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Semiconductor device manufacturing: process May archived by USPTO category 05/12

20120135543 - Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same: A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of... Agent: Samsung Electronics Co., Ltd.

20120135544 - Method of fabricating semiconductor device and apparatus for fabricating the same: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference... Agent:

20120135545 - Laser apparatus and method for manufacturing a solar cell module using the same: A method for manufacturing a solar cell module includes forming a first electrode on a first surface of a substrate; forming a semiconductor layer on the first electrode; forming a second electrode on the semiconductor layer; inverting the substrate with the first electrode, semiconductor layer and second electrode formed thereon,... Agent: Samsung Sdi Co., Ltd.

20120135546 - Alignment inspection: The present disclosure relates to the field of microelectronic substrate fabrication and, more particularly, to alignment inspection for vias formed in the microelectronic substrates. The alignment inspection may be achieved by determining the relative positions of fluorescing and non-fluorescing elements in a microelectronic substrate.... Agent:

20120135547 - Fabricating method and testing method of semiconductor device and mechanical integrity testing apparatus: A fabricating method and a testing method of a semiconductor device and a mechanical integrity testing apparatus are provided. An object includes a wafer, an insulating layer, and a plurality of conductive posts is provided. A surface of the wafer has a plurality of first blind holes outside chip regions... Agent: Industrial Technology Research Institute

20120135548 - Semiconductor device: A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and... Agent: Hitachi, Ltd.

20120135549 - Method of processing gallium-nitride semiconductor substrates: Polishing a nitride semiconductor monocrystalline wafer leaves it with a process-transformed layer. The process-transformed layer has to be etched to be removed. The chemical inertness of nitride semiconductor materials has, however, precluded suitable etching. Although potassium hydroxide, for example, or sulfuric acid have been proposed as GaN etchants, their ability... Agent: Sumitomo Electric Industries, Ltd.

20120135550 - Refraction assisted illumination for imaging: Various embodiments are directed to systems and methods of imaging subsurface features of objects. An illumination source may be directed towards a surface of an object comprising subsurface features at a first angle relative to the normal of the surface. The object may have a portion between the subsurface features... Agent: The Aerospace Corporation

20120135551 - Light emitting diode and method of fabricating the same: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an... Agent: Seoul Opto Device Co., Ltd.

20120135552 - Array substrate for in-plane switching mode liquid crystal display device including pixel and common electrodes on the same layer and method of manufacturing the same: An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line along a first direction on the substrate, a data line along a second direction and crossing the gate line to define a pixel region, a common line on the substrate, a thin... Agent: Lg Display Co., Ltd.

20120135554 - Group-iii nitride semiconductor laser device, and method of fabricating group-iii nitride semiconductor laser device: A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate... Agent: Sumitomo Electric Industries, Ltd.

20120135553 - Method for manufacture of bright gan leds using a selective removal process: A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.... Agent: Soraa, Inc.

20120135555 - Method for manufacturing thin film transistor array panel: A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming... Agent: Samsung Electronics Co., Ltd.

20120135556 - Methods for manufacturing organic el display panel and organic el display device: Provided is an organic EL display panel offering improved luminance without increasing the current density of current flowing through organic light-emitting layers, comprising: substrate; TFT layer formed on substrate; planarizing film formed above TFT layer and having contact holes; lower electrodes arranged above planarizing film in a matrix in one-to-one... Agent: Panasonic Corporation

20120135557 - Group iii nitride semiconductor light-emitting device: A method for producing a Group III nitride semiconductor light-emitting device includes forming a first stripe-pattern embossment on the top surface of a sapphire substrate, so that first grooves parallel to the x-axis direction (the c-axis direction of the sapphire substrate) are periodically arranged at specific intervals. Subsequently, an insulating... Agent: Toyoda Gosei Co., Ltd.

20120135558 - Method of etching asymmetric wafer, solar cell including the asymmetrically etched wafer, and method of manufacturing the same: With the present invention, two wafers for a solar cell only whose light receiving surfaces are selectively etched can be simultaneously obtained by overlapping the two wafers and performing a single-sided etching or an asymmetric etching thereon. The present invention provides a method of etching a wafer comprising: performing a... Agent:

20120135559 - Solid-state imaging device and method for manufacturing the same: A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and... Agent: Sony Corporation

20120135560 - Methods of packaging imager devices and optics modules, and resulting assemblies: A method of packaging imager devices and optics modules is disclosed which includes positioning an imager device and an optics module in each of a plurality of openings in a carrier body, introducing an encapsulant material into each of the openings in the carrier body and cutting the carrier body... Agent: Micron Technology, Inc.

20120135561 - Photoelectric-conversion-device fabrication method: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline... Agent: Mitsubishi Heavy Industries, Ltd.

20120135562 - Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor: A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature... Agent: National Taiwan University Of Science And Technology

20120135563 - Process for producing multilayer chip zinc oxide varistor containing pure silver internal electrodes and firing at ultralow temperature: m

20120135564 - Soft error rate mitigation by interconnect structure: A method creates a structure that comprises a carrier connected to an integrated circuit chip by pillars and openings. Thus, in this structure, at least one conductive pillar extends a distance or height from the surface of the integrated circuit chip and a barrier surrounds the lower portion of the... Agent: International Business Machines Corporation

20120135565 - Method of manufacturing semiconductor device including filling gap between substrates with mold resin: A method of manufacturing a semiconductor device in one exemplary embodiment includes preparing a first substrate and a second substrate, the first substrate including a bump electrode group formed of bump electrodes arrayed with a certain pitch, the number of bump electrodes along a first direction being larger than the... Agent: Elpida Memory, Inc.

20120135566 - Monolithic integration of photonics and electronics in cmos processes: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices with at least a portion of each of the wafers bonded together,... Agent:

20120135567 - Methods and apparatuses for transferring heat from stacked microfeature devices: Methods and apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support member having terminals and a first microelectronic die having first external contacts carried by the support member. The first external contacts are operatively coupled to the terminals... Agent: Micron Technology, Inc.

20120135568 - Semiconductor device and manufacturing method of a semiconductor device: A semiconductor device of the present invention comprises a substrate and a first semiconductor element. The substrate comprises an inner layer conductor and a cavity comprising the bottom surface on which a part of the inner layer conductor is exposed. The first semiconductor element contacts, in the cavity, the inner... Agent:

20120135569 - Stacked microelectronic dies and methods for stacking microelectronic dies: An assembly of microelectronic devices and method for forming an assembly of microelectronic devices. In one embodiment, the method includes positioning a first packaged microelectronic device adjacent to a support member having support member circuitry, with the first packaged microelectronic device having a first microelectronic die at least partially encased... Agent: Micron Technology, Inc.

20120135570 - Lifting-off method and method for manufacturing tft array substrate: A lifting-off method and a manufacturing method for a thin film transistor (TFT) array substrate using the same are provided. A lifting-off method comprises forming a cavitation jet flow by using a lifting-off solution, and impacting a to-be-lifted-off surface of a substrate by means of the cavitation jet flow to... Agent: Boe Technology Group Co., Ltd.

20120135571 - Manufacturing method of a thin film transistor: A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed... Agent: Chunghwa Picture Tubes, Ltd.

20120135572 - Semiconductor device manufacturing method: A gate electrode is formed on a surface of a semiconductor substrate. A resist mask is formed that covers both end faces of the gate electrode in a gate width direction intersecting a gate length direction. Impurity ions are implanted into the semiconductor substrate in an implantation direction having a... Agent: Lapis Semiconductor Co., Ltd.

20120135573 - Method for manufacturing vertical transistor having one side contact: A method for manufacturing a vertical transistor having a one side contact includes: forming separate active regions using trenches, on a semiconductor substrate, the active regions having first and second side surfaces facing the trenches; forming a first liner on the first and second side surfaces; forming a second liner... Agent: Hynix Semiconductor Inc.

20120135574 - Semiconductor device and method of manufacturing the same: Aimed at providing a highly reliable semiconductor device appropriately increased in stress at the channel region so as to improve carrier injection rate, thereby dramatically improved in transistor characteristics, and made adaptable also to recent narrower channel width, and a method of manufacturing the same, and a method of manufacturing... Agent: Fujitsu Semiconductor Limited

20120135575 - Methods of forming integrated circuits: A method of forming an integrated circuit includes forming a gate structure over a substrate. Portions of the substrate are removed to form recesses adjacent to the gate structure. A dopant-rich layer having first type dopants is formed on a sidewall and a bottom of each of the recesses. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120135576 - Method of fabricating semiconductor device: Provided are a semiconductor device and a method of fabricating a semiconductor device. The method includes providing a substrate having a channel region; forming a gate structure, which comprises a dummy gate pattern, on the substrate; forming first and second trenches by recessing the substrate on both sides of the... Agent:

20120135577 - Method of manufacturing semiconductor devices: A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough being formed on a substrate. The second sacrificial layer is removed. A second etch stop layer and an insulating interlayer... Agent: Samsung Electronics Co., Ltd.

20120135578 - Doping of planar or three-dimensional structures at elevated temperatures: An improved method of doping a workpiece is disclosed. In this method, a film comprising the species to be implanted is introduced to the surface of a planar or three-dimensional workpiece. This film can be grown using CVD, a bath or other means. The workpiece with the film is then... Agent: Varian Semiconductor Equipment Associates, Inc.

20120135579 - Method of fabricating semiconductor device: A method uses a line pattern to form a semiconductor device including asymmetrical contact arrays. The method includes forming a plurality of parallel first conductive line layers extending in a first direction on a semiconductor substrate. In this method, the semiconductor substrate may have active regions forming an oblique angle... Agent: Samsung Electronics Co., Ltd.

20120135580 - Three-dimensional memory structures having shared pillar memory cells: A three-dimensional non-volatile memory system is disclosed including a memory array utilizing shared pillar structures for memory cell formation. A shared pillar structure includes two non-volatile storage elements. A first end surface of each pillar contacts one array line from a first set of array lines and a second end... Agent:

20120135581 - Memory devices and methods of forming the same: Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a... Agent: Micron Technology, Inc.

20120135582 - Semiconductor device and method for manufacturing the same: Semiconductor device manufacturing method includes forming a first mask, having a first opening to implant ion into semiconductor substrate and being used to form first layer well, on semiconductor substrate; forming first-layer well having first and second regions by implanting first ion into semiconductor substrate using first mask; forming second... Agent: Elpida Memory, Inc.

20120135583 - Methods of manufacturing three dimensional semiconductor memory devices using sub-plates: A method of manufacturing a Three Dimensional (3D) semiconductor memory device can be provided by forming at least one trench in a plate stack structure to divide the plate stack structure into a plurality of sub-plate stack structures between forming a plurality of vertical active patterns in the plate stack... Agent: Samsung Electronics Co., Ltd.

20120135584 - Method for manufacturing soi wafer: A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the... Agent: Shin-etsu Handotai Co., Ltd.

20120135585 - Method for manufacturing chip: A method for manufacturing a chip constituted by a functional device formed on a substrate comprises a functional device forming step of forming the functional device on one main face of a sheet-like object to be processed made of silicon; a first modified region forming step of converging a laser... Agent: Hamamatsu Photonics K.k.

20120135586 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns,... Agent: Hynix Semiconductor Inc.

20120135587 - N-type carrier enhancement in semiconductors: A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a... Agent: International Business Machines Corporation

20120135589 - Chemical-mechanical planarization method and method for fabricating metal gate in gate-last process: The present invention provides a chemical-mechanical planarization method and a method for fabricating a metal gate in gate last process. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an... Agent:

20120135588 - Method for patterning a metal layer and method for manufacturing semiconductor devices by using the same: Disclosed herein is a method for patterning a metal layer, which includes the following steps. A substrate having a metal layer thereon is provided. A patterned conductive polymeric layer is formed on the metal layer, wherein a portion of the metal layer is exposed by the patterned conductive polymeric layer.... Agent: E Ink Holdings Inc.

