|Semiconductor device manufacturing: process patents - Monitor Patents|
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Semiconductor device manufacturing: process June invention type 06/11Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 06/30/2011 > 95 patent applications in 74 patent subcategories. invention type
20110159609 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device includes: forming first conductive layer on semiconductor substrate; forming a magnetic film on the first conductive layer; forming second conductive layer on the magnetic film; forming a first mask layer on the second conductive layer; patterning the second conductive layer; patterning the magnetic... Agent: Fujitsu Semiconductor Limited
20110159610 - Polycrystalline silicon as an electrode for a light emitting diode and method of making the same: Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode... Agent: The Hong Kong University Of Science And Technology
20110159612 - Method for fabricating led chip comprising reduced mask count and lift-off processing: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention,... Agent: Lextar Electronics Corp.
20110159613 - Method for fabricating led chip comprising reduced mask count and lift-off processing: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention,... Agent: Lextar Electronics Corp.
20110159614 - Method for fabricating led chip comprising reduced mask count and lift-off processing: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention,... Agent: Lextar Electronics Corp.
20110159611 - Method for manufacturing soi substrate and method for manufacturing semiconductor device: A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110159617 - Dual layer color-center patterned light source: A method of fabricating a color laser, comprising growing a first thin layer of ionic crystal on a substrate. The crystal can comprise many types of ionic crystals, such as sodium chloride or potassium chloride. A second thin layer of a different type of ionic crystal can be deposited above... Agent: Kulite Semiconductor Products, Inc.
20110159615 - Led units fabrication method: A method for fabricating a plurality of individual light emitting diode units includes forming a GaN epitaxial layer on a sapphire substrate, forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units, forming a reflective layer... Agent: Hon Hai Precision Industry Co., Ltd.
20110159616 - Method of manufacturing light emitting diode: A method for making a light emitting diode is provided, which includes first providing a light emitting diode chip. The light emitting diode chip includes a substrate and a p-type semiconductor layer, an active layer and an n-type semiconductor layer sequentially formed on the substrate. And then sections with different... Agent: Hon Hai Precision Industry Co., Ltd.
20110159619 - Method for manufacturing display device: One object is to provide a method for manufacturing a display device in which shift of the threshold voltage of a thin film transistor including an oxide semiconductor layer can be suppressed even when ultraviolet light irradiation is performed in the process for manufacturing the display device. In the method... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110159618 - Method for manufacturing oxide thin film transistor and method for manufacturing display device: A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a... Agent: Prime View International Co., Ltd.
20110159620 - Method to form semiconductor laser diode: The process of the present invention to form a mask made of inorganic material containing silicon reduces the plasma damage induced in the semiconductor layers due to the plasma-ashing. The semiconductor material is heat-treated at a high temperature after the growth thereof to form an oxide layer positively in the... Agent: Sumitomo Electric Industries, Ltd.
20110159621 - Manufacturing method for light emitting device: A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to the sapphire substrate layer, thereby performing... Agent: Disco Corporation
20110159622 - Thin film transistor and method for manufacturing a display panel: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer,... Agent:
20110159623 - Method for fabricating led chip comprising reduced mask count and lift-off processing: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention,... Agent: Lextar Electronics Corp.
20110159624 - Method of forming light-emitting diode: A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer... Agent:
20110159625 - Organic el display: An organic EL element includes a pair of electrodes and an emitting layer interposed therebetween. The emitting layer is made of a mixture containing a host material and a dopant material. In the emitting layer, a concentration profile of the dopant material along a thickness direction includes at least two... Agent:
20110159626 - Micro-electro-mechanical device and method of manufacturing the same: The present invention improves mechanical strength of a micro-electro-mechanical device (MEMS) having a movable portion to improve reliability. In a micro-electro-mechanical device (MEMS) having a movable portion, a portion which has been a hollow portion in the case of a conventional structure is filled with a filler material. As the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110159627 - Method for fabricating a sensor: A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment... Agent:
20110159628 - System and method for producing flexible dye-sensitized solar cells by a roll-to-roll printing process: A system and a method for mass production of Dye-Sensitized Solar Cells at low cost via a continuous roll-to-roll process. While a flexible conductive substrate is constantly in transit on a conveyor, a titanium dioxide (TiO2) layer is: formed by spray printing; sintered; dyed in a dye tank, with or... Agent:
20110159630 - Image sensor module and method of manufacturing the same: An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting... Agent: Hynix Semiconductor Inc.
20110159629 - Method of forming three-terminal solar cell array: A method for manufacturing three-terminal solar cell array is provided. In this method, only four major scribing or etching steps are needed to expose the three conductive layers of the three-terminal solar cell and isolate the individual solar cells.... Agent: Du Pont Apollo Limited
20110159631 - Method of fabricating backside illuminated image sensor: A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate having a front surface and a back surface; forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface;... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110159632 - Method for manufacturing a solid-state image capturing element: The deposition temperature of the HDP film can be controlled to 365° C. or below, preferably within a temperature range of 335° C. to 365° C., and more preferably 335° C. to 350° C., or at 350° C. Thus, it becomes possible to suppress signal deterioration due to dark current... Agent: Sharp Kabushiki Kaisha
20110159633 - Paste and manufacturing method of solar cell using the same: Disclosed are a paste and a method for manufacturing a solar cell through screen printing said paste. The paste contains inorganic powder; an organic solvent; and a binder, and the inorganic powder has a tap density of 0.01 to 20 g/cm3. An etching mask pattern formed using said paste has... Agent:
20110159635 - Method for forming deep isolation in imagers: An image sensor having an imaging area that includes a substrate layer and a plurality of pixels formed therein. Multiple pixels each include a photodetector formed in the substrate layer. Isolation layers are formed in the substrate layer by performing a series of implants of one or more dopants of... Agent:
20110159634 - Method of manufacturing back side illuminated imaging device: In one embodiment, a method of manufacturing a back side illuminated imaging device includes forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate, and bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device. The method further... Agent:
20110159636 - Edge deletion of thin-layer solar modules by etching: The present invention relates to a fast and inexpensive method which can be carried out locally for the wet-chemical edge deletion of “solar modules” by applying etching pastes which are suitable for this purpose and, when the reaction is complete, removing the paste residues or cleaning the substrate surface in... Agent: Merck Patent Gesellschaft Mit Beschrankter Haftung
20110159637 - Semiconductor device: A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is formed on circuit element area. A Tantalum film (which is generally made... Agent: Texas Instruments Incorporated
20110159638 - Method for making a chip package: The present invention relates to a method for making a chip package. The method includes the following steps: (a) providing a substrate having at least one conductive via; (b) disposing the substrate on a carrier; (c) removing part of the substrate, so as to expose the conductive via, and form... Agent:
20110159639 - Method for making a stackable package: The present invention relates to a method for making a stackable package. The method includes the following steps: (a) providing a first carrier; (b) disposing at least one chip on the first carrier; (c) forming a molding compound so as to encapsulate the chip; (d) removing the first carrier; (e)... Agent:
20110159641 - Method of manufacturing semiconductor device: In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control... Agent: Renesas Electronics Corporation
20110159640 - Multiple integrated circuit die package with thermal performance: A method of assembling a multi-die package is achieved. A heat spreader is disposed on a printed circuit substrate. At least one integrated circuit die is disposed on a top side of the heat spreader and at least one other integrated circuit die is disposed on a bottom side of... Agent: Compass Technology Co., Inc.
20110159642 - Tape for holding chip, method of holding chip-shaped workpiece, method of manufacturing semiconductor device using tape for holding chip, and method of manufacturing tape for holding chip: The present invention aims to provide a tape for holding a chip that makes pasting and peeling of a chip-shaped workpiece easy. It is a tape for holding a chip having a configuration in which a pressure-sensitive adhesive layer is formed on a base material, wherein the pressure-sensitive adhesive layer... Agent:
20110159643 - Fabrication method of semiconductor package structure: A fabrication method of a semiconductor package structure includes: patterning a metal plate having first and second surfaces; forming a dielectric layer on the metal plate; forming a metal layer on the first surface and the dielectric layer; forming metal pads on the second surface, the metal layer having a... Agent: Siliconware Precision Industries Co., Ltd.
20110159644 - Semiconductor device and a method of manufacturing the same: A semiconductor device has a package substrate having, at the periphery of the main surface thereof, a plurality of bonding leads disposed in a row, a semiconductor chip mounted inside of the row of the bonding leads on the main surface of the package substrate, wires for connecting pads of... Agent: Renesas Electronics Corporation
20110159645 - Methods of forming a memory array with a pair of memory-cell strings to a single conductive pillar: A method of forming a memory array includes forming first and second strings of serially-coupled memory cells respectively on first and second sides of a conductive pillar. Forming the first string of memory cells includes forming a first control gate on the first side of the conductive pillar and interposing... Agent: Micron Technology, Inc.
20110159646 - Thin film transistors and methods of manufacturing the same: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel... Agent:
20110159647 - Mask pattern, method of fabricating thin film transistor, and method of fabricating organic light emitting display device using the same: A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern includes a plurality of regions,... Agent:
20110159648 - Methods of fomring array of nanoscopic mosfet transistors: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to... Agent:
20110159649 - Non-volatile storage with substrate cut-out and process of fabricating: Shallow trench isolation regions are positioned between NAND strings (or other types of non-volatile storage). These isolation regions include sections that form concave cut-out shapes in the substrate for the NAND string (or other types of non-volatile storage). The floating gates (or other charge storage devices) of the NAND strings... Agent:
20110159650 - Dmos type semiconductor device and method for manufacturing the same: A DMOS type semiconductor device and a method for manufacturing the same are provided. An isolation oxide layer with an ion implantation opening is formed on a semiconductor. A gate oxide film is formed on the semiconductor within the ion implantation opening. A gate is formed on the isolation oxide... Agent:
20110159652 - Fabricating method of vertical transistor: A substrate is provided. A pillar protruding out of a surface of the substrate is already formed on the substrate, and a patterned layer is already formed on the pillar. The pillar includes a lower part, a channel region, and an upper part from bottom to top, and the lower... Agent: Nanya Technology Corporation
20110159651 - Method of manufacturing semiconductor device: The invention provides a method of manufacturing a semiconductor device at low cost in which the gate insulation film having a trench structure is not damaged by arsenic ions when the emitter layer or the like is formed and the insulation breakdown voltage is enhanced. A gate electrode made of... Agent: Sanyo Semiconductor Co., Ltd.
20110159653 - Semiconductor integrated circuit device and process for manufacturing the same: A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of... Agent:
20110159654 - Enhanced confinement of high-k metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloy: When forming the strain-inducing semiconductor alloy in one type of transistor of a sophisticated semiconductor device, superior thickness uniformity of a dielectric cap material of the gate electrode structures may be achieved by forming encapsulating spacer elements on each gate electrode structure and providing an additional hard mask material. Consequently,... Agent:
20110159655 - Stress enhanced transistor devices and methods of making: Stress enhanced transistor devices and methods of fabricating the same are provided. In one embodiment, a transistor device comprises: a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers, wherein the semiconductor substrate comprises a channel region underneath the gate conductor and recessed regions on opposite... Agent: International Business Machines Corporation
20110159656 - Method for manufacturing a mosfet with a surrounding gate of bulk si: A method for manufacturing a bulk Si nanometer surrounding-gate MOSFET based on a quasi-planar process, including: local oxidation isolation or shallow trench isolation; depositing buffer SiO2 oxide layer/SiN dielectric layer on the bulk Si; electron beam exposure; etching two adjacent slots; depositing SiN sidewalls; isotropically etching Si; dry oxidation; removing... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences
20110159657 - Enhanced integrity of a high-k metal gate electrode structure by using a sacrificial spacer for cap removal: In a process strategy for forming sophisticated high-k metal gate electrode structures in an early manufacturing phase, the dielectric cap material may be removed on the basis of a protective spacer element, thereby ensuring integrity of a silicon nitride sidewall spacer structure, which may preserve integrity of sensitive gate materials... Agent:
20110159658 - Method for fabricating metal-oxide semiconductor transistors: A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate... Agent:
20110159659 - Novel manufacturing approach for collector and n type buried layer of bipolar transistor: This invention disclosed a novel manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that an oxide-nitride-oxide (ONO) sandwich structure is employed instead of oxide-nitride dual layer structure before trench etching. Another aspect is, through the formation of silicon oxide spacer in... Agent:
20110159660 - Methods of forming integrated circuit capacitors having sidewall supports and capacitors formed thereby: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material... Agent:
20110159661 - Nonvolatile memory element and production method thereof and storage memory arrangement: A nonvolatile memory element and associated production methods and memory element arrangements are presented. The nonvolatile memory element has a changeover material and a first and second electrically conductive electrode present at the changeover material. To reduce a forming voltage, a first electrode has a field amplifier structure for amplifying... Agent:
20110159662 - Method for fabricating crown-shaped capacitor: A method for fabricating a crown-shaped capacitor includes providing a first dielectric layer with a protective pillar formed thereover, including a first conductive layer, a protective layer, and a mask layer. A second conductive layer is formed over a sidewall of the protective pillar. A first capacitance layer and a... Agent:
20110159663 - Method for fabricating semiconductor device using spacer patterning technique: A method for fabricating a semiconductor device using optical proximity correction to form high integrated cell patterns that are less prone to bridge defects. The method includes: obtaining a target layout of cell patterns, which form rows in a cell region, and peripheral patterns of a peripheral region; forming oblique... Agent: Hynix Semiconductor Inc.
