce k value of dielectric layer for advanced finfet formation: Embodiments described herein generally relate to methods for forming gate structures. Various processes may be performed on a gate dielectric material to reduce the K value of the dielectric material. The gate dielectric having a reduced K value may provide for reduced parasitic capacitance and an overall reduced capacitance. The... Agent:
20150099361 - Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle: A process for the manufacture of semiconductor devices is provided. The process comprises the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a... Agent: Basf Se
20150099362 - Methods of forming line patterns in substrates: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA... Agent: Micron Technology, Inc.
20150099363 - Method of fabricating iii-nitride based semiconductor on partial isolated silicon substrate: A semiconductor is fabricated on a silicon (Si) substrate. The semiconductor is III-nitride based. The Si substrate is partially isolated. Etching is directly processed from top on a chip for solving wire-width problem. The Si substrate does not need to be made thin. The chip can be large scaled and... Agent: National Tsing Hua University
20150099364 - Method for integrated circuit fabrication: Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150099366 - Plasma etching method: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage... Agent: Tokyo Electron Limited
20150099365 - Tunable upper plasma-exclusion-zone ring for a bevel etcher: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the... Agent: Lam Research Corporation
20150099367 - Plasma etch processes for opening mask layers: Implementations described herein generally relate to semiconductor manufacturing and more particularly to the process of plasma etching an amorphous carbon layer. In one implementation, a method of etching a feature in an amorphous carbon layer is provided. The method comprises transferring a substrate including a patterned photoresist layer disposed above... Agent:
20150099368 - Dry etching method: In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF3 gas.... Agent: Hitachi High-technologies Corporation
20150099369 - Process for etching metal using a combination of plasma and solid state sources: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed... Agent: Applied Materials, Inc.
20150099370 - Chemical circulation system and methods of cleaning chemicals: A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150099371 - Nozzle designs for distribution of reactants across substrates: Systems, methods and apparatus for processing a substrate are described. A reactor includes a reaction chamber, a composite nozzle, and a reaction chamber outlet. The composite nozzle extends along a side of the chamber and includes a first nozzle and a second nozzle separate from and parallel the first nozzle.... Agent: Qualcomm Mems Technologies, Inc.
20150099372 - Sequential precursor dosing in an ald multi-station/batch reactor: Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second... Agent:
20150099373 - Method for manufacturing semiconductor device, method for processing substrate, substrate processing device and recording medium: In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the... Agent: Hitachi Kokusai Electric Inc.
20150099374 - Method and apparatus of forming silicon nitride film: Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying... Agent:
20150099375 - Methods for depositing silicon nitride films: Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein... Agent: Air Products And Chemicals, Inc.04/02/2015 > 76 patent applications in 60 patent subcategories.
20150093841 - Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head: A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the... Agent:
20150093842 - Method and structure for receiving a micro device: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device... Agent:
20150093843 - Method of disposing phosphor layers: Disclosed herein is a method of disposing phosphor layers, which can prevent damage to phosphors and also effectively dispose phosphor layers at desired locations of Light-Emitting Diodes (LEDs) when the phosphor layers are detached and disposed at the top surfaces of the LEDs. According to an embodiment, phosphor layers fabricated... Agent: Lightizer Korea Co.
20150093844 - Dicing-free led fabrication: Provided is a method of fabricating a light-emitting diode (LED) device. A wafer is provided. The wafer has a sapphire substrate and a semiconductor layer formed on the sapphire substrate. The semiconductor layer contains a plurality of un-separated LED dies. A photo-sensitive layer is formed over the semiconductor layer. A... Agent:
20150093845 - Method of manufacturing organic electroluminescent display device: A method of manufacturing an organic electroluminescent display device of the invention includes the steps of: forming, on a mother substrate including display regions and terminal forming regions, an upper electrode in each of the display regions; and cutting the mother substrate along each border between the display regions to... Agent: Japan Display Inc.