20120135591 - Semiconductor devices having tensile and/or compressive stress and methods of manufacturing: Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. A method of forming a semiconductor structure includes forming sidewalls and spacers adjacent to a gate stack structure, and forming a recess in the gate stack structure. The method further includes epitaxially growing... Agent: International Business Machines Corporation

20120135590 - Silicon removal from surfaces and method of forming high k metal gate structures using same: A method of fabricating a semiconductor device, comprising carrying out a gate last process including forming a dummy gate of polysilicon, and thereafter removing the dummy gate for replacement by a metal gate, wherein the dummy gate is removed by XeF2 etch removal.... Agent: Advanced Technology Materials, Inc.

20120135592 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is disclosed, which reduces a step difference between a peripheral region and a cell region. In the semiconductor device, a metal contact of the peripheral region is configured in a multi-layered structure. Prior to forming a bit line and a storage node contact... Agent: Hynix Semiconductor Inc.

20120135593 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided... Agent: Kabushiki Kaisha Toshiba

20120135594 - Method for forming a gate electrode: A method for forming a gate electrode includes: providing a substrate; forming a gate dielectric layer and forming a sacrificial layer, the sacrificial layer including doping ions, a density of the doping ions in the sacrificial layer decreasing with increasing distance from the substrate; forming a hard mask layer; patterning... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120135595 - Non-volatile semiconductor storage device and method of manufacturing the same: A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar... Agent: Kabushiki Kaisha Toshiba

20120135596 - Method of removing nanocrystals: A method for forming a semiconductor structure includes providing a semiconductor layer, forming nanocrystals over the semiconductor layer, and using a solution comprising pure water, hydrogen peroxide, and ammonium hydroxide to remove at least a portion of the nanocrystals. A ratio by volume of pure water to ammonium hydroxide of... Agent:

20120135597 - Method of forming tio2 array using zno template: Provided is a method of forming a method of forming a titanium dioxide (TiO2) array using a zinc oxide (ZnO) template. In the method, polymer nanopatterns are formed on the substrate, and monomolecular monolayers are formed between the polymer nanopatterns on the substrate. A seed layer pattern is formed between... Agent: Electronics And Telecommunications Research Institute

20120135598 - Method for fabricating interconnections with carbon nanotubes: A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper... Agent:

20120135599 - Circuit structures and methods with beol layers configured to block electromagnetic edge interference: Back-end-of-line (BEOL) circuit structures and methods are provided for blocking externally-originating or internally-originating electromagnetic edge interference. One such BEOL circuit structure includes a semiconductor substrate supporting one or more integrated circuits, and multiple BEOL layers disposed over the semiconductor substrate. The multiple BEOL layers extend to an edge of the... Agent: International Business Machines Corporation

20120135600 - Method for metal correlated via split for double patterning: The embodiments of via mask splitting methods for double patterning technology described enable via patterning to align to a metal layer underneath or overlying to reduce overlay error and to increase via landing. If adjacent vias violate the G0-mask-split-rule for space or pitch (or both) between vias, the mask assignment... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120135601 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device including a plurality of hole patterns is disclosed. The method includes: forming a plurality of first line patterns and a plurality of first space patterns extending in a first direction; forming a plurality of second line patterns and a plurality of second space... Agent:

20120135602 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region,... Agent: Hamamatsu Photonics K.k.

20120135603 - Methods for increased array feature density: The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or... Agent:

20120135604 - Processing liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same: There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure,... Agent: Mitsubishi Gas Chemical Company, Inc.

20120135605 - Method for forming side-contact region in semiconductor device: A method for fabricating a semiconductor device includes forming a first trench by etching a substrate, forming a liner layer on a surface of the first trench, forming a sacrificial spacer pattern covering one sidewall of the first trench over the liner layer, forming a second trench by etching the... Agent:

20120135606 - Laser processing method: A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of... Agent: Hamamatsu Photonics K.k.

20120135607 - Substrate processing method: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within... Agent: Hamamatsu Photonics K.k.

20120135608 - Substrate processing method: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within... Agent: Hamamatsu Photonics K.k.

20120135609 - Apparatus and process for atomic layer deposition: Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front... Agent: Applied Materials, Inc.

20120135612 - Film forming method, pretreatment device, and processing system: A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of... Agent: Tokyo Electron Limited

20120135611 - Method of manufacturing porous insulating film: A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma, and converting the insulating film to a... Agent: Renesas Electronics Corporation

20120135610 - System and method for processing substrate: A substrate processing system including a cleaning equipment; a resist coating equipment forming a resist layer on a surface of a substrate; an edge exposure equipment that exposes to light an edge portion of the resist layer formed on a peripheral edge of the substrate; a substrate transport mechanism; and... Agent: Lapis Semiconductor Co., Ltd.

20120129273 - Photolithographically defined contacts to carbon nanostructures: Methods for the fabrication of nanostructures, including nanostructures comprised of carbon nanotubes, and the nanostructures, devices, and assemblies prepared by these methods, are described.... Agent: The Trustees Of The University Of Pennsylvania

20120129274 - Photodiode self-test: A photodetector array includes a plurality of photodetector cells such as avalanche photodiodes and readout circuits. An array self-tester tests a dark count or other performance characteristic of the cells. The test is performed in connection with the manufacture of the array or following the installation of the array in... Agent: Koninklijke Philips Electronics N.v.

20120129275 - Dual-bulb lamphead control methodology: The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based... Agent: Applied Materials, Inc.

20120129276 - 4d process and structure: A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tongue and groove device at the memory wafer... Agent: International Business Machines Corporation

20120129277 - Methods and apparatuses for determining thickness of a conductive layer: Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an... Agent: Novellus Systems, Inc.

20120129278 - Dry etching method: A dry etching method includes a first step and a second step. The first step includes generating a first plasma from a gas mixture, which includes an oxidation gas and a fluorine containing gas, and performing anisotropic etching with the first plasma on a silicon layer to form a recess... Agent: Ulvac, Inc.

20120129279 - Imprinting method, imprinting apparatus and medium: According to one embodiment, there is provided an imprinting method for applying a first hardening resin material on a substrate to be processed and transferring a pattern of a semiconductor integrated circuit formed on a template onto the substrate to be processed on which the first hardening resin material is... Agent:

20120129280 - Method of manufacturing light emitting device: A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120129281 - Resin dispensing apparatus for light emitting device package and method of manufacturing light emitting device package using the same: There is provided a resin dispensing apparatus for a light emitting device package and a method of manufacturing a light emitting device package using the same. The resin dispensing apparatus includes a resin dispensing part including a resin storage portion filled with a resin therein and a resin discharge portion... Agent:

20120129282 - Wafer level conformal coating for led devices: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120129283 - Light emitting device and method for enhancing light extraction thereof: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and... Agent: Walsin Lihwa Corporation

20120129284 - Method for manufacturing liquid crystal display pixel array: This invention discloses a method for manufacturing liquid crystal display pixel array, which is capable of promoting an aperture ratio. The method of this invention includes forming a gate metal layer on a glass substrate; forming a gate insulation layer; forming a semiconductor layer; forming a second metal layer on... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20120129285 - Methods for manufacturing display panel and display apparatus: The present invention provides methods for manufacturing a display panel and a display apparatus. The method comprises the following steps: sputtering alignment layers on substrates; forming a liquid crystal layer between the alignment layers to form a liquid crystal cell; applying a voltage to the liquid crystal cell; irradiating an... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20120129286 - Pixel structure of display and method for manufacturing the same: A pixel structure of a display including a first substrate, a second substrate, and a liquid crystal (LC) layer disposed therebetween. The pixel structure comprises a plurality of first, second, and third sub-pixels; a plurality of alignment controlling patterns, respectively formed in the first, second and third sub-pixels for controlling... Agent: Au Optronics Corp.

20120129288 - Display device and manufacturing method of the same: A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120129287 - Display device and method for manufacturing the same: According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120129289 - Nitride semiconductor light emitting device and method of manufacturing the same: A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on... Agent: Samsung Led Co., Ltd.

20120129290 - Method for forming semiconductor nano-micro rods and applications thereof: An embodiment of this invention utilizes ZnO rods as the etching mask to etch a GaN layer arranged below, so that GaN rods are formed. The GaN rods have similar patterns as the ZnO rods. The pattern, size, position, and height of the GaN rods are respectively controlled by the... Agent: National Taiwan University

20120129291 - Method for producing a micromechanical component: A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material.... Agent:

20120129292 - Laminating assembly: A carrier assembly for temporary accommodation of one or more solar cell laminates while the solar laminates are conveyed through a lamination plant. The solar cell laminate comprises a solar cell layer of silicon material, an upper and a lower encapsulating layer of EVA material covering the top and bottom... Agent: Saphire Solar Technologies Aps

20120129293 - Methods of making an unsupported article of a semiconducting material using thermally active molds: The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, Tsurface, and a core temperature, Tcore, whererin Tsurface>Tcore.... Agent:

20120129294 - Fast photoconductor: A photoconductor comprising a layer stack with a semiconductor layer photoconductive for a predetermined wavelength range between two semiconductor boundary layers with a larger band gap than the photoconductive semiconductor layer on a substrate, wherein the semiconductor boundary layers comprise deep impurities for trapping and recombining free charge carriers from... Agent:

20120129295 - Method of manufacturing photoelectric conversion device: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including... Agent: Samsung Electronics Co., Ltd.

20120129296 - Method for forming an organic material layer on a substrate: A method for forming an organic material layer on a substrate in an in-line deposition system is disclosed. In one aspect, the organic material is deposited with a predetermined non-constant deposition rate profile, which includes a first predetermined deposition rate range provided to deposit at least a first monolayer of... Agent: Nederlandse Organisatie Voor Toegepast-natuurwe Tenschappelijk Onderzoek (tno)

20120129297 - Method of manufacturing wafer level package: A method of manufacturing a wafer level package including: separating chips by dicing a wafer; forming a removable resin layer in a space between the separated chips and at upper parts thereof; separating the chips by dicing the removable resin layer; mounting the chips separated in a state of being... Agent: Samsung Electro-mechanics Co., Ltd.

20120129298 - Method of making stackable semiconductor assembly with bump/flange heat spreader and dual build-up circuitry: A method of making a stackable semiconductor assembly that includes a semiconductor device, a heat spreader, an adhesive, a plated through-hole, first build-up circuitry and second build-up circuitry is disclosed. The heat spreader includes a bump and a flange. The bump defines a cavity. The semiconductor device is mounted on... Agent: Bridge Semiconductor Corporation

20120129299 - Method of making thermally enhanced semiconductor assembly with bump/base/flange heat spreader and build-up circuitry: A method of making a semiconductor assembly that includes a semiconductor device, a heat spreader, an adhesive and a build-up circuitry is disclosed. The heat spreader includes a bump, a base and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity,... Agent: Bridge Semiconductor Corporation

20120129300 - Method of making stackable semiconductor assembly with bump/base/flange heat spreader and build-up circuitry: A method of making a stackable semiconductor assembly that includes a semiconductor device, a heat spreader, an adhesive, a terminal, a plated through-hole and build-up circuitry is disclosed. The heat spreader includes a bump, a base and a flange. The bump defines a cavity. The semiconductor device is mounted on... Agent: Bridge Semiconductor Corporation

20120129301 - System comprising a semiconductor device and structure: A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer... Agent: Monolithic 3d Inc.