20110159664 - Method for fabricating semiconductor device with buried gates: A method for fabricating a semiconductor device includes sequentially stacking a pad oxide layer and a hard mask layer over a substrate, forming a device isolation layer over the substrate, forming a capping layer pattern configured to open a first region of the substrate and cover a second region of... Agent:
20110159665 - Method for the preparation of a multi-layered crystalline structure: This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from... Agent: Memc Electronic Materials, Inc.
20110159666 - Deposition systems and methods: Systems, methods, and products made by a deposition process are shown and described. A work piece is supported in a main deposition chamber so that the work piece is positioned above each container of deposition material as the container is moved into and out of the deposition chamber. One or... Agent:
20110159667 - Semiconductor device manufacturing method: A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step... Agent:
20110159668 - Methods for processing silicon on insulator wafers: Methods are provided for etching and/or depositing an epitaxial layer on a silicon-on-insulator structure comprising a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The cleaved surface... Agent: Memc Electronic Materials, Inc.
20110159669 - Method for depositing amorphous silicon thin film by chemical vapor deposition: Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction... Agent: Electronics And Telecommunications Research Instit
20110159671 - Isotopically-enriched boron-containing compounds, and methods of making and using same: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical... Agent: Advanced Technology Materials, Inc.
20110159670 - Method and apparatus of patterning a semiconductor device: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110159672 - Novel manufacturing approach for collector and n type buried layer of bipolar transistor: This invention disclosed a manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that a pseudo buried layer, i.e, collector buried layer, is manufactured by ion implantation and thermal anneal. This pseudo buried layer has a small area, which makes deep trench... Agent:
20110159673 - Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition: Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition.... Agent:
20110159674 - Method of manufacturing nonvolatile memory devices: A method of manufacturing nonvolatile memory devices comprises forming a plurality of floating gates spaced from each other over a semiconductor substrate, forming a dielectric layer on a surface of the floating gates, forming a capping layer on a surface of the dielectric layer, adding impurities to the capping layer,... Agent: Hynix Semiconductor Inc.
20110159675 - Process for forming schottky rectifier with ptni silicide schottky barrier: A process for forming a Schottky barrier to silicon to a bather height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop... Agent: Vishay-siliconix
20110159676 - Fabricating low contact resistance conductive layer in semiconductor device: A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to... Agent: Hynix Semiconductor Inc.
20110159677 - Method of fabricating landing plug contact in semiconductor memory device: A landing plug contact in a semiconductor memory device is fabricated by: forming gate spacer layers at sides of the gate stacks to define a first contact hole and a second contact hole, where a landing plug contact will be formed between the gate spacer layers of the first contact... Agent: Hynix Semiconductor Inc.
20110159678 - Method to form a semiconductor device having gate dielectric layers of varying thicknesses: A method for fabricating an integrated circuit device is disclosed. An exemplary method can include providing a substrate having a first region, a second region, and a third region; and forming a first gate structure in the first region, a second gate structure in the second region, and a third... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110159679 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is provided. A semiconductor substrate is etched to form a trench, a gate electrode is buried in the trench, an etch-back process thereon is performed to form a buried gate, and an insulating layer is formed at the entire surface with the trench.... Agent: Hynix Semiconductor Inc.
20110159680 - Method of forming a dielectric layer and method of manufacturing a semiconductor device using the same: In a method of forming an aluminum oxide layer, an aluminum source gas and a dilution gas can be supplied into a chamber through a common gas supply nozzle so that the aluminum source gas may be adsorbed on a substrate in the chamber. A first purge gas can be... Agent: Samsung Electronics Co., Ltd.
20110159681 - Nonvolatile memory device and method of manufacturing the same: A method of manufacturing a nonvolatile memory device includes forming a tunnel insulating layer over a semiconductor substrate, forming tunnel insulating patterns to expose portions of the semiconductor substrate by removing portions of the tunnel insulating layer formed over isolation regions of the semiconductor substrate, forming a first conductive layer... Agent: Hynix Semiconductor Inc.
20110159682 - Methods of manufacturing memory devices: A method of manufacturing a memory device is disclosed. The method includes providing a substrate, forming a number of memory sectors on the substrate, wherein each of the memory sectors is coupled to an adjacent one via a first diffused region in the substrate and is coupled to another adjacent... Agent: Macronix International Co., Ltd.
20110159683 - Method of forming a high density structure: The invention relates to a method of forming a high density structure comprising the steps of providing a substrate (2) wherein the high density structure is to be formed with a release liner (3), said release liner being self-removable; forming at least one cavity (5a, 5b) in the substrate through... Agent:
20110159684 - Sram cell with t-shaped contact: An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. The drain connecting segments may also... Agent: Texas Instruments Incorporated
20110159685 - Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions: Some embodiments include methods of forming low k dielectric regions between electrically conductive lines. A construction may be formed to have a plurality of spaced apart electrically conductive lines, and to have sacrificial material between the electrically conductive lines. The sacrificial material may be removed. Subsequently, electrically insulative material may... Agent: Micron Technology, Inc.
20110159686 - Method for forming fine pattern having variable width and method for manufacturing semiconductor device using the same: A method for forming a fine pattern having a variable width by simultaneously using an optimal focused electron beam and a defocused electron beam in a light exposure process Includes, after forming a first film on a substrate, forming a first film pattern including a first level area and a... Agent: Samsung Electronics Co., Ltd.
20110159687 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes forming a plurality of plugs over a die region and an edge bead removal (EBR) region of a wafer, forming metal lines coupled to the plugs, removing the metal lines in the EBR region, forming an inter-layer dielectric layer over the wafer,... Agent:
20110159689 - Printing plate and method for fabricating the same: A printing plate and method for fabricating the same is disclosed. A metal layer is first formed on a glass substrate. The metal layer is then patterned in a predetermined shape. The glass substrate is next etched to a predetermined depth using the patterned metal layer as a mask and... Agent: Lg Display Co., Ltd.
20110159688 - Selective metal deposition over dielectric layers: Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is... Agent: Micron Technology, Inc.
20110159690 - Depositing tungsten into high aspect ratio features: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is... Agent:
20110159691 - Method for fabricating fine patterns of semiconductor device utilizing self-aligned double patterning: A method for making a semiconductor device includes forming a first mask pattern on a device layer, forming a second mask pattern on the first mask pattern, etching the device layer not covered by the first and second mask patterns to thereby form a first trench, trimming the first mask... Agent:
20110159692 - Method for fabricating semiconductor device: A method for fabricating semiconductor device includes forming a nitride pattern and a hard mask pattern over a substrate, forming a trench by etching the substrate using the hard mask pattern as an etch barrier, forming an oxide layer filling the trench, performing a planarization process on the oxide layer... Agent:
20110159697 - Etching method and etching apparatus: There are provided an etching method and an etching apparatus suitable for etching an antireflection coating layer by using a resist film as a mask. The etching method includes forming the antireflection coating layer (Si-ARC layer) on an etching target layer; forming a patterned resist film (ArF resist film) on... Agent: Tokyo Electron Limited
20110159693 - Method for fabricating hole pattern: A method for fabricating a hole pattern includes forming a first hard mask layer over an etch target layer, forming a second hard mask pattern over the first hard mask layer, which are patterned to be a line type in a first direction and have a selective etch ratio to... Agent:
20110159694 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes: providing a substrate, forming an insulation layer, an adhesive layer, and a photoresist pattern, etching the adhesive layer using the photoresist pattern as an etch barrier, and wet etching the insulation layer using the etched adhesive layer and the photoresist pattern as... Agent:
20110159695 - Method for manufacturing mask: Openings are formed in first and second mask layers. Next, diameter of the opening in the second mask layer is enlarged so that the diameter of the opening in the second mask layer becomes larger by a length X than diameter of the opening in the first mask layer. Thereafter,... Agent: Elpida Memory, Inc.
20110159696 - Method of manufacturing semiconductor devices: A method of manufacturing semiconductor devices comprises forming an etch target layer and auxiliary patterns over a semiconductor substrate, forming spacers on sidewalls of the auxiliary patterns, removing the auxiliary patterns, performing an etch process to change both corners of upper portions of the spacers to be symmetrical to one... Agent:
20110159698 - Photoresist processing methods: A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form... Agent: Micron Technology, Inc.
20110159699 - Line-edge roughness improvement for small pitches: A method for mitigating line-edge roughness on a semiconductor device. The method includes line-edge roughness mitigation techniques in accordance with embodiments of the present invention. The techniques include: reducing the SiON film thickness below a conventional thickness; increasing the photoresist thickness above a conventional thickness; etching the SiON film with... Agent:
20110159701 - Chemical liquid supply nozzle and chemical liquid supply method: The present disclosure provides a chemical liquid supply nozzle capable of suppressing the drying process of chemical liquid with a low cost. The chemical liquid supply nozzle is provided with a cutoff valve and a suction unit that sucks chemical liquid to a suction flow path at a nozzle main... Agent: Tokyo Electron Limited
20110159700 - Film formation system and film formation method: A film formation system and a film formation method are disclosed. The film formation method includes the following steps performed in the film formation system that includes a container containing liquid, a water draining means for draining the liquid, a ring-shaped component installed in the container, and a carrying component... Agent: Aurotek Corportion
20110159702 - Film deposition apparatus and film deposition method: A film deposition apparatus for depositing a film on a substrate by performing a cycle of alternately supplying at least two kinds of reaction gases that react with each other on the substrate to produce a layer of a reaction product in a vacuum chamber is disclosed. The film deposition... Agent: Tokyo Electron Limited
20110159703 - Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio: Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in... Agent: Applied Materials, Inc.06/23/2011 > 93 patent applications in 70 patent subcategories. invention type
20110151588 - Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques: Releasable semiconductor dice are deposited with a magnetic layer and held by magnetic forces to a magnetic or electromagnetic transfer stamp for the transfer of the dice from a host substrate directly or indirectly to a target substrate.... Agent: Cooledge Lighting, Inc.
20110151587 - Method of producing an integrated micromagnet sensor assembly: A method of integrating a permanent bias magnet within a magnetoresistance sensor comprising depositing an alternating pattern of a metal material and a semiconductor material on or within a surface of an insulating substrate; depositing a mask on the surface of the insulating substrate to create an opening above the... Agent: General Electric Company
20110151590 - Apparatus and method for low-k dielectric repair: A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum... Agent: Applied Materials, Inc.
20110151591 - Photovoltaic cell manufacturing method: The present invention provides a photovoltaic cell manufacturing method, the photovoltaic cell including: a photoelectric converter in which at least a first electrode layer, a semiconductor layer, and a second electrode layer are stacked in layers in this order being formed on a face of a substrate; and a connection... Agent: Ulvac, Inc.
20110151593 - Manufacturing method of semiconductor substrate: A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110151592 - Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing: Methods are disclosed for monitoring the amount of metal contamination imparted during wafer processing operations such as polishing and cleaning. The methods include subjecting a silicon-on-insulator structure to the semiconductor process, precipitating metal contamination in the structure and delineating the metal contaminants.... Agent: Memc Electronic Materials, Inc.
20110151594 - Method and system for controlled isotropic etching on a plurality of etch systems: A method for forming identical isotropic etch patterns in an etch system is disclosed. The method comprises providing a wafer paddle, a wafer, a plurality of identical etch systems, utilizing identical etch recipes within each of the plurality of etch systems, providing a fixed temperature stability time FTST for each... Agent: Micrel, Inc.
20110151595 - Fabrication method for semiconductor device: A semiconductor device fabrication method can improve yield of semiconductor devices and decrease (or prevent) waste of non-defective semiconductor chips. This fabrication method has a step of performing characteristic inspection after packaging a semiconductor chip every time a semiconductor chip layer is formed. The fabrication method makes another semiconductor chip... Agent:
20110151597 - Analysis method for semiconductor device: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a... Agent: United Microelectronics Corp.
20110151596 - Cascaded-based de-embedding methodology: An embodiment is a method for de-embedding. The method comprises forming a primary structure in a semiconductor chip and forming an auxiliary structure in the semiconductor chip. The auxiliary structure replicates a first portion of the primary structure. The method further comprises determining a transmission matrix for each of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110151598 - Method for manufacturing a substrate for liquid-ejecting heads and a liquid-ejecting head: A method for manufacturing a substrate for liquid-ejecting heads includes etching a surface of a silicon substrate using a first etchant, with a silicon oxide layer as a mask, to form a depression as a part of a liquid supply port, and subsequently etching at least the silicon oxide layer... Agent: Canon Kabushiki Kaisha
20110151599 - Vapor deposition apparatus having improved carrier gas supplying structure and method of manufacturing an organic light emitting display apparatus by using the vapor deposition apparatus: A vapor deposition apparatus includes a canister configured to contain a vapor deposition source, the canister including a gas inlet and a gas outlet opposite to each other, a heater configured to heat the canister, a chamber in fluid communication with the canister, the chamber being configured to contain a... Agent:
20110151601 - Crystallization method, method of manufacturing thin film transistor, and method of manufacturing display device: A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method comprises: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an... Agent: Samsung Mobile Display Co., Ltd.