20150093846 - Coating system and method for manufacturing light-emitting device: Provided is a coating system allowing on-demand preparation and coating of an ink. The coating system (10) includes an ingredient ink supply portion (20), a first pipe (90a), a stirring tank (50) including an ink stirring mechanism (52), a supply regulator portion (30) regulating the respective amounts of ingredient inks... Agent: Sumitomo Chemical Company, Limited
20150093847 - Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode: Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.... Agent:
20150093848 - Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor... Agent:
20150093849 - Systems and methods for single-molecule nucleic-acid assay platforms: Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the... Agent: The Trustees Of Columbia University In The City Of New York
20150093850 - Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material: A method is disclosed of constructing a composite material structure, comprised of an aerogel precursor foundation, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for... Agent:
20150093851 - Alignment for metallization: Forming a metal layer on a solar cell. Forming a metal layer can include placing a patterned metal foil on the solar cell, where the patterned metal foil includes a positive busbar, a negative busbar, a positive contact finger extending from the positive busbar, a negative contact finger extending from... Agent:
20150093852 - Method for enhancing conductivity of molybdenum thin film by using electron beam irradiation: Disclosed is a method for manufacturing a solar cell, which is capable of enhancing the conductivity of a molybdenum thin film by decreasing the specific resistivity and thickness of the molybdenum thin film that is a back electrode. The method for manufacturing the solar cell according to the present invention... Agent: Korea Institute Of Industrial Technology
20150093854 - Method for manufacturing semiconductor device: In a manufacturing process of a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation through heat treatment and oxygen doping treatment are performed. A transistor including an oxide semiconductor film subjected to dehydration or dehydrogenation through heat treatment and oxygen doping treatment can be a highly reliable transistor... Agent:
20150093853 - Semiconductor device: An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers... Agent:
20150093855 - Semiconductor device and manufacturing method thereof: To provide a miniaturized semiconductor device with stable electric characteristics in which a short-channel effect is suppressed. Further, to provide a manufacturing method of the semiconductor device. The semiconductor device (transistor) including a trench formed in an oxide insulating layer, an oxide semiconductor film formed along the trench, a source... Agent:
20150093856 - Semiconductor device and manufacturing method thereof: A method of manufacturing a WLP semiconductor structure includes several operations. One of the operations is providing a carrier and the carrier includes a top surface. One of the operations is covering a portion of the top surface with a plurality of active dies. One of the operations is disposing... Agent: Taiwan Semiconductor Manufacturing Company Ltd.
20150093857 - Semiconductor packages and methods of manufacturing the same: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor package includes a substrate, a first semiconductor chip mounted on the circuit substrate and having a first width, a second semiconductor chip overlying the first semiconductor chip and having a second width greater than the first width, and... Agent:
20150093858 - Methods for controlling warpage in packaging: A method includes placing a plurality of dummy dies over a carrier, placing a plurality of device dies over the carrier, molding the plurality of dummy dies and the plurality of device dies in a molding compound, forming redistribution line over and electrically coupled to the device dies, and performing... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150093859 - Electronic module assembly with patterned adhesive array: An improved electronic module assembly and method of fabrication is disclosed. A patterned array of adhesive is deposited on a laminate, to which a chip is attached. Each region of adhesive is referred to as a lid tie. A lid is placed on the laminate, and is in contact with... Agent: International Business Machines Corporation
20150093860 - Orientation-independent device configuration and assembly: The present disclosure is directed to orientation-independent device configuration and assembly. An electronic device may comprise conductive pads arranged concentrically on a surface of the device. The conductive pads on the device may mate with conductive pads in a device location in circuitry. Example conductive pads may include at least... Agent: Osram Sylvania Inc.
20150093861 - Method for the formation of cmos transistors: An SOI substrate includes first and second active regions separated by STI structures and including gate stacks. A spacer layer conformally deposited over the first and second regions including the gate stacks is directionally etched to define sidewall spacers along the sides of the gate stacks. An oxide layer and... Agent: Stmicroelectronics, Inc.
20150093862 - Interface treatment of semiconductor surfaces with high density low energy plasma: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.... Agent: Applied Mateirals, Inc.
20150093863 - Method of making a floating gate non-volatile memory (nvm) with breakdown prevention: A method of making a semiconductor structure includes patterning a polysilicon layer on a substrate to form a first floating gate over a first active region in the substrate and a second floating gate over a second active region in the substrate. An opening between the first and second floating... Agent:
20150093864 - Non-volatile memory (nvm) and high-k and metal gate integration using gate-last methodology: A method of making a semiconductor structure uses a substrate and includes a logic device in a logic region and a non-volatile memory (NVM) device in an NVM region. An NVM structure is formed in the NVM region. The NVM structure includes a control gate structure and a select gate... Agent: Freescale Semiconductor, Inc.
20150093866 - Nonvolatile memory device and method for fabricating the same: A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom... Agent: Sk Hynix, Inc.
20150093865 - Semiconductor devices and methods of fabricating the same: A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating... Agent:
20150093867 - Method of fabricating semiconductor device: A method for fabricating a semiconductor device includes preparing a substrate in which a first active region and a second active region are defined by a device isolation region, forming a channel region in the first active region and the second active region, respectively, forming a gate insulating layer on... Agent: Samsung Electronics Co., Ltd.
20150093869 - Double gated 4f2 dram chc cell and methods of fabricating the same: A semiconductor device is provided that includes a fin having a first gate and a second gate formed on a first sidewall of the fin in a first trench, wherein the first gate is formed above the second gate. The device includes a third gate and a fourth gate formed... Agent:
20150093868 - Integrated circuit devices including finfets and methods of forming the same: Integrated circuit devices including fin field-effect transistors (finFETs) and methods of forming the same are provided. The methods may include forming a fin-shaped channel region including germanium on a substrate and forming a source/drain region adjacent the channel region on the substrate. The methods may further include forming a barrier... Agent:
20150093870 - Method of fabricating semiconductor device structure: A method of fabricating a semiconductor device structure is provided. The method includes the following step. A gate dielectric layer is formed on a substrate. A gate electrode is on the gate dielectric layer. The gate dielectric layer exposed by the gate electrode is treated. A first etching process is... Agent: United Microelectronics Corp.
