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Semiconductor device manufacturing: process February patent applications/inventions, industry category 02/12

20120045852 - Autotuned screen printing process: Embodiments of the invention generally provide apparatus and methods of screen printing a pattern on a substrate. In one embodiment, a patterned layer is printed onto a surface of a substrate along with a plurality of alignment marks. The locations of the alignment marks are measured with respect to a... Agent: Applied Materials, Inc.

20120045853 - Ser testing for an ic chip using hot underfill: A method for detecting soft errors in an integrated circuit (IC) due to transient-particle emission, the IC comprising at least one chip and a substrate includes mixing an epoxy with a radioactive source to form a hot underfill (HUF); underfilling the chip with the HUF; sealing the underfilled chip; measuring... Agent: International Business Machines Corporation

20120045854 - Inspecting method, template manufacturing method, semiconductor integrated circuit manufacturing method, and inspecting system: According to one embodiment, a template for manufacturing a memory cell array comprising a relievable area and a redundant area replaceable with the relievable area is to be inspected. First, based on a defect position of a defect-detected template and position information on a relievable area, a decision is made... Agent:

20120045855 - Position-sensitive metrology system: A metrology system for analyzing a semiconductor device on a substrate can include a metrology sensor.... Agent:

20120045856 - Method of manufacturing organic el device: According to one embodiment, a method of manufacturing an organic EL device is disclosed. The method can arrange an adhesive agent of an ultraviolet curable type between a first substrate on which a plurality of light emitting parts are formed in a predetermined direction and a second substrate arranged to... Agent: Toshiba Mobile Display Co., Ltd.

20120045858 - Contact for a semiconductor light emitting device: A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material... Agent: Koninklijke Philips Electronics N.v.

20120045857 - Method for manufacturing light emitting device: A method for manufacturing light emitting device is revealed. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on... Agent: Formosa Epitaxy Incorporation

20120045859 - Color filterless display device, optical element, and manufacture: A method of forming liquid crystal cell for a color display device includes forming a liquid crystal layer and a prism structure between top and bottom substrates. Forming the prism structure includes forming a lens shaped die, coating a low refractive index resin on the lens shaped die, pasting the... Agent: International Business Machines Corporation

20120045860 - Liquid crystal display device and manufacturing method thereof, and electronic device: An objective is simplification of a manufacturing method of a liquid crystal display device or the like. In a manufacturing method of a thin film transistor, a stack in which a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120045861 - Method for manufacturing semiconductor device: An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120045862 - Co-deposition methods for the fabrication of organic optoelectronic devices: A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.... Agent: University Of Southern California

20120045863 - Microplasma generator and methods therefor: A low-temperature, atmospheric-pressure microplasma generator comprises at least one strip of metal on a dielectric substrate. A first end of the strip is connected to a ground plane and the second end of the strip is adjacent to a grounded electrode, with a gap being defined between the second end... Agent:

20120045864 - Multilayer film formation method and film deposition apparatus used with the method: A multilayer film formation method and film deposition apparatus that suppress fluctuations in thickness, stabilize product quality, and reduce costs. The method employs gas-phase chemical reaction to form a multilayer film having at least three layers using raw material gases of differing compositions. A film formation apparatus is provided having... Agent: Fuji Electric Co., Ltd.

20120045865 - Doped graphene films with reduced sheet resistance: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron... Agent: International Business Machines Corporation

20120045866 - Method of forming an electronic device using a separation technique: A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a semiconductor layer and the patterned layer from the substrate, wherein the semiconductor layer is a portion of the substrate.... Agent: Astrowatt, Inc.

20120045867 - Anti-reflective photovoltaic module: An anti-reflective surface on a photovoltaic can reduce optical reflection.... Agent:

20120045868 - Semiconductor device contacts: A method of fabrication of electrical contact structures on a semiconductor material is described comprising the steps of: depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material; and reducing the oxide via a chemical electroless process to produce a... Agent: Durham Scientific Crystals Limited

20120045869 - Flip chip bonder head for forming a uniform fillet: A low thermal conductivity material layer covers a peripheral portion of the bottom surface of the conductive plate of a chip bonder head. The center portion of the conductive plate is exposed or covered with another conductive plate laterally surrounded by the low thermal conductivity material layer. During bonding, the... Agent: International Business Machines Corporation

20120045870 - Method of manufacturing leadless integrated circuit packages having electrically routed contacts: A method of manufacturing a leadless integrated circuit (IC) package comprising an IC chip mounted on a metal leadframe and a plurality of electrical contacts electrically coupled to the IC chip. The IC chip, the electrical contacts, and a portion of the metal leadframe are covered with an encapsulation compound,... Agent:

20120045871 - Method of manufacturing semiconductor package: Provided are a semiconductor package of a semiconductor chip, a semiconductor module, an electronic system, and methods of manufacturing the same. The method includes mounting a semiconductor chip on a package substrate, forming a molding member on the semiconductor chip, forming via holes penetrating the molding member to expose a... Agent: Samsung Electronics Co., Ltd

20120045872 - Semiconductor memory device: Disclosed herein is a semiconductor memory device for reducing a junction resistance and increasing amount of current throughout the unit cell. A semiconductor memory device comprises plural unit cells, each coupled to contacts formed in different shape at both sides of a word line in a cell array.... Agent: Hynix Semiconductor Inc.

20120045873 - Methods of forming cmos transistors using tensile stress layers and hydrogen plasma treatment: Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source... Agent:

20120045874 - Cmos integration method for optimal io transistor vt: Various embodiments provide methods for fabricating dual supply voltage CMOS devices with a desired I/O transistor threshold voltage. The dual supply voltage CMOS devices can be fabricated in a semiconductor substrate that includes isolated regions for a logic NMOS transistor, a logic PMOS transistor, an I/O NMOS transistor, and an... Agent:

20120045875 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes: forming first to third gate electrodes in first to third regions, respectively; forming a first mask pattern covering the second region while exposing the first and third regions; forming p-type source drain extensions and p-type pocket regions by ion implantation using the... Agent: Fujitsu Semiconductor Limited

20120045876 - Method for manufacturing a semiconductor device: There is provided a technology capable of preventing the increase in threshold voltages of n channel type MISFETs and p channel type MISFETs in a semiconductor device including CMISFETs having high dielectric constant gate insulation films and metal gate electrodes. When a rare earth element or aluminum is introduced into... Agent: Renesas Electronics Corporation

20120045877 - Fabrication method of power semiconductor structure with reduced gate impedance: A fabrication method of a power semiconductor structure with reduced gate impedance is provided. Firstly, a polysilicon gate is formed in a substrate. Then, dopants are implanted into the substrate with the substrate being partially shielded by the polysilicon gate. Afterward, an isolation layer is formed to cover the polysilicon... Agent:

20120045878 - Manufacture of semiconductor device with stress structure: A method for manufacturing a semiconductor device includes the steps of (a) forming a gate electrode on a silicon substrate, through a gate insulating film; (b) forming a lamination of an insulating film and a sacrificial film having different etching characteristics on the silicon substrate, covering the gate electrode, and... Agent: Fujitsu Semiconductor Limited

20120045879 - Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure: Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents an elongate monocrystalline nanostructure-based TFET with a heterostructure made of a different semiconducting... Agent: Imec

20120045880 - Metal gate transistor and method for fabricating the same: A method for fabricating metal gate transistor is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a transistor region defined thereon; forming a gate insulating layer on the substrate; forming a stacked film on the gate insulating layer, wherein the stacked film comprises at... Agent:

20120045881 - Method for fabricating an integrated-passives device with a mim capacitor and a high-accuracy resistor on top: The present invention relates to a method for fabricating an electronic component, comprising fabricating, on a substrate (102) at least one integrated MIM capacitor (114) having a top capacitor electrode (118) and a bottom capacitor electrode (112) at a smaller distance from the substrate than the top capacitor electrode; fabricating... Agent: Nxp B.v.