20110151600 - Method of manufacturing display device: In a method of manufacturing a display device, a first insulating layer is formed on a semiconductor pattern. Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps... Agent: Samsung Mobile Display Co., Ltd.
20110151603 - Light emitting apparatus and method of manufacturing the same: A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110151602 - Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate: Semiconductor material is formed on a host substrate of a material exhibiting optical transparency with an intervening radiation lift off layer. A transfer device, intermediate substrate or target substrate is brought into adhesive contact with the semiconductor material and the radiation lift off layer is irradiated to weaken it, allowing... Agent: Cooledge Lighting, Inc.
20110151604 - Led packaging method: An LED packaging method provides a package that includes a substrate, a LED chip, a carbon naonotube thin film and an adhesive layer. The LED chip includes an anode and a cathode. The carbon naonotube thin film includes at least two electrically conductive areas spaced from each other. The anode... Agent: Hon Hai Precision Industry Co., Ltd.
20110151606 - Light emitting device and method of manufacture: A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second... Agent:
20110151605 - Method for fabricating color filter using surface plasmon and method for fabricating liquid crystal display device: Discussed are methods for fabricating a color filter using a surface plasmon and a liquid crystal display (LCD) device capable of enhancing a transmittance ratio of an LC panel and simplifying entire processes, by forming a transmissive pattern consisting of a plurality of sub-wavelength holes having a period on a... Agent:
20110151608 - Capacitive micromachined ultrasonic transducer and manufacturing method: The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and... Agent:
20110151609 - Method for forming thin film heat dissipater: The present invention discloses a method of forming Peltier diodes comprising providing a substrate and forming a conductive pattern over the substrate. An isolation layer is formed over the conductive pattern; followed by forming cavities in the isolation layer and refilling a semiconductor layer into the cavities, thereby forming a... Agent:
20110151611 - Method for manufacturing solar cells: Disclosure herein is a method for manufacturing a solar cell. The method comprises the following steps. A substrate is provided. An article having a plurality of protrusions touches the surface of the substrate and thereby forming a plurality of indentations thereon. Subsequently, a transparent conductive layer is formed on the... Agent: Du Pont Apollo Limited
20110151610 - Workpiece patterning with plasma sheath modulation: Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may... Agent: Varian Semiconductor Equipment Associates, Inc.
20110151612 - Method for manufacturing an oled or a blank for forming an oled as well as such a blank or oled: Method for manufacturing an organic light emitting device or a blank for forming therefrom an organic light emitting device as well as such a OLED or blank, the organic light emitting device having a light emitting area with two opposite first sides and two opposite second sides, the method comprising... Agent:
20110151613 - Solid-state image capturing element, method for manufacturing the solid-state image capturing element, and electronic information device: A solid-state image capturing element according to the present invention is provided, in which one or a plurality of light receiving sections for photoelectrically converting an incident light to generate a signal charge is provided on a surface of a semiconductor area or a surface of a semiconductor substrate and... Agent: Sharp Kabushiki Kaisha
20110151614 - Process for producing electrodes for solar cells: The invention relates to a process for producing electrodes for solar cells, the electrode being configured as an electrically conductive layer on a substrate (1) for solar cells, in which, in a first step, a dispersion comprising electrically conductive particles is transferred from a carrier (7) to the substrate (1)... Agent: Basf Se
20110151615 - Bicyclic guanidines, metal complexes thereof and their use in vapor deposition: Bicyclic guanidine compounds are described. Metal bicyclic guanidinate and its use in vapor deposition processes to deposit a metal-containing thin film are also described. Methods of making alkaline earth metal N,N′dialkylacetamidinates or bicyclic guanidinates including dissolution of alkaline earth metal into liquid ammonia followed by addition of a solution of... Agent: President And Fellows Of Harvard College
20110151616 - Mbe growth technique for group ii-vi inverted multijunction solar cells: A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate... Agent: Epir Technologies, Inc.
20110151617 - Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cells: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to scale memory elements, such as implemented in BEOL third dimensional memory technology, independent of operational characteristics. In at least some embodiments, a method to fabricate a non-volatile two-terminal memory... Agent: Unity Semiconductor Corporation
20110151619 - Method of forming metal oxide film and apparatus for forming metal oxide film: A method of forming a metal oxide film, which can lower a temperature of a heat treatment of a substrate and also can form a metal oxide film having a low resistance value without limiting the kind of the metal oxide film to be formed. The method of forming a... Agent: Toshiba Mitsubishi-electric Industrial Sys. Corp.
20110151618 - Semiconductor device and manufacturing method thereof: An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110151620 - Method for manufacturing chips: A method for manufacturing chips (1, 2), in which at least one diaphragm (11, 12) is produced in the surface layer of a semiconductor substrate (10) spanning a cavity (13). The functionality of the chip (1, 2) is then integrated into the diaphragm (11, 12). In order to separate the... Agent:
20110151621 - Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods: Microfeature workpieces having interconnects and conductive backplanes and associated systems and methods are disclosed herein. One such device includes a semiconductor substrate having integrated circuitry and terminals electrically coupled to the integrated circuitry. The device also includes electrically conductive interconnects extending through at least a portion of the semiconductor substrate... Agent: Micron Technology, Inc.
20110151622 - Method of manufacturing semiconductor device: The present invention provides a method of manufacturing a semiconductor device in which a plurality of wires are connected to the same electrode on a semiconductor chip, the method making it possible to inhibit an increase in electrode area. First, ball bonding is performed to compressively bond a first ball... Agent: Panasonic Corporation
20110151623 - Exposed mold: A method for forming a semiconductor device can include providing a patterned layer of mold compound having a plurality of individual mold compound structures overlying a base film. The plurality of mold compound structures are aligned with a plurality of semiconductor dice to interpose the individual mold compound structures between... Agent:
20110151624 - Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die: A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form... Agent:
20110151625 - Heat-resistant adhesive sheet for substrateless semiconductor package fabrication and method for fabricating substrateless semiconductor package using the adhesive sheet: The present invention is intended to solve the following problems with a method for fabricating a substrateless semiconductor package using an adhesive sheet as a temporary fixing supporter. A chip can be displaced from a specified position by pressure during resin encapsulation because the chip is not properly held by... Agent: Nitto Denko Corporation
20110151626 - Method of making a semiconductor chip assembly with a post/base/post heat spreader and asymmetric posts: A method of making a semiconductor chip assembly includes providing first and second posts, first and second adhesives and a base, wherein the first post extends from the base in a first vertical direction into a first opening in the first adhesive and is located within a periphery of the... Agent:
20110151627 - Overcoming laminate warpage and misalignment in flip-chip packages: An apparatus, system, and method are disclosed for connecting an integrated circuit device to a substrate. A plurality of standard diameter pillars and three or more increased diameter pillars are disposed on an integrated circuit device. The increased diameter pillars have a diameter that is greater than the standard diameter... Agent: International Business Machines Corporation
20110151628 - Configuration of gate to drain (gd) clamp and esd protection circuit for power device breakdown protection: A semiconductor power device supported on a semiconductor substrate comprising a plurality of transistor cells each having a source and a drain with a gate to control an electric current transmitted between the source and the drain. The semiconductor further includes a gate-to-drain (GD) clamp termination connected in series between... Agent: Alpha And Omega Semiconductor Incorporated
20110151629 - Recessed channel negative differential resistance-based memory cell: Disclosed herein is an improved recessed thyristor-based memory cell. The disclosed cell comprises in one embodiment a conductive plug recessed into the bulk of the substrate, which is coupled to or comprises the enable gate of the cell. Vertically disposed around this recessed gate is a thyristor, whose anode (source;... Agent: Micron Technology, Inc.
20110151630 - Display element manufacturing method and manufacturing apparatus, thin film transistor manufacturing method and manufacturing apparatus, and circuit forming apparatus: The thin film transistor manufacturing apparatus comprises a surface modification layer forming means, which forms a surface modification layer on a substrate, an illuminating part, which irradiates light that includes ultraviolet rays, a mask, on which the patterns of the source electrode and the drain electrode are drawn, a projection... Agent:
20110151631 - Thin film transistor substrate and method of manufacturing thereof: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate... Agent: Samsung Electronics Co., Ltd.
20110151632 - Method for forming semiconductor device: A method for forming a semiconductor device includes: etching a hard mask layer and a conductive layer formed on a semiconductor substrate, a lower structure being formed on the semiconductor substrate; forming a sacrificial insulating layer at upper parts of the etched hard mask layer and the etched conductive layer... Agent: Hynix Semiconductor Inc.
20110151634 - Lateral drain-extended mosfet having channel along sidewall of drain extension dielectric: An integrated circuit (200) includes one of more transistors (210) on or in a substrate (10) having semiconductor surface layer, the surface layer having a top surface. At least one of the transistors are drain extended metal-oxide-semiconductor (DEMOS) transistor (210). The DEMOS transistor includes a drift region (14) in the... Agent: Texas Instruments Incorporated
20110151633 - Methods of forming a conductive layer structure and methods of manufacturing a recessed channel transistor including the same: In a method of forming a conductive layer structure and a method of manufacturing a recess channel transistor, a first insulating layer and a first conductive layer are sequentially formed on a substrate having a first region a second region and the substrate is exposed in a recess-forming area in... Agent:
20110151635 - High temperature gate replacement process: A method for fabricating an integrated circuit device is disclosed. An exemplary method comprises performing a gate replacement process to form a gate structure, wherein the gate replacement process includes an annealing process; after the annealing process, removing portions of a dielectric material layer to form a contact opening, wherein... Agent:
20110151636 - Method for angular doping of source and drain regions for odd and even nand blocks: A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The source implantation can include n-type and p-type... Agent: Sandisk Corporation
20110151637 - Method for improving the thermal stability of silicide: An embodiment of the invention is a method of making a transistor by performing an ion implant on a gate electrode layer 110. The method may include forming an interface layer 200 over the semiconductor substrate 20 and performing an anneal to create a silicide 190 on the top surface... Agent: Texas Instruments Incorporated
20110151638 - Method of fabricating semiconductor device: There is provided a method of fabricating a semiconductor including: forming a first and a second bipolar transistors on a semiconductor substrate; forming a dummy layer on, or on the periphery of, at least one region of the emitter region, the base region, or the collector region of the second... Agent: Oki Semiconductor Co., Ltd.
20110151639 - Semiconductor device, method of fabricating the same, semiconductor module, electronic circuit board, and electronic system including the device: Provided are a semiconductor device, a method of fabricating the same, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device includes a lower electrode, a rutile state lower vanadium dioxide layer on the lower electrode, a rutile state titanium oxide on... Agent:
20110151641 - Method of forming a semiconductor device: A method of forming a semiconductor device includes the following processes. A first groove is formed in a semiconductor substrate. An insulating film is formed in the first groove. An interlayer insulating film is formed over the semiconductor substrate. A removing process is performed to remove a part of the... Agent: Elpida Memory, Inc.
20110151642 - Semiconductor device including high voltage and low voltage mos devices: Methods and devices for forming both high-voltage and low-voltage transistors on a common substrate using a reduced number of processing steps are disclosed. An exemplary method includes forming at least a first high-voltage transistor well and a first low-voltage transistor well on a common substrate separated by an isolation structure... Agent: Samsung Electronics Co., Ltd.
20110151643 - Method for manufacturing bonded wafer: A method for manufacturing a bonded wafer by forming an ion implanted layer in a bond wafer; bonding an ion implanted surface of the bond wafer to a surface of a base wafer directly or through a silicon oxide film; and performing a delamination heat treatment. After the formation of... Agent: Shin-etsu Handotai Co., Ltd.
20110151644 - Process for fabricating a heterostructure with minimized stress: A process for fabricating a heterostructure by bonding a first wafer to a second wafer, with the first wafer having a thermal expansion coefficient that is lower than the thermal expansion coefficient of the second wafer, and conducting at least one bond-strengthening annealing step. After the bonding step and before... Agent:
20110151645 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device, including a first step of forming a first electrode pad at an external edge part of a semiconductor chip mounting area of a supporting board; a second step of fixing a rear surface of a semiconductor chip having a main surface, the main... Agent: Shinko Electric Industries Co., Ltd.
20110151648 - Apparatus and method for transformation of substrate: A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap material. An improved component such... Agent:
20110151649 - Method for fabricating a semiconductor device: A method for fabricating a semiconductor device includes forming a first semiconductor layer on a front side of the semiconductor substrate. Additional semiconductor layers may be formed on a font side of the first semiconductor layer. The substrate is subsequently removed. In some embodiments, one or more additional semiconductor layers... Agent: Purdue Research Foundation
20110151646 - Microwave annealing method for device processing with plastic substrate: The present invention provides a microwave annealing method for a plastic substrate. The method comprises pulsed microwave annealing to an organic photo-voltaic device to avoid warpage and degradation of the plastic substrate. Utilizing pulsed microwave annealing method can improve the wettability of the organic layer on the plastic substrate verified... Agent:
20110151647 - Semiconductor substrate, semiconductor device, and manufacturing methods thereof: Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer,... Agent: Seoul Opto Device Co., Ltd.