20150093871 - Enhanced stress memorization technique for metal gate transistors: A method of manufacturing a semiconductor device includes forming a dummy gate structure on a semiconductor substrate, forming sidewall spacers, and forming heavily doped source/drain regions. After removing the spacers, a stress material layer is formed over the dummy gate structure. An annealing process is performed to transfer the stress... Agent: Semiconductor Manufacturing International (beijing) Corporation
20150093872 - Lateral heterojunction bipolar transistor with low temperature recessed contacts: A method of forming the heterojunction bipolar transistor that includes providing a stack of a base layer, an extrinsic base layer, a first metal containing layer, and a dielectric cap layer. The dielectric cap layer and the first metal containing layer may be etched to provide a base contact and... Agent: International Business Machines Corporation
20150093873 - Inductor device and fabrication method: Various embodiments provide inductor devices and fabrication methods. An exemplary inductor device can include a plurality of planar spiral wirings isolated by a dielectric layer. The planar spiral wirings can be connected by conductive pads formed over the dielectric layer and by conductive plugs formed in the dielectric layer. In... Agent:
20150093874 - Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least... Agent:
20150093875 - Semiconductor device and method of manufacturing the same: The semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region defined therein, semiconductor memory elements formed over the semiconductor substrate in the cell region, an interlayer insulating layer formed over the semiconductor substrate in the peripheral circuit region, first conductive layers substantially vertically passing... Agent:
20150093876 - Doped oxide dielectrics for resistive random access memory cells: Provided are methods of fabricating memory cells such as resistive random access memory (ReRAM) cells. A method involves forming a first layer including two high-k dielectric materials such that one material has a higher dielectric constant than the other material. In some embodiments, hafnium oxide and titanium oxide form the... Agent:
20150093878 - Finfet fabrication method: Embodiments of the present invention provide an improved method for fabrication of fin field effect transistors (finFETs). Sacrificial regions are formed on a semiconductor substrate. Spacers are formed adjacent to two sides of the sacrificial regions. Fins are formed based on the spacers. One set of spacers is treated as... Agent: Global Foundries Inc.
20150093877 - Method for manufacturing a semiconductor device by stopping planarization of insulating material on fins: A method for fabricating a semiconductor device is provided, including forming a mask on a surface of a semiconductor substrate, creating isolation trenches within the substrate, and removing the mask from the substrate before depositing an insulating material within the trenches. The insulating material is then planarized to form a... Agent:
20150093879 - Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same: The invention is directed to a temporary adhesive for production of semiconductor device, containing (A) a polymer compound having an acid group, (B) a diluent, and (C) a solvent, an adhesive support including a substrate and an adhesive layer formed from the temporary adhesive for production of semiconductor device, and... Agent: Fujifilm Corporation
20150093880 - Wafer processing method and method of manufacturing semiconductor device by using the same: A wafer processing method, by which a device wafer may be aligned and bonded to a carrier wafer to perform a back grinding process for the device wafer and may be separated from the carrier wafer after performing the back grinding process, and a method of manufacturing a semiconductor device... Agent:
20150093881 - Through-assembly via modules and methods for forming the same: A discrete Through-Assembly Via (TAV) module includes a substrate, and vias extending from a surface of the substrate into the substrate. The TAV module is free from conductive features in contact with one end of each of the conductive vias.... Agent:
20150093882 - Wafer processing method: A wafer processing method of processing a wafer having a plurality of devices formed on the front side of the wafer, the devices being respectively formed in a plurality of separate regions defined by a plurality of crossing division lines. The wafer processing method includes a support member providing step... Agent:
20150093883 - Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device: According to a manufacturing apparatus for semiconductor device according to an embodiment of the present invention, a reaction chamber includes a gas introduction unit and a deposition reaction unit. The gas introduction unit includes a gas introduction port for introducing process gas and a buffer unit into which the process... Agent:
20150093884 - Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods: Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods are provided. The methods may include forming an oxide layer on a substrate and forming a recess in the oxide layer and the substrate. The methods may further include forming an epitaxially grown semiconductor pattern... Agent:
20150093885 - Method of manufacturing semiconductor device using inert, material, and oxidation-reduction gases: According to one embodiment, a method of manufacturing a semiconductor device. The method includes introducing an inert gas and a material gas into a predetermined space, applying a voltage to generate plasma in the space after introducing the inert gas and the material gas so as to form a semiconductor... Agent: Kabushiki Kaisha Toshiba
20150093886 - Plasma processing method and plasma processing apparatus: A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step... Agent: Tokyo Electron Limited
20150093887 - Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsi: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate including a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to... Agent: Globalfoundries, Inc.
20150093888 - Method of fabricating semiconductor device having dual gate: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second... Agent:
20150093889 - Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuits: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to... Agent: Globalfoundries, Inc.
