Semiconductor device manufacturing: process patents - Monitor Patents
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Semiconductor device manufacturing: process

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
11/13/2014 > 72 patent applications in 55 patent subcategories.

20140335631 - Semiconductor defect characterization: The defect-containing die identified from an inspection layer analysis subsequent to a manufacturing step for a wafer including a plurality of die and as well as the faulty die identified from a fault testing of the wafer are processed to identify a subset of the die that both contain a... Agent: Lattice Semiconductor Corporation

20140335632 - Manufacturing method of semiconductor device, and semiconductor device: Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave... Agent: Renesas Electronics Corporation

20140335633 - Separation method, computer storage medium, and separation system: A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed... Agent: Tokyo Electron Limited

20140335634 - Mold release film and method of process for producing a semiconductor device using the same: A mold release film, which is adapted to be disposed on the cavity surface of a mold to form a resin-encapsulated portion by encapsulating a semiconductor element of a semiconductor device with a curable encapsulation resin, has a tensile modulus of elasticity of from 10 to 24 MPa at 132°... Agent: Asahi Glass Company, Limited

20140335635 - Electronic assemblies including a subassembly film and methods of producing the same: Described herein are electronic assemblies including a subassembly film and methods for making the same. In some embodiments, a first subassembly is formed by placing an electronic die at a die placement location on a subassembly film. A second subassembly may be formed by placing the first subassembly at a... Agent: Osram Sylvania Inc.

20140335636 - Method of manufacturing ceramic led packages: Methods of fabricating a light-emitting device are provided. A light-emitting device can be formed from bonding a lens including a plug and a cap to an LED package including a socket configured to receive the plug. The lens can be fabricated using an injection mold formed from a well secured... Agent:

20140335637 - Method of fabricating light extraction substrate for oled: An organic light-emitting device (OLED) which can improve the light extraction efficiency of the OLED, a method of fabricating the same and an OLED including the same. The light extraction substrate is disposed on one surface of an OLED through which light generated from the OLED is emitted outward, and... Agent: Samsung Corning Precision Materials Co., Ltd.

20140335638 - Compounds for use in opto-electrical devices: A composition for use in fabricating opto-electrical devices comprising a solution processable triazine host material and a phosphorescent moiety.... Agent: Sumitomo Chemical Co. Limited

20140335639 - Method for producing organic el display panel: A manufacturing method of an organic EL display panel includes: preparing G, R, and B inks that each include a solvent and respectively include G, R, and B organic light-emitting materials differing from each other in terms of light-emitting wavelength; applying the G ink to G subpixel regions on a... Agent:

20140335640 - Biomems and planar light circuit with integrated package: A BioMEMS microelectromechanical apparatus and for fabricating the same is disclosed. A substrate is provided with at least one signal conduit formed on the substrate. A sacrificial layer of sacrificial material may be deposited on the signal conduit and optionally patterned to remove sacrificial material from outside the packaging covered... Agent:

20140335641 - Method for fabricating sensor: A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a... Agent:

20140335642 - Method for manufacturing organic solar cell: A method of manufacturing an organic solar cell is provided. According to the exemplary embodiments of the present invention, a laminate section can be easily removed from a substrate by causing a cleaning unit to move up and down above the substrate or to move forward and backward in a... Agent: Kolon Industries, Inc.

20140335643 - Method for producing a photovoltaic module: A photovoltaic module having at least one photovoltaic cell may be produced. At least one photovoltaic cell may be arranged on a substrate, covering the substrate and the cell with at least one rear wall. The rear wall may be made from at least one back sheet material, connecting the... Agent: Fraunhofer-gesellschaft Zur F&#xf6 Rderung Der Angewandten Forschung E.v.

20140335644 - Method for producing spot size converter: A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the... Agent: Sumitomo Electric Industries, Ltd.

20140335645 - Photoelectric conversion device and method for producing photoelectric conversion device: A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the... Agent:

20140335646 - Method for forming metal silicide layers: The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence... Agent:

20140335647 - Paste and manufacturing method of solar cell using the same: Disclosed are a paste and a method for manufacturing a solar cell through screen printing said paste. The paste contains inorganic powder; an organic solvent; and a binder, and the inorganic powder has a tap density of 0.01 to 20 g/cm3. An etching mask pattern formed using said paste has... Agent:

20140335648 - Manufacturing method of solid-state dye-sensitized solar cells and electrolyte filling device used therefor: The present description is directed to a manufacturing method of solid-state dye-sensitized solar cells and a solid-state electrolyte filling device used in the manufacturing method. The present invention provides a manufacturing method of dye-sensitized solar cells that fills the solid-state electrolyte more uniformly with enhanced efficiency to secure higher light-to-energy... Agent: Korea Institute Of Science And Technology

20140335649 - Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device: A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition... Agent:

20140335650 - Graphene photodetector: A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do... Agent: International Business Machines Corporation

20140335651 - Inks and pastes for solar cell fabrication: A silicon solar cell is formed with an N-type silicon layer on a P-type silicon semiconductor substrate. An aluminum ink composition is printed on the back of the silicon wafer to form back contact electrodes. The back contact electrodes are sintered to produce an ohmic contact between the electrodes and... Agent:

20140335652 - Semiconductor device and method for manufacturing the same: A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is... Agent:

20140335653 - Transistor, liquid crystal display device, and manufacturing method thereof: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain... Agent:

20140335655 - Integrated circuit package system with mounting structure: An integrated circuit package system includes: providing a mountable structure having a contact pad and an inner pad; mounting an integrated circuit device having a linear through channel over the mountable structure with the linear through channel traversing between an integrated circuit device first side and an integrated circuit device... Agent:

20140335654 - Method and apparatus for semiconductor device fabrication using a reconstituted wafer: Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame. A reconstituted wafer is formed by filling a mold compound into the openings. The mold compound is formed around the chips. Finished dies are... Agent: Infineon Technologies Ag

20140335656 - Semiconductor stack packages and methods of fabricating the same: Semiconductor chip stacks are provided. The semiconductor chip stack includes a semiconductor chip stack including a plurality of first semiconductor chips vertically stacked on a top surface of the interposer, a second semiconductor chip stacked on a bottom surface of the interposer opposite to the semiconductor chip stack, and an... Agent:

20140335657 - Stack packages having fastening element and halogen-free inter-package connector: A stack package includes a lower package including a lower package substrate and a lower semiconductor chip disposed on the lower package substrate, an upper package including an upper package substrate and an upper semiconductor chip disposed on the upper package substrate, a fastening element formed between a top surface... Agent: Samsung Electronics Co., Ltd

20140335659 - Method of manufacturing semiconductor device: A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a... Agent:

20140335658 - Semiconductor device and method of land grid array packaging with bussing lines: A semiconductor device and method of making a semiconductor device is described. An embedded die panel comprising a plurality of semiconductor die separated by saw streets is provided. A conductive layer is formed by an electroless plating process, the conductive layer comprising bussing lines disposed in the saw streets and... Agent:

20140335660 - Bonding structure and method: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.... Agent:

20140335661 - Methods and apparatus to form thin film nanocrystal integrated circuits on ophthalmic devices: This invention discloses methods and apparatus to form thin film nanocrystal integrated circuit transistors upon three dimensionally formed insert devices. In some embodiments, the present invention includes incorporating the three dimensional surfaces with thin film nanocrystal integrated circuit based thin film transistors, electrical interconnects and energization elements into an insert... Agent: Johnson & Johnson Vision Care, Inc.

20140335662 - Methods for forming package-on-package structures having buffer dams: Package-on-Package (PoP) structures and methods of forming the same are disclosed. In some embodiments, a method of forming a PoP structure may include: placing a device die having a plurality of metal posts over a release layer, wherein the release layer is over a first carrier; forming a plurality of... Agent:

20140335663 - Method of making a transitor: A method for manufacturing a transistor includes forming a stack of semiconductor on insulator type layers including at least one substrate, surmounted by a first insulating layer and an active layer to form a channel for the transistor; forming a gate stack on the active layer; producing a source and... Agent: Stmiroelectronics (crolles 2) Sas

20140335664 - Method of manufacturing color filter substrate and method of manufacturing thin film transistor substrate: A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent... Agent:

20140335665 - Low extension resistance iii-v compound fin field effect transistor: A gate stack including a gate dielectric and a gate electrode is formed over at least one compound semiconductor fin provided on an insulating substrate. The at least one compound semiconductor fin is thinned employing the gate stack as an etch mask. Source/drain extension regions are epitaxially deposited on physically... Agent: International Business Machines Corporation

20140335666 - Growth of high-performance iii-nitride transistor passivation layer for gan electronics: Methods for forming a high-quality III-nitride passivation layer on an AlGaN/GaN HEMT. A III-nitride passivation layer is formed on the surface of an AlGaN/GaN HEMT by means of atomic layer epitaxy (ALE), either before or after deposition of a gate metal electrode on the AlGaN barrier layer. Depending on the... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20140335668 - Contact landing pads for a semiconductor device and methods of making same: A method of forming a conductive contact landing pad and a transistor includes forming first and second spaced-apart active regions in a semiconducting substrate, forming a layer of gate insulation material on the first and second active regions, and performing an etching process to remove the layer of gate insulation... Agent: Globalfoundries Inc.