20110151650 - Semiconductor layer structure and method for fabricating a semiconductor layer structure: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a... Agent: Siltronic Ag
20110151651 - Method for forming integrated circuits with aligned (100) nmos and (110) pmos finfet sidewall channels: A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins... Agent: Texas Instruments Incorporated
20110151652 - Method for fabricating semiconductor device and plasma doping system: An impurity is introduced into a fin-type semiconductor region (102) formed on a substrate (100) using a plasma doping process, thereby forming an impurity-introduced layer (105). Carbon is introduced into the fin-type semiconductor region (102) using a plasma doping process to overlap at least a part of the impurity-introduced layer... Agent:
20110151654 - Semiconductor device manufacturing method: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor... Agent: Denso Corporation
20110151653 - Spin-on formulation and method for stripping an ion implanted photoresist: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked... Agent: International Business Machines Corporation
20110151655 - Metal gate fill and method of making: The present disclosure provides various methods of fabricating a semiconductor device. A method of fabricating a semiconductor device includes providing a semiconductor substrate and forming a gate structure over the substrate. The gate structure includes a first spacer and a second spacer formed apart from the first spacer. The gate... Agent:
20110151656 - Semiconductor device and method of fabricating the same: A method of forming a semiconductor device, the method including the following processes. A groove is formed in a semiconductor substrate. A gate electrode is formed in the groove. A boron-phosphorus silicate glass film is formed over the gate electrode. An etching process is performed using the boron-phosphorus silicate glass... Agent: Elpida Memory, Inc.
20110151657 - Method for fabricating electrical bonding pads on a wafer: A method for fabricating electrical bonding pads on the electrical contact areas of a wafer includes producing first blocks made of a solder material, producing second blocks made of a solder material on these first blocks, and passing the blocks through an oven so as to shape the blocks into... Agent: Stmicroelectronics (grenoble) Sas
20110151658 - Methods of forming a semiconductor device having a contact structure: A method of forming a semiconductor device having a contact structure includes forming an insulating layer on a semiconductor substrate, and selectively implanting impurity ions into a predetermined region of the insulating layer to generate lattice defects in the predetermined region of the insulating layer. A thermal treatment, such as... Agent:
20110151659 - Multilayered through a via: A method for forming a through substrate via (TSV) comprises forming an opening within a substrate. An adhesion layer of titanium is formed within the via opening, a nucleation layer of titanium nitride is formed over the adhesion layer, and a tungsten layer is deposited over the nucleation layer, the... Agent: Freescale Semiconductor, Inc.
20110151660 - Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus: A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film... Agent: Hitachi-kokusai Electric Inc.
20110151662 - Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy and semiconductor device of this kind: (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy... Agent: Fujitsu Semiconductor Limited
20110151661 - Method of manufacturing semiconductor device: A first film containing a first metal material having a diffusion preventing function for copper, a second film containing oxygen-contained copper film, a third film containing copper and a second metal material which exhibits a diffusion preventing function for copper by bonding with oxygen, and a fourth film of copper... Agent: Fujitsu Semiconductor Limited
20110151663 - Method to form a via: A method for forming a via, comprising (a) providing a structure comprising a mask (210) disposed on a semiconductor substrate (203), wherein the structure has an opening (215) defined therein which extends through the mask and into the substrate, and wherein the mask comprises a first electrically conductive layer; (b)... Agent: Freescale Semiconductor Inc.
20110151664 - Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same: Provided are methods and apparatuses for manufacturing a multilayer metal thin film without additional heat treatment processes. The method of manufacturing a multilayer metal thin film including steps of: (a) forming a first metal layer on a substrate by flowing a first metal precursor into a first reaction container; and... Agent: Integrated Process Systems Ltd
20110151665 - Method for non-contact materials deposition: Embodiments of the invention are directed to a method of printing lines. The method may include depositing material on a substrate from a plurality of nozzles to form a multi-layered line of a desired cross section area or a desired height by dispensing the material in at least two layers... Agent:
20110151666 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes etching a substrate to form a plurality of trenches, forming first liner layers over bottom surfaces and inner sidewalls of the trenches to a first height, forming sacrificial liner layers on one of the inner sidewalls of the trenches where the first... Agent:
20110151667 - Methods of manufacturing three-dimensional semiconductor devices and related devices: A three-dimensional semiconductor device may include a substrate including wiring and contact regions and a thin film structure on the wiring and contact regions of the substrate. The thin-film structure may include a plurality of alternating wiring layers and inter-layer insulating layers defining a terraced structure in the contact region... Agent:
20110151668 - Pitch division patterning techniques: Embodiments of the invention comprise pitch division techniques to extend the capabilities of lithographic techniques beyond their minimum pitch. The pitch division techniques described herein employ additional processing to ensure pitch divided lines have the spatial isolation necessary to prevent shorting problems. The pitch division techniques described herein further employ... Agent:
20110151669 - Release accumulative charges by tuning esc voltages in via-etchers: A method of forming an integrated circuit structure on a wafer includes providing a first etcher comprising a first electrostatic chuck (ESC); placing the wafer on the first ESC; and forming a via opening in the wafer using the first etcher. After the step of forming the via opening, a... Agent:
20110151671 - method of texturing semiconductor substrates: Semiconductor substrates are cleaned and subsequently oxidized. After the semiconductor is oxidized it is textured to reduce incident light reflectance. The textured semiconductors can be used in the manufacture of photovoltaic devices.... Agent: Rohm And Haas Electronic Materials LLC
20110151670 - Method of controlling etch microloading for a tungsten-containing layer: A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is... Agent: Lam Research Corporation
20110151672 - Method of etching oxide layer and nitride layer: An exemplary method of patterning oxide layer and removing residual nitride includes steps of forming a first oxide layer, a nitride layer, a second oxide layer and a complex hard mask on a substrate in turn. The first oxide layer covers an insulating structure. The second oxide layer, the complex... Agent: United Microelectronics Corporation
20110151673 - Plasma etching method, plasma etching device, and method for producing photonic crystal: A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction... Agent: Japan Science And Technology Agency
20110151674 - Smooth siconi etch for silicon-containing films: A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface... Agent: Applied Materials, Inc.
20110151675 - Device and process for liquid treatment of a wafer shaped article: A spin chuck in an apparatus for single wafer wet processing has structures at its periphery that, in combination with a supported wafer, form a series of annular nozzles that direct flowing gas from a chuck-facing surface of the wafer, around the edge of the wafer, and exhaust the gas... Agent: Lam Research Ag
20110151676 - Methods of thin film process: A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first... Agent: Applied Materials, Inc.
20110151677 - Wet oxidation process performed on a dielectric material formed from a flowable cvd process: Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process,... Agent: Applied Materials, Inc.
20110151678 - Novel gap fill integration: Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments,... Agent:
20110151679 - Film formation method for forming silicon-containing insulating film: A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times... Agent: Tokyo Electron Limited06/16/2011 > 96 patent applications in 76 patent subcategories. invention type
20110143460 - Method of manufacturing magnetoresistance element and storage medium used in the manufacturing method: A method of manufacturing a magnetoresistance element includes a step of forming a magnetization fixed layer, a magnetization free layer, and a tunnel barrier layer provided between the magnetization fixed layer and the magnetization free layer on a substrate. In the method, the tunnel barrier layer is formed by arranging... Agent: Canon Anelva Corporation
20110143459 - Semiconductor substrate and method of fabricating semiconductor device: A semiconductor substrate includes a wafer including an element area and a non-element area delineating the element area, a first layered structure situated in the element area, a first insulating film covering the first layered structure, and exhibiting a first etching rate with respect to an etching recipe, a second... Agent: Fujitsu Semiconductor Limited
20110143461 - In vacuum optical wafer heater for cryogenic processing: A vacuum assembly used for warming processed substrates above the dew point to prevent unwanted moisture on the processed substrate surfaces as well as reducing negative impact on manufacturing throughput. The vacuum assembly includes a processing chamber, a substrate handling robot, and a heater which may be an optical heater.... Agent: Varian Semiconductor Equipment Associates, Inc.
20110143462 - Adjusting substrate temperature to improve cd uniformity: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.... Agent: Lam Research Corporation
20110143463 - Vapor deposition method and vapor deposition apparatus: According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al... Agent: Kabushiki Kaisha Toshiba
20110143464 - Methods and apparatus for control of hydrothermal nanowire synthesis: In exemplary implementations of this invention, hydrothermal synthesis of zinc oxide nanowires is morphologically controlled. Metal complex ions are used to suppress growth in a face-selective manner, by electrostatic crystal growth inhibition. This permits the aspect ratio (height/diameter) of the nanowires to be dynamically tuned over a wide range, from... Agent: Massachusetts Institute Of Technology
20110143465 - Method for forming a pixel of an electroluminescence device having storage capacitors: A method for forming a pixel of an electroluminescence device includes providing a substrate; defining at least a first area for capacitors and a second area for a transistor on the substrate; forming a first conductive layer over the first area; forming a first dielectric layer over the first conductive... Agent: Au Optronics Corporation
20110143467 - Method for fabricating ingaain light emitting device on a combined substrate: One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and... Agent: Lattice Power (jiangxi) Corporation
20110143466 - Method of forming vertical structure light emitting diode with heat exhaustion structure: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c)... Agent: Walsin Lihwa Corporation
20110143468 - Fabricating methods of reflective liquid crystal display and top-emitting oled display: Methods for forming a top-emitting organic light emitting display and a reflective type liquid crystal display are provided. The method for forming a top-emitting organic light emitting display comprises: providing a handling substrate; providing a composite layer on the handling substrate; forming an organic light emitting unit on the composite... Agent: Industrial Technology Research Institute
20110143469 - Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same: As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110143470 - Method and apparatus for manufacturing thin-film transistor array substrate: A method and apparatus of fabricating a thin film transistor array substrate is disclosed, which is capable of reducing fabrication time owing to a simplified fabrication process, wherein at least one of steps for forming a gate pattern, forming a semiconductor pattern, forming a data pattern, removing an ohmic contact... Agent:
20110143471 - Surface passivation techniques for chamber-split processing: Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III-V material layer. The passivation layer is... Agent:
20110143472 - Nitride nanowires and method of producing such: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source... Agent: Qunano Ab
20110143474 - Light-emitting element, light-emitting device, electronic appliance, and method of manufacturing the same: A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second layer contains a second organic... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110143473 - Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using thin film deposition apparatus: A thin film deposition apparatus to remove static electricity generated between a substrate and a mask, and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus.... Agent: Samsung Mobile Display Co., Ltd.
20110143476 - Electrical coupling of wafer structures: A method for electrically coupling a first wafer with a second wafer is provided. The method includes bonding the first wafer with the second wafer using a bonding material. The method further includes forming an opening in the first wafer in a scribe area of the second wafer to expose... Agent:
20110143477 - Method of manufacturing a phase change memory device using a cross patterning technique: A method of manufacturing a phase change memory device is provided. A first insulating layer having a plurality of metal word lines spaced apart at a constant distance is formed on a semiconductor substrate. A plurality of line structures having a barrier metal layer, a polysilicon layer and a hard... Agent: Hynix Semiconductor Inc.
20110143478 - Modular system and process for continuous deposition of a thin film layer on a substrate: A process and associated system for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. The substrates are pre-heated as they are conveyed through the vacuum chamber, and are then conveyed... Agent: Primestar Solar, Inc.
20110143479 - Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below... Agent: Primestar Solar, Inc.
20110143480 - Microwave anneal of a thin lamina for use in a photovoltaic cell: A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can... Agent: Twin Creeks Technologies, Inc.
20110143481 - Modular system and process for continuous deposition of a thin film layer on a substrate: A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. A conveyor system is operably disposed within the vacuum chamber and is configured for conveying the... Agent: Primestar Solar, Inc.
20110143482 - Suspended germanium photodetector for silicon waveguide: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium... Agent: International Business Machines Corporation
20110143483 - Transparent conductive layer and method of manufacturing the same: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter... Agent: Samsung Electronics Co., Ltd.