20120045882 - Semiconductor device manufacturing method: A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent... Agent: Kabushiki Kaisha Toshiba

20120045883 - Method for manufacturing soi substrate: An SOI substrate is manufactured by the following method. An insulating layer is formed on a semiconductor substrate; an embrittled region is formed in the semiconductor substrate on which the insulating layer is formed by irradiating the semiconductor substrate with ions; a base substrate is heated to reduce moisture content... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120045884 - Protective thin films for use during fabrication of semiconductors, mems, and microstructures: A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at... Agent:

20120045885 - Method for making nanowire element: A method for making a nanowire element includes: providing an imprint mold including a first substrate and a conductive pattern-transferring layer, the pattern-transferring layer includes first conductive strips; electrifying the pattern-transferring layer with an alternating current; applying a nanowire-containing suspension on the pattern-transferring layer; reorienting the nanowires in the nanowire-containing... Agent: Hon Hai Precision Industry Co., Ltd.

20120045886 - Methods for infusing one or more materials into nano-voids of nanoporous or nanostructured materials: A method of forming composite nanostructures using one or more nanomaterials. The method provides a nanostructure material having a surface region and one or more nano void regions within a first thickness in the surface region. The method subjects the surface region of the nanostructure material with a fluid. An... Agent: Stion Corporation

20120045887 - Compositions of doped, co-doped and tri-doped semiconductor materials: Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion... Agent: Washington State University Research Foundation

20120045888 - Multilayer low reflectivity hard mask and process therefor: A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and... Agent:

20120045889 - Integrating a first contact structure in a gate last process: A method is provided that includes providing a substrate; forming a transistor in the substrate, the transistor having a dummy gate; forming a dielectric layer over the substrate and transistor; forming a contact feature in the dielectric layer; and after forming the contact feature, replacing the dummy gate of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120045890 - Methods of forming non-volatile memory devices including dummy word lines: A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string on the active region. The first memory cell string may include a first plurality of word lines crossing... Agent:

20120045891 - Methods of forming patterns, and methods of forming integrated circuits: Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to... Agent: Micron Technology, Inc.

20120045892 - Method for fabricating semiconductor device: A gate insulating film is formed on a semiconductor substrate having a first region in which a first conductivity type transistor is formed and a second region in which a second conductivity type transistor is formed. Next, a metal film and a first metal nitride film are sequentially formed on... Agent: Panasonic Corporation

20120045893 - Method of making interconnect structure: One or more embodiments relate to a method of forming a semiconductor device having a substrate, comprising: providing a Si-containing layer; forming a barrier layer over the Si-containing layer, the barrier layer comprising a compound including a metallic element; forming a metallic nucleation_seed layer over the Si-containing layer, the nucleation_seed... Agent:

20120045894 - Method for manufacturing display device: When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120045895 - Semiconductor package having through electrodes that reduce leakage current and method for manufacturing the same: A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely... Agent: Hynix Semiconductor Inc.

20120045896 - Methods of forming openings and methods of patterning a material: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features,... Agent:

20120045897 - Wafer electroless plating system and associated methods: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an... Agent: Lam Research Corporation

20120045898 - Ru cap metal post cleaning method and cleaning chemical: According to certain embodiments, Ru is removed from the surface of a semiconductor structure by contact with a cleaning solution comprising one or more selected from permanganate ion, orthoperiodic ion and hypochlorous ion, such that Ru is removed from surfaces of the semiconductor substrate where the presence of Ru is... Agent: Toshiba America Electronic Components, Inc.

20120045899 - Pattern reversal film forming composition and method of forming reversed pattern: There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of... Agent: Nissan Chemical Industries, Ltd.

20120045900 - Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative: The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having... Agent: Shin-etsu Chemical Co., Ltd.

20120045901 - Method of forming a pattern structure for a semiconductor device: In a method of forming a pattern structure, a cut-off portion of the node-separated line of a semiconductor device is formed by a double patterning process by using a connection portion of the sacrificial mask pattern and the mask pattern to thereby improve alignment margin. The alignment margin between the... Agent:

20120045902 - Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses: Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication... Agent: Lam Research Corporation

20120045903 - Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus: Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein... Agent: Hitachi Kokusai Electric Inc.

20120045905 - Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source... Agent:

20120045904 - Methods for forming a hydrogen free silicon containing dielectric film: Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting... Agent: Applied Materials, Inc.

20120040477 - Ai epoxy adjustment: A method and apparatus for dispensing a volume of die attach adhesive onto a surface can include an optical system which images the dispensed volume of die attach adhesive. A two-dimensional area covered by the die attach adhesive and a die attach dispense pressure can be used as a comparison... Agent:

20120040478 - Organic el display panel and method of manufacturing the same: An organic electroluminescence display panel includes a thin-film transistor layer above a substrate. A planarizing film is above the thin-film transistor layer with contact holes being formed in the planarizing film. A bank is above the planarizing film. The bank includes openings arranged in rows and columns that define regions... Agent: Panasonic Corporation

20120040480 - Light emitting device and the manufacture method thereof: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed... Agent:

20120040479 - Light emitting element, a light emitting device, a method of manufacturing a light emitting element and a method of manufacturing a light emitting device: The present invention provides a light-emitting element, a method of manufacturing the light-emitting element, a light-emitting device, and a method of manufacturing the light-emitting device. A method of manufacturing a light-emitting element includes: forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive... Agent:

20120040481 - Method of manufacturing transflective liquid crystal display panel: A method of manufacturing a transflective liquid crystal display panel includes the following steps. A substrate is provided. A first patterned conductive layer is formed on the substrate to form a gate electrode and a reflective electrode. A first insulating layer is formed on the first patterned conductive layer and... Agent:

20120040482 - Light-emitting device: To provide a long lifetime light-emitting element, in particular, to provide a long lifetime white light-emitting element, and to provide a light-emitting element having high luminous efficiency, in particular, to provide a white light-emitting element having high luminous efficiency. In a light-emitting element having, between an anode and a cathode,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120040483 - Copper blend i-vii compound semiconductor light-emitting devices: Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.... Agent: University Of Seoul Industry Cooperation Foundation

20120040484 - Method for producing a semiconductor element: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.... Agent: Osram Opto Semiconductors Gmbh

20120040485 - Thermal management of film deposition processes: Thermal management of film deposition processes. In one aspect, a deposition system includes a vacuum chamber defining an evacuated interior volume, a deposition source disposed within the interior volume, a substrate holder disposed within the interior volume and arranged to hold a substrate with a first surface of the substrate... Agent:

20120040486 - Method and apparatus for irradiating a photovoltaic material surface by laser energy: A method for manufacturing TF-PV material by providing a TF-PV material layer having a degree of crystallinity, and irradiating a surface region of the TF-PV material layer using a laser source having irradiation parameter selected such that the degree of crystallinity is increased at least at a top layer of... Agent: Excico Group - Rch (research Campus Hasselt)

20120040487 - Mwt architecture for thin si solar cells: Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise:... Agent: Crystal Solar, Inc.

20120040488 - Method of forming photovoltaic modules: A method of forming a PV module includes forming conductors on a top surface of a PV coated substrate; forming insulators on the top surface of the PV coated substrate; and cutting the PV coated substrate to form a plurality of individual PV cells. The PV coated substrate is cut... Agent: Preco, Inc.

20120040489 - Method, apparatus and system of manufacturing solar cell: A method of manufacturing a crystalline silicon solar cell includes steps of preparing a crystalline silicon substrate, texturing the substrate using plasma to form uneven patterns for increasing light absorption, doping ions in the substrate using plasma to form a doping layer for a PN junction, heating the substrate to... Agent: Jusung Engineering Co., Ltd.

20120040490 - Enhanced vision system for screen printing pattern alignment: Embodiments of the invention also generally provide a solar cell formation process that includes the formation of metal contacts over heavly doped regions that are formed in a desired pattern on a surface of a substrate. Embodiments of the invention also provide an inspection system and supporting hardware that is... Agent: Applied Materials Italia S.r.l.

20120040491 - Method for joining a film onto a substrate: A method for joining a film onto a substrate comprises: a step (A) of floating the film on an interface between an aqueous liquid and a water-insoluble liquid; a step (B) of immersing the substrate into the aqueous liquid; a step (C) of stacking the substrate onto said one surface... Agent: Panasonic Corporation

20120040492 - Plasma deposition of amorphous semiconductors at microwave frequencies: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers... Agent:

20120040493 - Plasma deposition of amorphous semiconductors at microwave frequencies: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave... Agent:

20120040494 - Process for producing photovoltaic device: A process for producing a photovoltaic device having high photovoltaic conversion efficiency by suppressing light absorption in the visible light short wavelength region. The process for producing a photovoltaic device (100) comprises a step of forming a substrate-side transparent electrode layer (2) on a substrate (1), a step of forming... Agent: Mitsubishi Heavy Industries, Ltd.