20140335667 - Semiconductor device: A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source. The source metal contact includes a... Agent:

20140335669 - Embedded non-volatile memory: The present invention is a method of incorporating a non-volatile memory into a CMOS process that requires four or fewer masks and limited additional processing steps. The present invention is an epi-silicon or poly-silicon process sequence that is introduced into a standard CMOS process (i) after the MOS transistors' gate... Agent:

20140335670 - Semiconductor device including finfet and diode having reduced defects in depletion region: A semiconductor device comprises a first substrate portion and a second substrate portion disposed a distance away from the first substrate portion. The first substrate portion includes a first active semiconductor layer defining at least one semiconductor fin and a first polycrystalline layer formed directly on the fin. The first... Agent:

20140335671 - Non-volatile memory having 3d array of read/write elements with vertical bit lines and select devices and methods thereof: A three-dimensional memory is formed as an array of memory elements that are formed across multiple layers of planes positioned at different distances above a semiconductor substrate. The memory elements reversibly change a level of electrical conductance in response to a voltage difference being applied across them. The three-dimensional array... Agent:

20140335672 - Process for manufacturing semiconductor transistor device: A process for manufacturing a semiconductor transistor device is provided. The process comprises steps of providing a substrate; forming a patterned hard mask on the substrate; forming a spacer on a sidewall of the patterned hard mask; forming a trench by removing a portion of the substrate not being covered... Agent: United Microeletronics Corporation

20140335673 - Methods of manufacturing finfet semiconductor devices using sacrificial gate patterns and selective oxidization of a fin: A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing... Agent: Samsung Electronics Co., Ltd.

20140335674 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device is provided. The method includes at least the following steps. A gate structure is formed on a substrate. An epitaxial structure is formed on the substrate, wherein the epitaxial structure comprises SiGe, and the Ge concentration in the epitaxial structure is equal to... Agent: United Microelectronics Corp.

20140335675 - Regulating interface layer growth with n2o for two-terminal memory: Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth... Agent:

20140335676 - Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.... Agent:

20140335677 - Method for separating epitaxial layer from growth substrate: The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on... Agent:

20140335678 - Environmentally-assisted technique for transferring devices onto non-conventional substrates: A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers... Agent:

20140335679 - Methods for etching a substrate: In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the... Agent:

20140335680 - Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal: The embodiments described herein generally relate to methods for forming a multi-layer amorphous silicon structure that may be used in thin film transistor devices. In one embodiment, a method includes positioning a substrate comprising a buffer layer in a process chamber, the process chamber comprising a processing region, forming a... Agent:

20140335681 - Graphene transferring methods, device manufacturing method using the same, and substrate structures including graphene: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating... Agent: Samsung Electronics Co., Ltd.

20140335682 - Semiconductor device and manufacturing method thereof: A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third... Agent: Kabushiki Kaisha Toshiba

20140335683 - Method for producing gallium nitride: A method for producing a gallium nitride layer using a pulsed laser is disclosed. The method includes (1) providing a substrate; (2) forming a zinc oxide layer on the substrate; and (3) forming a gallium nitride thin film on the zinc oxide layer by pulsed laser deposition (PLD).... Agent: National Taiwan University

20140335684 - Manufacturing method and manufacturing apparatus of semiconductor device: A manufacturing method for a semiconductor device includes implanting dopants into a silicon carbide substrate, applying a carbon-containing material on at least one surface of the silicon carbide substrate, and heating the silicon carbide substrate having the carbon-containing material applied thereon to form a carbon layer on surfaces of the... Agent: Kabushiki Kaisha Toshiba

20140335685 - Methods of annealing after deposition of gate layers: A method of fabricating a gate structure includes depositing a high dielectric constant (high-k) dielectric layer over a substrate. The method further includes performing a multi-stage preheat high-temperature anneal. Performing the multi-stage preheat high-temperature anneal includes performing a first stage preheat at a temperature in a range from about 400°... Agent:

20140335686 - Laser ablation tape for solder interconnect formation: A tape capable of laser ablation may be used in the formation of microelectronic interconnects, wherein the tape may be attached to bond pads on a microelectronic device and vias may be formed by laser ablation through the tape to expose at least a portion of corresponding bond pads. The... Agent:

20140335687 - Method of making a conductive pillar bump with non-metal sidewall protection structure: A method of making a semiconductor device includes forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the UBM layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the... Agent:

20140335688 - Mask assembly and thin film deposition method using the same: A mask assembly and a thin film deposition method using the same are provided. The mask assembly includes a mask frame including first to fourth sides. The first to fourth sides form a rectangle. Inner sides of the rectangle define a window. The mask frame has a plurality of substrate... Agent: Samsung Display Co., Ltd.

20140335689 - Method of fabricating a semiconductor interconnect structure: A method for forming a semiconductor interconnect structure includes forming a dielectric layer on a substrate and patterning the dielectric layer to form an opening therein. A metal layer fills the opening and covers the dielectric layer. The metal layer is planarized so that it is co-planar with a top... Agent:

20140335690 - Semiconductor device and method for manufacturing the same: A semiconductor device includes: a contact hole formed over a structure including a conductive pattern; a contact plug formed in the contact hole; a first metal silicide film surrounding the contact plug; and a second metal silicide film formed over the contact plug.... Agent:

20140335691 - Manufacturing method of metal wire and thin transistor array panel: A manufacturing method of a wire including: forming a lower layer on a substrate; forming a middle layer on the lower layer; forming an upper layer on the middle layer; forming, exposing, and developing a photoresist layer on the upper layer to form a photoresist pattern; and etching the upper... Agent: Samsung Display Co., Ltd.

20140335692 - Method for forming a resist under layer film and patterning process: The present invention provides a method for forming a resist under layer film used in a lithography process, comprising: a process for applying a composition for forming a resist under layer film containing an organic compound having an aromatic unit on a substrate; and a process for heat-treating the resist... Agent: Shin-etsu Chemical Co., Ltd.

20140335693 - Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system: A substrate processing method of the present disclosure includes forming a film on a workpiece using a processing gas in a processing chamber with a setting temperature profile including increase or decrease of a temperature; and etching the film. An etching rate of the film in the etching depends on... Agent: Tokyo Electron Limited

20140335694 - Methods of fabricating substrates: A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first... Agent:

20140335695 - External uv light sources to minimize asymmetric resist pattern trimming rate for three dimensional semiconductor chip manufacture: Embodiments of the present invention provide an apparatus and methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one embodiment, a method of forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed... Agent:

20140335696 - Plasma processing apparatus and plasma processing method: The plasma processing apparatus is provided with a chamber 11, a plasma source 13 which generates plasma inside the chamber 11, a stage 16 which is provided inside the chamber 11 and places a carrier 5 thereon, a cover 31 which is arranged above the stage 16 to cover a... Agent: Panasonic Corporation

20140335697 - Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization: An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the low-k material while maintaining chuck temperature at about 45 to 80° C. and (b) metal hard mask rounding and Ti-based... Agent: Lam Research Corporation

20140335699 - Application of fluids to substrates: Various embodiments relate to application of a fluid to a substrate. The fluid is locally heated, for example, to obtain a desired thickness profile.... Agent: Infineon Technologies Ag

20140335698 - Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface: A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be... Agent: Lam Research Corporation

20140335700 - Carbon layers for high temperature processes: Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking.... Agent:

20140335701 - Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium: A thin film containing boron and a borazine ring structure is formed on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound. The cycle includes: supplying a source gas containing boron and a halogen... Agent: Hitachi Kokusai Electric Inc.

20140335702 - Preparation of cerium-containing precursor and deposition of cerium-containing films: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic... Agent:

  
11/06/2014 > 56 patent applications in 52 patent subcategories.

20140329337 - Perpendicular spin transfer torque memory (sttm) device having offset cells and method to form same: Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array... Agent:

20140329338 - Method for preparing nano-sheet array structure of group v-vi semiconductor: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group... Agent: National Tsing Hua University

20140329339 - Defect detection and correction of pixel circuits for amoled displays: A method of testing an array-based semiconductor device for defects during fabrication of the semiconductor device detects defects in said entities forming the semiconductor device at an intermediate stage in the fabrication of multiple types of entities forming the semiconductor device; determines whether the detected defects exceed preselected thresholds for... Agent: Ignis Innovation Inc.

