|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: process October categorized by USPTO classification 10/11Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 10/27/2011 > 90 patent applications in 71 patent subcategories. categorized by USPTO classification
20110263050 - Low power rf tuning using optical and non-reflected power methods: Aspects of the present invention include methods for controlling a plasma in a substrate processing system. One embodiment provides controlling a first set of wavelength intensities of reflected electromagnetic radiation reflected from the plasma within a chamber before processing a first set of one or more substrates, associating the first... Agent:
20110263049 - Wafer edge inspection: Wafer edge inspection approaches are disclosed wherein an imaging device captures at least one image of an edge of a wafer. The at least one image can be analyzed in order to identify an edge bead removal line. An illumination system having a diffuser can further be used in capturing... Agent: Rudolph Technologies, Inc.
20110263051 - Interleaf for leadframe identification: A method of making an IC device includes providing a stack of leadframe sheets each including a plurality of leadframes and an interleaf member interposed between adjacent ones of the leadframe sheets. The interleaf members include indicia that identifies the leadframes sheets. The stack of leadframe sheets is loaded onto... Agent: Texas Instruments Incorporated
20110263052 - Method of removing contaminations: A method of removing contaminations includes providing a wafer, performing an inspection or a measuring step to the wafer, and performing a baking step to re-vaporize and remove contaminations from the wafer after the inspection or measuring step.... Agent:
20110263053 - Method for manufacturing pixel structure: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line.... Agent: Au Optronics Corporation
20110263054 - Bond pad isolation and current confinement in an led using ion implantation: An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to increase its resistivity to minimize current flow therethrough. In another embodiment, a plurality of... Agent: Varian Semiconductor Equipment Associates, Inc.
20110263055 - In-plane switching mode liquid crystal display device: An in-plane switching mode liquid crystal display device includes first and second substrates facing each other, a gate line and a data line arranged on the first substrate crossing each other and defining a pixel region, a switching device at a crossing of the gate line and the data line,... Agent:
20110263056 - Method of manufacturing a laser diode with improved light-emitting characteristics: The method of the invention is intended for manufacturing a laser diode with improved light-emitting characteristics. The method consists of providing certain components of a laser diode such as a wide-aperture lasing medium that has an active emitting layer with a first end and a second end, a DPH-mode reorganizer... Agent: Nano-optic Devices, LLC
20110263057 - Active array substrate, liquid crystal display panel, and manufacturing method thereof: An active array substrate, liquid crystal display panel, and manufacturing method thereof are provided. The active array substrate includes a base, a plurality of scan lines disposed on the base, a plurality of data lines perpendicular to the scan lines, a plurality of pixel electrodes, a plurality of active devices,... Agent: Au Optronics Corp.
20110263058 - Method of manufacturing semiconductor light emitting element: A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming... Agent: Panasonic Electric Works Co., Ltd.
20110263059 - Light-emitting device, liquid-crystal display device and method for manufacturing same: The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of. Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263060 - Method for manufacturing thin film transistor and method for manufacturing display device: An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking film, a base film, a... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263061 - Semiconductor light emitting device having patterned substrate and manufacturing method of the same: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate,... Agent: Samsung Led Co., Ltd.
20110263062 - Highly luminescent color-selective nanocrystalline materials: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.... Agent: Massachusetts Institute Of Technology
20110263063 - Seal configuration for a system for continuous deposition of a thin film layer on a substrate: An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt... Agent: Primestar Solar, Inc.
20110263065 - Modular system for high-rate deposition of thin film layers on photovoltaic module substrates: A system and related method for deposition of multiple thin film layers on photovoltaic (PV) module substrates includes a first processing side wherein the substrates are conveyed in a first direction for deposition of a first thin film layer on the substrates. A second processing side is operably disposed relative... Agent: Primestar Solar, Inc.
20110263064 - Zinc oxide film method and structure for cigs cell: A method for fabricating a thin film photovoltaic device. The method includes providing a substrate comprising an absorber layer and an overlying window layer. The substrate is loaded into a chamber and subjected to a vacuum environment. The vacuum environment is at a pressure ranging from 0.1 Torr to about... Agent: Stion Corporation
20110263067 - Methods of forming a concentrating photovoltaic module: Solar cell modules for converting solar energy into electrical energy. The modules includes a housing formed from three separate members that are attached together to form an interior space. A top member extends across an open side of the housing and includes one or more lenses. One or more solar... Agent: Emcore Solar Power, Inc.
20110263066 - Patterned glass cylindrical lens arrays for concentrated photovoltaic systems, and/or methods of making the same: Certain example embodiments of this invention relate to patterned glass that can be used as a cylindrical lens array in a concentrated photovoltaic application, and/or methods of making the same. In certain example embodiments, the lens arrays may be used in combination with strip solar cells and/or single-axis tracking systems.... Agent: Guardian Industries Corp.
20110263068 - Methods for enhancing light absorption during pv applications: Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a... Agent: Applied Materials, Inc.
20110263069 - Methods to avoid laser anneal boundary effect within bsi cmos image sensor array: Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110263070 - Treatment of thin film layers photovoltaic module manufacture: Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The... Agent: Primestar Solar, Inc.
20110263071 - Process for impregnating photosensitizing dye onto conductive substrate of photoanode: The present invention provides a process for preparing a photoanode of a dye-sensitized solar cell (DSSC) by pressure swing impregnation, which includes impregnating a metal oxide layer on a conductive substrate in a photosensitizing dye solution in a vessel; introducing a pressurized inert gas into the vessel to maintain a... Agent: National Tsing Hua University
20110263072 - Forming chalcogenide semiconductor absorbers: Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110263073 - Physical vapour deposition processes: A method of depositing a film of a first material, such as Cadmium Telluride on to a second material, such as Cadmium Sulphide by a physical vapour deposition process wherein said deposition is performed in an atmosphere having a relatively high ambient pressure, in one embodiment between 50 and 200... Agent:
20110263074 - Apparatus and methods for reducing light induced damage in thin film solar cells: Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that... Agent: Applied Materials, Inc.
20110263075 - Vacuum jacket for phase change memory element: A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase change element; a bit line electrode in contact with the upper... Agent: Macronix International Co., Ltd.
20110263076 - Stacked semiconductor device: A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer... Agent: Kabushiki Kaisha Toshiba
20110263077 - Method of assembling semiconductor devices including saw singulation: A method of assembling semiconductor devices for surface mounting includes forming an array of lead frames in which supporting frame structures of adjacent lead frames include an intermediate common bar connecting on both its sides with sets of leads of the respective adjacent lead frames. The semiconductor devices are singulated... Agent: Freescale Semiconductor, Inc
20110263078 - Method for manufacturing semiconductor device: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include die bonding to bond a semiconductor element to a first position of a base member via a bonding layer provided on one surface of the semiconductor element. The method can include wire bonding... Agent: Kabushiki Kaisha Toshiba
20110263079 - Interface protection layaer used in a thin film transistor structure: Embodiments of the disclosure generally provide methods of using an interface protection layer disposed between an active layer and a source-drain metal electrode layer. In one embodiment, a method for forming an interface protection layer in a thin film transistor includes providing a substrate having an active layer formed thereon,... Agent: Applies Materials, Inc.
20110263080 - Manufacturing method of microcrystalline semiconductor film and manufacturing method of semiconductor device: To provide a manufacturing method of a microcrystalline semiconductor film, the manufacturing method comprises the steps of forming a first semiconductor film over a substrate by generating plasma by performing continuous discharge under an atmosphere containing a deposition gas; forming a second semiconductor film over the first semiconductor film by... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263081 - Methods of manufacturing cmos transistor: A method of manufacturing a CMOS transistor can be provided by forming first and second gate electrodes on a substrate and forming a gate insulation layer on the first and second gate electrodes. A semiconductor channel material having a first conductivity type can be formed on the gate insulation layer.... Agent:
20110263082 - Method for manufacturing semiconductor device: In a manufacturing process of a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation through heat treatment and oxygen doping treatment are performed. A transistor including an oxide semiconductor film subjected to dehydration or dehydrogenation through heat treatment and oxygen doping treatment can be a highly reliable transistor... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263083 - Method for manufacturing semiconductor device: An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of forming a first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263084 - Method for manufacturing semiconductor device: An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263085 - Method for manufacturing semiconductor device: One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263086 - Method for forming power devices with carbon-containing region: A method of forming a field effect transistor (FET) includes forming a carbon-containing region over a substrate. An epitaxial layer is formed over the carbon-containing region. The epitaxial layer has a lower doping concentration than the substrate. A body region of a first conductivity type is formed in the epitaxial... Agent: Fairchild Semicondutor Corporation
20110263087 - Semiconductor device and manufacturing method thereof: A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode and a floating gate electrode is not generated, and a manufacturing method of the semiconductor device are provided.... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263088 - Poly-si thin film transistor and organic light-emitting display having the same: A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and... Agent: Samsung Electronics Co., Ltd.
20110263089 - Method for fabricating semiconductor device: A semiconductor device is fabricated by forming a first gate conductive layer in a peripheral circuit region of a semiconductor substrate including a cell region and the peripheral circuit region; forming a buried-type gate in the cell region; and forming a bit line contact and a bit line conductive layer... Agent: Hynix Semiconductor Inc.
20110263090 - Semiconductor device ahving vertical pillar transistors and method for manufacturing the same: A semiconductor device includes vertical pillar transistors formed in respective silicon pillars of a silicon substrate. The gates of the vertical pillar transistor are selectively formed on a single surface of lower portions of the silicon pillars, and drain areas of the vertical pillar transistors are connected with one another.... Agent: Hynix Semiconductor Inc.