20120129302 - Fabricating photonics devices fully integrated into a cmos manufacturing process: Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics... Agent: International Business Machines Corporation

20120129304 - Fin-type field effect transistor: Disclosed herein are improved fin-type field effect transistor (FinFET) structures and the associated methods of manufacturing the structures. In one embodiment FinFET drive current is optimized by configuring the FinFET asymmetrically to decrease fin resistance between the gate and the source region and to decrease capacitance between the gate and... Agent: International Business Machines Corporation

20120129303 - Methods for manufacturing passivation layer and thin film transistor array substrate: The present invention provides methods for manufacturing a passivation layer and a thin film transistor (TFT) array substrate. The method for manufacturing the passivation layer comprises the following steps: placing a substrate in a vacuum process chamber; providing an ammonia gas and a nitrogen gas into the vacuum process chamber;... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20120129305 - Method for manufacturing a mos-field effect transistor: A method for manufacturing a Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has the step of implanting a base region of said MOSFET within an epitaxial layer of a semiconductor chip comprising an insulated gate structure used as a masking element, wherein the implant beam is angled with respect to a vertical axis of... Agent:

20120129306 - Configuration and method to form mosfet devices with low resistance silicide gate and mesa contact regions: A novel integration scheme for forming power MOSFET, particularly forming salicided layers for both gate contact regions and mesa contact regions, as well as using multiple energy contact implants through the salicided layer to form conductive body contacts which short to the source region by the salicided layers.... Agent:

20120129307 - Semiconductor device and manufacturing method of the same: The present invention provides a technique capable of attaining an improvement in current detection accuracy in a trench gate type power MISFET equipped with a current detection circuit. Inactive cells are disposed so as to surround the periphery of a sense cell. That is, the inactive cell is provided between... Agent: Renesas Electronics Corporation

20120129308 - Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon material: A silicon/germanium material and a silicon/carbon material may be provided in transistors of different conductivity type on the basis of an appropriate manufacturing regime without unduly contributing to overall process complexity. Furthermore, appropriate implantation species may be provided through exposed surface areas of the cavities prior to forming the corresponding... Agent: Globalfoundries Inc.

20120129309 - Method for fabricating high-gain mosfets with asymmetric source/drain doping for analog and rf applications: A method of fabrication of an analog, asymmetric Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is provided. The method may comprise forming a first gate oriented in a first direction over an active region of a semiconductor substrate, forming a second gate extending perpendicular to the first gate over a second active region, using a... Agent: International Business Machines Corporation

20120129310 - Methods of fabricating a semiconductor device having a high-k gate dielectric layer and semiconductor devices fabricated thereby: A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on... Agent:

20120129311 - Method of manufacturing a transistor device having asymmetric embedded strain elements: Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the... Agent: Globalfoundries Inc.

20120129312 - Method of forming e-fuse in replacement metal gate manufacturing process: Embodiment of the present invention provides a method of forming electronic fuse or commonly known as e-fuse. The method includes forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, the FET structure having a sacrificial gate electrode; implanting at least one dopant... Agent: International Business Machines Corporation

20120129313 - Thermally insulated phase material cells: A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer along at least one sidewall of the pore. The... Agent: International Business Machines Corporation

20120129314 - Method and resulting structure for deep trench polysilicon hard mask removal: A method of forming a capacitor structure includes forming a pad oxide layer overlying a substrate, a nitride layer overlying the pad oxide layer, an interlayer dielectric layer overlying the nitride layer, and a patterned polysilicon mask layer overlying the interlayer dielectric layer. The method then applies a first RIE... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120129315 - Method for fabricating semiconductor package: A method for fabricating a semiconductor package includes the steps of: providing an alignment board having a plurality of openings and a plurality of alignment marks corresponding to the openings, respectively; disposing a plurality of chips on the alignment board at positions corresponding to the openings according to the alignment... Agent: Siliconware Precision Industries Co., Ltd.

20120129316 - Method for forming fine pattern of semiconductor device: A method for forming fine pattern includes sequentially forming a first thin film and a second thin film over a target layer for patterning, forming a partition over the second thin film, removing the partition after forming spacers on sidewalls of the partition, forming first pattern of the second thin... Agent: Hynix Semiconductor Inc.

20120129317 - Method of manufacturing semiconductor integrated circuit device: In the present invention, in the exposure to light of a memory cell array or the like of a semiconductor memory or the like, when a group of unit openings for etching the STI trench regions in which the unit openings for etching the STI trench regions each having a... Agent: Renesas Electronics Corporation

20120129318 - Atmospheric pressure plasma etching apparatus and method for manufacturing soi substrate: The atmospheric pressure plasma etching apparatus is provided with a state detecting unit for detecting a state of the object to be processed, and the operation of the atmospheric pressure plasma etching apparatus is controlled in accordance with information detected by the state detecting unit. Thus, in the atmospheric pressure... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120129319 - Electrical antifuse, method of manufacture and method of programming: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance.... Agent: International Business Machines Corporation

20120129321 - Apparatus for manufacturing semiconductor: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space... Agent: Jusung Engineering Co., Ltd

20120129322 - Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles: A composite material includes at least two components, wherein at least one component is present in the form of nanoparticles, which consist of at least three metals and at least one non-metal and the diameter of which is less than one micrometre, preferably less than 200 nm. The novel composite... Agent: Isovoltaic Ag

20120129320 - Method of nisige epitaxial growth by introducing al interlayer: The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences

20120129323 - Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by... Agent: Getner Foundation LLC

20120129325 - Method for ion implant using grid assembly: A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions... Agent: Intevac, Inc.

20120129324 - Semiconductor structure made using improved multiple ion implantation process: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions... Agent:

20120129326 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, on one main surface of the substrate, a detection film having a light transmittance different from that of silicon carbide; confirming presence of the substrate by applying light to the detection... Agent: Sumitomo Electric Industries, Ltd.

20120129327 - Method of fabricating semiconductor device using a hard mask and diffusion: Provided is a method that can include forming a gate dielectric layer, a first diffusion layer, and a hard mask layer on a substrate defined to include first and second spaced apart regions, forming a photoresist pattern on the hard mask layer in the first region and exposing the hard... Agent:

20120129328 - Multiple layer barrier metal for device component formed in contact trench: A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining... Agent: Alpha & Omega Semiconductor, Inc.

20120129329 - Manufacturing method for semiconductor device: The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120129330 - Semiconductor devices employing high-k dielectric layers as a gate insulating layer and methods of fabricating the same: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region, forming a nitrogen-containing lower gate insulating layer on the semiconductor substrate, forming an upper gate insulating layer on the nitrogen containing lower gate insulating layer, forming a lower metal layer... Agent:

20120129331 - Methods of fabricating a semiconductor device including metal gate electrodes: A method of fabricating semiconductor devices having metal gate electrodes includes forming an insulating layer on a semiconductor substrate having a first region and a second region. The insulating layer is formed to include an interlayer insulating layer and a gate insulation layer. The interlayer insulating layer has first and... Agent: Samsung Electronics Co., Ltd.

20120129332 - Method for forming metal contacts: Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact... Agent: Rohm And Haas Electronic Materials LLC

20120129333 - Method for manufacturing semiconductor package and semiconductor package manufactured using the same: Provided are a method for manufacturing a semiconductor package and a semiconductor package manufactured using the method. The method includes providing a substrate having a first region and a second region having a higher step difference than the first region, i.e., having a difference in height, forming a mask pattern... Agent: Samsung Electronics Co., Ltd.

20120129334 - Semiconductor packages and methods of manufacturing the same: Provided are semiconductor packages and methods of manufacturing the semiconductor package. The semiconductor packages may include a substrate including a chip pad, a redistributed line which is electrically connected to the chip pad and includes an opening. The semiconductor packages may also include an external terminal connection portion, and an... Agent: Samsung Electronics Co., Ltd

20120129335 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device including the following steps: forming an insulator layer over a first conductor over a semiconductor substrate; forming a barrier layer to coat the surface of the insulator layer; forming a second conductor over the barrier layer; melting the second conductor in an atmosphere... Agent: Fujitsu Semiconductor Limited

20120129336 - Structures and methods for improving solder bump connections in semiconductor devices: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a trench formed in a dielectric layer which has at least a portion thereof devoid of a fluorine boundary layer. The structure further includes a copper wire in the trench having at... Agent: International Business Machines Corporation

20120129337 - Dual damascene process: A dual damascene process is disclosed. The process includes the steps of: forming a dielectric layer on a substrate; forming a first patterned mask on the dielectric layer, wherein the first patterned mask comprises an opening; forming a material layer on the dielectric layer and covering the first patterned mask;... Agent:

20120129338 - Method for manufacturing semiconductor device: When a wiring structure is formed by a trench-first dual damascene method, a first hard mask for forming via holes and a second hard mask for forming wiring trenches are sequentially formed on an interlayer insulating film, openings are formed at the first hard mask while using the second hard... Agent: Fujitsu Semiconductor Limited

20120129339 - Method of manufacturing a semiconductor device having a contact plug: There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insulation film and connected to either the source region or the... Agent: Elpida Memory, Inc.

20120129340 - Antifuse structure for in line circuit modification: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric... Agent: International Business Machines Corporation

20120129342 - Method for fabricating a semiconductor substrate with a co-planar backside metallization structure: A method for fabricating a backside metallization structure on a semiconductor substrate including moving a printhead having at least one nozzle orifice relative to the semiconductor substrate, and feeding an Al passivation layer ink and an AgAl soldering pad ink through said printhead such that both said Al passivation layer... Agent: Solarworld Innovations Gmbh

20120129341 - Method for fabricating via hole and through-silicon via: A method for fabricating a via hole includes forming a first mask pattern on a first surface of a wafer exposing a portion of the first surface of the wafer, forming a passivation region within the wafer by implanting impurities into the exposed portion of the wafer using the first... Agent: Hynix Semiconductor Inc.

20120129343 - Method of manufacturing semiconductor device: To provide a method of manufacturing a semiconductor device that can be in contact with both of an n-type SiC region and a p-type SiC region and can suppress increase in contact resistance due to oxidation, a method of manufacturing a semiconductor device includes the steps of preparing a SiC... Agent: Sumitomo Electric Industries, Ltd.

20120129344 - Process and apparatus for removal of contaminating material from substrates: A process for removing contaminating metals from a substrate to improve electrical performance is provided. Polycationic metals are known to be particularly detrimental to the electrical properties of an insulator or semiconductor substrate. The process includes the exposure of the substrate to an aqueous solution of at least one compound... Agent:

20120129345 - Composition and method for cleaning semiconductor substrates: The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at amble ratio of about 1:1 to about 10:1 in water, arid pH is adjusted to from about 6 to about... Agent:

20120129346 - Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate: A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water.... Agent:

20120129347 - Apparatus and method for incorporating composition into substrate using neutral beams: An apparatus and method for processing a surface of a substrate using neutral beams are provided to repeatedly process an oxide layer using the neutral beams having low energy to minimize electrical damage to the oxide layer and improve characteristics of the oxide layer. The apparatus is mounted in a... Agent:

20120129348 - Laser processing method: A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging... Agent: Hamamatsu Photonics K.k.

20120129349 - Method of forming patterns for semiconductor device: A method of forming patterns for a semiconductor device. The method includes: forming a first hard mask layer on a layer which is to be etched; forming a second hard mask layer on the first hard mask layer, wherein the second hard mask layer includes a first portion and a... Agent:

20120129350 - Method for reducing wordline bridge rate: The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer;... Agent: Macronix International Co., Ltd.

20120129351 - Composite removable hardmask: A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion... Agent: Applied Materials, Inc.

20120129353 - Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film: Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1);... Agent: Jsr Corporation

20120129352 - Silicon-containing film, resin composition, and pattern formation method: A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer... Agent: Jsr Corporation

20120129354 - Process for etching silicon with selectivity to silicon-germanium: A method for performing a selective etching process is described. The method includes preparing a substrate having a silicon layer (Si) and a silicon-germanium (SiGex) layer, and selectively etching the silicon layer relative to the silicon-germanium layer using a dry plasma etching process.... Agent: Tokyo Electron Limited

20120129355 - Method for texturing a surface of a semiconductor substrate and device for carrying out the method: A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl... Agent: Universitaet Konstanz

20120129356 - Method of fabricating semiconductor device: A method of forming a dielectric layer having an air gap to isolate adjacent wirings or a gate stack of the semiconductor device is provided. A method of fabricating a semiconductor device includes providing a semiconductor substrate on which a plurality of wirings are formed adjacent to one another and... Agent:

20120129357 - Two-dimensional patterning employing self-assembled material: A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the... Agent: International Business Machines Corporation

20120129359 - Laser processing method: A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object... Agent: Hamamatsu Photonics K.k.

20120129358 - Substrate processing apparatus and method of manufacturing semiconductor device: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support... Agent: Hitachi Kokusai Electric Inc.