20150093890 - Cobalt metal precursors: A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co2(CO)6(R1C≡CR2), wherein R1 and R2 are individually selected from a straight or branched... Agent:
20150093891 - Method of enabling seamless cobalt gap-fill: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate... Agent:
20150093892 - Microelectronic devices with through-substrate interconnects and associated methods of manufacturing: Microelectronic devices with through-substrate interconnects and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate carrying first and second metallization layers. The second metallization layer is spaced apart from the semiconductor substrate with the first metallization layer therebetween. The semiconductor device also... Agent:
20150093893 - Process of forming seed layer in vertical trench/via: In a process of forming a seed layer, particularly in a vertical trench or via, a semiconductor substrate having a dielectric structure and a hard mask structure thereon is provided. An opening is formed in the hard mask structure, and a trench or via is formed in the dielectric structure... Agent: United Microelectronics Corporation
20150093894 - Semiconductor manufacturing apparatus, semiconductor manufacturing method, and process tube: According to one embodiment, a semiconductor manufacturing apparatus includes a process tube, a substrate supporting unit, and a heater. A surface processing area is provided in a portion of the outer surface of the process tube facing the heater. The surface processing area is processed to reduce the heat radiation... Agent: Kabushiki Kaisha Toshiba
20150093895 - Semiconductor devices and fabricating methods thereof: Fabricating methods of a semiconductor device are provided. The fabricating methods may include forming a mold layer, forming a catalyst pattern including noble metal on the mold layer and etching the mold layer using the catalyst pattern as a catalyst. Etching the mold layer may include performing a wet etching... Agent:
20150093896 - Semiconductor devices having through-vias and methods for fabricating the same: The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and... Agent:
20150093897 - Methods of fabricating semiconductor devices: Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the... Agent:
20150093898 - Combinatorial process system: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed... Agent:
20150093899 - Semiconductor device manufacturing methods: Semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a first pattern in a hard mask using a first lithography process, and forming a second pattern in the hard mask using a second lithography process. A protective layer is formed over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150093900 - Chemical mechanical polishing composition for polishing silicon wafers and related methods: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also... Agent:
20150093901 - Composition for forming a silicon-containing resist under layer film and patterning process: wherein R represents an organic group having 1 to 6 carbon atoms, Ra, Rb and Rc each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0,... Agent:
20150093904 - Arrays of long nanostructures in semiconductor materials and methods thereof: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first... Agent:
20150093903 - Method of manufacturing semiconductor device and semiconductor manufacturing apparatus: According to one embodiment, a method of manufacturing a semiconductor device includes forming a resist and a layer to be etched on a substrate, forming a non-cured layer on the resist by supplying a metal compound containing Ru, forming a cured layer on a surface layer of the resist by... Agent: Kabushiki Kaisha Toshiba
20150093902 - Self-aligned patterning process: Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including forming a plurality of spacers over a first hard mask layer to form a first mask pattern,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150093905 - Substrate processing apparatus and substrate processing method: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral... Agent:
20150093906 - Substrate treatment method and substrate treatment apparatus: A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride... Agent: Shibaura Mechatronics Corporation
20150093908 - High selectivity and low stress carbon hardmask by pulsed low frequency rf power: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio... Agent: Lam Research Corporation
20150093907 - Method and system for three-dimensional (3d) structure fill: Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and... Agent:
20150093909 - Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate: A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation... Agent: Hitachi Kokusai Electric Inc.
20150093911 - Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate;... Agent: Hitachi Kokusai Electric Inc.
20150093910 - Methods for converting planar designs to finfet designs in the design and fabrication of integrated circuits: Methods for converting planar designs to FinFET designs in the design and fabrication of integrated circuits are provided. In one embodiment, a method for converting a planar integrated circuit design to a non-planar integrated circuit design includes identifying a rectangular silicon active area in the planar integrated circuit design, superimposing... Agent: Globalfounderies Singapore Pte. Ltd.
20150093913 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to... Agent: Hitachi Kokusai Electric Inc.
20150093914 - Methods for depositing an aluminum oxide layer over germanium susbtrates in the fabrication of integrated circuits: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon and exposing the semiconductor substrate to first and second atomic layer deposition (ALD) processes. The first ALD... Agent: Globalfoundries, Inc.
20150093916 - Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate... Agent:
20150093915 - Sulfur doped carbon hard masks: Provided are methods of forming ashable hard masks (AHMs) with high etch selectivity and low hydrogen content using plasma enhanced chemical vapor deposition. Methods involve exposing a first layer to be etched on a semiconductor substrate to a carbon source and sulfur source, and generating a plasma to deposit a... Agent: Lam Research Corporation03/26/2015 > 83 patent applications in 61 patent subcategories.