20110263091 - Manufacturing method of semiconductor device: Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263092 - Method for fabricating a semiconductor device: The present disclosure discloses an exemplary method for fabricating a semiconductor device comprises selectively growing a material on a top surface of a substrate; selectively growing a protection layer on the material; and removing a portion of the protection layer in an etching gas.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110263093 - Methods of forming variable-resistance memory devices and devices formed thereby: Methods of forming a variable-resistance memory device include patterning an interlayer dielectric layer to define an opening therein that exposes a bottom electrode of a variable-resistance memory cell, on a memory cell region of a substrate (e.g., semiconductor substrate). These methods further include depositing a layer of variable-resistance material (e.g.,... Agent:
20110263094 - Method of forming finned semiconductor devices with trench isolation: A method of manufacturing a semiconductor device structure, such as a FinFET device structure, is provided. The method begins by providing a substrate comprising a bulk semiconductor material, a first conductive fin structure formed from the bulk semiconductor material, and a second conductive fin structure formed from the bulk semiconductor... Agent: Advanced Micro Devices, Inc.
20110263096 - Method for manufacturing soi substrate: A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263097 - Method for manufacturing semiconductor device: According to one embodiment, a method for manufacturing semiconductor device can include forming a groove with a depth shallower than a thickness of a wafer. The method can include attaching a surface protection tape via a first bonding layer provided in the surface protection tape. The method can include grinding... Agent:
20110263100 - Antimony and germanium complexes useful for cvd/ald of metal thin films: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for... Agent: Advanced Technology Materials, Inc.
20110263101 - Carbon nanotube based integrated semiconductor circuit: Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the... Agent: International Business Machines Corporation
20110263098 - Hybrid deposition chamber for in-situ formation of group iv semiconductors & compounds with group iii-nitrides: Hybrid MOCVD or HVPE epitaxial system for in-situ epitaxially growth of group III-nitride layers and group IV semiconductor layers and/or group IV compounds. A hybrid deposition chamber is coupled to each of a first and second precursor delivery system to grow both a transition film comprising either group IV semiconductor... Agent: Applied Materials, Inc.
20110263099 - Manufacturing method of semiconductor device having vertical transistor: A method of manufacturing a semiconductor device includes forming a gate electrode material that covers a gate insulating film formed on each of side surfaces of first and second silicon pillars, wherein a film formation amount of the gate electrode material is controlled so that a first part with which... Agent: Elpida Memory, Inc.
20110263103 - Method and apparatus for cleaning a substrate surface: Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing... Agent:
20110263102 - Methods of fabricating normally-off semiconductor devices: Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form... Agent:
20110263104 - Thin body semiconductor devices: A method for fabricating an FET device is disclosed. The method includes providing a body over an insulator, with the body having at least one surface adapted to host a device channel. Selecting the body to be Si, Ge, or their alloy mixtures. Choosing the body layer to be less... Agent: International Business Machines Corporation
20110263105 - Amorphous silicon film formation method and amorphous silicon film formation apparatus: The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group... Agent: Tokyo Electron Limited
20110263106 - Process for eliminating delamination between amorphous silicon layers: One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110263107 - Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least... Agent: Samsung Mobile Display Co., Ltd.
20110263108 - Method of fabricating semiconductor quantum dots: The invention relates to a method of fabricating at least one semiconductor quantum dot at a predefined position, comprising the steps of: patterning a semiconductor base material using nanoimprint lithography and an etching step, to form at least one nano-hole at the predefined position in the semiconductor base material; and... Agent: Technische Universitat Berlin
20110263109 - Electrooptical device: In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110263110 - Film-forming composition: A film-forming composition for use in a coating diffusion method, capable of diffusing a dopant at a higher concentration, and further capable of concomitantly forming a silica-based coating film is provided. A film-forming composition for constituting a diffusion film provided for diffusing a dopant element into a silicon wafer, the... Agent: Tokyo Ohka Kogyo Co., Ltd.
20110263111 - Group iii-nitride n-type doping: Group III-nitride N-type doping techniques are described.... Agent:
20110263112 - Method for forming a schottky diode having a metal-semiconductor schottky contact: A method for forming a metal-semiconductor Schottky contact in a well region is provided. The method includes forming a first insulating layer overlying a shallow trench isolation in the well region; and removing a portion of the first insulating layer such that only the well region and a portion of... Agent:
20110263113 - Method for manufacturing a semiconductor device: A semiconductor device 100 includes a first gate 210, which is formed using a gate last process. The first gate 210 includes a gate insulating film formed in a bottom surface in a first concave portion formed in the insulating film; a gate electrode formed over the gate insulating film... Agent: Renesas Electronics Corporation
20110263114 - Method for etching mo-based metal gate stack with aluminium nitride barrier: The present application discloses a method for etching a Mo-based metal gate stack with an aluminum nitride barrier, comprising the steps of forming a SiO2 interface layer, a high K dielectric layer, a Mo-based metal gate layer, an AlN barrier layer, a silicon gate layer and a hard mask in... Agent:
20110263115 - Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors: Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for... Agent: Applied Materials, Inc.
20110263116 - Ultrahigh density patterning of conducting media: A reconfigurable device and a method of creating, erasing, or reconfiguring the device are provided. At an interface between a first insulating layer and a second insulating layer, an electrically conductive, quasi one- or zero-dimensional electron gas is present such that the interface presents an electrically conductive region that is... Agent: University Of Pittsburgh - Of The Commonwealth System Of Higher Education
20110263117 - Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device using the same: A method of manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device in which moisture is removed from a porous low-dielectric layer after a chemical mechanical polishing (CMP) process include formation of a porous low-dielectric layer on a substrate. A metal interconnection is formed on the substrate... Agent: Samsung Electronics Co., Ltd.
20110263119 - Method of forming nanoscale three-dimensional patterns in a porous material: A method of forming a nanoscale three-dimensional pattern in a porous semiconductor includes providing a film comprising a semiconductor material and defining a nanoscale metal pattern on the film, where the metal pattern has at least one lateral dimension of about 100 nm or less in size. Semiconductor material is... Agent:
20110263118 - Method of manufacturing semiconductor devices: A method of manufacturing semiconductor devices includes forming a dielectric interlayer over a semiconductor substrate, wherein a wet etch rate (WER) is faster in an upper part of the dielectric interlayer than in a lower part of the dielectric interlayer, forming trenches in the dielectric interlayer, performing a cleaning process... Agent: Hynix Semiconductor, Inc.
20110263120 - Through-substrate via for semiconductor device: A method of fabricating a semiconductor device including providing a substrate having a front surface and a back surface. A masking element is formed on the front surface of the substrate. The masking element includes a first layer having a first opening and a second layer having a second opening... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110263121 - Manufacturing method for semiconductor device containing stacked semiconductor chips: An adhesive film is formed on an electrode film, and a coating film is formed thereon. Nickel, chrome, molybdenum, tungsten, aluminum or an alloy of them is used as a constituent material of the adhesive film. Gold, silver, platinum or an alloy of them is used as a constituent material... Agent: Sanyo Electric Co., Ltd.
20110263122 - Method for making a laminated chip and method for aligning a lithographic mask: A method for making a laminated chip includes: (a) forming a first conductive layer on a substrate; (b) forming an insulating layer on the first conductive layer opposite to the substrate; (c) bombarding the insulating layer using an electron beam to form a plurality of holes that expose the first... Agent: Max Echo Technology Corporation
20110263123 - Placing table structure: Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table... Agent: Tokyo Electron Limited
20110263124 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film... Agent: Kabushiki Kaisha Toshiba
20110263125 - Method of forming mark in ic-fabricating process: A method of forming a mark in an IC fabricating process is described. Two parts of the mark each including a plurality of linear patterns are respectively defined by two exposure steps that either belong to two lithography processes respectively or constitute a double-exposure process including X-dipole and Y-dipole exposure... Agent: Macronix International Co., Ltd.
20110263126 - Method for manufacturing a silicon wafer: Method for manufacturing a silicon wafer free of point defect agglomerates by processes including adding pure carbon to raw material of polycrystalline silicon, melting to become a molten silicon liquid, pulling a single silicon crystal ingot comprising a perfect domain [P] from the molten silicon liquid by controlling a ratio... Agent: Sumco Corporation
20110263127 - Method for fabricating low-k dielectric and cu interconnect: A system and method for improving the performance of an integrated circuit by lowering RC delay time is provided. A preferred embodiment comprises adding a reactive etch gas to the ash/flush plasma process following a low-k dielectric etch. The illustrative embodiments implement a removal of the damage layer that is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110263128 - Selective wet etching and textured surface planarization processes: The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having... Agent: Luminus Devices, Inc.