20120122247 - Electronic device including a magneto-resistive memory device and a process for forming the electronic device: A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include... Agent: Everspin Technologies, Inc.

20120122246 - Method for manufacturing magnetic memory chip device: A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability... Agent: Renesas Electronics Corporation

20120122248 - Method of manufacturing semiconductor device: According to one embodiment, there is provided a method of manufacturing a semiconductor device having a buffer circuit. In the method, a plurality of semiconductor elements is formed on a semiconductor substrate. The plurality of semiconductor elements are connected in parallel to each other in the buffer circuit. In the... Agent: Kabushiki Kaisha Toshiba

20120122249 - Dopant marker for precise recess control: A semiconductor device is formed by implanting recess markers in a material during deposition and using the recess markers during etching of the material for precise in-situ removal rate definition and removal homogeneity-over-radius definition. An embodiment includes depositing a layer of material on a substrate, implanting first and second dopants... Agent: Globalfoundries Inc.

20120122250 - Apparatus and method for manufacturing led package: An apparatus for manufacturing an light emitting diode (LED) package, includes: a heating unit heating an LED package array in a lead frame state in which a plurality of LED packages are installed to be set in an array on a lead frame; a testing unit testing an operational state... Agent: Samsung Led Co., Ltd.

20120122251 - Stacked type semiconductor memory device and chip selection circuit: A stacked type semiconductor memory device of having a structure in which a plurality of semiconductor chips is stacked and a desired semiconductor chip can be selected by assigning a plurality of chip identification numbers different from each other are individually assigned to the plurality of semiconductor chips comprising: a... Agent: Elpida Memory Inc.

20120122253 - Apparatus and method of aligning and positioning a cold substrate on a hot surface: Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat... Agent: Applied Materials, Inc.

20120122252 - Method for inspecting substrate, substrate inspection apparatus, exposure system, and method for producing semiconductor device: There is provided a method for inspecting a substrate including: irradiating an illumination light onto a first surface or a second surface opposite to the first surface, of a substrate in which a pattern having a periodicity and extending from the first surface to an inside of the substrate is... Agent:

20120122255 - White light emitting diode and method of manufacturing the same: Provided is a white LED including a reflector cup; an LED chip mounted on the bottom surface of the reflector cup; transparent resin surrounding the LED chip; a phosphor layer formed on the transparent resin; and a light transmitting layer that is inserted into the surface of the phosphor layer... Agent: Samsung Led Co., Ltd.

20120122254 - White light-emitting diode package structure for simplifying package process and method for making the same: A white light-emitting diode package structure for simplifying package process includes a substrate unit, a light-emitting unit, a phosphor unit and a conductive unit. The light-emitting unit is disposed on the substrate, and the light-emitting unit has a positive conductive layer and a negative conductive layer. The phosphor unit has... Agent: Harvatek Corporation

20120122256 - Method for manufacturing light emitting diode: A method for manufacturing light emitting diodes includes steps of: providing a base have an upper conductive layer and a lower conductive layer on a top face and a bottom face thereof, respectively; forming a plurality of through holes in the base; defining a plurality of grooves to divide the... Agent: Advanced Optoelectronic Technology, Inc.

20120122257 - Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing... Agent: Sony Corporation

20120122258 - Method for manufacturing semiconductor light emitting device: One embodiment provides a method for manufacturing a semiconductor light emitting device, including: forming a semiconductor light emitting device wafer, by: forming a plurality of semiconductor layers on a principal surface of a substrate; and forming a P-type semiconductor layer on the semiconductor layers as an uppermost layer; and forming... Agent: Kabushiki Kaisha Toshiba

20120122259 - Method of manufacturing mems devices providing air gap control: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at... Agent: Qualcomm Mems Technologies, Inc.

20120122260 - Array of alpha particle sensors: An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation... Agent: International Business Machines Corporation

20120122261 - cmos imager photodiode with enhanced capacitance: A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The... Agent: International Business Machines Corporation

20120122262 - Thin film solar cell module and method of manufacturing the same: A thin film solar cell module includes a front substrate; a plurality of thin film solar cells disposed on the front substrate; a rear substrate disposed on the thin film solar cells; a plurality of inter-connection terminals electrically connected to the thin film solar cells, respectively, and exposed to an... Agent:

20120122263 - Method for producing photovoltaic cell: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on... Agent: Hitachi Chemical Company, Ltd.

20120122264 - Method for producing photovoltaic cell: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on... Agent: Hitachi Chemical Company, Ltd.

20120122265 - Method for producing photovoltaic cell: The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder... Agent: Hitachi Chemical Company, Ltd.

20120122266 - Porous lift-off layer for selective removal of deposited films: A porous lift off layer facilitates removal of films from surfaces, such as semiconductors. A film is applied over a patterned porous layer, the layer comprising openings typically larger than the film thickness. The porous material and the film are then removed from areas where film is not intended. The... Agent: 1366 Technologies Inc.

20120122267 - Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates: A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the... Agent:

20120122268 - Selenization of precursor layer containing culns2 nanoparticles: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1−y)2, CuGaS2, CuGa(Sy,Se1−y)2, Cu(InxGa1−x)S2, and Cu(InxGa1−x)(Sy,Se1−y)2 nanoparticles and combinations... Agent: Purdue Research Foundation

20120122269 - Plasma processing apparatus and method for manufacturing photovoltaic element using same: A method of manufacturing a photovoltaic element (710) capable of inhibiting the thicknesses and the qualities of formed films from being nonuniform includes steps of forming a substrate-side electrode (712), forming a photoelectric conversion layer (713, 714) with a plasma processing apparatus (1) including a first electrode (3) and a... Agent: Sanyo Electric Co., Ltd.

20120122273 - Direct current ion implantation for solid phase epitaxial regrowth in solar cell fabrication: An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing.... Agent:

20120122270 - Etching method for use with thin-film photovoltaic panel: The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional... Agent: E. I. Du Pont De Nemours And Company

20120122271 - Etching method to increase light transmission in thin-film photovoltaic panels: e

20120122272 - High-throughput flat top laser beam processing for back contact solar cells: Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and... Agent: Solexel, Inc.

20120122274 - Anisotropic semiconductor film and method of production thereof: The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid... Agent: Carben Semicon Limited

20120122275 - Methods of fabricating organic thin film transistors: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using... Agent:

20120122276 - Thermal evaporation apparatus, use and method of depositing a material: A thermal evaporation apparatus for depositing of a material on a substrate is described. The apparatus can comprise material storage means; heating means to generate a vapour of the material in the material storage means; vapour outlet means comprising a vapour receiving pipe having vapour outlet passages, and emission reducing... Agent:

20120122277 - Semiconductor device and method for manufacturing the semiconductor device: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120122278 - Method of manufacturing semiconductor package board: Disclosed herein is a method of method of manufacturing a semiconductor package board, including: providing a substrate including a connection part formed on one side thereof, the connection part being provided thereon with a solder layer; disposing a conductive heat generator equipped with current wiring on the solder layer; applying... Agent: Samsung Electro-mechanics Co., Ltd.

20120122279 - System for clamping heat sink: A system for clamping a heat sink that prevents excessive clamping force is provided. The system may include a heat sink, a semiconductor device, a printed circuit) board, and a cover. The semiconductor device may be mounted onto the circuit board and attached to the cover. The heat sink may... Agent: Harman International Industries, Incorporated

20120122280 - Antifuse structure for in line circuit modification: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric... Agent: International Business Machines Corporation

20120122281 - Method for fabricating a gan-based thin film transistor: A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask... Agent: National Chiao Tung University

20120122282 - Method of manufacturing semiconductor devices: A method of manufacturing semiconductor devices includes forming a plurality of lines arranged in a direction over a semiconductor substrate, forming mask patterns over the semiconductor substrate wherein the mask patterns intersect the lines, and forming junctions in the semiconductor substrate between the lines by performing an ion implantation process.... Agent: Hynix Semiconductor Inc.

20120122285 - Memory device having trapezoidal bitlines and method fo fabricating same: A memory device and a method of fabrication are provided. The memory device includes a semiconductor substrate and a charge trapping dielectric stack disposed over the semiconductor substrate. A gate electrode is disposed over the charge trapping dielectric stack, where the gate electrode electrically defines a channel within a portion... Agent:

20120122284 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures... Agent:

20120122283 - Methods of manufacturing a semiconductor device: A method includes forming a plurality of dummy gate structures on a substrate, each dummy gate structure including a dummy gate electrode and a dummy gate mask, forming a first insulation layer on the substrate and the dummy gate structures to fill a first space between the dummy gate structures,... Agent:

20120122286 - Methods of manufacturing semiconductor device: In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top... Agent: Samsung Electronics Co., Ltd

20120122287 - Localized compressive strained semiconductor: One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a second portion bonded to the substrate, and... Agent:

20120122288 - Method of fabricating a silicide layer: During a salicide process, and before a second thermal treatment is performed to a silicide layer of a semiconductor substrate, a thermal conductive layer is formed to cover the silicide layer. The heat provided by the second thermal treatment can be conducted to the silicide layer uniformly through the thermal... Agent:

20120122289 - Semiconductor device manufacturing method: Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a... Agent: Tokyo Electron Limited

20120122292 - Methods of forming a non-volatile resistive oxide memory array: A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches... Agent: Micron Technology

20120122291 - Nonvolatile memory elements: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a... Agent: Intermolecular, Inc.

20120122290 - Systems and methods for fabricating self-aligned memory cell: Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnO3 (PCMO) layer above the insulator and the metal... Agent: 4d-s Pty Ltd.

20120122293 - Method of forming mim capacitor structure in feol: A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upper surface of the first capacitor plate; a capacitor dielectric layer formed... Agent: International Business Machines Corporation

20120122294 - Method of manufacturing semiconductor device: In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part,... Agent: Kabushiki Kaisha Toshiba

20120122295 - Semiconductor device with recess and fin structure: The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation... Agent: 658868 N.b. Inc.

20120122296 - Methodology for wordline short reduction: The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) providing a plurality of SASTIs with a plurality of first POLY cells deposited thereon; and (b) depositing a first fill-in material having a relatively high etching rate oxide-like material in the... Agent: Macronix International Co., Ltd.

20120122297 - Method of fabricating a nonvolatile memory device: A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer... Agent:

20120122298 - Method for manufacturing semiconductor substrate: Defects in a semiconductor substrate are reduced. A semiconductor substrate with fewer defects is manufactured with high yield. Further, a semiconductor device is manufactured with high yield. A semiconductor layer is formed over a supporting substrate with an oxide insulating layer interposed therebetween, adhesiveness between the supporting substrate and the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120122299 - Method for forming substrate with buried insulating layer: A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate... Agent: Shanghai Simgui Technology Co., Ltd.

20120122300 - Film stress management for mems through selective relaxation: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.... Agent: Lucent Technologies Inc.

20120122302 - Apparatus and methods for deposition of silicon carbide and silicon carbonitride films: Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C.... Agent: Applied Materials, Inc.

20120122301 - Method of manufacturing gan-based film: A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal... Agent: Sumitomo Electric Industries, Ltd.

20120122303 - Semiconductor structure having wide and narrow deep trenches with different materials: Disclosed is a method of forming a semiconductor device structure in a semiconductor layer. The method includes forming a first trench of a first width and a second trench of a second width in the semiconductor layer; depositing a layer of first material which conforms to a wall of the... Agent: International Business Machines Corporation

20120122304 - System and method for transferring substrates in large scale processing of cigs and/or cis devices: The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first... Agent: Stion Corporation

20120122305 - Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures: An electronic device includes a drift layer having a first conductivity type, a buffer layer having a second conductivity type, opposite the first conductivity type, on the drift layer and forming a P-N junction with the drift layer, and a junction termination extension region having the second conductivity type in... Agent:

20120122306 - Diffusing agent composition, and method for forming an impurity diffusion layer: A diffusing agent composition contains a condensation product (A) and an impurity diffusion component (B). The condensation product (A) is a reaction product yielded by hydrolyzing an alkoxysilane. The impurity diffusion component (B) is a monoester or diester of phosphoric acid, or a mixture thereof.... Agent: C/o Tokyo Ohka Kogyo Co., Ltd.