20150087080 - Spin transfer torque cell for magnetic random access memory: Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured... Agent:
20150087081 - Method of repairing organic light emitting display device: A repairing method of an organic light emitting display device includes insulating a first switching element and an organic light emitting layer of a defective pixel from each other, short-circuiting a first dummy line and the organic emission layer at a first location, the first dummy line being adjacent to... Agent:
20150087083 - Bonding apparatus and method of manufacturing semiconductor device: chips (20) and (30); and a control unit (50) having a relative-position detection program (53) for detecting relative positions of the first-layer of the semiconductor chip (20) and the second-layer of the semiconductor chip (30) that are stacked and bonded based on an image of the first through-silicon vias on... Agent: Shinkawa Ltd.
20150087082 - Selective heating during semiconductor device processing to compensate for substrate uniformity variations: In some embodiments, a system includes (1) a controller configured to receive information regarding substrate uniformity; (2) a processing tool configured to perform a semiconductor device manufacturing process on a substrate; and (3) a laser delivery mechanism coupled to the controller, the laser delivery mechanism configured to selectively deliver laser... Agent:
20150087084 - Measuring method for width of color filter unit and manufacturing method for liquid crystal panel: The present invention provides a method of measuring a width of a color filter unit of a liquid crystal panel. The method includes providing a bottom glass substrate having a TFT array thereon; forming the color filter plate locating within an effective region of the liquid crystal panel by photo-etching... Agent:
20150087085 - Device for determining the temperature of a substrate: An apparatus and a method for determining the temperature of a substrate, in particular of a semiconductor substrate during the heating thereof by means of at least one first radiation source are disclosed. A determination of the temperature is based on detecting first and second radiations, each comprising radiation emitted... Agent:
20150087086 - Method for producing image pickup apparatus, and method for producing semiconductor apparatus: A method for producing an image pickup apparatus includes: a process of fabricating a plurality of image pickup chips by cutting an image pickup chip substrate where light receiving sections and electrode pads are formed; a process of fabricating a joined wafer by bonding the image pickup chips to a... Agent: Olympus Corporation
20150087089 - 3d ic testing apparatus: A method comprises connecting a testing setup having a plurality of probes to a device under test having a plurality of vias, wherein a probe is aligned with a corresponding via of the device under test and conducting a plurality of via electrical characteristic tests through a conductive path comprising... Agent:
20150087087 - Color yield of white leds: A method of disposing a phosphor material on an LED such that the LED emits white light and adjusting the quantity of phosphor material such that the white light meets a color target. A formulated procedure is used to determine the adjustment required, and includes a correlation between a change... Agent: Carsem (m) Sdn. Bhd.
20150087088 - Method for producing image pickup apparatus and method for producing semiconductor apparatus: A method for producing an image pickup apparatus includes processes of: cutting an image pickup chip substrate to fabricate a plurality of image pickup chips; bonding the image pickup chips to a glass wafer via a transparent adhesive layer as well as bonding dummy chips to an outer peripheral region... Agent: Olympus Corporation
20150087091 - Manufacturing method and test method of semiconductor device: Provided is a test method by which a transistor whose reliability is low can be detected with low stress and high accuracy in a shorter period of time than a BT test. Provided is to detect a transistor whose reliability is high in a shorter period of time than a... Agent:
20150087090 - Monitor test key of epi profile: A method and apparatus for estimating a height of an epitaxially grown semiconductor material in other semiconductor devices. The method includes epitaxially growing first, second, and third portions of semiconductor material on a first semiconductor device, measuring a height of the third portion of semiconductor material and a height of... Agent:
20150087095 - Encapsulating sheet, light emitting diode device, and producing method thereof: An encapsulating sheet includes a transparent layer in which a concave portion that is dented from the surface inwardly is formed and a phosphor encapsulating layer which fills the concave portion. The transparent layer is formed from a transparent composition containing a first silicone resin composition and the phosphor encapsulating... Agent: Nitto Denko Corporation
20150087093 - Method and system for manufacturing display device: According to one embodiment, a method is disclosed for manufacturing a display device. The method can include forming a first resin layer on a substrate. The method can include forming a display layer on the first resin layer. The display layer includes a plurality of pixels arranged in a direction... Agent: Kabushiki Kaisha Toshiba
20150087094 - Method of manufacturing a semiconductor laser module: A semiconductor laser module includes a laser diode array, an optical fiber array, a fiber array fitting for fixing the optical fiber array, a casing, and a support fitting for fixing the fiber array fitting and casing. The fiber array fitting and support fitting have a first contact section that... Agent:
20150087092 - Opto-mechanical alignment: Technologies are generally described for manufacturing an optical device by attaching a light-emitting element to an optical element through a resin. In various examples, a method is described, where a substrate is provided to have a through-hole at a position in the substrate where an optical element is to be... Agent:
20150087096 - Method of manufacturing semiconductor light emitting device: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion... Agent: Samsung Electronics Co., Ltd.