20120040495 - Manufacturing method of semiconductor device: A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120040496 - Programmable resistive memory cell with oxide layer: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.... Agent: Seagate Technology LLC

20120040497 - Panelized backside processing for thin semiconductors: A semiconductor manufacturing method includes attaching a first die to a substrate panel. The method also includes applying a mold compound after attaching the first die to the substrate panel to the first die and the substrate panel. The method further includes thinning the first die and the mold compound... Agent: Qualcomm Incorporated

20120040498 - Semiconductor device package and method of fabricating the same: A semiconductor device package includes a semiconductor chip including a conductive pad, a die pad on which the semiconductor chip is mounted and having a first thickness, a lead pattern including a first portion disposed adjacent to the edge of the die pad and having the first thickness and a... Agent: Samsung Electronics Co., Ltd

20120040499 - Method for manufacturing semiconductor package, method for encapsulating semiconductor, and solvent-borne semiconductor encapsulating epoxy resin composition: Disclosed is a novel method for manufacturing a semiconductor package, which can suppress the formation of voids in an encapsulating resin. Specifically disclosed is a method for manufacturing a semiconductor package, which comprises: (1) a step wherein a first member, which is selected from a group consisting of semiconductor chips... Agent: Nagase Chemtex Corporation

20120040500 - Semiconductor molding chamber: A system and method for a semiconductor molding chamber is disclosed. An embodiment comprises a top molding portion and a bottom molding portion that form a cavity between them into which a semiconductor wafer is placed. The semiconductor molding chamber has a first set of vacuum tubes which hold and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120040501 - Method of fabricating a semiconductor device: There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120040502 - Manufacture of semiconductor device with stress structure: A method for manufacturing a semiconductor device includes the steps of (a) forming a gate electrode on a silicon substrate, through a gate insulating film; (b) forming a lamination of an insulating film and a sacrificial film having different etching characteristics on the silicon substrate, covering the gate electrode, and... Agent: Fujitsu Semiconductor Limited

20120040503 - Fabrication method of integrating power transistor and schottky diode on a monolithic substrate: A fabrication method of integrating a power transistor and a schottky diode on a monolithic substrate is provided. Firstly, a substrate of a first conductive type is provided. Then, at least a polysilicon gate and a second polysilicon structure are formed on the substrate. At least a portion of the... Agent: Great Power Semiconductor Corp.

20120040504 - Method for integrating dram and nvm: The present invention discloses a method for integrating DRAM and NVM, which comprises steps: sequentially forming on a portion of surface of a DRAM semiconductor substrate a first gate insulation layer and a first gate layer functioning as a floating gate; and implanting ion into regions of the semiconductor substrate,... Agent: Yield Microelectronics Corp.

20120040505 - Method and device including transistor component having a field electrode: A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor... Agent: Infineon Technologies Austria Ag

20120040506 - Method for forming semiconductor device: A method for manufacturing a semiconductor device includes forming a transistor having a stacked structure in a peripheral circuit region to increase net die and forming a metal silicide layer over a source/drain region of a transistor formed over an upper layer to reduce a contact resistance. The semiconductor device... Agent: Hynix Semiconductor Inc.

20120040507 - Methods of forming a plurality of capacitors: A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward... Agent:

20120040508 - Method of forming semiconductor device having self-aligned plug: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the... Agent: Samsung Electronics Co., Ltd.

20120040509 - Techniques for placement of active and passive devices within a chip: A method for manufacturing a semiconductor device includes fabricating an active layer on a first side of a semiconductor substrate. The method also includes fabricating a metal layer on a second side of the semiconductor substrate. The metal layer includes a passive device embedded within the metal layer. The passive... Agent: Qualcomm Incorporated

20120040510 - Dicing before grinding process for preparation of semiconductor: A method for preparing a semiconductor wafer into individual semiconductor dies using both a dicing before grinding operation and a wafer back side adhesive coating includes the step of applying a water or organic solvent soluble material into the partially cut/etched dicing lines and over the top surface of the... Agent:

20120040511 - Alxinyga1-x-yn mixture crystal substrate, method of growing same and method of producing same: Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and... Agent: Sumitomo Electric Industries, Ltd.

20120040514 - Chemical vapor deposition with elevated temperature gas injection: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an... Agent: Veeco Instruments Inc.

20120040516 - Method and device for depositing semiconductor film on substrate using close-spaced sublimation process: A method and device for depositing a semiconductor film. The method includes: a) carrying a semiconductor material by a carrier gas to a crucible installed in a vacuum deposition chamber via a passage; and b) heating the crucible to sublimate the semiconductor material to be vapor and depositing the vapor... Agent:

20120040512 - Method to form nanopore array: A method of forming nanopore is provided that includes forming a first structure on a substrate, and forming a second structure overlying the first structure. An intersecting portion of the first and the second structures is etched to provide an opening of nanopore dimensions. The substrate may be etched with... Agent: International Business Machines Corporation

20120040517 - Methods for forming isolated fin structures on bulk semiconductor material: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on... Agent: Globalfoundries Inc.

20120040513 - Plasma deposition of amorphous semiconductors at microwave frequencies: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits passing therethrough that carry deposition species.... Agent:

20120040515 - Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to... Agent:

20120040518 - Plasma deposition of amorphous semiconductors at microwave frequencies: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave... Agent:

20120040519 - Method for forming silicon film having microcrystal structure: A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the... Agent: Bureau Of Energy, Ministry Of Economic Affairs

20120040520 - Ultra-fine-grained polysilicon thin film vapour-deposition method: Provided is a method of depositing an ultra-fine grain polysilicon thin film. The method includes forming a nitrogen atmosphere in a chamber loaded with a substrate, and supplying a source gas into the chamber to deposit a polysilicon thin film on the substrate, in which the source gas includes a... Agent:

20120040521 - Voltage sustaining layer wiht opposite-doped island for seminconductor power devices: A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n (or p)-layer containing a plurality of floating p (or n)-islands. The effect of the floating islands is to absorb a large part of the electric flux when... Agent: Third Dimension (3d) Semiconductor, Inc.

20120040522 - Method for integrating multiple threshold voltage devices for cmos: A method to achieve multiple threshold voltage (Vt) devices on the same semiconductor chip is disclosed. The method provides different threshold voltage devices using threshold voltage adjusting materials and a subsequent drive in anneal instead of directly doping the channel. As such, the method of the present disclosure avoids short... Agent: International Business Machines Corporation

20120040523 - Bundle of long thin carbon structures, manufacturing method therefor, and electronic device: In the bundle of long thin carbon structures of the present invention, end parts of the bundle are interconnected in a carbon network. The interconnected end parts form a flat surface. By this, an electrical connection structure with low resistance and/or a thermal connection structure with high thermal conductivity are... Agent: Fujitsu Limited

20120040524 - Process for making conductive post with footing profile: A process for making a copper post with footing profile employs dual photoresist films of different photosensitivities and thicknesses on an under-bump-metallurgy (UBM) layer. After an exposure lithography process, a first opening with a substantially vertical sidewall is formed in a first photoresist film, and a second opening with a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120040525 - Method for forming interconnection levels of an integrated circuit: A method for forming interconnection levels of an integrated circuit, including the steps of: (a) forming an interconnection level including conductive tracks and vias separated by a porous dielectric material; (b) forming, on the interconnection level, a layer of a non-porous insulating material, said layer comprising openings above portions of... Agent: Stmicroelectronics Crolles 2 Sas

20120040526 - Semiconductor device manufacturing method: A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second... Agent: Kabushiki Kaisha Toshiba

20120040527 - Method of forming metal lines of semiconductor device: A method of forming metal lines of a semiconductor device includes forming an etch stop layer over a semiconductor substrate over which underlying structures are formed, forming an insulating layer over the etch stop layer, etching the etch stop layer and the insulating layer to form trenches through which the... Agent:

20120040530 - Methods for forming all tungsten contacts and lines: Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion... Agent:

20120040528 - Methods for patterning microelectronic devices using two sacrificial layers: A lower layer of a microelectronic device may be patterned by forming a first sacrificial layer on the lower layer; patterning a plurality of spaced apart trenches in the first sacrificial layer; forming a second sacrificial layer in the plurality of spaced apart trenches; patterning the second sacrificial layer in... Agent: Samsung Electronics Co., Ltd.