20120122307 - Method of manufacturing semiconductor devices: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart from each other, the second trench surrounding the first trenches, the second trench being wider than the first trench.... Agent: Fuji Electric Co., Ltd.

20120122308 - Method of manufacturing junction barrier schottky diode with dual silicides: An integrated circuit, including a junction barrier Schottky diode, has an N type well, a P-type anode region in the surface of the well, and an N-type Schottky region in the surface of the well and horizontally abutting the anode region. A first silicide layer is on and makes a... Agent:

20120122309 - Method of fabricating semiconductor device using a work function control film: A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of... Agent: Samsung Electronics Co., Ltd.

20120122310 - Method of manufacturing semiconductor device: In one embodiment, a method of manufacturing a semiconductor device includes forming a first to fourth films over a semiconductor substrate. The method further includes patterning the fourth film to form sparse and dense portions in which patterns of the fourth film are sparse and dense, respectively, and etching the... Agent:

20120122311 - Metal layer formation method for diode chips/wafers: An electroless plated metal layer formation method for forming a metal layer on a diode chip/wafer for wire bonding is disclosed to include the step of forming a metal base material on a diode chip/wafer adapted for inducing a reduction system to cause a catalytic reaction at location(s) where the... Agent:

20120122312 - Methods for forming planarized hermetic barrier layers and structures formed thereby: Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a conductive material in an interconnect opening within an interlayer dielectric material that is disposed on a substrate, forming a low density dielectric material on a surface of the dielectric layer and on a... Agent:

20120122313 - Metal precursors for deposition of metal-containing films: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the... Agent: L'air Liquide Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude

20120122314 - Mems element: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to... Agent: Nxp B.v.

20120122315 - Self-aligned devices and methods of manufacture: A method includes forming patterned lines on a substrate having a predetermined pitch. The method further includes forming spacer sidewalls on sidewalls of the patterned lines. The method further includes forming material in a space between the spacer sidewalls of adjacent patterned lines. The method further includes forming another patterned... Agent: International Business Machines Corporation

20120122316 - Method for surface treatment of a wafer: m

20120122317 - Pulsed laser deposition with exchangeable shadow masks: The invention relates to a device for pulsed laser deposition, which device comprises: a substrate mount with a substrate mounted thereon; a target mount with a target material mounted thereon and opposite of the substrate mount; a laser device for directing a laser beam on the target material; and a... Agent: Solmates B.v.

20120122318 - Substrate processing apparatus and method for manufacturing semiconductor device: The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas... Agent: Hitachi Kokusai Electric Inc.

20120122319 - Coating method for coating reaction tube prior to film forming process: Contamination of a substrate can be prevented or suppressed. A substrate processing apparatus includes a reaction tube having an inner space divided by a barrier wall into a film forming space and a plasma generating space. When a desired film is formed on a substrate placed inside the reaction tube,... Agent:

20120122320 - Method of processing low k dielectric films: Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described.... Agent: Applied Materials, Inc.

20120122321 - Thermal management and method for large scale processing of cis and/or cigs based thin films overlying glass substrates: thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality... Agent: Stion Corporation

20120115250 - Concave-convex pattern forming method and magnetic tunnel junction element forming method: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a... Agent: Kabushiki Kaisha Toshiba

20120115251 - Process for selectively patterning a magnetic film structure: Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof,... Agent: International Business Machines Corporation

20120115253 - Semiconductor apparatus: A method for manufacturing a semiconductor apparatus includes forming a semiconductor device on a principal surface of a substrate, in which the semiconductor device includes an interconnect layer, forming a buffer film which covers the semiconductor device and prevents diffusion of a magnetic material, and forming a magnetic shielding film... Agent: Renesas Electronics Corporation

20120115252 - Semiconductor device and method of manufacturing the same: Provided is a semiconductor device, including a silicon substrate, a first insulating film formed on the silicon substrate, a first conductive plug formed in an inside of a first contact hole of the first insulating film, an underlying conductive film having a flat surface formed on the first conductive plug... Agent: Fujitsu Semiconductor Limited

20120115254 - Heating plate with planar heater zones for semiconductor processing: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater elements made of... Agent: Lam Research Corporation

20120115255 - Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers: A semiconductor wafer processing and analysis apparatus (20) includes a processing micro chamber (22) for closely receiving a semiconductor wafer (27) therein. The chamber may be opened for loading and removing the semiconductor wafers and then closed for processing of the wafer wherein chemical reagents and other fluids are introduced... Agent:

20120115256 - Method and device for selectively adding timing margin in an integrated circuit: A method, system, and integrated circuit including selectively added timing margin. The method, for integrating statistical timing and automatic test pattern generation (ATPG) to selectively add timing margin in an integrated circuit, includes identifying, while a chip is in design, paths that are unable to be robustly tested “at speed”... Agent: International Business Machines Corporation

20120115257 - Film forming method and film forming apparatus: A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the... Agent: Fuji Electric Co., Ltd.

20120115258 - Methods for monitoring the amount of metal contamination in a process: Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.... Agent: Memc Electronic Materials, Inc.

20120115259 - Method for fabricating flexible electronic device and electronic device fabricated thereby: Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating... Agent:

20120115260 - Organic light emitting device and method for manufacturing the same: A top emission OLED includes a driving TFT including a channel region and source and drain electrodes. A power supply, a ground line, and a light emitting diode are electrically coupled to the TFT and an auxiliary electrode is electrically coupled to the ground line and to the source electrode... Agent: Lg Display Co., Ltd.

20120115263 - Chip-type led and method of manufacturing the same: An embodiment of the present invention has an insulating substrate in which a first concave hole for mounting an LED chip and a second concave hole for connecting a metallic small-gauge wire are formed, where a metallic sheet that serves as a first wiring pattern is formed at a portion... Agent: Sharp Kabushiki Kaisha

20120115262 - Laser assisted transfer welding process: A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp... Agent: Semprius, Inc.

20120115261 - Method for manufacturing light emitting device package and frame for manufacturing light emitting device package: A method for manufacturing a light emitting device package includes: preparing a base frame including an annular base part, at least a pair of lead parts extending to an inner side of the base part, and at least one support part extending to the inner side of the base part... Agent:

20120115265 - Display device and method of manufacturing the same: A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive layer and a first metal layer are orderly formed on the substrate. A conductive stack layer is formed within each of the TFT/pixel/gate-line regions and the end of... Agent: Au Optronics Corp.

20120115264 - Pixel element of liquid crystal display and method for producing the same: The present invention provides a method for forming a pixel element. The method comprises: forming a first patterned metal layer within the pixel area; forming an insulation layer on the first patterned metal layer; forming a semiconductor layer on the insulation layer; patterning the semiconductor layer to form bend seed... Agent:

20120115266 - Manufacturing method for organic optoelectronic thin film: Disclosed is a manufacturing method for an organic optoelectronic thin film comprising the steps of providing a substrate and a first electrode; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes polyethylene glycol (PEG); forming a conductive polymer layer on the first electrode; disposing the substrate and... Agent:

20120115268 - Laser liftoff structure and related methods: Light-emitting devices, and related components, systems, and methods associated therewith are provided.... Agent: Luminus Devices, Inc.

20120115267 - Method for fabricating light emitting device: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.... Agent:

20120115269 - Sacraficial layers made from aerogel for microelectromechanical systems (mems) device fabriaction processes: Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial... Agent: Honeywell International Inc.

20120115270 - Solid-state image pickup device and method of manufacturing same: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal... Agent: Sony Corporation

20120115271 - Low temperature sintering of dye-sensitised solar cells: This invention relates to the field of dye-sensitized solar cells and discloses a method for reducing the temperature necessary for sintering the metal oxide paste coating the electrode.... Agent: Bangor University

20120115272 - Production method and production device for solar battery: When a solar battery configured by laminating a p-type layer, an i-type layer and an n-type layer in this order is produced, an n-type microcrystalline silicon thin film is formed as an n-type layer under film forming conditions wherein a ratio of the flow rate of an n-type dopant-containing gas... Agent: Sanyo Electric Co., Ltd.

20120115273 - Manufacturing method of photoelectric conversion device: A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115274 - Plasma deposition of amorphous semiconductors at microwave frequencies: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave... Agent:

20120115275 - Forming photovoltaic conductive features from multiple inks: Photovoltaic conductive features and processes for forming photovoltaic conductive features are described. The process comprises (a) providing a substrate comprising a passivation layer disposed on a silicon layer; (b) depositing a surface modifying material onto at least a portion of the passivation layer; (c) depositing a composition comprising at least... Agent: Cabot Corporation

20120115276 - Amorphous oxide semiconductor and thin film transistor using the same: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and... Agent: Canon Kabushiki Kaisha

20120115277 - Multi-chip stacking method to reduce voids between stacked chips: A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface... Agent: Walton Advanced Engineering Inc.

20120115278 - Stacked semiconductor package without reduction in data storage capacity and method for manufacturing the same: A stacked semiconductor package includes a semiconductor chip module including at least two semiconductor chips with a semiconductor chip body having an upper surface, a lower surface, side surfaces coupling the upper surface and the lower surface, and a circuit part. The semiconductor chips include pads coupled to the circuit... Agent: Hynix Semiconductor Inc.

20120115279 - Chip-scale semiconductor die packaging method: A method of packaging one or more semiconductor dies is provided. The method includes: providing a first die having a circuit surface and a connecting surface; providing a chip-scale frame having an inside surface and an outside surface, the chip-scale frame having a well region having an opening in the... Agent: Semtech Corporation

20120115280 - Film for semiconductor and semiconductor device manufacturing method: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer... Agent:

20120115281 - Method of manufacturing semiconductor device: wherein X is a single bond, —CH2—, —S— or —O—; and R1 to R4, which may be the same as or different, are each —H or —CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions... Agent: Nitto Denko Corporation

20120115282 - Integrated electrostatic discharge (esd) device: A method for making a semiconductor device includes providing a substrate of a first conductivity type and having a surface region, forming a well region of a second conductivity type and having a first depth in the substrate, adding a gate dielectric layer overlying the surface region, adding a gate... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120115283 - Wiring substrate, semiconductor device, and method for manufacturing thereof: The present invention provides a thin wiring pattern such as wiring formed by discharging a droplet. In the present invention, a porous (including microporous) substance is formed as a base film in forming pattern by using a droplet discharge method (also referred to as an ink-jetting method). One feature of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115285 - Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device: A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115284 - Method for manufacturing multi-gate transistor device: A method for manufacturing a multi-gate transistor device includes providing a semiconductor substrate having a first patterned semiconductor layer formed thereon, sequentially forming a gate dielectric layer and a gate layer covering a portion of the first patterned semiconductor layer on the semiconductor substrate, removing a portion of the first... Agent:

20120115286 - Thin-film transistor producing method: Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as... Agent: Sharp Kabushiki Kaisha

20120115287 - Manufacturing method of soi mos device eliminating floating body effects: The present invention discloses a manufacturing method of SOI MOS device eliminating floating body effects. The active area of the SOI MOS structure according to the present invention includes a body region, a N-type source region, a N-type drain region, a heavily doped P-type region, wherein the N-type source region... Agent:

20120115288 - Method for fabricating active device array substrate: A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric... Agent: Au Optronics Corporation

20120115289 - Tft charge storage memory cell having high-mobility corrugated channel: Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is... Agent:

20120115290 - Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device: The crystalline semiconductor film is formed following steps that supplying a film formation gas to a second gas diffusion area from a gas introduction port provided in an upper electrode; supplying the film formation gas to a first gas diffusion area from the second gas diffusion area through holes provided... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120115291 - Method for manufacturing semiconductor device, and semiconductor device: A semiconductor device includes a first MISFET having a first conduction type channel and formed on a semiconductor substrate; a second MISFET having a second conduction type channel and formed on the semiconductor substrate; a first strain film having a first sign strain that covers a region where the second... Agent: Fujitsu Semiconductor Limited