20140329340 - Heat treatment method and heat treatment apparatus: After a substrate implanted with impurities is heated to a preheating temperature, the front surface of the substrate is heated to a target temperature by irradiating the front surface of the substrate with a flash of light. Further, the flash irradiation is continued to maintain the temperature of the front... Agent:

20140329341 - Bonding method, bonding apparatus and bonding system: A bonding method according to an exemplary embodiment of the present disclosure includes a first holding processing, a second holding processing, a temporary bonding processing, a temperature increasing processing and a main bonding processing. In the first holding processing, a target substrate is held. In the second holding processing, a... Agent: Tokyo Electron Limited

20140329342 - Method for inspecting packaging effectiveness of oled panel: The present invention provides a method for inspecting packaging effectiveness of an OLED panel, including: (1) in a manufacture process of an OLED component, forming a test block on a substrate, wherein the test block is made of an active metal, and then forming a plurality of test electrodes, wherein... Agent:

20140329343 - Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source... Agent: Samsung Display Co., Ltd.

20140329344 - Testing an electrical connection of a device cap: A method of testing a device includes setting a potential of a cap terminal of the device to a first voltage, setting a potential of a self test plate of the device to a testing voltage, and detecting a first displacement of a proof mass of the device when the... Agent: Freescale Semiconductor, Inc.

20140329345 - Manufacturing method of organic light emitting diode display: A manufacturing method of an organic light emitting diode (OLED) display includes manufacturing a mother substrate including a plurality of panels formed with a plurality of anodes for each pixel and a test pad connected to each anode of the panel. The method further includes loading the mother substrate into... Agent: Samsung Display Co., Ltd.

20140329346 - Element connecting board, producing method thereof, and light emitting diode device: An element-connecting board is a lead frame for allowing a light emitting diode element to be connected to one side thereof in a thickness direction. The element-connecting board includes the lead frame which is provided with a plurality of leads disposed with spaces from each other and a first insulating... Agent: Nitto Denko Corporation

20140329347 - Method for manufacturing light emitting diodes: An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN... Agent: Advanced Optoelectronic Technology, Inc.

20140329348 - Method for manufacturing semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer;... Agent:

20140329349 - Organic layer deposition apparatus, and method of manufacturing organic light-emitting display apparatus by using the same: An organic layer deposition apparatus includes a conveyer unit including a transfer unit, a first conveyer unit, and a second conveyer unit; and a deposition unit including one or more organic layer deposition assemblies for depositing an organic layer on a substrate attached to the transfer unit. Each of the... Agent: Samsung Display Co., Ltd.

20140329350 - Method for producing a light-emitting diode: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer,... Agent:

20140329351 - Fabricating a small-scale radiation detector: A method for a constructing radiation detector includes fabricating a multi-layer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality of sacrificial layers, and a plurality of insulating layers, forming a cavity within the multi-layer structure, filling the cavity with a gas that ionizes... Agent: International Business Machines Corporation

20140329352 - Photovoltaic cell and fabrication method thereof: The present structure and method for fabrication thereof provides a photovoltaic cell structure for converting light energy into electrical energy. According to one embodiment, a pillared photovoltaic cell structure comprises an array of pillars that are situated closely to each other to take advantage of both the wave-like properties and... Agent:

20140329353 - Manufacturing method of semiconductor device, semiconductor device and electronic apparatus: A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture... Agent: Sony Corporation

20140329354 - Process for imprint patterning materials in thin-film devices: The present disclosure provides a method for patterning materials that are or are on top of chemically sensitive organic semiconductors. The method employs imprint lithography and a bilayer resist structure that simultaneously protects lower layers from harmful solvents and allows for cleaner liftoff by producing an undercut geometry to the... Agent:

20140329355 - Techniques for enhancing performance of photovoltaic devices: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0≦x≦1, and ranges therebetween; 0≦y≦0.2, and ranges therebetween; 0.001≦z≦0.02, and ranges therebetween; and 0≦w≦2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film... Agent:

20140329356 - Curable acrylate based printing medium: An acrylate-based curable printing medium is disclosed. Acrylates, in the form of monomers, dimers, trimers and oligomers, as well as resins, form an interpenetrating polymer network by crosslinking, which is effected by heat, and optionally peroxide curing agents. Formulations can be tailored to achieve desired properties of the cured polymer... Agent:

20140329357 - Tellurium compounds useful for deposition of tellurium containing materials: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile... Agent:

20140329358 - Electronic devices and components for high efficiency power circuits: An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of... Agent:

20140329359 - Process for making a semiconductor system: Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact... Agent: Rambus Inc.

20140329361 - Method for mounting a semiconductor chip on a carrier: A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main... Agent:

20140329360 - Method of manufacturing lead frame: There is provided a method of manufacturing a lead frame, the method including: preparing a lead frame raw material; forming openings in the lead frame raw material so that the lead frame material includes: a die pad; a die pad supporting portion supporting the die pad; a rail portion supporting... Agent: Samsung Techwin Co., Ltd.

20140329362 - Qfn/son-compatible package: A leadless package and method for manufacturing silicon based leadless QFN/SON compatible packages are described. In addition the package allows for hermetic sealing of devices while maintaining electrical and optical access. Micro-vias with feed-through metallization through a silicon structure facilitates a surface mount technology compatible silicon package with bottom SMT... Agent:

20140329363 - Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus: A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a... Agent: Shin-etsu Chemical Co., Ltd.

20140329364 - Manufacturing method of power semiconductor: A manufacturing method of a power semiconductor includes steps of providing a first semiconductor substrate and a second semiconductor substrate, forming a metal oxide semiconductor layer on a first surface of the first semiconductor substrate, grinding a second surface of the first semiconductor substrate, forming a N-type buffer layer and... Agent: Mosel Vitelic Inc.

20140329365 - Semiconductor device and method for manufacturing the same: An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer... Agent:

20140329366 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon... Agent: Sumitomo Electric Device Innovations, Inc.

20140329367 - Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices: Methods of fabricating a semiconductor device include forming a first semiconductor layer of a first conductivity type and having a first dopant concentration, and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer has a second dopant concentration that is less than the first dopant... Agent:

20140329368 - Bipolar transistor with embedded epitaxial external base region and method of forming the same: The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region,... Agent:

20140329369 - Pinched center resistive change memory cell: The present invention is a method for forming a vertically oriented element having a narrower area near its center away from either end. The present invention will find applicability in other memory cell structures. The element will have a narrow portion towards its center such that current density will be... Agent:

20140329370 - Layer transfer of silicon onto iii-nitride material for heterogenous integration: An integrated silicon and III-N semiconductor device may be formed by growing III-N semiconductor material on a first silicon substrate having a first orientation. A second silicon substrate with a second, different, orientation has a release layer between a silicon device film and a carrier wafer. The silicon device film... Agent: Texas Instruments Incorporated

20140329372 - Method for manufacturing soi wafer: A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal... Agent: Shin-etsu Handotai Co., Ltd.

20140329371 - Soi substrate, method for manufacturing the same, and semiconductor device: An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a... Agent:

20140329373 - Method of dicing a wafer: A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with... Agent:

20140329374 - Methods of fabricating quantum well field effect transistors having multiple delta doped layers: Methods of fabricating quantum well field effect transistors are provided. The methods may include forming a first barrier layer including a first delta doped layer on a quantum well layer and forming a second barrier layer including a second delta doped layer selectively on a portion of the first barrier... Agent: Samsung Electronics Co., Ltd.

20140329375 - Methods for depositing amorphous silicon: Methods for depositing an amorphous silicon layer on wafers are disclosed. A process wafer, a control wafer, and a dummy wafer may be loaded into a chamber where an amorphous silicon layer may be deposited on the process wafer. Afterwards, the process wafer and the control wafer may be removed... Agent:

20140329376 - Structure and method of forming metamorphic heteroepi materials and iii-v channel structures on si: Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in... Agent: Applied Materials, Inc.

20140329377 - Supply source and method for enriched selenium ion implantation: A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is... Agent:

20140329378 - Gate electrode with depletion suppression and tunable workfunction: Semiconductor device performance is improved via a gate structure having a tunable effective workfunction and reduced gate depletion effects. According to an example embodiment, the design threshold voltage of a semiconductor device is adjusted in a manner that includes providing a gate having a workfunction that enables operation of the... Agent: The Board Of Trustees Of The Leland Stanford Junior University

20140329379 - Patterning method for forming staircase structure and method for fabricating semiconductor device using the same: A patterning method includes forming a photoresist layer on a processing layer and exposing the photoresist layer using a standing wave/defocusing exposure to produce a photoresist layer having a staircase pattern.... Agent: Samsung Electronics Co., Ltd.