20110263129 - Method of etching semiconductor nanocrystals: Disclosed is a method of etching semiconductor nanocrystals, which includes dissolving semiconductor nanocrystals in a halogenated solvent containing phosphine so that anisotropic etching of the surface of semiconductor nanocrystals is induced or adding a primary amine to a halogenated solvent containing phosphine and photoexciting semiconductor nanocrystals thus inducing isotropic etching... Agent: Postech Academy-industry Foundation
20110263130 - Methods for rf pulsing of a narrow gap capacitively coupled reactor: A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing... Agent:
20110263132 - Method for forming an adhesive layer and adhesive composition: In a forming method of an adhesive layer including the steps of selectively coating, on a surface to be bonded, an adhesive composition containing a thermosetting composition and an organic solvent using a noncontact coating device; and removing the organic solvent from the adhesive composition coated on the surface to... Agent: Kyocera Chemical Corporation
20110263131 - Method for manufacturing semiconductor device and semiconductor manufacturing apparatus: In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include, upon attaching a bonding material containing a resin and a solvent to a second surface opposed to a first surface including a circuit pattern of a wafer, heating the bonding material to evaporate the... Agent: Kabushiki Kaisha Toshiba
20110263133 - Semiconductor device manufacturing apparatus and semiconductor device manufacturing method: A semiconductor device manufacturing apparatus includes: an accommodation section accommodating an application object; an irradiation section irradiating the application object taken out from the accommodation section with ultraviolet light; an application section including a stage allowing the application object to be placed thereon and an application head discharging a plurality... Agent: Shibaura Mechatronics Corporation
20110263134 - Prevention of oxidation of substrate surfaces in process chambers: In some embodiments, a reducing gas ambient containing a reducing agent is established in a batch process chamber before substrates are subjected to a deposition. The reducing atmosphere is established before and/or during loading of the substrates into the process chamber, and can include flowing reducing gas into the process... Agent: Asm Internaltional N.v.
20110263135 - Semiconductor processing methods, and methods for forming silicon dioxide: Some embodiments include methods for semiconductor processing. A semiconductor substrate may be placed within a reaction chamber. The semiconductor substrate may have an inner region and an outer region laterally outward of said inner region, and may have a deposition surface that extends across the inner and outer regions. The... Agent: Micron Technology, Inc.
20110263136 - Methods of forming a passivation layer: In a composition of forming a passivation layer, the composition includes about 30 to about 60 percent by weight of a mixed polymer resin formed by blending polyamic acid and polyhydroxy amide, about 3 to about 10 percent by weight of a photoactive compound, about 2 to about 10 percent... Agent:
20110263137 - Pretreatment processes within a batch ald reactor: Embodiments of the invention provide methods for forming dielectric materials on a substrate. In one embodiment, a method includes exposing a substrate surface to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas contains a mixture of ozone and oxygen having an ozone concentration within a... Agent:
20110263138 - Substrate processing chamber with dielectric barrier discharge lamp assembly: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode,... Agent:10/20/2011 > 95 patent applications in 75 patent subcategories. categorized by USPTO classification
20110256642 - Manufacturing method of magneto-resistance effect element: The present invention provides a manufacturing method of a magneto-resistance effect element, in which the step coverage of a formed film can be enlarged and also the film can be deposited in a low temperature range. In an embodiment of the present invention, an insulating protective layer is formed on... Agent: Canon Anelva Corporation
20110256643 - Method for detaching layers with low magnetic permeability: A method for detaching a first material layer from a second material layer includes following steps: forming a high-magnetic-permeability material layer on a first material layer comprised of low-magnetic-permeability material; removing a portion of the high-magnetic-permeability material layer to expose a portion of the first material layer; epitaxially growing a... Agent: Advanced Optoelectronic Technology, Inc.
20110256644 - Masks for microlithography and methods of making and using such masks: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the... Agent: Micron Technology, Inc.
20110256645 - Multiple precursor showerhead with by-pass ports: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber... Agent: Applied Materials, Inc.
20110256646 - Method for manufacturing led package and substrate thereof: In a method for manufacturing a LED package, a substrate of the LED package is formed by thermally pressing at least one insulating plate over an electrode plate and then grinding the insulating plates to expose the electrode plate.... Agent: Advanced Optoelectronic Technology, Inc.
20110256647 - Methods of manufacturing elongated lenses for use in light emitting apparatuses: A method of manufacturing an elongated lens for a light emitting apparatus includes forming an elongated lens having an exterior surface, and applying a photoluminescent material to the exterior surface of the lens.... Agent: Bridgelux Inc
20110256648 - Method of making double-sided wavelength converter and light generating device using same: A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched... Agent: 3m Innovative Properties Company
20110256650 - Electro-optical device and an electronic apparatus: An electro-optical device that drives each of plural pixels individually arranged in two dimensions so as to display information, is provided with a group of pixels displaying the information within an effective display region among the plural pixels arranged in two dimensions. A group of plural pseudo-pixels that do not... Agent: Seiko Epson Corporation
20110256649 - Pixel performance improvement by use of a field shield: A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and... Agent: Creator Technology B.v.
20110256651 - Method for fabricating light-emitting devices with vertical light-extraction mechanism: A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the... Agent: Invenlux Corporation
20110256652 - Method for forming a transducer: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein the first layer is formed or provided by hydrogen ion delamination of a starting wafer. The method further includes doping the first layer... Agent: Rosemount Aerospace Inc.
20110256653 - Thermoelectric modules and methods for manufacturing thermoelectric modules: A method for manufacturing a thermoelectric module that involves obtaining a first printed circuit board having a first dielectric layer sandwiched between a first metallic substrate and a first electrical conductive layer, obtaining a second printed circuit board that comprises a second dielectric layer sandwiched between a second metallic substrate... Agent: Mondragon Componentes, S.coop.
20110256654 - Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of... Agent: Solexel, Inc.
20110256655 - Low voltage low light imager and photodetector: Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of... Agent: California Institute Of Technology
20110256656 - Chemical bath deposition apparatus for fabrication of semiconductor films through roll-to-roll processes: A chemical bath deposition method and a system are presented to prepare different thin films on continuous flexible substrates in roll-to-roll processes. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition system deposit thin films... Agent:
20110256657 - Method of encapsulating photovoltaic panel: Melted encapsulant is extruded directly onto the photovoltaic panel to encapsulate a photovoltaic panel.... Agent: Du Pont Apollo Limited
20110256658 - Method for producing photovoltaic cell: l
20110256659 - Method for manufacturing solar cell, etching device, and cvd device: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent... Agent: Ulvac, Inc.
20110256660 - Method of manufacturing photoelectric conversion device: A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically conductive layer, etching an exposed surface of the first insulating film, forming a... Agent: Canon Kabushiki Kaisha
20110256661 - Method for improved patterning accuracy for thin film photovoltaic panels: A method for patterning a thin film photovoltaic panel on a substrate characterized by a compaction parameter. The method includes forming molybdenum material overlying the substrate and forming a first plurality of patterns in the molybdenum material to configure a first patterned structure having a first inter-pattern spacing. Additionally, the... Agent: Stion Corporation
20110256662 - Chip embedded substrate and method of producing the same: A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring... Agent: Shinko Electric Industries Co., Ltd.
20110256663 - High speed, high density, low power die interconnect system: A system for interconnecting at least two die each die having a plurality of conducting layers and dielectric layers disposed upon a substrate which may include active and passive elements. In one embodiment there is at least one interconnect coupling at least one conducting layer on a side of one... Agent: Bae Systems Information And Electronic Systems Integration Inc.
20110256664 - Integrated circuit packaging system with mountable inward and outward interconnects and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base circuit assembly having an integrated circuit device; mounting a pre-formed conductive frame having an outer interconnect and an inner interconnect over the base circuit assembly, the inner interconnect on the integrated circuit device and the outer... Agent:
20110256665 - Stacked wafer manufacturing method: A manufacturing method for a stacked wafer composed of a mother wafer and a stacking wafer bonded together. The mother wafer has a plurality of first semiconductor devices and the stacking wafer has a plurality of second semiconductor devices respectively corresponding to the first semiconductor devices. The manufacturing method includes... Agent: Disco Corporation
20110256667 - Stacked wafer manufacturing method: A manufacturing method for a stacked wafer configured by bonding a mother wafer having a plurality of first semiconductor device and a stacking wafer having a plurality of second semiconductor devices. The manufacturing method includes the steps of attaching a protective member to the front side of the stacking wafer... Agent: Disco Corporation
20110256666 - Thermosetting die bond film, dicing die bond film and semiconductor device: The present invention provides a thermosetting type die bond film that can be preferably broken by tensile force. It is a thermosetting type die bond film used for a method of obtaining a semiconductor element from a semiconductor wafer by forming a reforming region by irradiating the semiconductor wafer with... Agent:
20110256668 - Method of manufacturing semiconductor apparatus: A method of manufacturing a semiconductor apparatus includes forming back surface electrode 4 on back surface of semiconductor wafer 20, that bends convexly toward the front surface side due to back surface electrode 4 being formed; treating the back surface with a plasma for removing the deposits on the back... Agent: Fuji Electric Co., Ltd.
20110256669 - Dicing tape-integrated film for semiconductor back surface: The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive... Agent: Nitto Denko Corporation
20110256670 - Method for manufacturing integrated circuit package system with under paddle leadfingers: A method for manufacturing an integrated circuit package system includes: forming a die paddle; forming an under paddle leadframe including lower leadfingers thereon; attaching the under paddle leadframe to the die paddle with the lower leadfingers extending under the die paddle; attaching a die to the die paddle; and planarizing... Agent:
20110256671 - Semiconductor memory module with reverse mounted chip resistor: A semiconductor memory module having a reverse mounted chip resistor, and a method of fabricating the same are provided. By reverse mounting the chip resistor on the semiconductor memory module, the resistive material is protected, thereby preventing open circuits caused by damage to the resistive material. Also, a chip-resistor connection... Agent:
20110256672 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends... Agent: Kabushiki Kaisha Toshiba
20110256673 - Deposition method and method for manufacturing semiconductor device: An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110256674 - Two-way halo implant: A system and method for ion implantation during semiconductor fabrication. An integrated circuit may be designed with proximately located one-directional transistor gates. A two-way halo ion implantation is performed perpendicularly to the transistor gates in order to embed the dopant into the silicon body on the surface of the semiconductor... Agent: Kabushiki Kaisha Toshiba
20110256675 - Self-aligned process for nanotube/nanowire fets: A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention... Agent: International Business Machines Corporation
20110256676 - Methods of manufacturing a semiconductor device: Methods of manufacturing a semiconductor device include forming integrated structures of polysilicon patterns and hard mask patterns on a substrate divided into at least an NMOS forming region and a PMOS forming region. A first preliminary insulating interlayer is formed on the integrated structures. A first polishing of the first... Agent:
20110256677 - Novel poly resistor and poly efuse design for replacement gate technology: Methods for fabricating a semiconductor device are disclosed. In an example, a method includes forming an isolation region on a substrate, wherein the isolation region extends a depth into the substrate from a substrate surface; forming a recess in the isolation region, wherein the recess is defined by a concave... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110256678 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is disclosed. A method for manufacturing a semiconductor device includes forming a device isolation structure for defining an active region, forming a buried word line traversing the active region, forming one or more insulation film patterns over the buried word line, forming a... Agent: Hynix Semiconductor Inc.