20150087097 - Method for manufacturing a light-emitting diode: The present disclosure provides a method for manufacturing a light-emitting diode, including: providing a substrate; forming a first semiconductor layer over the substrate; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer; removing a portion of the second semiconductor layer and... Agent: Lextar Electronics Corporation
20150087098 - Method for manufacturing organic thin-film element, apparatus for manufacturing organic thin-film element, method for forming organic film, and method for manufacturing organic el element: A method for reducing an internal pressure of a vacuum chamber while preventing impurity contamination within the vacuum chamber as much as possible. The method includes: rough pumping reducing an internal pressure of a vacuum chamber (1) by using a roughing pump (2), the roughing pump (2) being a mechanical... Agent: Panasonic Corporation
20150087099 - Method for manufacturing light emitting diode: A method for manufacturing a light emitting diode includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a transitional layer on the buffer layer, the buffer layer being made of InGaN; forming an epitaxial layer on the transitional layer; activating the transitional layer by a... Agent:
20150087100 - Method of forming emitters for a back-contact solar cell: Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate... Agent:
20150087101 - Method for forming semiconductor device: A method for forming a semiconductor device includes providing a wafer having a plurality of chip regions, in which each chip region includes a sensing array on a front side of the wafer. A plurality of through silicon vias is formed in the wafer from a back side of the... Agent: Silicon Optronics, Inc.
20150087102 - Surface treatment for bsi image sensors: A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second... Agent:
20150087103 - Laser etching a stack of thin layers for a connection of a photovoltaic cell: A treatment of thin layers for forming a connection of a photovoltaic cell including the thin layers, which includes a first layer, having photovoltaic properties, deposited on a second layer, and the second layer, which is a metal contact layer, deposited on a substrate, the treatment including etching, in the... Agent:
20150087104 - Mechanisms for forming backside illuminated image sensor device structure: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming... Agent: Taiwan Semiconductor Manufacturing Co., Ltd
20150087105 - Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each... Agent:
20150087106 - Methods of forming thin-film photovoltaic devices with discontinuous passivation layers: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.... Agent:
20150087107 - Method for manufacturing photoelectric conversion device: A method for manufacturing a photoelectric conversion device of an embodiment includes forming, on a first electrode, a photoelectric conversion layer comprising at least one of a chalcopyrite compound, a stannite compound, and a kesterite compound. The forming of the photoelectric conversion layer includes forming a photoelectric conversion layer precursor... Agent: Kabushiki Kaisha Toshiba
20150087108 - Process, film, and apparatus for top cell for a pv device: This disclosure describes systems and methods for making at least a portion of a photovoltaic device. This may include a method of manufacturing, an optimization procedure and an apparatus for the PECVD (plasma enhanced chemical vapor deposition) of thin films over large area substrates. In particular, the system may be... Agent:
20150087109 - Dyketopyrrolopyrrole polymers for use in organic semiconductor devices: The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula *A-D* (I), or a polymer of formula *A-DxB-Dy* (II), or *A-DrB-DsA-EtB-Eu (III), and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodiodes, or in a device containing a... Agent: Basf Se
20150087111 - 3 dimensional semiconductor device and method of manufacturing the same: A 3D semiconductor device and a method of manufacturing the same are provided. The method includes forming a first semiconductor layer including a common source node on a semiconductor substrate, forming a transistor region on the first semiconductor layer, wherein the transistor region includes a horizontal channel region substantially parallel... Agent: Sk Hynix Inc.
20150087110 - Low-temperature fabrication of spray-coated metal oxide thin film transistors: The present teachings relate to a method of enabling metal oxide film growth via solution processes at low temperatures (≦350° C.) and in a time-efficient manner. The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices... Agent:
20150087112 - Manufacturing method of the semiconductor device: The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer; immediately after that, side walls of the oxide semiconductor layer are covered with an insulating oxide; and in... Agent:
20150087113 - Electrically isolated power semiconductor package with optimized layout: A packaged power semiconductor device is provided with voltage isolation between a metal backside and terminals of the device. The packaged power semiconductor device is arranged in an encapsulant defining a hole for receiving a structure for physically coupling the device to an object. A direct-bonded copper (“DBC”) substrate is... Agent:
20150087114 - Method for packaging a power device with bottom source electrode: A power semiconductor package has an ultra thin chip with front side molding to reduce substrate resistance; a lead frame unit with grooves located on both side leads provides precise positioning for connecting numerous bridge-shaped metal clips to the front side of the side leads. The bridge-shaped metal clips are... Agent:
20150087115 - Chip package and method for forming the same: According to an embodiment of the present invention, a method for forming a chip package is provided. The method includes: providing a conducting plate, wherein a plurality of conducting pads are disposed on an upper surface of the conducting plate; forming a plurality of conducting bumps on a lower surface... Agent:
20150087117 - Power semiconductor device and method of manufacturing the same: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the... Agent: Samsung Electro-mechanics Co., Ltd.