20140329380 - Formation of semiconductor structures with variable gate lengths: A plurality of doped sacrificial semiconductor material portions of a first width and a plurality of doped sacrificial semiconductor material portions of a second width, which is different from the first width, are provided on a sacrificial gate dielectric material. Exposed portions of the sacrificial dielectric material are removed. A... Agent: International Business Machines Corporation

20140329381 - Tsv backside reveal structure and exposing process: A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back... Agent: National Center For Advanced Packaging (ncap China)

20140329382 - Method of fabricating semiconductor device having bump: Provided is a method of fabricating a semiconductor device. The method includes forming a photoresist pattern having a side recess on a seed metal layer and forming a plating layer having a hem using a plating process to fill the side recess.... Agent: Samsung Electronics Co., Ltd.

20140329383 - Semiconductor device with embedded heat spreading: A semiconductor device includes a semiconductor substrate and a plurality of clock drivers, wherein the plurality of clock drivers comprises substantially all clock drivers of the semiconductor device, and an interconnect region over the semiconductor substrate, wherein the interconnect region comprises a plurality of heat spreaders, wherein at least 25%... Agent:

20140329384 - Integrated circuit device and method for manufacturing same: According to one embodiment, an integrated circuit device includes a plurality of interconnects and a contact via. The plurality of interconnects are arranged parallel to each other. The contact via is connected to each of the interconnects. A protrusion is formed at a portion of the each of the interconnects... Agent:

20140329385 - Method for manufacturing semiconductor thick metal structure: A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti—TiN laminated structure is used as an anti-reflection layer to implement 4 μm metal etching without residue. In the metal... Agent: Csmc Technologies Fab1 Co., Ltd.

20140329386 - Semiconductor package and method for manufacturing the same: A semiconductor package includes a semiconductor chip having a front surface and a back surface facing away from the front surface; a through electrode formed in the semiconductor chip and passing through the front surface and the back surface; and a contamination preventing layer formed in the semiconductor chip, the... Agent:

20140329387 - Sonos device and method for fabricating the same: An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer layer... Agent:

20140329388 - Methods of patterning features having differing widths: Disclosed herein are methods of patterning features that have differing widths. In one example, the method includes forming a layer of material above a semiconductor substrate, forming a masking layer above the layer of material, wherein the masking layer is comprised of a first plurality features positioned above a first... Agent: Globalfoundries Inc.

20140329389 - Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same: Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 μm. Each of the multiple nano-ribbons corresponds... Agent:

20140329390 - Plasma treatment method and plasma treatment device: A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CH2F2, etc, is used to deposit a protective film. In a second plasma treatment step,... Agent: Tokyo Electron Limited

20140329391 - Continuous plasma etch process: A method for etching features with a continuous plasma is provided. A first plasma process is provided, comprising providing a flow of a first process gas into a process chamber, maintaining the continuous plasma, and stopping the flow of the first process gas into the process chamber. A transition process... Agent: Lam Research Corporation

20140329392 - Coatings for relatively movable surfaces: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range... Agent:

  
10/30/2014 > 100 patent applications in 70 patent subcategories.

20140322828 - Method for manufacturing magnetoresistance component: A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in... Agent:

20140322827 - Method for packaging display device and apparatus therefor: The present application provides a method for packaging a display device and an apparatus therefor. The method includes: providing a display device, a platform, a laser beam and a magnetic mechanism; wherein the display device includes a light emitting element, the light emitting element includes at least one effective light... Agent: Everdisplay Optronics (shanghai) Limited

20140322829 - Semicondcutor device and method for fabricating the same: A semiconductor device includes a pinned layer having a magnetic direction permanently set to a first direction, a tunnel insulating layer arranged on the pinned layer, a free layer arranged on the tunnel insulating layer and having a changeable magnetic direction, and a magnetic induction layer formed to surround the... Agent: Sk Hynix Inc.

20140322830 - Semiconductor device and manufacturing method thereof: Such a device is disclosed that includes: redundancy circuits for replacing defective memory cells included in a memory cell array; an electrical fuse circuit that stores addresses of the defective memory cells; a data determination circuit that generates a determination signal by determining whether test data read from the memory... Agent: Ps4 Luxco S.a.r.l.

20140322831 - Lithography apparatus, lithography method, and method of manufacturing article: A lithography apparatus for performing pattern formation on a substrate includes a stage configured to hold the substrate and be movable, an optical system configured to irradiate the substrate with an energy beam for the pattern formation, and a controller configured to set an arrangement of first and second marks... Agent: Canon Kabushiki Kaisha

20140322833 - Irradiation apparatus for irradiating charged particle beam, method for irradiation of charged particle beam, and method for manufacturing article: An apparatus includes an optical system configured to irradiate a substrate with a charged particle beam, a control unit configured to control an irradiation position of the charged particle beam, and a first measurement unit and a second measurement unit each configured to measure a surface position of the substrate.... Agent: Canon Kabushiki Kaisha

20140322832 - Method of fabricating semiconductor device: According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact... Agent:

20140322834 - Apparatus and method for bonding substrates: An apparatus for bonding substrates and a method of bonding substrates are provided. In accordance with one exemplary embodiment of the present invention, a first plate to mount a first substrate is provided. A chamber body movably connected to the first plate is provided. A second plate that is placed... Agent: Ltrin Co., Ltd

20140322835 - Method of manufacturing liquid discharge head: A method of manufacturing a liquid discharge head is provided. The method includes forming a heating element on a substrate in which a semiconductor element is arranged. The method further includes forming a protection layer to contact an upper surface of the heating element. Annealing is performed in a hydrogen-containing... Agent: Canon Kabushiki Kaisha

20140322836 - Thin-film transistor array substrate, organic light-emitting display having the same, and method of manufacturing the organic light-emitting display: A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel... Agent:

20140322837 - Method of forming nanocrystals and method of manufacturing an organic light-emitting display apparatus including a thin film having nanocrystals: A method of forming nanocrystals includes loading a substrate into a chamber, applying a first voltage to a first target to form a thin film including a first metal compound on the substrate by sputtering, and applying a second voltage to a second target and forming nanocrystals in the thin... Agent: Samsung Display Co., Ltd.

20140322838 - Semiconductor optoelectronic device and the method of manufacturing the same: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor... Agent:

20140322841 - Light emitting element module substrate, light emitting element module, and illuminating device: According to an aspect of the invention, there is provided a light emitting element module substrate including: a laminated plate; and a metal layer. The laminated plate includes a base metal plate and an insulating layer provided on the base metal plate. The metal layer is provided on the insulating... Agent: Toshiba Lighting & Technology Corporation

20140322839 - Method of manufacturing led component by integrating epitaxial structure and package substrate together: An integral LED component is mounted into a hollow carrier. The carrier has two conductive electrodes with opposite polarities. The LED component comprises a substrate, N number of LED epitaxial structures where N is a number greater than one, a third electrode and a fourth electrode. The N number of... Agent:

20140322840 - Semiconductor laser assembly and packaging system: A system for self-aligning assembly and packaging of semiconductor lasers allows reduction of time, cost and testing expenses for high power density systems. A laser package mounting system, such as a modified TO-can (transistor outline can), has modifications that increase heat transfer from the active laser to a heat exchanger... Agent:

20140322843 - Annealing apparatus and annealing method: The present disclosure relates to an annealing apparatus and an annealing method, which are applied to the packaging art of the AMOLED panel, wherein the annealing apparatus comprises an electromagnetic wave generator coupled with a plurality of irradiators and comprises a plate whose surface is provided with the irradiators and... Agent: Everdisplay Optronics (shanghai) Limited

20140322842 - Donor substrate, method of manufacturing donor substrate, and method of manufacturing organic light-emitting display device: Aspects of the present invention are directed toward donor substrate, method of manufacturing donor substrate, and method of manufacturing organic light-emitting display device. According to an embodiment of the present invention, a donor substrate includes a base layer which includes an element region and an encapsulation region surrounding the element... Agent: Samsung Display Co., Ltd.

20140322844 - Method for manufacturing light emitting device: Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition,... Agent: Nichia Corporation

20140322845 - Device for monitoring liquid crystal display and method for manufacturing liquid crystal display: A device for monitoring a liquid crystal display includes: a substrate including a display region and a non-display region disposed at an edge of the display region. The display region includes: a thin film transistor disposed on the substrate, a pixel electrode disposed on the substrate and connected to the... Agent: Samsung Display Co., Ltd.