20110143484 - Method of fabricating solar cell: A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using... Agent: Industrial Technology Research Institute
20110143485 - Method of manufacturing solid-state imaging apparatus: The method of manufacturing the solid-state imaging apparatus of the present invention includes: forming elements of an imaging region and a peripheral region on a substrate; forming a plurality of wiring patterns such that the wiring patterns of the peripheral region are denser than those of the imaging region; and... Agent: Canon Kabushiki Kaisha
20110143486 - Solar cell and manufacturing method thereof: Forming an impurity diffusion layer of the second conductivity type and an antireflective film on one surface side of a semiconductor substrate of the first conductivity type; applying the first electrode material onto the antireflective film; forming a passivation film on the other surface side of the semiconductor substrate; forming... Agent: Mitsubishi Electric Corporation
20110143487 - Method and structure for thin film tandem photovoltaic cell: A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top window material underlies the top first transparent conductive oxide material. A first interface region is disposed between the top... Agent: Stion Corporation
20110143488 - Solid-state imaging device, manufacturing method for the same, and imaging apparatus: A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side... Agent: Sony Corporation
20110143493 - Method of making photovoltaic cell: Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.... Agent: General Electric Company
20110143492 - Method of p-type doping of cadmium telluride: A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial region, and (b) subjecting the CdTe to a functionalizing treatment to obtain p-type doped CdTe, said functionalizing treatment comprising a thermal treatment... Agent: General Electric Company
20110143490 - Methods of manufacturing cadmium telluride thin film photovoltaic devices: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A... Agent: Primestar Solar, Inc.
20110143489 - Process for making thin film solar cell: A process for making a component of a thin film solar cell is provided. The process includes steps of making the component in the following sequence: depositing an absorber layer on a transparent substrate, depositing a back-contact layer on the absorber layer and activating the absorber layer. The absorber layer... Agent: General Electric Company
20110143491 - Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below... Agent: Primestar Solar, Inc.
20110143494 - Schottky barrier diodes for millimeter wave sige bicmos applications: A method for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (Fc) above about 1.0 THz. In embodiments, the structure which provides a cutoff frequency (Fc) above about 1.0 THz may include an anode having an anode area which... Agent: International Business Machines Corporation
20110143495 - Methods of forming high-efficiency multi-junction solar cell structures: In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.... Agent:
20110143496 - Method of making monolithic photovoltaic module on flexible substrate: A method of making a monolithic photovoltaic module having a flexible substrate is described. The method includes the following steps. First, a flexible substrate is provided, and a first adhesive layer, a metal layer, and a second adhesive layer are formed thereon. The second adhesive layer, the metal layer and... Agent: Du Pont Apollo Limited
20110143497 - Thick film conductive composition used in conductors for photovoltaic cells: A method of forming a photovoltaic cell conductor that comprises steps of, applying on a semiconductor substrate a thick film conductive composition comprising inorganic powders comprising electrically conductive powder, first glass frit and second glass frit, and organic medium, wherein total PbO in the glass frits is 80.5 to 83.5... Agent: E. I. Du Pont De Nemours And Company
20110143498 - Semiconductor package with a support structure and fabrication method thereof: A semiconductor package with a support structure and a fabrication method thereof are provided. With a chip being electrically connected to electrical contacts formed on a carrier, a molding process is performed. A plurality of recessed portions formed on the carrier are filled with an encapsulant for encapsulating the chip... Agent: Siliconware Precision Industries Co., Ltd.
20110143499 - Vertically packaged mosfet and ic power devices as integrated module using 3d interconnected laminates: An electronic package for containing at least a top packaging module vertically stacked on a bottom packaging module. Each of the packaging modules includes a semiconductor chip packaged and connected by via connectors and connectors disposed on a laminated board fabricated with a standard printed-circuit board process wherein the top... Agent:
20110143500 - Semiconductor connection component: There is a need for providing a technology capable of decreasing on-resistance of a power transistor in a semiconductor device that integrates the power transistor and a control integrated circuit into a single semiconductor chip. There is another need for providing a technology capable of reducing a chip size of... Agent: Renesas Electronics Corporation
20110143501 - Manufacturing method for semiconductor device: Provided is a method of producing a semiconductor device having a structure wherein a semiconductor chip 3 is mounted on a wiring circuit substrate 2 and sealed with a resin. A wiring circuit substrate 2 having a connecting conductor portion that can be connected to an electrode of the chip... Agent: Nitto Denko Corporation
20110143502 - Method for low stress flip-chip assembly of fine-pitch semiconductor devices: A device including a first body (101) with terminals (102) on a surface (101a), each terminal having a metallic connector (110), which is shaped as a column substantially perpendicular to the surface. Preferably, the connectors have an aspect ratio of height to diameter of 2 to 1 or greater, and... Agent: Texas Instruments Incorporated
20110143503 - Semiconductor storage element and manufacturing method thereof: A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film serving as a tunnel insulating film; an impurity diffusion layer... Agent: Kabushiki Kaisha Toshiba
20110143504 - Thin film transistor substrate and method of manufacturing the same: A method of fabricating a liquid crystal display device includes forming a gate electrode; forming a gate insulator on the gate electrode, an active layer on the gate insulator, and an etch stopper on the active layer; depositing an ohmic contact layer, a first metal layer and a second metal... Agent:
20110143505 - Method for fabricating field effect transistor: Provided is a method for fabricating a field effect transistor. In the method, an active layer and a capping layer are formed on a substrate. A source electrode and a drain electrode is formed on the capping layer. A dielectric interlayer is formed on the substrate, and resist layers having... Agent: Electronics And Telecommunications Research Institute
20110143506 - Method for fabricating a semiconductor memory device: A method for fabricating semiconductor memory device includes providing a first semiconductor substrate, and forming a first storage device on the first semiconductor substrate. The method includes forming a switching device on the first storage device, and forming a second storage devices on the switching device. Logic devices are formed... Agent:
20110143507 - Transistor of semiconductor device and method of fabricating the same: Provided are a transistor of a semiconductor device and a method of fabricating the same. The transistor of a semiconductor device includes an epitaxial substrate having a buffer layer, a first silicon (Si) planar doped layer, a first conductive layer, a second Si planar doped layer having a different dopant... Agent:
20110143508 - Method of fabricating vertical channel transistor: o
20110143509 - Method of forming a semiconductor device: A method of forming a semiconductor device includes the following processes. A groove is formed in a semiconductor substrate. A gate insulating film is formed on an inside wall of the groove. A buried gate electrode is formed on the gate insulating film and on a bottom portion of the... Agent: Elpida Memory, Inc.
20110143510 - Method of controlling gate thickness in forming finfet devices: A method of forming a FinFET device is provided. In one embodiment, a fin is formed on a substrate. A gate structure is formed over the fin, the gate structure having a dielectric layer and a conformal first polysilicon layer formed above the dielectric layer. An etch stop layer is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110143511 - Method of fabricating n-channel metal-oxide semiconductor transistor: A method of fabricating an NMOS transistor, in which, an epitaxial silicon layer is formed before a salicide process is performed, then a nickel layer needed for the salicide process is formed, and, thereafter, a rapid thermal process is performed to allow the nickel layer to react with the epitaxial... Agent:
20110143512 - Method for dual energy implantation for ultra-shallow junction formation of mos devices: A method for forming a lightly doped drain (LDD) region in a semiconductor substrate. The method includes generating an ion beam of a selected species, and accelerating the ion beam, wherein the accelerated ion beam includes a first accelerated portion and a second accelerated portion. The method further includes deflecting... Agent: Semiconductor Manufacturing International (shanghai) Corporation
20110143513 - Methods of forming a shallow base region of a bipolar transistor: The disclosed subject matter provides a method of forming a bipolar transistor. The method includes depositing a first insulating layer over a first layer of material that is doped with a dopant of a first type. The first layer is formed over a substrate. The method also includes modifying a... Agent: Zarlink Semiconductor (us), Inc.
20110143514 - Mram cell structure: Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110143516 - Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same: Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width... Agent:
20110143515 - Semiconductor device and method of manufacturing the same: A semiconductor device with first and second groups of transistors, the second group transistors each having a lower operating voltage than that of each of said transistors in said first group, the first group transistors have first gate electrodes formed from a silicon based material layer on a semiconductor substrate... Agent: Sony Corporation
20110143517 - Iii-nitride monolithic ic: III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure... Agent: International Rectifier Corporation
20110143518 - Heterogeneous integration of low noise amplifiers with power amplifiers or switches: A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate having a first end and a second end, a conducting layer above the first end... Agent:
20110143519 - Production of isolation trenches with different sidewall dopings: A description is given of a method for producing isolation trenches (32, 34) with different sidewall dopings on a silicon-based substrate wafer for use in the trench-isolated smart power technology. In this case, a first trench (32) having a first width and a second trench (34) having a second width... Agent:
20110143520 - Two-chamber system and method for serial bonding and exfoliation of multiple workpieces: A system for treating distinct batches of workpieces to serial procedures comprises first and second multi-site structures. In each multi-site structure the sites are rotatable for alignment in turn with loading and unloading stations together constituting treatment or process stations. Workpieces of a batch are loaded onto all of the... Agent: Twin Creeks Technologies, Inc.
20110143521 - Apparatus and method for simultaneous treatment of multiple workpieces: A system for simultaneously treating multiple workpieces is configured with treatment sites, configured to hold respective workpieces, fixed on a rotatable base. Treatment stations are equipped with respective active components operable simultaneously to treat respective workpieces identically on respective aligned treatment sites. For loading and unloading the treatment sites are... Agent: Twin Creeks Technologies, Inc.
20110143522 - Relaxation of strained layers: The present invention relates to a method for relaxing a strained material layer by depositing a first low-viscosity layer on a first face of a strained-material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient... Agent:
20110143523 - Semiconductor integrated device and manufacturing method for the same: A manufacturing method for a semiconductor integrated device including forming a second impurity layer of a second conductivity type that is higher in impurity concentration than a second well of the second conductivity type on a first impurity layer of a first conductivity type that is higher in impurity concentration... Agent: Renesas Electronics Corporation
20110143524 - Methods of manufacturing rewriteable three-dimensional semiconductor memory devices: Methods of forming nonvolatile memory devices include forming a vertical stack of nonvolatile memory cells on a substrate. This is done by forming a vertical stack of spaced-apart gate electrodes on a first sidewall of a vertical silicon active layer and treating a second sidewall of the vertical silicon active... Agent:
20110143525 - Nitride semiconductor substrate and manufacturing method thereof: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a... Agent: Siltron Inc.
20110143526 - Method for manufacturing semiconductor wafer: A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured.... Agent: Sumco Techxiv Corporation
20110143527 - Techniques for generating uniform ion beam: Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion... Agent: Varian Semiconductor Equipment Associates, Inc.
20110143528 - Devices with cavity-defined gates and methods of making the same: Disclosed are methods, systems and devices, including a method that includes the acts of forming a semiconductor fin, forming a sacrificial material adjacent the semiconductor fin, covering the sacrificial material with a dielectric material, forming a cavity by removing the sacrificial material from under the dielectric material, and forming a... Agent: Micron Technology, Inc.
20110143529 - Method of fabricating high-k/metal gate device: The present disclosure provides a method that includes providing a semiconductor substrate; forming a gate structure over the semiconductor substrate, first gate structure including a dummy dielectric and a dummy gate disposed over the dummy dielectric; removing the dummy gate and the dummy dielectric from the gate structure thereby forming... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20110143530 - Semiconductor memory device and method of manufacturing the same: A semiconductor memory device according to the present invention includes: a first transistor formed on a semiconductor substrate 11, the first transistor including a first gate-insulating film 14a that is oxynitrided; and a second transistor including a second gate-insulating film 14b formed on the semiconductor substrate 11 and a barrier... Agent: Kabushiki Kaisha Toshiba
20110143531 - Packaging conductive structure and method for manufacturing the same: A packaging conductive structure for a semiconductor substrate and a method for manufacturing the structure are provided. The structure comprises an under bump metal (UBM) that overlays a pad of the semiconductor substrate. At least one auxiliary component is disposed on the UBM. Then, a bump conductive layer is disposed... Agent:
20110143532 - Method of forming semiconductor cell structure, method of forming semiconductor device including the semiconductor cell structure, and method of forming semiconductor module including the semiconductor device: In a method of forming a semiconductor cell structure, a first insulating layer may be formed on a semiconductor substrate. A connection pattern may be formed in the first insulating layer. Second and third insulating layers may be sequentially formed on the connection pattern. The third insulating layer may be... Agent: Samsung Electronics Co., Ltd
20110143533 - Poison-free and low ulk damage integration scheme for damascene interconnects: A method of forming a dual damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using a tri-layer resist scheme. Finally,... Agent: Texas Instruments Incorporated
20110143534 - Method for forming metallic materials comprising semi-conductors: The method for forming first and second metal-based materials comprises providing a substrate comprising an area made from a first semi-conductor material and an area made from a second semi-conductor material comprising germanium separated by a pattern made from dielectric material, depositing a metal layer and performing a first heat... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20110143535 - Production of tsv interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour: A method for producing an interconnection structure is disclosed. In one aspect, there is formation in a substrate of at least one trench forming a closed contour and at least one hole situated inside the closed contour, the trench and the hole being separated by a zone of the substrate.... Agent: Commissariat A Lenergie Atomique Et Aux Energies Alternatives
20110143536 - Method for making an aperture in a carrier and electrically connecting two opposite faces of the carrier: Disclosed is a method for making an aperture in a carrier and electrically connecting two opposite faces of the carrier. At first, a carrier is provided. Secondly, a heater is provided for heating a portion of the carrier in an environment rich in oxygen, thus making an aperture in the... Agent: Mao Bang Electronic Co., Ltd.