20120040529 - Resist stripping compositions and methods for manufacturing electrical devices: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a... Agent: Basf Se

20120040531 - Method to fabricate thin metal via interconnects on copper wires in mram devices: A scheme for forming a thin metal interconnect is disclosed that minimizes etch residues and provides a wet clean treatment for via openings. A single layer interlayer dielectric (ILD), BARC, and photoresist layer are successively formed on a substrate having a copper layer that is coplanar with a dielectric layer.... Agent: Magic Technologies, Inc.

20120040532 - Pad and method for chemical mechanical polishing: A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed... Agent: Macronix International Co., Ltd.

20120040533 - Method of manufacturing semiconductor devices: A method of manufacturing semiconductor devices comprises forming a plurality of patterns by patterning a thin film formed over an underlying layer and cleaning contaminants generated when the thin film is patterned using a plasma both having oxidative and reductive properties.... Agent: Hynix Semiconductor Inc.

20120040534 - Gap processing: Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf... Agent: Micron Technology, Inc.

20120040535 - Semiconductor process: A semiconductor process of the present invention is described as follows. A substrate is provided, and a material layer is deposited on the substrate using an organic precursor as a reactant gas. A plasma treatment is conducted immediately after depositing the material layer, wherein plasma is continuously supplied during depositing... Agent: United Microelectronics Corp.

20120040536 - A-si seasoning effect to improve sin run-to-run uniformity: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing... Agent: Applied Materials, Inc.

20120034712 - Semiconductor device and method of manufacturing the same: A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film... Agent: Fujitsu Semiconductor Limited

20120034713 - Process, voltage, temperature sensor: An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor... Agent: Skyworks Solutions, Inc.

20120034715 - Methods of fabricating a light-emitting device: Methods of fabricating of a light-emitting device are provided, the methods include forming a plurality of light-emitting units on a substrate, measuring light characteristics of the plurality of light-emitting units, respectively, depositing a phosphor layer on the plurality of light-emitting units using a printing method, and cutting the substrate to... Agent:

20120034714 - Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second... Agent: Indutrial Technology Research Institute

20120034717 - Light emitting diode for harsh environments: A light emitting diode for harsh environments includes a substantially transparent substrate, a semiconductor layer deposited on a bottom surface of the substrate, several bonding pads, coupled to the semiconductor layer, formed on the bottom surface of the substrate, and a micro post, formed on each bonding pad, for electrically... Agent: Sensors For Medicine Science, Inc.

20120034716 - Method for manufacturing light emitting diode: A method for manufacturing a light emitting diode includes steps: providing a base having leads formed thereon; fixing a light emitting die on the leads; disposing a glass encapsulant on the base; co-firing the encapsulant with the base to fix them together. The base is made of silicon or ceramic.... Agent: Advanced Optoelectronic Technology, Inc.

20120034718 - Vertical deep ultraviolet light emitting diodes: A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped AlXInYGa1-X-YN. A first doped layer is on the strain relieved superlattice layer AlXInYGa1-X-YN and the first doped layer has a first conductivity. A multilayer quantum well is on the first doped layer comprising... Agent: Nitek, Inc.

20120034719 - Method of fabricating a pixel array substrate: A method of fabricating a pixel array substrate is disclosed. The reflective pixel array substrate can be made by utilizing five photo masks only. The reflective pixel array substrate includes a substrate, a thin film transistor, a reflective electrode, an insulating layer and numerous protruding bumps. The step between the... Agent:

20120034720 - Vertical cavity surface emitting laser and method of manufacturing the same: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR... Agent: Sony Corporation

20120034721 - Semi-transmissive-type liquid crystal display device and method for manufacturing same: A semi-transmissive-type liquid crystal display device is provided which is capable of preventing an electric erosion reaction between a reflective film made of Al (aluminum) or an Al alloy and a transparent electrode film made of ITO or a like (Indium Tin Oxide) and of inhibiting occurrence of a flicker... Agent: Nec Lcd Technologies, Ltd.

20120034723 - Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof: A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed... Agent: Sony Corporation

20120034722 - Manufacturing method for a thin film transistor-liquid crystal display: A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel... Agent:

20120034724 - Method and apparatus for mems oscillator: A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. The resonator structure is coupled to the CMOS... Agent: Miradia Inc.

20120034725 - Method for texturing silicon wafers, treatment liquid therefor, and use: In a method for the treatment of silicon wafers in the production of solar cells, a treatment liquid is applied to the surface of the silicon wafers for the purpose of texturization thereof. The treatment liquid contains, as additive, ethyl hexanol or cyclohexanol in an amount ranging from 0.5% to... Agent: Gebr. Schmid Gmbh

20120034726 - Buffer layer deposition for thin-film solar cells: Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated... Agent: Global Solar Energy, Inc.

20120034727 - Multilayered photovoltaic device on envelope surface: A method of producing a dye solar cell photovoltaic device. The method comprises the steps of providing a transparent envelope, with at least a portion of the envelope having a curved profile; and forming a dye solar cell voltaic element by depositing a plurality of layers of film on an... Agent: Dyesol Industries Pty Ltd

20120034728 - Linear semiconductor substrate, and device, device array and module, using the same: The linear semiconductor substrate 1 or 2 of the present invention comprises at least one desired thin film 4 formed on a linear substrate 3 having a length ten or more times greater than a width, thickness, or diameter of the linear substrate itself. Adopting semiconductor as the thin film... Agent: Furukawa Electric Co, Ltd.

20120034729 - Manufacturing method for light-sensing structure: A manufacturing method for manufacturing a light-sensing structure is provided. The manufacturing method includes the steps as follows. (a) A circuit layer is formed on an upper surface of a first substrate, wherein the first substrate includes at least one light-sensing device and the circuit layer includes at least one... Agent: Memsor Corporation

20120034730 - Backside illuminated sensor processing: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120034731 - Photoelectric conversion device manufacturing system and photoelectric conversion device manufacturing method: A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequentially layered on a transparent-electroconductive film formed on a substrate in the photoelectric conversion device. The... Agent: Ulvac, Inc.

20120034732 - Method of optimizing the band edge positions of the conduction band and the valence band of a semiconductor material for use in photoactive devices: The present invention relates to a semiconductor compound having the general formula AxB1-xCy, to a method of optimizing positions of a conduction band and a valence band of a semiconductor material using said semiconductor compound, and to a photoactive device comprising said semiconductor compound.... Agent: Sony Deutschland Gmbh

20120034733 - System and method for fabricating thin-film photovoltaic devices: Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone,... Agent: Aventa Technologies LLC

20120034734 - System and method for fabricating thin-film photovoltaic devices: Described are embodiments of methods for depositing a copper indium gallium diselenide (CIGS) film on a substrate, such as a web substrate or a discrete substrate. In various embodiments, an incremental layer of indium is deposited followed by deposition of a top incremental layer of copper gallium to create a... Agent: Aventa Technologies LLC

20120034735 - Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns: Example embodiments herein relate to compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantities of both the electroconductive polymer and the photoacid generator. Also disclosed... Agent:

20120034736 - Thin-film transistors: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.... Agent: Xerox Corporation

20120034737 - Diamond semiconductor element and process for producing the same: A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and... Agent: Nippon Telegraph And Telephone Corporation

20120034738 - Semiconductor package and method of attaching semiconductor dies to substrates: A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to... Agent: United Test And Assembly Center, Ltd.

20120034739 - Chip capacitive coupling: A method of creating a semiconductor chip having a substrate, a doped semiconductor material abutting the substrate and a device pad at an outer side of the doped semiconductor material involves creating a via through at least a portion of the substrate, the via having a periphery and a bottom... Agent:

20120034740 - Pre-encapsulated cavity interposer: Methods of forming pre-encapsulated frames comprise flowing a dielectric encapsulation material around at least one conductive trace. A cavity configured to receive at least one semiconductor device at least partially in the cavity is formed in the encapsulation material. A first connection area of the at least one trace is... Agent: Micron Technology, Inc.

20120034741 - Power device package comprising metal tab die attach paddle (dap) and method of fabricating the package: A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead... Agent: Fairchild Korea Semiconductor Co., Ltd.