20110256679 - Non-volatile storage having a connected source and well: A non-volatile storage device is disclosed that includes a set of connected non-volatile storage elements formed on a well, a bit line contact positioned in the well, a source line contact positioned in the well, a bit line that is connected to the bit line contact, and a source line... Agent:
20110256680 - Nand flash memory array with cut-off gate line and methods for operating and fabricating the same: A NAND flash memory array, an operating method and a fabricating method of the same are provided. The NAND flash memory array has a cut-off gate line under a control gate in order to operate two cells having vertical channels independently with one control gate (i.e., a shared word line).... Agent: Seoul National University Industry Foundation
20110256681 - Mos devices with improved source/drain regions with sige: A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110256682 - Multiple deposition, multiple treatment dielectric layer for a semiconductor device: A method is provided for fabricating a semiconductor device. A semiconductor substrate is provided. A first high-k dielectric layer is formed on the semiconductor substrate. A first treatment is performed on the high-k dielectric layer. In an embodiment, the treatment includes a UV radiation in the presence of O2 and/or... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110256683 - Method of manufacturing a high-performance semiconductor device: The present invention relates to a method of manufacturing a semiconductor device, wherein the method comprises: providing a substrate; forming a source region, a drain region, a dummy gate structure, and a gate dielectric layer on the substrate, wherein the dummy gate structure is between the source region and the... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences
20110256684 - Field effect transistor using oxide film for channel and method of manufacturing the same: The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.... Agent: Canon Kabushiki Kaisha
20110256685 - Method of manufacturing semiconductor device: A film structure including at least one film is formed on a face of a semiconductor substrate and then a first mask with a pattern is formed on the film structure. A second mask is formed so as to cover the first mask over a bevel region. The film structure... Agent: Elpida Memory, Inc
20110256686 - Semiconductor device and method of manufacturing the same: A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure... Agent: Renesas Electronics Corporation
20110256687 - Method for fabricating through substrate microchannels: A method of forming large microchannels in an integrated circuit by etching an enclosed trench into the substrate and later thinning the backside to expose the bottom of the trenches and to remove the material enclosed by the trench to form the large microchannels. A method of simultaneously forming large... Agent: Texas Instruments Incorporated
20110256688 - Semiconductor component and methods for producing a semiconductor component: A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which... Agent: Infineon Technologies Ag
20110256689 - Optical device wafer processing method and laser processing apparatus: An optical device wafer processing method including a laser processed groove forming step of applying a laser beam for performing ablation to the front side or back side of a substrate of an optical device wafer along streets, thereby forming a laser processed groove as a break start point on... Agent: Disco Corporation
20110256690 - Integrated circuit wafer dicing method: An integrated circuit wafer dicing method is provided. The method includes forming a plurality of integrated circuits on a wafer substrate, forming a patterned protective layer on the integrated circuits, and etching through the wafer substrate to form a plurality of integrated circuit dies by using the patterned protective layer... Agent:
20110256691 - Removal of surface dopants from a substrate: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma,... Agent:
20110256695 - Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device: The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110256693 - Method for synthesis of high quality large area bulk gallium based crystals: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water... Agent: Soraa, Inc.
20110256694 - Methods of forming one or more covered voids in a semiconductor substrate, methods of forming field effect transistors, methods of forming semiconductor-on-insulator substrates, methods of forming a span comprising silicon dioxide, methods of cooling semi: Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures... Agent: Micron Technology, Inc.
20110256692 - Multiple precursor concentric delivery showerhead: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the... Agent: Applied Materials, Inc.
20110256696 - Semiconductor device for preventing the leaning of storage nodes and method for manufacturing the same: A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are formed of a BN layer and have a hexagonal... Agent: Hynix Semiconductor Inc.
20110256697 - Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same: A recessed-gate transistor device includes a gate electrode embedded in a gate trench formed in a semiconductor substrate, wherein the gate trench includes a vertical sidewall and a U-shaped bottom. A source region is provided at one side of the gate trench within the semiconductor substrate. A drain region is... Agent:
20110256698 - Stepped masking for patterned implantation: An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new... Agent: Varian Semiconductor Equipment Associates, Inc.
20110256699 - Method for manufacturing silicon carbide semiconductor device: Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming... Agent: Showa Denko K.k.
20110256700 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device capable of simplifying a fabrication process is provided. The method includes providing a substrate on which first and second regions are defined, forming an interlayer insulating film including first and second trenches on the substrate, the first and second trenches being formed in... Agent:
20110256701 - Method for tuning the work function of a metal gate of the pmos device: The present application discloses a method for tuning the work function of a metal gate of the PMOS device, comprising the steps of depositing a layer of metal nitride or a metal on a layer of high-k gate dielectric by physical vapor deposition (PVD), as a metal gate; doping the... Agent:
20110256703 - Semiconductor device and method of fabricating the same: A semiconductor device according to one embodiment includes: a substrate having an element region where a semiconductor element is formed; a via hole formed in a portion of the substrate adjacent to the element region; a conducting portion provided in the via hole via an insulating layer; and a buffer... Agent: Kabushiki Kaisha Toshiba
20110256702 - Thin film transistor and display device, and method for manufacturing thereof: The present invention discloses a display device and a manufacturing method thereof by which a manufacturing process can be simplified. Further, the present invention discloses technique for manufacturing a pattern such as a wiring into a desired shape with good controllability. A method for forming a pattern for constituting the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110256704 - Method for manufacturing a metal gate electrode/high k dielectric gate stack: A method of manufacturing a metal gate/high K dielectric gate stack includes the steps of: forming an interfacial layer of SiON or SiO2 on a silicon substrate; depositing a high K dielectric film on the interfacial layer; performing a rapid thermal anneal of the high K dielectric film; depositing a... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences
20110256705 - Method for forming a split gate device: A method for forming a semiconductor device includes forming a dielectric layer over a substrate. The method further includes forming a select gate layer over the dielectric layer. The method further includes etching the select gate layer at a first etch rate to form a first portion of a sidewall... Agent:
20110256706 - Method of forming a semiconductor structure: A method for reducing the effective thickness of a gate oxide using nitrogen implantation and anneal subsequent to dopant implantation and activation is provided. More particularly, the present invention provides a method for fabricating semiconductor devices, for example, transistors, which include a hardened gate oxide and which may be characterized... Agent: Micron Technology, Inc.
20110256708 - Methods of manufacturing flash memory devices by selective removal of nitrogen atoms: A method of manufacturing a flash memory device includes: forming a dielectric layer on an active region of a substrate having an isolation region and the active region; forming a floating gate on the dielectric layer; forming an isolation layer in the isolation region; forming a nitride layer including a... Agent:
20110256707 - Process for fabricating non-volatile storage: Fabricating non-volatile storage includes creating gate stacks with hard masks on top of the gate stacks. The gate stacks include two polysilicon layers and a dielectric layer between the two polysilicon layers. A portion of the hard mask over each gate stack is removed, leaving two separate tapered sections of... Agent:
20110256709 - Level posture sensing chip and its manufacturing method, level posture sensor: The present invention discloses a gas pendulum style level posture sensing chip and its manufacturing method and a level posture sensor. The gas pendulum style level posture sensing chip includes: a semiconductor substrate; two sets of arm thermosensitive fuses formed on the surface of the semiconductor substrate, each set of... Agent: Beijing Information Technology Institute
20110256710 - Semiconductor device and method for manufacturing same: When a metal cap film is provided on an electric fuse, the break-ability of the electric fuse is reduced. A semiconductor device 1 includes interconnects 10, an electric fuse 20 and metal cap films 30. Both of the interconnects 10 and the electric fuse 20 are composed of Cu. The... Agent: Renesas Electronics Corporation
20110256711 - Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods: Microfeature workpieces having conductive vias formed by chemically reactive processes, and associated systems and methods are disclosed. A method in accordance with one embodiment includes disposing a conductive lining on walls of a via in a microfeature workpiece, so that a space is located between opposing portions of the lining... Agent: Micron Technology, Inc.
20110256712 - Etchant for electrode and method of fabricating thin film transistor array panel using the same: The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at... Agent: Samsung Electronics Co., Ltd.
20110256714 - Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same: The present invention comprises a first substrate with a die formed on a die metal pad, a first and a second wiring circuits formed on the surfaces of the first substrate. A second substrate has a die opening window for receiving the die, a third wiring circuit is formed on... Agent: King Dragon International Inc.
20110256715 - Barrier layer for copper interconnect: A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110256716 - Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features: A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of... Agent:
20110256717 - Methods for fabricating semiconductor devices: Provided are semiconductor devices and methods for fabricating the same. A method for fabricating a semiconductor device includes: forming an interlayer dielectric layer including an opening in which a lower conductive layer is exposed; forming a barrier layer on the interlayer dielectric layer and on the lower conductive layer the... Agent: Samsung Electronics Co., Ltd.