20140322846 - Liquid crystal display and method for manufacturing the same: Provided is a liquid crystal display including: a first substrate; a thin film transistor disposed on the first substrate; a passivation layer disposed on the thin film transistor and comprising a contact hole exposing an electrode of the thin film transistor; a pixel electrode disposed on the passivation layer and... Agent:

20140322847 - Wafer processing method: A wafer processing method including a modified layer forming step of applying a laser beam having a transmission wavelength to a substrate from the back side of the substrate along division lines. The modified layer forming step includes the steps of making the polarization plane of linearly polarized light of... Agent: Disco Corporation

20140322848 - Thermal transfer method and method of manufacturing an organic light emitting display device using the same: A thermal transfer method includes a step of forming a donor member having a base layer, a light-to-heat conversion layer disposed on the base layer, an intermediate layer disposed on the light-to-heat conversion layer, an organic transfer layer disposed on the intermediate layer, and a first protecting film disposed over... Agent: Samsung Display Co., Ltd.

20140322849 - Vapor deposition apparatus, deposition method using the same, and method of manufacturing organic light-emitting display apparatus: A vapor deposition apparatus for forming a deposition layer on a substrate includes a supply unit that is supplied with a first raw gas to form the deposition layer and an auxiliary gas, wherein the auxiliary gas does not constitute a raw material to form the deposition layer, a reaction... Agent: Samsung Display Co., Ltd.

20140322852 - Deposition apparatus and method of manufacturing organic light emitting diode display: A deposition apparatus includes a deposition chamber, a plurality of substrate holders comprising a first holder configured to maintain a substrate at a first substrate position in the deposition chamber and a second holder configured to maintain another substrate at a second substrate position in the deposition chamber, a deposition... Agent: Samsung Display Co., Ltd.

20140322850 - Method for forming an organic device: The present invention provides a method for forming an organic device having a patterned conductive layer that includes providing a substrate, depositing organic materials over the substrate to form one or more organic layers, coating a photoresist solution over the one or more organic layers to form a photo-patternable layer,... Agent: Orthogonal, Inc.

20140322853 - Novel zwitterionic polyelectrolytes as efficient interface materials for application in optoelectronic devices: Facile ways towards the development of linear and brush-type zwitterionic conjugated polyelectrolytes possessing hole or electron blocking abilities are presented using combination of polymerization techniques, such as Suzuki or Stille cross coupling, Grignard Metathesis Polymerization and Atom transfer radical polymerization. These zwitterionic conjugated polyelectrolytes will serve as excellent interface materials... Agent: Advent Technologies Inc.

20140322851 - Tablet for plasma coating system, method of manufacturing the same, and method of manufacturing a thin film using the method of manufacturing the tablet: A tablet for a plasma coating system having a first part that includes a first material having a first sublimation point at a first pressure and a second part that is disposed on the first part and comprises a second material having a second melting point at the first pressure,... Agent: Samsung Display Co., Ltd.

20140322854 - Method for manufacturing a mems sensor: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first... Agent: Rohm Co., Ltd.

20140322855 - Module assembly for thin solar cells: Solar cells are packaged by placing the solar cells between sheets of encapsulants. The encapsulants are exposed to ultraviolet (UV) light to cure the encapsulants and bond the encapsulants together to encapsulate the solar cells. The UV curing steps may be performed to bond one of the encapsulants to a... Agent: Sunpower Corporation

20140322856 - Method of making interposer package for cmos image sensor: An image sensor package and method of manufacture that includes a crystalline handler with conductive elements extending therethrough, an image sensor chip disposed in a cavity of the handler, and a transparent substrate disposed over the cavity and bonded to both the handler and image sensor chip. The transparent substrate... Agent:

20140322857 - Dark current reduction for back side illuminated image sensor: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching... Agent:

20140322858 - Solar cells with patterned antireflective surfaces: Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant... Agent: Natcore Technology, Inc.

20140322859 - Fabrication of ionic liquid electrodeposited cu-sn-zn-s-se thin films and method of making: A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.... Agent:

20140322860 - Metal contact scheme for solar cells: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions;... Agent: Newsouth Innovations Pty Limited

20140322861 - Solar battery, manufacturing method thereof, and solar battery module: A solar battery includes a transparent electrode and a collector electrode in this order on the surface of a light incident surface side of a photoelectric conversion layer. The collector electrode is formed in a predetermined region on the photoelectric conversion layer and a first transparent electrode of the transparent... Agent: Mitsubishi Electric Corporation

20140322862 - Method of making a resistive random access memory device with metal-doped resistive switching layer: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming... Agent: AsmIPHolding B.v.

20140322864 - Low cte interposer: An interconnection component includes a first support portion has a plurality of first conductive vias extending therethrough substantially perpendicular to surfaces thereof such that each via has a first end adjacent a first surface and a second end adjacent a second surface. A second support portion has a plurality of... Agent:

20140322863 - Metal bump joint structure and methods of forming: A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound... Agent:

20140322865 - Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant: A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second... Agent:

20140322866 - Package for three dimensional integrated circuit: A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step... Agent:

20140322867 - Conductive via structures for routing porosity and low via resistance, and processes of making: An integrated circuit structure includes a first conductive layer (MET4) including a first forked conductive structure (310), an insulating layer (320, ILD45) substantially disposed over the first forked conductive structure (310), a plurality of conductive vias (331-334) through the insulating layer (ILD45) and electrically connecting with the first forked conductive... Agent:

20140322868 - Barrier layer on bump and non-wettable coating on trace: Some implementations provide a semiconductor device that includes a die, an under bump metallization (UBM) structure coupled to the die, and a barrier layer. The UBM structure has a first oxide property. The barrier layer has a second oxide property that is more resistant to oxide removal from a flux... Agent:

20140322869 - Method for manufacturing chip package structure: A method for manufacturing a chip package structure includes following steps. A carrier having a metal layer is provided. A patterned photoresist layer is formed on the metal layer. The patterned photoresist layer has a plurality of first openings exposing a portion of the metal layer. Connection terminals are formed... Agent: Chipmos Technologies Inc.

20140322870 - Sram cell with different crystal orientation than associated logic: An integrated circuit containing logic transistors and an array of SRAM cells in which the logic transistors are formed in semiconductor material with one crystal orientation and the SRAM cells are formed in a second semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic... Agent:

20140322871 - Partial soi on power device for breakdown voltage improvement: Some embodiments of the present disclosure relate to a method to increase breakdown voltage of a power device. A power device is formed on a silicon-on-insulator (SOI) wafer made up of a device wafer, a handle wafer, and an intermediate oxide layer. A recess is formed in a lower surface... Agent:

20140322872 - Method for making semiconductor device with gate profile control: A method for forming a semiconductor device includes forming a gate structure over a semiconductor substrate. The gate structure includes a gate electrode, at least two hard mask (HM) layers over the gate electrode, and a spacer abutting a side wall of the gate electrode and the at least two... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20140322873 - High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The method may include doping the stressing layer with dopants. The method may include forming a silicide layer on the stressing layer. Moreover, the stressing layer... Agent:

20140322874 - Nonvolatile semiconductor device and method of manufacturing the same: A charge storage layer interposed between a memory gate electrode and a semiconductor substrate is formed shorter than a gate length of the memory gate electrode or a length of insulating films so as to make the overlapping amount of the charge storage layer and a source region to be... Agent:

20140322875 - Nonvolatile memory device and method for fabricating the same: A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second sidewall and an upper surface of the floating gate, and a control gate formed over the dielectric layer.... Agent:

20140322876 - Nonvolatile memory device and method for fabricating the same: A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second sidewall and an upper surface of the floating gate, and a control gate formed over the dielectric layer.... Agent: Sk Hynix Inc.

20140322877 - Semiconductor device and method for manufacturing the same: A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench through a gate insulating film. A dummy gate electrode is formed in the second trench through a... Agent: Renesas Electronics Corporation

20140322878 - Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same: A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted,... Agent: Renesas Electronics Corporation

20140322880 - Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process: A method of manufacturing a transistor by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer.... Agent: Sony Corporation

20140322879 - Method of forming sigma-shaped trench: A method of forming a Σ-shaped trench is disclosed. The method includes: providing a silicon substrate; and sequentially performing a plasma etching process and a wet etching process on the silicon substrate to form a Σ-shaped trench therein. The plasma etching process includes: horizontally etching the silicon substrate using a... Agent: Shanghai Huali Microelectronics Corproation

20140322881 - Semiconductor devices and methods of manufacturing the same: Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain... Agent:

20140322882 - Methods of forming field effect transistors, including forming source and drain regions in recesses of semiconductor fins: Methods of forming a fin-shaped Field Effect Transistor (FinFET) are provided. The methods may include selectively incorporating source/drain extension-region dopants into source and drain regions of a semiconductor fin, using a mask to block incorporation of the source/drain extension-region dopants into at least portions of the semiconductor fin. The methods... Agent: Samsung Electronics Co., Ltd.