20120034742 - Semiconductor device: To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a... Agent: Renesas Electronics Corporation

20120034743 - Manufacturing method of semiconductor device: A semiconductor device in which a defect is suppressed and miniaturization is achieved is provided. An insulating film is formed over a flat surface; a first mask is formed over the insulating film; a second mask is formed by performing a slimming process on the first mask; an insulating layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120034744 - Method for manufacturing semiconductor device: A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of a source region or a drain region is larger than that of a channel formation region is formed. A semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120034745 - Method for fabricating semiconductor devices with reduced junction diffusion: A transistor which includes halo regions disposed in a substrate adjacent to opposing sides of the gate. The halo regions have upper and lower regions. The upper region is a crystalline region with excess vacancies and the lower region is an amorphous region. Source/drain diffusion regions are disposed in the... Agent: Globalfoundries Singapore Pte. Ltd.

20120034747 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device is described. A polysilicon layer is formed on a substrate. The polysilicon layer is doped with an N-type dopant. A portion of the polysilicon layer is then removed to form a plurality of dummy patterns. Each dummy pattern has a top, a bottom,... Agent: United Microelectronics Corp.

20120034748 - Method of fabricating transistor for semiconductor device: A method of fabricating a transistor in a semiconductor device includes forming a gate structure over a substrate, forming a first trench by etching the substrate on either side of the gate structure to a first depth, ion-implanting dopants of a first conductivity type to form a source/drain region in... Agent:

20120034746 - Methods of fabricating mos transistors having recesses with elevated source/drain regions: Methods of fabricating metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions are provided. The MOS transistors formed by these methods may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided... Agent:

20120034749 - Method for manufacturing a strained semiconductor device: A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide... Agent: Samsung Electronics Co., Ltd.

20120034750 - Method for fabricating semiconductor device and plasma doping apparatus: After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).... Agent:

20120034751 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes forming a flash memory cell in a first region, forming a first electrode of a capacitor in a second region, forming a first silicon oxide film, a silicon nitride film, and a second silicon oxide film in this order as a second... Agent: Fujitsu Semiconductor Limited

20120034752 - Methods of forming a gate structure and methods of manufacturing a semiconductor device using the same: In a method of forming a gate structure, a gate pattern including a gate insulation layer pattern and a gate electrode sequentially stacked on a substrate is formed. The gate electrode includes a metal. A first plasma process is performed on the gate pattern using a reaction gas to reduce... Agent: Samsung Electronics Co., Ltd

20120034753 - Methods of forming a plurality of capacitors: A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive... Agent: Micron Technology, Inc.

20120034754 - Semiconductor device manufacaturing method and silicon oxide film forming method: A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon... Agent: Kabushiki Kaisha Toshiba

20120034755 - Method and manufacture for high voltage gate oxide formation after shallow trench isolation formation: A method and manufacture for fabrication of flash memory is provided. In fabricating the periphery region of the flash memory, the low voltage gate oxides and high voltage gate oxides are grown to the same height as each other prior to STI etching. After STI etching and gap fill, the... Agent: Spansion LLC

20120034756 - Method of forming a deep trench isolation structure using a planarized hard mask: A number of deep trench openings are formed in a semiconductor wafer to have substantially equal depths and no oxide undercut by forming a number of shallow trench openings, forming a mask structure in the shallow trench openings where the mask structure has a substantially planar top surface, forming a... Agent:

20120034757 - Methods of fabricating semiconductor devices having various isolation regions: A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the... Agent: Samsung Electronics Co., Ltd.

20120034758 - Method for manufacturing semiconductor substrate: A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120034759 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor... Agent: Canon Kabushiki Kaisha

20120034760 - Metallization for chip scale packages in wafer level packaging: In one embodiment, a method for forming the semiconductor device includes forming a first trench from a front side of a substrate. The substrate has a front side and an opposite back side, and the first trench having sidewalls and a bottom surface. A insulator layer is formed over the... Agent:

20120034761 - Method of removing contaminants and native oxides from a substrate surface: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form... Agent: Applied Materials, Inc.

20120034762 - Method for selective deposition of a semiconductor material: A method is disclosed comprising providing a substrate comprising an insulating material and a second semiconductor material and pre-treating the substrate with a plasma produced from a gas selected from the group consisting of a carbon-containing gas, a halogen-containing gas, and a carbon-and-halogen containing gas. The method further comprises depositing... Agent: Imec

20120034763 - Method of manufacturing nitride semiconductor substrate: The present invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S10... Agent: Sumitomo Electric Industries, Ltd.

20120034764 - System and method for fabricating thin-film photovoltaic devices: Described are an apparatus and a method for depositing a thin film on a web. The method includes depositing a first layer of a composite metal onto a web. A first selenium layer is deposited onto the first layer and the web is heated to selenize the first layer. Subsequently,... Agent: Aventa Technologies LLC

20120034765 - Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor: An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120034766 - Method for manufacturing a semiconductor device: A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120034767 - Method of making a multicomponent film: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium... Agent: Air Products And Chemicals, Inc.

20120034768 - Method of manufacturing semiconductor wafer: A method of manufacturing a semiconductor wafer, which includes: a semiconductor substrate made of silicon and having both a central area and an outer periphery area; and a compound semiconductor layer made of a nitride-based semiconductor and formed on the semiconductor substrate, the method comprising: forming a growth inhibition layer... Agent: Sanken Electric Co., Ltd.

20120034769 - Low temperature microwave activation of heavy body implants: Semiconductor devices and methods for making such devices are described. The semiconductor devices contain dopant regions that have been formed by low temperature, microwave activation of implanted dopants. In some configurations, the low temperature microwave activation can be used to control the final location of the implant, with or without... Agent:

20120034770 - Liquid crystal display device and method of fabricating the same: A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the... Agent:

20120034771 - Bond pad for low k dielectric materials and method for manufacture for semiconductor devices: A method for manufacturing a semiconductor device having improved contact structure includes providing a semiconductor substrate, forming a plurality of gate structures formed on a portion of the substrate, forming an interlayer dielectric layer overlying the gate structures, and forming a first copper interconnect layer overlying the substantially flat surface... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120034772 - Nonvolatile semiconductor memory device having multi-layered oxide/(oxy) nitride film as inter-electrode insulating film and manufacturing method thereof: A nonvolatile semiconductor memory device includes a first insulator, first conductor, element isolation insulator, second insulator and second conductor. The first insulator is formed on the main surface of a substrate and the first conductor is formed on the first insulator. The element isolation insulator is filled into at least... Agent: Kabushiki Kaisha Toshiba

20120034773 - Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor: In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included... Agent:

20120034774 - Energy conditioning circuit arrangement for integrated circuit: The present invention relates to an interposer substrate for interconnecting between active electronic componentry such as but not limited to a single or multiple integrated circuit chips in either a single or a combination and elements that could comprise of a mounting substrate, substrate module, a printed circuit board, integrated... Agent:

20120034775 - Method for forming a patterned thick metallization atop a power semiconductor chip: A method is disclosed for forming a patterned thick metallization atop a semiconductor chip wafer. The method includes fabricating a nearly complete semiconductor chip wafer ready for metallization; depositing a bottom metal layer of sub-thickness TK1 together with its built-in alignment mark using a hot metal process; depositing a top... Agent:

20120034776 - Device of filling metal in through-via-hole of semiconductor wafer and method using the same: A device of filling metal in a through-via-hole formed in a semiconductor wafer and a method of filling metal in a through-via-hole using the same are disclosed. A device of filling metal in a through-via-hole formed in a semiconductor wafer includes a jig base comprising a jig configured to fix... Agent:

20120034777 - Through hole vias at saw streets including protrusions or recesses for interconnection: A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die.... Agent: Stats Chippac, Ltd.