20110143537 - Method of fabricating semiconductor device and synchronous pulse plasma etching equipment for the same: Provided are a method of fabricating a semiconductor device and synchronous pulse plasma etching equipment for the same. The method includes outputting a first radio frequency (RF) power and a control signal and outputting a second RF power. The first RF power is pulse-width modulated to have a first frequency... Agent: Samsung Electronics Co., Ltd.
20110143538 - Semiconductor processing methods: Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a... Agent: Micron Technology, Inc.
20110143539 - Polishing pad with endpoint window and systems and methods using the same: A polishing pad including a path therethrough to transmit a signal for in situ monitoring of an endpoint in a polishing operation. In one embodiment, the polishing pad includes a polishing composition distribution layer on a first side of a guide plate and a support layer on an opposed second... Agent:
20110143540 - Semiconductor wafer handler: A semiconductor wafer handler comprises a ring (70) attached to a hub (80) by a plurality of spokes (90). Vacuum is applied to the surface of the semiconductor wafer through orifices (100) containing in the ring (70). Water and/or nitrogen can be applied to the surface of the semiconductor wafer... Agent: Texas Instruments Incorporated
20110143541 - Apparatus and method of treating surface of semiconductor substrate: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the... Agent:
20110143543 - Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures: Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water.... Agent: Micro Technology Inc.
20110143542 - Method to remove capping layer of insulation dielectric in interconnect structures: A method for patterning an insulation layer and selectively removing a capping layer overlying the insulation layer is described. The method utilizes a dry non-plasma removal process. The dry non-plasma removal process may include a self-limiting process.... Agent: Tokyo Electron Limited
20110143544 - Method of forming micropattern, die formed by this method of forming micropattern, transfer method and micropattern forming method using this die: A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.... Agent:
20110143545 - Apparatus and method of treating surface of semiconductor substrate: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water... Agent:
20110143546 - Ashing method and ashing device: An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber 14, excites said gas... Agent:
20110143547 - Solution for removal of residue after semiconductor dry process and residue removal method using same: (B) an aqueous solution comprising (5) an amine salt of a monocarboxylic acid, and/or (6) an amine salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and (7) water, wherein the pH of the aqueous solution is equal to or greater than the pKa... Agent: Daikin Industries, Ltd.
20110143548 - Ultra low silicon loss high dose implant strip: Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental hydrogen, a fluorine-containing gas and a protectant gas. The plasma-activated gases reacts with the high-dose implant resist, removing both the crust and bulk... Agent:
20110143549 - Etching method, method for manufacturing microstructure, and etching apparatus: In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced... Agent: Chlorine Engineers Corp. Ltd.
20110143550 - Method for manufacturing semiconductor device, apparatus for processing substrate, and computer readable medium: A method for manufacturing a semiconductor device, including: partially removing a first layer formed on a wafer supported by a support member by supplying a first liquid at a temperature of 60 degrees C. or higher over the wafer (step S1); cooling the wafer after the partially removing the first... Agent: Renesas Electronics Corporation
20110143551 - Device and process for chemical vapor phase treatment: Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to... Agent:
20110143552 - Heat-resistant adhesive sheet for semiconductor device fabrication, adhesive used for the sheet, and method for fabricating semiconductor device using the sheet: The present invention provides a heat-resistant adhesive sheet for semiconductor device fabrication that is attached to a substrateless semiconductor chip when the chip is encapsulated with resin. The adhesive sheet includes a base material layer and an adhesive layer. The adhesive layer contains a rubber component and an epoxy resin... Agent: Nitto Denko Corporation
20110143553 - Integrated tool sets and process to keep substrate surface wet during plating and clean in fabrication of advanced nano-electronic devices: Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in... Agent: Lam Research Corporation
20110143554 - Reduction of defects formed on the surface of a silicon oxynitride film: Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating... Agent:06/09/2011 > 84 patent applications in 66 patent subcategories. invention type
20110136266 - Method of manufacturing a light emitting device and thin film forming apparatus: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110136265 - Method of manufacturing thin-film solar panel and laser scribing apparatus: The present invention provides a method of manufacturing a thin-film solar panel with a laser scribing process to perform linear groove processing by irradiating a thin-film layer formed on a substrate with laser light to be separated from adjacent structure, including steps of: specifying an accurate position, size, shape of... Agent: Hitachi Via Mechanics, Ltd.
20110136267 - Method of controlling film thinning of semiconductor wafer for solid-state image sensing device: The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this,... Agent: Sumco Corporation
20110136268 - Processes for forming electronic devices including polishing metal-containing layers: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other... Agent: Spansion LLC
20110136269 - Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a... Agent: Industrial Technology Research Institute
20110136270 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device, the semiconductor device including an integrated circuit having plural connection terminals arranged on a predetermined local region of the integrated circuit, plural metal bumps, and a wiring layer connected to at least a portion of the connection terminals via the plural metal bumps,... Agent: Shinko Electric Industries Co., Ltd.
20110136271 - Method of producing semiconductor components: A method is provided for producing a semiconductor component (1) comprising at least one semiconductor body (2) and one connection carrier region (5). A semiconductor layer sequence (20) with an active region (23) intended for generating radiation is deposited on a substrate (25). The semiconductor layer sequence is arranged on... Agent: Osram Opto Semiconductors Gmbh
20110136272 - Fabrication method of semiconductor integrated circuit device: To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between... Agent:
20110136273 - Reflective contact for a semiconductor light emitting device: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed... Agent: Philips Lumileds Lighting Company, LLC
20110136274 - Liquid crystal display device and method for fabricating the same: A liquid crystal display device includes an array substrate including: gate and data lines crossing each other to define a pixel region on a first substrate; a thin film transistor connected to the gate and data lines; and first and second height adjusters; an opposing substrate facing the array substrate;... Agent:
20110136275 - Polymer dispersed liquid crystal display and method of fabricating the same: There are provided a polymer dispersed liquid crystal (PDLC) display not using a backlight unit and a method of fabricating the same. The PDLC display comprises a rear substrate over which a thin film transistor (TFT), a first electrode, and a second electrode are formed, a front substrate apart from... Agent:
20110136276 - Nitride semiconductor light-emitting device and method for fabrication thereof: A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate (10) with a defect density as low as 106 cm−2 or less, a stripe-shaped depressed portion (16) is... Agent: Sharp Kabushiki Kaisha
20110136277 - Method of fabricating liquid crystal display device: Disclosed is a method of fabricating a LCD device that includes forming sacrifice layer patterns in a pixel region while forming a gate line, a first storage electrode, and a gate pad on a substrate; sequentially forming a gate insulation film, an amorphous silicon film, an impurity-doped amorphous silicon film,... Agent:
20110136278 - Method of fabricating organic light emitting diode display device: An organic layer of an organic light emitting diode (OLED) display device is formed by transferring a transfer layer of a donor film to aligned pixel openings in a pixel defining region of the OLED display device such that the organic layer is formed in the pixel openings. Each aligned... Agent: Samsung Mobile Display Co., Ltd.
20110136279 - Thin film transistor, thin film transistor display panel, and manufacturing method thereof: A thin film transistor is provided. The thin film transistor includes a frame formed on a substrate and having a plurality of grooves, line-shaped semiconductors disposed in at least one of the grooves, a first electrode overlapping with the line-shaped semiconductors, and second and third electrodes connected to ends of... Agent: Samsung Electronics Co., Ltd.
20110136281 - Epitaxial formation support structures and associated methods: Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the... Agent: Micron Technology, Inc.
20110136280 - Growth methodology for light emitting semiconductor devices: A method of manufacturing an optoelectronic light emitting semiconductor device is provided where a Multi-quantum Well (MQW) subassembly is subjected to reduced temperature vapor deposition processing to form one or more of n-type or p-type layers over the MQW subassembly utilizing a plurality of precursors and an indium surfactant. The... Agent:
20110136282 - Method for producing device: The present invention is directed to a method for producing a device, comprising the steps of: applying, on a donor substrate, a precursor material which is solvent-soluble during application and is capable of being converted to a device-constituting material after the application; converting the precursor material to a device-constituting material;... Agent: Toray Industries, Inc.
20110136283 - Process for fabricating mems devices: A process for fabricating a MEMS device with movable comb teeth and stationary comb teeth. A single mask is used to define, during a series of processing steps, the location and width of both movable comb teeth and stationary comb teeth so as to assure self alignment of the comb... Agent:
20110136284 - Micro-electro-mechanical transducer having a surface plate: A micro-electro-mechanical transducer (such as a cMUT) is disclosed. The transducer has a base, a spring layer placed over the base, and a mass layer connected to the spring layer through a spring-mass connector. The base includes a first electrode. The spring layer or the mass layer includes a second... Agent: Kolo Technologies, Inc.
20110136285 - Method for manufacturing stacked film and solar cell: A method of manufacturing a stacked film includes; subjecting a semiconductor substrate to a radical oxidation reaction to form a radical oxide layer on a surface of the semiconductor substrate, annealing the radical oxide layer in a hydrogen atmosphere to convert the radical oxide layer to a first passivation layer,... Agent: Samsung Electronics Co., Ltd.
20110136286 - Method of cleaning and forming a negatively charged passivation layer over a doped region: The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of... Agent: Applied Materials, Inc.
20110136287 - Annealing of semi-insulating cdznte crystals: In a method of annealing a Cd1−xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the... Agent: Ii-vi Incorporated
20110136288 - Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up... Agent: Zena Technologies, Inc.
20110136289 - Photodetector using nanoparticles: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of... Agent: Samsung Electronics Co., Ltd
20110136290 - Etching methods and methods of manufacturing a cmos image sensor using the same: In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed... Agent:
20110136291 - Manufacturing method of a solid-state image pickup apparatus: Provided is a manufacturing method of a solid-state image pickup apparatus including: a step of forming a first semiconductor region of a first conductivity type in a semiconductor substrate, according to an ion implantation method from a first surface of the semiconductor substrate; a step of forming a plurality of... Agent: Canon Kabushiki Kaisha
20110136292 - Fabricating method of complementary metal-oxide-semiconductor (cmos) image sensor: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a transistor device region in the substrate. The transistor device region includes at least a region for forming a transfer transistor. A dielectric layer... Agent:
20110136293 - Reaction methods to form group ibiiiavia thin film solar cell absorbers: The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including... Agent: Solopower, Inc.
20110136294 - Plasma-treated photovoltaic devices: A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer.... Agent: First Solar, Inc.
20110136295 - Method for manufacturing solid-state image pickup-device: A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the... Agent: Sony Corporation
20110136296 - Method for manufacturing semiconductor device: Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on... Agent: Electronics And Telecommunications Research Institute
20110136297 - Integrated circuit chip that supports through-chip electromagnetic communication: One embodiment of the present invention provides an integrated circuit chip, including an active face upon which active circuitry and signal pads reside, and a back face opposite the active face. The integrated circuit chip additionally comprises an electromagnetic via that facilitates communication between signal pads on the integrated circuit... Agent: Oracle International Corporation
20110136298 - Method of manufacturing a wiring board: A wiring board has an insulating layer, a plurality of wiring layers formed in such a way as to be insulated from each other by the insulating layer, and a plurality of vias formed in the insulating layer to connect the wiring layers. Of the wiring layers, a surface wiring... Agent: Renesas Electronics Corporation
20110136299 - Leadframe for leadless package, structure and manufacturing method using the same: A leadframe employed by a leadless package comprises a plurality of package units and an adhesive tape. Each of the package units has a die pad with a plurality of openings and a plurality of pins disposed in the plurality of openings. The adhesive tape is adhered to the surfaces... Agent: Chipmos Technologies Inc.