20140322883 - Method for fabricating metal-oxide semiconductor transistor: A method for fabricating a metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a silicon layer on the semiconductor substrate; performing a first photo-etching process on the silicon layer for forming a gate pattern; forming an epitaxial layer in the semiconductor... Agent:

20140322889 - High voltage resistor with biased-well: Provided is a high voltage semiconductor device. The semiconductor device includes a doped well located in a substrate that is oppositely doped. The semiconductor device includes a dielectric structure located on the doped well. A portion of the doped well adjacent the dielectric structure has a higher doping concentration than... Agent:

20140322885 - Method of making a resistive random access memory device: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive... Agent: AsmIPHolding B.v.

20140322884 - Nonvolatile resistive memory element with a silicon-based switching layer: A nonvolatile resistive memory element includes a novel switching layer and methods of forming the same. The switching layer includes a material having bistable resistance properties and formed by bonding silicon to oxygen or nitrogen. The switching layer may include at least one of SiOx, SiOxNy, or SiNx. Advantageously, the... Agent: Intermolecular Inc.

20140322886 - Resistive memory device and fabrication method thereof: A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and... Agent: Sk Hynix Inc.

20140322887 - Surface treatment to improve resistive-switching characteristics: This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters.... Agent:

20140322888 - Variable resistance memory device and method of fabricating the same: According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top... Agent:

20140322890 - Polishing systems and methods for removing conductive material from microelectronic substrates: Polishing systems and methods for removing conductive material (e.g., noble metals) from microelectronic substrates are disclosed herein. Several embodiments of the methods include forming an aperture in a substrate material, disposing a conductive material on the substrate material and in the aperture, and disposing a fill material on the conductive... Agent:

20140322891 - Method of forming shallow trench isolations: A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the... Agent:

20140322892 - Multi-wafer pair anodic bonding apparatus and method: An electric field concurrently anodically bonds together wafers of each of a plurality of independent wafer pairs.... Agent: Hewlett-packard Development Company, L.p.

20140322893 - Manufacturing method of semiconductor device: A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation... Agent: Fujifilm Corporation

20140322894 - Method for handling a thin substrate and for substrate capping: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening... Agent:

20140322895 - Method for manufacturing a bonded soi wafer: According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing... Agent: Shin-etsu Handotai Co., Ltd.

20140322897 - Flow controlled liner having spatially distributed gas passages: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored... Agent:

20140322898 - Nanocomposite and method of making thereof: An embodiment of an inorganic nanocomposite includes a nanoparticle phase and a matrix phase. The nanoparticle phase includes nanoparticles that are arranged in a repeating structure. In an embodiment, the nanoparticles have a spherical or pseudo-spherical shape and are incompatible with hydrazine. In another embodiment, the nanoparticles have neither a... Agent:

20140322899 - Substrate recycling method: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate;... Agent: Seoul Viosys Co., Ltd.

20140322900 - Low-pressure chemical vapor deposition apparatus and thin-film deposition method thereof: A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace... Agent: Wuxi China Resources Huajing Microelectronics Co., Ltd

20140322901 - Semiconductor nanocrystals, method for preparing, and products: A method for preparing semiconductor nanocrystals includes adding a non-protonated surface modification agent to semiconductor nanocrystal cores in a liquid medium to form a mixture; adding one or more precursors for forming a shell including a semiconductor material to the mixture under conditions for forming the shell over at least... Agent: Qd Vision, Inc.

20140322903 - Enriched silicon precursor compositions and apparatus and processes for utilizing same: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above... Agent:

20140322902 - Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process: A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process benefits associated with ion implanting such dopant gases. For a given flow rate within a prescribed range, operating at a reduced... Agent:

20140322904 - Semiconductor device and method for fabricating the same: An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side , and a bump connected with the through silicon via.... Agent:

20140322905 - Method of forming the buffer layer in the ltps products: The present disclosure disclosed a method of forming the buffer layer in the LTPS products. The method comprises the following steps: heating the substrate to make the alkali metal ions diffuse to the surface of the glass; washing the substrate by acid to remove the alkali metal ions on the... Agent: Everdisplay Optronics (shanghai) Limited

20140322906 - Method for patterned doping of a semiconductor: A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of... Agent: Natcore Technology, Inc.

20140322907 - Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor: A method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes depositing and etching gate material to partially fill a space between the pillars and to form a word line for the memory cells, etching... Agent:

20140322908 - Method of making bond pad: A method of making a bonding pad for a semiconductor device which includes forming a first region over a buffer layer, where the first region includes aluminum and having a first average grain size. The method further includes forming a second region over the first region, where the second region... Agent:

20140322909 - Wafer backside interconnect structure connected to tsvs: An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and... Agent:

20140322910 - Via-free interconnect structure with self-aligned metal line interconnections: The present disclosure provides a method for forming a semiconductor device. The semiconductor device includes a first conductive line disposed over a substrate. The first conductive line is located in a first interconnect layer and extends along a first direction. The semiconductor device includes a second conductive line and a... Agent:

20140322911 - Semiconductor devices and methods of forming the same: A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that... Agent:

20140322912 - Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.... Agent: Enthone Inc.

20140322913 - Polishing composition: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less.... Agent:

20140322914 - Gap embedding composition, method of embedding gap and method of producing semiconductor device by using the composition: A gap embedding composition used for embedding a patterned gap formed between photosensitive resin film portions on a semiconductor substrate surface, the gap embedding composition, having a hydrolysis condensate having an average molecular weight of 3,000 to 50,000 derived from an alkoxysilane raw material including at least alkyltrialkoxysilane and an... Agent: Fujifilm Corporation

20140322915 - Semiconductor device having hard mask structure and fine pattern and forming method thereof: A method for fabricating a semiconductor device includes forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, forming a plurality of second hard mask patterns filling the plurality of trenches, forming a plurality of first opening units in the plurality of... Agent: Sk Hynix Inc.

20140322916 - Methods of fabricating a semiconductor device using voids in a sacrificial layer: A semiconductor device is fabricated by forming first holes arranged along a first direction on an etch-target layer, forming dielectric patterns in the first holes, conformally forming a barrier layer on the dielectric patterns, forming a sacrificial layer on the barrier layer to define a first void, partially removing the... Agent:

20140322917 - Grapho-epitaxy dsa process with dimension control of template pattern: A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than... Agent:

20140322918 - Micro-posts having improved uniformity and a method of manufacture thereof: As discussed herein, there is presented an apparatus comprising micro-posts. The apparatus includes a substrate having a planar surface, a plurality of micro-posts located on the planar surface, wherein each micro-post has a base portion on the planar surface and a post portion located on a top surface of the... Agent:

20140322919 - Semiconductor wafer chuck and method: A semiconductor wafer spinning chuck includes a rotatable base, a plurality of arms, upstanding from the base, a selectively releasable clamping mechanism, associated with the arms, and a spray nozzle, extending through the base. The clamping mechanism has a first portion configured to mechanically clamp an edge of a first... Agent: Jst Manufacturing Inc.