20110256718 - Thin films: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric... Agent: Asm International N.v.
20110256719 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface... Agent: Samsung Electronics Co., Ltd
20110256720 - Techniques for impeding reverse engineering: Anti-reverse engineering techniques are provided. In one aspect, a method for forming at least one feature in an insulating layer is provided. The method comprises the following steps. Ions are selectively implanted in the insulating layer so as to form at least one implant region within the insulating layer, the... Agent: International Business Machines Corporation
20110256721 - Ruthenium-containing precursors for cvd and ald: Disclosed are ruthenium-containing precursors and methods of using the same in CVD and ALD.... Agent: L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude
20110256722 - Methods for forming roughened surfaces and applications thereof: Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by... Agent: Asm International N.v.
20110256724 - Gas and liquid injection methods and apparatus: A liquid injection system for a processing chamber includes a liquid injector that receives a liquid from a liquid supply and that selectively pulses the liquid into a conduit. A control module selects a number of pulses and a pulse width of the liquid injector. A gas supply supplies gas... Agent: Novellus Systems, Inc.
20110256723 - Method for forming semiconductor device: A method for forming a semiconductor device is disclosed. A method for forming a semiconductor device includes forming a first sacrificial hard mask layer over a semiconductor substrate including an etch layer, forming a first spacer over the first sacrificial hard mask layer, forming a first sacrificial hard mask pattern... Agent: Hynix Semiconductor Inc.
20110256725 - Structure and method for thin film device with stranded conductor: Provided is a thin film device and an associated method of making a thin film device. For example, fabrication of an inverter thin film device is described. Moreover, a parallel spaced electrically conductive strips are provided upon a substrate. A functional material is deposited upon the conductive strips. A 3D... Agent:
20110256726 - Plasma activated conformal film deposition: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in... Agent:
20110256727 - Method of forming semiconductor patterns: Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of... Agent: Asm Genitech Korea Ltd.
20110256728 - Wafer thinning method in wafer treating system: A wafer thinning apparatus for treating wafers each having at least a circuit-forming surface thereof protected, by immersing the wafers in a treating solution. The apparatus includes a support table for receiving, as placed thereon, containers each containing a plurality of wafers in one of groups into which the wafers... Agent: Dainippon Screen Mfg. Co., Ltd.
20110256729 - Showerhead for cvd depositions: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled... Agent: Texas Instruments Incorporated
20110256730 - Finishing method for manufacturing substrates in the field of electronics: The invention relates to a method for finishing the surface of semiconducting substrate that has a set of layers and a useful semiconducting layer on at least one of the faces of the substrate, wherein the useful layer has a rough free surface. The method smoothes out the rough free... Agent: S.o.i. Tec Silicon On Insulator Technologies
20110256731 - method for fabricating a gate dielectric layer: A method for fabricating the gate dielectric layer comprises forming a high-k dielectric layer over a substrate; forming an oxygen-containing layer on the high-k dielectric layer by an atomic layer deposition process; and performing an inert plasma treatment on the oxygen-containing layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110256732 - Pulsed plasma to affect conformal processing: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to... Agent: Varian Semiconductor Equipment Associates
20110256733 - Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus: An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle... Agent: Hitachi Kokusai Electric Inc.
20110256734 - Silicon nitride films and methods: Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included.... Agent:
20110256735 - Ald of metal silicate films: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according... Agent: Asm America, Inc.
20110256736 - Method for processing a substrate using a laser beam: A method for processing a substrate includes generating a first laser beam, splitting the first laser beam into a plurality of second laser beams, focusing the split second laser beams on a plane in the substrate parallel to a main surface of the substrate, and performing surface separation of the... Agent:10/13/2011 > 60 patent applications in 51 patent subcategories. categorized by USPTO classification
20110250706 - Method of fabricating mems, nems, photonic, micro- and nano-fabricated devices and systems: An improved method for the fabrication of Micro-Electro-Mechanical Systems (MEMS), Nano-Electro-Mechanical Systems (NEMS), Photonics, Nanotechnology, 3-Dimensional Integration, Micro- and Nano-Fabricated Devices and Systems for both rapid prototyping development and manufacturing is disclosed. The method includes providing a plurality of different standardized and repeatable process modules usable in fabricating the devices... Agent:
20110250707 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first group identifier allocated to a first group of semiconductor wafers is detected. The first group of semiconductor wafers includes a first semiconductor wafer to be processed first among the first group.... Agent: Elpida Memory, Inc.
20110250708 - Method of manufacturing organic light emitting diode arrays and system for eliminating defects in organic light emitting diode arrays: A method for manufacturing an organic light emitting diode (OLED) array is provided that includes applying an energizing signal to at least one of the OLED pixels in the array. The energizing signal exceeds a threshold level. The method also includes reducing the energizing signal and identifying an OLED in... Agent: Emagin Corporation
20110250710 - Electrical alignment mark set and method for aligning wafer stack: An electrical alignment mark set and the method for using the same is disclosed. The electrical alignment mark set includes at least a top mark and a bottom mark. The top mark includes multiple pads disposed on a top wafer and having first pads and second pads, and a monitoring... Agent:
20110250709 - Method and apparatus for manufacturing thin film photoelectric conversion module: A method for manufacturing a thin film photoelectric conversion module comprising the steps of: (A) forming a plurality of divided strings by dividing a string, in which thin film photoelectric conversion elements provided by sequentially laminating a first electrode layer, a photoelectric conversion layer and a second electrode layer on... Agent:
20110250711 - Method of manufacturing light-emitting device: A method of manufacturing a light-emitting device includes forming a planar board that includes a plurality of first metallic plates and a plurality of second metallic plates continuously connected by a resin, by use of a positioning frame including a plurality of first concave portions and a plurality of second... Agent: Citizen Electronics Co., Ltd.
20110250712 - Color electrophoretic display device and method for manufacturing the same: According to an embodiment of the present invention, a method for manuafacturing a color electrophoretic display device includes forming a thin film transistor (TFT) array substrate including a display region, wherein a plurality of pixel regions is defined in a matrix, and alignment keys are provided at the outside of... Agent:
20110250713 - Active matrix substrate manufacturing method and liquid crystal display device manufacturing method: Provided is an active matrix substrate manufacturing method, including the steps of: selectively forming a laminated structure pattern, by forming the laminated structure on a glass substrate (2), by forming a first photosensitive resin pattern (PR) on the laminated structure, and by selectively forming the laminated structure pattern using the... Agent: Sharp Kabushiki Kaisha
20110250714 - Nitride semiconductor and method for manufacturing same: A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.... Agent: Kabushiki Kaisha Toshiba
20110250715 - Methods for forming anti-reflection structures for cmos image sensors: Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first... Agent: International Business Machines Corporation
20110250716 - Solid-state image pickup device and method for manufacturing same: In a solid-state image pick up device, a first conduction type semiconductor layer which has a first surface side. A second surface side which is located the opposite side of the first surface side and an image sensor area. A photo-conversion area which is configured in the first surface side... Agent: Kabushiki Kaisha Toshiba
20110250717 - Solid-state imaging device and method for manufacturing the same: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided.... Agent: Sony Corporation
20110250718 - Lamination as a modular approach for building organic photosensitive devices: There is disclosed a modular lamination approach for processing organic photosensitive devices that allows the individual processing of device components, that once processed are brought together in a final step to make electrical contact. The disclosed method of preparing a laminated photosensitive device having at least one donor-acceptor heterojunction comprises:... Agent:
20110250719 - Organic semiconductors: where Ar1, Ar2, Ar3 and Ar4 independently comprise monocyclic aromatic rings and at least one of Ar1, Ar2, Ar3 and Ar4 is substituted with at least one substituent X, which in each occurrence may be the same or different and is selected from the group consisting of (i) optionally substituted... Agent: Cambridge Display Tecnology Limited
20110250721 - Stacked and shielded packages with interconnects: Embodiments include methods for forming a stacked die package with a first die, first active circuitry on an upper surface of the first die, and a first conductive pattern on the first active circuitry. The stacked die package further includes a second die stacked over the first die, where the... Agent: Freescale Semiconductor, Inc.
20110250720 - Thru silicon enabled die stacking scheme: A die to die bonding system and method includes an upper die having a front side, a back side, and a fully filled thru silicon via, a portion of the fully filled thru silicon via protruding from the back side of the upper die. A lower die includes a front... Agent: Texas Instruments Incorporated
20110250722 - Inverse chip connector: A system for connecting a first chip to a second chip having a post on the first chip having a first metallic material, a recessed wall within the second chip and defining a well within the second chip, a conductive diffusion layer material on a surface of the recessed wall... Agent:
20110250723 - Manufacturing method of semiconductor device: In an embodiment, an insulating film is formed over a flat surface; a mask is formed over the insulating film; a slimming process is performed on the mask; an etching process is performed on the insulating film using the mask; a conductive film covering the insulating film is formed; a... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110250724 - Manufacturing method of semiconductor device: An embodiment is a manufacturing method of a semiconductor device including the steps of forming a first insulating film; forming a first mask over the first insulating film; performing a slimming process on the first mask to form a second mask; performing an etching process on the first insulating film... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110250725 - Method of fabricating gate electrode using a treated hard mask: A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110250726 - Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof: Method for manufacturing a semiconductor device. A channel layer is formed by epitaxially growing a semiconductor layer, in which an ion species of a first conductivity is implanted on a semiconductor substrate. A source region, a drain region, and an emitter region which are of the first conductivity, are formed... Agent: Panasonic Corporation
20110250727 - Method of manufacturing flash memory device: A method of manufacturing flash memory device is provided and includes the following steps. First, a substrate is provided. Then, a stacked gate structure is formed on the substrate. Subsequently, a first oxide layer is formed on the stacked gate structure. Following that, a nitride spacer is formed on the... Agent:
20110250728 - Method for manufacturing semiconductor device: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a semiconductor layer. The method can include forming a first impurity implantation region by implanting first impurity of a first... Agent: Kabushiki Kaisha Toshiba
20110250729 - Method for fabricating memory: A method for fabricating a memory is described. Word lines are provided in a first direction. Bit lines are provided in a second direction. A top electrode is formed connecting to a corresponding word line. A bottom electrode is formed connecting to a corresponding bit line. A resistive layer is... Agent: Macronix International Co., Ltd.