20120034779 - Apparatus for manufacturing a semiconductor device: In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within... Agent:

20120034778 - Double patterning strategy for contact hole and trench in photolithography: A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120034780 - Method for fabricating a semiconductor device: A method for forming a semiconductor device. A substrate having thereon at least one small pattern and at least one large pattern is provided. A sacrificial layer is deposited to cover the small pattern and the large pattern. A chemical mechanical polishing is performed to planarize the sacrificial layer. The... Agent:

20120034783 - Manufacturing integrated circuit components having multiple gate oxidations: STI divot formation is minimized and STI field height mismatch between different regions is eliminated. A nitride cover layer (150) having a thickness less than 150 then a oxide cover layer (160) having a thickness less than 150 is deposited acting as implant buffer after pad oxide removal following the... Agent:

20120034781 - Method for fabricating a semiconductor structure: A method for fabricating a semiconductor structure is disclosed. The method includes the steps of: providing a substrate; depositing a material layer on the substrate; forming at least one dielectric layer on the material layer; forming a patterned resist on the dielectric layer; performing a first trimming process on at... Agent:

20120034782 - Method of forming fine patterns: A method of forming fine patterns according to an aspect of the present disclosure comprises stacking a hard mask layer and a first auxiliary layer over an underlying layer, removing regions of the first auxiliary layer, thereby forming first auxiliary patterns to expose regions of the hard mask layer, filling... Agent: Hynix Semiconductor Inc.

20120034784 - Methods of forming fine patterns in semiconductor devices: Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The... Agent:

20120034785 - Semiconductor device manufacturing method: According to one embodiment, a semiconductor device manufacturing method includes collectively etching layers of a multilayered film including silicon layers and silicon oxide films alternately stacked on a semiconductor substrate. The etching gas of the etching contains at least two types of group-VII elements and one of a group-III element,... Agent:

20120034786 - Plasma processing chamber with dual axial gas injection and exhaust: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in... Agent: Lam Research Corporation

20120034787 - Defect etching of germanium: The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able... Agent: Interuniversitair Microelektronica Centrum Vzw (imec)

20120034789 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes: performing modifying a surface of a semiconductor wafer including a silanol group on the surface with an alkylsilyl group; and fluorinating an alkyl group of the alkylsilyl group with which the surface was modified.... Agent: Kabushiki Kaisha Toshiba

20120034788 - Substrate processing apparatus and producing method of semiconductor device: A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA... Agent:

20120034790 - Method of producing semiconductor device: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step... Agent:

20120034791 - Method of flattening a recess in a substrate and fabricating a semiconductor structure: A recess is usually formed on the sidewall of the trench due to the dry etch. The recess may influence the profile of an element formed in the trench. Therefore, a method of flattening a recess in a substrate is provided. The method includes: first, providing a substrate having a... Agent:

20120034792 - Coating treatment method: The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a... Agent: Tokyo Electron Limited

20120034793 - Method for forming metal nitride film: A wafer serving as a target substrate to be processed is loaded into a chamber, and an inside of the chamber is maintained under a vacuum level. Then, a TiN film is formed on the wafer by alternately supplying TiCl4 gas and MMH gas into the chamber while heating the... Agent: Tokyo Electron Limited

20120034794 - Enhancing the width of polycrystalline grains with mask: A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to... Agent: The Trustees Of Columiba University In The City Of New York

20120028373 - Bi-layer hard mask for the patterning and etching of nanometer size mram devices: A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper... Agent: Magic Technologies, Inc.

20120028374 - Semiconductor device and method for manufacturing same: A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18),... Agent: Fujitsu Semiconductor Limited

20120028375 - Inspection method of light-emitting device and processing method after inspection of light-emitting device: The present invention relates to a method for inspecting a light-emitting device, the method including performing a light emission test of (A) a light-emitting device including a lead frame having mounted and packaged thereon a plurality of light-emitting elements or (B) a light-emitting device obtained by resin encapsulating and packaging... Agent: Nitto Denko Corporation

20120028376 - Method of controlling critical dimensions of trenches in a metallization system of a semiconductor device during etch of an etch stop layer: When forming metal lines and vias in complex metallization systems of semiconductor devices, an additional control mechanism for adjusting the final critical dimension may be implemented in the last etch process for etching through the etch stop layer after having patterned the low-k dielectric material. To this end, the concentration... Agent: Globalfoundries Inc.

20120028377 - Using optical metrology for within wafer feed forward process control: A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences... Agent:

20120028378 - Method for forming pattern and a semiconductor device: According to one embodiment, a pattern forming method comprises transferring a pattern formed in a surface of a template to a plurality of chip areas in a semiconductor substrate under different transfer conditions. Furthermore, the transferring the pattern formed in the surface of the template to the plurality of chip... Agent:

20120028379 - Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the... Agent: Lam Research Corporation

20120028380 - Dicing tape-integrated film for semiconductor back surface and method for producing the film, and method for producing semiconductor device: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material having an asperities-formed surface, and a pressure-sensitive adhesive layer laminated on the base material, and a film for semiconductor back surface laminated on the pressure-sensitive adhesive layer of... Agent: Nitto Denko Corporation

20120028382 - Semiconductor device having a semiconductor chip, and method for the production thereof: A semiconductor device having a semiconductor chip having an active surface with flip-chip contacts and a passive surface is disclosed. In one embodiment, the flip-chip contacts are surrounded by an electrically insulating layer as underfill material, the layer having a UV B-stageable material. The UV B-stageable material is applied on... Agent: Infineon Technologies Ag

20120028381 - Solar battery panel inspection apparatus, method of inspecting solar battery panel, and method of manufacturing solar battery panel: A solar battery panel inspection apparatus is an apparatus for inspecting a solar battery panel including a transparent insulating substrate having a main surface, and a transparent electrode layer, a semiconductor photoelectric conversion layer and a back electrode layer which are sequentially stacked and having an outer circumferential insulating region... Agent:

20120028384 - Method for manufacturing a liquid-ejection head: A method for manufacturing a liquid-ejection head having a plurality of nozzles arranged to eject liquid includes: preparing a substrate having a first layer, a second layer, and a third layer stacked in this order, the second layer more resistant than the third layer to etching by an etching method... Agent: Canon Kabushiki Kaisha

20120028383 - Processing method of silicon substrate and liquid ejection head manufacturing method: A processing method of a silicon substrate including forming a second opening in a bottom portion of a first opening using a patterning mask having a pattern opening by plasma reactive ion etching. The reactive ion etching is performed with a shield structure formed in or on the silicon substrate,... Agent: Canon Kabushiki Kaisha

20120028387 - Dual panel type organic electroluminescent display device and method fabricating the same: An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching element and the driving element, the planarization layer having a substantially flat top surface; a cathode on the planarization layer, the... Agent:

20120028385 - Manufacturing method of thin film transistor substrate of liquid crystal display panel: A manufacturing method of thin film transistor substrate of a liquid crystal display panel includes following steps. A substrate is provided. Then, a transparent conducting layer and an opaque conducting layer are formed on the substrate. Thereafter, the transparent conducting layer and the opaque conducting layer are patterned by a... Agent:

20120028386 - Method of manufacturing organic light emitting display: A method of manufacturing an organic light-emitting display device, the method including forming a thin film transistor (TFT); forming a planarization layer on the TFT; forming an opening in the planarization layer; and forming an organic light emitting diode that is electrically connected to the TFT through the opening, wherein... Agent:

20120028388 - Method for producing light-emitting diode device: A method for producing a light-emitting diode device includes a step of preparing a sealing layer by sealing in a light-emitting diode with a sealing material; a step of preparing a fluorescent layer by allowing a phosphor-containing resin composition containing phosphor and silicone resin to reach its B-stage; and a... Agent: Nitto Denko Corporation

20120028392 - Electrophoretic display device and method of fabricating the same: A method of fabricating an electrophoretic display device includes forming a gate line along a direction, a gate electrode extending from the gate line, a common line parallel to the gate line, and a first storage electrode extending from the common line on a substrate, forming a gate insulating layer... Agent:

20120028389 - Method for manufacturing display device: A method of manufacturing a display device is disclosed. In one embodiment, the method includes: i) forming a semiconductor layer where a plurality of crystallized areas and a plurality of noncrystallized areas are alternately arranged on a substrate, ii) aligning the substrate based on a difference in contrast ratio between... Agent: Samsung Mobile Display Co., Ltd.

20120028391 - Method of fabricating display device: To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120028390 - Thin film deposition apparatus and method of manufacturing organic light-emitting display device with the same: A thin film deposition apparatus that may prevent a patterning slit sheet from sagging and increase a tensile force of the patterning slit sheet, and a method of manufacturing an organic light-emitting display device using the same.... Agent:

20120028394 - Image sensor and method for fabricating same: An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode.... Agent: Crosstek Capital, LLC

20120028393 - Vapor deposition apparatus and process for continuous deposition of a doped thin film layer on a substrate: An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube.... Agent: Primestar Solar, Inc.