20110136300 - Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants: A method for producing a semiconductor device such as a RC-IGBT or a BIGT having a patterned surface wherein partial regions doped with dopants of a first conductivity type and regions doped with dopants of a second conductivity type are on a same side of a semiconductor substrate is proposed.... Agent: Abb Technology Ag
20110136301 - Semiconductor device and manufacturing method thereof: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110136302 - Semiconductor device and manufacturing method thereof: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110136303 - Method and apparatus for manufacturing thin-film transistor: A method and apparatus of fabricating a thin film transistor is disclosed, which patterns an ohmic contact layer by a laser patterning process so that it is capable of preventing a semiconductor layer from being damaged, and reducing fabrication time, wherein the method comprises forming a gate electrode pattern on... Agent:
20110136304 - Techniques to enhance selectivity of electrical breakdown of carbon nanotubes: Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than... Agent: Etamota Corporation
20110136305 - Group iii nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices: Methods of fabricating transistor in which a first Group III nitride layer is formed on a substrate in a reactor, and a second Group III nitride layer is formed on the first Group III nitride layer. An insulating layer such as, for example, a silicon nitride layer is formed on... Agent:
20110136306 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device includes oxidizing a surface of a semiconductor substrate to form a first insulating film covering a first area, a second area, and a third area of the semiconductor substrate; removing the portions of the first insulating film lying on the first area and... Agent: Fujitsu Semiconductor Limited
20110136307 - Semiconductor device having buffer layer between sidewall insulating film and semiconductor substrate: A semiconductor device includes an NMOS transistor and a PMOS transistor. The NMOS transistor includes a channel area formed in a silicon substrate, a gate electrode formed on a gate insulating film in correspondence with the channel area, and a source area and a drain area formed in the silicon... Agent: Fujitsu Semiconductor Limited
20110136308 - Semiconductor device having super junction and method of manufacturing the same: A semiconductor device includes a silicon substrate having a (110)-oriented surface, a PN column layer disposed on the (110)-oriented surface, a channel-forming layer disposed on the PN column layer, a plurality of source regions disposed at a surface portion of the channel-forming layer, and gate electrodes penetrate through the channel-forming... Agent: Denso Corporation
20110136309 - Method of forming an insulated gate field effect transistor device having a shield electrode structure: In one embodiment, a method for forming a transistor having insulated gate electrodes and insulated shield electrodes within trench regions includes forming disposable dielectric stack overlying a substrate. The method also includes forming the trench regions adjacent to the disposable dielectric stack. After the insulated gate electrodes are formed, the... Agent:
20110136310 - Method of forming an insulated gate field effect transistor device having a shield electrode structure: A method for forming a transistor having insulated gate electrodes and insulated shield electrodes within trench regions includes forming dielectric stack overlying a substrate. The dielectric stack includes a first layer of one material overlying the substrate and a second layer of a different material overlying the first layer. Trench... Agent:
20110136311 - Semiconductor device having a locally buried insulation layer and method of manufacturing the semiconductor device: A semiconductor device having a locally buried insulation layer and a method of manufacturing a semiconductor device having the same are provided, in which a gate electrode is formed on a substrate, and oxygen ions are implanted into an active region to form a locally buried insulation layer. An impurity... Agent:
20110136312 - Semiconductor device and its manufacture method: The disclosure pertains to a semiconductor device and its manufacture method, the semiconductor device including non-volatile memory cells and a peripheral circuit including field effect transistors having an insulated gate. A semiconductor device and its manufacture method are to be provided, the semiconductor device having memory cells with a high... Agent: Fujitsu Semiconductor Limited
20110136313 - Methods of forming cmos transistors with high conductivity gate electrodes: Provided is a method for manufacturing a MOS transistor. The method comprises providing a substrate having a first active region and a second active region; forming a dummy gate stack on the first active region and the second active region, the dummy gate stack comprising a gate dielectric layer and... Agent:
20110136314 - Systems and methods for reducing contact to gate shorts: A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed on a substrate, a contact is formed on the gate and the substrate, and an insulator is formed between the gate and the contact.... Agent:
20110136315 - Multi-level phase change memory: A phase change memory may be formed which is amenable to multilevel programming. The phase change material may be formed with a lateral extent which does not exceed the lateral extent of an underlying heater. As a result, the possibility of current bypassing the amorphous phase change material in the... Agent:
20110136316 - Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same: A phase change memory device includes a semiconductor substrate having a plurality of phase change cell regions; a lower electrode formed in each of the phase change cell regions on the semiconductor substrate; an insulation layer formed on the semiconductor substrate to cover the lower electrode and defined with a... Agent: Hynix Semiconductor Inc.
20110136317 - Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the device: Example embodiments relate to a semiconductor device including an oxide dielectric layer and a non-oxide dielectric layer, a method of fabricating the device, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device may include a lower electrode, an oxide dielectric layer... Agent: Samsung Electronics Co., Ltd.
20110136318 - Method of manufacturing semiconductor device having optical devices: Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a... Agent: Electronics And Telecommunications Research Institute
20110136319 - Methods of forming isolation structures, and methods of forming nonvolatile memory: Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed within the trench, and then exposed to steam. A maximum temperature of the polysilazane during the steam exposure may be less than or equal to about 500°... Agent:
20110136320 - Method of manufacturing soi substrate: To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110136321 - Method for manufacturing lamination type semiconductor integrated device: Provided is a method for manufacturing a lamination type semiconductor integrated device that can simultaneously attain grinding force resistance during back side grinding of a semiconductor wafer, heat resistance during anisotropic dry etching and the like, chemical resistance during plating and etching, smooth debonding of a support substrate for processing... Agent: Shin-etsu Chemical Co., Ltd.
20110136322 - Adhesive sheet for a stealth dicing and a production method of a semiconductor wafer device: An adhesive sheet is provided enabling to efficiently produce the very small size semiconductor chip by a stealth dicing method. An adhesive sheet for a stealth dicing includes a substrate and an adhesive layer formed on one side of the substrate, wherein a Young's modulus of the adhesive sheet at... Agent: Lintec Corporation
20110136323 - Semiconductor device manufacturing equipment and semiconductor device manufacturing method: Semiconductor device manufacturing equipment in which in the process of dividing a substrate into individual semiconductor devices using a dicing blade, the possibility of an odd piece flying off a supporting member is prevented. A supporting member supports a substrate for semiconductor devices on one surface thereof. A dicing blade... Agent: Renesas Electronics Corporation
20110136324 - Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus: A transfer-enabling apparatus, produced by a method of manufacturing, includes a substrate patterned with islands separated by trenches and an epitaxial layer, grown at least on the islands, providing semiconductor dice in such a configuration partially released from said substrate and suspended over the substrate, and interconnected, by anchors of... Agent: Cooledge Lighting, Inc.
20110136325 - Method for fabricating a monolithic integrated composite group iii-v and group iv semiconductor device: According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor layer formed over the first side and comprising at least one group IV semiconductor device, and a group III-V semiconductor body formed over the... Agent: International Rectifier Corporation
20110136326 - Pillar devices and methods of making thereof: A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity... Agent: Sandisk 3d LLC
20110136327 - High mobility monolithic p-i-n diodes: Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and... Agent: Applied Materials, Inc.
20110136328 - Method for depositing ultra fine grain polysilicon thin film: According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with a substrate to deposit a polysilicon thin film on the substrate, wherein the source gas contains a silicon-based gas, an oxygen-based gas and a phosphorous-based... Agent:
20110136329 - Manufacturing method of semiconductor device: A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate... Agent: Sen Corporation
20110136330 - Nonvolatile semiconductor memory device and manufacturing method thereof: A memory device includes a semiconductor substrate, memory elements formed above the substrate in rows and columns, bit lines and word lines selectively connected with the memory elements in the respective columns and rows, each memory element including, a first gate insulator formed above the substrate, a charge accumulation layer... Agent: Kabushiki Kaisha Toshiba
20110136331 - Semiconductor device and method for fabricating the same: A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate insulating film; a second gate insulating film on a second region of the semiconductor substrate; and a second gate electrode on the second gate insulating... Agent: Panasonic Corporation
20110136332 - Methods of forming integrated circuit devices with crack-resistant fuse structures: A fuse base insulating region, for example, an insulating interlayer or a compensation region disposed in an insulating interlayer, is formed on a substrate. An etch stop layer is formed on the fuse base insulating region and forming an insulating interlayer having a lower dielectric constant than the first fuse... Agent: Samsung Electronics Co., Ltd.
20110136333 - Semiconductor materials and methods of preparation and use thereof: Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.... Agent: Polyera Corporation
20110136334 - Method of forming at least one bonding structure: A method of forming at least one bonding structure may be provided. A ball may be formed on the front end of a wire outside a capillary. The capillary may be moved downwardly to form a preliminary compressed ball on a first pad using the ball. The capillary may be... Agent: Samsung Electronics Co., Ltd.
20110136335 - Semiconductor device with improved contacts: A device with a solder joint made of a copper contact pad (210) of certain area (202) and an alloy layer (301) metallurgically attached to the copper pad across the pad area. The alloy layer contains copper/tin alloys, which include Cu6Sn5 intermetallic compound, and nickel/copper/tin alloys, which include (Ni,Cu)6Sn5 intermetallic... Agent: Texas Instruments Incorporated
20110136336 - Methods of forming conductive vias: Methods of forming a conductive via may include forming a blind via hole partially through a substrate, forming an aluminum film on surfaces of the substrate, removing a first portion of the aluminum film from some surfaces, selectively depositing conductive material onto a second portion of the aluminum film, and... Agent: Micron Technology, Inc.
20110136337 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device. The method includes forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film; fusing the resin layer so that fusion of a surface section is progressed more than of a central section by a first... Agent: Seiko Epson Corporation
20110136339 - Conductor structure including manganese oxide capping layer: A microelectronic structure includes a dielectric layer located over a substrate. The dielectric layer is separated from a copper containing conductor layer by an oxidation barrier layer. The microelectronic structure also includes a manganese oxide layer located aligned upon a portion of the copper containing conductor layer not adjoining the... Agent: International Business Machines Corporation
20110136338 - Method for fabricating semiconductor device: A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where... Agent: Electronics And Telecommunications Research Institute
20110136340 - Method of fabricating semiconductor device: A method of fabricating a semiconductor device facilitates the forming of a conductive pattern of features having different widths. A conductive layer is formed on a substrate, and a mask layer is formed on the conductive layer. First spaced apart patterns are formed on the mask layer and a second... Agent: Samsung Electronics Co., Ltd.
20110136341 - Field effect transistor having multiple pinch off voltages: A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An ohmic contact layer on the semiconductor layer, a source and a drain on the ohmic contact... Agent: Rfmd (uk) Limited
20110136342 - Semiconductor apparatus and method for manufacturing the same: A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on... Agent: Fujikura Ltd
20110136343 - Composition and method for low temperature deposition of silicon-containing films: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.... Agent: Advanced Technology Materials, Inc.
20110136344 - Composition and method for polishing polysilicon: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing... Agent: Cabot Microelectronics Corporation
20110136345 - Process for the manufacture of etched items: C4 compounds selected from the group of trifluorobutadienes and tetrafluorobutenes can be used as etching gases, especially for anisotropic etching in the production of etched items, for example, of semiconductors, e.g. semiconductor memories or semiconductor logic circuits, flat panels, or solar cells. Preferred compounds are 1,1,3-trifluoro-1,3-butadiene, (E)-1,1,1,3-tetrafluoro-2-butene, 2,4,4,4-tetrafluoro-1-butene and (Z)-1,1,1,3-tetrafluoro-2-butene... Agent: Solvay Fluor Gmbh
20110136346 - Substantially non-oxidizing plasma treatment devices and processes: Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of... Agent: Axcelis Technologies, Inc.
20110136347 - Point-of-use silylamine generation: The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and monosilylamine (MSA). Mixtures involving two or more silylamines can change composition (e.g. proportion of DSA to TSA) over time. Producing... Agent: Applied Materials, Inc.
20110136348 - Phonon-enhanced crystal growth and lattice healing: A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.... Agent: Massachusetts Institute Of Technology06/02/2011 > 69 patent applications in 57 patent subcategories. invention type
20110129945 - Superconductivity based on bose-einstein condensation of electron or electron-hole pairs in semiconductors: The invention describes a method of achieving superconductivity in Group IV semiconductors via the addition of doubly charged impurity atoms to the crystal lattice. The doubly charged impurities function as composite bosons in the semiconductor. Increasing the density of the composite bosons to a level where their wavefunctions overlap, results... Agent:
20110129946 - High density spin-transfer torque mram process: A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is... Agent: Magic Technologies, Inc.
20110129947 - Method for improving performance of a substrate carrier: A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter... Agent: Veeco Instruments, Inc.
20110129949 - Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate,... Agent: The United State Of America As Represented By The Secretary Of The Army
20110129948 - Optical alignment methods for forming leds having a rough surface: A method of aligning a wafer when lithographically fabricating a light-emitting diode (LED). The method includes forming on the wafer at least one roughened alignment mark having a root-mean-square (RMS) surface roughness σS. The roughened alignment mark is formed as a consequence of forming a plasma etch to roughen a... Agent: Ultratech, Inc.
20110129950 - Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device: A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer... Agent: Sony Corporation
20110129951 - Process for manufacturing sealed organic electroluminescence devices: A process for manufacturing sealed organic EL devices includes a step of forming an organic EL layer on a region of an anode-mounted substrate having a substrate and an anode, the region including at least a bonding region in which a sealing member will be bonded and a region which... Agent: Showa Denko K.k.
20110129952 - Thin film transistor substrates and method of manufacturing the same: A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can... Agent:
20110129953 - Method of manufacturing nitride semiconductor device: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first... Agent:
20110129954 - Method for manufacturing a photovoltaic cell structure: In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the... Agent: Oerlikon Solar Ag, Truebbach
20110129955 - Delamination and crack resistant image sensor structures and methods: A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods... Agent: International Business Machines Corporation
20110129956 - Wedge imprint patterning of irregular surface: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some... Agent: 1366 Technologies Inc.
20110129957 - Method of manufacturing solar cell: A solar cell manufacturing method is provided. A solar cell manufacturing method according to an exemplary embodiment of the present invention includes: forming a first electrode on a substrate, forming a precursor including copper (Cu), gallium (Ga), and indium (In) on the first electrode, supplying selenium (Se) to the precursor... Agent:
20110129958 - Method and apparatus for scribing a line in a thin film using a series of laser pulses: A series of laser pulses in a pulse train, each pulse with a predetermined temporal power shape, scribes a line in a thin film of material on a substrate. The predetermined temporal pulse shape has a fast risetime and fast falltime and a pulse length between 10% power points of... Agent: Esi-pyrophotonics Lasers, Inc.