20120115292 - Method for integrating sonos non-volatile memory into a standard cmos foundry process flow: An embodiment of a method is disclosed to integrate silicon oxide nitride oxide silicon (SONOS) non-volatile memory (NVM) into a conventional complementary metal oxide semiconductor (CMOS) semiconductor foundry process flow. An embodiment of the method only adds a few additional steps to a standard CMOS foundry process flow and makes... Agent:

20120115293 - Methods of manufacturing semiconductor devices: In a method of manufacturing a semiconductor device, a plurality of sacrificial layers and a plurality of insulating interlayers are repeatedly and alternately on a substrate. The insulating interlayers include a different material from a material of the sacrificial layers. At least one opening through the insulating interlayers and the... Agent:

20120115294 - Methods of forming nonvolatile memory devices having electromagnetically shielding source plates: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate including a cell array region, memory cell transistors disposed at the cell array region, bitlines disposed on the memory cell transistors, and a source plate disposed between the memory cell transistors... Agent:

20120115295 - Graphene based switching device having a tunable bandgap: A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.... Agent: International Business Machines Corporation

20120115296 - Tunnel field-effect transistor with gated tunnel barrier: A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to... Agent: Imec

20120115297 - Method for fabricating a tunneling field-effect transistor: The present invention discloses a method for self-alignedly fabricating tunneling field-effect transistor (TFET) based on planar process, thereby lowering requirements on a photolithography process for fabricating the planar TFET. In the method, the source region and the drain region of the TFET are not directly defined by photolithography; rather, they... Agent: Peking University

20120115298 - Method of fabricating gate and method of manufacturing semiconductor device using the same: A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate.... Agent:

20120115299 - Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion... Agent:

20120115301 - Metal capacitor and method of making the same: A method of making a metal capacitor includes the following steps. A dielectric layer having a dual damascene metal interconnection and a damascene capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the damascene capacitor electrode. The treatment can be... Agent:

20120115300 - Method for manufacturing semiconductor memory device: In a method for manufacturing a semiconductor memory device, a three dimensional lower electrode including a titanium nitride film is formed on a semiconductor substrate, and a dielectric film is formed on the surface of the lower electrode. After a first upper electrode is formed at a temperature that the... Agent: Elpida Memory, Inc.

20120115302 - Method to reduce a via area in a phase change memory cell: A memory cell structure and method to form such structure. The method partially comprised of forming a via within an oxidizing layer, over the center of a bottom electrode. The method includes depositing a via spacer along the sidewalls of the via and oxidizing the via spacer. The via spacer... Agent: International Business Machines Corporation

20120115303 - Method of fabricating damascene structures: Method of forming wires in integrated circuits. The methods include forming a wire in a first dielectric layer on a substrate; forming a dielectric barrier layer over the wire and the first dielectric layer; forming a second dielectric layer over the barrier layer; forming one or more patterned photoresist layers... Agent: International Business Machines Corporation

20120115304 - Isolation structure and formation method thereof: An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from... Agent: Macronix International Co., Ltd.

20120115305 - Method and structure for wafer to wafer bonding in semiconductor packaging: A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20120115306 - Deflector array, charged particle beam drawing apparatus, device manufacturing method, and deflector array manufacturing method: A deflector array includes a first base substrate including a plurality of apertures formed thereon, and a plurality of deflector chips including a plurality of apertures formed thereon and a plurality of electrode pairs disposed at both sides of at least a part of the plurality of apertures. The plurality... Agent: Canon Kabushiki Kaisha

20120115307 - Methods of manufacturing semiconductor chips: A method of manufacturing semiconductor chips includes providing a semiconductor substrate including circuit regions, irradiating the semiconductor substrate with a laser beam onto to form a frangible layer, and polishing the semiconductor substrate to separate the circuit regions of the semiconductor substrate from one another into semiconductor chips. The frangible... Agent: Samsung Electronics Co., Ltd.

20120115308 - Fabrication method for dicing of semiconductor wafers using laser cutting techniques: A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by... Agent:

20120115311 - Method for forming a multilayer structure: The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3or P-doped semiconductor material, and a second layer made from semiconductor... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120115310 - Method of sige epitaxy with high germanium concentration: The present invention discloses a method of SiGe epitaxy with high germanium concentration, a germanium concentration can be increased by reducing the percentage of silane and germane during introduction silane and germane. With the same flow of germanium source, the germanium concentration is significantly increased as the germane flow is... Agent:

20120115309 - Methods of manufacturing a vertical type semiconductor device: Methods of manufacturing a semiconductor device include forming a stopping layer pattern in a first region of a substrate. A first mold structure is formed in a second region of the substrate that is adjacent the first region. The first mold structure includes first sacrificial patterns and first interlayer patterns... Agent:

20120115313 - Semiconductor device manufacturing apparatus and method: A sealing member is lifted to cause its edge to be in contact with a contact surface of a support member. In the state where a precision ejection nozzle is isolated, a gas exhaust unit is operated to exhaust the inside of a chamber to reduce the pressure in the... Agent: Tokyo Electron Limited

20120115312 - Thin films for photovoltaic cells: In one aspect, a method for forming CIGSSe-based thin films includes depositing at least two layers of particles on a substrate. At least one layer includes a CIGSSe particle having a chemical composition denoted by Cu(InI-xGax)(S1-ySey)2 where 0≦x ≦1 and 0≦y≦1. The particle layers are annealed individually or in combination... Agent: Purdue Research Foundation

20120115314 - Plasma processing apparatus and method of producing amorphous silicon thin film using same: Disclosed is a plasma processing apparatus, wherein a plasma-generating electrode has a plurality of gas exhaust holes which run through the plasma-generating electrode from the surface facing a substrate held by a substrate-holding mechanism, and reach a gas exhaust chamber; gas-feeding pipes, provided connected to a gas-introducing pipe, have gas-feeding... Agent: Toray Industries, Inc,

20120115315 - Low temperature gst process: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate;... Agent: Advanced Technology Materials, Inc.

20120115316 - Crystallization apparatus, crystallization method, and method of manufacturing organic light-emitting display device, which use sequential lateral solidification: A crystallization apparatus, which uses sequential lateral solidification (SLS) and crystallizes an amorphous silicon layer formed on a substrate, includes a laser generating device, a first optical system, a second optical system, and a path switching member. The laser generating device is configured to emit a laser beam. The first... Agent:

20120115317 - Plasma doping method and apparatus thereof: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied... Agent:

20120115318 - Method for low temperature ion implantation: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to... Agent: Advanced Ion Beam Technology, Inc.

20120115319 - Contact pad: The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for... Agent: Cree, Inc.

20120115320 - Semiconductor device having decreased contact resistance and method for manufacturing the same: A semiconductor device includes a first plug formed on a semiconductor substrate and exposed on side and upper surfaces of an upper part thereof and a second plug formed on the first plug to contact the exposed side and upper surfaces of the upper part of the first plug.... Agent: Hynix Semiconductor Inc.

20120115321 - Method for removing polymer after etching gate stack structure of high-k gate dielectric/metal gate: The present invention provides a method for removing polymer after etching a gate stack structure of high-K gate dielectric/metal gate. The method mainly comprises the following steps: 1): forming a gate stack structure of interface SiO2/high-K gate dielectric/metal gate/poly-silicon/hard mask in sequence on a silicon substrate with device isolations formed... Agent: Institute Of Microelectronics, Chinese Academy Of Science

20120115322 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: forming a plurality of photoresist patterns over a substrate structure; forming an insulation layer for a spacer over a structure including the photoresist patterns; forming a plurality of spacers on sidewalls of the photoresist patterns by anisotropically etching the insulation layer, and... Agent:

20120115323 - Semiconductor device manufacturing method and semiconductor device: A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for... Agent:

20120115325 - Ion-induced atomic layer deposition of tantalum: Systems, methods, and apparatus for depositing a tantalum layer on a wafer substrate are disclosed. In one aspect, a tantalum layer may be deposited on a surface of a wafer substrate using an ion-induced atomic layer deposition process with a tantalum precursor. A copper layer may be deposited on the... Agent:

20120115324 - Method for manufacturing a semiconductor device having a refractory metal containing film: A semiconductor device and a method for manufacturing the same of the present invention in which the semiconductor device is provided with a fuse structure or an electrode pad structure, suppress the copper blowing-out from a copper containing metal film. The semiconductor device comprises a silicon substrate, SiO2film provided on... Agent: Renesas Electronics Corporation

20120115326 - Method of forming metal silicide regions: The method described herein involves the formation of metal silicide regions. The method may involve forming a layer of refractory metal on a structure comprising silicon, forming a layer of silicon on the layer of refractory metal and, after forming the layer of silicon, performing at least one heat treatment... Agent: Globalfoundries Inc.

20120115327 - Method of manufacturing via hole and method of manufacturing semiconductor device having via holes: A first metal mask has a portion exposed at an opening of a second metal mask. The second metal mask is formed to be thicker than the first metal mask. The thickness of the first and second metal masks is such that the etching at an opening of the first... Agent: Mitsubishi Electric Corporation

20120115328 - Electroforming technique for mask formation: A method for making a mask for semiconductor manufacturing. The method includes providing a base layer, forming a conductive layer on the base layer, and forming a photoresist layer on the conductive layer. Additionally, the method includes exposing selectively the photoresist layer to an energy illumination, developing the photoresist layer... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120115329 - Depositing tungsten into high aspect ratio features: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is... Agent:

20120115330 - Metal-insulator-semiconductor tunneling contacts: A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.... Agent:

20120115331 - Methods of forming fine patterns and methods of fabricating semiconductor devices: Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may... Agent: Samsung Electronics Co., Ltd.

20120115332 - Method of post etch polymer residue removal: A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The... Agent: Lam Research Corporation

20120115333 - Polybenzoxazole precursor, photosensitive resin composition using the same, and manufacturing method of semiconductor device: m

20120115334 - Method of depositing dielectric films using microwave plasma: Embodiments of the invention describe a method for forming dielectric films for semiconductor devices. The method includes providing a substrate in a process chamber containing a microwave plasma source, introducing into the process chamber a non-metal-containing process gas including a deposition gas having a carbon-nitrogen intermolecular bond, forming a plasma... Agent:

20120107964 - Low-cost non-volatile flash-ram memory: A method of flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory... Agent: Avalanche Technology, Inc.

20120107966 - Magnetic tunnel junction device and fabrication: A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized... Agent: Qualcomm Incorporated

20120107962 - Method of fabricating epitaxial semiconductor devices: A method of fabricating epitaxial semiconductor devices includes: (a) forming an etch limiting film that includes a sacrificial layer on an epitaxial substrate; (b) growing epitaxially layers of a semiconductor structure on the sacrificial layer; (c) forming on the semiconductor structure a layer of a device substrate that can be... Agent: National Cheng Kung University

20120107963 - Semiconductor device and manufacturing method thereof: The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region;... Agent: Fujitsu Semiconductor Limited

20120107965 - Semiconductor device and method for manufacturing the same: A semiconductor device includes an insulating film provided over a semiconductor substrate, a conductive plug buried in the insulating film, an underlying conductive film which is provided on the conductive plug and on the insulating film and which has a flat upper surface, and a ferroelectric capacitor provided on the... Agent: Fujitsu Semiconductor Limited

20120107967 - Method for fabrication of a semiconductor device and structure: A method of manufacturing a semiconductor wafer, the method including: providing a first monocrystalline layer including first transistors and interconnecting metal layers to perform at least one first electronic function; providing a second monocrystalline layer on top of the metal layers, wherein the second monocrystalline layer includes second transistors to... Agent: Monolithic 3d Inc.

20120107968 - Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and method of estimating damage from formation of scribe groove: A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the... Agent: Sumitomo Electric Industries, Ltd.