20120028395 - Vapor deposition process for continuous deposition and treatment of a thin film layer on a substrate: An integrated apparatus is provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate and subsequent vapor treatment. The apparatus can include a load vacuum chamber, a first vapor deposition chamber; and a second vapor deposition chamber that are integrally connected such... Agent: Primestar Solar, Inc.

20120028396 - Method of manufacturing a silicon-based semiconductor device by essentially electrical means: Proposed is the method for forming selective emitters, field-induced emitters, back-surface field regions, and contacts to the functional regions of a solar cell by essentially electrical means and without conventional thermal diffusion and masking processes. The process includes forming conductive layers on both sides of an intermediate solar-cell structure, performing... Agent: Alexander Shkolnik

20120028397 - Ultra-thin quad flat no-lead (qfn) package: An ultra-thin Quad Flat No-Lead (QFN) semiconductor chip package having a leadframe with lead terminals formed by recesses from both the top and bottom surfaces and substantially aligned contact areas formed on either the top or bottom surfaces. A die is electrically connected to the plurality of lead terminals and... Agent: Stmicroelectronics Asia Pacific Pte Ltd.

20120028399 - Laser processing for high-efficiency thin crystalline silicon solar cell fabrication: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These... Agent: Solexel, Inc.

20120028398 - Systems and methods for charging solar cell layers: Systems and methods of the present invention can be used to charge a charge-holding layer (such as a passivation layer and/or antireflective layer) of a solar cell with a positive or negative charge as desired. The charge-holding layer(s) of such a cell can include any suitable dielectric material capable of... Agent:

20120028400 - Ccd sensors with multiple contact patterns: A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can... Agent:

20120028401 - Methods for manufacturing arrays for cmos imagers: Methods of fabricating complementary metal-oxide-semiconductor (CMOS) imagers for backside illumination are disclosed. In one embodiment, the method may include forming at a front side of a substrate a plurality of high aspect ratio trenches having a predetermined trench depth, and forming at the front side of the substrate a plurality... Agent: Imec

20120028402 - Ccd sensors with multiple contact patterns: A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can... Agent:

20120028403 - Ccd sensors with multiple contact patterns: A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can... Agent:

20120028404 - Methods of temporally varying the laser intensity during scribing a photovoltaic device: Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to... Agent: Primestar Solar, Inc.

20120028405 - Method and material for processing iron disilicide for photovoltaic application: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to... Agent: Stion Corporation

20120028406 - Hybrid photovoltaic cells and related methods: Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-absorbing material and as the heterojunctions at which excited electron-hole pairs split.... Agent:

20120028407 - Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making: Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer and a second layer,... Agent: Primestar Solar, Inc.

20120028408 - Distributor heater: A vapor distributor assembly may include a carbon fiber heating element.... Agent:

20120028409 - Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices: Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film... Agent: Primestar Solar, Inc.

20120028410 - Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same: A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a... Agent: Micron Technology, Inc.

20120028411 - Embedded wafer-level bonding approaches: A method includes providing a carrier with an adhesive layer disposed thereon; and providing a die including a first surface, a second surface opposite the first surface. The die further includes a plurality of bond pads adjacent the second surface; and a dielectric layer over the plurality of bond pads.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028413 - Method for manufacturing ball grid array package stacking system: A method for manufacturing a ball grid array package stacking system includes: providing a base substrate; coupling an integrated circuit to the base substrate; coupling a stacking substrate over the base substrate; mounting a heat spreader, having an access port, around the base substrate and the stacking substrate; and coupling... Agent:

20120028412 - Semiconductor apparatus, method of manufacturing the same, and method of manufacturing semiconductor package: A semiconductor apparatus having a through electrode, a semiconductor package, and a method of manufacturing the semiconductor package are provided. The method of includes preparing a substrate including a buried via, the buried via having a first surface at a first end, and the buried via extending from a first... Agent:

20120028414 - Method of manufacturing semiconductor chip: A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the... Agent: Canon Kabushiki Kaisha

20120028415 - Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device: The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive... Agent: Nitto Denko Corporation

20120028416 - Film for flip chip type semiconductor back surface and its use: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated... Agent: Nitto Denko Corporation

20120028417 - Semiconductor component with cell structure and method for producing the same: A semiconductor component comprises a semiconductor body comprising a first component electrode arranged on one of the surfaces of the semiconductor body, a second component electrode arranged on one of the surfaces of the semiconductor body, and a component control electrode arranged on one of the surfaces of the semiconductor... Agent: Infineon Technologies Austria Ag

20120028418 - Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive... Agent: Nitto Denko Corporation

20120028419 - Semiconductor device and manufacturing method thereof: There is provided a low-cost semiconductor device that commercial and quality-assured (inspected) chip size packages can be stacked and has a small co-planarity value and a high mounting reliability. A semiconductor device in which a flexible circuit substrate is adhered to at least a part of a lateral side of... Agent:

20120028420 - Method for reuse of wafers for growth of vertically-aligned wire arrays: Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.... Agent: The California Institute Of Technology

20120028421 - Method for manufacturing thin film transistor array panel: A method for manufacturing a thin film transistor array panel includes forming a gate line; forming an insulating layer on the gate line; forming first and second silicon layers first and second metal layers; forming a photoresist pattern having first and second portions; forming first and second metal patterns by... Agent: Samsung Electronics Co., Ltd.

20120028422 - Thin film transistor formed on flexible substrate and method of manufacturing the same: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate... Agent: Samsung Electronics Co., Ltd.

20120028423 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: forming a channel layer; forming an electron supply layer on the channel layer; forming a cap layer made of gallium nitride on the electron supply layer; and performing an oxygen plasma treatment to an upper surface of the cap layer at a... Agent: Sumitomo Electric Industries, Ltd.

20120028424 - Manufacture method of a split gate nonvolatile memory cell: A split gate nonvolatile memory cell is provided with a first diffusion region, a second diffusion region, and a channel region formed between the first and second diffusion regions, including a first channel region having a predetermined dopant concentration. The first channel region is positioned apart from the first and... Agent: Renesas Electronics Corporation

20120028426 - Inverted-trench grounded-source fet structure using conductive substrates, with highly doped substrates: This invention discloses an inverted field-effect-transistor (iT-FET) semiconductor device that includes a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate. The semiconductor power device further comprises a trench-sidewall gate placed on sidewalls at a lower portion of a vertical trench surrounded by... Agent: Alpha And Omega Semiconductor Incorporated

20120028425 - Methods for fabricating trench metal oxide semiconductor field effect transistors: A trench metal oxide semiconductor field effect transistor (MOSFET) can be fabricated in an upward direction. A trench bottom doping (TBD) process and/or a trench bottom oxide (TBO) process can be performed after formation of a substrate and a first epitaxial (epi) layer. Poly seal can be performed after the... Agent:

20120028427 - Split gate with different gate materials and work functions to reduce gate resistance of ultra high density mosfet: This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the semiconductor substrate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of... Agent:

20120028428 - Vertical type semiconductor device and method of manufacturing a vertical type semiconductor device: A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active... Agent:

20120028429 - Method of forming a non-volatile electron storage memory and the resulting device: The invention provides a method of forming an electron memory storage device and the resulting device. The device comprises a gate structure which, in form, comprises a first gate insulating layer formed over a semiconductor substrate, a self-forming electron trapping layer of noble metal nano-crystals formed over the first gate... Agent:

20120028430 - Method and structure to improve formation of silicide: A method begins with a structure having: a gate insulator on a silicon substrate between a gate conductor and a channel region within the substrate; insulating sidewall spacers on sidewalls of the gate conductor; and source and drain regions within the substrate adjacent the channel region. To silicide the gate... Agent: International Business Machines Corporation

20120028431 - Method for manufacturing a semiconductor device using a nitrogen containing oxide layer: The present invention provides a method for forming a semiconductor device, as well as a semiconductor device. The method for manufacturing a semiconductor device, among others, includes providing a gate structure (240) over a substrate (210), the gate structure (240) including a gate electrode (248) located over a nitrided gate... Agent: Texas Instruments Incorporated

20120028432 - Methods of forming a bipolar transistor: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.... Agent: Analog Devices, Inc.