20150087116 - Sawtooth electric field drift region structure for power semiconductor devices: This invention discloses a semiconductor power device formed in a semiconductor substrate includes rows of multiple horizontal columns of thin layers of alternate conductivity types in a drift region of the semiconductor substrate where each of the thin layers having a thickness to enable a punch through the thin layers... Agent:
20150087118 - Method of forming a high electron mobility transistor: A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; forming an... Agent:
20150087119 - Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier: A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made... Agent:
20150087120 - Raised source/drain and gate portion with dielectric spacer or air gap spacer: A semiconductor structure and method of manufacturing the same are provided. The semiconductor device includes epitaxial raised source/drain (RSD) regions formed on the surface of a semiconductor substrate through selective epitaxial growth. In one embodiment, the faceted side portions of the RSD regions are utilized to form cavity regions which... Agent:
20150087121 - Cmos structures and methods for improving yield: A simple, effective and economical method to improved the yield of CMOS devices using contact etching stopper liner, including, single neutral stressed liner, single stressed liner and dual stress liner (DSL), technology is provided. In order to improve the chip yield, the present invention provides a method in which a... Agent:
20150087122 - Manufacturing method of semiconductor device: Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating... Agent: Rohm Co., Ltd.
20150087123 - Contact strap for memory array: Devices and methods for forming a device are disclosed. The method includes providing a substrate having a memory array region. Front end of line (FEOL) process is performed to form components of memory cell pairs. The FEOL process forms storage gates, access gates or word lines, source/drain regions, spacers, erase... Agent:
20150087124 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on... Agent: Kabushiki Kaisha Toshiba
20150087125 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device of an embodiment includes: preparing a substrate; and growing a p-type SiC single-crystal layer on the surface of the substrate from a liquid phase that contains Si (silicon), C (carbon), a p-type impurity, and an n-type impurity, the p-type impurity being an element... Agent: Kabushiki Kaisha Toshiba
20150087126 - Method of fabrication transistor with non-uniform stress layer with stress concentrated regions: A method of fabrication a transistor device with a non-uniform stress layer including the following processes. First, a semiconductor substrate having a first transistor region is provided. A low temperature deposition process is carried out to form a first tensile stress layer on a transistor within the first transistor region,... Agent:
20150087127 - Mosfet with source side only stress: An integrated circuit contains a transistor with a stress enhancement region on the source side only. In a DeMOS transistor, forming the stress enhancement region on the source side only and not forming a stress enhancement region in the drain extension increases the resistance of the drain extension region enabling... Agent:
20150087128 - Method of manufacturing a semiconductor device that includes a misfet: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces... Agent:
20150087129 - Method for producing semiconductor regions including impurities: A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a... Agent:
20150087130 - Dram mim capacitor using non-noble electrodes: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the... Agent: Intermolecular, Inc.
20150087131 - Method for processing a chip: A method for processing a chip is provided. The method may include: providing a chip having a front side and a back side; and forming an orientation marker on the back side of the chip by forming a hole into the chip from the front side of the chip, the... Agent: Infineon Technologies Ag
20150087132 - Wafer processing: Semiconductor device and method for forming a semiconductor device are presented. A substrate having top and bottom pad stacks is provided. Each pad stack includes at least first and second pad layers. The second pad layer of the bottom pad stack is removed by a batch process. Trench isolation regions... Agent: Globalfoundries Singapore Pte. Ltd.
20150087136 - Method and apparatus for direct formation of nanometer scaled features: An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a diameter on the scale or 10 nm or less. By moving the tips above the surface of a workpiece in the presence of... Agent:
20150087135 - Method of forming a trench isolation structure using a sion layer: A moat, which is a region of a semiconductor wafer that is laterally surrounded by a trench isolation structure, is protected from damage due to dishing or low spots that result from chemical-mechanical polishing by forming a patterned hard mask structure with an upper silicon oxynitride layer, and performing the... Agent: Texas Instruments Incorporated
20150087134 - Semiconductor isolation region uniformity: Methods of facilitating isolation region uniformity include: patterning a semiconductor substrate to form at least one isolation opening within the semiconductor substrate, the patterning comprising leaving, at least in part, a protective hard mask above a portion of the semiconductor substrate; providing an insulating material within and over the at... Agent: Globalfoundries Inc.
20150087133 - Wafer processing: Methods for forming a device are presented. A substrate having top and bottom pad stacks is provided. Each pad stack includes at least first and second pad layers. The second pad layers of the top and bottom pad stacks include an initial thickness TT1 and TB1 respectively. Trench isolation regions... Agent: Globalfoundries Singapore Pte. Ltd.
20150087138 - Method for manufacturing graphene quantum dot using thermal plasma: The present application provides a method for producing a graphene quantum dot using thermal plasma, comprising injecting a carbon source into a thermal plasma jet to pyrolyze the carbon source so as to form a carbon atomic beam and allowing the carbon atomic beam to flow in a tube connected... Agent:
20150087137 - Nitride thin film stucture and method of forming the same: Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is... Agent:
20150087139 - Organoaminosilane precursors and methods for depositing films comprising same: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially... Agent: Air Products And Chemicals, Inc.
20150087140 - Film forming method, film forming device, and film forming system: A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a... Agent: Tokyo Electron Limited
20150087141 - Method of manufacturing metal grating: A method for making a metal grating is provided. The method includes providing a substrate, applying a metal layer on a surface of the substrate, forming a number of protrusions spaced from each other on a surface of the metal layer, wherein each of the number of protrusions is made... Agent: Hon Hai Precision Industry Co., Ltd.