20110250730 - Method of forming high capacitance semiconductor capacitors with a single lithography step: An interdigitated semiconductor capacitor with a large number of plates and a capacitance in the micro-farad range is formed on a wafer with only a single lithography step by depositing each odd layer of metal through a first shadow mask that lies spaced apart from the wafer, and each even... Agent:
20110250731 - Preferential dielectric gapfill: Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a... Agent: Applied Materials, Inc.
20110250732 - Orientation of an electronic cmos structure with respect to a buried structure in the case of a bonded and thinned-back stack of semiconductor wafers: The invention is based on a method for aligning an electronic CMOS structure with respect to a buried structure in the case of a bonded and thinned back stack of semiconductor wafers. The method is intended to avoid “front side to rear side” alignments. The proposed method for aligning the... Agent:
20110250733 - Thinning method and silicon wafer based structure: A method for thinning a wafer layer to a predetermined thickness comprises two phases of thinning. A first thinning phase and a second thinning phase, wherein the first thinning phase is a preparatory thinning phase and the second thinning phase is a final thinning phase, so performed that the structure... Agent:
20110250734 - Specimen processing apparatus and method thereof: An apparatus and a method of processing a specimen includes a final analysis specimen that is manufactured by sequentially performing specimen processing processes using a laser beam with respect to an initial laminate specimen loaded on a stage. As a result, the final specimen manufacturing time may be reduced and... Agent: Samsung Electronics Co., Ltd.
20110250735 - Method for cutting an electric fuse: An electric fuse includes: a first interconnect and a second interconnect, formed on a semiconductor substrate; a fuse link, formed on the semiconductor substrate and provided so that an end thereof is coupled to the first interconnect, the fuse link being capable of electrically cutting the second interconnect from the... Agent: Renesas Electronics Corporation
20110250736 - Schottky barrier diode and method for making the same: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic... Agent: Rohm Co., Ltd.
20110250737 - Transistor with a-face conductive channel and trench protecting well region: A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region... Agent: Cree, Inc.
20110250738 - Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process: A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single... Agent: Samsung Electronics Co., Ltd.
20110250739 - Epitaxial wafer having a heavily doped substrate and process for the preparation thereof: This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising... Agent: Memc Electronic Materials, Inc.
20110250740 - Method and device for the treatment of a semiconductor substrate: Method for the treatment of a semiconductor substrate (2), in which an ion beam (4) is produced from a doping gas and is directed onto the semiconductor substrate (2), characterized in that the doping gas is fed through a plastic hose (6) to a unit (3) for producing an ion... Agent: Infineon Technologies Ag
20110250741 - Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the... Agent: Sony Corporation
20110250742 - Controlling warping in integrated circuit devices: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a... Agent: Agere Systems Inc.
20110250743 - Method for producing a transistor gate with sub-photolithographic dimensions: Methods of fabricating compound semiconductor devices are described.... Agent: Avago Technologies WirelessIP(singapore) Pte. Ltd.
20110250744 - Semiconductor memory device and manufacturing method thereof: A semiconductor memory device includes a first block having first memory cells and first select transistors, a second block having second memory cells and second select transistors, and arranged adjacent to the first block in a first direction, the second select transistor being arranged to face the first select transistor... Agent:
20110250745 - Methods of forming patterns, and methods of forming integrated circuits: Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to... Agent:
20110250746 - Nonvolatile memory device with multiple blocking layers and method of fabricating the same: A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer... Agent: Hynix Semiconductor Inc.
20110250747 - Memory device and method for manufacturing memory devices: Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The memory device may be a flash memory device. The method for manufacturing the memory device may include sequentially stacking a tunnel dielectric, a floating gate conductive layer, an inter-gate dielectric, and a... Agent:
20110250748 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming... Agent: Fujitsu Semiconductor Limited
20110250749 - Interconnects with improved electromigration reliability: An interconnect structure in a semiconductor device may be formed to include a number of segments. Each segment may include a first metal. A barrier structure may be located between the plurality of segments to enable the interconnect structure to avoid electromigration problems.... Agent: Advanced Micro Devices, Inc.
20110250750 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: (a) forming an interlayer insulating film on a substrate; (b) forming an interconnect in the interlayer insulating film; (c) applying an organic solution to an upper surface of the interconnect and an upper surface of the interlayer insulating film; (d) after (c),... Agent: Panasonic Corporation
20110250751 - Method for filling metal: A method for filling a metal is disclosed. First, a substrate is provided. The substrate includes a metal material layer, a dielectric layer covering the metal material layer and a hard mask layer covering the dielectric layer. The hard mask layer has at least one opening to expose the underlying... Agent:
20110250752 - Method of manufacturing a semiconductor integrated circuit device: In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a... Agent:
20110250753 - Atomic layer deposition methods: An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. The first monolayer comprises metal and halogen of the metal halide. While flowing... Agent: Micron Technology, Inc.
20110250756 - Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing:
20110250755 - Method of polishing wafer surface on which copper and silicon are exposed: A method of the present invention includes polishing a wafer having an exposed copper or copper alloy surface and an exposed silicon surface by using a polishing composition containing 0.02 to 0.6% by mass of hydrogen peroxide, preferably 0.05 to 0.2% by mass thereof. The polishing composition preferably further contains... Agent: Fujimi Incorporated
20110250754 - Polishing composition and polishing method: A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as dicyandiamide, and an oxidant. The water-soluble polymer may be a water-soluble polymer including a constitutional unit originating from dicyandiamide and a constitutional unit originating from... Agent: Fijimi Incorporated
20110250757 - Method of manufacturing semiconductor device: A coating film is formed on a member to be etched, which includes an amorphous carbon film and a silicon oxynitride film, by a spin coating method; a sidewall core is formed by pattering the coating film; a silicon oxide film is formed to cover at least the side surface... Agent: Elpida Memory, Inc.
20110250759 - Method to reduce charge buildup during high aspect ratio contact etch: A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas.... Agent: Micron Technology, Inc.
20110250758 - Plasma processing method of semiconductor manufacturing apparatus: Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated... Agent: Samsung Electronics Co., Ltd
20110250760 - Method for manufacturing a micro-electromechanical structure: Disclosed herein is a method for manufacturing a micro-electromechanical structure. The method includes the following steps. A circuitry layer having a release feature is formed on an upper surface of a first substrate. A passive layer is formed on the circuitry layer without covering the release feature. The release feature... Agent: Memsor Corporation
20110250761 - Plasma etching method, plasma etching apparatus, and computer-readable storage medium: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a... Agent: Tokyo Electron Limited
20110250762 - Method of cleaning and micro-etching semiconductor wafers: A method of simultaneously cleaning inorganic and organic contaminants from semiconductor wafers and micro-etching the semiconductor wafers. After the semiconductor wafers are cut or sliced from ingots, they are contaminated with cutting fluid as well as metal and metal oxides from the saws used in the cutting process. Aqueous alkaline... Agent: Rohm And Haas Electronic Materials LLC
20110250764 - Method of thermally treating silicon with oxygen: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other... Agent: Applied Materials, Inc.
20110250763 - Plasma oxidation method and plasma oxidation apparatus: A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the... Agent: Fujifilm Corporation
20110250765 - Coating treatment method, non-transitory computer storage medium and coating treatment apparatus: A coating treatment method includes: a first step of discharging a coating solution from a nozzle to a central portion of a substrate while acceleratingly rotating the substrate, to apply the coating solution over the substrate; a second step of then decelerating the rotation of the substrate and continuously rotating... Agent: Tokyo Electron Limited10/06/2011 > 97 patent applications in 68 patent subcategories. categorized by USPTO classification
20110244599 - Process integration of a single chip three axis magnetic field sensor: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of... Agent: Everspin Technologies, Inc.
20110244600 - Method for tunably repairing low-k dielectric damage: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1... Agent: Lam Research Corporation
20110244601 - Method for producing a substrate including a step of thinning with stop when a porous zone is detected: A method for producing a substrate including a step of thinning the thickness of the substrate is disclosed. The method is characterized in that it includes the following steps: the formation of a porous zone in an inner layer of the substrate; the progressive thinning of the thickness of the... Agent: Commissariat A L'energie Atomique Et Aux Ene. Alt.
20110244602 - Method of producing semiconductor: In a conventional SGT production method, during dry etching for forming a pillar-shaped silicon layer and a gate electrode, an etching amount cannot be controlled using an end-point detection process, which causes difficulty in producing an SGT while stabilizing a height dimension of the pillar-shaped silicon layer, and a gate... Agent: Unisantis Electronics (japan) Ltd.