20140322920 - Method of manufacturing semiconductor device using the same: Provided are a deposition apparatus and a method of manufacturing a semiconductor device. In the method, a reaction chamber provided with a gaseous source supply unit and a liquid source supply unit is prepared, and an etch stop layer is formed on a substrate by using a gaseous source. Then,... Agent:

20140322921 - Method and apparatus for microwave treatment of dielectric films: A method for processing a dielectric film on a substrate comprises: depositing a porous dielectric film on a substrate; removing the porogen; stuffing the film with a protective polymeric material; performing at least one intermediate processing step on the stuffed dielectric film; placing the film in a microwave applicator cavity... Agent:

20140322922 - Method and apparatus for microwave treatment of dielectric films: An apparatus for thermal treatment of dielectric films on substrates comprises: a microwave applicator cavity and microwave power source; a workpiece to be heated in the cavity, comprising a porous coating on a selected substrate; and, a means of introducing a controlled amount of a polar solvent into said porous... Agent:

20140322923 - Dielectrics containing at least one of a refractory metal or a non-refractory metal: Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum... Agent:

20140322924 - Silicon containing compounds for ald deposition of metal silicate films: Disclosed are silicon containing compounds and their use in vapor deposition methods of hafnium silicate films having a desired silicon concentration. More particularly, deposition of hafnium silicate films by atomic layer deposition using moisture and the disclosed silicon containing compounds produce films having a desired silicon concentration.... Agent:

20140322925 - Method of laser annealing process: The present disclosure discloses a method of laser annealing process, wherein the surface of the semiconductor structure on a substrate is scanned by a laser annealing device, and the said laser annealing device comprises a laser source and the optical instruments. The invention comprises the following steps: generating a laser... Agent: Everdisplay Optronics (shanghai) Limited

20140322926 - Method of manufacturing semiconductor device: Provided is a method of manufacturing a semiconductor device using a heating device capable of suppressing shearing of a holder due to thermal deformation of the heating element included in the heating device. The method includes: loading a substrate into a process chamber surrounded by a heating device including a... Agent:

20140322927 - Drawing apparatus and method of manufacturing article: A drawing apparatus includes: plural charged particle optical systems arrayed at a pitch in a first direction, each configured to irradiate a substrate with charged particle beams; a stage configured to hold the substrate and be moved relative to the charged particle optical systems in a second direction orthogonal to... Agent: Canon Kabushiki Kaisha

  
10/23/2014 > 65 patent applications in 54 patent subcategories.

20140315329 - Method of manufacturing a magnetoresistive-based device: A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first... Agent: Everspin Technologies, Inc.

20140315330 - Measurement device, measurement method, and method for manufacturing semiconductor device: There is provided a measuring apparatus including: an illuminator configured to illuminate, with an illumination light, a substrate having a pattern formed by exposure on a surface; a detector configured to detect the illumination light modulated by the pattern to output a detection signal; and a measuring unit configured to... Agent:

20140315331 - Screening of surface passivation processes for germanium channels: Candidate wet processes for native oxide removal from, and passivation of, germanium surfaces can be screened by high-productivity combinatorial variation of different process parameters on different site-isolated regions of a single substrate. Variable process parameters include the choice of hydrohalic acid used to remove the native oxide, the concentration of... Agent: Intermolecular, Inc.

20140315332 - System and method for increasing productivity of combinatorial screening: The present invention provides systems and methods for simultaneous, parallel and/or rapid serial testing of material parameters or other parameters of the result of a process. The testing is typically used for screening different methods or materials to select those methods or materials with desired properties. A reactor structure used... Agent:

20140315333 - Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer: Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent... Agent: Precitec Optronik Gmbh

20140315334 - Integrated circuit package including embedded thin-film battery: An integrated circuit package is provided with a thin-film battery electrically connected to and encapsulated with an integrated circuit die. The battery can be fabricated on a dedicated substrate, on the die pad, or on the integrated circuit die itself.... Agent:

20140315335 - Method of processing substrate: A method of processing a substrate includes forming holes in bottom portions of a plurality of recesses formed in a substrate to be arranged in an array direction at a predetermined pitch by performing reactive ion etching on the bottom portions of the plurality of recesses. The forming holes in... Agent: Canon Kabushiki Kaisha

20140315336 - Apparatus for forming organic light emitting layer and method of forming organic light emitting layer using the same: An organic light-emitting layer forming apparatus includes a stage supporting an intermediate product of an organic light emitting device, which includes a substrate, and a pixel defining layer including first openings. The apparatus includes a first mask disposed over the stage and including second openings, and a second mask disposed... Agent: Samsung Display Co., Ltd.

20140315337 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the... Agent:

20140315338 - Light-emitting device and method for manufacturing same: Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and... Agent:

20140315339 - Method of manufacturing organic light emitting display: A manufacturing method of an organic light emitting display includes preparing a substrate including a cathode line, forming an anode electrode on the substrate, the anode electrode being insulated from the cathode line, forming an insulating layer having a first opening exposing a portion of the cathode line and a... Agent: Samsung Display Co., Ltd.

20140315340 - Laser diodes with scribe structures: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.... Agent: Soraa Laser Diode, Inc.

20140315343 - Apparatus for depositing organic film on substrate: A thin film deposition apparatus includes: a process chamber; and a substrate support comprising a substantially flat surface configured to support a substrate in the process chamber; and a deposition source configured to supply an organic material for deposition onto the substrate. The apparatus further includes a deposition mask assembly... Agent: Samsung Display Co., Ltd.

20140315342 - Deposition apparatus, deposition method, organic el display, and lighting device: A deposition method includes moving a substrate in a first direction within a processing chamber; generating a first source gas by evaporating a first film forming source material; discharging the first source gas from a first discharge opening toward the substrate being moved in the processing chamber; forming a first... Agent: Tokyo Electron Limited

20140315344 - Deposition apparatus, organic light emitting display apparatus, and method of manufacturing organic light emitting display apparatus using the deposition apparatus: A deposition apparatus includes a deposition unit including a plurality of deposition assemblies, which are separated from a substrate at a predetermined distance and deposit a material onto the substrate while a first transfer unit transfers the substrate. Each of the plurality of deposition assemblies includes a patterning slit sheet... Agent: Samsung Display Co., Ltd.

20140315341 - Method of forming organic layer and method of manufacturing organic light emitting device having the same: A method of forming an organic layer includes supplying a liquefied organic material, drying the liquefied organic material, supplying a solvent to an intermediate organic layer to swell the intermediate organic layer, and drying the swelled organic layer. The organic layer is formed to have a uniform thickness when the... Agent:

20140315345 - Methods for thick films thermoelectric device fabrication: Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible... Agent: Berken Solar LLC

20140315346 - Interface between a i/iii/vi2 layer and a back contact layer in a photovoltaic cell: The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer. In the method of the invention, the metal deposition comprises a step during which an additional element is added to the... Agent: Nexcis

20140315347 - Scalable multi-role surface-wave plasma generator: Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free... Agent: Starfire Industries, LLC

20140315348 - Thin film solar cell: A thin-film solar cell which uses an InS-based buffer layer is produced by forming a metal back electrode layer on a substrate, forming a p-type light absorption layer on the metal back electrode layer, oxidizing the p-type light absorption layer surface, forming an InS-based buffer layer as an n-type high... Agent:

20140315349 - Semiconductor device and method for manufacturing the same: A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of... Agent:

20140315350 - Wafer process for molded chip scale package (mcsp) with thick backside metallization: A wafer process for MCSP comprises: depositing a metal bump on bonding pads of chips; forming a first packaging layer at front surface of wafer covering metal bumps while forming an un-covered ring at the edge of wafer to expose the ends of each scribe line located between two adjacent... Agent:

20140315351 - Fabrication method of semiconductor package without chip carrier: A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the... Agent:

20140315353 - Fabrication method of packaging substrate, and fabrication method of semiconductor package: A fabrication method of a packaging substrate includes: providing a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality of first openings for defining a first core circuit layer therebetween, the second surface has a plurality of... Agent:

20140315352 - Semiconductor device fabricating method: A semiconductor device fabricating method includes forming device chip regions and a monitor chip region for processing management, on a substrate surface layer on one main surface side of a semiconductor substrate wafer, each device chip region having an active region and an edge region; after forming metal films on... Agent: Fuji Electric Co., Ltd.

20140315354 - Package process: A package structure and a package process are provided. The package structure comprises a carrier having a carrying portion and a plurality of supporting bar remnants disposed around and extending outward from the carrying portion, a chip mounted to the carrying portion, and an encapsulant disposed on the carrier and... Agent:

20140315355 - Manufacturing method of wafer level package: The present invention provides a method for manufacturing a semiconductor package structure, including (i) providing a carrier plate; (ii) disposing a die on the carrier plate; (iii) forming a plurality of bonding wires having a first end and a second end; (iv) forming an encapsulant covering the die and the... Agent:

20140315356 - Semiconductor device and method for manufacturing the same: In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of... Agent:

20140315357 - Method of manufacturing an ltps array substrate: The present disclosure discloses a method of manufacturing the LTPS array substrate, comprising: depositing a polysilicon layer and an amorphous silicon layer on the substrate successively and crystallizing the amorphous silicon layer to form the polysilicon layer by laser annealing; coating a photoresist layer covering the PMOS area, NMOS area... Agent: Everdisplay Optronics (shanghai) Limited

20140315358 - Manufacturing method of junction field effect transistor: The present invention discloses a manufacturing method of a junction field effect transistor (JFET). The manufacturing method includes: providing a substrate with a first conductive type, forming a channel region with a second conductive type, forming a field region with the first conductive type, forming a gate with the first... Agent: Richtek Technology Corporation

20140315359 - Semiconductor device manufacturing method: A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region... Agent: Rohm Co., Ltd.