20120107970 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device is provided to improve the reliability of electrical coupling of the semiconductor device. The manufacturing method includes the steps of (a) laminating a main conductive film (base film) and a stopper insulating film (film to be measured) above the main conductive film, over... Agent: Renesas Electronics Corporation

20120107969 - Method and system for comparing lithographic processing conditions and or data preparation processes: A set of optical rule checker (ORC) markers are identified in a simulated lithographic pattern generated for a set of data preparation parameters and lithographic processing conditions. Each ORC marker identifies a feature in the simulated lithographic pattern that violates rules of the ORC. A centerline is defined in each... Agent: International Business Machines Corporation

20120107971 - Substrate polishing metrology using interference signals: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the... Agent:

20120107972 - Laser diode and method of manufacturing the same: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel... Agent: Sony Corporation

20120107973 - Method for producing lamps: A method for producing luminous means proposes providing a carrier serving as a heat sink, said carrier comprising a planar chip mounting region. The planar chip mounting region is structured for the purpose of producing a first partial region and at least one second partial region. In this case, the... Agent: Osram Opto Semiconductors Gmbh

20120107976 - Led package and method of manufacturing the same: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.... Agent: Samsung Led Co., Ltd.

20120107974 - Manufacturing light emitting diode (led) packages: A method of manufacturing an LED package includes mounting a large panel frame/substrate (LPF/S) having a substantially square shape to a ring. The LPF/S includes a plurality of die pads and a corresponding plurality of leads arranged in a matrix pattern. Each of the die pads includes a planar chip... Agent: Carsem (m) Sdn. Bhd.

20120107975 - Method for packaging light emitting diode: An LED packaging method includes: providing a mold with two isolated receiving spaces and a substrate with a die supporting portion and an electrode portion respectively received in the two receiving spaces; disposing an LED die on the die supporting portion and electrically connecting the LED die to the electrode... Agent: Advanced Optoelectronic Technology, Inc.

20120107977 - Polarized light emitting diode device and method for manufacturing the same: The present invention relates to a polarized light emitting diode (LED) device and the method for manufacturing the same, in which the LED device comprises: a base, a light emitting diode (LED) chip, a polarizing waveguide and a packaging material. In an exemplary embodiment, the LED chip is disposed on... Agent: Industrial Technology Research Institute

20120107980 - Liquid crystal display device and method of fabricating the same: A liquid crystal display device and a method of fabricating the same is disclosed, to provide a liquid crystal display device to simplify the process and decrease the fabrication cost, the liquid crystal display device includes a first substrate having a color filter and a second substrate having a thin... Agent:

20120107979 - Method for manufacturing light emitting device: A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type... Agent:

20120107978 - Method of fabricating flexible display device: A method of fabricating a flexible display device includes: forming a plastic substrate on a carrier substrate, the plastic substrate including an active area and a non-active area surrounding the active area; forming an array element on the carrier substrate, the array element including a plurality of layers and having... Agent:

20120107981 - Semiconductor light sources, systems, and methods: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming... Agent: Phoseon Technology, Inc.

20120107982 - Manufacturing method for array substrate with fringe field switching type thin film transistor liquid crystal display: Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20120107984 - Laser crystallization system and method of manufacturing display apparatus using the same: A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first... Agent: Samsung Mobile Display Co., Ltd.

20120107983 - Method of fabricating array substrate: A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer... Agent:

20120107985 - Semiconductor device and its manufacturing method: A manufacturing method of a semiconductor device includes forming a pixel portion and a driving circuit including a semiconductor layer. A scan line in a pixel portion and a first wiring in a driving circuit are formed by patterning a first conductive layer, and a data line in the pixel... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120107986 - Organic el display device: An organic EL display device includes a pixel electrode which is disposed in each of first to third organic EL elements, a first light emission layer which includes a first dopant material having a first absorbance peak, the first light emission layer extending over the first to third organic EL... Agent:

20120107989 - Cross-linkable iridium complexes and organic light-emitting devices using the same: Organic devices comprising an organic layer, wherein the organic layer is non-electroluminescent and comprises a cross-linked metal complex. The cross-linked metal complex may be formed by cross-linking a cross-linkable iridium complex, which comprises a set of ligands coordinated to a central iridium atom. One or more of the ligands have... Agent:

20120107988 - Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device: Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer,... Agent: Samsung Electronics Co., Ltd.

20120107987 - Method of manufacturing semiconductor light emitting device: In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode... Agent:

20120107991 - Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices: A III-nitride-based light emitting device having a multiple quantum well (MQW) structure and a method for fabricating the device, wherein at least one barrier in the MQW structure is doped with magnesium (Mg). The Mg doping of the barrier is accomplished by introducing a bis(cyclopentadienyl)magnesium (Cp2Mg) flow during growth of... Agent: The Regents Of The University Of California

20120107990 - Method for manufacturing semiconductor light emitting device and semiconductor crystal growth apparatus: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include a crystal growth process. The crystal growth process is configured to grow a stacked structure of compound semiconductor composed of a group III element and a group V element on a... Agent: Kabushiki Kaisha Toshiba

20120107993 - Method of making a micro-electro-mechanical-systems (mems) device: A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form... Agent:

20120107992 - Method of producing layered wafer structure having anti-stiction bumps: A method (50) for producing a layered wafer structure (24) having anti-stiction bumps (22) entails producing the anti-stiction bumps (22) in a surface (32) of a substrate (26) or, alternatively, in a surface (48) of a substrate (28). The method (50) further entails coupling the substrates (26, 28) with an... Agent: Freescale Semiconductor, Inc.

20120107994 - Manufacturing method of semiconductor device: In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by... Agent: Denso Corporation

20120107995 - Process for producing solar cell module: A process for producing a solar cell module, including (a) forming a seal part made of e.g. a double sided adhesive tape on the edge of a surface of a transparent surface material (first surface material), (b) supplying a liquid state photocurable resin composition to the region enclosed by the... Agent: Asahi Glass Company, Limited

20120107996 - Surface treatment process performed on a transparent conductive oxide layer for solar cell applications: Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber,... Agent: Applied Materials, Inc.

20120107998 - Ion implanted solar cells with in situ surface passivation: Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal... Agent: Suniva, Inc.

20120107997 - Method of manufacturing solar cell: In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the... Agent:

20120107999 - Method of fabricating flexible artificial retina devices: Fabrication methods for a flexible device for retina prosthesis are described. Layered structures including an array of pixel units may be formed over a substrate. Each pixel unit may comprise a processing circuitry, a micro electrode and a photo sensor. A first set of biocompatible layers may be formed over... Agent: National Tsing-hua University

20120108000 - Method of fabricating metal oxide semiconductor device: A method of fabricating an MOS device is provided. First, gates and source/drain regions of transistors are formed on a substrate. A photodiode doped region and a floating node doped region are formed in the substrate. Thereafter, a spacer stacked layer including a bottom layer, an inter-layer and a top... Agent:

20120108001 - Method for manufacturing solar cell: Disclosed are a relatively high-efficiency solar cell and a method for fabricating the same using a micro-heater array. The solar cell may include first and second micro-heaters intersecting each other or being parallel to each other on a substrate, and a plurality of InxGa1-xN p-n junction layers formed using the... Agent: Samsung Electronics Co., Ltd.

20120108002 - Apparatus, method and system for depositing layer of solar cell: The apparatus for thin film deposition for solar cells includes multiple unit chambers divided by a substrate as a boundary, a deposition gas injecting unit injecting deposition gases independently to each of the multiple unit chambers, and a decomposition unit in each of the multiple unit chambers to decompose the... Agent: Korea Institute Of Energy Research

20120108003 - Method for producing a solar cell: In various embodiments, a method for producing a solar cell is provided. In accordance with the method, through-holes may be formed in a solar cell substrate having the basic doping of a first conduction type. Furthermore, predetermined surface regions of a first surface of the solar cell substrate which include... Agent: Solarworld Innovations Gmbh

20120108004 - Photo-semiconductor device and method of manufacturing the same: A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of... Agent: Canon Kabushiki Kaisha

20120108005 - Method for forming ge-sb-te film and storage medium: A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after... Agent: Tokyo Electron Limited

20120108006 - Semiconductor device and method for manufacturing the same: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108007 - Semiconductor device and method for manufacturing the same: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108009 - Electrically conductive interconnect system and method: An electrically conductive interconnect system has a post, extending above a supporting surface, the post including a rigid material, a coating on the rigid material, wherein the post and has a first width at the supporting surface and a second width at a distance removed from the supporting surface, and... Agent:

20120108008 - Electrode connection structure of semiconductor chip, conductive member, and semiconductor device and method for manufacturing the same: An electrode connection structure of a semiconductor chip is provided to realize a highly reliable electrical connection with low stress without using a bump. A conductive member may be used for such an electrode connection structure. A semiconductor device is provided wherein semiconductor chips are arranged in layers without providing... Agent: National Institute Of Advanced Industrial Science And Technology

20120108010 - Stacked microelectronic devices and methods for manufacturing stacked microelectronic devices: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second... Agent: Micron Technology, Inc.

20120108012 - Film for semiconductor and semiconductor device manufacturing method: A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer... Agent:

20120108011 - Method of fabricating a semiconductor device with a back electrode: A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the... Agent: Sanyo Electric Co., Ltd.

20120108013 - Method for manufacturing semiconductor device: In QFN packages for vehicles which are required to have high reliability, the side surface of leads is mostly covered with lead-to-lead resin protrusions, which prevent smooth formation of solder fillets during reflow mounting. When the lead-to-lead protrusions are mechanically removed using a punching die, there is a high possibility... Agent: Renesas Electronics Corporation

20120108014 - Method for manufacturing semiconductor device: An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108015 - Underfill flow guide structures and method of using same: Underfill flow guide structures and methods of using the same are provided with a module. In particular the underfill flow guide structures are integrated with a substrate and are configured to prevent air entrapment from occurring during capillary underfill processes.... Agent: International Business Machines Corporation

20120108016 - Semiconductor device and manufacturing methods with using non-planar type of transistors: Static random access memory cells and methods of making static random access memory cells are provided. The static random access memory cells contain two non-planar pass-gate transistors, two non-planar pull-up transistors, two non-planar pull-down transistors. A portion of a fin of the non-planar pull-up transistor is electrically connected to a... Agent: Kabushiki Kaisha Toshiba

20120108017 - Threshold voltage adjustment through gate dielectric stack modification: Multiple types of gate stacks are formed on a doped semiconductor well. A high dielectric constant (high-k) gate dielectric is formed on the doped semiconductor well. A metal gate layer is formed in one device area, while the high-k gate dielectric is exposed in other device areas. Threshold voltage adjustment... Agent: International Business Machines Corporation

20120108018 - Method for manufacturing thin film transistor substrate: A method for manufacturing a thin film transistor substrate includes a step of forming a gate electrode (11a) and a first interconnect on a substrate (10), a step of forming a gate insulating film (12a) having a contact hole at a position overlapping the first interconnect, a step of forming... Agent: Sharp Kabushiki Kaisha

20120108019 - Method for fabricating a substrate provided with two active areas with different semiconductor materials: A layer of second semiconductor material is deposited on the layer of first semiconductor material of a substrate. Two active areas are then defined by means of selective elimination of the first and second semiconductor materials. One of the two active areas is then covered by a protective material. The... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120108020 - Low temperature coefficient resistor in cmos flow: A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.... Agent: Texas Instruments Incorporated

20120108021 - Pmos sige-last integration process: A process of forming a CMOS integrated circuit including integrating SiGe source/drains in the PMOS transistor after source/drain and LDD implants and anneals. A dual layer hard mask is formed on a polysilicon gate layer. The bottom layer prevents SiGe growth on the polysilicon gate. The top layer protects the... Agent: Texas Instruments Incorporated

20120108022 - Semiconductor device including a p-channel type mos transmitter: A method of manufacturing a semiconductor device including a stacked gate type nonvolatile memory cell and a p-channel type first transistor, includes: forming a gate insulating film of the first transistor on a semiconductor substrate; forming a tunnel insulating film of the stacked gate type nonvolatile memory cell on the... Agent: Fujitsu Semiconductor Limited

20120108023 - Method for manufacturing semiconductor device: A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.... Agent: Samsung Electronics Co., Ltd.