20110244603 - Customized metallization patterns during fabrication of semiconductor devices: Embodiments of the invention are directed to a system and method of depositing material on a polycrystalline semiconductor substrate. The method may comprise detecting characteristics of polycrystalline semiconductor substrate, generating image data of a customized pattern of lines based on the characteristics of the substrate and depositing material from one... Agent:
20110244604 - Method of manufacturing semiconductor device: A semiconductor wafer having IGBT elements and transistors formed on a surface thereof is prepared. Electron beams are emitted all over the surface of the semiconductor wafer. Recombination centers are formed in the IGBT elements and the transistors. ON voltages of the transistors are measured by a measurement device, and... Agent: Mitsubishi Electric Corporation
20110244605 - Method of fabricating semiconductor device: According to one embodiment, a method of fabricating a semiconductor device, including forming semiconductor chips having a test circuit electrically connected to an input pad and an output pad, the input pad having a first pad located on a first principal surface and a second pad located on a second... Agent: Kabushiki Kaisha Toshiba
20110244606 - Chip-type led and method for manufacturing the same: In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at... Agent: Sharp Kabushiki Kaisha
20110244607 - Organic light emitting device and method of manufacturing the same: Disclosed is an organic light emitting device which includes a substrate; a encapsulation substrate, an organic light emitting unit interposed between the substrate and the encapsulation substrate. A water vapor absorption material-containing transparent sealant layer covers the organic light emitting unit. The sealant layer includes a transparent sealant having a... Agent: Samsung Mobile Display Co., Ltd.
20110244608 - Solid-state lasers: A method for assembling an optically pumped solid-state laser having an extended cavity. The method includes the steps of providing a casing, mounting a TEC and a base plate in the casing, and mounting a plurality of laser components on the base plate using a UV and heat curing adhesive.... Agent: Cobolt Ab
20110244611 - Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third... Agent:
20110244610 - Method for producing group iii nitride semiconductor light-emitting device: The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to... Agent: Toyoda Gosei Co., Ltd.
20110244609 - Method of forming current-injecting/tunneling light-emitting device: An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched... Agent: Lightwave Photonics, Inc.
20110244612 - Optical device wafer processing method: An optical device wafer processing method for dividing an optical device wafer into individual optical devices along a plurality of crossing streets formed on the front side of the wafer. The wafer is composed of a substrate and an optical device layer formed on the front side of the substrate.... Agent: Disco Corporation
20110244615 - Method for manufacturing pixel structure: A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer,... Agent: Au Optronics Corporation
20110244614 - Method of manufacturing an optical matrix device: According to the method of manufacturing an optical matrix device of this invention, semiconductor films and gate insulating films which influence the characteristics of thin-film transistors most are formed in a vacuum (S12, S13), whereby the interfaces between the semiconductor films and gate insulating films are not contaminated. The semiconductor... Agent:
20110244613 - Wafer-level in-p si bonding for silicon photonic apparatus: Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by... Agent:
20110244616 - Vertical structure led current spreading by implanted regions: An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In some embodiments, the non-conductive regions are located in the p-type layer. In other embodiments, the non-conductive layer may be in the... Agent: Varian Semiconductor Equipment Associates, Inc.
20110244617 - Forming a compound-nitride structure that includes a nucleation layer: The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber,... Agent: Applied Materials, Inc.
20110244618 - Method for manufacturing photovoltaic device including flexible or inflexible substrate: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process... Agent:
20110244619 - Method of manufacturing solid-state imaging device: A solid-state imaging device with an improved heat release-ability for releasing a heat generated in the amplifier unit of the solid-state image sensing element. The solid-state imaging device 10 of the present invention includes an elongated substrate (molded case 18), a metallic layer 16 exposed in a surface of the... Agent: Renesas Electronics Corporation
20110244620 - Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at... Agent: Primestar Solar, Inc.
20110244621 - Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be... Agent: Primestar Solar, Inc.
20110244622 - Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be... Agent: Primestar Solar, Inc.
20110244623 - Rapid thermal method and device for thin film tandem cell: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first transparent electrode layer is formed overlying the surface region. A multilayered structure including a copper material and an indium material is formed overlying a electrode surface region. The... Agent: Stion Corporation
20110244624 - Production method of photoelectric conversion device and solution for forming semiconductor: The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming... Agent: Kyocera Corporation
20110244625 - Continuously optimized solar cell metallization design through feed-forward process: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that... Agent: Varian Semiconductor Equipment Associates, Inc.
20110244626 - Method of forming solar cell: A method of forming solar cell includes the following steps. A substrate having a first region and a second region is provided. A dopant source layer is then formed on the substrate. A laser beam is used to locally irradiate the dopant source layer corresponding to the first region to... Agent:
20110244627 - Method of manufacturing photoelectric conversion device: In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting... Agent: Canon Kabushiki Kaisha
20110244628 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed... Agent: Elpida Memory, Inc.
20110244629 - Packaging process to create wettable lead flank during board assembly: A method and apparatus are described for fabricating a low-pin-count chip package (701) including a die pad (706) for receiving an integrated circuit device and a plurality of connection leads (702) having recessed lead ends (704) at the outer peripheral region of each contact lead. After forming the package body... Agent:
20110244630 - Method of substrate bonding with bonding material having rare earth metal: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.... Agent: Analog Devices, Inc.
20110244631 - Semiconductor device manufacturing method, semiconductor device, and wiring board: In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on... Agent: Shinko Electric Industries Co., Ltd.
20110244632 - Reduction of mechanical stress in metal stacks of sophisticated semiconductor devices during die-substrate soldering by an enhanced cool down regime: In a reflow process for connecting a semiconductor die and a package substrate, the temperature gradient and thus the thermally induced mechanical forces in a sensitive metallization system of the semiconductor die may be reduced during the cooling phase. To this end, one or more heating intervals may be introduced... Agent: Globalfoundries Inc.
20110244633 - Package assembly for semiconductor devices: Semiconductor packages and methods for making and using such semiconductor packages are described. The semiconductor packages contain a dual gauge heat sink exposed on an upper part of the package, a leadframe containing a gate lead and an exposed drain pad on a lower part of the package, and a... Agent:
20110244635 - Method for manufacture of inline integrated circuit system: A method for manufacture of an integrated circuit package system includes: providing a leadframe with an integrated circuit mounted thereover; encapsulating the integrated circuit with an encapsulation; mounting an etch barrier below the leadframe; and etching the leadframe.... Agent:
20110244634 - Semiconductor package and methods of manufacturing the same: A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes a first package that a first semiconductor chip is mounted on a front side of a first substrate and a redistributed pad including a first redistributed pad electrically connected to the first substrate and a... Agent: Samsung Electronics Co., Ltd.
20110244636 - Manufacturing method of semiconductor chip-embedded wiring substrate: With respect to a substrate including a first film, on a surface of which a pad is formed, a second film made of thermoplastic resin is a thermal compression bonded to a pad formation surface of the substrate. A stud bump formed on a semiconductor chip is stuffed into the... Agent: Denso Corporation
20110244637 - Mold and substrate for use with mold: A mold (10) including a first mold part (12) and a second mold part (14) define a mold cavity (16) therebetween. A gate (18) is formed in at least one of the first and second mold parts (12) and (14) such that the gate (18) communicates with the mold cavity... Agent: Freescale Semiconductor, Inc
20110244638 - Semiconductor device manufacturing method: A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate,... Agent: Mitsumi Electric Co., Ltd.
20110244639 - Method for manufacturing a pattern formed body, method for manufacturing a functional element, and method for manufacturing a semiconductor element: A main object of the present invention is to disclose a manufacturing method of the pattern formed body capable of attaining patterning efficiently with a high precision. To attain the object, the present invention provides a method comprising: a photoresist pattern formation step of forming a photoresist pattern on a... Agent: Dai Nippon Printing Co., Ltd.
20110244640 - Method of manufacturing flash memory cell: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides... Agent:
20110244641 - Shielded gate trench fet with an inter-electrode dielectric having a low-k dielectric therein: A method for forming a shielded gate trench field effect transistor (FET) includes forming trenches in a semiconductor region, forming a shield electrode in a bottom portion of each trench, and forming an inter-electrode dielectric (IED) extending over the shield electrode. The IED may comprise a low-k dielectric. The method... Agent:
20110244642 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device utilizes a substrate including a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. A first well of a first conductivity type is formed. Two separate second wells of a second conductivity type are formed in the... Agent: United Microelectronics Corp.
20110244643 - Silicon carbide semiconductor device and manufacturing method thereof: A manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be ensured, and by the method manufacturing costs can be reduced. Well regions, channel regions, and gate electrodes are formed so that, given... Agent: Mitsubishi Electric Corporation
20110244644 - Two step poly etch ldmos gate formation: A method of making a transistor includes etching a first side of a gate, the gate including an oxide layer formed over a substrate and a conductive material formed over the oxide layer, the etching removing a first portion of the conductive material, implanting an impurity region into the substrate... Agent:
20110244645 - Semiconductor device and method for fabricating the same: A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and... Agent: Panasonic Corporation
20110244646 - Semiconductor with a dynamic gate-drain capacitance: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer... Agent: Infineon Technologies Austria Ag
20110244647 - Mark structure for coarse wafer alignment and method for manufacturing such a mark structure: A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The... Agent: Asml Netherlands B.v.
20110244648 - Method of manufacturing nonvolatile memory device: In one embodiment of a method of manufacturing a nonvolatile memory device, a tunnel insulating layer and a charge trap layer are first formed over a semiconductor substrate that defines active regions and isolation regions. The tunnel insulating layer, the charge trap layer, and the semiconductor substrate formed in the... Agent: Hynix Semiconductor Inc.