20150087142 - High electron mobility transistor and manufacturing method thereof: Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate;... Agent: Electronics And Telecommunications Research Institute
20150087143 - Jog design in integrated circuits: A device includes an active region in a semiconductor substrate, a gate strip over and crossing the active region, and a jog over the active region and connected to the gate strip to form a continuous region. The jog is on a side of the gate strip. A first contact... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150087144 - Apparatus and method of manufacturing metal gate semiconductor device: A method of manufacturing a semiconductor device includes providing a semiconductor substrate and forming a structure over the semiconductor substrate. The structure includes a sacrificial dielectric on the semiconductor substrate and a dummy gate over the sacrificial dielectric. The method further includes removing the dummy gate and the sacrificial dielectric... Agent: Taiwan Semiconductor Manufacturing Company Ltd.
20150087145 - Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive: A chip includes an integrated circuit and a carbonic layer. The carbonic layer includes a graphite-like carbon, wherein a lateral conducting path through the graphite-like carbon electrically connects two circuit elements of the integrated circuit.... Agent:
20150087146 - Microelectronic interconnect element with decreased conductor spacing: A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the... Agent:
20150087147 - Methods of forming through substrate interconnects: A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from... Agent:
20150087148 - Etchant composition and methods of fabricating metal wiring and thin film transistor substrate using the same: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt %... Agent: Samsung Display Co., Ltd.
20150087149 - Methods for fabricating integrated circuits using improved masks: Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a mask overlying a material to be etched by forming first hard mask segments overlying the material to be etched, forming sacrificial mandrels overlying the material to be etched and around... Agent: Globalfoundries, Inc.
20150087150 - Semiconductor structures and fabrication method thereof: A method is provided for fabricating a semiconductor structure. The method includes providing a to-be-etched layer; and forming a hard mask layer on the to-be-etched layer. The method also includes forming a photoresist layer on the hard mask layer; and forming a patterned photoresist layer having openings exposing the hard... Agent: Semiconductor Manufacturing International (beijing) Corporation
20150087151 - Masking process and structures formed thereby: A method, e.g., of forming and using a mask, includes forming an inverse mask over a dielectric layer; forming a mask layer conformally over the inverse mask; removing horizontal portions of the mask layer; and after removing the horizontal portions, simultaneously etching the inverse mask and vertical portions of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150087152 - Method of manufacturing howllow-structure metal grating: A method for making a hollow-structure metal grating is provided. The method includes the following steps. First, a substrate is provided. Second, a metal layer is located on a surface of the substrate. Third, a patterned mask layer is formed on a surface of the metal layer. The patterned mask... Agent: Tsinghua University
20150087153 - Method of manufacturing howllow-structure metal grating: A method for making a hollow-structure metal grating is provided. The method includes providing a substrate, forming a patterned mask layer on a surface of the substrate, applying a metal layer with a thickness greater than 10 nanometers on the patterned mask layer, and removing the patterned mask layer by... Agent: Tsinghua University
20150087154 - High aspect ratio etch with combination mask: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The... Agent:
20150087155 - Resist underlayer film-forming composition: (where R1 is a hydrogen atom or a methyl group; each of R2 and R3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R4 is... Agent: Nissan Chemical Industries, Ltd.
20150087156 - Etching method, and method of producing semiconductor substrate product and semiconductor device using the same, as well as kit for preparation of etching liquid: A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and... Agent: Fujifilm Corporation
20150087157 - Electromagnetic dipole for plasma density tuning in a substrate processing chamber: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive... Agent:
20150087158 - Method for depositing a film and film deposition apparatus: A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed... Agent:
20150087159 - Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer readable recording medium: Provided is a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. A method of processing a substrate includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and... Agent: Hitachi Kokusai Electric Inc.
20150087160 - Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium: A substrate processing apparatus includes: a processing gas supply pipe configured to supply a processing gas into a processing chamber; a substrate mounting table that is installed in the processing chamber and on which a substrate to be processed is mounted; a driving unit configured to drive the substrate mounting... Agent: Hitachi Kokusai Electric Inc.
20150087161 - Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten... Agent:
20150087162 - Plasma processing apparatus and plasma processing method: A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided... Agent: Tokyo Electron LimitedPrevious industry: Chemistry: analytical and immunological testing
Next industry: Electrical connectors
RSS FEED for 20150416:
Integrate FreshPatents.com into your RSS reader/aggregator or website to track weekly updates.
For more info, read this article.
Thank you for viewing Semiconductor device manufacturing: process patents on the FreshPatents.com website. These are patent applications which have been filed in the United States. There are a variety ways to browse Semiconductor device manufacturing: process patent applications on our website including browsing by date, agent, inventor, and industry. If you are interested in receiving occasional emails regarding Semiconductor device manufacturing: process patents we recommend signing up for free keyword monitoring by email.
Results in 2.11391 seconds