20110129959 - Crystallization processing for semiconductor applications: A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse... Agent: Applied Materials, Inc.
20110129960 - Method of manufacturing stacked wafer level package: A method of manufacturing a stacked wafer level package includes: preparing a substrate; forming a conductive layer on the substrate; forming chip connection pads and internal connection pads on the conductive layer; forming solder balls connected to the internal connection pads; mounting a semiconductor chip on the conductive layer to... Agent: Samsung Electro-mechanics Co., Ltd.
20110129962 - Encapsulation method for packaging semiconductor components with external leads: This invention discloses a method for packaging a semiconductor device with leads extending outside its encapsulation. The method comprises the following steps: Step 1, providing a lead frame comprising a plurality of lead frame units arranged in two dimensional array, each lead frame unit comprising a die pad and a... Agent: Alpha And Omega Semiconductor Incorporated
20110129961 - Process to form semiconductor packages with external leads: This invention discloses a process for packaging semiconductor device with external leads. The process includes comprises Step 1: providing a lead frame comprising a plurality of lead frame units connected by a plurality of metal beams, each lead frame unit comprising a die pad and a plurality of leads located... Agent: Alpha And Omega Semiconductor Incorporated
20110129963 - Clipless integrated heat spreader process and materials: In one or more embodiments, a method comprising applying thermo compression to a package assembly including a lid, a die, and a package substrate to assemble the package assembly is disclosed. The method may include assembling the package assembly without coupling a biasing mechanism to the lid. Heat may be... Agent:
20110129965 - Method for manufacturing semiconductor package system with die support pad: A method for manufacturing a semiconductor package system includes: providing a leadframe, having an open center, with leads adjacent to a peripheral edge of the leadframe; making a die support pad, formed without tie bars, separately from the leadframe; providing a coverlay tape for positioning the support pad centered within... Agent:
20110129964 - Structure combining an ic integrated substrate and a carrier, and method of manufacturing such structure: The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The materials of the carrier and the first dielectric layer... Agent: Princo Corp.
20110129966 - Semiconductor device has encapsulant with chamfer such that portion of substrate and chamfer are exposed from encapsulant and remaining portion of surface of substrate is covered by encapsulant: A semiconductor device and a fabrication method thereof are provided. An opening having at least one slanted side is formed on a substrate. At least one chip and at least one passive component are mounted on the substrate. An encapsulant having a cutaway corner is formed on the substrate to... Agent: Siliconware Precision Industries Co., Ltd.
20110129967 - Three-terminal power device with high switching speed and manufacturing process: An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device connected in series between the first and the second conduction terminals; the... Agent: Stmicroelectronics S.r.i.
20110129969 - Method for manufacturing semiconductor device: A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110129968 - Thin film transistor and method of manufacturing the same: A thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; a... Agent:
20110129970 - Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process: In sophisticated transistor elements, long-term threshold voltage shifts in transistors comprising a threshold adjusting semiconductor alloy may be reduced by reducing the roughness of an interface formed between the threshold adjusting semiconductor material and the gate dielectric material. To this end, a portion of the threshold adjusting semiconductor material may... Agent:
20110129971 - Performance enhancement in transistors comprising high-k metal gate stack by reducing a width of offset spacers: In sophisticated semiconductor devices including transistors having a high-k metal gate electrode structure, disposable spacers may be provided on the encapsulating spacer element with a reduced width so as to not unduly increase a lateral offset of a strain-inducing material to be incorporated into the active region. For this purpose,... Agent:
20110129972 - Transistor including a high-k metal gate electrode structure formed on the basis of a simplified spacer regime: In sophisticated semiconductor devices, the threshold voltage adjustment of high-k metal gate electrode structures may be accomplished by a work function metal species provided in an early manufacturing stage. For this purpose, a protective sidewall spacer structure is provided, which is, in combination with a dielectric cap material, also used... Agent:
20110129973 - Nonvolatile memory device using semiconductor nanocrystals and method of forming same: A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material.... Agent: International Business Machines Corporation
20110129974 - Method for fabricating semiconductor device: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming a plurality of buried bit lines in the first trenches, forming a plurality of second trenches to expose at least one sidewall of the buried bit lines by etching the substrate,... Agent:
20110129975 - Method for fabricating side contact in semiconductor device using double trench process: A method for fabricating a semiconductor device is provided, the method includes forming a double trench including a first trench and a second trench formed below the first trench and having surfaces covered with insulation layers, and removing portions of the insulation layers to form a side contact exposing one... Agent:
20110129976 - Local interconnect having increased misalignment tolerance: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair... Agent: Spansion LLC
20110129977 - Plasma doping method and manufacturing method of semiconductor device: A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate.... Agent:
20110129978 - Method and structure for forming finfets with multiple doping regions on a same chip: A method for fabrication of features for an integrated circuit includes patterning a first semiconductor structure on a surface of a semiconductor device, and epitaxially growing semiconductor material on opposite sides of the first semiconductor structure to form fins. A first angled ion implantation is applied to one side of... Agent:
20110129980 - Cap removal in a high-k metal gate electrode structure by using a sacrificial fill material: Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill... Agent:
20110129979 - Method of manufacturing a semiconductor device having improved transistor performance: In one aspect provides a method of manufacturing a semiconductor device having improved transistor performance. In one aspect, this improvement is achieved by conducting a pre-deposition spacer deposition process wherein a temperature of a bottom region of a furnace is higher than a temperature of in the top region and... Agent: Texas Instruments Inc.
20110129982 - Method for forming a capacitor of a semiconductor memory device: A semiconductor device that is capable of preventing a storage node bunker defect or a defect due to loss of a barrier layer, and a method for forming a capacitor thereof. The semiconductor memory device includes a contact hole formed in an interlayer dielectric layer on a semiconductor substrate; a... Agent: Hynix Semiconductor Inc
20110129983 - Method for fabricating a dual-orientation group-iv semiconductor substrate: The present invention relates to method for fabricating a dual-orientation group-IV semiconductor substrate and comprises in addition to performing a masked amorphization on a DSB-like substrate only in first lateral regions of the surface layer, and a solid-phase epitaxial regrowth of the surface layer in only the first lateral regions... Agent: St Microelectronics Sas
20110129984 - Method of manufacturing semiconductor integrated circuit device: In the present invention, in the exposure to light of a memory cell array or the like of a semiconductor memory or the like, when a group of unit openings for etching the STI trench regions in which the unit openings for etching the STI trench regions each having a... Agent: Renesas Electronics Corporation
20110129985 - Methods for forming isolation structures for semiconductor devices: A shallow isolation trench structure and methods of forming the same wherein the method of formation comprises a layered structure of a buffer film layer over a dielectric layer that is atop a semiconductor substrate. The buffer film layer comprises a material that is oxidation resistant and can be etched... Agent: Micron Technology, Inc.
20110129986 - Nitrogen-plasma surface treatment in a direct bonding method: Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm.... Agent:
20110129988 - Method of making multiple implantations in a substrate: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which... Agent: S.o.i. Tec Silicon On Insulator Technologies
20110129987 - Semiconductor device and manufacturing method thereof: To provide a structure and a manufacturing method for efficiently forming a transistor to which tensile strain is preferably applied and a transistor to which compressive strain is preferably applied over the same substrate when stress is applied to a semiconductor layer in order to improve mobility of the transistors... Agent: Semiconductor Energy Laboratory Co., Ltd.
20110129989 - Semiconductor device manufacturing method and device for same: An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the... Agent: Fuji Electric Systems Co. Ltd.
20110129990 - Method for doping non-planar transistors: Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The... Agent: Applied Materials, Inc.
20110129991 - Methods of patterning materials, and methods of forming memory cells: Some embodiments include methods of patterning materials. A mass may be formed over a material, and a first mask may be formed over the mass. First spacers may be formed along features of the first mask, and then the first mask may be removed to leave a second mask corresponding... Agent:
20110129992 - Method for fabricating vertical channel type non-volatile memory device: A method for fabricating a vertical channel type non-volatile memory device includes repeatedly forming stacks of conductive layers and inter-layer insulation layers over a substrate, and performing an etch process using an etch gas which etches both the conductive layers and the inter-layer insulation layers to form a contact hole... Agent:
20110129993 - Semiconductor device and inspection method therefor: A method of fabricating a semiconductor device, including forming a circuit block in a peripheral edge portion of a semiconductor chip, forming a circuit block pad on the circuit block to provide an electrical interface for the circuit block, and forming a bonding pad laterally offset from the circuit block... Agent: Renesas Electronics Corporation
20110129994 - Method of manufacturing a dual face package: A method of manufacturing a dual face package, including: preparing an upper substrate composed of an insulating layer including a post via-hole; forming a filled electrode in a semiconductor substrate, the filled electrode being connected to a die pad; applying an adhesive layer on one side of the semiconductor substrate... Agent: Samsung Electro Mechanics Co., Ltd.
20110129995 - Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluation: A multilayer wiring structure of a semiconductor device having a stacked structure is arranged to restrain reliability degradation due to stress applied to the region of wiring between opposite upper and lower plugs. The rate of overlap of contact surface between upper plug and wiring on contact surface between lower... Agent: Panasonic Corporation
20110129996 - Through substrate annular via including plug filler: A through substrate via includes an annular conductor layer at a periphery of a through substrate aperture, and a plug layer surrounded by the annular conductor layer. A method for fabricating the through substrate via includes forming a blind aperture within a substrate and successively forming and subsequently planarizing within... Agent: International Business Machines Corporation
20110129997 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a... Agent: Sumitomo Electric Industries, Ltd.
20110129998 - Cleaning liquid for lithography and method for forming wiring: m
20110129999 - Method for manufacturing semiconductor device: Provided is a method for manufacturing a semiconductor device including: an electrode formation step of forming an electrode on one surface of a semiconductor substrate; a through hole formation step of forming a through hole starting from a position on the other surface corresponding to the position of the electrode;... Agent: Fujikura Ltd.
20110130000 - Methods of manufacturing a semiconductor device using compositions for etching copper: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of... Agent:
20110130001 - Substrate processing apparatus: A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction... Agent:
20110130003 - Method and apparatus for conformable polishing: Methods and apparatus provide for a conformable polishing head for uniformly polishing a workpiece. The polishing head includes an elastic polishing pad mounted on an elastic membrane that seals a cavity in the polishing head. The cavity is pressurized to expand the membrane and press the polishing pad down on... Agent:
20110130002 - Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing: Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as... Agent:
20110130004 - Method for forming side contact in semiconductor device through self-aligned damascene process: A method for fabricating a semiconductor device includes forming a plurality of active regions, each having a first sidewall and a second sidewall, by etching a semiconductor substrate, forming an insulation layer on the first sidewall and the second sidewall, forming an etch stop layer filling a portion of each... Agent:
20110130005 - Processing for overcoming extreme topography: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to... Agent: International Business Machines Corporation
20110130006 - Mask material conversion: The dimensions of mask patterns, such as pitch-multiplied spacers, are controlled by controlled growth of features in the patterns after they are formed. To form a pattern of pitch-multiplied spacers, a pattern of mandrels is first formed overlying a semiconductor substrate. Spacers are then formed on sidewalls of the mandrels... Agent: Micron Technology, Inc.
20110130007 - In-situ clean to reduce metal residues after etching titanium nitride: Methods of processing substrates having titanium nitride layers are provided. In some embodiments, a method for processing a substrate having a dielectric layer to be etched, a titanium nitride layer above the dielectric layer, and a patterned photoresist layer above the titanium nitride layer, includes etching a pattern into the... Agent: Applied Materials, Inc.
20110130008 - Method to control critical dimension: A method to control a critical dimension is disclosed. First, a material layer and a composite patterned layer covering the material layer are provided. The composite patterned layer has a pattern defining a first critical dimension. Later, an etching gas is used to perform an etching step to etch the... Agent:
20110130010 - Etching and cleaning methods and etching and cleaning apparatuses used therefor: A method of manufacturing a semiconductor device includes preparing a semiconductor wafer having a device area, an end face, and a surface peripheral area located outside the device area and between the end face and the device area. Forming a Cu layer on the semiconductor wafer and rotating the wafer... Agent: Renesas Electronics Corporation
20110130009 - Method and apparatus for surface treatment using a mixture of acid and oxidizing gas: Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by combining gaseous ozone and heated sulfuric acid such that a gas/liquid dispersion or foam of ozone in sulfuric acid is applied in a layer to the wafer surface to be treated.... Agent: Lam Research Ag
20110130011 - Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus: Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process... Agent: Hitachi-kokusai Electric Inc.
20110130012 - Rapid thermal processing by stamping: A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding... Agent: Alliance For Sustainable Energy, LLC.
20110130013 - Substrate processing method and semiconductor device manufacturing method: The substrate processing method is one that carries out processing of a substrate by dividing the substrate depthwise, and comprises a proton injection step S11 in which protons are injected from one principal surface side of the substrate and an irradiation step S12 in which the substrate is irradiated with... Agent: Japan Atomic Energy AgencyPrevious industry: Chemistry: analytical and immunological testing
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