20110244649 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes: a process to form an element isolation trench on a semiconductor substrate, the element isolation trench having a crystal plane orientation that is different from a crystal plane orientation on a surface of the semiconductor substrate; a process to deposit, on the... Agent: Kabushiki Kaisha Toshiba
20110244650 - Semiconductor device with sti and method for manufacturing the semiconductor device: A semiconductor device includes: a semiconductor substrate having first and second areas; an STI isolation region being made of an isolation trench formed in the semiconductor substrate and an insulating film burying the isolation trench and defining a plurality of active regions in the first and second areas; a first... Agent: Fujitsu Semiconductor Limited
20110244651 - Method and device for alternately contacting two wafers: A method and device for alternatively contacting two wafer-like component composite arrangements, in which two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined... Agent:
20110244655 - Method for fabricating soi substrate: Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from... Agent: Shin-etsu Chemical Co., Ltd.
20110244654 - Method for manufacturing semiconductor substrate: A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second... Agent: Shin-etsu Chemical Co., Ltd.
20110244653 - Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device: An object of the present invention is to reduce the influence of a foreign substance adhering to a single crystalline semiconductor substrate and manufacture a semiconductor substrate with a high yield. Another object of the present invention is to manufacture, with a high yield, a semiconductor device which has stable... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110244652 - Method of manufacturing soi substrate: An object of the present invention is to provide an SOI substrate including a semiconductor layer which is efficiently planarized. A method for manufacturing an SOI substrate includes a step of irradiating a bond substrate with an accelerated ion to form an embrittlement region; a step of bonding the bond... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110244656 - Integrated circuit device and manufacturing method thereof: It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over... Agent: Semiconductor Energy Laboratory Co., Ltd. .
20110244658 - Crack stops for semiconductor devices: Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped... Agent:
20110244657 - Semiconductor die singulation method: In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in... Agent:
20110244659 - Wafer cutting method and a system thereof: A method for cutting a semiconductor wafer by generating a crack within the wafer, and a system thereof, are provided. The method comprises irradiating a laser beam towards a surface of the wafer and converging the laser beam to form a focal point so that a focal volume defined by... Agent: Agency For Science, Technology And Research
20110244660 - Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device: An object is to provide a manufacturing method of a semiconductor substrate provided with a single crystal semiconductor layer with a surface having a high degree of flatness. Another object is to manufacture a semiconductor device with high reliability by using the semiconductor substrate provided with a single crystal semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110244663 - Forming a compound-nitride structure that includes a nucleation layer: The present invention generally provides apparatus and methods for forming LED structures. In one embodiment, a method for fabricating a compound nitride-based semiconductor structure is provided. The method comprises forming a Group III-nitride buffer layer over one or more substrates in a first processing chamber, transferring the one or more... Agent: Applied Materials, Inc.
20110244661 - Large scale high quality graphene nanoribbons from unzipped carbon nanotubes: A new method is disclosed for large-scale production of pristine few-layer graphene nanoribbons (GNRs) through unzipping of mildly gas-phase oxidized, and, optionally, metal-assisted oxidized, multiwalled and few-walled carbon nanotubes. The method further comprises sonication in an organic solvent. High-resolution transmission electron microscopy revealed nearly atomically smooth edges for narrow GNRs... Agent: The Board Of Trustees Of The Leland Stanford Junior University
20110244665 - Manufacturing method of gan based semiconductor epitaxial substrate: A low-temperature protective layer having AlN is grown on a rare earth perovskite substrate and a first GaN based semiconductor layer having Alx1Ga1-x1N where composition x1 of Al is 0.40≦x1≦0.45 is grown thereon. Then, a second GaN semiconductor layer having Alx2Ga1-x2N where composition x2 of Al is 0≦x2≦0.45 is grown... Agent:
20110244662 - Method of manufacturing graphene by using germanium layer: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.... Agent: Samsung Electronics Co., Ltd.
20110244664 - Method of manufacturing superjunction structure: The present invention discloses a method of manufacturing superjunction structure, which comprises: step 1, grow an N type epitaxial layer on a substrate having a (100) or (110) oriented surface; step 2, etch the N type epitaxial layer to form trenches therein; step 3, fill the trenches by P type... Agent:
20110244666 - Methods of manufacturing stair-type structures and methods of manufacturing nonvolatile memory devices using the same: Methods of manufacturing stair-type structures and methods of manufacturing nonvolatile memory devices using the same. Methods of manufacturing stair-type structures may include forming a plurality of thin layers stacked in plate shapes, forming a mask on an utmost thin layer, patterning the utmost layer using the mask as an etch... Agent: Samsung Electronics Co., Ltd.
20110244667 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device including a nitride semiconductor layer having high-precision thickness is provided. The method includes steps of: forming a gallium nitride (GaN) layer whose main face is a +c face on a substrate; forming a trench by selectively etching down a partial region in the... Agent: Sony Corporation
20110244668 - Semiconductor device and manufacturing process therefor: A process for manufacturing a semiconductor device, in which a current flows in a deflected part that includes a semiconductor, includes forming a straight beam having a doubly-clamped beam structure that includes the semiconductor by forming a void under the beam, filling the void with a liquid, and contacting a... Agent: Nec Corporation
20110244669 - Method for low temperature ion implantation: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to... Agent: Advanced Ion Beam Technology, Inc.
20110244671 - Method for fabricating a iii-nitride semiconductor device: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.... Agent: International Rectifier Corporation
20110244672 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device including forming a mask layer on a polycrystalline silicon film formed on a semiconductor substrate via an insulating film; forming a dense pattern and a sparse pattern on the mask layer to form a mask; etching the polycrystalline silicon film with the mask... Agent: Kabushiki Kaisha Toshiba
20110244670 - Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material: In a replacement gate approach, the exposure of the placeholder material of the gate electrode structures may be accomplished on the basis of an etch process, thereby avoiding the introduction of process-related non-uniformities, which are typically associated with a complex polishing process for exposing the top surface of the placeholder... Agent: Globalfoundries Inc.
20110244673 - Method for fabricating semiconductor device with buried gates: A method for fabricating a semiconductor device includes: forming a thin film over trenches by using a first source gas and a first reaction gas; performing a first post-treatment on the thin film by using a second reaction gas; and performing a second post-treatment on the thin film by using... Agent:
20110244674 - Method of forming a plurality of spaced features: A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask... Agent:
20110244675 - Structure and method of forming pillar bumps with controllable shape and size: A structure and method of forming pillar bumps with controllable shape and size are provided, which use polishing planarization technology to eliminate shape difference among pillar bumps on a wafer and die, thus yield the pillar bumps with design shape and size.... Agent: Jung-tang Huang
20110244676 - Chemical mechanical polishing (cmp) processing of through-silicon via (tsv) and contact plug simultaneously: A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110244677 - Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus: A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating... Agent: Fujitsu Semiconductor Limited
20110244678 - Semiconductor process: A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the... Agent: United Microelectronics Corp.
20110244679 - Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces: Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling... Agent: Globalfoundries Inc.
20110244680 - Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices: A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal-containing... Agent: Tokyo Electron Limited
20110244682 - Atomic layer deposition of tungsten materials: Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process... Agent:
20110244681 - Method of forming a tantalum-containing layer on a substrate: b
20110244683 - Fabricating voids using slurry protect coat before chemical-mechanical polishing: A semiconductor structure is fabricated with a void such as a line, contact, via or zia. To prevent slurry particles from falling into and remaining in a void during a chemical-mechanical planarization process, a protective coat is provided in the void to trap the slurry particles and limit an extent... Agent:
20110244684 - Polishing liquid and polishing method: s
20110244685 - Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal: wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the... Agent:
20110244686 - Inorganic rapid alternating process for silicon etch: A method for etching features into a silicon substrate disposed below a mask in a plasma processing chamber is provided. The silicon substrate is etched through the mask comprising a plurality of cycles, wherein each cycle comprises a sidewall deposition phase and an etch phase. The sidewall deposition phase comprises... Agent: Lam Research Corporation
20110244687 - Semiconductor device manufacturing method: In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes... Agent: Denso Corporation
20110244689 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the... Agent: Samsung Electronics Co., Ltd.
20110244688 - Method of producing mask: According to one embodiment, a method of producing a mask includes: a step of forming a pattern on a substrate; a step of forming a first film that covers the top surface and side surface of the pattern and contains a first material; a step of forming a second film... Agent: Kabushiki Kaisha Toshiba
20110244690 - Combinatorial plasma enhanced deposition and etch techniques: According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is... Agent:
20110244691 - Etching processing method: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting... Agent: Tokyo Electron Limited
20110244692 - Method for forming a nano-textured substrate: A method for forming a nano-textured surface on a substrate is disclosed. An illustrative embodiment of the present invention comprises dispensing of a nanoparticle ink of nanoparticles and solvent onto the surface of a substrate, distributing the ink to form substantially uniform, liquid nascent layer of the ink, and enabling... Agent: The Board Of Trustees Of The Leland Stanford Junior University
20110244693 - Component for semiconductor processing apparatus and manufacturing method thereof: A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium,... Agent:
20110244694 - Depositing conformal boron nitride films: A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing... Agent:
20110244695 - Uv-curable inorganic-organic hybrid resin and method for preparation thereof: The present invention relates to a method for preparation of an ultraviolet (UV)-curable inorganic-organic hybrid resin containing about or less than 4% volatiles and less than 30% organic residues. The UV-curable inorganic-organic hybrid resin obtained according to this method can be UV-cured within a markedly very short time and enables,... Agent: Soreq Nuclear Research CenterPrevious industry: Chemistry: analytical and immunological testing
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