20120028433 - Method for manufacturing solid electrolytic capacitor: A dielectric layer is formed in the surface of an anode body which is composed of a sintered body, a semiconductor layer composed of an electrically-conductive polymer is formed on the dielectric layer, and then an electric conductor layer is formed on the semiconductor layer with an electrically-conductive paste which... Agent: Showa Denko K.k.

20120028434 - Method of manufacturing semiconductor device using acid diffusion: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of... Agent:

20120028435 - Semiconductor device including dummy gate part and method of fabricating the same: In a reliable semiconductor device and a method of fabricating the semiconductor device, a difference in height between upper surfaces of a cell region and a peripheral region (also referred to as a level difference) is minimized by optimizing dummy gate parts. The semiconductor device includes a semiconductor substrate including... Agent: Samsung Electronics Co., Ltd.

20120028436 - Method for fabrication of a semiconductor device and structure: A method of manufacturing a semiconductor wafer, the method including: providing a base wafer including a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of the metal layers, wherein the monocrystalline layer includes second alignment marks; and performing a lithography using at least one... Agent: Monolithic 3d Inc.

20120028437 - Trench-filling method and film-forming system: A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor... Agent: Tokyo Electron Limited

20120028438 - Method for separating a layer system comprising a wafer: m

20120028440 - method of fabricating a multilayer structure with circuit layer transfer: A method of producing a composite structure comprises a step of producing a first layer of microcomponents on one face of a first substrate, the first substrate being held flush against a holding surface of a first support during production of the microcomponents, and a step of bonding the face... Agent: S.o.i.tec Silicon On Insulator Technologies

20120028441 - Method and system for bonding 3d semiconductor device: A method and system and for fabricating 3D (three-dimensional) SIC (stacked integrated chip) semiconductor devices. The system includes a vacuum chamber, a vacuum-environment treatment chamber, and a bonding chamber, though in some embodiments the same physical enclosure may serve more than one of these functions. A vacuum-environment treatment source in... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028439 - Semiconductor and solar wafers and method for processing same: A method for manufacturing a silicon-on-insulator structure including a substrate wafer, an active wafer, and an oxide layer between the substrate wafer and the active wafer. The method includes the steps of heat treating the structure, trapezoid grinding edges of the wafer, and grinding a surface of the wafer.... Agent: Memc Electronic Materials, Inc.

20120028443 - Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial... Agent:

20120028442 - Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device: The present invention relates to a thermally releasable sheet-integrated film for semiconductor back surface, which includes: a pressure-sensitive adhesive sheet including a base material layer and a pressure-sensitive adhesive layer, and a film for semiconductor back surface formed on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet, in which... Agent: Nitto Denko Corporation

20120028444 - Defect-free hetero-epitaxy of lattice mismatched semiconductors: A method includes providing a semiconductor substrate formed of a first semiconductor material; and forming a plurality of insulation regions over at least a portion of the semiconductor substrate, with a plurality of trenches separating the plurality of insulation regions apart from each other. A first epitaxial growth is performed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028448 - Group iii-nitride layers with patterned surfaces: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or... Agent:

20120028446 - Method for fabricating group iii-nitride semiconductor: A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned... Agent:

20120028447 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate... Agent: Sumitomo Electric Industries, Ltd.

20120028445 - Susceptor treatment method and a method for treating a semiconductor manufacturing apparatus: A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and... Agent:

20120028449 - Method and installation for producing an anti- reflection and/or passivation coating for semiconductor devices: A method of producing an anti-reflection and/or passivation coating for semiconductor devices is provided. The method includes: providing a semiconductor device precursor 30 having a surface to be provided with the anti-reflection and/or passivation coating; treating the surface with ions; and depositing a hydrogen containing anti-reflection and/or passivation coating onto... Agent:

20120028450 - Vertical-type semiconductor devices and methods of manufacturing the same: In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall... Agent: Samsung Electronics Co., Ltd.

20120028451 - Shaped nanocrystal particles and methods for making the same: Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal... Agent:

20120028452 - Method for manufacturing silicon carbide semiconductor device: Provided is a method for manufacturing a silicon carbide semiconductor device, in order to obtain a smooth surface of silicon carbide while maintaining a high impurity activation rate, which includes a step of implanting an impurity into a surface layer of a silicon carbide substrate, a step of forming a... Agent: Showa Denko K.k.

20120028453 - Method for manufacturing silicon carbide semiconductor device: An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device... Agent: Mitsubishi Electric Corporation

20120028454 - Plasma activated conformal dielectric film deposition: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption... Agent:

20120028455 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer;... Agent: Renesas Electronics Corporation

20120028456 - Electrode stucture, semiconductor element, and methods of manufacturing the same: According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a... Agent: Renesas Electronics Corporation

20120028457 - Metal layer end-cut flow: A method of patterning a metal layer is disclosed. The method includes providing a substrate and forming a material layer over the substrate. The method includes forming a second material layer over the first material layer. The method includes performing a first patterning process to the second material layer to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028458 - Alpha particle blocking wire structure and method fabricating same: An alpha particle blocking structure and method of making the structure. The structure includes: a semiconductor substrate; a set of interlevel dielectric layers stacked from a lowermost interlevel dielectric layer closest to the substrate to a uppermost interlevel dielectric layer furthest from the substrate, each interlevel dielectric layer of the... Agent:

20120028459 - Manufacturing process of circuit substrate: A manufacturing process of a circuit substrate is provided. A conductive structure including a first patterned conductive layer, a first dielectric layer, a second dielectric layer, a first conductive layer, and a second conductive layer is provided. The first dielectric layer and the second dielectric layer are respectively disposed on... Agent: Advanced Semiconductor Engineering, Inc.

20120028460 - Semiconductor device and method of fabricating the same: A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a... Agent: Kabushiki Kaisha Toshiba

20120028463 - Manufacturing method of semiconductor apparatus and semiconductor apparatus: A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening... Agent: Kabushiki Kaisha Toshiba

20120028462 - Method for forming cu film and storage medium: In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state... Agent: Tokyo Electron Limited

20120028461 - Methods for depositing metal in high aspect ratio features: Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering... Agent: Applied Materials, Inc.

20120028464 - Apparatus and method for conformal mask manufacturing: A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle... Agent: Nexgen Semi Holding, Inc.

20120028465 - Process to form via hole in semiconductor wafer: A process to form a via hole in a semiconductor wafer is disclosed. The process includes steps of, preparing a metal mask and etching the wafer by the metal mask as the etching mask. The preparation of the metal mask includes steps of: coating a nega-resist on the back surface... Agent: Sumitomo Electric Device Innovations, Inc.

20120028466 - Method for chemical mechanical planarization of a tungsten-containing substrate: The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.... Agent: Dupont Air Products Nanomaterials, LLC

20120028467 - Polishing fluid and polishing method: e

20120028470 - Increasing robustness of a dual stress liner approach in a semiconductor device by applying a wet chemistry: In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material... Agent: Globalfoundries Inc.

20120028468 - Method of forming a layer on a semiconductor substrate having a plurality of trenches: A method of fabricating a semiconductor device is illustrated. A substrate having a plurality of trenches is provided. The plurality of trenches include trenches having differing widths. A first layer is formed on the substrate including in the plurality of trenches. Forming the first layer creates an indentation in the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028471 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall... Agent: Tokyo Electron Limited

20120028469 - Method of tailoring conformality of si-containing film: A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the... Agent: Asm Japan K.k.

20120028472 - Method of controlling critical dimensions of vias in a metallization system of a semiconductor device during silicon-arc etch: When forming via openings in sophisticated semiconductor devices, a silicon-containing anti-reflective coating (ARC) layer may be efficiently used for adjusting the critical dimension of the via openings by using a two-step etch process in which, in at least one of the process steps, the flow rate of a reactive gas... Agent: Globalfoundries Inc.

20120028473 - Method of reducing delamination in the fabrication of small-pitch devices: A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask layer; patterning the second hard mask layer to form a hard mask; and, after the step of patterning... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028474 - Method of growing electrical conductors: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby... Agent: Asm International N.v.

20120028475 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm2.... Agent: Sumitomo Electric Device Innovations, Inc.

20120028476 - Method of forming semiconductor structures with contact holes: Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes;... Agent: International Business Machines Corporation

20120028477 - Self-assembly pattern for semiconductor integrated circuit: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120028478 - Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film... Agent: President And Fellows Of Harvard College