20120108024 - Field effect transistor having nanostructure channel: A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure.... Agent: International Business Machines Corporation

20120108025 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device which includes forming a gate insulating film and a gate electrode over a semiconductor substrate, forming a first recess in the first semiconductor substrate on both sides of the gate electrode by dry etching, forming a second recess by removing a bottom and... Agent: Fujitsu Semiconductor Limited

20120108026 - Method of manufacturing strained source/drain structures: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of an integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108027 - Improved silicide method: A process for forming an integrated circuit with reduced sidewall spacers to enable improved silicide formation between minimum spaced transistor gates. A process for forming an integrated circuit with reduced sidewall spacers by first forming sidewall spacer by etching a sidewall dielectric and stopping on an etch stop layer, implanting... Agent: Texas Instruments Incorporated

20120108028 - Methods of forming electrical components and memory cells: Some embodiments include methods of forming electrical components. First and second exposed surface configurations are formed over a first structure, and material is then formed across the surface configurations. The material is sub-divided amongst two or more domains, with a first of the domains being induced by the first surface... Agent:

20120108029 - Semiconductor device and method for manufacturing the same: It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108030 - Method for obtaining smooth, continuous silver film: A method for forming a semiconductor device including a resistive memory cell includes providing a substrate having an upper surface. A first conductive layer is formed over the upper surface of the substrate. An amorphous silicon layer is formed over the first conductive layer. A surface of the amorphous silicon... Agent: Crossbar, Inc.

20120108031 - Resistive random access memory and method for manufacturing the same: A resistive random access memory including, an insulating layer, a hard mask layer, a bottom electrode, a memory cell and a top electrode is provided. The insulating layer is disposed on the bottom electrode. The insulating layer has a contact hole having a first width. The hard mask layer has... Agent: Macronix International Co., Ltd.

20120108032 - Method for forming a semiconductor device with stressed trench isolation: A method for forming a semiconductor device with stressed trench isolation is provided, comprising: providing a silicon substrate (S11); forming at least two first trenches in parallel on the silicon substrate and forming a first dielectric layer which is under tensile stress in the first trenches (S12); forming at least... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120108033 - Method of manufacturing devices having vertical junction edge: Techniques for forming devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an oxide. Cavities may be formed in the oxide and filled with a conductive material, such a doped polysilicon. Vertical junctions are formed between the polysilicon and... Agent: Micron Technology, Inc.

20120108034 - Substrate structure having buried wiring and method for manufacturing the same, and semiconductor device and method for manufacturing the same using the substrate structure: Provided are a substrate structure which may solve problems generated in a manufacturing process while having a relatively low resistance buried wiring, a method for manufacturing the substrate structure, and a semiconductor device and a method for manufacturing the same using the substrate structure. The substrate structure may include a... Agent: Samsung Electronics Co., Ltd.

20120108035 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface... Agent:

20120108036 - Active region patterning in double patterning processes: A method includes forming an SRAM cell including a first and a second pull-up transistor and a first and a second pull-down transistor. The step of forming the SRAM cell includes forming a first and a second active region of the first and the second pull-up transistors using a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108037 - Methods of forming a phase change material: A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of at least one of nitrogen and oxygen than... Agent: Micron Technology, Inc.

20120108038 - Amorphous ge/te deposition process: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form... Agent: Advanced Technology Materials, Inc.

20120108039 - Etchant treatment processes for substrate surfaces and chamber surfaces: Embodiments of the invention generally relate to methods for treating a silicon-containing material on a substrate surface and performing a chamber clean process. In one embodiment, a method includes positioning a substrate containing a silicon material having a contaminant thereon within a process chamber and exposing the substrate to an... Agent:

20120108041 - Patterning of nanostructures: A technique for forming nanostructures including a definition of a charge pattern on a substrate and introduction of charged molecular scale sized building blocks (MSSBBs) to a region proximate the charge pattern so that the MSSBBs adhere to the charge pattern to form the feature.... Agent: Massachusetts Institute Of Technology

20120108040 - Vaporizing polymer spray deposition system: A vaporizing spray deposition device for forming a thin film includes a processing chamber, a fluid line, and a spray head coupled to the fluid line proximate the processing chamber. The fluid line is configured to transfer a polymer fluid and solvent mixture to the spray head. The spray head... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108042 - Methods of forming doped regions in semiconductor substrates: Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a... Agent: Micron Technology, Inc.

20120108044 - Isotopically-enriched boron-containing compounds, and methods of making and using same: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical... Agent: Advanced Technology Materials, Inc.

20120108043 - Pattern forming process: A resist pattern is formed by coating a first positive resist composition comprising a polymer comprising 20-100 mol % of aromatic group-containing recurring units and adapted to turn alkali soluble under the action of an acid onto a substrate to form a first resist film, coating a second positive resist... Agent: Shin-etsu Chemical Co., Ltd.

20120108045 - Method for radiation hardening a semiconductor device: Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include the one or more parasitic isolation devices and/or buried guard ring structures disclosed in the present application. The introduction... Agent:

20120108046 - Patterning methodology for uniformity control: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patternable layer over a substrate. The method includes forming a first layer over the patternable layer. The method includes forming a second layer over the first layer. The second layer is substantially thinner than... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120108047 - Methods of forming conductive contacts in the fabrication of integrated circuitry: A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is... Agent:

20120108048 - Three-dimensional semiconductor devices and methods of fabricating the same: A method of fabricating a three-dimensional semiconductor memory device includes providing a substrate which includes a cell array region and a peripheral region. The method further includes a peripheral structure on the peripheral region of the substrate, where the peripheral structure includes peripheral circuits and is configured to expose the... Agent: Samsung Electronics Co., Ltd.

20120108049 - Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same: There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120108050 - Work function engineering for edram mosfets: Embedded DRAM MOSFETs including an array NFET having a gate stack comprising a high-K dielectric layer upon which is deposited a first metal oxide layer (CD1) then a conductive layer (TiN), and then a polysilicon layer (Poly). A logic PFET having substantially the same gate stack as the array NFET,... Agent: International Business Machines Corporation

20120108051 - Different gate oxides thicknesses for different transistors in an integrated circuit: An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide... Agent:

20120108052 - Electronic apparatus containing lanthanide yttrium aluminum oxide: Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more monolayers. The lanthanide yttrium aluminum oxide film may be... Agent:

20120108053 - Apparatus, system, and method for wireless connection in integrated circuit packages: Some embodiments of the invention include a connecting structure between a support and at least one die attached to the support. The die includes a number of die bond pads on a surface of the die. The connecting structure includes a plurality of via and groove combinations. Conductive material is... Agent:

20120108054 - Dual damascene copper process using a selected mask: A method for creating a dual damascene structure while using only one lithography and masking step. Conventional dual damascene structures utilize two lithography steps: one to mask and expose the via, and a second step to mask and expose the trench interconnection. The novel method for creating a dual damascene... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120108055 - Manufacturing process of semiconductor device and semiconductor device: After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of... Agent: Renesas Electronics Corporation

20120108056 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: forming a plurality of photoresist patterns over a substrate structure; forming an insulation layer for a spacer over a structure including the photoresist patterns; forming a plurality of spacers on sidewalls of the photoresist patterns by anisotropically etching the insulation layer, and... Agent:

20120108057 - Method for fabricating semiconductor device with buried gates: A method for fabricating a semiconductor device includes forming first plugs over a substrate, forming contact holes that expose the first plugs, ion-implanting an anti-diffusion material into the first plugs, and forming second plugs filling the contact holes.... Agent:

20120108059 - Method of manufacturing semiconductor device: The method of manufacturing a semiconductor device according to the present invention includes: an insulating layer forming step of forming an insulating layer made of an insulating material containing Si and O; a groove forming step of forming a groove in the insulating layer; a metal film applying step of... Agent: Rohm Co., Ltd.

20120108058 - Methods of forming layers on substrates: Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the... Agent: Applied Materials, Inc.

20120108060 - Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method: In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.... Agent: Nec Electronics Corporation

20120108061 - Substrate processing apparatus and method of manufacturing a semiconductor device: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate... Agent: Hitachi Kokusai Electric, Inc

20120108062 - Nitrogen-containing ligands and their use in atomic layer deposition methods: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.... Agent: Applied Materials, Inc.

20120108063 - Beam dose computing method and writing method and record carrier body and writing apparatus: A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects... Agent: Nuflare Technology, Inc.

20120108064 - Polishing composition for silicon wafers: A polishing composition for a silicon wafer includes a macromolecular compound, an abrasive, and an aqueous medium. The macromolecular compound includes a constitutional unit (a1) represented by the following general formula (1), a constitutional unit (a2) represented by the following general formula (2), and a constitutional unit (a3) represented by... Agent:

20120108065 - Method for manufacturing polishing pad: A method for manufacturing a polishing pad, which may be laminated, with a small number of manufacturing steps, high productivity and no peeling between a polishing layer and a cushion layer includes preparing a cell-dispersed urethane composition by a mechanical foaming method; continuously discharging the cell-dispersed urethane composition onto a... Agent: Toyo Tire & Rubber Co., Ltd.

20120108066 - Pecvd showerhead configuration for cmp uniformity and improved stress: A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead.... Agent: Texas Instruments Incorporated

20120108067 - Edge bead remover for coatings: The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge... Agent:

20120108068 - Method for patterning sublithographic features: A method of uniformly shrinking hole and space geometries by forming sidewalls of an ALD film deposited at low temperature on a photolithographic pattern.... Agent: Texas Instruments Incorporated

20120108069 - Methods of forming an integrated circuit with self-aligned trench formation: Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set of trenches. Methods taught herein can be used as a pitch doubling technique, and may therefore enhance device integration. Further, employing a very thin CMP stop... Agent: Micron Technology, Inc.

20120108070 - Method for forming semiconductor device: A method for forming a semiconductor device is disclosed. A method for forming a semiconductor device includes forming a first hard mask layer over a semiconductor substrate including a cell region and a peripheral circuit region, forming a spacer pattern over the first hard mask layer of the cell region,... Agent: Hynix Semiconductor Inc.

20120108071 - Resist underlayer film composition and patterning process using the same: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula... Agent: Shin-etsu Chemical Co., Ltd.

20120108072 - Showerhead configurations for plasma reactors: Apparatus, devices, and methods for increasing the ion energy in a plasma processing devices are provided. In various embodiments, the surface area of a showerhead facing the work piece includes a plurality of features. The plurality of features increases the surface area of the showerhead relative to a flat surface.... Agent:

20120108073 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes forming a plurality of patterns, forming an etch target layer to gap-fill the plurality of patterns, forming an impurity region in the etch target layer, and performing an etch-back process on the etch target layer using the impurity region as an etch... Agent:

20120108074 - Method for treating a semiconductor wafer: applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.... Agent: Lam Research Ag

20120108075 - Gas-phase functionalization of surfaces of microelectronic structures: There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce... Agent: President And Fellows Of Harvard College

20120108076 - Showerhead for cvd depositions: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled... Agent: Texas Instruments Incorporated

20120108077 - Substrate processing apparatus and semiconductor device manufacturing method: Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a... Agent: Hitachi Kokusai Electric Inc.

20120108078 - Semiconductor device and method for manufacturing the same: It is made possible to provide a semiconductor device and a method for manufacturing the semiconductor device that have the highest possible permittivity and can be produced at low production costs. A method for manufacturing a semiconductor device, includes: forming an amorphous film containing (HfzZr1−z)xSi1−xO2−y (0.81≦x≦0.99, 0.04≦y≦0.25, 0≦z≦1) on a... Agent: Kabushiki Kalsha Toshiba

20120108079 - Atomic layer deposition film with tunable refractive index and absorption coefficient and methods of making: Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to... Agent: Applied Materials, Inc.

20120108081 - Apparatus having improved substrate temperature uniformity using direct heating methods: Embodiments of the present invention generally relate to an apparatus and methods for uniformly heating substrates in a processing chamber. In one embodiment, an apparatus generally includes a substrate supporting structure that is able to help minimize the temperature variation across each of the substrates during thermal processing. In one... Agent: Applied Materials, Inc.

20120108080 - Substrate processing apparatus and method of manufacturing a semiconductor device: A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the... Agent: Hitachi Kokusai Electric Inc.