20140315360 - Method of scavenging impurities in forming a gate stack having an interfacial layer: A multi-layer scavenging metal gate stack, and methods of manufacturing the same, are disclosed. In an example, a gate stack disposed over a semiconductor substrate includes an interfacial dielectric layer disposed over the semiconductor substrate, a high-k dielectric layer disposed over the interfacial dielectric layer, a first conductive layer disposed... Agent:

20140315361 - Replacement metal gate process for cmos integrated circuits: A complementary metal-oxide-semiconductor (CMOS) integrated circuit structure, and method of fabricating the same according to a replacement metal gate process. P-channel and n-channel MOS transistors are formed with high-k gate dielectric material that differ from one another in composition or thickness, and with interface dielectric material that differ from one... Agent:

20140315362 - Cmos transistor with dual high-k gate dielectric: A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a first region and a second region. A first gate dielectric material is deposited over the second region. A first gate material is deposited over... Agent: Infineon Technologies Ag

20140315363 - 6t sram architecture for gate-all-around nanowire devices: A memory device includes a first plurality of semiconductor nanowires tethered between landing pads and suspended over a substrate. A first gate electrode surrounds each of the first plurality of semiconductor nanowires, making them gate-all-around, (GAA) semiconductor nanowires. First, second, and third field effect transistors (FETs) are formed by the... Agent: International Business Machines Corporation

20140315364 - Methods of forming a vertical transistor: Trenches are formed into semiconductive material. Masking material is formed laterally over at least elevationally inner sidewall portions of the trenches. Conductivity modifying impurity is implanted through bases of the trenches into semiconductive material there-below. Such impurity is diffused into the masking material received laterally over the elevationally inner sidewall... Agent:

20140315365 - Method of forming semiconductor device: A method of forming a semiconductor device is provided. At least one gate structure including a dummy gate is formed on a substrate. A contact etch stop layer and a dielectric layer are formed to cover the gate structure. A portion of the contact etch stop layer and a portion... Agent: United Microelectronics Corp.

20140315366 - Semiconductor device and method of making: The present disclosure is related to semiconductor technologies and discloses a semiconductor device and its method of making. In the present disclosure, a transistor's source and drain are led out by concurrently formed metal-semiconductor compound contact regions at the source and drain and metal-semiconductor compounds in vias formed at positions... Agent: Fudan University

20140315368 - Process for forming a capacitor structure with rutile titanium oxide dielectric film: A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiO2 layer on the first electrode. Subsequently, the transitional amorphous TiO2 layer is treated by oxygen plasma to... Agent:

20140315367 - Rinse liquid for insulating film and method of rinsing insulating film: A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:... Agent:

20140315369 - Resistive random access memory cells having metal alloy current limiting layers: Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may... Agent:

20140315370 - Full wafer processing by multiple passes through a combinatorial reactor: Overlapping combinatorial processing can offer more processed regions, better particle performance and simpler process equipment. In overlapping combinatorial processing, one or more regions are processed in series with some degrees of overlapping between regions. In some embodiments, overlapping combinatorial processing can be used in conjunction with non-overlapping combinatorial processing and... Agent:

20140315371 - Methods of forming isolation regions for bulk finfet semiconductor devices: One method disclosed herein includes forming a plurality of fin-formation trenches in a semiconductor substrate that define a plurality of spaced-apart fins, forming a patterned liner layer that covers a portion of the substrate positioned between the fins while exposing portions of the substrate positioned laterally outside of the patterned... Agent: Globalfoundries Inc.

20140315372 - Wafer processing method: A wafer processing method including a wafer supporting step of attaching a front side of a dicing tape formed of synthetic resin to a back side of a wafer and supporting a peripheral portion of the dicing tape to an annular frame, a dicing tape heating step of heating a... Agent: Disco Corporation

20140315373 - Method for manufacturing silicon carbide substrate: A method for manufacturing a silicon carbide substrate 10 has the following steps. A silicon carbide single crystal substrate 1 having a first main surface 1a and a second main surface 1b opposite to the first main surface 1a is prepared. The first main surface 1a is subjected to chemical... Agent: Sumitomo Electric Industries, Ltd.

20140315374 - Selective epitaxial growth of semiconductor materials with reduced defects: A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls. The semiconductor region is... Agent:

20140315375 - Substrate processing apparatus including exhaust ports and substrate processing method: Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the... Agent: Eugene Technology Co., Ltd.

20140315376 - System and methods of embedding material in a glass substrate: A method for embedding a dopant into a glass substrate is provided. The method may include the steps of applying the dopant to a surface of the glass substrate, positioning the glass substrate adjacent to a catalyst such that the dopant is intermediate the catalyst and the glass substrate, heating... Agent: Lighting Science Group Corporation

20140315377 - Work function adjustment with the implant of lanthanides: Semiconductor devices and fabrication methods are provided, in which fully silicided gates are provided. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work... Agent:

20140315378 - Nonvolatile semiconductor memory device and method of manufacturing: A nonvolatile semiconductor memory device includes a first insulating layer on a semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The charge storage layer includes a floating gate... Agent:

20140315379 - Contact structure employing a self-aligned gate cap: After formation of a replacement gate structure, a template dielectric layer employed to pattern the replacement gate structure is removed. After deposition of a dielectric liner, a first dielectric material layer is deposited by an anisotropic deposition and an isotropic etchback. A second dielectric material layer is deposited and planarized... Agent: International Business Machines Corporation

20140315381 - Interconnect fabrication at an integrated semiconductor processing station: A stand-alone processing station of a semiconductor manufacturing system may be configured to fabricate interconnects on a semiconductor wafer. The stand-alone processing station may include a chemical mechanical polishing (CMP) module and an electro-chemical deposition (ECD) module. The CMP module may be configured to receive a semiconductor wafer from another... Agent:

20140315380 - Trench patterning with block first sidewall image transfer: A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming... Agent:

20140315382 - Interconnection wires of semiconductor devices: A method of forming a semiconductor device includes forming a plurality of substantially equal-spaced first spacers having a first pitch over a substrate and forming first metal interconnecting wires utilizing the first spacers. The method also includes forming a plurality of substantially equal-spaced second spacers in such a way to... Agent:

20140315383 - Methods of making integrated circuits: A method of making an integrated circuit including forming a seal ring structure around a circuit where the seal ring structure has a first portion and a tilted portion. The first portion of the seal ring structure is substantially parallel with an edge of the circuit. The tilted portion of... Agent:

20140315384 - Method of processing a device substrate: Methods of processing a device substrate are disclosed herein. In one embodiment, a method of processing a device substrate can include bonding a first surface of a device substrate to a carrier with a polymeric material. The device substrate may have a plurality of first openings extending from the first... Agent: Invensas Corporation

20140315385 - Method of forming a dielectric film: A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The... Agent: Global Foundries Inc.

20140315386 - Metal compound coated colloidal particles process for making and use therefor: Solid metal compound coated colloidal particles are made through a process by coating metal compounds onto colloidal particle surfaces. More specifically, metal compound precursors react with the base solution to form solid metal compounds. The solid metal compounds are deposited onto the colloidal particle surfaces through bonding. Excess ions are... Agent: Air Products And Chemicals, Inc.

20140315388 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes forming a second insulating layer over a first insulating layer, forming a mask over the second insulating layer, after the forming the mask, a first etching of the second insulating layer which is not covered by the mask, and after the first... Agent:

20140315389 - Crack control for substrate separation: A method for separating a layer for transfer includes forming a crack guiding layer on a substrate and forming a device layer on the crack-guiding layer. The crack guiding layer is weakened by exposing the crack-guiding layer to a gas which reduces adherence at interfaces adjacent to the crack guiding... Agent: International Business Machines Corporation

20140315390 - Grapho-epitaxy dsa process with dimension control of template pattern: A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than... Agent: International Business Machines Corporation

20140315391 - Method of manufacturing a semiconductor device including a stress relief layer: A method of manufacturing a semiconductor device includes providing a layered structure having a hard dielectric layer containing a first dielectric material having a Young's modulus greater than 10 GPa in a central portion of a main surface of a main body comprising a single crystalline semiconductor body, and providing... Agent:

20140315392 - Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof: A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on... Agent: Lam Research Corporation

20140315393 - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium: A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle... Agent: Hitachi Kokusai Electric Inc.

20140315394 - Process for smoothing a surface via heat treatment: The process for smoothing a rough surface of a first substrate made of a semiconductor alloy based on at least two elements chosen from Ga, As, Al, In, P and N is implemented by placing a second substrate facing the first substrate so that the rough surface is placed facing... Agent: Commissariat &#xc1 L'energie Atomique Et Aux Energies Alternatives

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